P4004EDP-Channel Enhancement Mode MOSFET

PRODUCT SUMMARYV(BR)DSS

TO-252(DPAK)

ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)

THERMAL RESISTANCE RATINGS

UNITS

1Pulse width limited by maximum junction temperature.

2Limited only by maximum temperature allowed

MAXIMUM

Avalanche Current

Junction-to-Case 4.1

40C / W

RJA

IAS

EAS

Junction-to-Ambient

Operating Junction & Storage Temperature Range

SYMBOL

PD

TJ, TSTG

VDS

TYPICAL

Avalanche Energy L = 0.1mH

Pulsed Drain Current1 , 2

36

-21

20

30Power Dissipation

RDS(ON)

40m @VGS = -10V

TC = 70 C

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

Gate-Source Voltage

ID

- 21A

SYMBOL

TA = 25 C

TA = 70 C

VGSV

A

C

ID

IDM

-40V

UNITS

-70

-17

-21

20

Continuous Drain Current2

TC = 25 C

-40

LIMITS

-55 to 150

mJ

W

THERMAL RESISTANCE

RJC

Ver 1.0 1 2010/4/28

P4004EDP-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 C, Unless Otherwise Noted)

MIN TYP MAX

-40

-2 -2.5 -3

250 nA

1

10

-70 A

65 73

35 50

30 40

20 S

1090

175

91

4.95

17

5.5

3

6

16

26

10

-21 A

-1.2 V

15.5 nS

7.9 nC1Pulse test : Pulse Width 300 sec, Duty Cycle 2.

2Independent of operating temperature.

m

On-State Drain Current1 ID(ON) VDS = -5V, VGS = -10V

Drain-Source On-State

Resistance1

VGS = -5V, ID = -8A

VGS = -10V, ID = -10A

RDS(ON) VGS = -7V, ID = -8A

Forward Voltage1 VSD IF = -10A, VGS = 0V

Reverse Recovery Time trrIF = -10 A, dlF/dt = 100A / S

Reverse Recovery Charge Qrr

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 C)

Continuous Current IS

Turn-On Delay Time2 td(on)

VDD = -20V, ID = -10A, VGS = -10V,

RG=6nS

Rise Time2 tr

Turn-Off Delay Time2 td(off)

Fall Time2 tf

Total Gate Charge2 Qg

VDS = 0.5V(BR)DSS,

ID = -18A, VGS = -10VnCGate-Source Charge

2 Qgs

Gate-Drain Charge2 Qgd

Input Capacitance Ciss

VGS = 0V, VDS = -20V, f = 1MHz pFOutput Capacitance Coss

Reverse Transfer Capacitance Crss

Forward Transconductance1 gfs VDS = -10V, ID = -10A

DYNAMIC

V

VDS = -32V, VGS = 0V

PARAMETER SYMBOL TEST CONDITIONS

STATIC

LIMITSUNIT

Gate-Body Leakage

Gate Threshold Voltage

Drain-Source Breakdown Voltage

VGS(th)

VGS = 0V, ID = -250AV(BR)DSS

IGSS

IDSSVDS = -30V, VGS = 0V , TJ = 125 C

VDS = VGS, ID = -250A

VDS = 0V, VGS = 20V

Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz

Zero Gate Voltage Drain Current A

Ver 1.0 2 2010/4/28

P4004EDP-Channel Enhancement Mode MOSFET

Ver 1.0 3 2010/4/28

P4004EDP-Channel Enhancement Mode MOSFET

Ver 1.0 4 2010/4/28

P4004EDP-Channel Enhancement Mode MOSFET

Ver 1.0 5 2010/4/28

P4004EDP-Channel Enhancement Mode MOSFET

Ver 1.0 6 2010/4/28