optical sensor solutions first sensor product catalog...

optical sensor solutions

First sensor product catalog january 2013

First Sensor · Welcome 3

First sensor ag

www.first-sensor.comDevelopment, design and manufacture of silicon PIN photodiodes, avalanche photodiodes, linear and matrix photodiode arrays, laser and light emitting diodes, position sensing photodiodes, wavelength sensitive photodiodes as well as opto-electronic modules and systems.

First sensor ag (Munich)

www.sensortechnics.comDevelopment, design and manufacture of pressure measurement systems, level sensors, flow sensors as well as fluid control systems.

First sensor inc.

www.first-sensor.comUSA based subsidiary of First Sensor AG, providing design, manufacturing and testing of semi-standard and unique photodetector, emitter and opto-electronic solutions for the US market.

First sensor technology gMbh

www.first-sensor.comDevelopment, design and manufacture of MEMS based piezoresistive pressure sensors for applications up to 225°C.

elbau gMbh

www.elbau-gmbh.deElectronic engineering and manufacturing services (EMS) for pressure, flow and optical sensor systems as well as for other custom sensor solutions.

Microelectronic packaging dresden gMbh

www.mpd.deServices in the development and manufacturing of electronic microsystems (EMS) to electronic components up to complex multi-ship modules and systems. Custom miniaturization of opto-electronic and MEMS-based sensors as well as highly integrated circuits.

silicon Micro sensors gMbh

www.smicrosensors.deDevelopment, design and manufacture of optical and MEMS based sensor solutions for harsh environmental conditions.

lewicki Microelectronic gMbh

www.lewicki-gmbh.deContract manufacturer of integrated circuit packaging for highly sophisticated hybrid circuits and microelectronic applications.

klay-instruMents bV

www.klay-instruments.comManufacturer of pressure-, level- and temperature transmitters.

2 First Sensor · Welcome

welcoMe to First sensor

First Sensor is the leading provider of unique sensor solutions with the highest levels of precision and reliability. We develop and manufacture tailor-made sensor solutions for optical and radiation detection, pressure, flow, and liquid level measurements, as well as special sensing applications on a global scale for a variety of applications and industries. First Sensor provides its customer’s sensor solutions along the entire value-added chain based on various base materials as well as a broad portfolio of innovative manufacturing technologies in the fields of opto-electronic and MEMS (Micro-Electro-Mechanical Systems) sensors.

Over the past years, we have consistently expanded our business model and developed from a manufacturer of customer-specific silicon-based optical sensor components into an integrated, internationally oriented industrial company. With our headquarters in Berlin our customers can depend on 14 development and manufacturing locations based in Germany, USA, Canada, the Netherlands, Sweden, UK and Singapore.

Founded in 1991 in Berlin, First Sensor employs around 750 employees worldwide and expects to achieve total sales of more than EUR 120 million in 2012. First Sensor AG is listed on the Frankfurt Stock Exchange in the Prime Standard segment.

Further Information and key figures are available at www.first-sensor.com.

54 First Sensor · Product Overview First Sensor · Product Overview

custoM solutions

▪ Customized wafers▪ Customized chips▪ Customized packages▪ Customized hybrids

First Sensor offers full customization of photodiodes, packages and opto-electronic modules for use in life science, industrial, aerospace, security and mobility markets. With complete vertical integration we provide the solution to your light sensing needs.

Modules & systeMs

▪ Evaluation boards▪ Detector modules▪ Medical equipment▪ Life Science devices

First Sensor develops a diversity of high-quality and high complexity measurement systems for life science technology, particulate measurement, engineering and industry research as well as modules and evaluation boards for detectors.

product oVerView

detectors

▪ PIN and avalanche photodiodes▪ Position sensing photodiodes▪ Quadrant photodiodes▪ Wavelength sensitive detectors▪ Ionizing radiation detectors▪ InGaAs detectors

First Sensor has a large selection of high sensitivity, high speed and low dark current photodetectors optimized for ultraviolet, visible and infrared light as well as ionizing radiation. Package solutions include surface mount (SMD), through hole (THD) and metal can type (TO) devices.

eMitters

▪ LEDs▪ Lasers

Complementing the detector portfolio our emitters include a wide range of light emitting diodes and lasers for visible and infrared applications. Find both the appropriate detector and the fitting light source for your light sensing system.

76

industrial

▪ Automation▪ Motion Control▪ Distance Measurement▪ Interval Measurement▪ Speed Control▪ Laser Leveling▪ Proximity Sensors

Automated production processes rely on optical procedures to ensure quality and minimize throughput time. Ship building for example would be nearly impossible today without laser leveling technology. Optical procedures for position and distance determination are essential requirements for the measurement and alignment of complex work pieces.

liFe science

▪ Imaging Technology for medicine and nuclear medicine▪ Blood Tests▪ Pulse Oximetry▪ Water Analysis▪ Gamma Detection

Individual sensor solutions support physicians with the examination and monitoring of vital signs and are used for quick, simple and accurate detection of cancer cells. The environment sector benefits from precise measurements of air and water quality.

aerospace

▪ Mars Camera▪ Simulation Tools▪ Power Electronics▪ Laser Guidance▪ FoF Systems▪ Laser Range Finder▪ Satellite and Orientation Systems

In the aerospace industries, First Sensor has proven its worth over years. In many cases, highly specialized solutions are required which are optimized over many design cycles and in close cooperation with our customer. In terms of product qualification, we can fall back on our extensive experience of wide ranging procedures in the field of optical measurement and test engineering.

security

▪ Traffic and Speed Control▪ Luggage Control▪ Nuclear Radiation Sensors▪ Surveillance Cameras for Public Transportation

First Sensor offers optimized, highly sensitive sensor solutions that are able to detect light of different wavelengths. Light of different wavelengths is used, for example, to monitor hazard areas or screen items of luggage. In this field, the highly sensitive sensor solutions are able to detect visible and infrared light as well as X-rays and ionizing radiation (radioactivity).

applications

First Sensor has gained decades of experience in the implementation of customer-specific orders in a wide range of industries. Be it for either research labs or large scale production, we will help you find the right product for your unique application and development process.

