pbss5160paps - nexperia 60 v, 1 a pnp/pnp low vcesat (biss) transistor 24 november 2014 product data...
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PBSS5160PAPS60 V, 1 A PNP/PNP low VCEsat (BISS) transistor24 November 2014 Product data sheet
1. General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plasticpackage with visible and solderable side pads.
2. Features and benefits• Very low collector-emitter saturation voltage VCEsat• High collector current capability IC and ICM• High collector current gain hFE at high IC• Reduced Printed-Circuit Board (PCB) requirements• Exposed heat sink for excellent thermal and electrical conductivity• High energy efficiency due to less heat generation• Suitable for Automatic Optical Inspection (AOI) of solder joints• AEC-Q101 qualified
3. Applications• Load switch• Battery-driven devices• Power management• Charging circuits• LED lighting• Power switches (e.g. motors, fans)
4. Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit
Per transistor
VCEO collector-emittervoltage
open base - - -60 V
IC collector current - - -1 A
ICM peak collector current single pulse; tp ≤ 1 ms - - -1.5 A
Per transistor
RCEsat collector-emittersaturation resistance
IC = -0.5 A; IB = -50 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
- - 360 mΩ
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS5160PAPS60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
PBSS5160PAPS All information provided in this document is subject to legal disclaimers.
Product data sheet 24 November 2014 2 / 19
5. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol
1 E1 emitter TR1
2 B1 base TR1
3 C2 collector TR2
4 E2 emitter TR2
5 B2 base TR2
6 C1 collector TR1
7 C1 collector TR1
8 C2 collector TR2
Transparent top view
7 8
6 5 4
1 2 3
DFN2020D-6 (SOT1118D)sym138
B1E1 C2
B2C1
TR1TR2
E2
6. Ordering informationTable 3. Ordering information
PackageType number
Name Description Version
PBSS5160PAPS DFN2020D-6 DFN2020D-6: plastic, thermally enhanced ultra thin and smalloutline package; no leads; 6 terminals; body 2 x 2 x 0.65 mm
SOT1118D
7. Limiting valuesTable 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit
Per transistor
VCBO collector-base voltage open emitter - -60 V
VCEO collector-emitter voltage open base - -60 V
VEBO emitter-base voltage open collector - -7 V
IC collector current - -1 A
ICM peak collector current single pulse; tp ≤ 1 ms - -1.5 A
IB base current - -0.3 A
IBM peak base current single pulse; tp ≤ 1 ms - -1 A
[1] - 370 mW
[2] - 570 mW
[3] - 530 mW
Ptot total power dissipation Tamb ≤ 25 °C
[4] - 700 mW
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS5160PAPS60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
PBSS5160PAPS All information provided in this document is subject to legal disclaimers.
Product data sheet 24 November 2014 3 / 19
Symbol Parameter Conditions Min Max Unit
[5] - 450 mW
[6] - 760 mW
[7] - 700 mW
[8] - 1450 mW
Per device
[1] - 510 mW
[2] - 780 mW
[3] - 730 mW
[4] - 960 mW
[5] - 620 mW
[6] - 1040 mW
[7] - 960 mW
Ptot total power dissipation Tamb ≤ 25 °C
[8] - 2000 mW
Tj junction temperature - 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
[1] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated and standard footprint.[2] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated, mounting pad for
collector 1 cm2.[3] Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated and standard footprint.[4] Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated, mounting pad for collector 1 cm2.[5] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated and standard footprint.[6] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated, mounting pad for
collector 1 cm2.[7] Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated and standard footprint.[8] Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated, mounting pad for collector 1 cm2.
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS5160PAPS60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
PBSS5160PAPS All information provided in this document is subject to legal disclaimers.
Product data sheet 24 November 2014 4 / 19
Tamb (°C)-75 17512525 75-25
006aad165
0.5
1.0
1.5
Ptot(W)
0
(1)
(2)(3) (4)(5)(6)(7)(8)
(1) 4-layer PCB 70 µm, mounting pad for collector 1 cm2
(2) FR4 PCB 70 µm, mounting pad for collector 1 cm2
(3) 4-layer PCB 70 µm, standard footprint
(4) 4-layer PCB 35 µm, mounting pad for collector 1 cm2
(5) FR4 PCB 35 µm, mounting pad for collector 1 cm2
(6) 4-layer PCB 35 µm, standard footprint(7) FR4 PCB 70 µm, standard footprint(8) FR4 PCB 35 µm, standard footprint
Fig. 1. Per transistor: power derating curves
8. Thermal characteristicsTable 5. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit
Per transistor
[1] - - 338 K/W
[2] - - 219 K/W
[3] - - 236 K/W
[4] - - 179 K/W
[5] - - 278 K/W
[6] - - 164 K/W
[7] - - 179 K/W
Rth(j-a) thermal resistancefrom junction toambient
in free air
[8] - - 86 K/W
Rth(j-sp) thermal resistancefrom junction to solderpoint
- - 30 K/W
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS5160PAPS60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
PBSS5160PAPS All information provided in this document is subject to legal disclaimers.
