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Physics of carbon nanotube electronic devices • M.P. Anantram and F.Leonard – Center for Nanotechnology, NASA Ames Research Center – Nanoscale Science and Technology Department, Sandia National Laboratories

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Page 1: Physics of carbon nanotube electronic devices M.P. Anantram and F.Leonard – Center for Nanotechnology, NASA Ames Research Center – Nanoscale Science and

Physics of carbon nanotube electronic devices

• M.P. Anantram and F.Leonard– Center for Nanotechnology, NASA Ames Research

Center– Nanoscale Science and Technology Department,

Sandia National Laboratories

Page 2: Physics of carbon nanotube electronic devices M.P. Anantram and F.Leonard – Center for Nanotechnology, NASA Ames Research Center – Nanoscale Science and
Page 3: Physics of carbon nanotube electronic devices M.P. Anantram and F.Leonard – Center for Nanotechnology, NASA Ames Research Center – Nanoscale Science and
Page 4: Physics of carbon nanotube electronic devices M.P. Anantram and F.Leonard – Center for Nanotechnology, NASA Ames Research Center – Nanoscale Science and
Page 5: Physics of carbon nanotube electronic devices M.P. Anantram and F.Leonard – Center for Nanotechnology, NASA Ames Research Center – Nanoscale Science and
Page 6: Physics of carbon nanotube electronic devices M.P. Anantram and F.Leonard – Center for Nanotechnology, NASA Ames Research Center – Nanoscale Science and
Page 7: Physics of carbon nanotube electronic devices M.P. Anantram and F.Leonard – Center for Nanotechnology, NASA Ames Research Center – Nanoscale Science and
Page 8: Physics of carbon nanotube electronic devices M.P. Anantram and F.Leonard – Center for Nanotechnology, NASA Ames Research Center – Nanoscale Science and
Page 9: Physics of carbon nanotube electronic devices M.P. Anantram and F.Leonard – Center for Nanotechnology, NASA Ames Research Center – Nanoscale Science and
Page 10: Physics of carbon nanotube electronic devices M.P. Anantram and F.Leonard – Center for Nanotechnology, NASA Ames Research Center – Nanoscale Science and
Page 11: Physics of carbon nanotube electronic devices M.P. Anantram and F.Leonard – Center for Nanotechnology, NASA Ames Research Center – Nanoscale Science and

Figure 2.4.2:Density of states per unit volume and energy for a 3-D semiconductor (blue curve), a 10 nm quantum well with infinite barriers (red curve) and a 10 nm by 10 nm quantum wire with infinite barriers (green curve). m*/m0 = 0.8. © B. Van Zeghbroeck, 2007

PEE

mES

1

2

1)( 0

PEEm

ES

20

2

2

2

1)(

20)(

m

ES

Text, 1-D, Equation D.11

Text, 2-D, Equation D.16

Text, 3-D, Equation D.19

Page 12: Physics of carbon nanotube electronic devices M.P. Anantram and F.Leonard – Center for Nanotechnology, NASA Ames Research Center – Nanoscale Science and
Page 13: Physics of carbon nanotube electronic devices M.P. Anantram and F.Leonard – Center for Nanotechnology, NASA Ames Research Center – Nanoscale Science and
Page 14: Physics of carbon nanotube electronic devices M.P. Anantram and F.Leonard – Center for Nanotechnology, NASA Ames Research Center – Nanoscale Science and
Page 15: Physics of carbon nanotube electronic devices M.P. Anantram and F.Leonard – Center for Nanotechnology, NASA Ames Research Center – Nanoscale Science and
Page 16: Physics of carbon nanotube electronic devices M.P. Anantram and F.Leonard – Center for Nanotechnology, NASA Ames Research Center – Nanoscale Science and