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Page 1: Piezoelectric and Acoustic Materials for Transducer ...download.e-bookshelf.de/download/0000/0024/00/L-G... · Piezoelectric and Acoustic Materials for Transducer Applications ABC

Piezoelectric and Acoustic Materials for TransducerApplications

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Ahmad Safari • E. Koray AkdoganEditors

Piezoelectric and AcousticMaterials for TransducerApplications

ABC

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EditorsAhmad SafariDepartment of Materials Scienceand EngineeringThe Glenn Howatt Electronic CeramicsLaboratoryRutgers UniversityPiscataway, NJ 08854

E. Koray AkdoganDepartment of Materials Scienceand EngineeringThe Glenn Howatt Electronic CeramicsLaboratoryRutgers UniversityPiscataway, NJ 08854

Consulting EditorD.R. Vij

ISBN: 978-0-387-76538-9 e-ISBN: 978-0-387-76540-2

Library of Congress Control Number: 2008927196

c© 2008 Springer Science+Business Media, LLCAll rights reserved. This work may not be translated or copied in whole or in part without the writtenpermission of the publisher (Springer Science+Business Media, LLC, 233 Spring Street, New York, NY10013, USA), except for brief excerpts in connection with reviews or scholarly analysis. Use in connectionwith any form of information storage and retrieval, electronic adaptation, computer software, or by similaror dissimilar methodology now known or hereafter developed is forbidden.The use in this publication of trade names, trademarks, service marks, and similar terms, even if they arenot identified as such, is not to be taken as an expression of opinion as to whether or not they are subjectto proprietary rights.

Printed on acid-free paper

springer.com

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Preface

The idea of creating a book of this genre came with the realization that there were nobooks in the open literature that combined the materials aspect of piezoelectric andacoustic materials together with the principles of transducer design and recent ad-vances in piezoelectric transducers, as well as their application. By combining topicssuch as Fundamentals of Piezoelectricity (Part I), Piezoelectric and Acoustic Mate-rials for Transducer Technology (Part II), Transducer Design Principles (Part III),and Piezoelectric Transducer Fabrication Methods (Part IV), our purpose was toprovide a comprehensive and self-consistent volume whereby the aforementionedlack of a reference book in the open literature can be remedied.

This book is comprised of four complementary sections. In Part I, a concisetreatment of piezoelectric phenomena in solids is presented. Chapter 1 by Akdoganand Safari establishes the solid-state thermodynamic foundation for ferroelectricityas all piezoelectrics used in today’s transducer technology are ferroelectric. It alsodelineates the origin of very important concepts such as spontaneous polariza-tion, hysteresis loops, and piezostrain coefficients, which are needed to describethe macroscopic behavior of piezoelectrics. The chapter by Kholkin, Pertsev, andGoltsev (Chap. 2) deals with the symmetry aspects of the piezoelectric effect invarious materials (single crystals, ceramics, and thin films). It defines the third-ranktensor of piezoelectric coefficients in reference to the fundamentals of crystallogra-phy, and then discusses the orientation dependence of the longitudinal piezoelectricresponse in ferroelectric single crystals. Also, a concise discussion on the effec-tive piezoelectric constants of polydomain crystals, ceramics, and thin films andtheir dependence on crystal symmetry is provided. The domain-wall contribu-tion to the piezoelectric properties of ferroelectric ceramics and thin films is alsogiven. Finally, the crystallographic principles of piezomagnetic, magnetoelectric,and multiferroic materials are presented. In Chap. 3, Trolier-McKinstry presentsa detailed description of the crystallochemical principles of ferroelectricity andpiezoelectricity in solids. The discussion covers perovskites, tolerance factors, do-mains and domain walls, the lead zirconate titanate (PZT) system, bismuth-layer

v

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vi Preface

structure, LiNbO3, tungsten bronze structure, and SbSI, which is the point of depar-ture in the development of piezoelectric composites. The emphasis is on the atomicarrangements leading to polarization and its consequences on material properties.

In Part II, three chapters are devoted to the most prominent piezoelectric andacoustic material systems currently either in use or in development for transducerapplications. Damjanovic (Chap. 4) gives a detailed account on lead-based fer-roelectrics/piezoelectrics, including PbTiO3, PZT, relaxor ferroelectrics, and sin-gle crystals. Therein, one could find an in-depth discussion of the morphotrophicphase boundary in the PZT system as well as the anisotropy in piezoelectric re-sponse in PbTiO3. Systems with compositional modifications are treated as well,where hard and soft ferroelectrics are introduced. Kosec et al. (Chap. 5) gives a fulloverview of the (K, Na)NbO3 system, which is the most important lead-free ferro-electric system whose compositional modifications have great promise for applica-tions in the future. The emphasis is on the processing of ceramics such as KNbO3,NaNbO3, (K, Na)NbO3, and the recently discovered KNN–LT–LS ternary system,thereby effectively establishing processing-property relations. Also, a wealth of ma-terial properties appertaining to the (K, Na)NbO3 and related systems are includedtherein. Chap. 6 by Takenaka is on bismuth-based ferroelectric ceramics, which isanother lead-free system of utmost importance. The major focus there is on theBi4Ti3O12 and its compositional modifications. Most importantly, Takenaka pro-vides a very thorough treatment of grain orientation (texturing) of such lead-freeceramics, and discusses its consequences on piezoelectric properties. Cheng et al.(Chap. 7) presents a very detailed overview of the advances in electromechanicallyactive polymers in the context of mechatronics and artificial muscle. After a concisereview of the appertaining phenomenology on electromechanical behavior in solids,he and his colleagues present systems such as PVDF, P(VDF–TrFE) copolymer,and terpolymers. A very comprehensive discussion on phase transitions, structure,and electromechanical response is provided along with sets of material properties.In Chap. 8, Yamashita et al. introduce the recent advances in acoustic lens materi-als and provide a systematic account on recent advances in silicon-based technolo-gies. Therein, the evolution of acoustic properties of silicon lenses are discussedfrom the processing vantage point, and the most prominent dopants for composite-making are identified. Part II ends with another chapter on acoustic lens materialsby Kondo, which summarizes the use of carbon fiber composites and how a widerange of acoustic impedances can be fashioned for transducer applications.

Part III is devoted to transducer design principles. First, Lethiecq et al. (Chap. 10)discuss the design principles governing medical ultrasound transducers. The per-formance metrics of such transducers are introduced, operation principles of sin-gle element and transducer arrays are elaborated on, and the underlying acousticprinciples are discussed. In Chap. 11, Tressler discusses the design principles oftransducers for sonar applications. Various in-air and under-water calibration tech-niques are first presented, followed by various projector designs (ring, benderbar, flexural disks, flextensional, tonpilz) are introduced and appertaining designmethodologies are elaborated on. Also included in that chapter are hydrophonedesign principles, including cylinder and sphere configurations. This section ends

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Preface vii

with Chap. 12, where Hladky-Hennion provides a comprehensive overview of finiteelement modeling (FEM) principles as applied to piezoelelectric transducers. First,the mathematical foundations are provided through constitutive equations, the vari-ational principle, and appertaining functionals. Then, the application of the FEMmethod is demonstrated. Analysis methods such as static, harmonic, modal, andtransient are given. The chapter concludes with examples on the analysis of cymbaltransducers and cymbal arrays, and 1–3 composite transducers.

