Meeting the design challenges posed by systems and components for:

Enabling Molecular Advances in

Microelectronics & Optoelectronics

© 2013 Gelest, Inc.

• Metallization• Dielectrics

• Lithography• Encapsulation & Die Attach Adhesives

• OLEDs, LEDs, PLEDs, Phosphorescents, Electrochromics

Organosilicon and

Metal-Organic Precursors

Microelectronics &

Optoelectronics

Microelectronics

Barrier Layers – Group IV material are used to reduce electromigration and other effects thatCu and Al have on Si and SiO2 insulator properties and adhesion, while reducing metal corrosion.Typical deposition methods include PVD, CVD and MOCVD.

Strained Silicon – Silicon sources such as monochlorosilane, dichlorosilane, 1MS, 2MS, 3MS,4MS and Germanium sources such as germane, t-butylgermane, germanium tetrachloride and other analogs are used in production of strained silicon using metal organic vapor phaseepitaxy (MOVPE) to improve chip performance and lower energy consumption.

CHC

C(CH3)3C

O

O(CH3)3C

Cu

2

WOC2H5

OC2H5

C2H5O

OC2H5

C2H5O

AlH3 . (CH3)2NCH2CH3 AlH3 . (CH3)3NAs

(CH3)2N N(CH3)2

N(CH3)22

AKT890

CH3Ge

CH3

CH3CH3

C2H5Ge

H

C2H5HGe Ge

H

H

H

H

H

H

Ge HCH3CH2

H

H

GEG5001

Co

C

C

C

N

O

O

O

OTa(CH3CH2)2N

(CH3CH2)2N

(CH3CH2)2N

NC(CH3)3Si

Si

N

CH3 CH3

CH3 CH3

Ti

4

Ti

N(CH3)2

(CH3)2N N(CH3)2

N(CH3)2

Ti

N

N N

N

CH3CH3CH2

CH2CH3

CH3

CH2CH3H3C

H3C

CH3CH2

Ta N(CH3)2

N(CH3)2

(CH3)2N

(CH3)2N

N(CH3)2

Ta BrBr

Br

Br

Br

INCO032 OMTA082 SIT8008.0 OMTI088

OMTI083OMTA075 INTA070

CHC

C(CH3)3C

O

O(CH3)3C

Co

3

AKC240

CH3CH2CH2CH2 Ge

H

H

H

GEB1969.5

(CH3)3C Ge

H

H

H

GEB1970

GeTe

GEG5480

CH3 Ge

CH3

Si

CH3

Cl

Cl

Cl

GET8561

GeSe2

GEG5350

GET7550 GED3410 GED3450 GEE4695

AKC252.8

OMAL005 OMAL008 OMAS080 OMRU027

AKC262

SiGe Precursors

Cobalt Tantalum Titanium

Gelest offers precursor materials for metallization applications derived from Group III & IV elements (Si, Al, Ti, Ta, W, In, Sb, Ge) used to create conductive coatings on silicon, germanium, silicon carbide, sapphire and plastic substrates.These precursors are suitable for various deposition techniques such as ALD, CVD, MOCVDand PECVD.

METALLIZATION

Gelest has developed patented “chloride-free” chemical process technology to commercially produce GroupIV materials for use as gate dielectrics and ILD (inter-layer dielectrics). Typical Group IV materials for gatedielectrics are compounds of Hf, Zr, and rare earths such as Ce, La, Pr. Typical ILD precursors are Si based.In addition, Si based materials will play a critical role in future generations of porous dielectric materials that

will require improved adhesion, mechanical and thermal properties.Porous ULK dielectrics will require the use of CAPS.

DIELECTRICS

C

CH2

OCH3

CH3H3C

C CH2 O CH3

CH3

CH3

OHfO

H3C

H3C

H3C O H2C C

O

O

CH3H3C

CH3O

CH2

C

AKH333

HftC4H9O OtC4H9

OtC4H9tC4H9O

AKH326

Hf(CH3CH2)2N N(CH2CH3)2

N(CH2CH3)2

N(CH2CH3)2

OMHF075

Hf(CH3 )2N N(CH3 )2

N(CH3 )2(CH3 )2N

OMHF080

1MSSIM6515.0

HfN N

N

N

H3C C2H5

CH3

C2H5

CH3C2H5

C2H5

H3C

OMHF083

SiH

CH3

CH3

CH3

3MSSIT8570.0

CH2CH2Si(OMe) 3

(MeO) 3SiCH2CH2

SIB1831.0

SiH N Si H

CH3 CH3

CH3 CH3

H

TMDZSIT7542.0

1MS SIM6515.0 2MS SID4230.0

SiH

CH3

CH3

CH3

3MS SIT8570.0

CH3 Si CH3

CH3

CH3

4MS SIT7555.0

TSPSIT8709.8 SIT8185.0

SID4125.0SID3605.0

CH3COCH2CH2Si

CH3

Cl

CH3

O

SIA0010.0

CH3COCH2CH2Si

O OCH3

OCH3

OCH3

SIA0030.0 SIB1817.0

OEtOEt

SiCH2SiEtO OEt

OEt OEt

SIB1821.0

SID4595.0SID4593.0

ZrtC4H9O OtC4H9

OtC4H9tC4H9O

AKZ946

CHC

C(CH3)3C

O

O(CH3)3C

ZrOiC3H7

OiC3H72

AKZ948

Zr(CH3)2N N(CH3)2

N(CH3)2

N(CH3)2

TDMAZ OMZR080

SIM6560.0

CH3C

CH3H3C

H3C

CH3C

H3C

O

O

O

O

CH3

CH3

C

C

O

OSi

DABS SID2790.0 SIP6822.0

SiC2H5O OC2H5

OC2H5C2H5O

TEOS SIT7110.2

Gate Dielectrics (High-K)

