precision switched integrator transimpedance amplifier datasheet · 2020. 12. 31. · 6 ® ivc102...

15
I IN V B 1 2 3 4 5 6 11 12 13 Digital Ground Analog Ground Logic Low closes switches 9 10 14 V O V+ V– S 1 S 2 Ionization Chamber Photodiode 60pF 30pF 10pF S 1 C 1 C 2 C 3 S 2 InternationalAirportIndustrialPark MailingAddress:POBox11400 • Tucson,AZ85734 • StreetAddress:6730S.TucsonBlvd. • Tucson,AZ 85706 Tel:(520)746-1111 • Twx:910-952-1111 • Cable:BBRCORP • Telex:066-6491 • FAX:(520)889-1510 • ImmediateProductInfo:(800)548-6132 ® PRECISION SWITCHED INTEGRATOR TRANSIMPEDANCE AMPLIFIER APPLICATIONS PRECISION LOW CURRENT MEASUREMENT PHOTODIODE MEASUREMENTS IONIZATION CHAMBER MEASUREMENTS CURRENT/CHARGE-OUTPUT SENSORS LEAKAGE CURRENT MEASUREMENT IVC102 FEATURES ON-CHIP INTEGRATING CAPACITORS GAIN PROGRAMMED BY TIMING LOW INPUT BIAS CURRENT: 750fA max LOW NOISE LOW SWITCH CHARGE INJECTION FAST PULSE INTEGRATION LOW NONLINEARITY: 0.005% typ 14-PIN DIP, SO-14 SURFACE MOUNT DESCRIPTION The IVC102 is a precision integrating amplifier with FET op amp, integrating capacitors, and low leakage FET switches. It integrates low-level input current for a user-determined period, storing the resulting voltage on the integrating capacitor. The output voltage can be held for accurate measurement. The IVC102 provides a precision, lower noise alternative to conventional transimpedance op amp circuits that require a very high value feedback resistor. The IVC102 is ideal for amplifying low-level sensor currents from photodiodes and ionization chambers. The input signal current can be positive or negative. TTL/CMOS-compatible timing inputs control the inte- gration period, hold and reset functions to set the effective transimpedance gain and to reset (discharge) the integrator capacitor. Package options include 14-Pin plastic DIP and SO-14 surface-mount packages. Both are specified for the –40°C to 85°C industrial temperature range. © 1996 Burr-Brown Corporation PDS-1329A Printed in U.S.A. June, 1996 0V Hold Integrate Hold Reset Positive or Negative Signal Integration S 1 S 2 I IN (t) V O = –1 dt C INT SBFS009

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  • IVC102

    IIN

    VB

    1

    2

    3

    4

    5

    6

    11 12 13

    DigitalGround

    AnalogGround

    Logic Low closes switches

    9

    10

    14

    VO

    V+

    V–

    S1 S2

    IonizationChamber

    Photodiode

    60pF

    30pF

    10pF

    S1

    C1

    C2

    C3

    S2

    International Airport Industrial Park • Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706Tel: (520) 746-1111 • Twx: 910-952-1111 • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132

    ®

    PRECISION SWITCHED INTEGRATORTRANSIMPEDANCE AMPLIFIER

    APPLICATIONS● PRECISION LOW CURRENT MEASUREMENT

    ● PHOTODIODE MEASUREMENTS

    ● IONIZATION CHAMBER MEASUREMENTS● CURRENT/CHARGE-OUTPUT SENSORS

    ● LEAKAGE CURRENT MEASUREMENT

    IVC102

    FEATURES● ON-CHIP INTEGRATING CAPACITORS

    ● GAIN PROGRAMMED BY TIMING● LOW INPUT BIAS CURRENT: 750fA max

    ● LOW NOISE

    ● LOW SWITCH CHARGE INJECTION

    ● FAST PULSE INTEGRATION

    ● LOW NONLINEARITY: 0.005% typ

    ● 14-PIN DIP, SO-14 SURFACE MOUNT

    DESCRIPTIONThe IVC102 is a precision integrating amplifier withFET op amp, integrating capacitors, and low leakageFET switches. It integrates low-level input current fora user-determined period, storing the resulting voltageon the integrating capacitor. The output voltage can beheld for accurate measurement. The IVC102 providesa precision, lower noise alternative to conventionaltransimpedance op amp circuits that require a veryhigh value feedback resistor.