Mobility

▪ LIDAR▪ ACC▪ Distance Detection▪ Blind Spot Assist▪ Communication▪ Virtual Controls▪ Sun Sensors▪ Rain Sensors

Our products for the mobility industries meet the highest demands with regard to service, life stability and process reliability. Stable production cycles as well as continuous controls and improvements ensure that we are able to satisfy highest quality requirements.

First Sensor · ApplicationsFirst Sensor · Applications

First Sensor · Custom Solutions 98 First Sensor · Custom Solutions

custoM solutions

capabilities

State-of-the-art fabrication plants:▪ 4.000 m² ISO 5 class clean room area▪ Vertically integrated silicon wafer processing capability▪ Prototype assembly and packaging capabilities▪ Complete testing capabilities and failure analysis tools

The highly experienced and resourceful engineering team offers substantial customization capabilities in the development and manufacturing for:▪ Mask design▪ Wafer processing and chip design▪ Packaging▪ Electronic design for hybrid modules

First Sensor holds the technology, experience and capacity to develop and manufacture your sensor from chip up to the complete measurement system. Ask us to find your unique sensor solution!

Front end custoMization

To fit your unique sensor application we can optimize our front end processes: ▪ Chip geometry – to suit your application▪ Responsivity – optimized for your operating wavelength ▪ Rise time – to meet your bandwidth requirements▪ Capacitance – to reduce noise▪ Dark current – to improve dynamic range▪ Anti reflective coating – to reduce optical losses▪ Filter on chip – to reduce ambient light effects

back end custoMization

To fit your environmental situation our back end customization capabilities include:▪ Filter on package – to reduce ambient light effects▪ Optical components – to include optical functions, scintillators, etc.▪ Light sources – include LEDs or laser dies to miniaturize your assembly▪ Packaging – to optimize cost and performance

optoelectronic integration

First Sensor offers opto-electronic modules to simplify the integration and evaluation of your application.

We tailor solutions to meet your needs: ▪ Optimized gain-bandwidth product▪ Electronics for ionizing radiation▪ Temperature compensation▪ Read-out electronics▪ Additional optics▪ Ultra low noise high voltage source▪ A/D converter▪ Customized interface

detectors: silicon aValanche photodiodes (apd)

Silicon avalanche photodiodes (APD) are high speed, high sensitivity photodiodes with an internal gain mechanism capable of a high gain bandwidth product. APDs are excellent for measurements at very low light levels where a fast response time is required. All avalanche photodiodes from First Sensor are available in a wide range of sizes and packages, including multi-element arrays.

Spectral response; Typ. temp. 23 °C, M = 100

First Sensor · Detectors · Silicon avalanche photodiodes (APD) 1110 First Sensor · Detectors · Silicon avalanche photodiodes (APD)

Series 8

Series 9

Series 10

Series 11

Series 12

300 400 500 600 700 800 900 1000 1100

70

60

50

40

30

20

10

0

Wavelength [nm]

Sens

itivi

ty [A

/W] QE = 100%

apd series optimized for application special features

SERIES 11 360…560 nm Analytical instruments, readout for scintillators

Blue enhanced, high speed

SERIES 12 550…750 nm Precise distance measurement,communication

Ultra low temp. coefficient, flat frequency response up to 3 GHz

SERIES 8 750…820 nm General purpose, resistance measurement, laser scanner, high speed applications, optical fiber and communication

High speed, low temperature coefficient, high gain, high gain bandwidth product

SERIES 9 750…930 nm Laser rangefinder, LIDAR,basic technology for arrays

Low rise time at higher NIRsensitivity, low temperature coefficient, high gain

SERIES 10 860…1100 nm Range finder, laser tracker, LIDAR Sensitivity at 1064 nm is close to physical limits

First Sensor · Detectors · Silicon avalanche photodiodes (APD) 1312 First Sensor · Detectors · Silicon avalanche photodiodes (APD)

SERIES 11 · BLUE ENHANCED

order no. type no.active area(mm) (mm2)

dark current (na)

breakdownvoltage (V)

capacitance (pF)

rise time (ns)

temp.coefficient(V/k)

chip package size area at M = 100 at id = 2 μa at M = 100

100 khzat 410 nm, 50 Ω

Vbr

tk

500970 AD800-11 TO52S1 Ø 0.80 0.5 1.0 90…240 2.5 1 typ. 0.88

500967 AD1900-11 TO5i Ø 1.95 3.0 5.0 10.0 2

SERIES 12 · 550 nM…750 nM: hIgh SpEED / hIgh gAIn


dark current (na)


capacitance(pF)

cut-offfrequency(ghz)


chip package size area at M = 100 at id = 2 μa M = 100 M = 100 V

br tk

501831 AD100-12 TO52S1 Ø 0.100 0.0078 0.05 60…120* 0.5 3 typ. 0.2

501828 LCC6.1G

501162 AD230-12 TO52S1 Ø 0.230 0.042 0.20 1.5

501157 LCC6.1G

501163 AD500-12 TO52S1 Ø 0.500 0.196 0.30 4.5

501155 LCC6.1G

SERIES 12 · 550 nM…750 nM: hIgh SpEED / hIgh gAIn WITh BAnDpASS FILTER


bandpass centerwavelength (nm)

bandpass transmission (%) bandpass FwhM (nm)

chip package size area at center wavelength at 50% transmission

501829 AD100-12* LCC6.1f Ø 0.100 0.0078 635 >90 55

501830 655 >85 65

501156 AD230-12* Ø 0.230 0.042 635 >90 55

501820 655 >85 65

501154 AD500-12* Ø 0.500 0.196 635 >90 55

501819 655 >85 65

* Ubr - binning available

SERIES 8 · 750 nM…820 nM: hIgh SpEED / hIgh gAIn


dark current (na)


