和碩聯合科技 股 公司 - shopmanda pad/(08)avl/(11)battery/0b15-000j0… · 連同spec....
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和碩聯合科技(股)公司
零件規格承認書申請表
Pegatron PN 0B15-000J000
Vendor PN 8299-PRLUCMD50004
MARKING
原產地 中國昆山
使用機種
是否為安規類零件
廠商注意事項 廠商於提供和碩零件規格承認書時應以本頁為承認書封面完成填寫後請
連同 spec 轉成 PDF 檔寄回和碩
若零件屬 Non-hazardous 零件請提供 Pegatron survey form 中相關文件
(請於 SRM 首頁 - httpssrmpegatroncorpcom 下載最新版本 Pegatron
HSFsurvey form)
若零件屬安規類零件(請參考下頁列表)需另行提供附件(Safety
requirement checklist)中要求之相關證明文件
APPROVAL SHEET
Delivery Specification
CUSTOMER PEGATRON GLW PN 8299-PRLUCMD50004 MODEL LUCID-M
CUSTOMER PN 0B15-000J000 SPEC 74V 2S1P ATL-5000
ISSUED DATE 20100730 REVISED DATE 20100809
REV B
Prepared by Checked by Approved by
TO
Customer Approved
APPROVAL FOR SPECIFICATIONS ONLY APPROVAL FOR SPECIFICATIONS AND SAMPLE
財產權宣告本機密技術文件屬德臻科技股份有限公司財產所有非經本公司書面同意嚴禁影印轉載複
製外流及一切非法使用 PROPRIETARY NOTE This document contains information confidential and proprietary to GALLOPWIRE ENTERPRISE CO LTD and shall not be reproduced or transferred to other documents or disclosed to others or used for any purpose other than that for which it was obtained without the expressed written consent of GALLOPWIRE ENTERPRISE CO LTD 貴司收到本承認書後如未蒙簽回敝司於兩週內亦未提出異議將等同完成正式承認 Please sign back the Approval Sheet or the document will be in effect automatically after two weeks of delivery
S2211-02
發行紀錄表 Issue Records
發行日期 Issue Date
版本 Rev
變更說明 Revised Description
製作 Prepared
審核 Approved
20100730 A 新發行 New Issue Grace Wang Jason
20100809 B Update Product SPEC amp Outer Dimension Drawing Grace Wang Jason
CONTENTS 1 Product Specification
11 Electronic Performance5
12 Circuit Diagram 17
13 BOM18
14 PCB Layout Diagram 19
2 Mechanical Drawing
21 Inner Wiring Drawing 21
22 Outer Dimension Drawing 23
23 PCB Drawing 24
24 Package Drawing25
25 Label Drawing 26
26 Barcode Drawing 28
27 Assembly Drawing 29
3 Attachment Data
31 Battery Cell_ATL-6462B4 30
32 IC_BQ20Z45 42
33 IC_BQ29410 60
34 Fuse_D6X-050-A 76
35 TH_ESTA4103F3435F-30030SC85
36 MOSFET_SSM3K302T92
37 MOSFET_2N7002A 98
38 MOSFET_TPC8026 102
39 Connector109
4 Safety
41 CB115
42 CE116
PRODUCT SPECIFICATION
1
2 series 1 parallel ) with
2
2 cells at 5000 mAh combines with gas gauge control circuit
3
No1 5000 mAh2 5000 mAh3 4800 mAh4 Nominal Voltage 74 V5 048 A at
6 048 A at24 A at315 A at
7 84 V8 Maximum Charging Voltage 845 V
9 lt 250 mA Taper current10 4 A at11 End of Discharging Voltage 6 V
28 V12 Shutdown Voltage 56 V
28 V13 Allowable Operating Temperature
14 Storage Temperature 3 monthsOver 3 months
15 Consumption Current < 4 mA< 500 uA< 15 uA
16 30 ~ 50
0 ~ 14
15 ~ 23
24 ~ 45
Maximum Discharging Current -20 ~ 60
Tolerance plusmn 005VRated Charging Voltage
Rated Charge Current for w JEITAsystem
End of Charging Condition
Do not exceed 424V approval maximumcharging voltage each bank
Minimum CapacityMeasure capacity by 02C discharging within 1hour after 05C charging
Typical Capacity
0 ~ 50Rated Charge Current for woJEITA system
OUR MODELSPEC NO REV
Date Aug 09 2010LUCID -M
B
Charge condition
0B15-000J000
This specification shall be applied to Li-Ion rechargeable battery pack (
The battery pack consists of
Rate performanceATL 6462B4Cell
and protection control circuit
Standby (Sleep) condition
Charge State Before ShipmentShutdown condition
Stop discharging when any series cell below
Scope
RemarkItem
gas gauge (SMBus V11 interface)
Composition
Product specification
Discharge condition
Operating condition
-20~60 40~90RH -20~60 40~90RH22~28 40~90RH
Power down when any series cell below
0~45 40~90RH
Page 1
PRODUCT SPECIFICATION
4
No1
damage2 According to the
weight attached drawingsBelow 2106 g
3 Below 230 mΩ
4 Above 74 V
5 Cycle life 300 cycles Above 4000 mAh
6 Above 4250 mAh
time after standard charge
7 No leakage norprominent breakageAbove 4500 mAh constant current V 05C
8 Deep discharge No leakage nor performance prominent breakage
Above 4500 mAhuntil ECV = 84 V (Imin < 250 mA)
Open circuit voltage
Measure internal resistance within 1 hour afterquick charge
Initial internal resistance
Discharge test sample for 24 hours by
Outside appearance Visual checkNo prominent staindeformation nor
Outside dimension and Use caliper ( 05mm a division )
Test condition
Performance of pack and test condition pack
Item Standard
5 Ohm resister at 25 plusmn 2 after standardcharge Then charge by 01C at 25 plusmn 2
condition Then measure standard discharge
Carry out 300 cycles 05C charge and 05Cdischarge Then measure 05C discharge timeafter 05C charge (at 301st cycle)
9
performance
specified timeOver charge performance
for 8 hours at 25 plusmn 2
Storage the cell at 50 discharged
This test can be carried out up to threetimes if discharge time is below
discharge voltage ) at constant voltage
Measure standard discharge time andcheck outside appearance right away when this process complete
Charge sample ( after discharge till end
Measure open circuit voltage within 1 hour afterquick charging
Long time storage
Page 2
PRODUCT SPECIFICATION
9 Thermal shock No abnormal outsideAbove 4000 mAh
and check outside appearance right after rated chargeTemperature cycle90RH 60(4hrs) rarr 20(4hrs)
rarr -10(4hrs)10 No leakage
11 No rupture fire smoke nor leakage 9 V
12 No rupture fire nor leakage
13 No malfunctionlevel 4Contact plusmn 8Air plusmn 15
14 No rupture fire prominent breakage No interference for chargedischarge
15 Heat test
16 Impact test
17
5
NECD6X-050-A 12A
Leave 8 hours connecting 05C
The measured rated discharge time
Over charge (Safety test)
Protection parts
RemarkRated performance
to the battery after rated charge
Short between terminal(Safety test)
Leave battery pack shorted between
5 times of cycle test under the
power supplyat 25 plusmn 2 after rated charge
Leave in the atmosphere at 33 plusmn 3 and 85plusmn5 RH for 2 weeks after rated charging
terminal (+amp-) for 1 hour after rated
following environment shall be made
One hour continuous 4mm width
No rupture fire smokeexplosion and leakage
charge at 25 plusmn 2
Vibration for random direction with
500plusmn25g 50mm diameter steel ball droppedfrom 130cm height onto center of impact packsthree corners
According to IEC801-2(IEC 1000-4-2)
KV
Height 100cmNumber of drop 26 drops (6 faces 8 corners12 edges)Board Oak of 30mm-thick
SCP
Pack is heated in oven Temperature of oven is100plusmn2 and keep 1 week
No rupture fire smokeexplosion and leakage
KV
Function is OKHousing crack isacceptable but noallowance for insideseen and no apartoccurred by using 5Kgof opening force oncrack area and no firesmoke explosion andleakage
Iterm
Vibration test
Drop test
167Hz vibrating frequency
Electric static discharge
Leakage performance
Page 3
PRODUCT SPECIFICATION
6
V momentary or than V prohibition mode would be reset
Over discharge prohibition Recover when all cell voltages aregreater than V
V momentary or If battery pack is no voltageplease connect power supply and the voltage will be recovered
Any of cells voltage drops below Recovery when all cell voltagesmV are equal to or greater than
mV
if charge current greater than 3500 mA equal to or less than 200mA and for time less than 4 seconds time greater than 10 seconds
protection if disharge current greater than 5000 mA equal to or less than 200mA and for time less than 4 seconds time greater than 10 seconds
Charge inhibition protection Inhibit charging if temperature is less than Allow to charge when 00 temperature is equal to or
greater than
Inhibit charging if temperature is higherthan 500
below Disharge inhibition protection Inhibit discharging if temperature is higher
than 600
below
or greater than 600 below
to or greater than 650 below
Under temperature protection Stop charging if temperature is equal to Allow to charge when or below 00 temperature is equal to or
greater than
Over current protection Stop discharging if discharge currentabout 55 ~ 75 A for delay equal to or less than 5mA and time 9 ~ 31 ms time greater than 10 seconds
Short circuit protection Stop discharging if discharge currentover about 24 ~ 26 A for delay time equal to or less than 1mA and
us time greater than 10 seconds
has detected charge prohibition mode If all of cells are less
Protection function
Over charge prohibitionFunction item
Shut down circuitry and stop charging
Allow to discharge when
Recover when average current is
Pre_charge protection
Over temperature protection
Stop discharging if temperature is equal
3000
Shut down circuitry and stop discharging
41plusmn0025424plusmn001
continuously
47 ~ 50
Recover when average current is
temperature is equal to orAllow to charge when
0 ~ 3
Discharge over current Shut down circuitry and stop discharging
Shut down circuitry and stop chargingCharge over current protection
28plusmn005continuously (Possible to charge)
if any cell voltage becomes less than
(Possible to discharge)
500~1000
57 ~ 60temperature is equal to or
Control function and operation
Recover when average current is
Condition for reset
3000
3plusmn0025
In case of the cell voltage which
Recover when average current is
Allow to charge when temperature is equal to or
Allow to charge when
47 ~ 50
57 ~ 60
0 ~ 3
temperature is equal to or
if any cell voltage exceeds more than
Stop charging if temperature is equal to
Page 4
PRODUCT SPECIFICATION
Safety protection Any cell voltage exceeds Can not be recoveredV for 4 ~ 10 seconds
Any cell voltage less thanV for
Any of the cell voltages are greater than mV Current goes below
20 mA for 1800 seconds Adifference between CellVoltage 2 1 are equal to or greater than 500mV for 20 secondsAny of the cell voltages are greater than
mV Current goes greaterthan 25 mA A difference between
CellVoltage 2 1 are equal to or greater than 500 mV for 20 seconds
bq20z45 tries to turn off CHG FET andcharge current is equal to or higher than50mA for time less than 4 secondsbq20z45 tries to turn off DSG FET anddischarge current is equal to or higher than50mA for time less than 4 seconds
4~10
435 plusmn 0025
3000
2 plusmn 0025seconds
3000
Page 5
PRODUCT SPECIFICATION
7 Power gauge description
71 DescriptionThis battery pack contains specifications of Benchmarq bq20z45-R1 (SMBus-Link)
72 EEPROM data
NameVoltage
Hi Dsg Start Temp 600
2nd Level Safety
- -mVmVmV
s
OT2 Dsg Threshold 600
OT2 Dsg Time 0 s
sOT1 Dsg Recovery 600
OT1 Dsg Time 2
hex
OT1 Dsg Threshold 650
-
s
Unit
-600
2
550
Value
0
s
Unit-
mVmV
4240
mA
hex
mV
mV
shexhex
mVmV
-mA
mVmV
s
4350
4240
-
424041002800
23000
OT2 Dsg Recovery
4100
3500
HT COV Threshold
CUV Threshold
CUV Recovery
OT2 Chg Recovery
HT COV Recovery
CUV Time
AFE OC Dsg Time
OT1 Chg RecoveryOT1 Chg Time
OT2 Chg Time
96
500
550
4100
CurrentOC (1st Tier) Chg
NameVoltageLT COV Threshold
Current Recovery Time
ST COV ThresholdST COV Recovery
4350
LT SOV ThresholdST SOV ThresholdHT SOV ThresholdSOV Time
4350
TemperatureOT1 Chg Threshold
OT2 Chg Threshold
AFE SC Chg cfgAFE SC Dsg cfg
90
-Value
1003AFE OC Dsg
1st Level Safety
OC (1st Tier) Dsg
LT COV Recovery
05
0
500
5000
Page 6
PRODUCT SPECIFICATION
30003000256
020
Pre-chg Voltage ThresholdPre-chg Recovery Voltage
Pre-Charge Cfg
JT4
JT2a
-
Name
s
s
Current
7500
750
0SOT1 Dsg ThresholdSOT1 Dsg TimeSOT2 Dsg Threshold
SOT2 Chg Time650
Active CIM TimeActive CIM Check VoltagePFIN Detect Time
CIM Battery Rest TimeRest CIM Check VoltageActive CIM Fail Voltage