    The IVC102 is ideal for amplifying low-level sensorcurrents from photodiodes and ionization chambers.The input signal current can be positive or negative.

    TTL/CMOS-compatible timing inputs control the inte-gration period, hold and reset functions to set theeffective transimpedance gain and to reset (discharge)the integrator capacitor.

    Package options include 14-Pin plastic DIP and SO-14surface-mount packages. Both are specified for the–40°C to 85°C industrial temperature range.

    © 1996 Burr-Brown Corporation PDS-1329A Printed in U.S.A. June, 1996

    0V

    Hold Integrate Hold Reset

    Positive or NegativeSignal Integration

    S1

    S2

    IIN(t)VO =–1 ∫ dtCINT

    SBFS009

  • IVC102

    The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumesno responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to changewithout notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrantany BURR-BROWN product for use in life support devices and/or systems.

    NOTES: (1) Standard test timing: 1ms integration, 200µs hold, 100µs reset. (2) Hold mode output voltage after 1ms integration of zero input current. Includes opamp offset voltage, integration of input error current and switch charge injection effects.

    SPECIFICATIONSAt TA = +25°C, VS = ±15V, RL = 2kΩ, CINT = C1 + C2 + C3, 1ms integration period(1), unless otherwise specified.

    IVC102P, U

    PARAMETER CONDITIONS MIN TYP MAX UNITS

    TRANSFER FUNCTION VO = –(IIN)(TINT)/CINTGain Error CINT = C1 + C2 + C3 ±5 +25/–17 %

    vs Temperature ±25 ppm/°CNonlinearity VO = ±10V ±0.005 %Input Current Range ±100 µAOffset Voltage(2) IIN = 0, CIN = 50pF –5 ±20 mV

    vs Temperature ±30 µV/°Cvs Power Supply VS = +4.75/–10 to +18/–18V 150 750 µV/V

    Droop Rate, Hold Mode –1 nV/µs

    OP AMPInput Bias Current S1, S2 Open –100 ±750 fA

    vs Temperature See Typical CurveOffset Voltage (Op Amp VOS) ±0.5 ±5 mV

    vs Temperature ±5 µV/°Cvs Power Supply VS = +4.75/–10 to +18/–18V 10 100 µV/V

    Noise Voltage f = 1kHz 10 nV/√Hz

    INTEGRATION CAPACITORSC1 + C2 + C3 80 100 120 pF

    vs Temperature ±25 ppm/°CC1 10 pFC2 30 pFC3 60 pF

    OUTPUTVoltage Range, Positive RL = 2kΩ (V+)–3 (V+)–1.3 V

    Negative RL = 2kΩ (V–)+3 (V–)+2.6 VShort-Circuit Current ±20 mACapacitive Load Drive 500 pFNoise Voltage See Typical Curve

    DYNAMIC CHARACTERISTICOp Amp Gain-Bandwidth 2 MHzOp Amp Slew Rate 3 V/µsReset

    Slew Rate 3 V/µsSettling Time, 0.01% 10V Step 6 µs

    DIGITAL INPUTS (TTL/CMOS Compatible)VIH (referred to digital ground) (Logic High) 2 5.5 VVIL (referred to digital ground) (Logic Low) –0.5 0.8 VIIH VIH = 5V 2 µAIIL VIL = 0V 0 µASwitching Time 100 ns

    POWER SUPPLYVoltage Range: Positive +4.75 +15 +18 V

    Negative –10 –15 –18 VCurrent: Positive 4.1 5.5 mA

    Negative –1.6 –2.2 mAAnalog Ground –0.2 mADigital Ground –2.3 mA

    TEMPERATURE RANGEOperating Range –40 85 °CStorage –55 125 °CThermal Resistance, θJA

    DIP 100 °C/WSO-14 150 °C/W

  • IVC102

    ELECTROSTATICDISCHARGE SENSITIVITY

    This integrated circuit can be damaged by ESD. Burr-Brownrecommends that all integrated circuits be handled withappropriate precautions. Failure to observe proper handlingand installation procedures can cause damage.