Part IV is on transducer fabrication methods. Therefore, it is inherently tiedinto applications as well since fabrication methods tend to be application spe-cific. In Chap. 13, Schoenecker addresses the status of piezoelectric fiber compos-ite fabrication, and focuses on three topics: the preparation of sol–gel-derived PZTfiber/polymer composites, the soft-mold method with high achievement potentialfor preparing tailor-made composites and understanding the structure–property re-lationships, and the preparation of powder suspension-derived PZT fiber/polymercomposites as the technologically advanced and commercialized process. Therein,it is iterated that the use of piezoceramic fibers allows for the fabrication of high-quality fiber composites, surpassing performance metrics that cannot be achieved bythe conventional dice and fill technique. Beige and Steinhausen (Chap. 14) discussdifferent types of composition gradient systems for bending actuators. The com-bination of hard and soft piezoelectric ceramics and electrostrictive and electrocon-ductive materials are introduced. Processing strategies are summarized and a mathe-matical models for modeling of poling in such combined systems are presented. Theresults of theoretical analysis are compared with experimental data for lead-free sys-tems based on barium titanate. In Chap. 15, Smay et al. present the advances madein the use of robocasting solid freeform fabrication (SFF) technique based on the di-rect writing of highly concentrated colloidal gels. They show that robocasting offersfacile assembly of complex three-dimensional geometries and a broad pallet of ce-ramic, metallic, and polymeric materials from which devices can be developed. Ex-amples of PZT skeletons for direct use or to create epoxy-filled composites suitablefor hydrostatic piezoelectric sensors are given. PZT composites of (3–3, 3–2, 3–1)connectivity are demonstrated. It is shown that the figure of merit (dhgh) increasesby up to 60-fold compared with bulk PZT in such composites. In Chap. 16, Jantunenet al. present a comprehensive overview of the general properties and requirementsof piezoelectric micropositioners. Special attention is paid to stiffness related toother actuator properties, with general rules and examples. Also the control and sen-sor techniques required to avoid or minimize the nonlinearities of the piezoelectricdevice are discussed in detail. And it is shown that in micropositioning a profoundoverall know–how about material properties, actuator design, and control, sensorand driving techniques are required in addition to an in-depth knowledge of ap-plication requirements. Finally, some commercial applications utilizing piezoelec-tric micropositioners are given as examples. Dogan and Uzgur (Chap. 17) presenta broad review of the application of piezoelectric transducers. Piezoelectric actua-tors are compared with magnetically active and thermally active actuators, and thenpiezoelectric actuators and their design and fabrication, especially traditional piezo-electric transducers with newly designed flextensional transducers, are compared.

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viii Preface

Finally, application-related issues are discussed on Chap. 18 by Shashank et al.provides strategies for the selection of the piezoelectric transducers based on thefrequency and amplitude of the mechanical stress in the context of energy harvest-ing. The figure of merit for the material selection is shown to be directly proportionalto the product (d × g). The criterion for maximization of the product is discussedin depth, and results are reported on various devices utilizing piezoelectric bimorphtransducers. Or and Chan (Chap. 19) present recent advances in piezocomposite ul-trasonic transducers for high-frequency wire bonding of semiconductor packages.The principles of wire-bonding and appertaining challenges are summarized. Theuse of 1–3 piezocomposite rings in such applications is shown, and the electro-mechanical characteristics are presented. The chapter also includes a section on theevaluation of wire-bonding performance utilizing such transducers. Bassiri-Gharb(Chap. 20) presents the use of piezoelectrics in MEMS applications. In that chapter,the properties of AlN, ZnO, PZT, and PMN–PT films are reviewed, and the effectof substrate clamping is briefly discussed. Then fabrication and integration issuesare addressed. Various applications of piezoelectrics, including AFM probe tips,RF switches, micromirrors, micropumps, and microvalves are given. In Chap. 21,Shung et al. discuss high-frequency ultrasonic transducers and arrays. After a thor-ough overview of the state of the art, LiNbO3 single-crystal transducers, and PMN–PT single-crystal needle transducers for Doppler flow measurements are presented.A multitude of transducer designs are shown (annular arrays, linear arrays, and theirderivatives), and underlying processing issues are elaborated on. The last chapter ofthe section and the book is on micromachining of piezoelectric transducers by Pap-palardo et al. (Chap. 22). The basic principles, the fabrication processes, and somemodeling approaches of novel micromachined ultrasonic transducers (MUTs) aredescribed. It is shown that these transducers utilize the flextensional vibration of anarray of micro-membranes called cMUT (capacitive MUT). It is also shown thatgood echographic images of internal organs in the human body have been obtained,demonstrating the possibilities of this technology to be utilized in commercial 1Dand 2D probes for medical applications.

In conclusion, we thank all the contributing authors for their great zeal and in-dustry in composing their respective chapters. Were it not for their willingness toparticipate in this exciting project, none that was accomplished could have beenpossible. A project of this magnitude cannot see the light of day without a constantsource of encouragement and support. To that end, we express our gratefulness toour families, friends, and colleagues. Last but not the least, we thank Springer forgiving us great flexibility in regard to the size of this volume.

Piscataway, New Jersey A. SafariE.K. Akdogan

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Contents

Preface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v

Part I Fundamentals of Piezoelectricity

1 Thermodynamics of Ferroelectricity . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3E. Koray Akdogan and Ahmad Safari

2 Piezoelectricity and Crystal Symmetry . . . . . . . . . . . . . . . . . . . . . . . . . . 17A.L. Kholkin, N.A. Pertsev, and A.V. Goltsev

3 Crystal Chemistry of Piezoelectric Materials . . . . . . . . . . . . . . . . . . . . 39Susan Trolier-McKinstry

Part II Piezoelectric and Acoustic Materials for Transducer Technology

4 Lead-Based Piezoelectric Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59Dragan Damjanovic

5 KNN-Based Piezoelectric Ceramics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81Marija Kosec, Barbara Malic, Andreja Bencan, and Tadej Rojac

6 Bismuth-based Piezoelectric Ceramics . . . . . . . . . . . . . . . . . . . . . . . . . . 103Tadashi Takenaka

7 Electropolymers for Mechatronics and Artificial Muscles . . . . . . . . . . 131Zhongyang Cheng, Qiming Zhang, Ji Su, and Mario El Tahchi

