organic semiconductor with micro-grooved wet unified … · supporting information unified film...
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Supporting Information
Unified Film Patterning and Annealing of an
Organic Semiconductor with Micro-Grooved Wet
Stamps
Kyunghun Kim1,‡, Mi Jang2,‡, Minjung Lee2, Tae Kyu An3, John E. Anthony4, Se Hyun Kim5,*,
Hoichang Yang2,*, and Chan Eon Park1,*
1Department of Chemical Engineering, Pohang University of Science and Technology, Pohang
790-784, Korea
2Department of Applied Organic Materials Engineering, Inha University, Incheon 402-751,
Korea
3Department of Polymer Science and Engineering, Korea National University of
Transportation, Chungju, 27469, Korea
4Department of Chemistry, University of Kentucky, Kentucky 40506, USA
5Division of Chemical Engineering, Yeungnam University, Gyeongsan 712-749, Korea
KEYWORDS: direct solvent annealing; triethylsilylethynyl-anthradithiophene (TES-ADT);
soft patterning; uniformity; organic field-effect transistor
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry C.This journal is © The Royal Society of Chemistry 2016
‡K.K. and M.J. contributed equally to this work.
*Corresponding authors: [email protected]; [email protected]; [email protected]
0 min 2 min 4 min 10 min
20 min 30 min 50 min 70 min
0 10 20 30 40 50 60 701
10
W, %
Time (min)
Optimized Immersion TimeW =
(a)
(b)
Figure S1. (a) Degree of weight increase and (b) OM images of the 50 m-patterned PDMS stamp over time
during immersion in the DCE reservoir. Note that in (b), the black scale bars indicate 50 m. As the immersion
time increased, particularly after 10 min, the line width of the PDMS stamp increase, indicating swelling in the
PDMS.
Figure S2. Photographs of the -PDMS stamps before and after the TES-ADT patterning process.
200 um
(a) (b)
Figure S3. Polarized OM images of the unpatterned TES-ADT films after applying the solvent annealing process.
(a) The radial growth of TES-ADT crystals from the nucleation site, and (b) the impingement among crystallites
grown from different nucleation sites.
(a) (b) (c) (d)
20 μm
Figure S4. Polarized OM images of square-patterned TES-ADT films prepared using (a) 100, (b) 50, (c) 10, (d)
2.5 m line patterned PDMS stamps.
Figure S5. AFM topography (top) and cross-section profile (bottom) of the 100-m patterned TES-ADT film.
Figure S6. 2 μm × 2 μm AFM topography image of the as-spun TES-ADT film.
0.0
0.5
1.0
1.5
qz(Å-1)
0.0 0.5 1.0 1.5 qxy
Figure S7. 2D GIXD patterns of the as-spun TES-ADT film.
qz (A-1)
0.3 0.6 0.9 1.2 1.5 1.8
Inte
nsity
(a.u
.)
100
101
102
103
104
105
106
107
108
qz (A-1)
0.3 0.6 0.9 1.2 1.5 1.8
Inte
nsity
(a.u
.)
100
101
102
103
104
105
106
107
108
perpendicularparallel
qz (A-1)
0.3 0.6 0.9 1.2 1.5 1.8
Inte
nsity
(a.u
.)
100
101
102
103
104
105
106
107
108
qz (A-1)
0.3 0.6 0.9 1.2 1.5 1.8
Inte
nsity
(a.u
.)
100
101
102
103
104
105
106
107
108
(a) (b)
(c) (d)
{10}
{01}
{11}̶
{10}
{01}
{11}̶
{10}
{01}
{11}̶
{10}
{01}
{11}̶
Figure S8. 1D X-ray reflections extracted at q{01}, q{10}, and q{-11} from the 2D GIXD patterns of (a) 100, (b) 50, (c) 10, (d) 2.5 μm TES-ADT samples (Figure 5).
Figure S9. 2D GIXD patterns obtained from a normal DSA-treated TES-ADT film along the footprint of the
incident beam with a width height of 300 50 m2. The patterns corresponding to each footprint are indicated
in the upward-polarized OM images.
-20 -15 -10 -5 0 50
2
4
6
8
10
-I D (A
)
VD (V)
VG = 0 V VG = -5 V VG = -10 V VG = -15 V VG = -20 V
-20 -15 -10 -5 0 50
2
4
6
8
10
-I D (A
)
VD (V)
VG = 0 V VG = -5 V VG = -10 V VG = -15 V VG = -20 V
Figure S10. Output characteristics of OFETs prepared with 100 or 2.5 m-patterned TES-ADT film.