    ESD damage can range from subtle performance degrada-tion to complete device failure. Precision integrated circuitsmay be more susceptible to damage because very smallparametric changes could cause the device not to meet itspublished specifications.

    ABSOLUTE MAXIMUM RATINGSSupply Voltage, V+ to V– .................................................................... 36VLogic Input Voltage ...................................................................... V– to V+Output Short Circuit to Ground ............................................... ContinuousOperating Temperature ................................................. –40°C to +125°CStorage Temperature ..................................................... –55°C to +125°CLead Temperature (soldering, 10s) ................................................. 300°C

    PIN CONNECTIONS

    Top View 14-Pin DIP/SO-14 Surface Mount

    PACKAGE INFORMATION

    PACKAGE DRAWINGPRODUCT PACKAGE NUMBER (1)

    IVC102P 14-Pin DIP 010IVC102U SO-14 Surface Mount 235

    NOTE: (1) For detailed drawing and dimension table, please see end of datasheet, or Appendix D of Burr-Brown IC Data Book.

    V+

    Digital Ground

    S2

    S1

    VO

    V–

    NC

    Analog Ground

    IIN

    –In

    C1

    C2

    C3

    NC

    NC = No Internal Connection Connect to Analog Ground for Lowest Noise

    14

    13

    12

    11

    10

    9

    8

    1

    2

    3

    4

    5

    6

    7

  • IVC102

    10 100 1000

    CIN (pF)

    TOTAL OUTPUT NOISE vs CIN1000

    100

    10

    1

    Noi

    se V

    olta

    ge (

    µVrm

    s)

    rms Variationof 100 MeasurementCycles, TINT = 1ms.

    CINT = 10pF

    CINT = 30pF

    CINT = 100pF

    CINT = 300pF

    CINT = 1000pF

    Reset Mode, S1 Open, S2 Closed.

    TYPICAL PERFORMANCE CURVESAt TA = +25°C, VS = ±15V, RL = 2kΩ, CINT = C1 + C2 + C3, 1ms integration period, unless otherwise specified.

    –50 –25 0 25 50 75 100 125

    Temperature (°C)

    INPUT BIAS CURRENT vs TEMPERATURE100p

    10p

    1p

    100f

    10f

    Inpu

    t Bia

    s C

    urre

    nt (

    A)

    S1, S2 Open

    0 100 200 300 400 500 600 700 800 900 1000

    CINT (pF)

    RESET TIME vs CINT30

    25

    20

    15

    10

    5

    0

    Res

    et T

    ime

    (µs)

    Time Required toReset from ±10Vto 0V.

    0.01%

    1%

    10 100 1000

    Input Capacitance, CIN (pF)

    S1 CHARGE INJECTION vs INPUT CAPACITANCE2.0

    1.8

    1.6

    1.4

    1.2

    1.0

    0.8

    0.6

    0.4

    0.2

    0

    Cha

    rge

    Inje

    ctio

    n, ∆

    Q (

    pC)

    100pF

    ∆VO =∆Q

    100pF

    S1

    CIN

    10 100 1000

    Input Capacitance, CIN (pF)

    S2 CHARGE INJECTION vs INPUT CAPACITANCE1.0

    0.9

    0.8

    0.7

    0.6

    0.5

    0.4

    0.3

    0.2

    0.1

    0

    Cha

    rge

    Inje

    ctio

    n, ∆

    Q (

    pC)

    (V+) = +18V

    (V+) = +15V

    (V+) = +4.75V

    100pF

    ∆VO =∆Q

    100pF

    CIN

    S2

  • IVC102

    Charge Injectionof S2

    Op Amp VOS+

    IIN • RS2

    0V

    Integrate

    (S2 Open)