8 Low-Attenuation Acoustic Silicone Lens for Medical UltrasonicArray Probes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161Y. Yamashita, Y. Hosono, and K. Itsumi

9 Carbon-Fiber Composite Materials for Medical Transducers . . . . . . . 179Toshio Kondo

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x Contents

Part III Transducer Design and Principles

10 Piezoelectric Transducer Design for Medical Diagnosis and NDE . . . 191Marc Lethiecq, Franck Levassort, Dominique Certon,and Louis Pascal Tran-Huu-Hue

11 Piezoelectric Transducer Designs for Sonar Applications . . . . . . . . . . 217James F. Tressler

12 Finite Element Analysis of Piezoelectric Transducers . . . . . . . . . . . . . . 241Anne-Christine Hladky-Hennion and Bertrand Dubus

Part IV Piezoelectric Transducer Fabrication Methods

13 Piezoelectric Fiber Composite Fabrication . . . . . . . . . . . . . . . . . . . . . . 261Andreas Schonecker

14 Composition Gradient Actuators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 289Ralf Steinhausen and Horst Beige

15 Robocasting of Three-Dimensional Piezoelectric Structures . . . . . . . . 305James E. Smay, Bruce Tuttle, and Joseph Cesarano III

16 Micropositioning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 319J. Juuti, M. Leinonen, and H. Jantunen

17 Piezoelectric Actuator Designs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 341Aydin Dogan and Erman Uzgur

18 Piezoelectric Energy Harvesting using Bulk Transducers . . . . . . . . . . 373Shashank Priya, Rachit Taneja, Robert Myers, and Rashed Islam

19 Piezocomposite Ultrasonic Transducers for High-Frequency WireBonding of Semiconductor Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . 389Siu Wing Or and Helen Lai Wa Chan

20 Piezoelectric MEMS: Materials and Devices . . . . . . . . . . . . . . . . . . . . . 413Nazanin Bassiri-Gharb

21 High-Frequency Ultrasonic Transducers and Arrays . . . . . . . . . . . . . . 431K. Kirk Shung, Jonathan M. Cannata, and Qifa Zhou

22 Micromachined Ultrasonic Transducers . . . . . . . . . . . . . . . . . . . . . . . . 453Massimo Pappalardo, Giosue Caliano, Alessandro S. Savoia,and Alessandro Caronti

Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 479

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Contributors

E.K. AkdoganThe Glenn Howatt Electronic Ceramics Laboratory, Department of MaterialsScience and Engineering, Rutgers University, Piscataway, NJ 08854, USA

N. Bassiri-GharbGeorge W. Woodruff School of Mechanical Engineering,Georgia Institute of Technology, Atlanta, GA 30332-0405, USA

H. BeigeInstitute of Physics, Martin-Luther-Universitat Halle-Wittenberg,Friedemann-Bach-Platz 6, 06108 Halle, Germany

A. BencanJozef Stefan Institute, Jamova 39, 1000 Ljubljana, Slovenia

G. CalianoAculab – Department of Electronics, University “Roma Tre”, Roma, Italy

J.M. CannataNIH Resource on Medical Ultrasonic Transducer Technology,Department of Biomedical Engineering, University of Southern California,Los Angeles, CA 90089-1111, USA

A. CarontiAculab – Department of Electronics, University “Roma Tre”, Roma, Italy

J. Ceserano IIISandia National Laboratories, Albuquerque, NM 87185, USA

H.L.W. ChanDepartment of Applied Physics, The Hong Kong Polytechnic University,Hung Hom, Kowloon, Hong Kong

xi

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xii Contributors

Z. ChengMaterials Research and Education Center, 275 Wilmore Lab, Auburn University,Auburn, AL 36849-5341, USA

D. CertonUltrasonics Group (LUSSI), Francois Rabelais University, Tours, France

D. DamjanovicCeramics Laboratory, Swiss Federal Institute of Technology–EPFL, Lausanne,Switzerland

A. DoganDepartment of Materials Science & Engineering, Anadolu University, Eskisehir,Turkey

B. DubusISEN Department, IEMN, UMR CNRS 8520, 59046 Lille, France

A.V. GoltsevDepartment of Physics, University of Aveiro, 3810-193 Aveiro, Portugal

A.-C. Hladky-HennionIEMN, ISEN Department, UMR CNRS 8520, 59046 Lille, France

Y. HosonoCorporate Research & Development Center, Toshiba Corporation,1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan

R. IslamMaterials Science and Engineering, University of Texas Arlington, TX 76019, USA

K. ItsumiCorporate Research & Development Center, Toshiba Corporation,1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki, 212-8582, Japan

H. JantunenMicroelectronics and Materials Physics Laboratories, EMPART Research Groupof Infotech Oulu, University of Oulu, P.O. Box 4500, 90014 Oulu, Finland

J. JuutiMicroelectronics and Materials Physics Laboratories, EMPART Research Groupof Infotech Oulu, University of Oulu, P.O. Box 4500, 90014 Oulu, Finland

A.L. KholkinCenter for Research in Ceramics and Composite Materials (CICECO) &Department of Ceramics and Glass Engineering, University of Aveiro,3810-193 Aveiro, PortugalandA. F. Ioffe Physico-Technical Institute of the Russian Academy of Sciences,194021 St. Petersburg, Russia

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Contributors xiii

T. KondoFaculty of Engineering, Tokushima Bunri University, Sanuki-shi, 1314,Kagawa 769-2101, Japan

M. KosecJozef Stefan Institute, Jamova 39, 1000 Ljubljana, Slovenia

M. LeinonenMicroelectronics and Materials Physics Laboratories, EMPART Research Groupof Infotech Oulu, University of Oulu, P.O. Box 4500, 90014 Oulu, Finland

M. LethiecqUltrasonics Group (LUSSI), Francois Rabelais University, Tours, France

F. LevassortUltrasonics Group (LUSSI), Francois Rabelais University, Tours, France

B. MalicJozef Stefan Institute, Jamova 39, 1000 Ljubljana, Slovenia

R. MyersMaterials Science and Engineering, University of Texas Arlington, TX 76019, USA

S.W. OrDepartment of Applied Physics, The Hong Kong Polytechnic University,Hung Hom, Kowloon, Hong Kong

M. PappalardoAculab – Department of Electronics, University “Roma Tre”, Roma, Italy

N.A. PertsevA.F. Ioffe Physico-Technical Institute of the Russian Academy of Sciences,194021 St. Petersburg, Russia

S. PriyaMaterials Science and Engineering, Virginia Tech, Blacksburg, VA 24061, USA

T. RojacJozef Stefan Institute, Jamova 39, 1000 Ljubljana, Slovenia

A. SafariThe Glenn Howatt Electronic Ceramics Laboratory, Department of MaterialsScience and Engineering, Rutgers University, Piscataway, NJ 08854, USA

