phase 2 tracker meeting 6/19/2014 ron lipton

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Bump Bond Studies Sensor wafers complete ROIC wafers at Cornell, UCD Needed 200 m^2 Wafer diameter 300 mm Wafer area 0.031415927 0.070685835 Fration utilized 0.7 number of wafers 9095 4042 Width 20 microns length 1627050 162.705 cm 32541000 Square microns thickness 1 micron area 0.0000002 cm^2 Al resistivity 2.65E-08 ohm-meter 2.65E-06 ohm cm resistor value 2.16E+03 Power watt 4.64E+01 volts Sensor wafers complete ROIC wafers at Cornell, UCD Heaters too resistive? Connection issue? R. Lipton

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Phase 2 Tracker Meeting 6/19/2014 Ron Lipton
Updates: First PS support mechanics meeting last week: Begin to import CERN design files Start to look at cooling optimization for barrel R. Lipton Bump Bond Studies Sensor wafers complete ROIC wafers at Cornell, UCD
Needed 200 m^2 Wafer diameter 300 mm Wafer area Fration utilized 0.7 number of wafers 9095 4042 Width 20 microns length cm Square microns thickness 1 micron area cm^2 Al resistivity 2.65E-08 ohm-meter 2.65E-06 ohm cm resistor value 2.16E+03 Power watt 4.64E+01 volts Sensor wafers complete ROIC wafers at Cornell, UCD Heaters too resistive? Connection issue? R. Lipton Ziptronix / licensed to Novati
Fermilab 3D-IC run Ziptronix / licensed to Novati Tezzaron / Novati Difference between Cu-Cu thermocompression and Cu DBI wafer bonding methods: Cu-Cu not reworkable, bonding established by fusing metal pads, forgiving on surface planarity Cu DBI reworkable shortly after bonding, bonding established by chemically fusing oxide surfaces, must be ultra planar 3 CMS review, March 18-19, 2013 3D Process Development The original cu-cu bonding techniquedeveloped by Tezzaron had severalissues Aging of top copper Wafer misalignment (Too) Aggressive design rules mm octagons on a 4 mm pitch alignment between wafers must be better than 1 um The DBI-oxide bonding process solved these problems. Misaligned Bond Interface in Cu-Cu bonded wafer L M R L M R Cu-Cu DBI Alignment Keys R. Lipton Interconnect array Ziptronix DBI bonding array Bump bond pad 6 micron thick top silicon 4 micron pitch DBI Copper pillars Sensor Integration Three tier devices
We then chip-to-wafer oxide bonded 3D chips to BNL sensors to form integrated sensor/electronics assemblies parts received in March This completes our initial 3D work with Tezzaron and Ziptronix VIP(ILC), VICTR(CMS), and VIPIC(X-Ray) assemblies VIP VICTR VIP VIPIC VIPIC R. Lipton R. Lipton Chip-to-Wafer bond DBI bonding of ROICs (VICTR,VIPIC, VIP) to BNL sensor wafer R. Lipton Wafer with bonded Chips
R. Lipton VIP 2-tier VIP chip 24 micron pitch pixels 192x192 34 m sensor
R. Lipton DBI Interconnect VIPIC pixel Interconnect structure Shield metal
Pad redistribution Alignment structures R. Lipton Mounted detectors .5 mm sensor 34 micron 2-tier VICTR chip R. Lipton 3D-IC: Fermilab designs VIPIC
1400 transistors / pixel 280 transistors / pixel Digital part of pixel Analog part of pixel 64 64 array of 80 mm2; shaping time tp=250 ns, power ~25 mW / analog pixel, noise