    T1

    0V

    S2

    VO

    T2

    10µsReset

    10µsReset

    IIN

    Photodiode

    60pF

    30pF

    10pF

    0.1µF

    0.1µF

    1

    2

    3

    4

    5

    6

    11 12 13

    10 VO

    14

    V++15V

    LogicHigh(+5V)

    S1

    C1

    C2

    C3

    S2DigitalGround

    AnalogGround

    S2

    9

    –15VV–

    DigitalData

    SamplingA/D

    Converter

    See timingsignal below

    APPLICATION INFORMATIONFigure 1 shows the basic circuit connections to operate theIVC102. Bypass capacitors are shown connected to thepower supply pins. Noisy power supplies should be avoidedor decoupled and carefully bypassed.

    The Analog Ground terminal, pin 1, is shown internallyconnected to the non-inverting input of the op amp. Thisterminal connects to other internal circuitry and should beconnected to ground. Approximately 200µA flows out ofthis terminal.

    Digital Ground, pin 13, should be at the same voltagepotential as analog ground (within 100mV). Analog andDigital grounds should be connected at some point in thesystem, usually at the power supply connections to thecircuit board. A separate Digital Ground is provided so thatnoisy logic signals can be referenced to separate circuitboard traces.

    Integrator capacitors C1, C2 and C3 are shown connected inparallel for a total CINT = 100pF. The IVC102 can be usedfor a wide variety of integrating current measurements. Theinput signal connections and control timing and CINT valuewill depend on the sensor or signal type and other applica-tion details.

    BASIC RESET-AND-INTEGRATE MEASUREMENT

    Figure 1 shows the circuit and timing for a simple reset-and-integrate measurement. The input current is connected di-rectly to the inverting input of the IVC102, pin 3. Inputcurrent is shown flowing out of pin 3, which produces apositive-going ramp at VO. Current flowing into pin 3 wouldproduce a negative-going ramp.

    A measurement cycle starts by resetting the integrator outputvoltage to 0V by closing S2 for 10µs. Integration of the inputcurrent begins when S2 opens and the input current begins tocharge CINT. VO is measured with a sampling a/d converterat the end of an integration period, just prior to the next resetperiod. The ideal result is proportional to the average inputcurrent (or total accumulated charge).

    Switch S2 is again closed to reset the integrator output to 0Vbefore the next integration period.

    This simple measurement arrangement is suited to manyapplications. There are, however, limitations to this basicapproach. Input current continues to flow through S2 duringthe reset period. This leaves a small voltage on CINT equalto the input current times RS2, the on-resistance of S2,approximately 1.5kΩ.

    FIGURE 1. Reset-and Integrate Connections and Timing.

    Figure 1b

    Figure 1a

  • IVC102

    CINT

    for constant IIN, at the end of TINT

    VO = –IINTINTCINT

    VO

    IIN

    IIN(t)VO =–1 ∫ dtCINT

    In addition, the offset voltage of the internal op amp andcharge injection of S2 contribute to the voltage on CINT at thestart of integration.

    Performance of this basic approach can be improved bysampling VO after the reset period at T1 and subtracting this

    measurement from the final sample at T2. Op amp offsetvoltage, charge injection effects and I•RS2 offset voltage onS2 are removed with this two-point measurement. The effec-tive integration period is the time between the two measure-ments, T2-T1.

    COMPARISON TO CONVENTIONAL TRANSIMPEDANCE AMPLIFIERS

    With the conventional transimpedance amplifier circuitof Figure 2a, input current flows through the feedbackresistor, RF, to create a proportional output voltage.

    VO = –IIN RFThe transimpedance gain is determined by RF. Very largevalues of RF are required to measure very small signalcurrent. Feedback resistor values exceeding 100MΩ arecommon.

    The IVC102 (Figure 2b) provides a similar function,converting an input current to an output voltage. Theinput current flows through the feedback capacitor, CINT,charging it at a rate that is proportional to the inputcurrent. With a constant input current, the IVC102’soutput voltage is

    VO = –IIN TINT/ CINT

    after an integration time of TINT.