A.S. SavoiaAculab – Department of Electronics, University “Roma Tre”, Roma, Italy

A. SchoneckerFraunhofer Institute for Ceramic Technologies and Systems, 01277 Dresden,Winterbergstrasse 28, Germany

K.K. ShungNIH Resource on Medical Ultrasonic Transducer Technology,Department of Biomedical Engineering, University of Southern California,Los Angeles, CA 90089-1111, USA

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xiv Contributors

J.E. SmaySchool of Chemical Engineering, Oklahoma State University, Stillwater,OK 74078, USA

R. SteinhausenInstitute of Physics, Martin-Luther-Universitat Halle-Wittenberg,Friedemann-Bach-Platz 6, 06108 Halle, Germany

J. SuAdvanced Materials and Processing Branch, National Aeronautics and SpaceAdministration, Hampton, VA 23681, USA

M. El TahchiApplied Physics Laboratory, Physics Department, Faculty of Sciences II,Lebanese University, Fanar Campus, BP 90656, Jdeidet, Lebanon

T. TakenakaDepartment of Electrical Engineering (EE), Faculty of Science and Technology,Tokyo University of Science, Yamazaki 2641, Noda, Chiba-ken 278-8510, Japan

R. TanejaMaterials Science and Engineering, University of Texas Arlington, TX 76019, USA

L.P. Tran-Huu-HueUltrasonics Group (LUSSI), Francois Rabelais University, Tours, France

J. TresslerNaval Research Laboratory, Washington, DC 20375, USA

S. Trolier-McKinstryMaterials Science and Engineering Department & Materials Research Institute,The Pennsylvania State University, University Park, PA 16802, USA

B. TuttleSandia National Laboratories, Albuquerque, NM 87185, USA

E. UzgurDepartment of Materials Science & Engineering, Ondokuz Mayis University,Samsun, Turkey

Y. YamashitaToshiba Research Consulting Corporation, Kawasaki 212-8582, Japan

Q. Zhang187 Materials Research Laboratory, The Pennsylvania State University,University Park, 16802 PA, USA

Q.F. ZhouNIH Resource on Medical Ultrasonic Transducer Technology,Department of Biomedical Engineering, University of Southern California,Los Angeles, CA 90089-1111, USA

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Part IFundamentals of Piezoelectricity

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Chapter 1Thermodynamics of Ferroelectricity

E. Koray Akdogan∗ and Ahmad Safari

1.1 Introduction

This chapter is about the macroscopic theory of ferroelectrics, which is based onthe Landau theory of phase transformations. It was first proposed by Landau in the1930s to study a wide range of complex problems in solid-state phase transforma-tions in general, and ordering phenomena in metallic alloys in particular (Landauand Lifshitz 1980). It was further developed and brought to the realm of ferro-electrics by Devonshire (1949, 1951). It has since then proven to be a very ver-satile tool in analyzing ferroelectric phenomena, and has become a de facto tool ofanalysis among ferroelectricians.

At the heart of the Landau theory of phase transformations is the concept of orderparameter, which was first proposed in the context of order–disorder transformationinvolving a change in the crystal symmetry. In such systems, the material of inter-est transforms from a high-symmetry disordered phase to a low-symmetry orderedphase (de Fontaine 1979; Ziman 1979). The so-called broken symmetry of the crys-tal due to ordering is represented by an order parameter. Landau has shown that the(Helmholtz) free energy of an order–disorder transformation can be expressed verysimply as a Taylor series expansion of the order parameter describing the degree oforder (or disorder). Generally, the order parameter can be any variable of the systemthat appears at the phase transition point. In the case of ferroelectrics, it is the spon-taneous polarization. Originally, the Taylor expansion of the order parameter wasintended to be limited to temperatures close to the phase transformation temperature,as any mathematical series has a radius of convergence. However, quite oddly, it isa well-established fact that the free energy functional provides a very good approxi-mation even at temperatures far below the transition temperature once higher-orderexpansion terms are included.

E.K. AkdoganThe Glenn Howatt Electronic Ceramics Laboratory, Department of Materials Scienceand Engineering, Rutgers University, Piscataway, NJ 08854, USA

A. Safari, E.K. Akdogan (eds.) Piezoelectric and Acoustic Materialsfor Transducer Applications. 3c© Springer Science+Business Media, LLC 2008

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4 E.K. Akdogan, A. Safari

It should be remembered that the original Landau theory was constructed forsecond-order phase transformations, which are also known as continuous phase tran-sitions as there is no discontinuity in the entropy at the transition point. Moreover,the heat capacity and the elastic moduli display a so-called λ -type anomaly in theneighborhood of the phase transformation temperature (Landau and Lifshitz 1980).As most ferroelectric phase transitions are weakly first order, the Landau formalismhas successfully been extended to the study of ferroelectrics, for which the entropyis discontinuous (Devonshire 1949, 1951).

The literature on the Landau formalism is well-matured and extensive. Classicaltexts covering wide range of topics include Landau and Lifshitz’s Statistical Physics(1980) and Salje’s Phase Transformations in Ferroelastic and Co-Elastic Crystals(1990). Landau theory has been used quite successfully in describing phase trans-formations in a variety of materials systems, including ferromagnetic, martensitic(ferroelastic), and ferroelectric transitions with appropriate order parameters. Forinstance, proper ferroelectric, ferromagnetic, and ferroelastic phase transformationscan be described via the Landau potential, with the polarization Pi, magnetizationMi, or the self-strain as the order parameter; respectively (Wadhawan 2000).

From a historical perspective, it should be pointed out that the extensionof Landau theory to ferroelectric phase transformations, characterized by thenoncentrosymmetric displacements of atoms in the ferroelectric phase, was accom-plished by Ginzburg (Ginzburg 1945), which precedes Devonshire’s work on ferro-electrics (Devonshire 1949, 1951, 1954). Ginzburg and Levanyuk incorporated theeffect of spatially inhomogeneous thermal fluctuations of polarization near the phasetransformation (Levanyuk 1959; Ginzburg 1957). They introduced what is nowknown as correlation length, which defines the region confining polarization fluc-tuations. Such further developments have become the so-called Landau–Ginzburg–Devonshire (LGD) thermodynamic theory of ferroelectric phase transformations.

The LGD phenomenology enables one to study a variety of physical properties offerroelectrics in a rather straightforward fashion without referring to all the degreesof freedom. Excellent treatment of LGD phenomenological theory can be found inthe seminal articles by Devonshire (1949, 1951), in the textbooks by Strukov andLevanyuk (1998), Fatuzzo and Merz (1967), Jona and Shirane (1962), and Linesand Glass (1977), and in the articles by Cross and coworkers (Haun et al. 1987,1989a–e) and Damjanovic (1998).

