power mosfet · irfr9120, irfu9120, sihfr9120, sihfu9120 vishay siliconix s13-0167-rev. c,...
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![Page 1: Power MOSFET · IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 Vishay Siliconix S13-0167-Rev. C, 04-Feb-13 1 Document Number: 91280 For technical questions, contact: hvm@vishay.com THIS](https://reader033.vdocuments.us/reader033/viewer/2022051510/5ff08f77ce3aa94ee24d0cbb/html5/thumbnails/1.jpg)
IRFR9120, IRFU9120, SiHFR9120, SiHFU9120www.vishay.com Vishay Siliconix
S13-0167-Rev. C, 04-Feb-13 1 Document Number: 91280
For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFETFEATURES• Dynamic dV/dt Rating• Repetitive Avalanche Rated• Surface Mount (IRFR9120, SiHFR9120)• Straight Lead (IRFU9120, SiHFU9120)• Available in Tape and Reel• P-Channel• Fast Switching• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTIONThird generation power MOSFETs from Vishay provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance andcost-effictiveness.The DPAK is designed for surface mounting using vaporphase, infrared, or wave soldering techniques. The straightlead version (IRFU, SiHFU series) is for through-holemounting applications. Power dissipation levels up to 1.5 Ware possible in typical surface mount applications.
Notea. See device orientation.
Notesa. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b. VDD = - 25 V, starting TJ = 25 °C, L = 10 mH, Rg = 25 , IAS = - 5.6 A (see fig. 12).c. ISD - 6.8 A, dI/dt 110 A/μs, VDD VDS, TJ 150 °C.d. 1.6 mm from case.e. When mounted on 1" square PCB (FR-4 or G-10 material).
PRODUCT SUMMARYVDS (V) - 100
RDS(on) () VGS = - 10 V 0.60
Qg (Max.) (nC) 18
Qgs (nC) 3.0
Qgd (nC) 9.0
Configuration Single
S
G
D
P-Channel MOSFET
DPAK(TO-252)
IPAK(TO-251)
G D SS
D
G
D
ORDERING INFORMATIONPackage DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)
Lead (Pb)-free and Halogen-free SiHFR9120-GE3 SiHFR9120TR-GE3a SiHFR9120TRL-GE3a SiHFU9120-GE3
Lead (Pb)-freeIRFR9120PbF IRFR9120TRPbFa IRFR9120TRLPbFa IRFU9120PbF
SiHFR9120-E3 SiHFR9120T-E3a SiHFR9120TL-E3a SiHFU9120-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS - 100V
Gate-Source Voltage VGS ± 20
Continuous Drain Current VGS at - 10 VTC = 25 °C
ID- 5.6
ATC = 100 °C - 3.6
Pulsed Drain Currenta IDM - 22
Linear Derating Factor 0.33W/°C
Linear Derating Factor (PCB Mount)e 0.020
Single Pulse Avalanche Energyb EAS 210 mJ
Repetitive Avalanche Currenta IAR - 5.6 A
Repetitive Avalanche Energya EAR 4.2 mJ
Maximum Power Dissipation TC = 25 °C PD
42W
Maximum Power Dissipation (PCB Mount)e TA = 25 °C 2.5
Peak Diode Recovery dV/dtc dV/dt - 5.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C
Soldering Recommendations (Peak Temperature)d for 10 s 260
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IRFR9120, IRFU9120, SiHFR9120, SiHFU9120www.vishay.com Vishay Siliconix
S13-0167-Rev. C, 04-Feb-13 2 Document Number: 91280
For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notea. When mounted on 1" square PCB (FR-4 or G-10 material).
Notesa. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b. Pulse width 300 μs; duty cycle 2 %.