Product data sheet 24 November 2014 5 / 19
Symbol Parameter Conditions Min Typ Max Unit
Per device
[1] - - 245 K/W
[2] - - 160 K/W
[3] - - 171 K/W
[4] - - 130 K/W
[5] - - 202 K/W
[6] - - 120 K/W
[7] - - 130 K/W
Rth(j-a) thermal resistancefrom junction toambient
in free air
[8] - - 63 K/W
[1] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated and standard footprint.[2] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated, mounting pad for
collector 1 cm2.[3] Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated and standard footprint.[4] Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated, mounting pad for collector 1 cm2.[5] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated and standard footprint.[6] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated, mounting pad for
collector 1 cm2.[7] Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated and standard footprint.[8] Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated, mounting pad for collector 1 cm2.
006aad166
10-5 1010-210-4 10210-1tp (s)
10-3 1031
102
10
103
Zth(j-a)(K/W)
1
duty cycle = 1
0.750.5
0.33
0.2
0.1
0.05
0.020.01
0
FR4 PCB 35 µm, standard footprint
Fig. 2. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;typical values
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS5160PAPS60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
PBSS5160PAPS All information provided in this document is subject to legal disclaimers.
Product data sheet 24 November 2014 6 / 19
006aad167
10-5 1010-210-4 10210-1tp (s)
10-3 1031
102
10
103
Zth(j-a)(K/W)
1
duty cycle = 1
0.750.5
0.33
0.2
0.1
0.05
0.020.01
0
FR4 PCB 35 µm, mounting pad for collector 1 cm2
Fig. 3. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;typical values
006aad168
10-5 1010-210-4 10210-1tp (s)
10-3 1031
102
10
103
Zth(j-a)(K/W)
1
duty cycle = 1
0.750.5
0.330.2
0.1
0.05
0.020.01
0
4-layer PCB 35 µm, standard footprint
Fig. 4. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;typical values
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS5160PAPS60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
PBSS5160PAPS All information provided in this document is subject to legal disclaimers.
Product data sheet 24 November 2014 7 / 19
006aad169
10-5 1010-210-4 10210-1tp (s)
10-3 1031
102
10
103
Zth(j-a)(K/W)
1
duty cycle = 1
0.750.5
0.33
0.2
0.1
0.05
0.02
0.010
4-layer PCB 35 µm, mounting pad for collector 1 cm2
Fig. 5. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;typical values
006aac610
10- 5 1010- 210- 4 10210- 1tp (s)
10- 3 1031
102
10
103
Zth(j-a)(K/W)
10
duty cycle = 1
0.010.02
0.05
0.1
0.20.33
0.50.75
FR4 PCB 70 µm, standard footprint
Fig. 6. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;typical values
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS5160PAPS60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
PBSS5160PAPS All information provided in this document is subject to legal disclaimers.
Product data sheet 24 November 2014 8 / 19
006aac611
10- 5 1010- 210- 4 10210- 1tp (s)
10- 3 1031
102
10
103
Zth(j-a)(K/W)
10
duty cycle = 1
0.01
0.02
0.050.1
0.20.33
0.50.75
FR4 PCB 70 µm, mounting pad for collector 1 cm2
Fig. 7. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;typical values
006aad170
10-5 1010-210-4 10210-1tp (s)
10-3 1031
102
10
103
Zth(j-a)(K/W)
1
duty cycle = 1
0.750.5
0.330.2
0.10.05
0.02
0.010
4-layer PCB 70 µm, standard footprint
Fig. 8. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;typical values
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS5160PAPS60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
PBSS5160PAPS All information provided in this document is subject to legal disclaimers.
