peakforce - scanning microwave impedance microscopy · peakforce - scanning microwave impedance...
TRANSCRIPT
![Page 1: PeakForce - Scanning Microwave Impedance Microscopy · PeakForce - Scanning Microwave Impedance Microscopy Teddy Huang1 and Oskar Amster2 1Sr. Application Scientist, Bruker Nano Surfaces,](https://reader035.vdocuments.us/reader035/viewer/2022062414/5e4726792089ea22f234221b/html5/thumbnails/1.jpg)
PeakForce - Scanning Microwave Impedance Microscopy
Teddy Huang1 and Oskar Amster2
1Sr. Application Scientist, Bruker Nano Surfaces, [email protected]
2Director of Sales and Marketing, PrimeNano Inc, [email protected]
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PeakForce - Scanning Microwave Impedance Microscopy
Teddy Huang1 and Oskar Amster2
1Sr. Application Scientist, Bruker Nano Surfaces, [email protected]
2Director of Sales and Marketing, PrimeNano Inc, [email protected]
p-epi p-epi
n+ n+
n-LDD n-LDD
n-channel n-channel
p p p-epi
n+
n-LDD
n-channel
p
sMIM-C
Modulus
sMIM-R
Adhesion
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Outline
11/30/2015 3 Bruker
• Bruker nano-electrical measurements.
• PeakForce nano-electrical modes.
• Scanning Microwave Impedance Microscopy.
• Case studies:
Regular sMIM.
PeakForce sMIM.
• Summary.
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AFM Nano-electrical Measurements
11/30/2015 4 Bruker
Sample
Sample chuck
DC bias
Amplifier, filter and
gain stage
to A/D
AC bias
• Nano-electrical characterization: the probe and the
sample are parts of the electrical circuit.
• Bring macroscopic measurements to nanoscale.
• Bruker provides a versatile array of electrical
techniques for a multitude of applications.
Conductivity/Resistivity C-AFM, TUNA, SSRM
Electric Field EFM
Charge EFM, SCM
Surface Potential /
Work Function KPFM
Carrier Density SCM, SSRM
Piezoelectricity PFM
C-AFM: Conductive AFM
TUNA: Tunneling AFM
SSRM: Surface Spreading Resistance Microscopy
EFM: Electric Force Microscopy
KPFM: Kelvin Probe Force Microscopy
SCM: Scanning Capacitance Microscopy
PFM: Piezoelectric Force Microscopy
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Bruker Nano-electrical Measurements
11/30/2015 5 Bruker
SSRM, 1.2 x 0.6 um scan, cross-sectioned MOS transistors, log scale
KPFM, 2 x 1 um scan, potential map on InP nanowire with 3V electrical bias between contacts
SCM, 4 x 2 um scan, carrier diffusion of cross-sectioned double-diffused SiC MOSFET
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PeakForce Tapping (2009, Bruker)
11/30/2015 6 Bruker
• Probe is modulated at 1~2 kHz, allowing for imaging at high scan rate and high pixel resolution
• Feedback setpoint: maximum force or peak force of the tapping cycle.
• Sinusoidal ramping: direct force control of imaging forces with ultra-low setpoints (< 50 pN).
• Linear force control: automatic image optimization, ScanAsyst
• A triggered force curve at every tapping cycle: PeakForce QNM (Quantitative Nano Mechanics)
Adhesion Modulus Height
Brush polymer
2 nm
Sample courtesy: S. Sheiko, UNC, Chapel Hill
https://www.youtube.com/watch?v=wjguTT0rGXM
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• Mechanical & Electrical properties are measured simultaneously
• Impossible in contact mode, as forces are too high.
• Higher resolution vs. contact mode.
PeakForce-enabled Electrical Measurements
11/30/2015 7 Bruker
Electrical
Leclere et. al. Nanoscale, 2012, 4, 2705
Integration with PeakForce Tapping for inaccessible, delicate
samples and adds correlated nanomechanical data PeakForce-TUNA
PeakForce-SSRM
PeakForce-KPFM
Height Adhesion Current
700x700 nm scan size
• Improve tip lifetime with hard samples
• Decrease sample wear with soft samples
• Improve resolution due to sharper tips & less sample damage
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407 S California Ave, suite 5 Palo Alto, California 94306 Phone: +1 (650) 300-5115 Email: [email protected]
Oskar Amster
Introduction to Electrical Scanning Probe Microscopy Measurements Using
Microwave Impedance Microscopy
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Who is PrimeNano, Inc?
• Instrument company focused on imaging and metrology for research and industry
• Founded in 2010 in Palo Alto, CA
• Patented technology spun out of Stanford University Applied Physics Dept.
• ScanWaveTM is an electrical module integrated with Bruker’s Icon AFM.
