Proceedings of theXIII International Workshop

on

Physics of Semiconductor Devices(IWPSD - 2005)

December 13-17, 2005

Vol. II

Editors:Vikram KumarS.K. AgarwalS.N. Singh

TECh'NISCHEINFORMATIONSBIBLIOTHEK

UNIVERSITATSBIBLIOTHEKHANNOVER

National Physical LaboratoryNew Delhi

ALLIED PUBLISHERS PVT. LIMITED

New Delhi • Mumbai • Kolkata • Lucknow • ChennaiNagpur • Bangalore • Hyderabad • Ahmedabad

Contents

Vol. IICo-Sponsors v

Preface vii

Section E: High Frequency Devices

Invited Papers

133. Material Issues in High-Frequency GalnP/GaAs 741Heteroj unction Bipolar TransistorsShinji Nozaki, Hiroshi Ono, Kazuo Uchida and Hiroshi Morisaki

134. Effect of Transition Metal Ion Doping on the Electrical, 748Optical and Magnetic Properties of ZnOShubra Singh, N. Rama and M.S. Ramachandra Rao

135. Liquid Junctions to Wide Bandgap Semiconductors 750Erhard Kohn, Andrej Denisenko, T. Ive, Oliver Brand, Armin Dadgar,Alois Krost and Werner Haenni

136. Device Performance Variations in 20 nm Tri-Gate Finfets 760Chaitanya Kshirsagar, Anuj Madan and Navakanta Bhat

137. Anode Engineering for the Insulated Gate Bipolar Transistor- 767A Unified ViewDavid W. Green, K.V. Vershinin, M. Sweet and E.M. Sankara Narayanan

138. Terahertz Spectroscopy Using High Power and Wide Frequency 775Range GaP Raman Terahertz (GRT) GeneratorJun-ichi Nishizawa and Tetsuo Sasaki

139. High-Frequency Noise of MOSFETS - Characterization and 787ModelingChih-Hung Chen

140. On the Reliability of U-Shaped Trench-Gated Metal-Oxide-Silicon 796Field-Effect TransistorsO.O. Awadelkarim, S.A. Suliman, K. Sarpatwari, L. Passmore,R.S. Ridley and G.M. Dolny

141. Modeling and Characterisation of High Frequency Effects in 804VLSI InterconnectsNarain D. Arora

Contributed Papers

142. A Novel way to Reduce Conduction Current in 817ALO.7GAO.3AS/GAAS Heterostructure Barrier VaractorsDibakarRoy Chowdhury Mustafa Saglam, Kabula Mutamba andHans L. Hartnagel

143. Design Consideration for Sub-MM Wave Silicon DDRS 822Including Drift, Diffusion and Tunnel CurrentsS.P. Pati and P.R. Tripathy

144. An Analytical Model for I-V Characteristics of Sub-Micron 826GaN MESFET Using an Exact Velocity Field Dependence forMicrowave ApplicationsSneha Kabra, Harsupreet Kaur, Subhasis Haldar, Mridula Gupta andR.S. Gupta

145. Analytical Model for Negative Differential Conductivity of 830ALGAN/GAN High Electron Mobility TransistorR. Yahyazadeh, A. Asgari and M. Kalafi

146. Shannon-Implantation Control of Gate-Edge Field Initiated 835GaAs-MESFET Breakdown VoltageY. Kumar, V.K. Tandon and S. Sarkar

147. Design and Simulation of Logic Gates at Room 839Temperature using Single Electron TransistorsA. Venkataratnam and A.K. Goel

148. Thermal Conduction in G A N Crystals 843M.D. Kamatagi, N.S. Sankeshwar and B.G. Mulimani

XI

149. Pulse Reversal Electrodeposition for Fine-Grained Structure 847and Superior Wire Bond Strength in Metallisation of MMICsG. Sai Saravanan, Sandeep Chaturvedi, S.D. Prasad, Sangam Bhaike,K. Muraleedharan, H.S. Sharma and H.P. Vyas

150. Influence of Oxygen Plasma Treatment on the Uniformity of 852Activation of Rapid Thermal Annealed GaAs WafersG. Sai Saravanan, M.N. Mudholkar, Mahadeva BhatK,Vijay V. Subraveti, A.V.S.K. Rao, K. Muraleedharan,A.P. Pathak and H.P. Vyas

151. 4H-SiCVS6H-SiC for Realisation of Impatt Diode 857

S.R. Pattanaik, G.N. Dash and S.K. Swain

152. Low-Power Auto-Focusing Calculation Method using 861Mid-Frequency DCT Operator for Mobile PhoneS.Y. Lee, S.S. Park, T.T. Hoang, Y. Kumar, S. W. Kim,J.G. Lee, J.S. Moon, J.H. Moon and C.S. Kim

153. An Accurate and Efficient Method for Small Signal 865Parameter Extraction for MESFETsZameer Iqbal, Ashok Kumar, Sudhir Kumar, R. K. Khatri, H. P. VyasShivam Priyadarshi, C. Parikh. and D. Nagchaudhari