    VO is proportional to the integration time, TINT, andinversely proportional to the feedback capacitor, CINT.The effective transimpedance gain is TINT /CINT. Ex-tremely high gain that would be impractical to achievewith a conventional transimpedance amplifier can beachieved with small integration capacitor values and/orlong integration times. For example the IVC102 withCINT = 100pF and TINT = 100ms provides an effectivetransimpedance of 1GΩ. A 10nA input current wouldproduce a 10V output after 100ms integration.

    The integrating behavior of the IVC102 reduces noise byaveraging the input noise of the sensor, amplifier, andexternal sources.

    Conventional Transimpedance AmplifierFigure 2a

    Integrating Transimpedance AmplifierFigure 2b

    RF

    VO = –IIN RF

    VO

    IIN

    CURRENT-OUTPUT SENSORS

    Figure 3 shows a model for many current-output sensorssuch as photodiodes and ionization chambers. Sensor outputis a signal-dependent current with a very high source resis-tance. The output is generally loaded into a low impedance

    FIGURE 2. Comparison to a Conventional Transimpedance Amplifier.

    so that the terminal voltage is kept very low. Typical sensorcapacitance values range from 10pF to over 100pF. Thiscapacitance plays a key role in operation of the switched-input measurement technique (see next section).

    Provides time-continuous outputvoltage proportional to IIN.

    Output voltage after integration period isproportional to average IIN throughoutthe period.

  • IVC102

    60pF

    30pF

    10pF

    0.1µF

    0.1µF

    1

    I

    PhotodiodeSensor

    R C

    2

    3

    4

    5

    6

    11

    I: Signal - Dependent CurrentR: Sensor ResistanceC: Sensor Capacitance

    12 13

    10 VO

    14

    V++15V

    S1

    S1

    C1

    C2

    C3

    S2

    S2

    9

    –15VV–

    DigitalData

    A/DConverter

    See timingsignals below

    3a

    3b

    3c

    Charge transferredfrom sensor Cto CINT.

    A

    A

    B

    B

    Transfer FunctionOffset Voltage

    Ramp due toinput bias current

    (exaggerated).

    EffectiveSignal Integration

    Period, TS

    VO waveform withapprox. half-scale input current.

    VO waveform withzero input current.

    ∆QS1 Opening

    0V

    0V

    0V

    VO

    S2

    S1

    VO

    0V

    +10mV

    –10mV

    10µsHold

    10µsReset

    10µsHold

    10µsReset

    10µsPre-Int.

    Hold

    ∆QS2 Opening

    ∆QS1 Closing

    Op AmpVOS

    (S1 Open) (S1 Closed)

    (S2 Open)

    FIGURE 3. Switched-Input Measurement Technique.

    Input connections and timing are shown in Figure 3.

    The timing diagram, Figure 3b, shows that S1 is closed onlywhen S2 is open. During the short period that S1 is open(30µs in this timing example), any signal current producedby the sensor will charge the sensor’s source capacitance.This charge is then transferred to CINT when S1 is closed. Asa result, no charge produced by the sensor is lost and theinput signal is continuously integrated. Even fast inputpulses are accurately integrated.

    SWITCHED-INPUT MEASUREMENT TECHNIQUE

    While the basic reset-and-integrate measurement arrange-ment in Figure 1 is satisfactory for many applications, theswitched-input timing technique shown in Figure 3 hasimportant advantages. This method can provide continuousintegration of the input signal. Furthermore, it can hold theoutput voltage constant after integration for stable conver-sion (desirable for a/d converter without a sample/hold).

  • IVC102

    The input current, IIN, is shown as a conventional currentflowing into pin 2 in this diagram but the input current couldbe bipolar (positive or negative). Current flowing out of pin2 would produce a positive-ramping VO.

    The timing sequence proceeds as follows:

    Reset PeriodThe integrator is reset by closing switch S2 with S1 open. A10µs reset time is recommended to allow the op amp to slewto 0V and settle to its final value.

