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TRANSCRIPT
ANSTO Accelerator Capabilities for Materials Characterisation
Mihail Ionescu, Rainer Siegele, David [email protected]
IAEA Vienna15-19 Sept 2008
Outline:
• ANSTO’s Ion Beam Accelerators
• Examples from ANSTO’s research projects on the use of accelerators for characterization of materials
ANSTO’s Ion Beam Accelerators
ANTARES (Australian National Tandem for Applied Research). • Opened in September 1991.• 10 MV heavy ion machine (HVEE) with 3 ion sources and 5 high energy beamlines (2 IBA and 3 AMS).
• Can accelerate most ions in the periodic table (H- U)
STAR (Small Tandem for Applied Research). • Opened in January 2005.• 2 MV heavy ion machine (HVEE) with 3 ion sources and 3 high energy beamlines (2 IBA and 1 AMS 14C).
• Can accelerate (H, He, C)
Ion Beam Accelerators Usage
• To provide accelerator based expertise for: - internally and externally driven research with
Australian Universities, CSIRO, Local and State Governments, industry and international organisations including the International Atomic Energy Agency (IAEA)
- training for local and international researchers, workshops, fellowships etc for developing countries in our region• Main techniques include:
- Ion Beam Analysis (IBA): PIXE, PIGE, RBS, ERDA, RToF, NRA and Heavy ion µ-probe (X-ray mapping; lithography; IBIC)
- Accelerator Mass Spectrometry (AMS) – 14C, 10Be, 26Al, 129I, Actinides
ANTARES
ANTARES10 MV Tandem
HVEE 846multi sample
860single
NECalphatross
Microprobe
IBA-ToF
AMS: C, Be, Al
AMS:Actinides
10m• Microprobe: µ-PIXE; µ-RBS• ToF: Heavy ion ERDA; RBS; ion implantation• AMS: 14C, 10Be, 26Al, 129I, Actinides
5m
STAR
• SIBA1: Automated PIXE; PIGE; RBS; PESA• SIBA2: He-ERDA; Variable angle RBS; NRA• AMS (14C) dating
358Ion Source
846BIon Source
2MV HVEETandetron Accelerator
AMS 14C
IBABeam line 1
IBABeam line 2
Ionisationchamber
Recombinator
IBA Materials Projects at ANSTO• Elemental analysis (PIXE, PIGE)• Characterization of thin films near-surface layers and interfaces:
- thickness (RBS, NRA, variable angle RBS) - depth profile of elements (RBS, NRA, ERDA)- defects (variable angle RBS-channelling)- 2D mapping (µ-PIXE; µ-RBS)
• Modification of thin films, near-surface layers and interfaces:- ion implantation (conductive polymers; ZnO/STO; other)
• Device testing (IBIC, single event upset)Can do:
• Materials testing for radiation damage• Micro-machining• Ion beam induced chemical reactions
PIXE, PIGE: Aerosols in AsiaPIXE, PIGE: Aerosols in Asia
Cheju Is.
Sado Is.D
ust
S
Hong KongHanoi
Manila
• Large throughput of samples• PMF→Source identification• Events correlation (back trajectories)• Large database
Lead vs Bromine Mascot 1992-2000
0200400600800
10001200
0 100 200 300 400 500Br (ng/m3)
Pb (n
g/m3 )
Pb=(2.12±0.30)*Br +(27±29)R2=0.98
Mascot 1992-2000
01002003004005006007008009001000
D ec - 90
D ec - 91
D ec - 92
D ec - 93
D ec - 94
D ec - 95
D ec - 96
D ec - 97
D ec - 98
D ec - 99
D ec - 00
Lead
(ng/m
3 )
PIXE, PIGE: Study of Archaeological Artefacts [1]
• Non destructive• Large throughput • PMF→Source identification• Ancient trade routs identified