capacitance(pF)

rise time(ns)



br tk

501810 AD100-8 LCC6.1G Ø 0.10 0.008 0.05 80...160* 0.5 < 0.18 typ. 0.45

500011 TO52S1

501171 TO52S3

501078 AD230-8 LCC6.1G Ø 0.23 0.04 0.3 1.2 0.18

500019 TO52S1

500022 TO52S3

500030 AD500-8 TO52S1 Ø 0.50 0.2 0.5 2.2 0.35

500305 TO52S2

500155 TO52S3

501077 LCC6.1G

500947 AD800-8 TO52S1 Ø 0.80 0.5 2.0 80...240* 5.0 0.7

501117 AD1100-8 Ø 1.13 1.00 4.0 8.0 1.0

500015 AD1900-8 TO5i Ø 1.95 3.00 15.0 20.0 1.4

500158 AD3000-8 Ø 3.00 7.07 30.0 45.0 2.0

500160 AD5000-8 Ø 5.00 19.63 60.0 120.0 3.0

SERIES 8 · 750 nM…820 nM: hIgh SpEED / hIgh gAIn WITh BAnDpASS FILTER





501811 AD100-8* LCC6.1f Ø 0.100 0.0078 635 >90 55

501812 655 >85 65

501079 AD230-8* Ø 0.230 0.042 635 >90 55

501805 655 >85 65

501076 AD500-8* Ø 0.500 0.196 635 >90 55

501809 655 >85 65


www.first-sensor.com/de/search/500970

http://www.first-sensor.com/de/search/500967

http://www.first-sensor.com/datasheet/501831
































1514 First Sensor · Detectors · Silicon avalanche photodiodes (APD) First Sensor · Detectors · Silicon avalanche photodiodes (APD)

SERIES 10 · 1064 NM ENHANCED


darkcurrent (na)


capacitance (pF)

rise time(ns) Vop*


chip package size area at M = 100 at id = 2 μa at M = 100

100 khzat 1060 nm, 50 Ω

Vbr

tk

500953 AD500-10 TO5i Ø 0.50 0.196 1.5 220…600** 0.5 4 typ. 3.3

501233 AD800-10 Ø 0.80 0.5 3 1 5

500883 AD1500-10 Ø 1.50 1.77 7 3

501234 AD4000-10 TO8Si Ø 4.00 12.56 50 15 6

501174 QA4000-10 4 x 3.14 12.5* 3.75*

* per element ** Ubr - binning possible

SERIES 9 · 750 nM…930 nM: nIR EnhAncED ApD ARRAyS AnD QUADS

order no. type no.active area(μm)

gap;pitch (μm)

dark current (na)


capacitance(pF)

rise time(ns)


chip package size at M = 100 at id = 2 μa M = 100 M = 100 V

br tk

501098 16AA0.13-9 SOJ22GL 648 x 208* 112; 320 1.0 160…240** 0.5 1-2 typ. 1.45

500038 DIL18

501097 16AA0.4-9 SOJ22GL 1000 x 405* 95; 500 2.0 1.0

501099 8AA0.4-9

50130802 25AA0.04-9 LBGA 205 x 205* 95; 300 0.3 0.5

50130902 25AA0.16-9 405 x 405* 1.2 1.0

50130702 64AA0.04-9 BGA 205 x 205* 115; 320 0.3 0.75

501207 QA4000-9 TO8Si Ø 4000 (quad)

110; - 4.0 7.0

* per element ** Ubr - binning available

SERIES 9 · 750 nM…930 nM: nIR EnhAncED WITh BAnDpASS FILTER





501265 AD230-9* TO52S1F2 Ø 0.230 0.042 905 >90 45

501817 LCC6.1f

500590 AD500-9* TO52S1F2 Ø 0.500 0.196

501818 LCC6.1f


SERIES 9 · 750 nM…930 nM: nIR EnhAncED


dark current (na)


capacitance (pF)

rise time (ns)



br tk

501123 AD230-9 LCC6.1* Ø 0.230 0.042 0.5 160…240* 0.8 0.5 typ. 1.45

500020 TO52S1

500023 TO52S3

501122 AD500-9 LCC6.1* Ø 0.500 0.196 0.8 1.2 0.55

500031 TO52S1

500306 TO52S2

500156 TO52S3

501196 AD800-9 TO5i Ø 0.80 0.5 2.0 2.0 0.9

501197 AD1100-9 Ø 1.13 1.0 4.0 3.0 1.3

501208 AD1500-9 Ø 1.50 1.77 2.0 4.0 2.0

501198 AD3000-9 Ø 3.00 7.07 30.0 18.0

500161 AD5000-9 TO8i Ø 5.00 19.63 60.0 45.0 3.0




http://www.first-sensor.com/de/search/AD4000-10

























16 First Sensor · Detectors · PIN Photodiodes 17

detectors: pin photodiodes

Silicon photodiodes are used to convert photonic energy into electrical current. Silicon has unique properties for light detection from 200 nm to 1100 nm as well as detection of α, β, γ and X-ray radiation.

First Sensor’s product line includes seven different series of silicon photodiodes. Each series is specially fabricated to address different performance specifications and design goals.

All these series are available in a wide variety of sizes, configurations and packages including detector amplifier and detector-optical filter combinations. Additionally, multielement arrays and modules are available as well as full custom designs. All series can be modified for customer specific applications.