Inter-Layer Dielectrics (Low-K)

SiO2 Source

Etch-Stop Layers

Hafnium

Thin Film Pore Sealing & CAPS

Porous Films & Porogens

Zirconium

NCH3

CH3

Si

CH3

CH3

CH3

MEMS, NEMS, SAMs

SIA0200.0 SIA0591.0SIA0540.0

H

CH3(CH2)16CH2 Si H

H

SIO6635.0 SID4629.6

CF3(CF2)7CH2CH2 Si

Cl

Cl

Cl

SIH5841.0

SiCl3

SIM6476.0

HCCH2CH2CH2Si(OC2H5)3

O

SIT8185.3

SIB0991.0

CF3CF2CF2CF2CF2CF2CH2CH2SiCl

Cl

Cl

SIT8174.0

CH3O (CH2CH2O) (CH2)3Si

CH3

CH3

OCH36-9

SIM6492.7

CF3CF2CF2CF2CF2CF2CH2CH2Si H

H

H

SIT8173.0

Metal Oxides

Gold, Silicon, Titanium Surfaces

Carbosilanes

Volatile Higher Silanes

CH3(CH2)10CH2Si

H

H

H

SAMs (Self-Assembled Monolayers) – Group IV materials can be applied neat orin solution via conventional lithography techniques to form SAMs. SAM is a layer of amphiphilicmolecules created by the chemisorption onto a metal oxide, precious metal surface, plastic ornanoparticle substrates, followed by the 2-dimensional alignment of hydrophobic groups to forma structures single monolayer. The surface can be selectively modified to achieve the desired anti-sticktion, mechanical and chemical properties for microelectromechanical systems (MEMS) and nanoelectromechanical systems (NEMS).

Volatile Carbosilanes and Higher Polysilanes – the preeminent precursors for:• Amorphous Silicon • SiCO:H films for low-k, barrier layers and etch-stop• Silicon Carbide films and buffer layers • ALD promoted patterning and seed layers• Carbon-doped (Tensile-Strained) Silicon • Silicon Carbonitride passivation

EPITAXY

SIM6515.01MS

SID4230.0 SID4595.0 SID4592.0

SID4593.0 SIT8709.3 SIT8709.8

SII6463.4 SIN6597.07 SIT7880.0 SIT8709.6

SIT8715.9

Optoelectronics

Group IV materials are utilized to modify a variety of surfaces that include glass, metal oxides,plastics and nano-crystals. Plastic substrates are critical in the manufacture of flexible electronic displays. Gelest offers a multitude of materials for metallization via lowtemperature vapor deposition techniques such as CVD and ALD to yield conductive coatingsand dielectric coatings for light emitting diodes to include OLEDs, PLEDs and PhosphorescentOLEDs. The ability to customize the refractive index of Group IV materials makes them idealcandidates for cladding fiber optic cables and planar wave-guides. Gelest offers an extensive range of materials for antireflective and refractive index coatings.

LEDs (Organic, Polymer, Phosphorescent)

Conductive Coatings Dielectric Coatings

SNB2000

SNT7560

N

O-

Al+3

3

AKA067

Cu

NN N

N NN

N N

AKC261

N

O-

Zn+2

2

AKZ933.8

C2 H5OGe

OC2 H5

OC2 H5C2H5O

GET7100

BO O

O

CH2CH3

CH2CH3

CH3CH2

AKB156.2

N

O-

Al+3

Cl

3

N NH3 C CH3Ru

Cl

3

AKA036

N

O-

Al+3

3

AKA067

N

O-

Er+3

3

AKE276

3

S CHC

CCF3

O

OEu

AKE297

CHC

C(CH3 )3 C

O

O(CH3 )3 C

Tm

3

AKT840.5

CHC

C(CH3 )3 C

O

O(CH3 )3 C

Y

3

AKY932AKE286.5

N

O-

Ga+33

AKG308

3

Ce

H3 C

CH3

CH3

CH3

CH3

H3 C

Si

Si

N

SIC2264.6SIB1871.0

C

OO

-H3C Cd

+2

2

CXCD010

OMRU018

Si

O

O

O

OH

C CH3

CH2

H3C

C

C CH3H3C

CH2

CH3CH2

CH3

CH3

CH3

CH3

SIT8627.0

CH3(CH2)16CH2 Si

Cl

Cl

Cl

SIO6640.0Si

O

O

O

OH

C CH3

CH3

H3C

C

C CH3H3C

CH3

H3C

CH3

CH3

SIT8088.0

Sn

O

O

O

O

C

C

C

C

CH3

H3C

CH3

CH3

H3C CH3

CH3

CH3

CH3

CH3

H3C CH3

SNT7064

Si(OC2H5)3

SIB0992.0

OLED Triplet Emitters

Chromophoric and Phosphorescent Materials

Optical Dopants

11 East Steel Rd.Morrisville, PA 19067Phone: 215-547-1015Fax: 215-547-2484info@gelest.com

Gelest, Inc.Provides technical expertise in silicon and metal-organic materials for applications in Microelectronics & Optoelectronics. The core manufacturingtechnology of Gelest is silanes, silicones and metal-organics with the capability to handle flammable, corrosive and air sensitive liquids, gasesand solids. Headquartered in Morrisville, PA, Gelest is recognized worldwideas an innovator, manufacturer and supplier of commercial and research quan-tities serving advanced technology markets through a materials science drivenapproach. The company provides focused technical development and applica-tion support for: semiconductors, optical materials, pharmaceutical synthesis,diagnostics and seperation science, and specialty polymeric materials.

For additional information on Gelest’s Silicon and Metal-Organic based products or to inquire how we may assist in Enabling Your Technology, please contact:

www.gelest.com