mVs
Rest CIM Fail VoltageRest CIM CurrentSUV Time
500
s
300050020
s
-mVmVmA
s
Unit-
-s
s-s-
smV
s
mAs
mAs-
-
mAmV
ss
mVmV
mV
1800
5
SOT2 Chg Threshold0
-
100000
500600
Temp Hys 10
JT3
Charge Control
230
JT1JT2
Value-
00150
1
2
20
20
Charge Temperature Cfg
AFE Fail LimitAFE Fail Recovery Time
Pre-Chg Current
0FET VerificationFET Fail Time
0AFE VerificationAFE Check Time
-
-
SOT2 Dsg Time
SOC Dsg TimeTemperature -
650SOT1 Chg Threshold
0
SOC Chg Time
PF SOV Fuse Blow Delay
10000
3000
SOC Dsg
PFIN Min Fuse Blow Voltage
Rest CIM Time
SOT1 Chg Time
02000
SOC Chg
SUV Threshold
3600
Page 7
PRODUCT SPECIFICATION
-
4500100
C43700
0031
315039004000
mAmAmVmAmAmAmV
3150840031503150
Cell Voltage Threshold1Cell Voltage Threshold2
4808400240024002400840031503150
ST2 Chg Voltage
-8400
LT Chg Current3
ST1 Chg Current3
LT Chg Voltage480
500037000
AS0826F43A --
mAh
mAhmWh
hexnum
Dont Care0
mVhexdate
Value-
5003700
1060807400
mAhmWhMinhex
-
smAh
-
mVmAmA
mV
mAmVmAmA
mV
-
mA
mAmVmA
Charging Faults
SBS Configuration
CF MaxError LimitCC Threshold
Manuf DateSer NumCycle Count
LT Chg Current2
FC Clear
DataRem Cap Alarm
Design Capacity
ST2 Chg Current1ST2 Chg Current2ST2 Chg Current3
Cell Blancing Cfg
Taper Voltage
10-
9595-
TCA Clear 200
Taper Current
Over Charge Capacity 960
Min Cell Deviation
Charge Fault Cfg 02
480
Cell Voltage Thresh HysTermination Cfg
ST1 Chg VoltageST1 Chg Current1ST1 Chg Current2
HT Chg VoltageHT Chg Current1HT Chg Current2HT Chg Current3
Charge Cfg
LT Chg Current1
Rem Energy Alarm
Name
Design EnergyManuf NameDevice Name
Dont Care
-
-
250
1702
mV
-mAh
Rem Time Alarm
Spec InfoDesign VoltageInit Battery Mode
Unit
Page 8
PRODUCT SPECIFICATION
--
AFEAFEState_CTL
-00
Permanent Fail Cfg 2 0001 -
--Permanent Fail Cfg
-
-1500-1000-1500
Lifetime Temp SamplesLT Temp Samples
-0
Life Max AvgDsg CurLife Max AvgDsg PowLife Avg Temp
mVmV
Lifetime Max Dsg Power
----
Deterioration Warm LimitDeterioration Fault Limit
5030
-
Value-
012924F800152070
0000
--
Unit-
-
mVmV
--
mVs
mV
Unit
-
-
0123456789ABCDEF012
-
1500-3000
39003800
300
0123456789ABCDEF012
78007600
0123456789ABCDEF0120123456789ABCDEF012
1500
250
Value
Non-Removable Cfg
Cell Life Limit
Device Chemistry
ConfigurationTDA Set
-7
TDA Clear FD Set
91
FD Clear TDA Set Volt Threshold
196000
TDA Set Volt TimeTDA Clear Volt
16200
Lifetime Max TempLifetime Min Temp
Manufacturer Info 1Manufacturer Info 2Manufacturer Info 3Manufacturer Info 4
System Data
Lifetime Data
0123456789ABCDEF0123456789ABCDE
Lifetime Max Cell VoltageLifetime Min Cell Voltage
Operation Cfg B
Lifetime Max Pack VoltageLifetime Min Pack VoltageLifetime Max Chg CurrentLifetime Max Dsg CurrentLifetime Max Chg Power
O000
-
20
Operation Cfg A
Configuration
Registers
NameManufacturer InfoManufacturer Info 0
Operation Cfg C
Name
200
-
Page 9
PRODUCT SPECIFICATION
0000--
10mWmVmA
10mW
-7317
-1000
---
mA
-822
8800
-999Avg P Last RunDelta VoltageMax Avg I Last RunMax Avg P Last Run
Cell 1 Chg dod at EoCCell 2 Chg dod at EoCCell 3 Chg dod at EoCAvg I Last Run
Sealed Ship Delay 5 s
--
-mAhmAhmAh
-mAmAmA
mAhmWh
500
-mVmAmW
Unit--
Value-1
mV
mVmA
-
2800
03
800010
Unit-
mVmV
-6000
06000
Name
Name Value
Gas Gauging
Flash Update OK VoltageShutdown VoltageCell Shutdown Voltage
Sleep CurrentCharger Present
Wake Current Reg
5000
Power
Term Voltage
Load SelectLoad Mode
IT Cfg
Dsg Current ThresholdChg Current Threshold
5025
Current Thresholds -Reserve Cap-mWh
User Rate-mA
Reserve Cap-mAh
00
Power
User Rate-mW
5518
mAhmAh
--
Unit-
500050005518
Quit CurrentState
10-
Qmax cell 0Qmax cell 1
5646
02128
Qmax cell 3Qmax PackUpdate StatusCell 0 Chg dod at EoC
Value-
PF Status
Saved PF Flags 1Saved PF Flags 2
00000000
Saved 1st PF Flags 1Saved 1st PF Flags 2
0000
NameDevice Status Data
Cell Shutdown Time 10 s
Qmax cell 2
Page 10
PRODUCT SPECIFICATION
10
---
5754-
239
-5754
0
----
----
----
---
Value-
1010
12250067291-0245
----
----
----
Unit-
Calibration
-04Ext2 Temp Offset 0
NameDataCC GainCC Delta
00Int Temp Offset
-CC Current 2000
8400Voltage Signal
Config
32250
Temp SignalCC Offset TimeADC Offset TimeCC Gain Time
2980250
1984
4012
-28285
32
-7537
-300
500
Filter
Int Max Temp
4012Int Coef 1
Current
0Int Coef 3 -11136Int Coef 4
Ext Coef 1
DeadbandCC Deadband
--
Ext Max Temp
Int Min AD
-
AFE Pack GainCC OffsetBoard Offset
Ext Coef 4
Cal Mode TimeoutTemp Model
Ext Coef 3
Ext Min AD
Ext Coef 2
0
20848
Ext1 Temp Offset
Int Coef 20
Ref Voltage
Voltage TimeTemperature Time
-
-
Page 11
PRODUCT SPECIFICATION
8 Terminal specification
No Definition IO1 PACK+ -2 PACK+ -
3 PACK+ -
4 PACK+ -
5 PACK+ -
6 NC -
7 PRES -
8 SMBD IO9 SMBC IO10 BI -11 PACK- -12 PACK- -13 PACK- -
14 PACK- -
15 PACK- -
Host PC Smart Charger and Fuel Gauge are communicate with SM Bus protocol For detailplease refer to the BQ20z45-R1 specification amp application manual supplied by TI
-
System Management Bus Clock interfaceConnect to PACK-
Power groundPower ground
--
-
Power groundPower ground
-
-
Provide battery power for system and connect to the charger circuit-
FunctionProvide battery power for system and connect to the charger circuit
Comment
Provide battery power for system and connect to the charger circuitNot connecting
Provide battery power for system and connect to the charger circuitProvide battery power for system and connect to the charger circuit
Power ground -
-
System Management Bus Data interfaceConnect to ground to enable battery function Connect to PACK-
-
----
Page 12
11
22
33
44
55
66
DD
CC
BB
AA
GA
LLO
PWIR
E EN
TERP
RISE
LTD
Title
Size
Dat
e
Des
igne
d
Chec
ked
App
rove
dR
evD
ocum
ent N
umbe
rIS
O N
umbe
rPr
ojec
t Num
ber
File
Nam
e
Shee
tO
f1
120
107
30
Pega
tron
LUCI
D-M
3F
No
551
Se
c 7
Jho
ngsia
o E
Rd
Nan
gang
Dist
rict
Taip
ei 1
15 T
aiw
anTE
L 8
86-2
-278
5609
8 FA
X 8
86-2
-278
5-57
73
S220
2SC
-PRL
UCI
W-C
C
SC-P
RLU
CIW
-CS
CHD
OC
D27
2-W
50W
B
R18
R13
R10
C16
C15
C17
C3
C4
C7
C10
C11
R3R2R1
D2
R6 TP14
VG
VH
D1
R5
C1R4
TP15
D3
JP1
12
3
F1
VP
7 6 58
4
1 2 3Q
2
C2
C12
TP19
A K
D4
R8
R9
C5
C6
C9
R7
R11
A K
D5
Q4
R20
R21
R12
R14
R15
R23 R22
R19
R24
TH1
C18
R27
R31
C22C21
TP1
TP3
TP6
TP
VP
VH
VG
Q1
P+1
P+2
P+3
P+4
P+5
NC
6
PRES
7
SMD
8
SMC
9
BI
10
P-11
P-12
P-13
P-14
P-15
J1
R30
R26
R25
D6
D7
TP2
TP20
R17
R16
C8
TP17
C14C13
TP11
TP7
TP8
C23
TP
VG
VP
VH
C24
C19
C20
R28
R29
TP22
R33
TP16
SAFE16
CHG38
VSS7
REG338
VCELL+10
VCC3
NC19
PRES12
ALERT11ZVCHG4
DSG1
PGOD5
VSS 21VSS 25VSS 28
VC5 32
VC3 34
VC4 33
VC2 35VC1 36
BAT 37
RBI 27REG25 26PFIN 15
PACK2
PMS6
SMBC18SMBD17
TOUT9
TS113
TS214
VSS 20
GSRN 23
GSRP 22
RESET 29
MRST 24
ASRP 31
ASRN 30
U1
VH
1TP
31
TP32
TP33
TP34
TP35
TP36
TP37
TP38
TP39
TP40
TP41
TP42
TP43
TP44
TP45
C25
7 6 58
4
1 2 3
Q3
VC1
8
VC2
7
VC3
6
GN
D5
VD
44
CD3
VD
D2
OU
T1
U2
76
10
層級 版本 數量 商品名稱
0 TE 10000 HSF 成品 BAT Pegatron Lucid-M 2S1P ATL-6462B4 5000mAh BQ20Z45
1 00250 LF RoHS 標識3020MM 共用 (華冠)
1 TC 10000 HSF LUCID-M SMART ATL 2S1P 5000mAh REVA
1 10000 HSF MYLAR(PI) 128123008m 單面背膠 TT-3055 RevA 聯元
1 10000 HSF MYLAR(PI霧面) 1559415044008mm單面背膠 TT-3055 RevB 聯元 TT-3055 RevB 聯元
1 10000 HSF Mylar (PC) 454001mm 單面背膠 3M-467MP REVA 聯元
1 10000 HSF Steel plate 1297501mm REVA 聯元
1 00250 HSF外箱 395395175mm REVA 呈泰
1 10000 HSF 防靜電PE袋19130005cm 榮峰
1 00250 HSF EPE托盤 380380145mm REVA 呈泰 一盤40pcs
1 00250 HSF EPE托盤蓋 38038010mm REVA 呈泰
1 00500 HSF EPE卡條 3503030mm REVA 呈泰
1 10000 HSF LUCID-M LABEL 2Cell ATL-5000mAh RevA 大偉
1 10000 HSF Polarity LABEL 2Cell ATL-5000mAH RevA 大偉
1 10000 HSF Barcodr 506mm 3M 7880 外殼上貼 RevA (達昌)
2 TB 10000 HSF LUCID-M Main ATL 2S1P 5000mAh REVA
2 20000 HSF BAT 5000mAh Polymer ATL 6462B4
2 20000 HSF NICKEL 75013mm 長條型 聯元
2 10000 HSF NOMEX 1222205013mm 單面背膠 FR750-HF RevA 港宇
3 TC 10000 HSF LUCID-M Main 2S1P REVA
3 10000 HSF SCP SEFUSE D6X-050-A 12A 136plusmn3 NEC
3 10000 HSF THTA4103F3435F-30030SC10KΩplusmn1 30mmEWAY
3 10000 HSF WIRE TO BOARD 15P 0WCGLW10001N REVA樺晟
4 10000 HSF PCB LUCID-M Main OSP REVB 上海欣奉 GLW0315B
4 10000 HSF GAUGE PROTECT IC BQ20Z45 TSSOP-38 TI
4 10000 HSF SECOND IC PROTECT BQ29410 MSOP8 TI
4 10000 HSF MOSFET SSM3K302T N_Channel 30V SOT-23 TOSHIBA
4 10000 HSF MOSFET 2N7002A-RTKH N_Channel 60V SOT-23 KEC
4 20000 HSF MOSFET TPC8026 N_CHANNEL 30V SOP-8 TOSHIBA
4 40000 HSF DIODE SWITCHING 1N4148WS SOD-323 PANJIT
4 10000 HSF DIODE ZENER AZ23C5V6P 56V SOT-23 PANJIT
4 10000 HSF DIODE ZENER BZT52-C5V6S SOD-323 PANJIT
4 20000 HSF CM 047uF 16V X7R SMD0603 TDK
4 120000 HSF CM 01uF 16V X7R SMD0402 TDK
4 30000 HSF CM01uF 50V X7R SMD0603 帶裝 SAMSUNG
4 20000 HSF CM 1uF 16V X7R SMD0603 TDK
4 10000 HSF CM 22uF 10V Y5V SMD0603 TDK
4 40000 HSF CM 22uF 16V X7R SMD0805 TDK
4 50000 HSF RES 100plusmn5 116W Chip SMD0402 UNIROYAL
4 50000 HSF RES 100plusmn5 110W Chip SMD0603 UNIROYAL
4 40000 HSF RES 1K plusmn5 116W Chip SMD0402 UNIROYAL
4 10000 HSF RES 1K plusmn5 110W Chip SMD0603 UNIROYAL
4 30000 HSF RES 100Kplusmn5 116W Chip SMD0402 UNIROYAL
4 10000 HSF RES 1Mplusmn5 116W Chip SMD0402 UNIROYAL
4 20000 HSF RES 1Mplusmn5 110W Chip SMD0603 UNIROYAL
4 20000 HSF RES 220Kplusmn5 116W Chip SMD0402 UNIROYAL
4 20000 HSF RES 3M plusmn5 110W Chip SMD0603 UNIROYAL
4 30000 HSF RES 51Kplusmn5 116W Chip SMD0402 UNIROYAL
4 10000 HSF RES 619Kplusmn1 110W Chip SMD0603 UNIROYAL
4 10000 HSF RES 845Kplusmn1 110W Chip SMD0603 UNIROYAL
4 10000 HSF RES 001plusmn1 1W Metal Film SMD2512 VISHAY
4 10000 HSF PCB BARCODE 125mm RevA華冠
商品編號
8299-PRLUCMD50004
7481-ROHS50000102
8392-LUCM14D50A01
8415-G128C3G1DA04
8415-G156F0G1DB04
8415-W04540F11A04
8421-AC9754000A04
8480-014040180A04
8480-061913R0XA08
8480-143838154004
8480-153838010A04
8480-283503030A04
8481-LUDM12CT1A11
8481-LUDMF26T1A11
8483-500600404A04
8376-LUCM14D50A01
8401-500020001104
8411-007521C00A02
8415-D12221115A03
8373-LUCM1D000A01
8410-5X0501360101
8448-11032F300A02
8464-4F0WCSX1NA26
8423-LUCM10100B02
8431-BQ20Z4513101
8431-BQ2941028101
8436-3K302T221101
8436-N7002A251103
8436-PC8026224101
8439-148WS1100104
8439-23C5V1200104
8439-C5V6S2100104
8442-0R4222000101
8442-104221000101
8442-104422000102
8442-105222000101
8442-225112000101
8442-225223000101
8449-1000J1110103
8449-1000J1220103
8449-1001J1110103
8449-1001J1220103
8449-1003J1110103
8449-1004J1110103
8449-1004J1220103
8449-2203J1110103
8449-3004J1220103
8483-120500303103
8449-5101J1110103
8449-6192F1220103
8449-8451F1220103
8449-R010F2660102
Form No QF-T-PS-02B
PRODUCT SPECIFICATION
DOC NO PS-6462B4-A REV A SHEET 4 of 15
Content
1 Scope 5
2 Model 6462B4 5
3 Specification 5
4 Battery Cell Performance Criteria 5
41 Visual inspection 5
42 Standard environmental test condition5
43 Electrical characteristics6
44 Mechanical characteristics 6
45 Environment Test6
5 Storage and Others 7
51 Long Time Storage7
52 Others 7
6 Drawing (all unit in mm not in scale) 7
Handling Precautions and Guideline8
1 Charge 8
2 Discharge 9
3 Protection Function Requirements for Battery and Host Device 9
4 Notice for Designing Battery Pack 10
5 Storage 11
6 Handling of Cells 12
7 Userrsquos Guideline for Safety Handling 14
8 Others 15
ATL
PRODUCT SPECIFICATION DOC NO PS-6462B4-A
REV A
SHEET 4 of 15
1 Scope
This document describes the Product Specification of the Lithium-ion Polymer (LIP) rechargeable battery cell supplied by ATL (Amperex Technology Limited)
2 Model 6462B4 3 Specification
No Items Specifications
1 Charge voltage 42V
2 Nominal voltage 37V
3 Minimal capacity (02C) 4800mAh 02C Discharge