    Pre-Integration HoldS2 is opened, holding VO constant for 10µs prior to integra-tion. This pre-integration hold period assures that S2 is fullyopen before S1 is closed so that no input signal is lost. Aminimum of 1µs is recommended to avoid switching over-lap. The 10µs hold period shown in Figure 3b also allows ana/d converter measurement to be made at point A. Thepurpose of this measurement at A is discussed in the “OffsetErrors” section.

    Integration on C INTIntegration of the input current on CINT begins when S1 isclosed. An immediate step output voltage change occurs asthe charge that was stored on the input sensor capacitance istransferred to CINT. Although this period of charging CINToccurs only while S1 is closed, the charge transferred as S1is closed causes the effective integration time to be equal tothe complete conversion period—see Figure 3b.

    The integration period could range from 100µs to manyminutes, depending on the input current and CINT value.While S1 is closed, IIN charges CINT, producing a negative-going ramp at the integrator output voltage, VO. The outputvoltage at the end of integration is proportional to theaverage input current throughout the complete conversioncycle, including the integration period, reset and both holdperiods.

    Hold PeriodOpening S1 halts integration on CINT. Approximately 5µsafter S1 is opened, the output voltage is stable and can bemeasured (at point B). The hold period is 10µs in thisexample. CINT remains charged until a S2 is again closed, toreset for the next conversion cycle.

    In this timing example, S1 is open for a total of 30µs. Duringthis time, signal current from the sensor charges the sensorsource capacitance. Care should be used to assure that thevoltage developed on the sensor does not exceed approxi-mately 200mV during this time. The IIN terminal, pin 2, isinternally clamped with diodes. If these diodes forward bias,signal current will flow to ground and will not be accuratelyintegrated.

    A maximum of 333nA signal current could be accuratelyintegrated on a 50pF sensor capacitance for 30µs before200mV would be developed on the sensor.

    IMAX = (50pF) (200mV) / 30µs = 333nA

    OFFSET ERRORS

    Figure 3c shows the effect on VO due to op amp input offsetvoltage, input bias current and switch charge injection. Itassumes zero input current from the sensor. The variousoffsets and charge injection (∆Q) jumps shown are typical ofthat seen with a 50pF source capacitance. The specified“transfer function offset voltage” is the voltage measuredduring the hold period at B. Transfer function offset voltageis dominated by the charge injection of S2 opening and opamp VOS. The opening and closing charge injections of S1are very nearly equal and opposite and are not significantcontributors.

    Note that using a two-point difference measurement at Aand B can dramatically reduce offset due to op amp VOS andS2 charge injection. The remaining offset with this B-Ameasurement is due to op amp input bias current chargingCINT. This error is usually very small and is exaggerated inthe figure.

    DIGITAL SWITCH INPUTS

    The digital control inputs to S1 and S2 are compatible withstandard CMOS or TTL logic. Logic input pins 11 and 12are high impedance and the threshold is approximately 1.4Vrelative to Digital Ground, pin 13. A logic “low” closes theswitch.

    Use care in routing these logic signals to their respectiveinput pins. Capacitive coupling of logic transitions to sensi-tive input nodes (pins 2 through 6) and to the positive powersupply (pin 14) will dramatically increase charge injectionand produce errors. Route these circuit board traces over aground plane (digital ground) and route digital ground tracesbetween logic traces and other critical traces for lowestcharge injection. See Figure 4.

    5V logic levels are generally satisfactory. Lower voltagelogic levels may help reduce charge injection errors, de-pending on circuit layout. Logic high voltages greater than5.5V, or higher than the V+ supply are not recommended.

    FIGURE 4. Circuit Board Layout Techniques.

    ••

    Input trace guardedall the way to sensor.

    Switch logic inputsguarded by digitalground.

    AnalogGround

    DigitalGround

    Pins 7 and 8 have no internal connection but are connected toground for lowest noise pickup.

    V+

    Input nodesguarded byanalog ground.