THERMAL RESISTANCE RATINGSPARAMETER SYMBOL MIN. TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - - 110
°C/WMaximum Junction-to-Ambient (PCB Mount)a RthJA - - 50
Maximum Junction-to-Case (Drain) RthJC - - 3.0
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 μA - 100 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.098 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V
Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS VDS = - 100 V, VGS = 0 V - - - 100
μA VDS = - 80 V, VGS = 0 V, TJ = 125 °C - - - 500
Drain-Source On-State Resistance RDS(on) VGS = - 10 V ID = - 3.4 Ab - - 0.60
Forward Transconductance gfs VDS = - 50 V, ID = - 3.4 A 1.5 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V, VDS = - 25 V,
f = 1.0 MHz, see fig. 5
- 390 -
pFOutput Capacitance Coss - 170 -
Reverse Transfer Capacitance Crss - 45 -
Total Gate Charge Qg
VGS = - 10 V ID = - 6.8 A, VDS = - 80 V, see fig. 6 and 13b
- - 18
nC Gate-Source Charge Qgs - - 3.0
Gate-Drain Charge Qgd - - 9.0
Turn-On Delay Time td(on)
VDD = - 50 V, ID = - 6.8 A, Rg = 18 , RD = 7.1 , see fig. 10b
- 9.6 -
nsRise Time tr - 29 -
Turn-Off Delay Time td(off) - 21 -
Fall Time tf - 25 -
Internal Drain Inductance LD Between lead,6 mm (0.25") from package and center of die contact
- 4.5 -nH
Internal Source Inductance LS - 7.5 -
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISMOSFET symbolshowing the integral reversep - n junction diode
- - - 5.6A
Pulsed Diode Forward Currenta ISM - - - 22
Body Diode Voltage VSD TJ = 25 °C, IS = - 5.6 A, VGS = 0 Vb - - - 6.3 V
Body Diode Reverse Recovery Time trrTJ = 25 °C, IF = - 6.8 A, dI/dt = 100 A/μsb
- 100 200 ns
Body Diode Reverse Recovery Charge Qrr - 0.33 0.66 μC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
S
G
S
D
G
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IRFR9120, IRFU9120, SiHFR9120, SiHFU9120www.vishay.com Vishay Siliconix
S13-0167-Rev. C, 04-Feb-13 3 Document Number: 91280
For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
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IRFR9120, IRFU9120, SiHFR9120, SiHFU9120www.vishay.com Vishay Siliconix
S13-0167-Rev. C, 04-Feb-13 4 Document Number: 91280
For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
![Page 5: Power MOSFET · IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 Vishay Siliconix S13-0167-Rev. C, 04-Feb-13 1 Document Number: 91280 For technical questions, contact: hvm@vishay.com THIS](https://reader033.vdocuments.us/reader033/viewer/2022051510/5ff08f77ce3aa94ee24d0cbb/html5/thumbnails/5.jpg)
IRFR9120, IRFU9120, SiHFR9120, SiHFU9120www.vishay.com Vishay Siliconix
S13-0167-Rev. C, 04-Feb-13 5 Document Number: 91280
For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Pulse width ≤ 1 µsDuty factor ≤ 0.1 %
RD
VGS
Rg
D.U.T.
- 10 V
+-
VDS
VDD
VGS
10 %
90 %VDS
td(on) tr td(off) tf
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IRFR9120, IRFU9120, SiHFR9120, SiHFU9120www.vishay.com Vishay Siliconix
S13-0167-Rev. C, 04-Feb-13 6 Document Number: 91280
For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
Rg
IAS
0.01 Ωtp
D.U.T
LVDS
+- VDD
- 10 V
Vary tp to obtainrequired IAS
IAS
VDS
VDD
VDS
tp
QGS QGD
QG
VG
Charge
- 10 V
D.U.T.
- 3 mA
VGS
VDS
IG ID
0.3 µF0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
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IRFR9120, IRFU9120, SiHFR9120, SiHFU9120www.vishay.com Vishay Siliconix
S13-0167-Rev. C, 04-Feb-13 7 Document Number: 91280
For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 14 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see www.vishay.com/ppg?91280.
P.W.Period
dI/dt
Diode recoverydV/dt
Body diode forward drop
Body diode forwardcurrent
Driver gate drive
Inductor current
D = P.W.Period
+
-
-
- - +
+
+
Peak Diode Recovery dV/dt Test Circuit
• dV/dt controlled by Rg
• D.U.T. - device under test
D.U.T.