This chapter was written to provide an uninitiated reader an initial exposure toferroelectric materials and their applications, thereby providing them the fundamen-tals for further study. In addition, this chapter also complements the ensuing twochapters of this volume, where the concepts introduced herein will be further de-veloped from the perspective of crystallography, crystal chemistry, and structure–property relations.

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1 Thermodynamics of Ferroelectricity 5

1.2 Landau–Ginzburg–Devonshire Formalism

1.2.1 Crystallographic Considerations

The evolution of spontaneous polarization and thus ferroelectricity in homogeneousnonlinear dielectric media is attributed to spontaneous displacement of atoms rela-tive to each other below a certain temperature, creating permanent dipole moments,as will be discussed in detail in Chaps. 2 and 3. The density of such dipole mo-ments is termed polarization, which is a vector. It is the most fundamental para-meter on which all the magnitudes of intrinsic (monodomain) dielectric, pyroelec-tric, ferroelectric, and piezoelectric properties depend. The orientation of this vectoris, in turn, dictated by the point group of the polar phase, which forms upon theparaelectric–ferroelectric phase transition.

Most ferroelectric materials that are of practical interest have a perovskite struc-ture with the chemical formula ABO3. Some typical examples are BaTiO3 (BTO),PbTiO3 (PTO), (Ba,Sr)TiO3 (BST), and lead-based solid solutions such asPb(Zr,Ti)O3 (PZT). Figure 1.1a shows the perovskite structure of PTO abovethe transformation temperature, where the TiO6 octahedra are linked in a regularcubic array forming the high-symmetry nonpolar m3m prototype for many ferro-electric materials. The six-fold coordinated site in the center of the octahedron isfilled by a small, highly-charged Ti4+ (or other transition metal oxide), and thelarger 12-fold coordinated “interstitial” site between octahedral carries typicallya larger Pb2+. For instance, the spontaneous polarization in PTO arises from thespontaneous displacement of Ti4+ and O2− ions relative to Pb2+ ions, therebycreating a noncentrosymmetric lattice. Figure 1.1b depicts an example of such ashift in the tetragonal phase, resulting in a net polarization along the [001] (c-axis)of the tetragonal unit cell. In general, the axis of polarization may be parallel to theunit cell edge, the face diagonal, and the body diagonal as in the case of tetragonal

Lead

Oxygen

Titanium

+Ps

–Ps

(a) (b)

Fig. 1.1 (a) The perovskite crystal structure of PbTiO3 and (b) off-center shift of titanium ionalong 〈001〉 below the ferroelectric phase transformation temperature in the tetragonal phase

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6 E.K. Akdogan, A. Safari

(4mm), orthorhombic (mm2), and rhombohedral (3m) point groups, respectively.In lower symmetry point groups (monoclinic and triclinic polar point groups), theorientation of the polarization vector is not trivial (see Chap. 3 for more details).

The polarization is accompanied by the so-called eigenstrain or spontaneousstrain, which is known as the secondary order parameter in ferroelectrics. The saidstrain is due to coupling of the spontaneous polarization vector with the strain tensorvia electrostriction – the most fundamental electromechanical coupling mechanismin all materials. In the case considered herein, a spontaneous polarization along thecube edge results in an elongation along the direction of polarization and a corre-sponding contraction along directions perpendicular to it, reducing the symmetry totetragonal Laue class 4/mmm. This is not a polar crystal class. The polar point group4mm forms because of the off-center displacement of the Ti4+ ion, which breaks themirror plane. Following the same line of reasoning, it can be stated that polarizationalong the face diagonal reduces the symmetry to orthorhombic (mm2) and polar-ization along the body diagonal reduces it to rhombohedral (3m), as in the BTOsystem as shown in Fig. 1.2. The high-symmetry, nonpolar cubic phase transformssequentially to low-symmetry ferroelectric phases, with decreasing temperature.

Ps = 0

(a)

Ps

Ps

(c)

(b)

Ps

(d)

3mmm2

m3m4mm

Fig. 1.2 The symmetry change and orientation of the spontaneous polarization direction for (a)cubic (m3m), (b) tetragonal (4mm), (c) orthorhombic (mm2), and (d) rhombohedral (3m) phasesin BaTiO3 for (a) T > 132◦C, (b) 5 < T < 132◦C, (c) −90◦C < T < 5◦C, and (d) T < −90◦C

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1 Thermodynamics of Ferroelectricity 7

1.2.2 Thermodynamic Formalism

Consider a simple ferroelectric transformation where, upon cooling, the paraelectric(nonpolar) cubic m3m phase transforms to a ferroelectric tetragonal 4mm phase. Asseen in Fig. 1.2b, the spontaneous polarization and the accompanying lattice distor-tion is along six-fold crystallographically degenerate 〈001〉 directions. For stress-free single crystals, the (Helmholtz) free energy density can be described by anLGD potential. In constructing such a free energy functional, a Taylor series rep-resentation is utilized and the free energy density is expanded into the powers ofpolarization. Only the even powers are retained in the said series as the free energyfunctional has to be an even function, i.e. ∆A(−P) = ∆A(P). Since the example wedeal here is a uniaxial ferroelectric (tetragonal), only one order parameter is needed.Then, the free energy functional takes the following simple form:

∆AL(P,T ) =12

αP2 +14

β P4 +16

γP6 + · · · , (1.1)

where P is the polarization (which is the order parameter of the phase transforma-tion), and α, β , and γ are the so-called expansion (or the dielectric stiffness) coeffi-cients, which are Taylor series as a function (or any other intensive thermodynamicvariable) of temperature themselves. Traditionally, only the α coefficient is taken astemperature-dependent, which is the first nonvanishing term of its Taylor expansionin temperature. It takes the following form, which one immediately identifies as thereciprocal Curie-Weiss law:

α =T −TC

ε0C, (1.2)

where TC and C are the Curie-Weiss temperature and constant, respectively, andε0 is the permittivity of free space. The other two expansion coefficients are usuallytaken to be independent of temperature.

The Landau potential should exhibit only one minima at P = 0 above TC corre-sponding to the centrosymmetric cubic nonpolar phase. Below TC, the free energycurve should have two minima corresponding to two identical ferroelectric statesbut with opposite orientation of the polarization direction along the (001) orienta-tion (PS and −PS). The variation of the free energy given in (1.1) as a functionalof temperature and polarization is illustrated in Fig. 1.3 for a second-order phasetransition, while Fig. 1.4 illustrates the same for a first-order transition. If β < 0, thephase transition from the paraelectric state is of first order, which reveals itself as adiscontinuity in PS, and lattice parameters at TC, as well as thermal hysteresis in thesame parameters around TC. The same transition is said to be second order if β > 0,which results in a gradual variation in PS, and lattice parameters below TC with nothermal hysteretic. Most importantly, both paraelectric and ferroelectric phases co-exist at the transition temperature; there is latent heat associated with the transition,and the atomic displacements in the unit cell are finite. On the other hand, no phasecoexistence is possible in a second-order phase transition; there is no latent heat (al-though there is a discontinuity in heat capacity), and the atomic displacements in theunit cell can –in principle – be infinitesimally small. The γ is positive for stabilityreasons.