4 Normal capacity (02C) 5000mAh 02C Discharge
5 Standard Charge Method 0~14degC 01C CC to 42V CV to 005C cutoff 14~23degC 05C CC to 42V CV to 005C cutoff 23~50degC 07C CC to 42V CV to 005C cutoff
6 Max Charge Current Refer standard charge method (item5)
7 Max Discharge Current 10C
8 Discharge Cut-off Voltage 30V
9 Operating Temperature Charging See item5 Discharging -20degC ~ 60degC
10 Storage Temperature -20degC ~ + 60degC in three months 25plusmn3degC over three months (see page11 in detail)
11 Cell Weight 94plusmn2g
12 Cell Dimension Length1140mm Max Width620mm Max Thickness64mm Max (Not including 8 swelling after 300cycles)
4 Battery Cell Performance Criteria
41 Visual inspection There shall be no such defect as scratch flaw crack and leakage which may adversely affect commercial value of the cell
42 Standard environmental test condition Unless otherwise specified all tests stated in this Product Specification are conducted at below condition Temperature 23 plusmn 5degC Humidity 65 plusmn 20 RH
Form No QF-T-PS-02B
ATL
PRODUCT SPECIFICATION DOC NO PS-6462B4-A
REV A
SHEET 5 of 15
43 Electrical characteristics
No Items Test Method and Condition Criteria 1 Standard
Charge
Charging the cell initially with constant current at 05C after cell voltage reach to 42V then Charge with constant voltage at 42V (accuracy 420 plusmn 005V) till charge current declines to 005C
NA
2 Minimum Rated Capacity
The capacity means the discharge capacity of the cell which is measured with discharge current of 02C with 30V cut-off voltage after the standard charge
ge4800mAh
3 Cycle Life Test condition Step1 Charge the cell at 05C to 42V Step2 Discharge the cell at 05C to 30V Step3 Repeat step1 and step2 for 300 times Measure the capacity of 1st cycle capacity at 05C discharge of Operation
300cycles ge 80
4 Self-discharge Capacity after 30 days storage measured under the same condition as Item42
Residual capacity gt 90
5 Initial Impedance
Internal resistance measured at AC 1KHz after 50 charge le 60mohm
6 Cell Voltage As of shipment 36V ~ 39 V
44 Mechanical characteristics
No Items Test Method and Condition Criteria 1 Vibration Test Cell (as of shipment) vibrated for 90 minutes for
each of the three mutually perpendicular planes with total excursion of 115mm and with frequency of 10 Hz to 55 Hz
No leakage capacity recovery rate ge 90 (Standby 3 hours)
2 Drop Test The cell is to be dropped from a height of 1 meter 2 times onto concrete ground
No explosion no fire no leakage
45 Environment Test
No Items Test Method and Condition Criteria 1 85
environment Standard charge at 25 put the cell into test device measure thickness right after stand for 4hours at 85
No swelling no leakage no fire
Form No QF-T-PS-02B
ATL
PRODUCT SPECIFICATION DOC NO PS-6462B4-A
REV A
SHEET 6 of 15
5 Storage and Others 51 Long Time Storage If the Cell is stored for a long time the cellrsquos storage voltage should be 36~39V and the cell is to be
stored in a condition as Item 42 52 Others
Any matters that this specification does not cover should be conferred between the customer and ATL
The warranty of Product Specification is 12months from the date of cell manufactured 6 Drawing (all unit in mm not in scale)
Barcode definition 1st barcode definition XXXXXXXXXXXX~XXXXXXXXXXXX as the serial No
2nd barcode definition AXXXXYYYVV XXXXmdashyear week No YYYmdashGroup VVmdashVersion
(The barcode will begin from mass production)
Items Description Dimension and Spec
T Thickness 64 mm max(Including yellow tape)
W Width 620 mm max
L Length 1140 mm max
A Positive tab to cell left edge 70plusmn12 mm
B Negative tab to cell left edge 455plusmn12 mm
C Tab width 60plusmn01 mm
D Top sealing Width 40plusmn10 mm
E Sealant Length 02 ~ 20 mm
F Tab length 85plusmn10 mm
Form No QF-T-PS-02B
ATL
PRODUCT SPECIFICATION
DOC NO PS-6462B4-A REV A SHEET 8 of 15
Appendix Handling Precautions and Guideline
For LIP (Lithium-Ion Polymer) Rechargeable Batteries Foreword
This document of Handling Precautions and Guideline for LIP Rechargeable Batteries shall be applied to the battery cells manufactured by ATL (Amperex Technology Limited)
Statement (1) Customers are requested to contact ATL in advance if and when the customer needs other applications or operating conditions than those described in this document Additional experimentation may be required to verify performance and safety under such conditions
Statement (2) ATL will take no responsibility for any accident when the cell is used under other conditions than those described in this Document
Statement (3) ATL will inform in a written form customers of improvement(s) regarding proper usage and handling of cells if it is deemed necessary
Statement (4) During designation of host device or battery pack itrsquos better for customers to get ATL involve to review the battery installation and safety protection scheme This is very helpful to safety of battery application
1 Charge 11 Charge Current
Charge current should be less than the maximum value specified in the Product Specification Charging with higher current than recommended value may cause damage to cellsrsquo electrical mechanical and safety performance and could lead to heat generation or leakage
12 Charge Voltage Charging shall be done by voltage less than that specified in the Product Specification (42Vcell) Charging beyond 425V which is the absolute maximum voltage must be strictly prohibited The charger and protection circuit of battery pack shall be designed to comply with this condition It is very dangerous that charging with higher voltage than the maximum value and may cause damage to the cell electrical mechanical safety performance and could lead to heat generation or leakage
13 Charge Temperature Batteries shall be charged at 14degC~50degC environment temperature specified in the Product Specification In case of environment temperature is lower than 14~50degC charge shall be with smaller current (recommend 01C) If the environment temperature is lower than 0degC charge shall be prohibited
14 Prohibition of Charge to 0V Cells It is prohibited to charge the cells which are with 0V voltage
Form No QF-T-PS-02B
ATL
PRODUCT SPECIFICATION
DOC NO PS-6462B4-A REV A SHEET 9 of 15
15 Prohibition of Reverse Charge Reverse charge is prohibited Cells shall be connected correctly The polarity has to be confirmed before wiring In case of the cell is connected improperly the cell cannot be charged Simultaneously the reverse charging may cause damage to the cell which may lead to degradation of cell performance and damage the cell safety and could cause heat generation or leakage
2 Discharge 21 Discharge Current
The cell shall be discharged at less than the maximum discharge current specified in the Product Specification High discharging current may reduce the discharge capacity significantly or cause over-heat
22 Discharge Temperature Cells shall be discharged at -20degC~60degC environment temperature specified in the Product Specification
23 Over-discharge It should be noted that cells would be at an over-discharged status due to self-discharge characteristics in case they were not used for a long time In order to prevent over-discharging cells shall be charged periodically to maintain the voltage between 36V and39V Over-discharging may cause the loss of cell performance characteristics or battery functions
3 Protection Function Requirements for Battery and Host Device
Battery pack and host device shall be designed with below protection function to make sure cells at a safe
usage conditions
a) Over-charge protection
b) Over-discharge protection
c) Over current protection
d) Over-heat protection
e) Short circuit protection 31 Overcharge Protection
Overcharge protection function shall be triggered and stop charging if any one of the cells of a battery pack reaches 425V The host device and battery pack shall be designed to indefinitely withstand the maximum voltage from the adapter under a single fault condition to prevent a cascading failure through the system to the battery pack andor cell
32 Over-discharge Protection When the voltage of any cell in a battery pack is lower than 25V over-discharge protection function shall work and stop discharging to prevent the cells from over-discharge It is recommended that the dissipation current of PCM shall be less than 10uA The voltage of each cell in a battery pack shall be monitored and current shall be controlled by the PCM all the time
33 Over Current Protection In case of charge current is over the limitation specified in the Product Specification the charging must be cut off The battery pack shall have at least one over current protection circuitry or devices designed to meet the specification to avoid the cell is charged with greater current than the Product Specification The host device shall be designed to indefinitely withstand the maximum current from the adapter under a single fault condition to prevent a cascading failure through the system to the battery pack andor cell
Form No QF-T-PS-02B
ATL
PRODUCT SPECIFICATION
DOC NO PS-6462B4-A REV A SHEET 10 of 15
34 The Requirements to the Components of Protection Circuit Cells components and materials used in the battery pack shall meet the minimum and maximum temperature requirements with adequate margin Protection circuit components (excluding thermal devices designed to activate at specific temperatures) shall be rated for a minimum operating range of ndash25 degC to +85 degC
35 Over Temperature Protection The battery pack or host device shall contain at least one thermal protection device or mechanism independent of internal cell devices or mechanisms For a thermistor type temperature protection circuit all packs of the same model shall have the same voltage to temperature translation (acceptable tolerance no more than plusmn10) with consideration for any temperature lag over time During charge and discharge the temperature of cells shall be monitored When temperature limitations are exceeded action shall be taken to mitigate hazards Action should include shutdown or disabling of charging or other protective action The action may be taken by the battery pack andor host
36 The Limitation of Charge Time In order to prevent abnormal cells or battery packs are charged for a long time charge time shall be limited according to the Product Specification When time limitations are exceeded action shall be taken by the host device or the battery pack to shutdown or disable the charging
37 Pre-charge Function The system shall not initiate normal charging if the battery voltage is below the over-discharge protection voltage defined in the Product Specification In this case the system may support a pre-charging function to bring the battery voltage above the required threshold The recommended pre-charge procedure is as below The cell battery pack charging shall start with a low current (le 100mA) for 15~30 minutes before rapid chargingstarts The rapid charging shall be started after the (individual)cell voltage has been reached above 3V within15~30 minutes that can be determined with the use of an appropriate timer for pre-charging In case the(individual) cell voltage does not rise to 3V within the pre-charging time then the charger shall have functionsto stop further charging and display the cellpack is at abnormal state