Spectral response; Typ. temp. 23 °C, M = 100

16 First Sensor · Detectors · PIN Photodiodes

Series 5

Series 5b

Series 5t

Series 6

Series 6b

Series 7

Series Q

300 400 500 600 700 800 900 1000 1100

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

Wavelength [nm]

Sens

itivi

ty [A

/W]

QE = 100%

pin series optimized for application special features

SERIES 6b 400…650 nm Photometric illuminometer Blue / green enhanced

SERIES 5b 350…650 nm Optical fiber communication, high speed photometry

high speed blue-enhanced Epitaxy pIn-diode

SERIES 5t 400...900 nm high speed red-enhanced Epitaxy pIn-diode

SERIES 5 400…950 nm high speed nIR-enhanced Epitaxy pIn-diode

SERIES 6 700…950 nm Precision photometry, analytical instruments

General purpose, low dark current, fast response

SERIES 7 700…1000 nm High energy physics Low capacity, full depletable design available

SERIES Q 900…1100 nm yAg laser detection Enhanced NIR sensitivity, low voltage, fully depletable, low capacitance

SERIES i 600…1700 nm Eye-safe laser detection InGaAs photodiodes, high IR sensitivity, low dark current

SERIES X Ionizing radiation Medical, security, material analysis

With or without scintillator, ultra low dark current

18 First Sensor · Detectors · PIN Photodiodes First Sensor · Detectors · PIN Photodiodes 19

SERIES 5 · hIgh SpEED nIR-SEnSITIvE phOTODIODES


darkcurrent (na)

capacitance (pF)

rise time (ns)

shuntresistance (MΩ) n.e.p. (w/hz1/2)

chip package size area at 20 V at 0 V at 20 V at 20 V at 10 mV at 0 V at 20 V

500122 pS0.25-5 TO52S1 0.5 x 0.5 0.25 0.1 6 1.8 0.4 1000 1.1 x 10-14 6 x 10-15

500119 TO52S3

500973 LCC6.1G*

500116 SMD1206*

501257 TO52S1 Ø 0.84 0.55 0.2 10 2 1.0 500 1.5 x 10-14 1 x 10-14

501124 LCC6.1G*

500127 pS1.0-5 TO52S1 1.0 x 1.0 1 20 3.5 1.5 500 2.4 x 10-14 2 x 10-14

500128 TO52S3

501128 LCC6.1G*

501291 pS7-5 TO5 2.7 x 2.7 7 0.5 80 20 2 200 5 x 10-13

501218 pS11.9-5 3.45 x 3.45 11.9 1 180 40 3 100 3.4 x 10-14 1 x 10-13

500097 pc20-5 TO8 Ø 5.05 20 2 300 65 3.5 50 4.2 x 10-14 2 x 10-13

501292 pS33-5 5.7 x 5.7 33 325 90 4 5.4 x 10-14

501011 pS100-5 LCC10E* 10 x 10 100 1400 350 5 4.9 x 10-14

501433 CERpinG*

* surface mount available with clear epoxy (E), silicone (S) and glass (G) or fused silica (Q) window

SERIES 5T · hIgh SpEED RED-SEnSITIvE phOTODIODES, LOW vOLTAgE


darkcurrent (na) capacitance (pF)

rise time (ns)


chip package size area at 3.5 V at 0 V at 3.5 V at 3.5 V at 10 mV at 635 nm, 3.5 V

501126 pS0.25-5t LCC6.1G* 0.5 x 0.5 0.25 0.01 6 2.3 0.4 10,000 4 x 10-15

501434 SMD1206

501125 pc0.55-5t LCC6.1G* Ø 0.84 0.55 10 4.4 1.0

501289 T 1 3/4*

501290 T 1 3/4 black

501127 pS1.0-5t LCC6.1G 1 x 1 1.0 20 8 1

501432 pS7-5t TO5 2.7 x 2.7 7 1 300 70 3 100 4 x 10-14

SERIES 5B · hIgh SpEED BLUE-SEnSITIvE phOTODIODES, LOW vOLTAgE



rise time (ns)


chip package size area at 3.5 V at 0 V at 3.5 V at 3.5 V at 10 mV at 405 nm, 3.5 V

501424 pS1.0-5b TO52S1 1 x 1 1.0 0.01 20 8.5 1.3 10,000 8.1 x 10-15

501428 LCC6.1G*

501425 pS7-5b TO5 2.7 x 2.7 7 0.04 120 50 5.0 2500 1.6 x 10-14

501426 pc10-5b Ø 3.57 10 0.06 200 75 6.0 1700 2.0 x 10-14

501427 pS13-5b 3.5 x 3.5 13 0.08 230 85 1250 3.2 x 10-14

SERIES 6B · BLUE / GREEN ENHANCED



rise time (ns)

shuntresistance(MΩ)

n.e.p. (w/hz1/2)

chip package size area at 5 V (na) at 0 V at 5 V at 410 nm, 5 V, 50 Ω

at 10 mV at 410 nm, 5 V, 50 Ω

501429 pS1-6b TO52S1 1 x 1 1 0.05 20 5 10 1000 1.8 x 10-14

501430 LCC6.1G

501297 pc5-6b TO5 Ø 2.52 5 0.10 65 20 20 600 2.6 x 10-14

501242 pS7-6b 2.7 x 2.7 7 0.15 100 30 25 330 3 x 10-14

501229 pc10-6b Ø 3.57 10 0.20 140 35 45 300 3.6 x 10-14

501241 pS13-6b 3.5 x 3.5 13 0.25 180 50 50 200 4 x 10-14

501244 pS33-6b TO8 5.7 x 5.7 33 0.5 400 120 140 100 5.7 x 10-14

501258 pS100-6b LCC10E* 10 x 10 100 1.0 720 275 200 50 8 x 10-14

501135 CERpinE

501045 CERpinG*

SERIES 6B · BLUE/ GREEN ENHANCED WITH BANDPASS FILTER





501408 pR20-6b TO5 5,4 x 4,2 20 488 70 10

501409 550 50

501284 633 75

501410 680 50










































20 First Sensor · Detectors · PIN Photodiodes First Sensor · Detectors · PIN Photodiodes 21

SERIES Q · QUADRAnTS · 1064 nM EnhAncED, FULLy DEpLETABLE


darkcurrent** (na) capacitance** (pF) rise time (ns) type

chip package size area at 150 V at 150 V at 180 V, 1064 nm, 50 Ω

501049 Qp22-Q TO8S Ø 5.33 4 x 5.67 1.5 2 12 quadrant

501048 Qp45-Q 6.7 x 6.7 4 x 11 8 4

501274 TO8Si

501275 LCC10G*

501272 Qp100-Q LCC10* 10 x 10 4 x 25 6.5 10

500798 Qp154-Q TO1032i Ø 14.0 4 x 38.5 10 14

501313 TO1081i with heater

* surface mount available with clear epoxy (E), silicone (S) and glass (G) or fused silica (Q) window ** per segement