Product data sheet 24 November 2014 9 / 19
006aad171
10-5 1010-210-4 10210-1tp (s)
10-3 1031
10
102
Zth(j-a)(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.10.05
0.02 0.01
0
4-layer PCB 70 µm, mounting pad for collector 1 cm2
Fig. 9. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;typical values
9. CharacteristicsTable 6. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit
Per transistor
VCB = -48 V; IE = 0 A; Tamb = 25 °C - - -100 nAICBO collector-base cut-offcurrent VCB = -48 V; IE = 0 A; Tj = 150 °C - - -50 µA
IEBO emitter-base cut-offcurrent
VEB = -5 V; IC = 0 A; Tamb = 25 °C - - -100 nA
VCE = -2 V; IC = -100 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
170 245 -
VCE = -2 V; IC = -500 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
120 170 -
hFE DC current gain
VCE = -2 V; IC = -1 A; pulsed;tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
70 100 -
IC = -500 mA; IB = -50 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
- -125 -180 mV
IC = -1 A; IB = -50 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
- -390 -550 mV
VCEsat collector-emittersaturation voltage
IC = -1 A; IB = -100 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
- -240 -340 mV
RCEsat collector-emittersaturation resistance
IC = -0.5 A; IB = -50 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
- - 360 mΩ
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS5160PAPS60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
PBSS5160PAPS All information provided in this document is subject to legal disclaimers.
Product data sheet 24 November 2014 10 / 19
Symbol Parameter Conditions Min Typ Max Unit
IC = -500 mA; IB = -50 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
- - -1 V
IC = -1 A; IB = -50 mA; Tamb = 25 °C - - -1 V
VBEsat base-emitter saturationvoltage
IC = -1 A; IB = -100 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
- - -1.1 V
VBEon base-emitter turn-onvoltage
VCE = -2 V; IC = -0.5 A; pulsed;tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
- - -0.9 V
td delay time - 15 - ns
tr rise time - 40 - ns
ton turn-on time - 55 - ns
ts storage time - 95 - ns
tf fall time - 40 - ns
toff turn-off time
VCC = -10 V; IC = -0.5 A; IBon = -25 mA;IBoff = 25 mA; Tamb = 25 °C
- 135 - ns
fT transition frequency VCE = -10 V; IC = -50 mA; f = 100 MHz;Tamb = 25 °C
65 125 - MHz
Cc collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A;f = 1 MHz; Tamb = 25 °C
- 9.5 13 pF
006aad212
200
300
100
400
500hFE
0
IC (mA)-10-1 -104-103-1 -102-10
(1)
(2)
(3)
VCE = −2 V(1) Tamb = 100 °C(2) Tamb = 25 °C(3) Tamb = −55 °C
Fig. 10. DC current gain as a function of collectorcurrent; typical values
VCE (V)0 -5-4-2 -3-1
006aad213
-0.50
-0.75
-0.25
-1.00
-1.50IC(A)
0
IB = -20 mA -18 -16 -14
-2
-12
-10
-8
-6
-4
Tamb = 25 °C
Fig. 11. Collector current as a function of collector-emitter voltage; typical values
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS5160PAPS60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
PBSS5160PAPS All information provided in this document is subject to legal disclaimers.
Product data sheet 24 November 2014 11 / 19
006aad214
-0.4
-0.8
-1.2
VBE(V)
0
IC (mA)-10-1 -104-103-1 -102-10
(3)
(2)
(1)
VCE = −2 V(1) Tamb = −55 °C(2) Tamb = 25 °C(3) Tamb = 100 °C
Fig. 12. Base-emitter voltage as a function of collectorcurrent; typical values
006aad215
-0.6
-0.8
-0.4
-1.0
-1.2VBEsat
(V)
-0.2
IC (mA)-10-1 -104-103-1 -102-10
(1)
(2)
(3)
IC/IB = 20(1) Tamb = −55 °C(2) Tamb = 25 °C(3) Tamb = 100 °C
Fig. 13. Base-emitter saturation voltage as a function ofcollector current; typical values
006aad216
IC (mA)-10-1 -104-103-1 -102-10
-10-2
-10-1
-1
-10
VCEsat(V)
-10-3
(1)
(2)
(3)
IC/IB = 20(1) Tamb = 100 °C(2) Tamb = 25 °C(3) Tamb = −55 °C
Fig. 14. Collector-emitter saturation voltage as afunction of collector current; typical values
006aad217
IC (mA)-10-1 -104-103-1 -102-10
-10-2
-10-1
-1
-10
VCEsat(V)
-10-3
(1)
(2)
(3)
Tamb = 25 °C(1) IC/IB = 100(2) IC/IB = 50(3) IC/IB = 10
Fig. 15. Collector-emitter saturation voltage as afunction of collector current; typical values
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS5160PAPS60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
PBSS5160PAPS All information provided in this document is subject to legal disclaimers.