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Probe the Nano Scale
STM
Atomic scale density of states
Conductive AFM
Spreading resistance
Electrostatic Force Microscope /Kelvin Probe Microscope
Work function / Capacitive Coupling
Scanning Gate Microscope
Current flow path
Scanning Capacitance Microscope
Doping level in semiconductor
Microwave
Microwave Impedance Microscope
Local (s, e) Probe of electrical properties
What is missing?
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What is sMIM? – A mode for AFM
• Direct measurement of electrical properties – Image local variation of e (permittivity) and s
(conductivity) – Measure carrier type and carrier concentration
for doped semiconducting samples
• Compatible with all materials – Images dielectrics, insulators, semiconductors &
metals
• Compatible with typical AFM imaging modes: – contact, tapping mode, and PeakForce Tapping
• Sub-surface sensitivity – Can image through ~100+ nm overlayers
11 11
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Why Microwaves?
• Optics (light) have poor contrast
Silicon (poor conductor, s = 0.0016)
Aluminum (good conductor, s = 3.5e7)
Sapphire (Al2O3, e ~ 9) Glass(SiO2, e ~ 4) sMIM of SiO2 in Si2N3
• Microwaves have high contrast
sMIM of Al dots on SiO2
High Contrast between metals and insulators
SiO2 SiO2
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Basic Theory (electrical model)
C = e*(A/d) R = (1/s)*(d/A)
How do do we get to this from Microwaves?
13
3. Relation of physical parameters (ε,σ) to lumped element model
4. Changes in ε and σ are seen as changes in
C & R respectively
2. Probe-sample impedance, Ztip, can be
expressed as a lumped element model.
1. Probe/sample interface has its own impedance Metal probe Oxide interface
Sample
(leaky capacitor) capacitor and
resistor in parallel
Z Z Z
Z Z Z
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Contrast Mechanism (How Does it Work?)
1. 3GHz Microwave is generated by the ScanWave electronics
Complex impedance is made up of 2 components:
Ztip = Z(Re) + Z(Im)
2. At the probe/sample interface there is a microwave reflection due to a variation in the system
impedance from 50 ohm.
Z(Re) Resistance Z(Im) Capacitance
ScanWave presents these two components as output signals from
the electronics, (sMIM-R and sMIM-C)
By interfacing with the scanning AFM we can synchronize the the output sMIM signals with the
topography and display two images representing the variation in permittivity and conductivity
Ztip
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Contrast Mechanism (How Does it Work?)
1. 3GHz Microwave is generated by the ScanWave electronics
2. At the probe/sample interface there is a microwave reflection due to a variation in the system
impedance from 50 ohm.
Image Reflection as tip scans.
Real reflection
x
MIM-Re MIM-Im
Imaginary reflection
y
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Shielded Cantilever Probe
(e,s) (e,s)
20 μm
Shielding is important to reduce stray coupling Low loss, low capacitance Sharp tip (~ 50 nm) Batch fabrication
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sMIM: Basic Operation
17
• 6 Channels of data available simultaneously with Topography • sMIM-C; sMIM-R • dC/dV Phase & Amplitude • dR/dV Phase & Amplitude
• sMIM-C; sMIM-R Non-contact imaging (dC/dZ; dR/dZ) • sMIM-C; sMIM-R with PeakForce Tapping
6 output channels
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Compatibility of Materials
Semiconductors
Silicon FinFETs
Semiconductor/Metallic
Tre
nch
gat
e
Gat
e o
xid
e la
yer
Emitter region
Gate contact
Emitter region
Common emitter/Source metal
Insulators/Dielectrics
Oxide buried under SiN
Compact disk
SiO2
SiO2
SiO2
SiO2
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Series of bulk insulator samples
• sMIM-C is proportional to ε (permittivity)
– Measure dielectric constant over wide range
sMIM-C proportional to Capacitance
C R C = e*(A/d)
Im(z)
Geometric term = probe tip & distance
0
0.2
0.4
0.6
0.8
1
1.2
1 10 100 1000
sMIM vs Dielectric Constant
Prox. Mod Results
System Model
Dielectric Constant
sMIM
Sig
nal
(V
)
19
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0.1
0.2
0.3
0.4
0.5
1E+15 1E+16 1E+17 1E+18 1E+19 1E+20
sMIM vs Doping Level
Acceptor Concentration (/cm3)
sMIM
Sig
nal
(V
)
sMIM-C proportional to Capacitance
IMEC staircase studies
• Linear response with log doping concentration
– Sensitivity from 1014 atoms-cm3 – to 1020 atoms-cm3
Metal
Oxide
Semiconductor
Depletion
layer Vgate
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ScanWave Electronics Capacitance Sensitivity
Measure Au dot on thickest oxide layer
Smallest Au area – 0.1fF
Sensitivity of 0.15af/mV (calculated)
Measured NIST Capacitance standard using ScanWave
sMIM Image
Line profile from capacitance standard
0.3aF RMS
Schematic of NIST C standard
• 4 different Au dot sizes
• 4 different SiO2 step sizes
• Resulting in 16 different Capacitors
21
.1fF
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ScanWave on Bruker ICON Instrument
PrimeNano bracket
Probe
interface
module
Microwave
Electronic
Module
• ScanWaveTM has easy integration with the Bruker instruments
• PrimeNano has made a custom probe interface module for the ICON
• Probe interface bracket uses same scanner placement and screw holes as the SCM electrical module
• PrimeNano probe interface module uses standard Bruker pins to secure to the scanner
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Case Studies: Contact sMIM
11/30/2015 23 Bruker
• Buried Structures.