SERIES Q · 1064 nM EnhAncED, FULLy DEpLETABLE



rise time (ns) 905 nm, 50 Ω

n.e.p. (w/hz1/2)

chip package size area at 10 V 150 V at 10 V at 150V at 10 V at 150 V

501446 pc10-Q TO8i Ø 3.57 10 0.1 0.5 10 4.5 50 14 2.6 x 10-14

501447 pc20-Q TO8Si Ø 5.05 20 0.2 1 17 8 3.7 x 10-14

501448 pc50-Q Ø 8.05 50 0.5 3 43 18 8.3 x 10-14

501273 pS100-Q LCC10G* 10 x 10 100 1.5 10 78 32 12 x 10-14

SERIES 7 · QUADRAnTS · FULLy DEpLETABLE IR DETEcTORS


darkcurrent** (na) capacitance** (pF) rise time (ns) type

chip package size area at 150 V at 150 V at 150 V, 1064 nm, 50 Ω

501319 Qp100-7 LCC10G* 10 x 10 4 x 25 10 13 6 quadrant

SERIES 7 · FULLy DEpLETABLE IR DETEcTORS



rise time (ns) 905 nm, 50 Ω

n.e.p. (w/hz1/2)

chip package size area at 10 V 150 V at 10 V at 150 V at 10 V at 150 V

501285 pc5-7 TO8i Ø 2.52 5 0.05 0.25 6 2.5 45 6 1.7 x 10-14

501286 pc10-7 Ø 3.57 10 0.1 0.5 12 4.5 50 2.1 x 10-14

501287 pc20-7 TO8Si Ø 5.05 20 0.2 1 20 8 2.7 x 10-14

501317 pS100-7 LCC10G* 10 x 10 100 1.5 10 90 32 8.7 x 10-14

SERIES 6 · QUADRANTS · LOW DARK CURRENT, GENERAL PURPOSE


typ. darkcurrent** (na)

Max.capacitance** (pF) gap (μm)

rise time (ns) type

chip package size area at 10 V at 10 V at 850 nm, 10 V, 50 Ω

501222 Qp1-6 TO5 Ø 1.13 1.0 0.1 1.0 16, Oxid 20 quadrant

501040 Qp5-6 Ø 2.52 5.0 0.2 3.0 24, Oxid

501254 Qp5.8-6 2.40 x 2.40 5.8 0.4 3.5 50, Oxid

501256 Qp10-6 TO8S Ø 3.57 10.0 0.5 5.0 28, Oxid

500140 Qp20-6 Ø 5.05 20.0 1.0 10.0 34, Oxid 30

500732 Qp50-6 Ø 7.80 50.0 2.0 25.0 18, Oxid 40

500142 42, Oxid

501416 TO8S flat 18, Oxid

501417 42, Oxid

501276 Qp100-6 LCC10G* Ø 11.20 100.0 4.0 50. 0 50, Oxid

501277 LCC10E*

* surface mount available with clear epoxy (E), silicone (S) and glass (G) or fused silica (Q) window ** per segement

SERIES 6 · LOW DARK CURRENT, GENERAL PURPOSE



rise time (ns)

shuntresistance(MΩ)

n.e.p. (w/hz1/2)

chip package size area 10 V at 0 V at 10 V 850 nm, 50 Ω at 10 V

at 10 mV at 10 V, λ = 900 mn

500151 pc1-6 TO52S1 Ø 1.13 1 0.05 15 3 10 >2000 6.3 x 10-15

500482 TO52S3

501214 pc5-6 TO5 Ø 2.52 5 0.1 65 10 13 2000 8.8 x 10-15

501221 pS7-6 2.7 x 2.7 7 12 15

501193 pc10-6 Ø 3.57 10 0.2 100 15 20 1000 1.3 x 10-14

501246 pS13-6 3.5 x 3.5 13 18

500113 pc20-6 TO8 Ø 5.05 20 0.3 220 35 25 700 1.5 x 10-14

501298 pS33-6 5.7 x 5.7 33 0.4 300 50 450 1.8 x 10-14

500103 pc50-6 TO8S Ø 7.98 50 0.5 480 90 30 300 2 x 10-14

500082 pc100-6 BNC Ø 11.28 100 1.0 900 160 40 150 2.8 x 10-14

501264 pS100-6 10 x 10

500149 CERpinG*

501435 LCC10E*









































22 First Sensor · Detectors · Series X First Sensor · Detectors · Series X 23

detectors: series X

nuclear particles and X-rays can be detected with silicon either directly via absorption within the crystal lattice or indirectly via scintillators. For the absorption mode to be efficient it requires a large absorptive volume. This capability is achieved by First Sensor’s superior wafer fabrication processing that produces detectors which can be operated at bias voltages that produce fully depleted active regions but still maintain extremely low dark currents.

Special features ▪ Silicon thickness up to 700 µm ▪ Very low dark signals ▪ Very low capacitance

Gamma absorption; Typ. temp. 23 °C

X100-7 and X100-7.2

Gamma absorption; Typ. temp. 23 °C

X10-γ with and without 3 mm CsI: Tl scintillator

1 10 100 1000

100

10

1

0.3

Gamma Energy [keV]

gam

ma

- ab

sorp

tion

[%]

X100-7 with epoxy encaps.