    V–

    VO

    S1

    S2

    14

    87

    1

  • IVC102

    CHOOSING CINTInternal capacitors C1, C2 and C3 are high quality metal/oxide types with low leakage and excellent dielectric char-acteristics. Temperature stability is excellent—see typicalcurve. They can be connected for CINT = 10pF, 30pF, 40pF,60pF, 70pF, 90pF or 100pF. Connect unused internal ca-pacitor pins to analog ground. Accuracy is ±20%, whichdirectly influences the gain of the transfer function.

    A larger value external CINT can be connected between pins3 and 10 for slower/longer integration. Select a capacitortype with low leakage and good temperature stability.Teflon, polystyrene or polypropylene capacitors generallyprovide excellent leakage, temperature drift and voltagecoefficient characteristics. Lower cost types such as NPOceramic, mica or glass may be adequate for many applica-tions. Larger values for CINT require a longer reset time—seetypical curves.

    FREQUENCY RESPONSE

    Integration of the input signal for a fixed period produces adeep null (zero response) at the frequency 1/TINT and itsharmonics. An ac input current at this frequency (or itsharmonics) has zero average value and therefore producesno output. This property can be used to position responsenulls at critical frequencies. For example, a 16.67ms integra-tion period produces response nulls at 60Hz, 120Hz, 180Hz,etc., which will reject ac line frequency noise and its har-monics. Response nulls can be positioned to reduce interfer-ence from system clocks or other periodic noise.Response to all frequencies above f = 1/TINT falls at –20dB/decade. The effective corner frequency of this single-poleresponse is approximately 1/2.8TINT.

    For the simple reset-and-integrate measurement technique,TINT is equal to the to the time that S2 is open. The switched-input technique, however, effectively integrates the inputsignal throughout the full measurement cycle, including thereset period and both hold periods. Using the timing shownin Figure 3, the effective integration time is 1/Ts, where Tsis the repetition rate of the sampling.

    INPUT IMPEDANCE

    The input impedance of a perfect transimpedance circuit iszero ohms. The input voltage ideally would be zero for anyinput current. The actual input voltage when directly drivingthe integrator input (pin 3) is proportional to the output slewrate of the integrator. A 1V/µs slew rate produces approxi-mately 100mV at pin 3. The input of the integrator can bemodeled as a resistance:

    RIN = 10–7/CINT

    with RIN in Ω and CINT in Farads.

    Using the internal CINT = C1 + C2 + C3 = 100pF

    RIN = 10–7/100pF = 1kΩ

    (2)

    (3)

    INPUT BIAS CURRENT ERRORS

    Careful circuit board layout and assembly techniques arerequired to achieve the very low input bias current capabilityof the IVC102. The critical input connections are at groundpotential, so analog ground should be used as a circuit boardguard trace surrounding all critical nodes. These includepins 2, 3, 4, 5 and 6. See Figure 4.

    Input bias current increases with temperature—see typicalperformance curve Input Bias Current vs Temperature.

    HOLD MODE DROOP

    Hold-mode droop is a slow change in output voltage prima-rily due to op amp input bias current. Droop is specifiedusing the internal CINT = 100pF and is based on a –100fAtypical input bias current. Current flows out of the invertinginput of the internal op amp.

    With CINT = 100pF, the droop rate is typically only1nV/µs—slow enough that it rarely contributes significanterror at moderate temperatures.

    Since the input bias current increases with temperature, thedroop rate will also increase with temperature. The drooprate will approximately double for each 10°C increase injunction temperature—see typical curves.

    Droop rate is inversely proportional to CINT. If an externalintegrator capacitor is used, a low leakage capacitor shouldbe selected to preserve the low droop performance of theIVC102.

    INPUT CURRENT RANGE

    Extremely low input currents can be measured by integrat-ing for long periods and/or using a small value for CINT.Input bias current of the internal op amp is the primarysource of error.