• Cobalt Surface-Modified γ-Fe2O3.
• Inverted Gate Bipolar Transistor (IGBT).
• Static Radom Access Memories (SRAM).
• CMOS Image Sensor.
sMIM-C
SiO2
SiO2
SiO2
SiO2
sMIM-C sMIM-R
Phase overlays on height sensor
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Polished Si3N4 film, buried SiO2 patterned structures
11/30/2015 24 Bruker
• Surface was polished to eliminate residual
topographic features.
• SiO2 and Si3N4 are both insulating, no variation in
sMIM-R over the sample.
• Permittivity difference between SiO2 (ε = 3.9) and
Si3N4 (ε = 7.5), sMIM-C shows different capacitive
response. sMIM-R
SiO2 SiO2
sMIM-C SiO2
SiO2
sMIM is a near-field technique: long range sensitivity to local permittivity variation
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sMIM on SRAM Sample
11/30/2015 25 Bruker
sMIM-C sMIM dC/dV Amplitude sMIM dC/dV Phase Height Sensor
n+ n+
n-LDD n-LDD
n-channel n-channel
p p
n+
n-LDD
n-channel
p • Image variation of local permittivity.
• SCM modulates sample without
knowing the DC properties. Phase overlays on Height Sensor
)(
)(
Vdd
AVC
dep
Si
oxox
oxMOS
e
ee
• Capable of resolving semiconductor specification.
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sMIM on SRAM Sample
11/30/2015 26 Bruker Confidential
sMIM dC/dV Phase sMIM dC/dV Amplitude sMIM-C
Phase overlays on height sensor
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sMIM on SRAM Sample
11/30/2015 27 Bruker
Phase overlays on height sensor
• Sharp phase contrast on the
topographically featureless region.
• sMIM resolves transitions in carrier
type < 20 nm.
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sMIM on Vertical Insulated Gate Bipolar Transistor (IGBT)
11/30/2015 28 Bruker
• sMIM-C shows device structure.
• sMIM carrier profiling resolves electronic structures.
• sMIM provides a level of information that usually
requires both the SEM and SCM to provide the full level
of device structural detail.
sMIM dC/dV Amplitude sMIM dC/dV Phase
p
n
SEM capability N-Substrate
Poly
-Si
(p-type)
base
(n-
type)
Tren
ch gate
Gate
oxid
e laye
r
Emitter region
Gate contact
sMIM-C
1 um
1 um 1 um
p
n
n-Type
p-Type
Highly
Or
Un-
doped
Phase x Amplitude
1 um
This IGBT was prepared by ChipWorks
Substrate
Base
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sMIM on CMOS Image Sensor
11/30/2015 29 Bruker Confidential
N-type cathode
P-type implant
P-type pinning
• Small feature size
• Doping gradient on p-doped region
• Pinning layer thickness and spacing
0.7 um
1 um
0.8 um
P-type pinning
140 nm
~100 nm
sMIM dC/dV Phase
sMIM dC/dV Amplitude
~75 nm
sMIM-C Doping gradient
Doping gradient
This CMOS sensor was prepared by ChipWorks
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Cobalt Surface-Modified γ-Fe2O3
11/30/2015 30 Bruker
960 nm x 960 nm
1.Magnetic materials
2. Inhomogeneous conductivity
Height Sensor sMIM-C sMIM-R
PeakForce-TUNA MFM
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Cobalt Surface-Modified γ-Fe2O3
11/30/2015 Bruker 31
sMIM-R sMIM dR/dV Amplitude
sMIM-C sMIM dC/dV Amplitude sMIM dC/dV Phase
• Carrier profiling for
nanoparticle film.
• dC/dV shows phase
domains.
sMIM dR/dV Phase
• dR/dV shows phase
domains.
• Nonlinear dielectric
properties.
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Cobalt Surface-Modified γ-Fe2O3
11/30/2015 Bruker 32
sMIM-C
sMIM-R
sMIM dC/dV Phase
sMIM dR/dV Phase
sMIM dC/dV
Phase on Height
sensor
sMIM dR/dV
Phase on Height
sensor
• Sharp transition from one phase to another: ~ 10 nm.