Product data sheet 24 November 2014 12 / 19
006aad218
IC (mA)-10-1 -104-103-1 -102-10
1
10
102
103
RCEsat(Ω)
10-1
(1)
(2)
(3)
IC/IB = 20(1) Tamb = 100 °C(2) Tamb = 25 °C(3) Tamb = −55 °C
Fig. 16. Collector-emitter saturation resistance as afunction of collector current; typical values
IC (mA)-10-1 -104-103-1 -102-10
006aad219
1
10-1
102
10
103
RCEsat(Ω)
10-2
(1)
(2)
(3)
Tamb = 25 °C(1) IC/IB = 100(2) IC/IB = 50(3) IC/IB= 10
Fig. 17. Collector-emitter saturation resistance as afunction of collector current; typical values
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS5160PAPS60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
PBSS5160PAPS All information provided in this document is subject to legal disclaimers.
Product data sheet 24 November 2014 13 / 19
10. Test information
006aaa266
- IBon (100 %)
- IB
input pulse(idealized waveform)
- IBoff
90 %
10 %
- IC (100 %)
- IC
tdton
90 %
10 %
tr
output pulse(idealized waveform)
t f
t
tstoff
Fig. 18. BISS transistor switching time definition
RC
R2
R1
DUT
mgd624
Vo
RB(probe)450 Ω
(probe)450 Ω
oscilloscope oscilloscope
VBB
VI
VCC
Fig. 19. Test circuit for switching times
10.1 Quality informationThis product has been qualified in accordance with the Automotive Electronics Council(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and issuitable for use in automotive applications.
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS5160PAPS60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
PBSS5160PAPS All information provided in this document is subject to legal disclaimers.
Product data sheet 24 November 2014 14 / 19
11. Package outline
ReferencesOutlineversion
Europeanprojection Issue date
IEC JEDEC JEITA
SOT1118D - - -
sot1118d_po
14-07-1614-10-16
Unit
mmmaxnommin
0.650.620.59
0.04 2.1 0.77 2.1 1.0 0.54 0.300.49 0.250.44 0.20
0.05
A
Dimensions (mm are the original dimensions)
Note1. Dimension A is including plating thickness.
DFN2020D-6: plastic, thermally enhanced ultra thin and small outline package; no leads;6 terminals; body 2 x 2 x 0.65 mm SOT1118D
A1 bp
0.352.0 0.67 2.0 0.90.301.9 0.57 1.9 0.80.25
D D1 E E1 e
0.65
e1 Lp v
0.1
y y1
0.05
0 1 2 mm
scale
pin 1index area
cut-off end ofnon-fuctional bonding wire
A BD
E
detail X
A1
A
E1(2x)
Lp(6x)
e1 e1
pin 1index area
D1(2x)
1 3
6 4
bp(6x)
BAv
X
C
yCy1
(8x)
solderable lead endprotrusion maximum 0.035 mm (6x)
e e
Fig. 20. Package outline DFN2020D-6 (SOT1118D)
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS5160PAPS60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
PBSS5160PAPS All information provided in this document is subject to legal disclaimers.
Product data sheet 24 November 2014 15 / 19
12. Soldering
0.33
SOT1118D
sot1118d_fr
solder lands
occupied area
solder resist
solder paste
Dimensions in mm
0.9 1 1.1
0.350.45 0.2
1.652.2
0.30.25 0.65
1.650.21
0.31
0.935
0.22
2.32.5
0.12
0.53 0.43
0.77
0.670.570.49
Fig. 21. Reflow soldering footprint for DFN2020D-6 (SOT1118D)
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS5160PAPS60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
PBSS5160PAPS All information provided in this document is subject to legal disclaimers.
Product data sheet 24 November 2014 16 / 19
13. Revision historyTable 7. Revision historyData sheet ID Release date Data sheet status Change notice Supersedes
PBSS5160PAPS v.1 20141124 Product data sheet - -
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS5160PAPS60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
PBSS5160PAPS All information provided in this document is subject to legal disclaimers.
Product data sheet 24 November 2014 17 / 19
14. Legal information
14.1 Data sheet statusDocumentstatus [1][2]
Productstatus [3]
Definition
Objective[short] datasheet
Development This document contains data fromthe objective specification for productdevelopment.
Preliminary[short] datasheet
Qualification This document contains data from thepreliminary specification.
Product[short] datasheet
Production This document contains the productspecification.