X100-7.2 with Al window

1 10 100 1000 104

100

10

1

0.3

Gamma Energy [keV]

gam

ma

- ab

sorp

tion

[%]

without csI:Tl

with csI:Tl

SERIES X · IOnIzIng RADIATIOn DETEcTORS AnD DETEcTOR ARRAyS


typ. dark current (na)

capacitance (pF)

gamma-energy (keV) scintillator

gamma- window (mm)

chip package size area at 120 V at 120 V

50190301 X5-γ TO8Si Ø 2.52 5.0 0.01 2.5 >1 no Ø 6

501907 X10-6 TO39 Ø 3.57 10.0 0.5 at 10 V 18 at 10 V >5 Epoxy

50190401 X10-γ TO8Si 0.02 4.5 >1 Ø 6

50190001 TO8Si Sc 2…>1000 yes

501401 X100-7 LCC10E 10 x 10 100 5 at 10 V 80 at 10 V >5 no Epoxy

501400 CERpinE

501444 X100-7.2 LCC10E 7 at 10 V >1 Aluminum

501445 CERpinE

50147702 X100-7 CERpin 5 at 10 V 5…>1000 4 mm white coating

50147701 8 mm

50146101 16XA1.9-B DIL18 0.9 x 2.15 16 x 1.94 5* pA at 10 mV 250* at 0 V Optimized for csI:Tl scintillator luminescence

optional none

50146201 16XA2.6-A 1.2 x 2.15 16 x 2.58 135* at 0 V

50146301 16XA5.2-A 2.15 x 2.4 16 x 5.16 7.5* pA at 10 mV 240* at 0 V

* per element














24 First Sensor · Detectors · PSDs First Sensor · Detectors · PSDs 25

detectors: psds

The lateral effect position sensitive detector (pSD) is an opto-electronic device based on silicon PIN diode technology. The PSD converts the energy from an incident light spot into a continuous, position relative, electrical output current. This position signal is relative to the total incident light pattern and indicates the “optical centre” of the incident light.

Special features ▪ Single axis and dual axis duo-lateral pSD types▪ High position resolution▪ High linearity

Spectral response; Typ. temp. 23 °C

Series 6

Series 7

300 400 500 600 700 800 900 1000 1100

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

Wavelength [nm]

Sens

itivi

ty [A

/W]

POSITION SENSING PHOTODIODES


darkcurrent (na) dimensions

capacitance(pF)


rise time (μs)

noise limited resolution (μm)

chip package size area at 10 V at 10 V, 100 khz

at 865 nm,10 V, 50 Ω

at 632 nm,0.50 μw

500588 OD3.5-6 SO8 3.5 x 1 3.5 6.5 single axis 15 35 0.2 0.05

500073 SMD

501115 OD6-6 6.0 x 1 6 10 20 30

501278 SO16

500162 DL16-7 CERsmd 4 x 4 16 30 dual axis 15 15 0.5 0.06

500062 CERpin

501020 LCC10G*

500056 DL100-7 CERsmd 10 x 10 100 80 75 30 4.0 0.2

500054 CERpin

500952 LCC10G*

500068 DL400-7 CERsmd 20 x 20 400 800 350 100 0.3

500066 CERpin

* surface mount available with clear epoxy (E), silicone (S) and glass (G) or fused silica (Q) window













26 First Sensor · Detectors · InGaAs First Sensor · Detectors · InGaAs 27

detectors: ingaas

First Sensor offers large area InGaAs PIN diodes with up to 3 mm diameter active area. They feature low dark currents, high sensitivity up to 1700 nm wavelength and are available in a visible-band enhanced version, too.

Packages include hermetic TO cans as well as SMD type solutions. Ask us for your specific sensor solution.

Special features

▪ High sensitivity up to 1700 nm ▪ Low dark current ▪ Active areas between 0.7 and 7 mm2

Spectral response; Typ. temp. 23 °C

600 800 1000 1200 1400 1600

1

0.1

0.01

Series i

Series ix

Wavelength [nm]

Resp

onsi

vity

[A/W

]

SERIES I - InGaAs PIN DETECTORS


waveband(nm)

responsivity(a/w)

dark current (na)

capacitance (pF)

saturationpower (dbm)

chip package size area at 650 nm at 1550 nm at 5 V at 5 V at 1550 nm, 0 V

501203 pc0.7-i TO52S1 Ø 1.0 0.7 900…1700 0.05 0.95 2 70 -3

501201 LCC6.1G

501204 pc0.7-ix TO52S1 600…1700 0.3 -8

501202 LCC6.1G

501251 pc2.6-i TO5i Ø 2.0 2.6 900…1700 0.05 10 250 2

501266 pc7.1-i Ø 3.0 7.1 25 700







28 First Sensor · Emitters · Laser Diodes First Sensor · Emitters · Laser Diodes 29

600 650 700 750 800 850 900

1000

100

10

1

Peak Emission Wavelength [nm]

Opt

ical

Out

put P

ower

[mW

]

eMitters: laser diodes

Complementing the detector portfolio our emitters include a wide range of light emitting diodes and lasers for visible and infrared applications. Find both the appropriate detector and the fitting light source for your light sensing system. Laser diodes are available in the wavelength range from 635 nm to 905 nm. The large selection includes lasers with up to 100 mW single mode CW operation as well as high power multi mode lasers.