    Larger input currents can be measured by increasing thevalue of CINT and/or using a shorter integration time. Inputcurrents greater than 200µA should not be applied to the pin2 input, however. The approximately 1.5kΩ series resistanceof S1 will create an input voltage at pin 2 that will begin toforward-bias internal protection clamp diodes. Any currentthat flows through these protection diodes will not be accu-rately integrated. See “Input Impedance” section for moreinformation on input current-induced voltage.

    Input current greater than 200µA can, however, be con-nected directly to pin 3, using the simple reset-integratetechnique shown in Figure 1. Current applied at this inputcan be externally switched to avoid excessive I•R voltageacross S2 during reset. Inputs up to 5mA at pin 3 can beaccurately integrated if CINT is made large enough to limitslew rate to less than 1V/µs. A 5mA input current wouldrequire CINT = 5nF to produce a 1V/µs slew rate. The inputcurrent appears as load current to the internal op amp,reducing its ability to drive an external load.

    Droop Rate = –100fACINT

    Teflon E. I. Du Pont de Nemours & Co.

  • 10®

    IVC102

    The input resistance seen at pin 2 includes an additional1.5kΩ, the on-resistance of S1. The total input resistance isthe sum of the switch resistance and RIN, or 2.5kΩ in thisexample.

    Slew rate limit of the internal op amp is approximately3V/µs. For most applications, the slew rate of VOUT shouldbe limited to 1V/µs or less. The rate of change is propor-tional to IIN and inversely proportional to CINT:

    This can be important in some applications since the slew-induced input voltage is applied to the sensor or signalsource. The slew-induced input voltage can be reduced byincreasing CINT, which reduces the output slew rate.

    NONLINEARITY

    Careful nonlinearity measurements of the IVC102 yieldtypical results of approximately ±0.005% using the internalinput capacitors (CINT = 100pF). Nonlinearity will be de-graded by using an external integrator capacitor with poorvoltage coefficient. Performance with the internal capacitorsis typically equal or better than the sensors it is used tomeasure. Actual application circuits with sensors such as aphotodiode may have other sources of nonlinearity.

    1/10TINT 1/TINT 10/TINT

    ● ●●

    –20dB/decadeslope

    Frequency

    0

    –10

    –20

    –30

    –40

    –50

    Fre

    quen

    cy R

    espo

    nse

    (dB

    )

    Corner atf = 0.32/TINT

    –3dB atf = 0.44/TINT

    FIGURE 5. Frequency Response of Integrating Converter.

    Slew Rate = IINCINT

  • PACKAGE OPTION ADDENDUM

    www.ti.com 10-Dec-2020

    Addendum-Page 1

    PACKAGING INFORMATION

    Orderable Device Status(1)

    Package Type PackageDrawing

    Pins PackageQty

    Eco Plan(2)

    Lead finish/Ball material

    (6)

    MSL Peak Temp(3)

    Op Temp (°C) Device Marking(4/5)

    Samples

    IVC102U ACTIVE SOIC D 14 50 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 125 IVC102U

    IVC102U/2K5 ACTIVE SOIC D 14 2500 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 125 IVC102U

    (1) The marketing status values are defined as follows:ACTIVE: Product device recommended for new designs.LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.

    (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substancedo not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI mayreference these types of products as "Pb-Free".RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of

  • PACKAGE OPTION ADDENDUM

    www.ti.com 10-Dec-2020

    Addendum-Page 2

  • TAPE AND REEL INFORMATION

    *All dimensions are nominal

    Device PackageType

    PackageDrawing

    Pins SPQ ReelDiameter

    (mm)

    ReelWidth

    W1 (mm)

    A0(mm)

    B0(mm)

    K0(mm)

    P1(mm)

    W(mm)

    Pin1Quadrant

    IVC102U/2K5 SOIC D 14 2500 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1

    PACKAGE MATERIALS INFORMATION

    www.ti.com 30-Dec-2020

    Pack Materials-Page 1

  • *All dimensions are nominal

    Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

    IVC102U/2K5 SOIC D 14 2500 853.0 449.0 35.0

    PACKAGE MATERIALS INFORMATION

    www.ti.com 30-Dec-2020

    Pack Materials-Page 2

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