phase 2 tracker meeting 6/19/2014 ron lipton
DESCRIPTION
Bump Bond Studies Sensor wafers complete ROIC wafers at Cornell, UCD Needed 200 m^2 Wafer diameter 300 mm Wafer area 0.031415927 0.070685835 Fration utilized 0.7 number of wafers 9095 4042 Width 20 microns length 1627050 162.705 cm 32541000 Square microns thickness 1 micron area 0.0000002 cm^2 Al resistivity 2.65E-08 ohm-meter 2.65E-06 ohm cm resistor value 2.16E+03 Power watt 4.64E+01 volts Sensor wafers complete ROIC wafers at Cornell, UCD Heaters too resistive? Connection issue? R. LiptonTRANSCRIPT
Phase 2 Tracker Meeting 6/19/2014 Ron Lipton
Updates: First PS support mechanics meeting last week: Begin to
import CERN design files Start to look at cooling optimization for
barrel R. Lipton Bump Bond Studies Sensor wafers complete ROIC
wafers at Cornell, UCD
Needed 200 m^2 Wafer diameter 300 mm Wafer area Fration utilized
0.7 number of wafers 9095 4042 Width 20 microns length cm Square
microns thickness 1 micron area cm^2 Al resistivity 2.65E-08
ohm-meter 2.65E-06 ohm cm resistor value 2.16E+03 Power watt
4.64E+01 volts Sensor wafers complete ROIC wafers at Cornell, UCD
Heaters too resistive? Connection issue? R. Lipton Ziptronix /
licensed to Novati
Fermilab 3D-IC run Ziptronix / licensed to Novati Tezzaron / Novati
Difference between Cu-Cu thermocompression and Cu DBI wafer bonding
methods: Cu-Cu not reworkable, bonding established by fusing metal
pads, forgiving on surface planarity Cu DBI reworkable shortly
after bonding, bonding established by chemically fusing oxide
surfaces, must be ultra planar 3 CMS review, March 18-19, 2013 3D
Process Development The original cu-cu bonding techniquedeveloped
by Tezzaron had severalissues Aging of top copper Wafer
misalignment (Too) Aggressive design rules mm octagons on a 4 mm
pitch alignment between wafers must be better than 1 um The
DBI-oxide bonding process solved these problems. Misaligned Bond
Interface in Cu-Cu bonded wafer L M R L M R Cu-Cu DBI Alignment
Keys R. Lipton Interconnect array Ziptronix DBI bonding array Bump
bond pad 6 micron thick top silicon 4 micron pitch DBI Copper
pillars Sensor Integration Three tier devices
We then chip-to-wafer oxide bonded 3D chips to BNL sensors to form
integrated sensor/electronics assemblies parts received in March
This completes our initial 3D work with Tezzaron and Ziptronix
VIP(ILC), VICTR(CMS), and VIPIC(X-Ray) assemblies VIP VICTR VIP
VIPIC VIPIC R. Lipton R. Lipton Chip-to-Wafer bond DBI bonding of
ROICs (VICTR,VIPIC, VIP) to BNL sensor wafer R. Lipton Wafer with
bonded Chips
R. Lipton VIP 2-tier VIP chip 24 micron pitch pixels 192x192 34 m
sensor
R. Lipton DBI Interconnect VIPIC pixel Interconnect structure
Shield metal
Pad redistribution Alignment structures R. Lipton Mounted detectors
.5 mm sensor 34 micron 2-tier VICTR chip R. Lipton 3D-IC: Fermilab
designs VIPIC
1400 transistors / pixel 280 transistors / pixel Digital part of
pixel Analog part of pixel 64 64 array of 80 mm2; shaping time
tp=250 ns, power ~25 mW / analog pixel, noise