38 The Other Requirements to Main Device Designation 381 In case of fault happened in host device it shall not disable the safety features inside the battery pack(s) 382 The charging system or any part of the host device shall not disable or override the safety features
inside the battery pack(s) 4 Notice for Designing Battery Pack
41 Pack Design 411 Battery pack should have sufficient strength to make sure the cell(s) inside is protected from
mechanical shock 412 No sharp edge components should be inside the pack containing the battery 413 Allowances shall be made for cell and battery pack dimensional tolerance and changes throughout the
product lifetime 42 Avoid any components or conductive plate from devices to contact the edge of packing foil of cells
Form No QF-T-PS-02B
ATL
The components contact the packing foil and lead to the battery short
The components contact the packing foil edge and lead to the battery short
PRODUCT SPECIFICATION
DOC NO PS-6462B4-A REV A SHEET 11 of 15
43 Tab Connection 431 Ultrasonic welding laser welding or spot welding is recommended to connect cell(s) with PCM or
other parts 432 If use manual solder method to connect tab with PCM below notice is very important to ensure cell performance
a) The solder iron should be temperature controlled and ESD safe b) Soldering temperature should not exceed 350degC c) Soldering time should not be longer than 3s Rework times should not exceed 4 times Keep battery
tab cold down before next time soldering d) Directly heat cell body is strictly prohibited Battery may be damaged by heat above approx 100degC
44 Cell Fixing 441 The cell(s) should be fixed to the battery pack or host device on its largest surface area 442 No cell Prevention of short circuit in a battery pack or host device 443 Movement in the battery pack should be allowed
Enough insulation layers between wiring and the cells shall be used to maintain extra safety protection The battery pack or host device shall be structured with no any potential short circuit which may cause generation of smoke or firing
5 Storage The cell shall be stored at the environmental condition of -20degC~60degC and 65+-20 RH If the cell has to be storied for a long time (Over 3 months) the environmental condition should be
Temperature 25plusmn3degC Humidity 65plusmn20RH
The voltage for a long time storage shall be 36V~39V range Form No QF-T-PS-02B
ATL A Copper foil which used to screen the PCM contacts to the edge of packing foil
Any components contacting these two edges they must be insulated
PRODUCT SPECIFICATION
DOC NO PS-6462B4-A REV A SHEET 12 of 15
6 Handling of Cells Since cells are packed in soft material to ensure its better performance careful handling is very important
61 Soft Aluminium Foil The soft aluminum packing foil may be damaged by sharp matter such as Ni-tabs pins and needles or other tooling and fixtures
a) Donrsquot strike cells with any sharp matter b) Trim your nail or wear gloves before taking cells c) Clean worktable to make sure no any sharp particle
62 Top Sealing Edge Sealing edge on the top of cells is very flimsy and easy to be delaminated Donrsquot bend or fold this area
Form No QF-T-PS-02B
ATL
PRODUCT SPECIFICATION
DOC NO PS-6462B4-A REV A SHEET 13 of 15
66 Side Sealing Edge
The side sealing edge has been folded and fixed in cell forming processes and passed hermetic test The Aluminum foil may brake by re-folding time after time Donrsquot open and refold this edge
66 Tabs The cell tabs are easy to be broken especially for Aluminum tab Donrsquot bend the tabs
66 Mechanical Shock Donrsquot Fall shock bend cell body
Form No QF-T-PS-02B
ATL
PRODUCT SPECIFICATION
DOC NO PS-6462B4-A REV A SHEET 14 of 15
66 Short Short terminals of cells is strictly prohibited it may damage cells even result in safety accident
7 Userrsquos Guideline for Safety Handling
71 The following information or equivalent statements shall be made available to the user through one or more of the following means as appropriate printed on the label for the battery printed on the label for host device printed in the ownerrsquos manual or posted in a help file or Internet website Do not disassemble or open crush bend or deform puncture or shred Do not modify or remanufacture attempt to insert foreign objects into the battery immerse or expose
to water or other liquids or expose to fire explosion or other hazard Only use the battery for the system for which it was specified Only use the battery with a charging system that has been qualified with the system per standard Use
of an unqualified battery or charger may present a risk of fire explosion leakage or other hazard Do not short circuit a battery or allow metallic or conductive objects to contact the battery terminals Replace the battery only with another battery that has been qualified with the system per standard
Use of an unqualified battery may present a risk of fire explosion leakage or other hazard Donrsquot keep a battery at rest for a long time (over 6 months) Safety accident may happen when
re-charging a battery which has a rest for a long time Promptly dispose of used batteries in accordance with local regulations Battery usage by children should be supervised Avoid dropping the phone or battery If the phone or battery is dropped especially on a hard surface
and the user suspects damage take it to a service center for inspection Improper battery use may result in a fire explosion or other hazard In the event of a battery leak do not allow the liquid to come in contact with the skin or eyes If
contact has been made wash the affected area with large amounts of water and seek medical advice Seek medical advice immediately if a battery has been swallowed Communicate the appropriate steps to be taken if a hazard occurs
72 The following indications notifications and dialogmessages at the system level or an equivalent
statement may be displayed along with recommended actions as appropriate Abnormal battery temperature alert Abnormal host device andor battery dc input voltage alert Abnormal current draw alert Battery communication failtime-out alert Incompatible battery alert Alert for other malfunctions that may lead to hazards
Form No QF-T-PS-02B
ATL
PRODUCT SPECIFICATION
DOC NO PS-6462B4-A REV A SHEET 15 of 15
8 Others 81 Prohibition of Disassembly 811 Never disassemble cells The disassembling may generate internal short circuit in the cell which may
cause swelling firing or other problems 812 Electrolyte is harmful LIP battery should not have liquid from electrolyte flowing but in case the
electrolyte come into contact with the skin or eyes physicians shall flush the electrolyte immediately with fresh water and medical advice is to be sought
82 Never incinerate nor dispose the cells in fire These may cause firing of the cells which is very dangerous
and is prohibited 83 The cells shall never be soaked with liquids such as water seawater and drinks such as soft drinks juices
coffee or others
84 The battery replacement shall be done only by either cells supplier or device supplier and never be done by the user
85 Prohibition of use of damaged cells
The cells might be damaged during shipping by shock If any abnormal features of the cells are found such as damages in a plastic envelop of the cell deformation of the cell package smelling of an electrolyte an electrolyte leakage and others the cells shall never be used any more The Cells with a smell of the electrolyte or a leakage shall be placed away from fire to avoid firing
Form No QF-T-PS-02B
ATL
bq20z45-R1
wwwticom SLUS992 ndashDECEMBER 2009
SBS 11-Compliant Gas Gauge and Protection Enabled With Impedance TracktradeCheck for Samples bq20z45-R1
1FEATURESDESCRIPTION
2bull Next Generation Patented Impedance TracktradeTechnology Accurately Measures Available The bq20z45-R1 SBS-compliant gas gauge andCharge in Li-Ion and Li-Polymer Batteries protection IC is a single IC solution designed for
battery-pack or in-system installation Thendash Better Than 1 Error Over the Lifetime ofbq20z45-R1 measures and maintains an accuratethe Batteryrecord of available charge in Li-ion or Li-polymer
bull Supports the Smart Battery Specification batteries using its integrated high-performanceSBS V11 analog peripherals monitors capacity change battery
bull Flexible Configuration for 2 to 4 Series Li-Ion impedance open-circuit voltage and other criticalparameters of the battery pack as well and reportsand Li-Polymer Cellsthe information to the system host controller over abull Powerful 8-Bit RISC CPU With Ultralow Powerserial-communication bus Together with theModesintegrated analog front-end (AFE) short-circuit and
bull Full Array of Programmable Protection overload protection the bq20z45-R1 maximizesFeatures functionality and safety while minimizing external
component count cost and size in smart batteryndash Voltage Current and Temperaturecircuitsbull Satisfies JEITA GuidelinesThe implemented Impedance Tracktrade gas gaugingbull Added Flexibility to Handle More Complextechnology continuously analyzes the batteryCharging Profilesimpedance resulting in superior gas-gauging
bull Lifetime Data Logging accuracy This enables remaining capacity to bebull Supports SHA-1 Authentication calculated with discharge rate temperature and cell
aging all accounted for during each stage of everybull Complete Battery Protection and Gas Gaugecycle with high accuracySolution in One Package
bull Available in a 38-Pin TSSOP (DBT) package
APPLICATIONSbull Notebook PCsbull Medical and Test Equipmentbull Portable Instrumentation
Table 1 AVAILABLE OPTIONS
PACKAGE (1)
TA38-PIN TSSOP (DBT) Tube 38-PIN TSSOP (DBT) Tape and Reel
ndash40degC to 85degC bq20z45-R1DBT (2) bq20z45-R1DBTR (3)
(1) For the most current package and ordering information see the Package Option Addendum at the end of this document or see the TIwebsite at wwwticom
(2) A single tube quantity is 50 units(3) A single reel quantity is 2000 units
1
Please be aware that an important notice concerning availability standard warranty and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet
2Impedance Track is a trademark of Texas Instruments
PRODUCTION DATA information is current as of publication date Copyright copy 2009 Texas Instruments IncorporatedProducts conform to specifications per the terms of the TexasInstruments standard warranty Production processing does notnecessarily include testing of all parameters
Coloumb
Counter
HW OverCurrent amp
Short CircuitProtection
Cell Voltage
Multiplexer
N-Channel FETDrive
Pre Charge FETamp GPOD Drive
Power Mode
Control
SMBD
GS
RP
GS
RN
AS
RP
AS
RN
GP
OD
ZV
CH
G
CH
G
DS
G
VC5
VC4
VC3
VC2
VC1
SMBC
Cell Balancing
Temperature
Measurement
Data Flash
Memory
SMB 11
ImpedanceTrack trade
Gas Gauging
SHA-1
Authentication
Over amp UnderVoltage
Protection
Voltage
Measurement
Over Current
Protection
Oscillator
Charging
Algorithm
Fuse BlowDetection and
Logic
OverTemperature
Protection
SA
FE
PF
IN
TS
2
TS
1
TO
UT
PM
S
Watchdog
Regulators
RESET
ALERT
REG33
REG25
VCELL+
BA
T
PA
CK
VC
C
VS
S
MSRT
RBI
System Control AFE HW Control
Pack -
RSNS
5 m - 20 m typW W
Pack +
SMBC
SMBD
bq20z45ndashR1
GNDVC4
VC3
VC2
VC1 VDD
OUT
CD
bq294xx
1DSG
2PACK
3
11
VCC
ALERT
4
12
ZVCHG
PRES