Section F: Organic Semiconductors

Invited Papers

154. Photoconduction in Alq3 873

Debdutta Ray, Meghan P. Patankar, N. Periasamy and K. L.Narasimhan

155. A Step Towards Molecule Based Nanoelectronics: Electronic 878Transport Through Single Molecule using NanoelectrodesSubhasis Ghosh

156. Solar Cells with Organic Molecules and 884Conjugated PolymersRavi Mosurkal, Sandip Sengupta and Jayant Kumar

157. Recent Trends in Conjugated Polymer Solar Cells 891

P.K.Bhatnagar, Sukhbinder Singh Rait, Shipra Kashyap and PC. Mathur

XII

158. Surface Polarisation Phenomena of Organic Monolayers as 898a Two-Dimensional System and its Application to OrganicElectronic DevicesMitsumasa Iwamoto and Takaaki Manaka

Contributed Papers

159. Light Emitting Devices with Triple Layer Structure of Small 911Organic MoleculesKanchan Saxena, Ritu Srivastava, M. N. Kamalasanan and Dalip Singh Mehta

160. PANLLDPE Conducting Composites: Synthesis, 915Characterisation and ApplicationsS.K. Dhawan, R. Rathore, P. Saini, M.N. Kamalasannan and S.S. Bawa

161. Insitu Polymerization of Conducting Polymers in the 920Presence of Nano Ferromagnetic ConstituentsNirmala Meena, Nikhil Sobti, Kuldeep Singh, Parveen Saini, R.K. Kotnala,R.P. Pant, S.K. Dhawan, S.S. Bawa and PC. Kothari

162. Effect of Semiconductor Thickness on the Device 925Characteristics of Organic Thin Film TransistorsMade of PentaceneDipti Gupta, Monica Katiyarand Deepak

163. Design and Synthesis of Processable Polyanilines for 930Technological ApplicationsParveen Saini, Kuldeep Singh, S. K. Dhawan and S. S. Bawa

164. Doping of Iron (II) Phthalocyanine With TiO, For Improving 935Response to Wider Dose Range of Gamma RadiationM.S. Roy, Anil Gautam, Narottam Prasad, Manish Kumar,Y.S. Deo/ and G.D. Sharma

165. Electrical Switch With High ON-OFF Ratio Based on 939Field Induced Conductance Transition in Organic Thin FilmsRuchi Agrawal and Subhasis Ghosh

XIII

166. Electrical and Morphological Characterisation of Sulfamic 943Acid Doped Polyaniline-PVC FilmsVazid AH, Fozia Z. Haque, Pushplata Tripathi, Vilakshan Singh,Z. H. Zaidi and M. Husain

167. Synthesis and Characterisation of Te Doped Polyaniline 948

Samrana Kazim, Vazid AH, M. Zulfequar, M. Mazharul Haq and M. Husain

168. Electrical Conductivity and Dielectric Properties of 952Sulfamic Acid Doped PolyanilineSadiaAmeen, Vazid AH, M.Zulfequar, M.Mazharul Haq and M.Husain

169. Electrical and Photovoltaic Response of Bulk Hetero-Junction 956Device Made From Poly (3-Phenylhydrazone Thiophene )( PPHT ) and Viologen (VOL)G. D. Sharma, Shailendra Kumar Sharma, Raj Kumar and M. S. Roy

170. Charge Generation Process and Photovoltaic Effects in 961Dye-Sensitised Iron Phthalocynine Based Thin Film DeviceM. S. Roy, Vijay Singh, Manish Kumar, Narottam Prasad and G. D. Sharma

171. Green Emission From Organic Light Emitting Diode Based 965on a Magnesium ComplexApama Misra, Pankaj Kumar, Lokendra Kumar, Nikhil Ganesh,Mohit Gupta, S. K. Dhawan, M. N. Kamalasanan and Subhas Chandra

172. Effect of Substrate Preparation on Performance of Indium 970Tin Oxide / Poly (3-Hexylthiophene 2,5-diyl) / AluminiumThin Film DevicesRashmi, Jaya, Praveen Saho, Upendra Kumar, Vanita Agarwal,Ashok Kapoor, V. R. Balakrishnan and P. K. Basu

173. Fabrication, Characterisation and Applications of 974Polymer Solar CellsRaghubir Singh Anand, Anjali Giri And Ramesh Prasad

174. SensitisationofTiO2 Quantum Dots in Micro-Emulsion 978by Photoexcited Dye MoleculesH. N. Ghosh, M. C. Rath, G. Ramakrishna, D. K. Palit and T. Mukherjee

XIV

175. Charge Transfer Pair Formation in Thin Film of 982Porphyrin-Cyanine ComplexDebdutta Ray, Jaykrushna Das, Pabitra K. Nayak, Meghan P. Patankar,N. Periasamy and K.L. Narasimhan

176. Nature of Electron and Hole Current in 986ITO/PEDOT/MEH:PPV/Ca-Al Polymer Light Emitting DiodesT.Manojaya, Asha Awasthi and J.Narain