[1] T. Doelman, R. Torrence, V. Popov, M. Ionescu, N. Kluyev, I. Sleptsov, I. Pantyukhina, P. White and M. Clements, Geoarchaeology 23, 234, (2008)
PIXE Bremsstrahlung [1]
[1] D. D. Cohen, E. Stelcer, R. Siegele, M. Ionescu, M. Prior, NIM B 266, 1149-1153, (2008) [2] K. Murozono, K. Ishii, H. Yamazaki, S. Matsuyama, S. Iwasaki, NIM B 150, 76, (1999)
• Important for quantitative analysis• Theoretical background calculated for 3MeV protons on C[2]
Be 1843 µg/cm2
C 1767 µg/cm2
• Data corrected for self absorption; detector efficiency; γ-ray background component and normalised to unit charge
(µC), unit solid angle (Sr) and unit target thickness (µg/cm2)• Normalised yield (Yld) was fitted to a 9-th order polynomial ln(Yld)=a0+a1ln Ex+a2 (ln Ex)2+…+a9(lnEx)9
Heavy Ion MicroprobeHeavy Ion Microprobe• Spot sizes of 1-10µm• 1-10 nA target current• Focussing of ions with Me/q2 = 100 (H to U)• 2D mapping• Applications: 2D mapping (µ-PIXE, µ-RBS) Nuclear reactions Resonances Heavy Ion Elastic Recoil Detection IBIC Ion Beam Lithography
Au50 x 50 µm Cr
1-2 µm spot size at 100 pA; 3MeV H
Elemental Mapping using the Ion MicroprobeElemental Mapping using the Ion Microprobe
PIXE Spectrum of Aerosol Filter
Exposed Filter
Unexposed Filter
soil
cars
sea spray FeS ores
50µm
KCa Ni
Characterization of Characterization of MicrodosimetersMicrodosimeters by IBIC by IBIC [1][1]
Charge collection maps of 20 MeV C4+ beams onSilicon on Insulator (SOI) micro-dosimeters
K
[1] I. M. Cornelius, R. Siegele, I. Orlic, A. B. Rosenfeld, D. D. Cohen, NIM B 210, 191, (2003)
Single Ion irradiation [1]
• Damage in tracks depend on LET• Diameter of a damage track is
~10nm • Used in single ion implant and high
resolution IB lithography
Low Medium HighPMMASi
Ion E (MeV)
LET elect
(eV/nm)LET nucl (eV/nm)
H 2 15 <0.1 MARCHe 2 150 0.1 MARCC 30 44 0.3 ANSTOC 9 760 0.8 ANSTOF 8 1380 2.8 ANSTOCu 6 1460 77 ANSTO
AFM
100nm
F damagetracks
[1] A. Alves, P. Reichart, R. Siegele, P. N. Johnston, D. N. Jamieson, NIM B 249, 730, (2006)
Ni Uptake in Plants [1]
Ca
100 µm
Leaf cross-section scan : - current 0.8 nA- spot size 3 µm - count rate 2 kHz
• Study of Hybantus Floribundus- a Ni hyperaccumulator• Thin sections (~10 µm) freeze substitution• Localization of Ni in various parts of the plant
Ni
100 µm
50 µm
K[1] R. Siegele, A. G. Kachenko, N. P. Bhatia, Y. D. Wang, M. Ionescu, B. Singh, A. J. M. Baker, D. D. Cohen, X-ray Spectrometry 37, 133, (2008)
RBS: multi-layer MgB2/Mg2Si/Al2O3 [1]
50 100 150 200 250 300
0.0
5.0x103
1.0x104
1.5x104
2.0x104
75o
8x 15
nm M
g 2Si
9x 80
nm M
gB2
Yield
[cts/2µC
]
Channel No
experimental simulated B O Mg Al Si
2MeV He1+
15o
C-Al 2
O 3
• Role of Mg2Si layers in increasing the pinning• comparison with single MgB2 film• Increase in activation energy U0• Increase in anisotropy of U0
[1] Y. Zhao, M. Ionescu, P. Munroe, S. X. Dou, APL 88, 012502, (2006)
RBS: channelling in Si
200 400 600 800 1000 1200 1400
0
1000
2000
3000
4000
5000
RBS y
ield [
cts/20
0µC]
Energy [keV]
(101)
(111)
C
Surface
Surface
(101)1MeV He+
Detector
1MeV He+
Detector
(111)