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8 E.K. Akdogan, A. Safari

T

P∆A(P)

(a) (b) (c)

PS≠0 PS≠0 PS=0

Ttr=Tc Ttr=Tc

T = Tc

1/εr

–P +P

T>Tc

T<Tc

1/C

T

Fig. 1.3 (a) Variation of free energy density with temperature and polarization. Arrows in wells in-dicate spontaneous polarization states, (b) Variation of spontaneous polarization with temperature,and (c) Variation of reciprocal dielectric constant with temperature for a second-order ferroelectricphase transition

(a) (b)−P T

P

T

T > Tc

T < Tc

T = Tc

+P

∆A(P)

1/C

(c)T

1/εr

Ps≠0 Ps≠0 Ps=0

Ttr≠TcTtr≠Tc

T

1/C

Tc

Fig. 1.4 (a) Variation of free energy density with temperature and polarization. Arrows in wells in-dicate spontaneous polarization states, (b) Variation of spontaneous polarization with temperature,and (c) Variation of reciprocal dielectric constant with temperature for a first-order ferroelectricphase transition

The spontaneous polarization PS in the tetragonal phase can be obtained from thecondition for thermodynamic equilibrium; i.e. (∂∆A/∂P) = 0 such that:

P2S (T ) =

−β +√

(β 2 −4αγ)2γ

. (1.3)

The spontaneous polarization (1.3) results in spontaneous strains, which are theso-called structural component of the phase transformation. However, it shouldbe noted that self-strains are not true strains but rather a geometric description ofthe lattice distortion induced by the displacement of atoms in the unit cell upon thephase transition. The components of the spontaneous strain tensor for point group4mm, for example, are defined as:

xs1 = xs

2 =at −ac

ac= Q12P2

S , xs3 =

ct −ac

ac= Q11P2

S , (1.4)

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1 Thermodynamics of Ferroelectricity 9

100 200 300 400 500 600 0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

Temperature (°C)

Spo

ntan

eous

pol

ariz

atio

n (C

/m2)

Ttr~492.2°C

4mm

Ps

m3m

at

acac

ac

at

c t

100 200 300 400 500 600

Temperature (°C)

0.385

0.390

0.395

0.400

0.405

0.410

0.415

0.420

Latti

ce p

aram

eter

(nm

)

Ps

a t

c t

m3m

4mm

Tc

ac

ac

ac

ac

ata t

c t

Fig. 1.5 The variation of the spontaneous polarization (left) and lattice parameters (right) withtemperature in PbTiO3 (adapted from Haun et al. 1987)

where at and ct are the lattice parameters in the tetragonal ferroelectric state and ac

is the lattice parameter of the cubic phase extrapolated to the temperature of interestfor T < TC. Qi js are the fourth-rank electrostriction coefficients (in Voigt notation),coupling the spontaneous polarization with the spontaneous strains.

In Fig. 1.5 the variation of the spontaneous polarization and the lattice parame-ters of PTO as a function of temperature are depicted; respectively (Haun et al.1987). The said variations were obtained using experimentally determined expan-sion parameters in conjunction with the formalism presented herein as reported byHaun et al. (1987) in their phenomenological theory. It should be borne in mindthat the macroscopic description of the ferroelectric state obtained from such athermodynamic formalism applies to monodomain single crystals. Multidomain fer-roelectrics and polycrystalline ceramics require more sophisticated theoretical treat-ments as discussed to some extent in Chap. 2.

1.2.3 Further Development of the Thermodynamic Formalism:Elastic and Electrostatic Free Energy Functionals

Up to this point, we have taken into account the temperature dependence of the freeenergy associated with the ferroelectric phase transition only. To provide a macro-scopic description of a ferroelectric’s piezoelectric properties, the effect of appliedstresses has to be incorporated. Likewise, one must incorporate an electrostatic en-ergy term into the free energy functional to account for the dielectric properties ofa given ferroelectric. In what follows, such further developments of the thermody-namic formalism will be presented.

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10 E.K. Akdogan, A. Safari

The energy density due to applied elastic stresses imposed on the prototypicalcubic crystal is given by:

∆A(σ) = 12 S11(σ2

1 + σ22 + σ2

3 )+ S12(σ1σ2 + σ1σ3 + σ2σ3)+ 12 S44(σ2

4 + σ25 + σ2

6 ),

(1.5)

where Si j are the elastic compliances at constant polarization and σi are componentsof the applied elastic stress tensor. The free energy expression in (1.5) describessolely the change in free energy of the crystal due to an applied mechanical pertur-bation. However, one needs to remember that the applied stress is coupled with thepolarization because of the electrostrictive effect. In other words, the spontaneouspolarization induces a spontaneous strain, following a second-order variation in theform of xi = Qi jP2

s , to which there corresponds a strain energy density as well. Thenthe free energy contribution can be expressed as:

∆A(σ : P) = x01(σ1 + σ2)+ x0

3σ3 = Q12P2s (σ1 + σ2)+ Q11σ3P2

s . (1.6)

The stored electrostatic energy density contribution due to an applied field is simplygiven by

∆A(P) = E ·P, (1.7)

where E is the electric field along the polarization direction.Having developed pertinent free energy functionals for all important phenomena

relevant to a ferroelectric crystal, the overall free energy functional is simply ob-tained by scalar addition of each expression owing to the fact that energy is additive:

∆G(P,T,σi,E) = ∆A(P,T )−∆A(σ)−∆A(σ : P)−∆A(E). (1.8)

By inserting all individual free energy functionals, the following explicit form of(1.8) is obtained:

∆G(P,T,σi,E) = 12 αP2 + 1

4β P4 + 16 γP6 − (

12 S11(σ2

1 + σ22 + σ2

3 )

+S12(σ1σ2 + σ1σ3 + σ2σ3)+ 12 S44(σ2

4 + σ25 + σ2

6 ))

−(Q12P2

s (σ1 + σ2)+ Q11σ3P2s

)−E ·P. (1.9)

It should be noted that the overall free energy functional (1.9) is the one to use(called the elastic Gibbs function) in describing ferroelectrics under various circum-stances as the Helmholtz free energy functional (1.1) describes the internal energy ofthe system in the absence of external perturbations. Once the elastic Gibbs functionis in hand, virtually all material properties can be obtained by evaluating the first andsecond derivatives. For example, the dielectric susceptibility along the polarizationaxis at zero stress is given by (∂ 2G/∂P2)−1 such that:

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1 Thermodynamics of Ferroelectricity 11

(∂ 2∆G∂P2

)=

(∂E∂P

)= χ3 = (α + 3β P2 + 5γP4)−1, (1.10)

where the relative dielectric constant along the same axis is defined as:

εrε0 = 1 + χ3 or εr ∼= χ3/ε0 (1.11)

because χ3 � 1.The piezoelectric charge coefficient, which is very important in the context trans-

ducer applications, describing induced strain due to an applied electric field alongthe (001) direction of a tetragonal ferroelectric crystal is defined as:

d33 = χ3(∂ 2G/∂P∂σ3) (1.12)

from which the explicit expression for d33 can be found as:

d33 = ε0χ3Q11Ps. (1.13)

It is peculiar to observe that piezoelectricity is nothing but electrostriction that isbiased by spontaneous polarization based on (1.13).