Section G: Modeling and Simulations

Invited Papers177. Non-Uniformly Doped Gate Electrode Workfunction 995

Engineered MOSFET: Novel Design Architecture forControlling Short Channel Effects and ImprovingGate Transport EfficiencyR.S. Gupta, Kirti Goel, ManojSaxena andMridula Gupta

178. Modeling of Resistivity and the Temperature Coefficient of 1003Resistivity of Heavily Doped PolysiliconEnakshiBhattacharya, Manjula S.R., Teweldebhran Kifle and K.N. Bhat

179. Modeling of the Electrical Effect of Dislocations in HgCdTe 1013Infrared PhotodiodesVishnu Gopal and Sudha Gupta

Contributed Papers

180. Strained-Si MOSFETs for RF Applications 1025A.R. Saha, S.S. Mahato and C.K. Maiti

181: Threshold Voltage Model for Short-Channel MOSFETS 1030with Quantum EffectsTina Mangla, Amit Sehgal, Mridula Gupta and R.S. Gupta

182. AC Performance of Germanium n-MOSFETs 1035A.R. Saha, S.S. Mahato and C.K. Maiti

XV

183. Poly-Crystalline Silicon Thin Film Transistor: Modified 1040Schottky Gate Contact for Enhanced Gate Transport EfficiencyAmit Sehgal, Tina Mangla, Sonia Chopra, Mridula Gupta and R. S. Gupta

184. Impact Ionisation Model for Kink Effect in Poly-Si TFTs 1045Navneet Gupta and B.P. Tyagi

185. On Occurrence of Random Variation in Series Resistance 1049of Elementary Diodes in Inhomogeneous Schottky ContactsSubhash Chand and Atul Kapil

186. Ultra-High Frequency Modeling of Carbon Nanotube Field-Effect 1055Transistors (CNT-FETs)Jose M. Marulanda, Ashok Srivastava and Rajendra K. Nahar

187. Modeling of Velocity-Field Characteristics in 1060Strained SiliconS. Dhar, G. Karlowatz, E. Ungersboeck, H. Kosina, and S. Selberherr

188. Analytical Model oi Strained-Si/SiGe/Si PMOSFET for 1064Circuit SimulationB. Bindu, Nandita Dasgupta and Amitava Dasgupta

189. Prospects of IR Material ZnS for High MM-Wave Power 1069Generation in Impatt ModeS.P. Pati, PR. Tripathy and R.K. Mishra

190. Surface Trapping in Small Area Devices and Low-Frequency 1073Noise in Submicron MOSFETSK.K.Ghosh

191. Process-Induced Strain Engineering Beyond 90 nm 1077Technology NodeA. R. Saha, S. S. Mahato and C. K. Maiti

192. Temperature Dependence of Compact Alpha Power 1082MOSFET Model ParametersA.B. Bhattacharyya, Gajanan Dessai, Chumki Saha,Sandeep Sharma, Amit Singh and D. N. Singh

XVI

193. Silicon Carbide Vertical JFET Operated in Bipolar 1086Mode (BMFET) - A Two-Dimensional Simulation Stud>M. Jagadesh Kumar and Amit Ojha

194. Exact Numerical Analysis of an Extracted IR-Photodiodes 1090M. Karimi, A. Asgari and M. Kalafi

195. A New Method to Model Carrier Diffusion and Surface 1094Recombination in VCSELsManmohan Singh Shishodia, G.B.Reddy and Anurag Sharma

196. A New Kink-Free High Voltage Vertical Submicron 1099N+PN BJT on SOI with Three-Zone Step DopedLateral Collector (VSLC)S. D. Roy and M. Jagadesh Kumar

197. Novel Attributes of Nanoscale Grooved Double Gate (GDG) 1104SOI MOSFET: Two Dimensional Simulation StudyM. Jagadesh Kumar and Poornima Agarwal

198. SiGe S ALTran: A Superbeta Bipolar Transistor 1108M. Jagadesh Kumar and Preeti Singh

199. Simulation of Quantum Effects in Nanoscale Double 1111Gate MOSFETs with 2D ElectrostaticsD. Datta, S. Ganguly, A.A. P. Sarab and S.Dasgupta

200. A Novel Dual Material Surrounding Gate (DMSG) 1116Nanoscale MOSFETHarshit Dhakad and M. Jagadesh Kumar

201. Compact Modeling of Parasitic Internal Fringe Capacitance 1121and its Effect on the Threshold Voltage of High-K GateDielectric SOI MOSFETsVivek Venkataraman, Sumeet Kumar Gupta and M. Jagadesh Kumar

202. Performance Considerations of a Novel MOSFET 1125Architecture: Symmetrical Double Gate with ElectricallyInduced Source/DrainAH A. Orouji and M. Jagadesh Kumar

XVII

203. Investigation of Latch-up Failure of CMOS RS232 1131Transceivers in Telecommunication Systems - A Case StudyV.Lakshminarayanan