5
13
6
14
PMS
TS2
7
15
VSS
PFIN
8
16
REG33
SAFE
9
17
TOUT
SMBD
10
18
19
VCELL+
SMBC
NC
CHG38
BAT37
VC1
VSS
36
28
VC2
RBI
35
27
VC3
REG25
34
26
VC4
VSS
33
25
VC5
MRST
32
24
ASRP
GSRN
31
23
ASRN
GSRP
30
22
RESET
VSS
VSS
29
21
20
GPOD
TS1
bq20z45-R1
SLUS992 ndashDECEMBER 2009 wwwticom
These devices have limited built-in ESD protection The leads should be shorted together or the device placed in conductive foamduring storage or handling to prevent electrostatic damage to the MOS gates
SYSTEM PARTITIONING DIAGRAM
bq20z45-R1DBT PACKAGE
(TOP VIEW)
2 Submit Documentation Feedback Copyright copy 2009 Texas Instruments Incorporated
Product Folder Link(s) bq20z45-R1
bq20z45-R1
wwwticom SLUS992 ndashDECEMBER 2009
PIN FUNCTIONSPIN
IO (1) DESCRIPTIONNO NAME
1 DSG O High side N-chan discharge FET gate drive
Battery pack input voltage sense input It also serves as device wake up when device is in shutdown2 PACK IA P mode
Positive device supply input Connect to the center connection of the CHG FET and DSG FET to3 VCC P ensure device supply either from battery stack or battery pack input
4 ZVCHG O P-chan pre-charge FET gate drive
High voltage general purpose open drain output Can be configured to be used in pre-charge5 GPOD OD condition
Pre-charge mode setting input Connect to PACK to enable 0v pre-charge using charge FET6 PMS I connected at CHG pin Connect to VSS to disable 0V pre-charge using charge FET connected at
CHG pin
7 VSS P Negative device power supply input Connect all VSS pins together for operation of device
8 REG33 P 33V regulator output Connect at least a 22μF capacitor to REG33 and VSS
9 TOUT P Thermistor bias supply output
10 VCELL+ - Internal cell voltage multiplexer and amplifier output Connect a 01μF capacitor to VCELL+ and VSS
Alert output In case of short circuit condition overload condition and watchdog time out this pin will11 ALERT OD be triggered
12 PRES I System Host present input
13 TS1 IA Temperature sensor 1 input
14 TS2 IA Temperature sensor 2 input
15 PFIN I Fuse blow detection input
16 SAFE OD Blow fuse signal output
17 SMBD IOD SMBus data line
18 SMBC IOD SMBus clock line
19 NC - Not connected
20 21 25 VSS P Negative device power supply input Connect all VSS pins together for operation of device28
22 GSRP IA Coulomb counter differential input Connect to one side of the sense resistor
23 GSRN IA Coulomb counter differential input Connect to one side of the sense resistor
24 MRST I Reset input for internal CPU core connect to RESET for correct operation of device
26 REG25 P 25V regulator output Connect at least a 1μF capacitor to REG25 and VSS
RAM backup input Connect a capacitor to this pin and VSS to protect loss of RAM data in case of27 RBI P short circuit condition
29 RESET O Reset output Connect to MSRT
30 ASRN IA Short circuit and overload detection differential input Connect to sense resistor
31 ASRP IA Short circuit and overload detection differential input Connect to sense resistor
Cell voltage sense input and cell balancing input for the negative voltage of the bottom cell in cell32 VC5 IA P stack
Cell voltage sense input and cell balancing input for the positive voltage of the bottom cell and the33 VC4 IA P negative voltage of the second lowest cell in cell stack
Cell voltage sense input and cell balancing input for the positive voltage of the second lowest cell in34 VC3 IA P cell stack and the negative voltage of the second highest cell in 4 cell applications
Cell voltage sense input and cell balancing input for the positive voltage of the second highest cell35 VC2 IA P and the negative voltage of the highest cell in 4 cell applications Connect to VC3 in 2 cell stack
applications
Cell voltage sense input and cell balancing input for the positive voltage of the highest cell in cell36 VC1 IA P stack in 4 cell applications Connect to VC2 in 3 or 2 cell stack applications
37 BAT I P Battery stack voltage sense input
38 CHG O High side N-chan charge FET gate drive
(1) I = Input IA = Analog input IO = Inputoutput IOD = InputOpen-drain output O = Output OA = Analog output P = Power
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ABSOLUTE MAXIMUM RATINGSover operating free-air temperature (unless otherwise noted) (1)
PIN UNIT
BAT VCC ndash03 V to 34 V
PACK PMS ndash03 V to 34 V
VSS Supply voltage range VC(n)-VC(n+1) n = 1 2 3 4 ndash03 V to 85 V
VC1 VC2 VC3 VC4 ndash03 V to 34 V
VC5 ndash03 V to 1 V
PFIN SMBD SMBC ndash03 V to 6 V
TS1 TS2 SAFE VCELL+ PRES ALERT ndash03 V to V(REG25) + 03 VVIN Input voltage range
MRST GSRN GSRP RBI ndash03 V to V(REG25) + 03 V
ASRN ASRP ndash1 V to 1 V
DSG CHG GPOD ndash03 V to 34 V
ZVCHG ndash03 V to V (BAT)
VOUT Output voltage range TOUT ALERT REG33 ndash03 V to 6 V
RESET ndash03 V to 7 V
REG25 ndash03 V to 275 V
ISS Maximum combined sink current for input pins PRES PFIN SMBD SMBC 50 mA
TA Operating free-air temperature range ndash40degC to 85degC
TF Functional temperature ndash40degC to 100degC
Tstg Storage temperature range ndash65degC to 150degC
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device These are stress ratingsonly and functional operation of the device at these or any other conditions beyond those indicated under recommended operatingconditions is not implied Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability
RECOMMENDED OPERATING CONDITIONSover operating free-air temperature range (unless otherwise noted)
PIN MIN NOM MAX UNIT
VSS Supply voltage VCC BAT 45 25 V
V(STARTUP) Minimum startup voltage VCC BAT PACK 55 V
VC(n)-VC(n+1) n = 1234 0 5 V
VC1 VC2 VC3 VC4 0 VSS V
VIN Input Voltage Range VC5 0 05 V
ASRN ASRP ndash05 05 V
PACK PMS 0 25 V
V(GPOD) Output Voltage Range GPOD 0 25 V
I(GPOD) Drain Current (1) GPOD 1 mA
C(REG25) 25V LDO Capacitor REG25 1 microF
C(REG33) 33V LDO Capacitor REG33 22 microF
C(VCELL+) Cell Voltage Output Capacitor VCELL+ 01 microF
R(PACK) PACK input block resistor (2) PACK 1 kΩ
(1) Use an external resistor to limit the current to GPOD to 1mA in high voltage application(2) Use an external resistor to limit the inrush current PACK pin required
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ELECTRICAL CHARACTERISTICSover operating free-air temperature range (unless otherwise noted) TA = ndash40degC to 85degC V(REG25) = 241 V to 259 VV(BAT) = 14 V C(REG25) = 1 microF C(REG33) = 22 microF typical values at TA = 25degC (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
I(NORMAL) Firmware running 550 microA
I(SLEEP) Sleep Mode CHG FET on DSG FET on 124 microA
CHG FET off DSG FET on 90 microA
CHG FET off DSG FET off 52 microA
I(SHUTDOWN) Shutdown Mode 01 1 microA
SHUTDOWN WAKE TA = 25degC (unless otherwise noted)
Shutdown exit at VSTARTUPI(PACK) 1 microAthreshold
SRx WAKE FROM SLEEP TA = 25degC (unless otherwise noted)
Positive or negative wakethreshold with 100 mV 225V(WAKE) 125 10 mVmV 45 mV and 9 mVprogrammable options
V (WAKE) = 1 mV -07 07I(WAKE)= 0 RSNS1 = 0 RSNS0 = 1
V(WAKE) = 225 mVI(WAKE) = 1 RSNS1 = 0 RSNS0 = 1 -08 08I(WAKE) = 0 RSNS1 = 1 RSNS0 = 0
V(WAKE_ACR) Accuracy of V(WAKE) mVV(WAKE) = 45 mVI(WAKE) = 1 RSNS1 = 1 RSNS0 = 1 -10 10I(WAKE) = 0 RSNS1 = 1 RSNS0 = 0
V(WAKE) = 9 mV -14 14I(WAKE) = 1 RSNS1 = 1 RSNS0 = 1
Temperature drift of V(WAKE)V(WAKE_TCO) 05 degCaccuracy
Time from application of currentt(WAKE) 1 10 msand wake of bq20z45-R1
POWER-ON RESET
VITndash Negative-going voltage input Voltage at REG25 pin 170 180 190 V
Vhys Hysteresis VIT+ ndash VIT- 50 150 250 mV
tRST RESET active low time active low time after power up or watchdog reset 100 250 560 micros
WATCHDOG TIMER
tWDTINT Watchdog start up detect time 250 500 1000 ms
tWDWT Watchdog detect time 50 100 150 micros
25V LDO I(REG33OUT) = 0 mA TA = 25degC (unless otherwise noted)
45 lt VCC or BAT lt 25 VV(REG25) Regulator output voltage I(REG25OUT) le 16 mA 241 25 259 V
TA = ndash40degC to 100degC
Regulator output change with I(REG25OUT) = 2 mAΔV(REG25TEMP) plusmn02 temperature TA = ndash40degC to 100degC
54 lt VCC or BAT lt 25 VΔV(REG25LINE) Line regulation 3 10 mVI(REG25OUT) = 2 mA
02 mA le I(REG25OUT) le 2 mA 7 25ΔV(REG25LOAD) Load Regulation mV
02 mA le I(REG25OUT) le 16 mA 25 50
drawing current untilI(REG25MAX) Current Limit 5 40 75 mAREG25 = 2 V to 0 V
33V LDO I(REG25OUT) = 0 mA TA = 25degC (unless otherwise noted)
45 lt VCC or BAT lt 25 VV(REG33) Regulator output voltage I(REG33OUT) le 25 mA 3 33 36 V
TA = ndash40degC to 100degC
Regulator output change with I(REG33OUT) = 2 mAΔV(REG33TEMP) plusmn02 temperature TA = ndash40degC to 100degC
54 lt VCC or BAT lt 25 VΔV(REG33LINE) Line regulation 3 10 mVI(REG33OUT) = 2 mA
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ELECTRICAL CHARACTERISTICS (continued)over operating free-air temperature range (unless otherwise noted) TA = ndash40degC to 85degC V(REG25) = 241 V to 259 VV(BAT) = 14 V C(REG25) = 1 microF C(REG33) = 22 microF typical values at TA = 25degC (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
02 mA le I(REG33OUT) le 2 mA 7 17ΔV(REG33LOAD) Load Regulation mV
02mA le I(REG33OUT) le 25 mA 40 100
drawing current until REG33 = 3 V 25 100 145I(REG33MAX) Current Limit mA
short REG33 to VSS REG33 = 0 V 12 65
THERMISTOR DRIVE
V(TOUT) Output voltage I(TOUT) = 0 mA TA = 25degC V(REG25) V
I(TOUT) = 1 mA RDS(on) = (V(REG25) - V(TOUT) ) 1 mA TA =RDS(on) TOUT pass element resistance 50 100 Ωndash40degC to 100degC
VCELL+ HIGH VOLTAGE TRANSLATION
VC(n) - VC(n+1) = 0 V 0950 0975 1TA = ndash40degC to 100degCV(VCELL+OUT)
VC(n) - VC(n+1) = 45 V 0275 03 0375TA = ndash40degC to 100degC
internal AFE reference voltage V(VCELL+REF) Translation output 0965 0975 0985 VTA = ndash40degC to 100degC
Voltage at PACK pin 098 times 102 timesV(VCELL+PACK) V(PACK)18TA = ndash40degC to 100degC V(PACK)18 V(PACK)18
Voltage at BAT pin 098 times 102 timesV(VCELL+BAT) V(BAT)18TA = ndash40degC to 100degC V(BAT)18 V(BAT)18
CMMR Common mode rejection ratio VCELL+ 40 dB
K= VCELL+ output (VC5=0V VC4=45V) - VCELL+ 0147 0150 0153output (VC5=0V VC4=0V)45K Cell scale factor K= VCELL+ output (VC2=135V VC1=18V) - VCELL+
output 0147 0150 0153(VC5=135V VC1=135V)45
Drive Current to VCELL+ VC(n) - VC(n+1) = 0V VCELL+ = 0 VI(VCELL+OUT) 12 18 μAcapacitor TA = ndash40degC to 100degC
CELL output (VC2 = VC1 = 18 V) - CELL output (VC2 =V(VCELL+O) CELL offset error -18 -1 18 mVVC1 = 0 V)
IVCnL VC(n) pin leakage current VC1 VC2 VC3 VC4 VC5 = 3 V -1 001 1 μA
CELL BALANCING
internal cell balancing FET RDS(on) for internal FET switch atR(BAL) 200 400 600 Ωresistance VDS = 2 V TA = 25degC
HARDWARE SHORT CIRCUIT AND OVERLOAD PROTECTION TA = 25degC (unless otherwise noted)
VOL = 25 mV (min) 15 25 35OL detection threshold voltageV(OL) VOL = 100 mV RSNS = 0 1 90 100 110 mVaccuracy
VOL = 205 mV (max) 185 205 225
V(SCC) = 50 mV (min) 30 50 70SCC detection thresholdV(SCC) V(SCC) = 200 mV RSNS = 0 1 180 200 220 mVvoltage accuracy
V(SCC) = 475 mV (max) 428 475 523
V(SCD) = ndash50 mV (min) ndash30 ndash50 ndash70SCD detection thresholdV(SCD) V(SCD) = ndash200 mV RSNS = 0 1 ndash180 ndash200 ndash220 mVvoltage accuracy
V(SCD) = ndash475 mV (max) ndash428 ndash475 ndash523
tda Delay time accuracy plusmn1525 μs
Protection circuit propagationtpd 50 μsdelay
FET DRIVE CIRCUIT TA = 25degC (unless otherwise noted)
V(DSGON) = V(DSG) - V(PACK)V(DSGON) DSG pin output on voltage V(GS) connect to 10 MΩ DSG and CHG on 8 12 16 V
