power mosfet - mantech number: 91015 s-81377-rev. a, 30-jun-08 1 power mosfet irf510, sihf510 vishay...

Document Number: 91015 www.vishay.comS-81377-Rev. A, 30-Jun-08 1

Power MOSFET

IRF510, SiHF510Vishay Siliconix

FEATURES• Dynamic dV/dt Rating

• Repetitive Avalanche Rated• 175 °C Operating Temperature

• Fast Switching

• Ease of Paralleling• Simple Drive Requirements

• Lead (Pb)-free Available

DESCRIPTIONThird generation Power MOSFETs from Vishay provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance andcost-effectiveness. The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 W. The low thermal resistanceand low package cost of the TO-220 contribute to its wideacceptance throughout the industry.

Notesa. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b. VDD = 25 V, starting TJ = 25 °C, L = 4.8 mH, RG = 25 Ω, IAS = 5.6 A (see fig. 12).c. ISD ≤ 5.6 A, dI/dt ≤ 75 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.d. 1.6 mm from case.

PRODUCT SUMMARYVDS (V) 100

RDS(on) (Ω) VGS = 10 V 0.54

Qg (Max.) (nC) 8.3

Qgs (nC) 2.3

Qgd (nC) 3.8

Configuration Single

N-Channel MOSFET

G

D

S

TO-220

GD

S

Available

RoHS*COMPLIANT

ORDERING INFORMATIONPackage TO-220

Lead (Pb)-freeIRF510PbFSiHF510-E3

SnPbIRF510SiHF510

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise notedPARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage VDS 100V

Gate-Source Voltage VGS ± 20

Continuous Drain Current VGS at 10 VTC = 25 °C

ID5.6

ATC = 100 °C 4.0

Pulsed Drain Currenta IDM 20

Linear Derating Factor 0.29 W/°C

Single Pulse Avalanche Energyb EAS 100 mJ

Repetitive Avalanche Currenta IAR 5.6 A

Repetitive Avalanche Energya EAR 4.3 mJ

Maximum Power Dissipation TC = 25 °C PD 43 W

Peak Diode Recovery dV/dtc dV/dt 5.5 V/ns

Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C

Soldering Recommendations (Peak Temperature) for 10 s 300d

Mounting Torque 6-32 or M3 screw10 lbf · in

1.1 N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply

www.vishay.com Document Number: 910152 S-81377-Rev. A, 30-Jun-08


Notesa. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

THERMAL RESISTANCE RATINGSPARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient RthJA - 62

°C/WCase-to-Sink, Flat, Greased Surface RthCS 0.50 -

Maximum Junction-to-Case (Drain) RthJC - 3.5

SPECIFICATIONS TJ = 25 °C, unless otherwise notedPARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 100 - - V

VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.12 - V/°C

Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V

Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA

Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V - - 25

µA VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250

Drain-Source On-State Resistance RDS(on) VGS = 10 V ID =3.4 Ab - - 0.54 Ω

Forward Transconductance gfs VDS = 50 V, ID = 3.4 Ab 1.3 - - S

Dynamic

Input Capacitance Ciss VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5

- 180 -

pFOutput Capacitance Coss - 81 -

Reverse Transfer Capacitance Crss - 15 -

Total Gate Charge Qg

VGS = 10 V

ID = 5.6 A, VDS = 80 V

VDS = 10 V,

see fig. 6 and 13b

- - 8.3

nC Gate-Source Charge Qgs - - 2.3

Gate-Drain Charge Qgd - - 3.8

Turn-On Delay Time td(on)

VDD = 50 V, ID = 5.6 A RG = 24 Ω, RD = 8.4 Ω, see fig. 10b

- 6.9 -

nsRise Time tr - 16 -

Turn-Off Delay Time td(off) - 15 -

Fall Time tf - 9.4 -

Internal Drain Inductance LD Between lead,6 mm (0.25") from package and center of die contact

- 4.5 -

nH

Internal Source Inductance LS - 7.5 -

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current ISMOSFET symbolshowing the integral reversep - n junction diode

- - 5.6

APulsed Diode Forward Currenta ISM - - 20

Body Diode Voltage VSD TJ = 25 °C, IS = 5.6 A, VGS = 0 Vb - - 2.5 V

Body Diode Reverse Recovery Time trrTJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/µsb

- 100 200 ns

Body Diode Reverse Recovery Charge Qrr - 0.44 0.88 µC

Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

D

S

G

S

D

G



TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, TC = 175 °C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

91015_01

20 µs Pulse WidthTC = 25 °C

4.5 V

VDS, Drain-to-Source Voltage (V)

I D, D

rain

Cur

rent

(A

)

101

Bottom

TopVGS

15 V10 V8.0 V7.0 V6.0 V5.5 V5.0 V4.5 V

100

10-1 100 101

101

100

10-1 100 101


I D, D

rain

Cur

rent

(A

)