204. A New Thin-Film High Voltage Lateral Schottky Collector 1136BJT on SOIS. D. Roy and M. Jagadesh Kumar

205. Enhanced Breakdown Voltage and Reduced Self-Heating 1141Effect in Thin-Film Lateral Bipolar Transistor on SOI

S. D. Roy and M. Jagadesh Kumar

.206. A Novel CMOS Compatible LDMOS Based On (FLI) and 1145(ODBR) MOSFET Concept

Rakesh Vaid and Naresh Padha

207. An Analytical Two-Dimensional Model for Graded Channel 1150Fully Depleted Cylindrical/Surrounding Gate Soi MOSFETs

Harsupreet Kaur, Sneha Kabra, Simrata Bindra, Subhasis Haldar and R.S.Gupta

208. Technology CAD of Si Schottky-Barrier MOSFETs 1155

A. R. Saha, S. S. Mahato and C. K. Maiti

209. Modeling of the Electroluminance Behavior of Blue 1159Emitting SrS: Ce ACTFEL Devices with Multiple

Interface Energy States

IS. Dhillon and V.P Singh

210. Investigating the Role oi Stacked Gate Oxide and 1163Hetro-Material Gate on Electrical Characteristics of Insulated

Shallow Extension (ISE) MOSFET

Ravneet Kaur, Manoj Saxena, R. S. Gupta

Section H: Growth and Characterisation

Invited Papers •211. Quantitative Evaluation of the Interface Trap Density in 1171

Nanometer-Thick SiGe/Si Heterostructures by Low-TemperatureCharge Pumping Technique

Toshiaki Tsuchiya, Masao Sakuraba and Junichi Murota

XVIII

212. Micro-Raman Analysis of ION Implanted and Plasma 1176Hydrogenated Czochralski Silicon WafersR. Job, Y. Ma, W. Dungen, Y. L. Huang and J. T. Horstmann

213. Performance of Crystals; Operational Characteristics of 1184Mercurous Bromide Crystals for Acousto-Optic ApplicationsD. J. Knuteson, N. B. Singh, N. Gupta , M. Gottlieb, D. Suhre,A. Berghmans, D. Kahler, B. Wagner, C. Lears and J. J. Hawkins

214. Catalytic Applications of Hydrogen in Silicon Processing 1189

Aniruddha A. Vengurlekar and S. Ashok

215. Characterization of Silicon-on-Insulator and SiC Wafers by the 1197Microwave Reflectance Photoconductivity Decay ((i-PCD)Method with UV ExcitationMasaya Ichimura and Masashi Kato

216. Thermophysical Properties of Various Transparent Conductive 1204Oxide Films Obtained by Thermoreflectance TechniqueTakashi Yagi, Kimiaki Tamano, Naoyuki Taketoshi,Tetsuya Baba and Yuzo Shigesato

217. MOVPE Growth of Nanostructures Based on 1208InAs and InGaPT. K. Sharma, S. D. Singh, S. Porwal and C. Mukherjee

218. Gd-Doped GaN: A Promising Material for 1217All-Semiconductor SpintronicsS. Dhar, L. Perez, O. Brandt and K. H. Ploog

219. Preparation and Characterisation of Thin Film 1225Nano-Crystalline SiliconP. N. Dixit, Sushil Kumar, C. M. S. Rauthan, M. Dilshad and S. S. Rajput

220. Single-Photon and Correlated-Photon-Pair Generations 1234Based on Semiconductor Quantum Dots for QuantumInformation DevicesHidekazu Kumano, Satoshi Kimura, Michiaki Endo and Ikuo Suemune

221. Recent Progress in Growth and Devices Based on Zinc 1244Oxide NanostructuresM. Willander, S. M. Al-Hilli, Q. X. Zhao, Q.-H. Hu, O. Nur and P. Klason

XIX

222. PVT Growth at High Temperature: Wide Bandgap 1253SemiconductorsN. B. Singh, B. Wagner, M. Sherwin, A. Berghmans, D. Thomson,D. Kahler, D. Knuteson, C. Lears and J. J. Hawkins

223. Optical Beam Induced Current Microscopy at 1260Radio FrequencyFu-Jen Kao

224. Preparation and Characterisation of Thin Film 1270Nano-Crystalline SiliconP.N. Dixit, Sushil Kumar, C.M.S. Rauthan, M. Dilshad and S.S. Rajput

225. Comprehensive Study of the Mechanism of Metal Induced 1279Crystallisation of Hydrogenated Amorphous Silicon Thin FilmsHameedA. Naseem, Husam H. Abu-Safe, Khalil Sharif,Marwan A. Albarghouti, MarufHossain, William D. Brown and Ram Kishore

226. Structural Studies of Sr O75Ba 0 75Nb03 as a Function of Low 1287Temperature and Applied Electric FieldSyedB. Qadri, Jeffrey A. Bellotti, Anthony Garzarella and Dong Ho Wu

Contributed Papers227. High Energy Heavy Ion Induced Cobalt Silicide Formation 1297

as a Buried Layer in Silicon6. R. Chakraborty S.K. Haider, N. Karar, D. Kabiraj and D.K. Avasthi