TA = ndash40degC to 100degC
V(CHGON) = V(CHG) - V(BAT)V(CHGON) CHG pin output on voltage V(GS) = 10 MΩ DSG and CHG on 8 12 16 V
TA = ndash40degC to 100degC
V(DSGOFF) DSG pin output off voltage V(DSGOFF) = V(DSG) - V(PACK) 02 V
V(CHGOFF) CHG pin output off voltage V(CHGOFF) = V(CHG) - V(BAT) 02 V
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ELECTRICAL CHARACTERISTICS (continued)over operating free-air temperature range (unless otherwise noted) TA = ndash40degC to 85degC V(REG25) = 241 V to 259 VV(BAT) = 14 V C(REG25) = 1 microF C(REG33) = 22 microF typical values at TA = 25degC (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(CHG) V(PACK) ge V(PACK) + 4V 400 1000tr Rise time CL= 4700 pF μs
V(DSG) V(BAT) ge V(BAT) + 4V 400 1000
V(CHG) V(PACK) + V(CHGON) ge V(PACK) 40 200+ 1Vtf Fall time CL= 4700pF μsV(DSG) VC1 + V(DSGON) ge VC1 + 1V 40 200
V(ZVCHG) ZVCHG clamp voltage BAT = 45 V 33 35 37 V
LOGIC TA = ndash40degC to 100degC (unless otherwise noted)
ALERT 60 100 200R(PULLUP) Internal pullup resistance kΩ
RESET 1 3 6
ALERT 02
VOL Logic low output voltage level RESET V(BAT) = 7V V(REG25) = 15 V I (RESET) = 200 μA 04 V
GPOD I(GPOD) = 50 μA 06
LOGIC SMBC SMBD PFIN PRES SAFE ALERT
VIH High-level input voltage 20 V
VIL Low-level input voltage 08 V
VOH Output voltage high (1) IL = ndash05 mA VREG25ndash05 V
VOL Low-level output voltage PRES PFIN ALERT IL = 7 mA 04 V
CI Input capacitance 5 pF
I(SAFE) SAFE source currents SAFE active SAFE = V(REG25) ndash06 V ndash3 mA
SAFE leakage current SAFE inactive ndash02 02 microAIlkg
Input leakage current 1 microA
ADC (2)
Input voltage range TS1 TS2 using Internal Vref ndash02 1 V
Conversion time 315 ms
Resolution (no missing codes) 16 bits
Effective resolution 14 15 bits
Integral nonlinearity plusmn003 FSR (3)
Offset error (4) 140 250 microV
Offset error drift (4) TA = 25degC to 85degC 25 18 μVdegC
Full-scale error (5) plusmn01 plusmn07
Full-scale error drift 50 PPMdegC
Effective input resistance (6) 8 MΩ
COULOMB COUNTER
Input voltage range ndash020 020 V
Conversion time Single conversion 250 ms
Effective resolution Single conversion 15 bits
ndash01 V to 020 V plusmn0007 plusmn0034Integral nonlinearity FSR
ndash020 V to ndash01 V plusmn0007
Offset error (7) TA = 25degC to 85degC 10 microV
Offset error drift 04 07 microVdegC
Full-scale error (8) (9) plusmn035
Full-scale error drift 150 PPMdegC
(1) RC[07] bus(2) Unless otherwise specified the specification limits are valid at all measurement speed modes(3) Full-scale reference(4) Post-calibration performance and no IO changes during conversion with SRN as the ground reference(5) Uncalibrated performance This gain error can be eliminated with external calibration(6) The AD input is a switched-capacitor input Since the input is switched the effective input resistance is a measure of the average
resistance(7) Post-calibration performance(8) Reference voltage for the coulomb counter is typically Vref3969 at V(REG25) = 25 V TA = 25degC(9) Uncalibrated performance This gain error can be eliminated with external calibration
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ELECTRICAL CHARACTERISTICS (continued)over operating free-air temperature range (unless otherwise noted) TA = ndash40degC to 85degC V(REG25) = 241 V to 259 VV(BAT) = 14 V C(REG25) = 1 microF C(REG33) = 22 microF typical values at TA = 25degC (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Effective input resistance (10) TA = 25degC to 85degC 25 MΩ
INTERNAL TEMPERATURE SENSOR
V(TEMP) Temperature sensor voltage (11) -20 mVdegC
VOLTAGE REFERENCE
Output voltage 1215 1225 1230 V
Output voltage drift 65 PPMdegC
HIGH FREQUENCY OSCILLATOR
f(OSC) Operating frequency 4194 MHz
ndash3 025 3f(EIO) Frequency error (12) (13)
TA = 20degC to 70degC ndash2 025 2
t(SXO) Start-up time (14) 25 5 ms
LOW FREQUENCY OSCILLATOR
f(LOSC) Operating frequency 32768 kHz
ndash25 025 25f(LEIO) Frequency error (13) (15)
TA = 20degC to 70degC ndash15 025 15
t(LSXO) Start-up time (14) 500 micros
(10) The CC input is a switched capacitor input Since the input is switched the effective input resistance is a measure of the averageresistance
(11) ndash537 LSBdegC(12) The frequency error is measured from 4194 MHz(13) The frequency drift is included and measured from the trimmed frequency at V(REG25) = 25V TA = 25degC(14) The startup time is defined as the time it takes for the oscillator output frequency to be plusmn3(15) The frequency error is measured from 32768 kHz
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DATA FLASH CHARACTERISTICS OVER RECOMMENDED OPERATING TEMPERATURE ANDSUPPLY VOLTAGETypical Values at TA = 25degC and V(REG25) = 25 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Data retention 10 Years
Flash programming write-cycles 20k Cycles
t(ROWPROG) Row programming time See (1) 2 ms
t(MASSERASE) Mass-erase time 200 ms
t(PAGEERASE) Page-erase time 20 ms
I(DDPROG) Flash-write supply current 5 10 mA
I(DDERASE) Flash-erase supply current 5 10 mA
RAM BACKUP
V(RBI) gt V(RBI)MIN VREG25 lt VITndash TA = 85degC 1000 2500I(RB) RB data-retention input current nA
V(RBI) gt V(RBI)MIN VREG25 lt VITndash TA = 25degC 90 220
V(RB) RB data-retention input voltage (1) 17 V
(1) Specified by design Not production tested
SMBus TIMING CHARACTERISTICSTA = ndash40degC to 85degC Typical Values at TA = 25degC and VREG25 = 25 V (Unless Otherwise Noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
f(SMB) SMBus operating frequency Slave mode SMBC 50 duty cycle 10 100 kHz
Master mode No clock low slavef(MAS) SMBus master clock frequency 512 kHzextend
Bus free time between start and stopt(BUF) 47 micros(see Figure 1)
t(HDSTA) Hold time after (repeated) start (see Figure 1) 4 micros
t(SUSTA) Repeated start setup time (see Figure 1) 47 micros
t(SUSTO) Stop setup time (see Figure 1) 4 micros
Receive mode 0 nst(HDDAT) Data hold time (see Figure 1)
Transmit mode 300
t(SUDAT) Data setup time (see Figure 1) 250 ns
t(TIMEOUT) Error signaldetect (see Figure 1) See (1) 25 35 micros
t(LOW) Clock low period (see Figure 1) 47 micros
t(HIGH) Clock high period (see Figure 1) See (2) 4 50 micros
t(LOWSEXT) Cumulative clock low slave extend time See (3) 25 ms
Cumulative clock low master extend timet(LOWMEXT) See (4) 10 ms(see Figure 1)
tf Clockdata fall time See (5) 300 ns
tr Clockdata rise time See (6) 1000 ns
(1) The bq20z45-R1 times out when any clock low exceeds t(TIMEOUT)(2) t(HIGH) Max is the minimum bus idle time SMBC = SMBD = 1 for t gt 50 ms causes reset of any transaction involving bq20z45-R1 that
is in progress This specification is valid when the NC_SMB control bit remains in the default cleared state (CLK[0]=0)(3) t(LOWSEXT) is the cumulative time a slave device is allowed to extend the clock cycles in one message from initial start to the stop(4) t(LOWMEXT) is the cumulative time a master device is allowed to extend the clock cycles in one message from initial start to the stop(5) Rise time tr = VILMAX ndash 015) to (VIHMIN + 015)(6) Fall time tf = 09VDD to (VILMAX ndash 015)
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TLOWTR TF
THDSTA
TSUDATTHDDAT
THDSTA
TBUF
SCLK
SDATA
TSUSTO
PSSP
SCLK
SDATA
Start StopTLOWSEXT
TLOWMEXT TLOWMEXT TLOWMEXT
SCLKACKdagger SCLKACK
dagger
TSUSTATHIGH
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A SCLKACK is the acknowledge-related clock pulse generated by the master
Figure 1 SMBus Timing Diagram
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FEATURE SET
Primary (1st Level) Safety Features
The bq20z45-R1 supports a wide range of battery and system protection features that can easily be configuredThe primary safety features include
bull Cell overundervoltage protectionbull Charge and discharge overcurrentbull Short Circuitbull Charge and discharge overtemperature with independent alarms and thresholds for each thermistorbull AFE Watchdog
Secondary (2nd Level) Safety Features
The secondary safety features of the bq20z45-R1 can be used to indicate more serious faults via the SAFE (pin7) This pin can be used to blow an in-line fuse to permanently disable the battery pack from charging ordischarging The secondary safety protection features include
bull Safety overvoltagebull Safety undervoltagebull Safety overcurrent in charge and dischargebull Safety overtemperature in charge and discharge with independent alarms and thresholds for each thermistorbull Charge FET and 0 Volt Charge FET faultbull Discharge FET faultbull Cell imbalance detection (active and at rest)bull Open thermistor detectionbull AFE communication fault
Charge Control Features
The bq20z45-R1 charge control features include
bull Supports JEITA temperature ranges Reports charging voltage and charging current according to the activetemperature range
bull Handles more complex charging profiles Allows for splitting the standard temperature range into 2sub-ranges and allows for varying the charging current according to the cell voltage
bull Reports the appropriate charging current needed for constant current charging and the appropriate chargingvoltage needed for constant voltage charging to a smart charger using SMBus broadcasts
bull Determines the chemical state of charge of each battery cell using Impedance Tracktrade and can reduce thecharge difference of the battery cells in fully charged state of the battery pack gradually using cell balancingalgorithm during charging This prevents fully charged cells from overcharging and causing excessivedegradation and also increases the usable pack energy by preventing premature charge termination
bull Supports pre-chargingzero-volt chargingbull Supports charge inhibit and charge suspend if battery pack temperature is out of temperature rangebull Reports charging fault and also indicate charge status via charge and discharge alarms
Gas Gauging
The bq20z45-R1 uses the Impedance Tracktrade Technology to measure and calculate the available charge inbattery cells The achievable accuracy is better than 1 error over the lifetime of the battery and there is no fullcharge discharge learning cycle required
See Theory and Implementation of Impedance Track Battery Fuel-Gauging Algorithm application note (SLUA364)for further details
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Lifetime Data Logging Features
The bq20z45-R1 offers lifetime data logging where important measurements are stored for warranty andanalysis purposes The data monitored includebull Lifetime maximum temperaturebull Lifetime minimum temperaturebull Lifetime maximum battery cell voltagebull Lifetime minimum battery cell voltagebull Lifetime maximum battery pack voltagebull Lifetime minimum battery pack voltagebull Lifetime maximum charge currentbull Lifetime maximum discharge currentbull Lifetime maximum charge powerbull Lifetime maximum discharge powerbull Lifetime maximum average discharge currentbull Lifetime maximum average discharge powerbull Lifetime average temperature
Authentication
The bq20z45-R1 supports authentication by the host using SHA-1
Power Modes
The bq20z45-R1 supports 3 different power modes to reduce power consumption
bull In Normal Mode the bq20z45-R1 performs measurements calculations protection decisions and dataupdates in 1 second intervals Between these intervals the bq20z45-R1 is in a reduced power stage