• Study of Al-Ti-C MAX phase [1]• Part of C diffused in Si (001) substrate• A buried layer of C by channelling of 2MeV He+ in Si• Substrate replaced by MgO
[1] J. Rosen, P. O. A. Persson, M. Ionescu, A. Kondyurin, D. R. McKenzie, M. M. M. Bilek, APL 92, 064102, (2008)
50 100 150 200 250 300 350
0
100
200
300
400
500
600
700
C
Mg
Nd
Exp Simul C O Mg Al Ti Nd
Yield
[cts/1
.2µC
Channel No
Ti
Al
O in
MgO
HeERDA-SBD: Hydrogen in SiNx thin film [1]
recoiled (H)
)( 22 EEEE foild ∆−=dxdExEE x
x1
12cosβ−=
−=dxdExEkE x
x0
01 cosα)( 11 EEEE foild ∆−=
E0x
At depth x:2
21
221
01 )(cos4MM
MMEE+
= θ
θσ
cos4)]([
22
20
221
221
MEMMeZZ
dd +=Ω
ΩΩ
=
ddN
ctsYcmatNi
σ
αcos][]/[ 2
Ed
E2
E0E1x
M1 (He)M2 (H)
αβ
θ E1
x
scattered (He)
recoiled (He)
At the surface:
Filter
Energy Detector
N- number of ions incident on sample surfaceΩ - detector solid angleσ - scattering cross section
0 200 400 600 800 1000
0
10
20
30
40
50
60
H Yie
ld [co
unts]
Energy [keV]
Si Wafer thin SiN thick SiN
He
H
S iSiN x
:H
S urfa
ce H
• Passivating role of Hydrogen in thin SiNx films
• Depth of analysis: up to few 100nm• Depth resolution: few nm• Sensitivity: ~0.1 at%
0 200 400 600 800 100005
10152025
Depth [x1015 at/cm2]
Si
05
10152025
Hydro
gen [
x1015
H/cm
2 ]
SiN20
05
10152025
SiN70
[1] M. Ionescu, B. Richards, K. McIntosh, R. Siegele, E. Stelcer, O Hawas, D. D. Cohen, T. Chandra, Materials Science Forum Vols. 539-543, pp. 3551-3556, (2007)
ANSTO Heavy Ion ERDA-ToF [1]
T2
Secondary Electron
MCP
W electrodes C foilsRecoils
0.5m
ElectrostaticMirrors
SBD
45o
4-way slitsIon Beam
67.5o
Secondaryelectron
Anode plateEnergyTime
T1
0 25 50 75 100 125 150 175 200 225 250 275 300 325
17
18
19
20
21
22
23
24
Depth
reso
lution
[nm]
C foil thickness [µg/cm2]
82.5 MeV Iodine
• Ion beams: C; O; F; Na; Si; Cl; Ca; Ti; Co; Ni; Cu; Br; Nb; Ag, I; W; Pt; Au
• Beam shape: rectangular• Incident angle: 67.5o• Exit angle: 45o• Scattering angle: 45o• C foils: 25µg/cm2• Sample manipulation: XYZ, rotation• Sample heating up to 1,000oC• Gas ports (O, N)• Further development:
- H absorption/desorption- In-line sample preparation: ion implanter + EB evaporatorTRIG (86)
QD (821)
CH3
CH1
CH0(94)
STOP START
(T)
(93)
(E)
QD (821)
Sample
CFD
Delay
CFD
PAFPAFPA
e-e-
T2
TOF-ERDA DiagramIon Beam
Recoils T1SBD
PC
(571)AMP
(474)TFA
(463)CFD
(89)NIM-TTL(567)
TAC
(419)MCA
[1] J. W. Martin, D. D. Cohen, N. Dytlewski, D. B. Garton, H. J. Whitlow,G. J. Russell, NIM B 94, 277, (1994)
ERDA-ToF: analysis of MgB2 thin film with 82MeV I [1]
0 400 800 1200 1600 2000 2400 2800 3200 3600 40000
400
800
1200
1600
2000
2400
2800
3200
3600
4000
Time [
chan
nel n
o]
Energy [channel no]
10B11B O
Mg
Al
82MeV I
A l 2O 3
M gB 2 112.5o
0 50 100 150 200 250
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000 Substrate 10B 11B O Mg Al
Yield
[coun
ts]
Depth [nm]
Film
16 18 20 22 24 26 28 30 32 34 36 38
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
3786
542
On axis-Si On axis-Al2O3 Off axis; Mg cap layer Off axis; ion beam sputtered
Norm
alize
d Oxy
gen i
n MgB2 fi
lm
Tc [K]
1
• Isotope effect in MgB2 can be measured as a function of 10B/11B