228. Capacitance-Voltage Characterisation of Mixed Oxides 1302R. Das, S. Chakraborty, M. K. Bera and C. K. Maiti

229. Capacitance Reconstruction and Charge Trapping 1306Characteristics of Ultrathin High-k TO, Gate DielectricsDeposited on Strained-Si/Si(lx Ge02 SubstratesM. K. Bera, S. Chakraborty R. Das, S. Saha,S. Bhattacharya and C. K. Maiti

2-30. Growth and Characterisation of Manganese Doped Gallium 1310Nitride as a Useful Dilute Magnetic SemiconductorV. Suresh Kumar and J. Kumar

XX

231. Improvements in Optical Performance of Red-Emitting 1314(Ca,Zn)TiO,:Pi3+ Long Decay PhosphorA. F. Khan, D. Haranath, Harish Chander and Pooja Sharma

232. Characterisation of Charge Carriers in Polyaniline Doped 1318With Organic and Inorganic Acids by EPR SpectroscopyS.K. Gupta, S.K. Dhawan1, Manju Arora and Sunil Arya

233. Ftir Spectroscopic Characterisation of HCL and 1322P -Toluene Sulphonic Acid Doped PolyanilineS.K. Gupta, S.K. Dhawan, Manju Arora, D. Gupta and Sunil Arya

234. Vibrational Characteristics of a Few Rare 1326Earth SesquioxidesShaliniMehrotra, P.K Sharma, Nita Dilawar, Mahesh Kumar,S.M Shivaprasad, S.K Haider, B.V Kumaraswamy and A.K Bandyopadhyay

235. High Pressure Raman Investigation of SM,O, 1331P.K. Sharma, Shalini Mehrotra, Nita Dilawar, Mahesh Kumar,S.M Shivaprasad, S.K Haider, B.V Kumaraswamy and A.K Bandyopadhyay

236. Growth and Characterisation of 8-Hydroxyquinoline 1336Single Crystal: A Nonlinear Optical MaterialN.Vijayan, G. Bhagavannarayana, K.K.Maurya, S.N.Datta and Suranjan Pal

237. Development of ZnO MOCVD System and Growth of Oriented 1340ZnO Thin FilmsTapas Ganguli, Srinivas Daulatabad, Sanjay Porwal,T.K Sharma. Ravi Kumar and V.K. Dixit

238. Electronic Properties of Cubic Boron Nitride Films Grown by 1344Dual Frequency (Microwave/RF) Pecvd TechniqueC.M.S. Rauthan, A. Parashar, Sushil Kumar, S.K. Singhal, P.N. Dixit,B.P. Singh and R. Bhattacharyya

239. Langmuir Probe Studies of the Filtered Cathodic Vacuum 1348Arc Process for the Deposition of FetrahedralAmorphous Carbon FilmsMohd. Alim Khan, O. S. Panwar, P. N. Dixit. R. Bhattacharyya,B. S. Satyanarayana and M. Y. Khan

XXI

240. Optimisation of the MOVPE Growth of Gap Epitaxial Layers 1353on Gap ( l l l )B SubstratesT. K. Sharma, V. K. Dixit, Tapas Ganguli, S. D. Singh, S. Porwal and R. Kumar

241. Morphological Studies of CBN Films Grown by Dual Frequency 1358(Microwave/ RF) PECVD TechniqueA. Parashar, Sushil Kumar, C.M.S. Rauthan, S.K. Singhal, P.N. Dixit,B.P. Singh and R. Bhattacharyya

242. Structural Studies on Thick Ge-Rich SiGe Layers 1362S. Chakraborty, M.K. Bera, S. Bhattacharya, P.K. Bose, J.F. Woitok,and C.K. Maiti

243. Determination of Interface Trap Charges in 1366Al/ZrO2/Sige MOS CapacitorsS. Chakraborty M. K. Bera, S. Bhattacharya, P. K. Bose and C. K. Maiti

244. Interface Properties of Titanium Dioxide 1370Films on Ge-Rich SiGe LayersS. Chakraborty, M. K. Bera, S. Bhattacharya, P. K. Bose and C. K. Maiti

245. A Comparative Study on the Charge Trapping/Dotrapping 1374Characteristics under Constant Voltage Stressing ofHigh-KGate Dielectrics on Strained-Si/SiGeM. K. Bera, S. Chakraborty, R. Das, S. Saha, S. Bhattacharya and C. K. Maiti

246. Growth and Characterisation of Hippuric Acid Single Crystal: 1378Organic NLO MaterialN. Vijayan, G. Bhagavannarayana, K. K. Maurya, R. Gopalakrishnan,and P. Ramasamy

247. Comparative Study of Furnace and Rapid Thermal Annealing 1382on Electrical Properties of RF Sputtered A1N FilmsJ. P. Kar, G. Bose, S. Tuli, and S. P. Behera