Overview of available output powers and wavelengths; Typ. temp. 23 °C

30 First Sensor · Emitters · Laser Diodes First Sensor · Emitters · Laser Diodes 31

RED LASER LInE: SIngLE MODE EMITTERS

order no. type no.peak wl λp[nm]

optical output power pop [mw]

operationcurrent lop[ma]

operationvoltage uop [V] lth [ma] FFh [deg] FFV [deg] package

at lop typ. at lop typ. typ. typ. at lop at lop

516301 LD63D4S-A/-B/-c 637 5 32 2.2 23 8.0 34 TO-18

516302 LD63D5S-A/-B/-c 635 34 30

516303 LD63F5S-A/-B/-c 637 10 45 35

516309 LD63g5S-A/-B/-c-L 639 15 50 2.3 30 9.0 30

516306 LD63h5S-A/-B/-c 20 60 8.0

516307 LD63J5S-A/-B/-c-L 40 90 2.4 50 11.0

516401 LD63K4S-A/-B/-c-L 640 60 105 40 28

516501 LD65D5S-A/-B/-c 655 5 28 2.2 21 8.0 32

516502 LD65D5S-A/-B/-c-L

516503 LD65D6S-A/-B/-c 40 30 8.5 28

516505 LD65D7S-A/-B/-c 2.3 8.0 29

516506 LD65D7S-A/-B/-c-L 27 2.15 20 27

516507 LD65E7S-A/-B/-c 7 45 2.2 30 29

516508 LD65F5S-A/-B/-c 10 36 2.3 20 30

516509 LD65F6S-A/-B/-c 60 40 9.0 28

516510 LD65F7S-A/-B/-c 25

516511 LD65I7S-A/-B/-c 658 30 65 2.4 35 9.5 22

516512 LD65I7S-A/-B/-c-h 35 75 2.2 10.0 20

516601 LD65J7S-A/-B/-c 660 60 90 2.6 45 9.0

516701 LD67D6S-A/-B/-c 670 5 50 2.3 40 11.0 32

516702 LD67D7S-A/-B/-c 30 20 9.0 28

516703 LD67F6S-A/-B/-c 10 50 40 8.0 32

516704 LD67F7S-A/-B/-c 40 20 9.0 28

516801 LD68I6S-A/-B/-c 685 30 80 2.4 35 10.5 20

516802 LD68J6S-A/-B/-c 50 100 2.7

516803 LD68g5ShF-L 680 12 50 2.4 27 7 35 TO-5

IR LASER LInE: SIngLE AnD MULTI MODE EMITTERS

order no. type no.peak wl λp[nm]

optical output power pop [mw]


operationvoltage uop [V] lth [ma] FFh [deg] FFV [deg] package

at lop typ. at lop typ. typ. typ. at lop at lop

517802 LD78c6S-A/-B/-c-L 785 3 20 1.9 13 10 28 TO-18

517803 LD78E6hg-Q# 788 6 27 1.8 14 9 31 TO-5

517804 LD78F6DF-1## 10 25 TO-18

517805 LD78F6S-A/-B/-c 22 12 8

517806 LD78I6S-A/-B/-c-L 785 30 55 2.0 20 9 22

518001 LD80R4S-A/-B/-c/-D/-E-z3* 808 200 250 1.9 60 7 35

518002 LD80R4S-A/-B/-c/-D/-E-z4*

518003 LD80S4h-A/-B/-c-y** 500 550 2.2 100 8 30 TO-5

518004 LD80T4h-A/-B/-c/-D/-E-y** 1000 1100 2.0 250 9

518302 LD83K6S-A/-B/-c 830 70 135 27 32 TO-18

518303 LD83O6S-A/-B/-c 100 220 70 10 20

518304 LD83Q6S-A/-B/-c 835 150 180 2.1 35 8 21

518501 LD85D6S-A/-B/-c 850 5 20 1.9 10 9 32

518502 LD85F6S-A/-B/-c 10 25

518503 LD85h6S-A/-B/-c 855 20 55 2.0 20

518504 LD85J6S-A/-B/-c-L 40 75 30 7 27

518601 LD86T4h-A/-B/-c/-D/-E 860 1000 1300 2.5 280 9 30 TO-5

519001 LD90F7S-A/-B/-c 905 10 35 1.8 12 10 35 TO-18

# 2 emitters ## 4 emitters * TE - mode emission ** TM- mode emission
















500002





























32 First Sensor · Emitters · LEDs First Sensor · Emitters · LEDs 33

350 400 450 500 550 600 650 700 750 800 850 900 950

25

20

15

10

5

0

Peak Emission Wavelength [nm]

Opt

ical

Out

put P

ower

[mW

]

eMitters: leds

Complementing the detector portfolio our emitters include a wide range of light emitting diodes and lasers for visible and infrared applications. Find both the appropriate detector and the fitting light source for your light sensing system.

Optimized for industrial applications these LEDs are available from 365 to 950 nm peak wavelength in a large variety of packages. Ask for our customized solutions to fit your needs.

Overview of available output powers and wavelengths; Typ. temp. 23 °C

34 First Sensor · Emitters · LEDs 35 First Sensor · Modules & Systems

LED LINE (SELECTION)

order no. type no.peak wl λp [nm]

opt. output power pop [nw]


operationvoltage uop

[V]

FWHM ∆λ [nm]