[1] Please consult the most recently issued document before initiating orcompleting a design.
[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case ofmultiple devices. The latest product status information is available onthe Internet at URL http://www.nexperia.com.
14.2 DefinitionsPreview — The document is a preview version only. The document is stillsubject to formal approval, which may result in modifications or additions.Nexperia does not give any representations or warranties as tothe accuracy or completeness of information included herein and shall haveno liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result inmodifications or additions. Nexperia does not give anyrepresentations or warranties as to the accuracy or completeness ofinformation included herein and shall have no liability for the consequencesof use of such information.
Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see therelevant full data sheet, which is available on request via the local Nexperiasales office. In case of any inconsistency or conflict with theshort data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Productdata sheet shall define the specification of the product as agreed betweenNexperia and its customer, unless Nexperia andcustomer have explicitly agreed otherwise in writing. In no event however,shall an agreement be valid in which the Nexperia productis deemed to offer functions and qualities beyond those described in theProduct data sheet.
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Right to make changes — Nexperia reserves the right tomake changes to information published in this document, including withoutlimitation specifications and product descriptions, at any time and withoutnotice. This document supersedes and replaces all information supplied priorto the publication hereof.
Suitability for use in automotive applications — This Nexperiaproduct has been qualified for use in automotiveapplications. Unless otherwise agreed in writing, the product is not designed,authorized or warranted to be suitable for use in life support, life-critical orsafety-critical systems or equipment, nor in applications where failure ormalfunction of a Nexperia product can reasonably be expectedto result in personal injury, death or severe property or environmentaldamage. Nexperia and its suppliers accept no liability forinclusion and/or use of Nexperia products in such equipment orapplications and therefore such inclusion and/or use is at the customer's ownrisk.
Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or modification.
Customers are responsible for the design and operation of theirapplications and products using Nexperia products, and Nexperiaaccepts no liability for any assistance with applications orcustomer product design. It is customer’s sole responsibility to determinewhether the Nexperia product is suitable and fit for thecustomer’s applications and products planned, as well as for the plannedapplication and use of customer’s third party customer(s). Customers shouldprovide appropriate design and operating safeguards to minimize the risksassociated with their applications and products.
Nexperia does not accept any liability related to any default,damage, costs or problem which is based on any weakness or defaultin the customer’s applications or products, or the application or use bycustomer’s third party customer(s). Customer is responsible for doing allnecessary testing for the customer’s applications and products using Nexperiaproducts in order to avoid a default of the applicationsand the products or of the application or use by customer’s third partycustomer(s). Nexperia does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.
Terms and conditions of commercial sale — Nexperiaproducts are sold subject to the general terms and conditions of commercialsale, as published at http://www.nexperia.com/profile/terms, unless otherwiseagreed in a valid written individual agreement. In case an individualagreement is concluded only the terms and conditions of the respectiveagreement shall apply. Nexperia hereby expressly objects toapplying the customer’s general terms and conditions with regard to thepurchase of Nexperia products by customer.
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS5160PAPS60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
PBSS5160PAPS All information provided in this document is subject to legal disclaimers.
Product data sheet 24 November 2014 18 / 19
No offer to sell or license — Nothing in this document may be interpretedor construed as an offer to sell products that is open for acceptance or thegrant, conveyance or implication of any license under any copyrights, patentsor other industrial or intellectual property rights.
Export control — This document as well as the item(s) described hereinmay be subject to export control regulations. Export might require a priorauthorization from competent authorities.
Translations — A non-English (translated) version of a document is forreference only. The English version shall prevail in case of any discrepancybetween the translated and English versions.
14.4 TrademarksNotice: All referenced brands, product names, service names andtrademarks are the property of their respective owners.
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS5160PAPS60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
PBSS5160PAPS All information provided in this document is subject to legal disclaimers.
Product data sheet 24 November 2014 19 / 19
15. Contents1 General description ............................................... 12 Features and benefits ............................................13 Applications ........................................................... 14 Quick reference data ............................................. 15 Pinning information ...............................................26 Ordering information .............................................27 Limiting values .......................................................28 Thermal characteristics .........................................49 Characteristics .......................................................910 Test information ................................................... 1310.1 Quality information ............................................. 1311 Package outline ................................................... 1412 Soldering .............................................................. 1513 Revision history ...................................................1614 Legal information .................................................1714.1 Data sheet status ............................................... 1714.2 Definitions ...........................................................1714.3 Disclaimers .........................................................1714.4 Trademarks ........................................................ 18
© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 24 November 2014