248. Growth and Morphology of A1N Films on Si, 1386GaAs and InP SubstratesJ. P. Kar, S. K. Mohanta, G. Bose and S. Tuli

249. MOS C-V Characterisation of Ultra Thin (< 2 nm) Gate Oxides 1390R. Das, M. K. Bera, S. Chakraborty, A. R. Saha, S. Saha and C. K Maiti

XXII

250. Enhancement of Crystalline, Piezoelectric and Optical Quality 1394of Linbo3 Single Crystals by Post-Growth Annealing and PolingG. Bhagavannarayana, G.C. Budakoti, K.K. Maurya and B. Kumar

251. Structural, Optical and Electrical Characterisation of Epitaxial 1398Gallium Phospide Layer Grown on n-Type Si (001) Substrateusing Metal Organic Vapour Phase EpitaxyV. K. Dixit, Tapas Ganguli, T. K. Sharma, Vijay Shukla, Ravi Kumar,S. Porwal and Alka Ingale

252. Review on ZnO Thin Film Applicable for 1403Optoelectronic DevicesAbdullah Nurus Saqlaen. Mohammad Khayrul Alam and Zahirul Hoque Mazumder

253. RF- Sputtered Thin Films of ZnO and Their Characterisation 1408Harish Bahadur, S.C. Garg, S.S. Samanta, A.Basu, M. Kar,Rashmi, K.N. Sood, Ram Kishore, D. Haranath, Harish Chander,Vivekanand Bhatt, Prem Pal and Sudhir Chandra

254. Strained Growth of Sb on Trenched Si (5 5 12) Surface 1411and its Strain Relaxation ModesMahesh Kumar, Vinod Kumar Paliwal, Govind, A.G. Vedeshwarand S. M. Shivaprasad

255. Comprehensie Study of the Mechanism of Metal Induced 1416Crystallistion of Hydrogenated Amorphous Silicon Thin FilmsHameed A. Naseem, Husam H. Abu-Safe, Khali! Sharif,Marwan A. Albarghouti, MarufHossain, William D. Brown and Ram Kishore

256. Construction of Low Temperature and High Pulsed Magnetic 1423Field System for Magnetotransport CharacterisationMurthy O. V. S. N. and V. Venkataraman

257. CdSe, Je^Thin Film Electrode: Photoelectrochemical Solar Cells 1427PD.More and V B. Patil

258. Chemically Deposited (Microprocessor Based) Zinc Selenide 1432Thin Films: Micro-Structural StudiesD. S. Sutrave , P. A. Lohar and V. B. Patil

XXIII

259. Electro-Optical Characterization of y-Na(i 7,Co()%O2 PowderSynthesised By Chemical Route

D. Panda, S. Jana and K.K. Chattopadhyay

260. Preparation and Characterisation of Chemically DepositedMixed [(Bil!t,Sbx)2s3] Thin Films

A.R. Patil, D.N.Chape, V.A.Patil1, C.M.Mahajan.Yoon and SeokJin

261. Chemical Compositional Analysis of Semiconducting BismuthSelenotelluride Thin Films

A.R. Patil, D.N.Chape, V.A.Patil, C.M.Mahajanand Yoon SeokJin

262. Differential Scanning Calorimetry Study of SeUX) xBix Glasses

M. A. Majeed Khan, M. Zulfequar, Karunapati Tripathi,Sushil Kumar and M. Husain

263. Dielectric Properties of Se-S Glassy Alloys

Nadeem Musahwar, M. Zulfequar and M. Husain

264. Dielectric Relaxation Studies in a-Se-Te-Ga System

i Satish Kumar, M. Husain and M. Zulfequar

265. Effect of Transition Metal Ion Doping on the Electrical,' Optical and Magnetic Properties of ZnO

Shubra Singh, N. Rama and M.S. Ramachandra Rao

266. Relationship Between Electrical and Ionic Properties ofSputtered CNx Films

Toshifumi Satoh, Hiroyuki Tango, Genki Sago, Shigemi Kohiki,Keisuke Goto and Yo Ichikawa

267. "EL2" Revisited: Observation of Mctastable Levels ofEL2 in Semi-Insulating GaAs

0. Kabiraj and Subhasis Ghosh

268. Band Gap Shrinkage Due to Many Body Effects in GaN

Niladri Sarkar and Subhasis Ghosh

269. Surface Photo Voltage Characterisation of GaAs/AlGaAsSingle Quantum Well Laser Structures Grown byMolecular Beam Epitaxy

1436

1441

1445

1449

1453

1457

1461

1464

1467

1471

1475

V. Ramesh, Puspashree Mishra, T. Srinivasan, S.N. Singh and R. Muraljdharan

XXIV

270. Molecular Beam Epitaxy Growth and Characterisation of 1479Metamorphic In0 ,2A1O 4SAs/In() .,Ga(J 4_As Heterostructures onGaAs SubstrateT. Srinivasan, P. Mishra, S. N. Singh, R. K. Sharma and R. Muralidharan

