parallel computing—a route to complexity and reality in material simulations shiwu gao department...
TRANSCRIPT
Parallel Computing—a route to complexity and reality in material simulations
Shiwu Gao
Department of Applied Physics
Chalmers/Göteborg University
Parallel computing and materials simulations
Water-metal interface
Dynamics of electron excitation/transfer
BiomembraneAquaporin water channel in membraneK. Murata et al, Nature, 407, 599 (2002)
Macroscopic(meter, hour)
Mesoscopic
Kinetics
Energetics
Atomic
Electronic(Å, fs)
Bottom-up approach
Theoretical approach based on:
1) Fundamental laws of physics
2) Computer modeling and simulations
Density Functional Theory based simulations
2
22
)()(
)()()()(2
Fi
i
iiiXCCoulomb
n
nvnm
rr
rr
Solving the Kohn-Sham Equations for all electorns
Full-potential and pseudopotential methods -Ful-potential methods (FP-LAPW, FP-LMTO) accurate and slow
-Pseudo-potential methods (VASP, CPMD, PWSCF) fast but with uncertainty in pseudopotentials
Outline • Parallelization of WIEN package
FP-(L)APW method
• Applications - Hydrogen bonding by CH group
- Pressure melting of confined water films
WIEN97 (T. U. Vienna)
Typical timing (s)
H/Cu(100) p(3x3) 3+2+5layers 29 atoms
Potential
Eigenproblem
Density
Core Electron
Mixing in/out data
+ Accurate + Versatile -- Slow-- larger RAM
Timing in LAPW1
0
10
20
30
40
50
60
70
80
90
H S Hns Solver
Exact
Iterative
- Large memory needed for H,S
RAM ~ M2
- Time-consuming
H |Ψk>= εkS |Ψk> t ~ M3
For large systems (>30 atoms)
- more than 90 % CPU time
- severval GB RAM
Parallelizing the eigenproblem (LAPW1)
2. Parallelizing the eigensolver
-Incorporating PQR
-Writting an iterative parallel solver
Myid = 0 1 2 3 0 1 2 3 0
1. Distributing and parallel setting H and S
PQR:X.B. Chi, Inst. Software, Chinese Academy of Sciences,Beijing
Further Parallelizations
+ LAPW1 Distributing H S setting and parallelizing the eigensolver -Incorporating PQR
-Writting an iterative parallel solver
+ LAPW2 and LAPW0
Distributing the calculation atom-wise
+ Implemeting the new APW+lo basis, E. Sjöstedt, Nordström, and Singh, Solid State Commun 114, 15 (2001)
S. Gao, Comput. Phys. Commun. (to be published)
Test example: C2H4+O2/Ag(110) coadsorption
- 100 surface atoms -Ag(110) 3x4x7=84
-(C2H4+o2)x2=16
- 6 layer vacuum- 21x23x35 au3
- Dual basis -Ag(110) LAPW -molecules, APW+lo
- 1-k point- 9 Ry cut-off structure- 13 -16 Ry in energy- 12 min/SCF 24 SGI3k- 12-15 Ionic steps/day
Scaling on Seth---Linux cluster at HPC2N
Up to 128 CPUs
Seth and SP3: 1) comparable scaling, 2) different in speed
Summary on scaling and performance
Timing consuming parts Acceleration on p CPUs
Setting H and S 0.98—1.0 p
HNS 0.79—0.9 p
Eigensolver--PQR 0.91–-0.94 p
Iterative Diag. 0.7— 0.8 p
Charge (LAPW2) ~ Na (or no acc.)
Potential (LAPW0) ~ Na (or no acc.)
Applicable to large systems, as PW-PP methods
Hydrogen bonding by CH group C2H4+O2/Ag(110)
Expt: J. R. Hahn, W. Ho, UCITheory: S. W. Gao, Chalmers
Why hydrogen bond with CH group
• H-bond is ubiquetous in biomolecules and organics
• Also of interest for fundamental studies (Ionic, covelency, vdW?)
• Usually with FH (VII), OH (VI), and NH(V) due to the large affinity, favoring ionic coupling
• H-bond with CH, weak—controversial EHB < 1 kcal/mol (c.a. 43 meV)
Distance-dependent interaction
-27.4 meV
-90.4 meV
-6.6 meV
In the gas phase: the interaction is negligible ~ + 10 meV
Background and Motivation
• Special phenomena in confined water• Bio-membrane fusion: role of thin water films• Pressure:
-phase control-material synthesis-mechanical stimuli in biology
• Ice-skating and lubrication• How to characterize confined liquid water from computer simulations
• New water phases in confined water
• Existence of solid-liquid critical points
K.Koga et al.,Nature 412, 802 (2001)
Simulation Method
• VASP—Veinna ab intio simulation package (better adapted to MD simulations)
.• Slab representation in a supercell
geometry: up to 48 Pt atoms and 32 H2O molecules
Summary
• Parallel WIEN for large-scale ab initio electron structure calculations
• Applications in material simulations1. Hydrogen bonding mechanism induced by
adsorption 2. Pressure induced phase transitions of water
films