perspective on probe storage - university of exeter...bruno murari roadmap what we have done in st...
TRANSCRIPT
Perspective on Probe Storage
Agrate, 11th June ‘09
Bruno Murari
Roadmap
What we have done in ST on Probe Storage (1999-2007)
• ARS (Atomic Resolution Storage) Program with HP (1999-2003)– HP (Carly Fiorina) stopped the ARS project in 2003 for cost and
time to market issues
• Millipede1 Development Program with IBM (Sept 2003 – March 2005)– ST top management decision to close collaboration with IBM
• Nokia input for high density memory device: September 2005
• Resart ST-IBM Probe Storage/Millipede2 collaboration under Nokia pressure : December 2005
• Seagate-ST Probe Storage Co-development agreement: November 2006
• IBM-Seagate-STM meeting to decide the future : April 2007– Seagate, followed by ST, stopped the program in May 2007 related to
very aggressive roadmaps for NAND Flash technology/cost and revised market risk analysis.
HP Atomic Resolution Storage (ARS)
How to realize the ARS micromover
Feedthrough Spring
Rotor electrodes Stator electrodes
Rotor Stator
Bonded poly
Bonded Pd
Rotor electrodes Stator electrodes
100 um
Flat Emitter Concept
e- trajectoriesle
ns
anod
e
flat e
mitt
er
Electrostatic Scanning Motors
PlatformPlatform
FlexuresFlexures
IBM Millipede1 : sample of single Cantilever on SOI wafer
Single Lever Thermomechanical R/W Test BenchST first lot result : areal density 511Gbit/in2 (2004)
• 50nm pitch
• 35 nm pitch
IBM Single Lever Test Bench
Millipede1 : Micro-mover prototype
400 µm
Spring dimension: 10 umAspect ratio 1:40
Spring width : 10 umAspect ratio 40:1
6” Micromover prototype
flat media
Tip apex: 5±1.5 nm radiusTip angle: 25 degrees
Tip apex: 4.5±1.5 nm radiusTip angle: 41 degrees
Millipede2 : Density Scaling
Experimental results in excellent quantitative agreement with scaling predictions from 0.8 to 4 Tb/in^2 irrespective of tip cone angle
standard media
2Tb/in^2 8.5dbSDR
flat media
2Tb/in^2 9.3dbSDR
3Tb/in^2 10.2dbSDR
4Tb/in^2 6.3dbSDR
Tip wear (read)
Dry air + force modulation Dry air Ambient Humidity
Sliding Distance ~ 750m
Sliding Distance ~ 13mSliding Distance ~ 700malmost no wear
0 100 200 300 400 500 600 7000
2
4
6
8
10
Fadh
(nN
)
sliding distance (m)
STC12 STC20
Wear rate: STC20: 0.25nm3/m
STC12: 20 nm3/m
Radius: STC20: ~16nm
STC12: ~4.5nm
STC20 STC12Experimental Conditions:Contact sliding in Dry Air, 1.5mm/sHot NMP washed PEAK 42BRelative Humidity ~ 0%Sliding distance ~ 750m (7.5E10 read events)
Modulation of the "normal force" that acts between the surfaces in contact (tip and medium) at frequencies at or higher than theresonance frequencies of the two bodies, results in variation ofthe interaction energy and thereby reduces friction dramatically.
w/o modulation force
w/ modulation force
Towards Super-lubricity with Force-modulation
GST
Tip
Substrate
Molten GST
Chalcogenide Phase Change Material:Chalcogenide Phase Change Material:20 nm 20 nm pitch (1.6Tb/in2) electro(1.6Tb/in2) electro--thermal simulationthermal simulation
Temperature distributionTemperature distribution
Magnetic Ferroelectric
Magnetic Field detector
Electric Field detector
Magnetic Media vs Ferroelectric Media
H
M/m3
V
Q/m3
12- 50 MJ/m3
2- 5 MJ/m3
Perovskite Structure Tetragonal
Perovskite Structure Tetragonal
Si Substrate
SrRuO3 (SRO)SrTiO3 (STO)
Lube
PZT
Ferroelectric Media
• Deposition of media by MOCVD • Main issues :
– Media protection– lubrification technologies
Seagate architecture : ST proposal for Ferroelectric Cantilever
System & Packaging Concept
CMOS
Rotor+Stator8x8 mm
Probe Storage vs N FLASH Price $ / GByte
2009 20112010 20132012 2014 20152007
0.5
1
2
4$
0.25
0.122008
N_Flash Tech. Node : 45 nm 32 nm 22 nm 15 nm
Scenario 1
Scenario 2
Probe
Areal Density : 2.5Tb/sqinchCapacity on MMC Size: 64 GB
5Tb/sqinch128 GB
10Tb/sqinch256 GB
What we have learnt
• Through Silicon Vias • Deep silicon etch with high aspect ratio• Temporary bonding• Wafer to wafer bonding• Hermetic sealing on cavity• Floating metallization• Non conformal lithography• 3D integration• System design, including package
LAB on CHIP from Printer Cartridge ?A real example of Lateral thinking…
Buried Channels for disposable Print Head Chip in Inkjet
Cartridges
Buried Channels for miniaturized PCRin disposable Lab on Chip
ST MEMS Growth and 8” Fab
0
20
40
60
80
100
120
140
160
180
200
220
240
2005 2006 2007 20080.0%
1.0%
2.0%
3.0%
4.0%
5.0%
6.0%
7.0%
8.0%
9.0%
10.0%
MEMS Revenues MEMS Market Share
> 10x
> 3x
> 2x96M
209M
30M8” Fab in Milan
ST leads the “MEMS Consumerization Wave”
Next steps …
• The science has a discovery : mechanical position movement could be controlled with a 2A precision.We don’t know how to exploit it: the only idea up to now is to use for memory storage
• The “super lube” technology have to be exploited for different field applications.The tribology science has shown recently a strong improvement in C-drug reduction using ultrasonic vibration for mechanical part and fluidic system. How to use it ?
• The archive market is requiring a life improvement in memory storage up to more that 200 years .How to solve it ?
• The deep knowledge on nano-structured materials has an increasing impact on different devices.