Up to this point, the thermodynamic development has been based on a single-order parameter, which is sufficient to take into account for the cubic to tetragonalphase transitions in ferroelectric. For phases of reduced symmetry, as exemplified bythe orthorhombic and rhombohedral phases in BTO, the elastic Gibbs functional be-comes mathematically more demanding but the approach remains the same. Specifi-cally, in the case of the orthorhombic phase, the atomic shifts and the correspondingpolarization is along the 〈110〉 directions, which requires one to use two order para-meters, i.e. Px and Py. For the rhombohedral phase, the said shifts occur along 〈111〉,which requires one to use three order parameters, i.e. Px, Py, and Pz. For even furtherreduced symmetries such as the monoclinic and triclinic, Taylor expansion beyondthe sixth order would be needed, making the manipulation of tensor quantities verytedious (Devonshire 1949, 1951). Additional terms may arise if there are structuralvariations due to the tilting or rotation of the oxygen octahedron as it is the casefor the “incipient” ferroelectric SrTiO3 (Slonczewski and Thomas 1970; Pertsevet al. 2000). In such cases, two coupled sets of order parameters, one set describ-ing displacements and the other set describing rotations, may have to be employed(Salje 1990).

1.3 Ferroelectric Hysteresis

Perhaps the most important property of ferroelectrics is the reversal of the polar-ization vector upon to the application of a physically realizable electric field. Sucha reversal is called switching, and refers to the change in orientation of the polar-ization vector from one crystallographically equivalent polar direction to another.

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12 E.K. Akdogan, A. Safari

These crystallographically equivalent directions are, in turn, called domain states ororientational variants. From a thermodynamics point of view, the said domain statesrefer to energetically equal states on the free energy density hypersurface, whichdiffer in orientation only. In common ferroelectric parlance, one would encounterthe term domain switching as well. However, what is switched is actually the po-larization vector. In each domain, the polarization vectors are aligned parallel andchange orientation in a cooperative manner.

The aforementioned switching property of ferroelectrics is the very reason whythey are the material of choice in application since a multidomain polycrystallineferroelectric can be made piezoelectric upon the application of a strong enoughelectric field in a process called poling as discussed in the ensuing chapters ofthis book.

1.3.1 Definition of Terms

As pointed out earlier, the polarization (or the relative displacements of ions) in atetragonal ferroelectric can be along the positive or negative direction of the 〈001〉family of direction (see Fig. 1.1 for the [001] direction). The equilibrium condition∂∆G/∂P = 0 at P = PS and P = −PS is, however, identical as changing the ori-entation of the polarization vector should not change the free energy of the system,i.e. ∆G(P) = ∆G(−P). Therefore, one has to conclude that these orientation variantsshould be equally probable, resulting in regions (or domains) with opposite directionof polarization, yielding zero net polarization in a so-called “virgin” ferroelectric –a ferroelectric to which no electric field is ever applied.

If a uniform electric field is applied along the positive [001] direction, the volumefraction of the domains that are favorably oriented with respect to the field increaseswill increase via domain wall motion, giving rise to a measurable net polarization.The polarization behavior is nonlinear as shown in Fig. 1.6. The extent of the re-orientation of the domains along the applied field direction is governed by the pointgroup of the crystal in question. Once all the domains have “switched,” further in-crease in the applied field results in a proportional increase in the polarization untila saturation value is reached. Upon the removal of the applied field, the ferroelec-tric does not revert to its initial state although some domains do switch back. Thevalue of the polarization at zero field after poling is called the remnant polariza-tion (PR). The subsequent application of a uniform field along the negative z-axisincreases the volume fraction of domains with P = −PS. At a critical field −EC,called the coercive field, the volume fractions of the domains become equal and thenet polarization is zero. Again, an increase in the negative field eventually yields asingle-domain state with the polarization pointing in the negative z-direction. Uponremoving the negative field, the polarization of the ferroelectric reverts to −PR. Thisprocess results in a hysteresis corresponding to an energy loss. This energy is essen-tially spent to nucleate and grow domains with the opposite polarization.

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1 Thermodynamics of Ferroelectricity 13

1.3.2 Theoretical Analysis of Hysteresis Phenomena

Consider an unclamped ferroelectric crystal of point group 4mm to which is applieda uniform electric field along the [001] direction in an infinitesimally slow fashion.Let us further assume that the said experiment is carried far away from the phasetransition so that Landau formalism can be employed, with no need to considerthermal fluctuations in the polarization. The appertaining free energy functional onehas to use is:

∆G(P,T,E) =12

αP2 +14

β P4 +16

γP6 −EP. (1.14)

By taking the derivative of (1.14) with respect to polarization and equating it tozero, the so-called dielectric equation of state is obtained as follows:

E = αP+ β P3 + γP5. (1.15)

The said equation of state defines the equilibrium polarization of a ferroelec-tric in the presence of an applied electric field. The variation of polarization withapplied field far below the transition temperature is depicted in Figure 1.6. In theregion A–B, the field-induced response is monotonic, followed by a region of insta-bility region B–C as the second derivative of the Gibbs function is negative. Thismeans that at B, defined by a critical field −EC, the orientation of the polariza-tion vector along the positive 〈001〉 direction becomes unstable. The same is truefor point C, where the polarization vector along the negative 〈001〉 axis becomesunstable at EC. The analytical expression given in (1.15) traces the path A–B–C–D. However, the B–C portion of the trace represents metastable states in the senseindicated above, and cannot be observed experimentally. What is observed in an ex-periment is, however, the trace A–B–B′–C–C′, which forms the so-called hysteresisloop of the ferroelectric.