271. Fabrication of A-SI:H and NC-SI:H TFTS Using DLC as Dielectric 1483Sushil Kumar, Jhuma Gope, C.M.S. Rauthan and P.N. Dixit

272. HRXRD and CBED Characterisation of Low Temperature 1487GaAs (LT-GaAs)Puspashree Mishra, T. Srinivasan, S.N.Singh, R.K, Sharma, R. Muralidharan.D. V. Sridhara Rao and K. Muraleedharan

273. Transmission Electron Microscopy of In Al As MeUunorphic 1492Buffer Layers Grown on GaAs SubstrateS. Bysakh, K. Muraleedharan, T. K. Nandy, R. Muralidharan and T. Srinivasan

214. I-V and Frequency Dependent C-V Spectroscopy of 1496Swift Heavy Ions Irradiated Pd/n-GaAs DevicesO.P.Sinha and PC. Srivastava

275. Active Species in SnO.,:Cu Surface for CO Detection Via 1502X-Ray Photoelectron SpectroscopeP. S. More, P. Madhu Kumar, A .B. Mandate, K.R. Patil, S.R. SainkarR. N. Karekar and R. C. Aiyer

276. Structural and Optical Characterisation of Dilute Nitride 1511Semiconductor HeterostructuresAbdul Kadir, Arnab Bhattacharya, M.R. Gokhale.Rajaram Bhat andB.M. Arora

211. Estimation of Defects in Hydrogenated Nanocrystalline Silicon 1515Films Using Constant Photocurrent MethodM. Dilshad, A. Bhardwaj, O.S. Panwar Sushil Kumar, C.M.S. Rauthan,S.S.Rajput and P.N. Dixit

278. A Technique for Estimation of Thermal Time Constant in 1519Power Semiconductor DevicesTulana Saha, Sushil K. Semwal, D.S. Rawal, Sanjiv Kumar and U.C. Ray

XXV

279. Detection of Highest Bandgap Alloy Composition Present in 1523h^Gaj xAs with Variation in Composition using SurfacePhotovoltage Spectroscopy

Suparna Pal, Tapas Ganguli, T. K. Sharma, S. Porwal, Ravi Kumar,Shailendra Kumar. M. R. Gokhale and B. M. Arora

280. Effect of Growth Parameters on the Optical Properties of 1527InGaAs/GaAs Quantum Wells Grown by MOVPE

Pratishtha Pandey, Rajesh K. Bag, R. Tyagi, T. Haldar, Mahavir Singh,Sunita Singh, Puspashree Mishra, T. Srinivasan and R. Muralidharan

281. Metal Induced Crystallisation of an Amorphous Silicon - 1531A Microstructural Pathway

A. K. Srivastava, K. N. Sood. R. Kishore and H. A. Naseem

282. Structural and Electrical Properties of Indium Tin Oxide (1TO) 1535Film on Flexible and Glass Substrates for the Fabrication of

Organic Light Emitting Devices

Vandana Singh, Arpit and Satyendra Kumar

283. Incorporation of Carbon Atoms in Si(0()l) 1540

Hanchul Kim. Wondong Kim, Geunseop Lee and Ja-Yong Koo

284. Synthesis of Microcrystalline Diamond Thin Films by 1544HFCVD Process

Suneet K. Arora, Sandeep Chhoker and V. D. Vankar

285. Phase Formation and Compositional Analysis oi~ PIZt 1548Thin Films Prepared by RF Magnetron Sputtering

Ravindra Singh, B.R. Chakraborty, Nahar Singh, Rashmi,Harish Bahadur, T.C. Goeland Sudhir Chandra

286. Analysis of Band Gap Tailoring in Moderately and Heavily 1552Doped n-ZnO Films

Anubha Jain, P. Sagar and R. M. Mehra

287. Raman and Morphological Studies of Boron Incorporated 1556Tetrahedral Amorphous Carbon Films Grown UsingFiltered Cathodic Vacuum ARC Process

O.S. Panwar, S.S. Satyanarayana, Mohd. Alim Khan, Ram Kishore,K.N.Sood, P.N. Dixit and M.Y. Khan

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288. Characterisation of BCN and S1CN Thin Films Grown on 1560Silicon Crystals by High-Resolution X-Ray Diffractometry andReflectometry TechniquesNiranjana Goswami, Manoj K. Bhuyan, Krishan Lai, Marina L. Kosinova andFA. Kuznetsov

289. A Comparative Study of CdTe, CdZnTe and the Assessment 1564of their Crystalline Quality by PhotoluminescenceGururaj A. Kulkarni, K.S.R. Koteswara Rao and R.K. Sharma

290. X-Ray Diffraction Studies on Hydrogenated CZT Substrates 1568S.Sitharaman, Anshu Goyal, Surendrapal, Madhukar Gautam, Brijbhushanand Nepal Saini

291. Electron Beam Radiation Effects on Electrical And Optical 1572Characteristics of Sb, Zn and Al Doped Tin Oxide FilmsJ.S. Bhat, K.I. Maddani, A.M. Karguppikar, B.G. Mulimani and S. Ganesh