half intensity beam angle[deg] package lens

at lop typ. at lop typ. typ. at lop at lop

525213 LEDVS525N 525 0.90 20 3.50 45 ± 6 TO-18 Glass Dome

525602 LEDVS562N 562 0.15 2.30 11

525604 LEDVSC562M3A 0.25 ± 80 3 mm Ceramic Dome Epoxy

525701 LEDVS575N 574 0.30 ± 6 TO-18 Glass Dome

525705 LEDVSF575C1 0.50 ± 30 T-1 3 mm Plastic

525902 LEDVSC590M3A 590 0.90 2.10 15 ± 80 3 mm Ceramic Dome Epoxy

525903 LEDVS590N 0.50 ± 6 TO-18 Glass Dome

526103 LEDVS614N 610 1.00 2.00 17

526104 LEDVSC614M3A 1.70 ± 80 3 mm Ceramic Dome Epoxy

526403 LEDVSC644M3A 643 4.00 18

526404 LEDVS644N 3.00 ± 6 TO-18 Glass Dome

526501 LEDVSF679D3 650 0.60 2.20 20 ± 55 3.7 mm plastic LF Plastic

526603 LEDvS665M-J 660 6.00 1.80 25 ± 90 TO-46 Epoxy Dome

526614 LEDVS665TS3 12.00 50 ± 25 TO-52 Glass Window

526801 LEDVS680M 680 4.00 20 30 ± 90 TO-46 Epoxy Dome

527003 LEDVSF706N1 700 3.50 25 ± 12 T-13/4 5 mm Plastic

527402 LEDVSF741N1 740 4.00 30

527701 LEDVSF771N1 770 5.50 1.55 25

528001 LEDLSF805N5 805 20.00 50 1.40 30 ± 7

528101 LEDLSF811N5 810 18.00

528303 LEDLSF830N1 830 6.00 1.70 40 ± 15

528501 LEDLS856M2 850 20.00 1.50 20 ± 65 TO-18h Dome Epoxy, 1.0 mm

528704 LEDLS872NM25 870 14.00 1.55 45 ± 5 TO-52 Glass Dome, 1.7 mm

528710 LEDLSc872M3A-h 6.50 ± 50 3 mm Ceramic Dome Epoxy, 2.1 mm

528715 LEDLSF872n5-K 22.00 ± 7 T-13/4 5 mm Plastic

528803 LEDLSF880S1 880 11.00 1.45 60 ± 12

528810 LEDLS880LH 8.00 ± 4 TO-18 Glass Dome, 2.2 mm

528812 LEDLS880M2 13.00 ± 90 TO-18h Epoxy, 1.0 mm

529403 LEDLSF944N5 945 10.00 1.35 50 ± 7 T-13/4 5 mm Plastic

529408 LEDLS944LH 5.50 ± 4 TO-18 Glass Dome, 1.7 mm

For full list see www.first-sensor.com






























deVelopMent Modules

First Sensor offers APD modules and evaluation board modules for quadrant, duo-lateral pSD and wavelength sensitive photodiodes. They enable an easy integration into your system or a fast evaluation under lab environment.

eValuation kits

First Sensor offers complete evaluation kits including temperature compensated high voltage source and amplification to make the evaluation of our APD products as simple as possible. More evaluation kits upon request.

high Voltage sources

First Sensor offers high-voltage sources optimized for use with pIn photodiodes and APDs as well as feature minimal voltage noise and a compact design.

First Sensor · Modules & Systems · Development Modules, Evaluation Kits & High Voltage Sources 37

Modules & systeMs

First Sensor provides the necessary circuits to simplify the use of our photodiodes. Available products range from compact high voltage sources to complete evaluation boards and modules ready for integration in your system or for test runs on the lab bench.

Beyond modules First Sensor offers the capability to develop and produce complete measurement systems. For instance, our patented wireless gamma- and pET-probe Systems for sentinel lymph-node biopsy and pET-nuclide detection mark a reference solution for cancer treatment in the medical market.

hybrids

First Sensor offers compact integration of its photodiodes with amplifiers matched to the specific strengths of the detectors. Specific solutions are available on request.

36 First Sensor · Modules & Systems · Hybrids

order no. type no. transimpedance (Ω) bandwidth (Mhz)

chip package

SerIeS 8 (for 800 nm)

500002 AD230-8 TO5 2750 2000

500003 AD500-8 1000


500756 AD230-9 TO5 2750 600

500490 AD500-9 500

501386 16AA0.13-9 Ceramic 10k

501306 25AA0.04 PCB 100k 5.3

501396 10k 125


501387 AD800-10 TO8S 10k 65

order no. chip type package/board

501495 X100-7with scintillator

Gamma pulse counter Shielded module

501101 Qp45-Q Quadrant photodiode HVSD

500741 Qp50-6 SD2

500964 SD2-DIAg

500745 Qp-50-6-18 µm SD2

501110 SD2-DIAg

501104 Qp154-Q HVSD

500788 DL16-7 Position sensing device (PSD) PCBA3

500744 DL100-7

500819 DL400-7 PCBA

500008 WS7.56 Wavelengh sensitive PD

order no. chip type

50139501 AD3000-9 USB-module ApD-eval-kit

50139502 AD230-8

501306 25AA0.04-9 5 Mhz LIDAR (TOF) 25 element ApD-array-eval-kit

50146502 125 Mhz LIDAR (TOF) 25 element ApD-array-eval-kit

501476 64AA0.04-9 125 Mhz LIDAR (TOF) 64 element ApD-array-eval-kit

order no. Max. Voltage(V) ripple (mVpp

) description Feature Foot print (mm)

501385 -500 7.5 High performance HV source Ultra low ripple 45 x 29

501381 +500

501382 +200

501383 < 10 Compact HV source Small footprint 35 x 20

501384 +60 pIn-photodiode hv source Very small footprint 23 x 23







http://www.first-sensor.com/de/search/X100-7




















international

First sensor ag

peter-Behrens-Str. 1512459 BerlinGermanyT +49 30 6399 2399F +49 30 6399 [email protected]

usa

First sensor inc.

5700 Corsa Avenue, #105,Westlake Village, CA 91362USAT +1 818 706-3400F +1 818 [email protected]

Disclaimer: This catalog contains statements

with a predictive nature. This catalog does not

represent any incitement to purchase shares

of First Sensor AG, but rather is intended

exclusively for information purposes with regard

to possible future developments at the company.

All future-oriented specifications in this catalog

were produced on the basis of a probability-

based plan and represent statements regarding

the future which cannot be guaranteed.

38 First Sensor · Sales & Sales Partners

SALES & SALES PARTNERS

First Sensor · Sales & Sales Partners 39

visit full list of sales partners at www.first-sensor.com

First Sensor Locations Sales Partners

First Sensor AG peter-Behrens-Str. 15 12459 Berlin GermanyT +49 30 6399 2399 F +49 30 6399 2333 [email protected] www.first-sensor.com

First Sensor Inc. 5700 Corsa Ave #105 Westlake Village, CA 91362 USAT +1 818 706-3400F +1 818 889-7053 [email protected] www.first-sensor.com

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