From the hysteresis loop, one obtains very useful information: From the inter-section of the polarization axis at E = 0, the remnant polarization is obtained. Inthe case of a single crystal, if the measurement axis if parallel to the polar axis, theremnant polarization is indeed the spontaneous polarization itself. Otherwise, the

Fig. 1.6 Typical hysteresisloop as obtained from (1.15)for T � TC for a second-orderferroelectric system. All mainfeatures of the hysteresis loopare the same for a first-ordersystem, except the metastablesegment B–C. Definitions ofspontaneous polarization andintrinsic coercive field arethe same for both types ofsystems

+ Ps

+ –Ec

A

B

C

D

Electric Field

Pol

ariz

atio

n

C’

–Ps

+Ec

B’

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14 E.K. Akdogan, A. Safari

component of the spontaneous polarization along the measurement axis is obtained.In the case of a polycrystalline ceramic, the remnant polarization is the apparentspontaneous polarization, but not necessarily the single crystal value. The intersec-tion of the electric field axis at P = 0 gives the coercive field of the material inquestion. The value of the coercive field determines the field required to induce thereversal of the polarization vector. The asymmetry in the ±Ec with respect to the ori-gin is an indication of internal bias, which is typically attributed to defects and spacecharge and is mostly observed in polycrystalline ceramics, multilayer structure, aswell as thin films. The slope of the trace at E = Ec is indicative of how well a singlecrystal is poled. Any substantial deviation from 90◦ is attributed to incomplete pol-ing. In polycrystalline ceramics, the said deviation is always substantial no matterhow well a specimen is poled and is essentially related to the charge distribution inthe vicinity of grain boundaries and such.

In summary, it should be pointed out that the coercive predicted using the Landauformalism is typically two to three orders of magnitude larger than what is measuredexperimentally. That is so because switching in the Landau formalism is modeledas a thermodynamic instability of the polarization induced by an applied field in thereverse direction, which ignores nucleation and growth of domains. Although therehave been many efforts to theoretically describe the polarization reversal based ondomain wall motion and nucleation and growth of domains (Ishibashi 1992; Shurand Rumyantsev 1994; Tagantsev et al. 1994; Tagantsev et al. 1995; Chai et al.1997; Chen et al. 1997; Shur et al. 1997; Chen and Lynch 1998; Hwang et al. 1998;Damjanovic 1998), domain switching in ferroelectrics still remains a formidableproblem for which no fully matured theory exists. However, there has been someprogress in this line of research by the use of a modified Kolmogorov-Avrami for-malism; yet much remains to be explored (Ishibashi and Takagi 1971; Ishibashiand Orihara 1986, 1992; Ishibashi 1992; Orihara and Ishibashi 1992; Orihara et al.1994).

1.4 Concluding Remarks

In this chapter, a brief survey of the thermodynamics of ferroelectrics is providedto establish a self-consistent foundation for the chapters that follow, which will ad-dress materials, device design, and application of ferroelectrics as a piezoelectric.It has been shown that that the Landau formalism is a time-tested macroscopic ther-modynamic theory, which successfully accounts for many phenomena related toferroelectricity such as the phase transition, phase transition temperature, tempera-ture dependence of dielectric constant, piezoelectric coefficients, among others. Thepractical limitations of the Landau formalism have to be identified as well: Firstand foremost, as all macroscopic theories, it is devoid of any atomic interpretationof the macroscopically observed phenomena. Second, it does provide very limitedinsight into hysteresis phenomena. Third, the properties calculated using such ther-modynamic theories are the so-called intrinsic, quasi-static, and monodomain prop-erties. Most ferroelectrics are multidomain, and the extrinsic contribution to material

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1 Thermodynamics of Ferroelectricity 15

properties due to domains cannot be overlooked. Fourth, frequency response of anygiven property cannot be analyzed. Nonetheless, the Landau formalism still remainsas a powerful tool in the arsenal of ferroelectricians.

Acknowledgments The authors wish to express their gratitude to the Glenn Howatt Foundationat Rutgers University for their unfaltering financial support.

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Chapter 2Piezoelectricity and Crystal Symmetry

A.L. Kholkin,∗ N.A. Pertsev, and A.V. Goltsev

In this chapter, the symmetry aspects of the piezoelectric effect in various materials(single crystals, ceramics, and thin films) are briefly overviewed. First, the third-ranktensor of piezoelectric coefficients defined in the crystallographic reference frame isdiscussed. On this basis, the orientation dependence of the longitudinal piezoelectricresponse in ferroelectric single crystals is described. This dependence is especiallyimportant for relaxor single crystals, where a giant piezoelectric effect is observed.Then, the effective piezoelectric constants of polydomain crystals, ceramics, andthin films and their dependence on crystal symmetry are discussed. The domain-wall contribution to the piezoelectric properties of ferroelectric ceramics and thinfilms is also described. Finally, the crystallographic principles of piezomagnetic,magnetoelectric, and multiferroic materials are presented.

2.1 Historical Overview

Piezoelectricity (or, following direct translation from Greek word piezein, “pres-sure electricity”) was discovered by Jacques Curie and Pierre Curie as early as in1880 (Curie and Curie 1880). By analogy with temperature-induced charges in pyro-electric crystals, they observed electrification under mechanical pressure of certaincrystals, including tourmaline, quartz, topaz, cane sugar, and Rochelle salt. This ef-fect was distinguished from other similar phenomena such as “contact electricity”(friction-generated static charge). Even at this stage, it was clearly understood thatsymmetry plays a decisive role in the piezoelectric effect, as it was observed only for

A.L. KholkinCenter for Research in Ceramics and Composite Materials (CICECO) & Department of Ceramicsand Glass Engineering, University of Aveiro, 3810-193 Aveiro, PortugalandA. F. Ioffe Physico-Technical Institute of the Russian Academy of Sciences,194021 St. Petersburg, Russia

A. Safari, E.K. Akdogan (eds.) Piezoelectric and Acoustic Materialsfor Transducer Applications. 17c© Springer Science+Business Media, LLC 2008

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18 A.L. Kholkin et al.

certain crystal cuts and mostly in pyroelectric materials in the direction normal topolar axis. However, Curie brothers could not predict a converse piezoelectric effect,i.e., deformation or stress under applied electric field. This important property wasthen mathematically deduced from the fundamental thermodynamic principles byLippmann (1881). The existence of the converse effect was immediately confirmedby Curie brothers in the following publication (Curie and Curie 1881). Since then,the term piezoelectricity is commonly used for more than a century to describe theability of materials to develop electric displacement D that is directly proportionalto an applied mechanical stress σ (Fig. 2.1a). Following this definition, the elec-tric charge appeared on the electrodes reverses its sign if the stress is changed fromtensile to compressive. As follows from thermodynamics, all piezoelectric materialsare also subject to a converse piezoelectric effect (Fig. 2.1b), i.e., they deform un-der applied electric field. Again, the sign of the strain S (elongation or contraction)changes to the opposite one if the direction of electric field E is reversed. Shearpiezoelectric effect (Fig. 2.1c) is also possible, as it linearly couples shear mechan-ical stress or strain with the electric charge.

Fig. 2.1 Schematic representation of the longitudinal direct (a), converse (b), and shear (c) piezo-electric effects