4.5 VBottom

TopVGS

15 V10 V8.0 V7.0 V6.0 V5.5 V5.0 V4.5 V

20 µs Pulse WidthTC = 175 °C

91015_02

20 µs Pulse WidthVDS = 50 V

101

100

10-1

I D, D

rain

Cur

rent

(A

)

VGS, Gate-to-Source Voltage (V)

5 6 7 8 9 104

25 °C

175 °C

91015_03

ID = 5.6 AVGS = 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

- 60 - 40 - 20 0 20 40 60 80 100 120 140160

TJ, Junction Temperature (°C)

RD

S(o

n), D

rain

-to-

Sou

rce

On

Res

ista

nce

(Nor

mal

ized

)

91015_04

180



Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

400

320

240

160

0

80

100 101

VGS = 0 V, f = 1 MHzCiss = Cgs + Cgd, Cds ShortedCrss = CgdCoss = Cds + Cgd

Ciss

Crss

Coss

Cap

acita

nce

(pF

)

VDS, Drain-to-Source Voltage (V)91015_05

20

16

12

8

0

4

0 2 864

ID = 5.6 A

VDS = 20 V

For test circuitsee figure 13

10

VDS = 50 V

VDS = 80 V

QG, Total Gate Charge (nC)

VG

S, G

ate-

to-S

ourc

e V

olta

ge (

V)

91015_06

91015_07

25 °C

175 °C

VGS = 0 V

10-1

100

VSD, Source-to-Drain Voltage (V)

I SD, R

ever

se D

rain

Cur

rent

(A

)

0.5 0.90.80.70.6 1.0 1.21.1

100 µs

1 ms

10 ms

Operation in this area limitedby RDS(on)


I D, D

rain

Cur

rent

(A

)

TC = 25 °CTJ = 175 °CSingle Pulse

0.1

102

2

5

1

2

5

10

2

5

2 51 10

2 5 102 2 5103

91015_08



Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10a - Switching Time Test Circuit

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

I D, D

rain

Cur

rent

(A

)

TC, Case Temperature (°C)

1.0

2.0

3.0

4.0

5.0

6.0

25 1501251007550

91015_09

0.0175

Pulse width ≤ 1 µsDuty factor ≤ 0.1 %

RD

VGS

RG

D.U.T.

10 V

+-

VDS

VDD

VDS

90 %

10 %VGS

td(on) tr td(off) tf

10

1

0.1

10-2

10-5 10-4 10-3 10-2 0.1 1 10

PDM

t1t2

t1, Rectangular Pulse Duration (s)

The

rmal

Res

pons

e (Z

thJC

)

Notes:1. Duty Factor, D = t1/t22. Peak Tj = PDM x ZthJC + TC

Single Pulse(Thermal Response)

0 - 0.5

0.2

0.1

0.050.020.01

91015_11

A

RG

IAS

0.01 Ωtp

D.U.T

LVDS

+

-VDD

10 V

Vary tp to obtainrequired IAS

IAS

VDS

VDD

VDS

tp



Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

300

0

50

100

150

200

250

25 1501251007550

Starting TJ, Junction Temperature (°C)

EA

S, S

ingl

e P

ulse

Ene

rgy

(mJ)

Bottom

TopID

2.3 A4.0 A5.6 A

VDD = 25 V

91015_12c

175

QGS QGD

QG

VG

Charge

10 V

D.U.T.

3 mA

VGS

VDS

IG ID

0.3 µF0.2 µF

50 kΩ

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

+

-



Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see http://www.vishay.com/ppg?91015.

P.W.Period

dI/dt

Diode recoverydV/dt

Ripple ≤ 5 %

Body diode forward dropRe-appliedvoltage

Reverserecoverycurrent

Body diode forwardcurrent

VGS = 10 V*

VDD

ISD

Driver gate drive

D.U.T. ISD waveform

D.U.T. VDS waveform

Inductor current

D = P.W.Period

+

-

+

+

+-

-

-

* VGS = 5 V for logic level devices

Peak Diode Recovery dV/dt Test Circuit

VDD

• dV/dt controlled by RG• Driver same type as D.U.T.• ISD controlled by duty factor "D"• D.U.T. - device under test

D.U.T. Circuit layout considerations • Low stray inductance

• Ground plane • Low leakage inductance

current transformer

RG

Document Number: 91000 www.vishay.comRevision: 18-Jul-08 1

Disclaimer

Legal Disclaimer NoticeVishay

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained hereinor in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of anyinformation provided herein to the maximum extent permitted by law. The product specifications do not expand orotherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressedtherein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by thisdocument or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unlessotherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in suchapplications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resultingfrom such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regardingproducts designed for such applications.

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power mosfet - mantech number: 91015 s-81377-rev. a, 30-jun-08 1 power mosfet irf510, sihf510 vishay...

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