Circuit layout considerations• Low stray inductance• Ground plane• Low leakage inductance
current transformer
Rg
• Compliment N-Channel of D.U.T. for driver
VDD• ISD controlled by duty factor “D”
Note
Notea. VGS = - 5 V for logic level and - 3 V drive devices
VGS = - 10 Va
D.U.T. lSD waveform
D.U.T. VDS waveform
VDD
Re-appliedvoltage
Ripple ≤ 5 %ISD
Reverserecoverycurrent
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Package Informationwww.vishay.com Vishay Siliconix
Revision: 03-Jun-13 1 Document Number: 71197
For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-252AA Case Outline
Notes• Dimension L3 is for reference only.• Xi’an, Mingxin, and GEM SH actual photo.
L3D
L4
L5
b b2
e1
E1
D1
C
A1
gage
pla
ne h
eigh
t (0
.5 m
m)
e
b3
EC2
A
LH
MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX.
A 2.18 2.38 0.086 0.094
A1 - 0.127 - 0.005
b 0.64 0.88 0.025 0.035
b2 0.76 1.14 0.030 0.045
b3 4.95 5.46 0.195 0.215
C 0.46 0.61 0.018 0.024
C2 0.46 0.89 0.018 0.035
D 5.97 6.22 0.235 0.245
D1 4.10 - 0.161 -
E 6.35 6.73 0.250 0.265
E1 4.32 - 0.170 -
H 9.40 10.41 0.370 0.410
e 2.28 BSC 0.090 BSC
e1 4.56 BSC 0.180 BSC
L 1.40 1.78 0.055 0.070
L3 0.89 1.27 0.035 0.050
L4 - 1.02 - 0.040
L5 1.01 1.52 0.040 0.060
ECN: T13-0359-Rev. O, 03-Jun-13DWG: 5347
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Document Number: 91362 www.vishay.comRevision: 15-Sep-08 1
Package InformationVishay Siliconix
TO-251AA (HIGH VOLTAGE)
Notes1. Dimensioning and tolerancing per ASME Y14.5M-1994.2. Dimension are shown in inches and millimeters.3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at the
outermost extremes of the plastic body.4. Thermal pad contour optional with dimensions b4, L2, E1 and D1.5. Lead dimension uncontrolled in L3.6. Dimension b1, b3 and c1 apply to base metal only.7. Outline conforms to JEDEC outline TO-251AA.
Basemetal
Plating b1, b3
(b, b2)
c1(c)
Section B - B and C - C
D
A
c2
c
Lead tip
5
5
(Datum A)
Thermal PADE1
4D1
View A - A
A1A
A
CSeatingplane
C C
B B
θ1θ2
B
4
4
4
3
5
L1
L
L3
3 x b2
3 x b
3
b4
E
2 x e 0.010 C BM A0.25
0.010 BA0.25L2
A
CM
MILLIMETERS INCHES MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.
A 2.18 2.39 0.086 0.094 D1 5.21 - 0.205 -
A1 0.89 1.14 0.035 0.045 E 6.35 6.73 0.250 0.265
b 0.64 0.89 0.025 0.035 E1 4.32 - 0.170 -
b1 0.65 0.79 0.026 0.031 e 2.29 BSC 2.29 BSC
b2 0.76 1.14 0.030 0.045 L 8.89 9.65 0.350 0.380
b3 0.76 1.04 0.030 0.041 L1 1.91 2.29 0.075 0.090
b4 4.95 5.46 0.195 0.215 L2 0.89 1.27 0.035 0.050
c 0.46 0.61 0.018 0.024 L3 1.14 1.52 0.045 0.060
c1 0.41 0.56 0.016 0.022 θ1 0' 15' 0' 15'
c2 0.46 0.86 0.018 0.034 θ2 25' 35' 25' 35'
D 5.97 6.22 0.235 0.245
ECN: S-82111-Rev. A, 15-Sep-08DWG: 5968
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Application Note 826Vishay Siliconix
Document Number: 72594 www.vishay.comRevision: 21-Jan-08 3
AP
PL
ICA
TIO
N N
OT
E
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.42
0
(10.
668)
Recommended Minimum PadsDimensions in Inches/(mm)
0.224
(5.690)
0.180
(4.572)
0.055
(1.397)
0.24
3
(6.1
80)
0.08
7
(2.2
02)
0.09
0
(2.2
86)
Return to IndexReturn to Index
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Legal Disclaimer Noticewww.vishay.com Vishay
Revision: 02-Oct-12 1 Document Number: 91000
DisclaimerALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVERELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm thatall the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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