• dC/dV and dR/dV do not necessarily have the same phase
distribution.
• Different electrical properties within one particle domain.
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Voltage Sweeping: sMIM-C vs Voltage (C-V characteristics). sMIM-R vs Voltage (R-V characteristics).
11/30/2015 Bruker 33
• Direct measurement of the DC signals allows for local CV and RV sweeping.
• Reversed phases expect reversed slopes, confirmed by CV and RV sweeping.
sMIM dC/dV Phase
Sample Bias (V)
-1.0 -0.5 0.0 0.5 1.0
sMIM
-C (
mV
)
-10
-5
0
5
10
1
2
1
2
sMIM dR/dV Phase
Sample Bias (V)
-1.0 -0.5 0.0 0.5 1.0sM
IM-R
(m
V)
-20
-10
0
10
1 3
1
3
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Case Studies: PeakForce-sMIM
11/30/2015 34 Bruker
1) First trace/retrace: cantilever tracks surface topography with
PeakForce tapping.
2) Cantilever ascends to Lift height.
3) Second trace/retrace: cantilever profiles topography while collecting
sMIM data.
Contact time
Force vs. time
sMIM vs. time
• Capture sMIM data averaged over a full tapping circle.
• Capture sMIM signal during contact time are measured
• Tip oscillates at 1kHz. Contact time is typically 20 – 200 µs
One-path measurement, similar to PeakForce TUNA
Two primary approaches to integrate PeakForce tapping with sMIM
Interleave scanning, similar to PeakForce-KPFM
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PeakForce-sMIM on Carbon Nanotube
11/30/2015 35 Bruker
• Convenient for delicate samples.
• Differentiation of CNTs with insulating, semiconducting,
and metallic properties .
• No need to make electrical contacts.
• Simultaneously mapping mechanical properties.
sMIM-R
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PeakForce-sMIM on IGBT
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N-Substrate
Poly-
Si
(p-type)
base
(n-type)
Common emitter/source
metal
• PeakForce Tapping eases the scanning on the rough region,
challenging for contact mode.
• PeakForce-sMIM increases tip lifetime.
• Higher resolution due to a sharper tip.
6 µm
Height Sensor
sMiM-C
Emitter
Base
Ga
te o
xid
e
Tre
nc
h g
ate
Common emitter/source metal
Topography from
contact-sMIM
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PeakForce-sMIM on SRAM
11/30/2015 37 Bruker
• PeakForce Tapping advantages.
• High data quality, no flattening on sMIM-C channel.
• Resolve detailed electronic variations on sMIM-C and dC/dV channels.
sMIM-C overlays on Height Sensor dC/dV Phase overlays on Height Sensor dC/dV Amplitude overlays on Height Sensor
sMiM-C
n-channel
n-LDD
p
n+
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PeakForce-sMIM on SRAM
11/30/2015 38 Bruker
sMIM dC/dV Phase
sMIM dC/dV Amplitude
sMIM-C
• High lateral resolution in the dC/dV phase image.
• The p-n junction is well defined.
• The depletion region edges are resolved even
below the probe tip radius.
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Summary
11/30/2015 39 Bruker Confidential
• Bruker AFMs are platforms for comprehensive electrical measurements, and PeakForce
Tapping extends the applications of these nano-electrical modes.
• sMIM is a powerful tool for direct measurement of material electric properties on various
materials with resolution in the 10’s of nm’s.
• The integration of sMIM with PeakForce Tapping expands electrical measurement to
otherwise inaccessible, delicate samples and adds correlated nanomechanical data.
n+
n-LDD
n-channel
p
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11/30/2015 40 Bruker
If you need Bruker AFM help:
Atomic Force Microscope Technical Support Group
Phone: +1 800-873-9750
E-mail: [email protected]
Website: www.bruker.com
Bruker Support: http://brukersupport.com/
Resources: www.nanoscaleworld.bruker-axs.com
Bruker Probes: www.brukerafmprobes.com
Expert Training: http://www.bruker.com/service/education-training/training-courses/afm-optical-training-courses.html
Teddy Huang, Ph.D.
Sr. Applications Scientist, Electricity and Electrochemistry
Bruker Surfaces Business
112 Robin Hill Road, Santa Barbara, CA 93117
Email: [email protected]
Tel: (805) 967-2700 x2431; Fax: (805) 967-7717
Thank you for your attention!
Oskar Amster
Director of Marketing
PrimeNano, Inc.
407 S. California, suite 5
Palo Alto, CA 94306
Tel: 650-300-5115; Fax: 650-300-5200
If you need PrimeNano sMIM help:
PrimeNano Technical Support
Phone:650-300-5115
E-mail: [email protected]
Website: www.primenanoinc.com
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Cross-section analysis
11/30/2015 Bruker 41
sMIM dC/dV Phase sMIM dR/dV Phase