292. Effect of ECR Plasma Exposure on Conductivity of CdTe Thin Film 1576Monika Aggarwal, Samina Khan, Zishan H. Khan, K. N. Tripathi,Z. H. Zaidi and M. Husain

293. IN-SITU Tern Investigations of Aluminum Induced 1580Crystallisation of Sputtered Amorphous SiliconR. Kishore, S. Hata, N. Kuwano, Y. Tomokiyc, H. A. Naseem andW.D. Brown

294. Electrochemical Deposition of PbSe Thin Films 1584Santosh Golia and M. Arora

295. Tern Investigation of Capping Layer Effect on Aluminum 1588Induced Crystallisation of Amorphous SiliconR.Kishore, A.S. Islam, S. Goeke, Husam Abu-Safe,H.A. Naseem and W.D. Brown

296. Nano-Modifications on the Surface of Si/V/Si Thin Films by 1594Swift Heavy Ion IrradiationDiva, K.N. Sood, A.K. Srivastava, and R. Kishore

297. Growth and Studies of In^MnSb/GaAs Epilayers by 1596Liquid Phase EpitaxyK.Ganesan, S.Mariyappan andH.L.Bhat

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Section I: Emerging Technologies

Invited Papers

298 Design and Development of Polymer-Based Microfluidic Channels 1605and Networks for Handling Nano Liter Solutions using SoftLithographic TechniquesS.C. Jain, V. Sharma, V.K. Tanwar and P.K. Singh

299 Fabrication of Micro-Patterned Surfaces with Contrasting Physical 1610and Chemical Properties for Selective Deposition of Biomoleculesfor Biological ApplicationsS.C. Jain, V. Sharma, V.K. Tanwar and P.K. Singh

Contributed Papers300 Effect of Boron Doping in Tetrahedral Amorphous Carbon Films 1617

Grown using Filtered Cathodic Vacuum Arc ProcessMohd. Alim Khan, O.S. Panwar, P.N. Dixit, S.S. Satyanarayana, M. Dilshad,A. Bhardwaj and M. Y. Khan

301 Study of Pure and Doped Tetrahedral Amorphous Carbon Films 1621Deposited using Filtered Cathodic Vacuum Arc ProcessO.S. Panwar, Mohd. Alim Khan, P.N. Dixit, S.S. Satyanarayana,R. Bhattacharyya and M. Husain

302 One Stop Solution for Measuring the Super-Gain of an Open 1626Loop Op-Amp by Oscillation Based TechniqueBijay Kumar Sharma

303 Fabrication of Quantum Islands for Single Electron Transistors 1637using Focused Ion Beam TechnologyP. Santosh Kumar Karre and Paul L. Bergstrom

304 Electron Field-Emission From as Grown and Nitrogen 1642Incorporated Tetrahedral Amorphous Carbon Films GrownUsing L Bend Pulsed Filtered Cathodic Vacuum Arc ProcessO.S. Panwar, N.L. Rupesinghe and G.A.J. Amaratunga

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305 Electron Field-Emission From Hydrogen Incorporated 1646Tetrahedral Amorphous Carbon Films Grown Using anS Bend Filtered Cathodic Vacuum Arc ProcessO.S. Panwar, Mohd. Alim Khan, B.S. Satyanarayana, P.N. Dixit,Sushil Kumar and M. Y. Khan

306 Hyperbolic Model to Study Laser Irradiated Effects on 1650Semiconductor Doped Glass MatrixAbhishek Verma, P.K. Pandey and P.K. Bhatnagar

307 Microwave Permittivity and Permeability of Barium 1654Hexaferrite-Polymer Nanocomposite Thick FilmsMukesh C. Dimri, Subhash C. Kashyap and D.C. Dube

308 Investigation of the Ferromagnetic Semiconducting Oxide 1658Co-ZnO as a Function of Cobalt DopingV.K. Sankaranarayanan, S.N. Sharma, M. Kar and S.T. Lakshmikumar

Late Arrivals

309 Realisation of Quantum Dot (QD) Boolean Logic Gate for 1665Image Processing ApplicationsM. Ray, S.S. Dan and C.K. Sarkar

310 Role of Surface in the Light Induced Degradation of Nanocrystalline 1670and Amorphous SiliconN.P. Mandal, Abhishek Kumar and S.C. Agarwal

311 Current-Voltage Characteristic of Dark and Illuminated 1674Polymer Solar CellsVikram Kumar

312 Structural and Optical Characterisation of Dilute Nitride 1677Semiconductor HeterostructuresAbdul Kadir, Arnab Bhattacharya, M.R. Gokhale,Rajaram Bhat and B.M. Arora

3 13 Dislocation Generation in Silicon by Thermal Stresses 1681Bhushan Sopori and Przemyslaw Rupnowski

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314 Prospects of IR Material ZnS for High MM-Wave Power 1690Generation in Inipatt ModeS.P. Pati, PR. Tripathy and R.K. Mishra

Author Index (Vol. II) 1695

Combined Author Index (Vols. I&II) 1701