• Magnesium is diffusing into the substrate• Oxygen amount critical for the quality of the film• Tc correlated with the amount of Oxygen, type of substrate, and deposition geometry[1] M. Ionescu, Y. Zhao, R. Siegele, D. D. Cohen, E. Stelcer, M. Prior, NIM B 266, 1701–1704, (2008)
NRA: Oxygen in Ta2(16O1-x+18Ox)5 thin film [1]
25 50 75 100 125 150 175 200
0
100
200
300
400
500
600
700
800
900
1000
α yie
ld [co
unts]
Channel Number
0.2 0.6 1 1.6 1.8 2.1 2.5 4
18O concentrations [at%]
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.0
2.0x1034.0x1036.0x1038.0x1031.0x1041.2x1041.4x1041.6x1041.8x1042.0x1042.2x104 Standard samples
Liniar Fit
α yi
eld [c
ounts
]18O concentration [at%]
y=4577 x+148R=0.99964
α
Ta2(16O1-x
18Ox)5
p 845keV
18O(p,α)15N
200nm
Ta
500 600 700 800 900 10000
10
20
30
40
50
60
70
dσ/dΩ
[mb/s
r]
Energy [keV]
18O(p,α)15N
845 keV
641 keV
[1] M. Ionescu, D. Bradshaw, R. Siegele, D. D. Cohen, O. Hawas, E. Stelcer, D. Button, D. Garton, NTA 14 Conference, 20-22 November 2005, Wellington, New Zealand
NRA: Hydrogen in thick DLC film
Γ=
σπ iNdxdEctsY
cmatN][2
]/[ 2
σΩ=
iNctsYcmatN ][]/[ 2E4
E3
E2x
γ
dxdExEE x0
00cosα−=
1H(15N,αγ)12C
dxdExEE x
x1
12 cosβ−=
E0x
At depth x:
E2
E0≥ 6.385 MeVE1x
15N
α
β
θ
E1
x
At the surface:
Energy Detectors
Ni - number of ions incident on sampleΩ − detector solid angleσ − 15N reaction cross section Γ − FWHM of resonance (1.8keV)
4He
1H12C
γ E1= 4.43 MeV
• Depth of analysis: few nm up to few microns
• Depth resolution: 5-20nm• Sensitivity: 1-100ppm
5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.51
10
100
1000
10000
Siγ Y
ield [
coun
ts/2.5
µC]
Energy 15N+ ions [MeV]
15N+
γ Detector
Si
DLC film ~700nm
• Thick DLC film grown by CVD for implants• Hydrogen content plays a role in the biologic
response [1]• Hydrogen content is higher at the surface and
decreases toward the interface• Questions remains on Hydrogen yield due to
the production of 15N- (15NH3-), the flux measurement, energy spread, etc
[1] W. J. Ma, A. J. Ruys, R. S. Mason, P. J. Martin, A. Bendavid,Z. Liu, M. Ionescu, H. Zreiqat, Biomaterials 28, 1620–1628, (2007)
Ion beam implantation and mixing
nanostructures
depth
Ion implantation
burriedlayersupersaturation
nucleationgrowth
ripeningcoalescence
timeannealing
surface
nanostructures
interface
Ion irradiation timeannealing
surface
interface mixing phase separation
• Near surface layers and interfaces can be engineered for specific properties
10K
Zn0.99Co0.01O
Zn0.99Co0.005Eu0.005OZn0.99Eu0.01O
0
0 103 2x103-103-2x103
B [Oe]
Magn
etiza
tion [
amu]
2x10-4
10-4
-10-4
-2x10-4
• ZnO thin film implanted with Eu and Co• Annealed• Magnetization measured at 300K and
10K
Conclusions• IBA nuclear techniques at ANSTO suitable for characterisation of thin films, near surface layers and interfaces
- film thickness- depth profile of light and heavy elements- defects in single crystals- 2D X-ray mapping of surfaces- radiation damage in materials- ion beam-induced chemical reactions- micro-machining
• Modification of properties by ion implant • Micro device testing (IBIC, single event upset)
Acknowledgment:D. Garton, G. Cooke; O. Evans; M. Mann; D. Lynch; E. Stelcer; P. Bond; P. Druer