bull In Sleep Mode the bq20z45-R1 performs measurements calculations protection decisions and data updatein adjustable time intervals Between these intervals the bq20z45-R1 is in a reduced power stage Thebq20z45-R1 has a wake function that enables exit from Sleep mode when current flow or failure is detected
bull In Shutdown Mode the bq20z45-R1 is completely disabled
CONFIGURATION
Oscillator Function
The bq20z45-R1 fully integrates the system oscillators Therefore the bq20z45-R1 requires no externalcomponents for this feature
System Present Operation
The bq20z45-R1 checks the PRES pin periodically (1s) If PRES input is pulled to ground by external system thebq20z45-R1 detects this as system present
BATTERY PARAMETER MEASUREMENTS
The bq20z45-R1 uses an integrating delta-sigma analog-to-digital converter (ADC) for current measurement anda second delta-sigma ADC for individual cell and battery voltage and temperature measurement
Charge and Discharge Counting
The integrating delta-sigma ADC measures the chargedischarge flow of the battery by measuring the voltagedrop across a small-value sense resistor between the SR1 and SR2 pins The integrating ADC measures bipolarsignals from -025 V to 025 V The bq20z45-R1 detects charge activity when VSR = V(SRP)- V(SRN)is positive anddischarge activity when VSR = V(SRP) - V(SRN) is negative The bq20z45-R1 continuously integrates the signal overtime using an internal counter The fundamental rate of the counter is 065 nVh
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Voltage
The bq20z45-R1 updates the individual series cell voltages at one second intervals The internal ADC of thebq20z45-R1 measures the voltage scales and calibrates it appropriately This data is also used to calculate theimpedance of the cell for the Impedance Tracktrade gas-gauging
Current
The bq20z45-R1 uses the SRP and SRN inputs to measure and calculate the battery charge and dischargecurrent using a 5 mΩ to 20 mΩ typ sense resistor
Auto Calibration
The bq20z45-R1 provides an auto-calibration feature to cancel the voltage offset error across SRN and SRP formaximum charge measurement accuracy The bq20z45-R1 performs auto-calibration when the SMBus lines staylow continuously for a minimum of 5 s
Temperature
The bq20z45-R1 has an internal temperature sensor and inputs for 2 external temperature sensor inputs TS1and TS2 used in conjunction with two identical NTC thermistors (default are Semitec 103AT) to sense the batteryenvironmental temperature The bq20z45-R1 can be configured to use internal or up to 2 external temperaturesensors
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COMMUNICATIONS
The bq20z45-R1 uses SMBus v11 with Master Mode and package error checking (PEC) options per the SBSspecification
SMBus On and Off State
The bq20z45-R1 detects an SMBus off state when SMBC and SMBD are logic-low for ge 2 seconds Clearing thisstate requires either SMBC or SMBD to transition high Within 1 ms the communication bus is available
SBS Commands
Table 2 SBS COMMANDS
SBS Size in Min MaxMode Name Default Value Unit
Cmd Format Bytes Value Value
0x00 RW ManufacturerAccess hex 2 0x0000 0xffff mdash mdash
0x01 RW RemainingCapacityAlarm unsigned int 2 0 65535 300 mAh or 10mWh
0x02 RW RemainingTimeAlarm unsigned int 2 0 65535 10 min
0x03 RW BatteryMode hex 2 0x0000 0xe383 mdash mdash
0x04 RW AtRate signed int 2 ndash32768 32767 mdash mA or 10mW
0x05 R AtRateTimeToFull unsigned int 2 0 65534 mdash min
0x06 R AtRateTimeToEmpty unsigned int 2 0 65534 mdash min
0x07 R AtRateOK unsigned int 2 0 65535 mdash mdash
0x08 R Temperature unsigned int 2 0 65535 mdash 01degK
0x09 R Voltage unsigned int 2 0 65535 mdash mV
0x0a R Current signed int 2 ndash32768 32767 mdash mA
0x0b R AverageCurrent signed int 2 ndash32768 32767 mdash mA
0x0c R MaxError unsigned int 1 0 100 mdash
0x0d R RelativeStateOfCharge unsigned int 1 0 100 mdash
0x0e R AbsoluteStateOfCharge unsigned int 1 0 100+ mdash
0x0f RW RemainingCapacity unsigned int 2 0 65535 mdash mAh or 10mWh
0x10 R FullChargeCapacity unsigned int 2 0 65535 mdash mAh or 10mWh
0x11 R RunTimeToEmpty unsigned int 2 0 65534 mdash min
0x12 R AverageTimeToEmpty unsigned int 2 0 65534 mdash min
0x13 R AverageTimeToFull unsigned int 2 0 65534 mdash min
0x14 R ChargingCurrent unsigned int 2 0 65534 mdash mA
0x15 R ChargingVoltage unsigned int 2 0 65534 mdash mV
0x16 R BatteryStatus unsigned int 2 0x0000 0xffff mdash mdash
0x17 RW CycleCount unsigned int 2 0 65535 mdash mdash
0x18 RW DesignCapacity unsigned int 2 0 65535 4400 mAh or 10mWh
0x19 RW DesignVoltage unsigned int 2 7000 16000 14400 mV
0x1a RW SpecificationInfo unsigned int 2 0x0000 0xffff 0x0031 mdash
0x1b RW ManufactureDate unsigned int 2 0 65535 01-Jan-1980 mdash
0x1c RW SerialNumber hex 2 0x0000 0xffff 0x0001 mdash
0x20 RW ManufacturerName String 20+1 mdash mdash Texas Inst mdash
0x21 RW DeviceName String 20+1 mdash mdash bq20z45-R1 mdash
0x22 RW DeviceChemistry String 4+1 mdash mdash LION mdash
0x23 R ManufacturerData String 14+1 mdash mdash mdash mdash
0x2f RW Authenticate String 20+1 mdash mdash mdash mdash
0x3c R CellVoltage4 unsigned int 2 0 65535 mdash mV
0x3d R CellVoltage3 unsigned int 2 0 65535 mdash mV
0x3e R CellVoltage2 unsigned int 2 0 65535 mdash mV
0x3f R CellVoltage1 unsigned int 2 0 65535 mdash mV
14 Submit Documentation Feedback Copyright copy 2009 Texas Instruments Incorporated
Product Folder Link(s) bq20z45-R1
bq20z45-R1
wwwticom SLUS992 ndashDECEMBER 2009
Table 3 EXTENDED SBS COMMANDS
SBS Cmd Size in DefaultMode Name Format Min Value Max Value UnitBytes Value
0x45 R AFEData String 11+1 mdash mdash mdash mdash
0x46 RW FETControl hex 2 0x00 0xff mdash mdash
0x4f R StateOfHealth hex 2 0x0000 0xffff mdash
0x51 R SafetyStatus hex 2 0x0000 0xffff mdash mdash
0x53 R PFStatus hex 2 0x0000 0xffff mdash mdash
0x54 R OperationStatus hex 2 0x0000 0xffff mdash mdash
0x55 R ChargingStatus hex 2 0x0000 0xffff mdash mdash
0x57 R ResetData hex 2 0x0000 0xffff mdash mdash
0x58 R WDResetData unsigned int 2 0 65535 mdash mdash
0x5a R PackVoltage unsigned int 2 0 65535 mdash mV
0x5d R AverageVoltage unsigned int 2 0 65535 mdash mV
0x5e R TS1Temperature integer 2 ndash400 1200 mdash 01degC
0x5f R TS2Temperature integer 2 ndash400 1200 mdash 01degC
0x60 RW UnSealKey hex 4 0x00000000 0xffffffff mdash mdash
0x61 RW FullAccessKey hex 4 0x00000000 0xffffffff mdash mdash
0x62 RW PFKey hex 4 0x00000000 0xffffffff mdash mdash
0x63 RW AuthenKey3 hex 4 0x00000000 0xffffffff mdash mdash
0x64 RW AuthenKey2 hex 4 0x00000000 0xffffffff mdash mdash
0x65 RW AuthenKey1 hex 4 0x00000000 0xffffffff mdash mdash
0x66 RW AuthenKey0 hex 4 0x00000000 0xffffffff mdash mdash
0x69 R SafetyStatus2 hex 2 0x0000 0x000f mdash mdash
0x6b R PFStatus2 hex 2 0x0000 0x000f mdash mdash
0x6c RW ManufBlock1 String 20 mdash mdash mdash mdash
0x6d RW ManufBlock2 String 20 mdash mdash mdash mdash
0x6e RW ManufBlock3 String 20 mdash mdash mdash mdash
0x6f RW ManufBlock4 String 20 mdash mdash mdash mdash
0x70 RW ManufacturerInfo String 31+1 mdash mdash mdash mdash
0x71 RW SenseResistor unsigned int 2 0 65535 mdash μΩ0x72 R TempRange hex 2 0x0000 0xffff mdash mdash
0x73 R LifetimeData String 32+1 mdash mdash mdash mdash
0x77 RW DataFlashSubClassID hex 2 0x0000 0xffff mdash mdash
0x78 RW DataFlashSubClassPage1 hex 32 mdash mdash mdash mdash
0x79 RW DataFlashSubClassPage2 hex 32 mdash mdash mdash mdash
0x7a RW DataFlashSubClassPage3 hex 32 mdash mdash mdash mdash
0x7b RW DataFlashSubClassPage4 hex 32 mdash mdash mdash mdash
0x7c RW DataFlashSubClassPage5 hex 32 mdash mdash mdash mdash
0x7d RW DataFlashSubClassPage6 hex 32 mdash mdash mdash mdash
0x7e RW DataFlashSubClassPage7 hex 32 mdash mdash mdash mdash
0x7f RW DataFlashSubClassPage8 hex 32 mdash mdash mdash mdash
Copyright copy 2009 Texas Instruments Incorporated Submit Documentation Feedback 15
Product Folder Link(s) bq20z45-R1
bq20z45-R1
SLUS992 ndashDECEMBER 2009 wwwticom
APPLICATION SCHEMATIC
16 Submit Documentation Feedback Copyright copy 2009 Texas Instruments Incorporated
Product Folder Link(s) bq20z45-R1
PACKAGING INFORMATION
Orderable Device Status (1) PackageType
PackageDrawing
Pins PackageQty
Eco Plan (2) LeadBall Finish MSL Peak Temp (3)
BQ20Z45DBT-R1 ACTIVE TSSOP DBT 38 50 Green (RoHS ampno SbBr)
CU NIPDAU Level-2-260C-1 YEAR
BQ20Z45DBTR-R1 ACTIVE TSSOP DBT 38 2000 Green (RoHS ampno SbBr)
CU NIPDAU Level-2-260C-1 YEAR
(1) The marketing status values are defined as followsACTIVE Product device recommended for new designsLIFEBUY TI has announced that the device will be discontinued and a lifetime-buy period is in effectNRND Not recommended for new designs Device is in production to support existing customers but TI does not recommend using this part ina new designPREVIEW Device has been announced but is not in production Samples may or may not be availableOBSOLETE TI has discontinued the production of the device
(2) Eco Plan - The planned eco-friendly classification Pb-Free (RoHS) Pb-Free (RoHS Exempt) or Green (RoHS amp no SbBr) - please checkhttpwwwticomproductcontent for the latest availability information and additional product content detailsTBD The Pb-FreeGreen conversion plan has not been definedPb-Free (RoHS) TIs terms Lead-Free or Pb-Free mean semiconductor products that are compatible with the current RoHS requirementsfor all 6 substances including the requirement that lead not exceed 01 by weight in homogeneous materials Where designed to be solderedat high temperatures TI Pb-Free products are suitable for use in specified lead-free processesPb-Free (RoHS Exempt) This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die andpackage or 2) lead-based die adhesive used between the die and leadframe The component is otherwise considered Pb-Free (RoHScompatible) as defined aboveGreen (RoHS amp no SbBr) TI defines Green to mean Pb-Free (RoHS compatible) and free of Bromine (Br) and Antimony (Sb) based flameretardants (Br or Sb do not exceed 01 by weight in homogeneous material)
(3) MSL Peak Temp -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications and peak soldertemperature
Important Information and DisclaimerThe information provided on this page represents TIs knowledge and belief as of the date that it isprovided TI bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to theaccuracy of such information Efforts are underway to better integrate information from third parties TI has taken and continues to takereasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis onincoming materials and chemicals TI and TI suppliers consider certain information to be proprietary and thus CAS numbers and other limitedinformation may not be available for release
In no event shall TIs liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TIto Customer on an annual basis
PACKAGE OPTION ADDENDUM
wwwticom 4-Jan-2010
Addendum-Page 1
IMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections modifications enhancements improvementsand other changes to its products and services at any time and to discontinue any product or service without notice Customers shouldobtain the latest relevant information before placing orders and should verify that such information is current and complete All products aresold subject to TIrsquos terms and conditions of sale supplied at the time of order acknowledgmentTI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TIrsquos standardwarranty Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty Except wheremandated by government requirements testing of all parameters of each product is not necessarily performedTI assumes no liability for applications assistance or customer product design Customers are responsible for their products andapplications using TI components To minimize the risks associated with customer products and applications customers should provideadequate design and operating safeguardsTI does not warrant or represent that any license either express or implied is granted under any TI patent right copyright mask work rightor other TI intellectual property right relating to any combination machine or process in which TI products or services are used Informationpublished by TI regarding third-party products or services does not constitute a license from TI to use such products or services or awarranty or endorsement thereof Use of such information may require a license from a third party under the patents or other intellectualproperty of the third party or a license from TI under the patents or other intellectual property of TIReproduction of TI information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompaniedby all associated warranties conditions limitations and notices Reproduction of this information with alteration is an unfair and deceptivebusiness practice TI is not responsible or liable for such altered documentation Information of third parties may be subject to additionalrestrictionsResale of TI products or services with statements different from or beyond the parameters stated by TI for that product or service voids allexpress and any implied warranties for the associated TI product or service and is an unfair and deceptive business practice TI is notresponsible or liable for any such statementsTI products are not authorized for use in safety-critical applications (such as life support) where a failure of the TI product would reasonablybe expected to cause severe personal injury or death unless officers of the parties have executed an agreement specifically governingsuch use Buyers represent that they have all necessary expertise in the safety and regulatory ramifications of their applications andacknowledge and agree that they are solely responsible for all legal regulatory and safety-related requirements concerning their productsand any use of TI products in such safety-critical applications notwithstanding any applications-related information or support that may beprovided by TI Further Buyers must fully indemnify TI and its representatives against any damages arising out of the use of TI products insuch safety-critical applicationsTI products are neither designed nor intended for use in militaryaerospace applications or environments unless the TI products arespecifically designated by TI as military-grade or enhanced plastic Only products designated by TI as military-grade meet militaryspecifications Buyers acknowledge and agree that any such use of TI products which TI has not designated as military-grade is solely atthe Buyers risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such useTI products are neither designed nor intended for use in automotive applications or environments unless the specific TI products aredesignated by TI as compliant with ISOTS 16949 requirements Buyers acknowledge and agree that if they use any non-designatedproducts in automotive applications TI will not be responsible for any failure to meet such requirementsFollowing are URLs where you can obtain information on other Texas Instruments products and application solutionsProducts ApplicationsAmplifiers amplifierticom Audio wwwticomaudioData Converters dataconverterticom Automotive wwwticomautomotiveDLPreg Products wwwdlpcom Broadband wwwticombroadbandDSP dspticom Digital Control wwwticomdigitalcontrolClocks and Timers wwwticomclocks Medical wwwticommedicalInterface interfaceticom Military wwwticommilitaryLogic logicticom Optical Networking wwwticomopticalnetworkPower Mgmt powerticom Security wwwticomsecurityMicrocontrollers microcontrollerticom Telephony wwwticomtelephonyRFID wwwti-rfidcom Video amp Imaging wwwticomvideoRFIF and ZigBeereg Solutions wwwticomlprf Wireless wwwticomwireless
Mailing Address Texas Instruments Post Office Box 655303 Dallas Texas 75265Copyright copy 2009 Texas Instruments Incorporated
1FEATURES DESCRIPTION
FUNCTION
APPLICATIONS
GND
OUT
VDD
CD
VC4
VC1
VC3
1
2 VC2
3
4 5
6
7
8
DCT PACKAGE
(TOP VIEW)
1
2
3
4
8
7
6
5
VC1
VC2
VC3
GND
OUT
VDD
CD
VC4
PW PACKAGE
(TOP VIEW)
bq29410 bq29411 bq29412 bq29413bq29414 bq29415 bq29419
wwwticom SLUS669GndashAUGUST 2005ndashREVISED AUGUST 2008
VOLTAGE PROTECTION FOR 2- 3- OR 4-CELL Li-Ion BATTERIES(2nd-LEVEL PROTECTION)
bull 2- 3- or 4-Cell Secondary Protection The bq2941x is a secondary overvoltage protectionIC for 2- 3- or 4-cell lithium-ion battery packs thatbull Low Power Consumption ICC lt 2 microAincorporates a high-accuracy precision overvoltage[VCELL(ALL) lt V(PROTECT)]detection circuit It includes a programmable delaybull Fixed High Accuracy Overvoltage Protection circuit for overvoltage detection timeThreshold
ndash bq29410 = 435 Vndash bq29411 = 440 V Each cell in a multiple-cell pack is compared to anndash bq29412 = 445 V internal reference voltage If one cell reaches an
overvoltage condition the protection sequencendash bq29413 = 450 Vbegins The bq2941x device starts charging anndash bq29414 = 455 Vexternal capacitor through the CD pin When the CD
ndash bq29415 = 460 V pin voltage reaches 12 V the OUT pin changes fromndash bq29419 = 430 V a low level to a high level
bull Programmable Delay Time of Detectionbull High Power Supply Ripple Rejectionbull Stable During Pulse Charge Operation
bull 2nd-Level Overvoltage Protection in Li-IonBattery Packs inndash Notebook Computersndash Portable Instrumentationndash Portable Equipment
1
Please be aware that an important notice concerning availability standard warranty and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet
PRODUCTION DATA information is current as of publication date Copyright copy 2005ndash2008 Texas Instruments IncorporatedProducts conform to specifications per the terms of the TexasInstruments standard warranty Production processing does notnecessarily include testing of all parameters
ABSOLUTE MAXIMUM RATINGS
PACKAGE DISSIPATION RATINGS
bq29410 bq29411 bq29412 bq29413bq29414 bq29415 bq29419
SLUS669GndashAUGUST 2005ndashREVISED AUGUST 2008 wwwticom
These devices have limited built-in ESD protection The leads should be shorted together or the device placed in conductive foamduring storage or handling to prevent electrostatic damage to the MOS gates
ORDERING INFORMATION (1)
PACKAGE (3)TA V(PROTECT)
(2)MSOP (DCT) SYMBOL SSOP (PW)
bq29419DCTR430 V CJQ bq29419PWG4 bq29419PWRG4
bq29419DCTTbq29410DCT3R
bq29410PW bq29410PWR435 V bq29410DCTR CJG bq29410PWG4 bq29410PWRG4bq29410DCTT
bq29411DCT3Rbq29411PW bq29411PWR440 V bq29411DCTR CJH bq29411PWG4 bq29411PWRG4
bq29411DCTTndash40degC to 110degC bq29412DCT3R
bq29412PW bq29412PWR445 V bq29412DCTR CJJ bq29412PWG4 bq29412PWRG4bq29412DCTTbq29413DCTR
450 V CJk bq29413PW bq29413PWRbq29413DCTTbq29414DCTR
455 V CJL bq29414PW bq29414PWRbq29414DCTTbq29415DCTR
460 V CJM bq29415PW bq29415PWRbq29415DCTT
(1) For the most current package and ordering information see the Package Option Addendum at the end of this document or see the TIwebsite at wwwticom
(2) Contact your local Texas Instruments representative or sales office for alternative overvoltage threshold options(3) The R suffix indicates tape-and-reel packaging
over operating free-air temperature range unless otherwise noted (1) (2)
UNITSupply voltage range VDD ndash03 V to 28 V
VC1 VC2 VC3 VC4 ndash03 V to 28 VInput voltage range
VC1 TO VC2 VC2 TO VC3 VC3 TO VC4 VC4 TO GND ndash03 V to 8 VOUT ndash03 V to 28 V
Output voltage rangeCD ndash03 V to 28 V
Continuous total power dissipation See Dissipation Rating TableStorage temperature range Tstg ndash65degC to 150degCLead temperature (soldering 10 s) 300degC
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device These are stress ratingsonly and functional operation of the device at these or any other conditions beyond those indicated under recommended operatingconditions is not implied Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability
(2) All voltages are with respect to ground of this device except the differential voltage of VC1-VC2 VC2-VC3 VC3-VC4 and VC4-GND
TA = 25degC DERATING FACTOR TA = 70degC TA = 85degCPACKAGE POWER RATING ABOVE TA = 25degC POWER RATING POWER RATINGDCT 412 mW 33 mWdegC 264 mW 214 mWPW 525 mW 42 mWdegC 336 mW 273 mW
2 Submit Documentation Feedback Copyright copy 2005ndash2008 Texas Instruments Incorporated
Product Folder Link(s) bq29410 bq29411 bq29412 bq29413 bq29414 bq29415 bq29419
RECOMMENDED OPERATING CONDITIONS
ELECTRICAL CHARACTERISTICS
bq29410 bq29411 bq29412 bq29413bq29414 bq29415 bq29419
wwwticom SLUS669GndashAUGUST 2005ndashREVISED AUGUST 2008
MIN NOM MAX UNITVDD Supply voltage 4 25 V
VC1 VC2 VC3 VC4 0 25VI Input voltage range V
VCn ndash VC (n=1) (n=1 2 3) VC4 ndash GND 0 5td(CD) Delay time capacitance 022 microFRIN Voltage-monitor filter resistance 100 1k ΩCIN Voltage-monitor filter capacitance 001 01 microFRVD Supply-voltage filter resistance 0 1 kΩCVD Supply-voltage filter capacitance 01 microFTA Operating ambient temperature range ndash40 110 degC
over recommended operating free-air temperature range TA = 25degC (unless otherwise noted)
PARAMETER TEST CONDITION MIN NOM MAX UNITTA = 25degC 25 35
Overvoltage detectionV(OA) TA = ndash20degC to 85degC 25 50 mVaccuracyTA = ndash40degC to 110degC 80bq29410 435bq29411 440bq29412 445
OvervoltageV(PROTECT) bq29413 450 Vdetection voltagebq29414 455bq29415 460bq29419 430bq294101112131415 320Overvoltage detectionVhys mVhysteresis bq29419 250 320 450V2 V3 VC4 input VDD = VC1IIN Input current 03 microAVC1 = VC2 = VC3 = VC4 = 35 V (see Figure 1)
Overvoltage detection delaytD1 VDD = VC1 CD = 022 microF 1 15 2 StimeI(CD_dis) CD GND clamp current VDD = VC1 CD = 1 V 5 12 microA
VDD = VC1VC1ndashVC2 = VC2ndashVC3 = VC3ndashVC4 = VC4ndashGND = 35 V 2 3(see Figure 1)
ICC Supply current microAVDD = VC1VC1ndashVC2 = VC2ndashVC3 = VC3ndashVC4 = VC4ndashGND = 23 V 15 25(see Figure 1)VC1ndashVC2 = VC2ndashVC3 = VC3ndashVC4 = VC4ndashGND = 7V(PROTECT)Max VDD = 14 V IOH = 0 mA
V(OUT) OUT pin drive voltage VVC1 = VC2 = VC3 = VC4 = V(PROTECT)Max 15 2 25VDD = 43 V TA = 0degC to 70degC IOH = 40 microAOUT = 3 V
IOH High-level output current VC1ndashVC2 = VC2ndashVC3 = VC3ndashVC4 = VC4ndashGND = ndash1 mAV(PROTECT)Max VDD = 14 VOUT = 01 V VDD = VC1IOL Low-level output current 5 microAVC1ndashVC2 = VC2ndashVC3 = VC3ndashVC4 = VC4ndashGND = 35 V
Copyright copy 2005ndash2008 Texas Instruments Incorporated Submit Documentation Feedback 3
Product Folder Link(s) bq29410 bq29411 bq29412 bq29413 bq29414 bq29415 bq29419
1
2
6
5
81
2
6
5
81
2
6
5
8
3
4
887
GNDVC4
OUT VC1
VC2
VC3
VDD
CD
GNDVC4
OUT VC1
VC2
VC3
VDD
CD
bq29410 bq29411 bq29412 bq29413bq29414 bq29415 bq29419
SLUS669GndashAUGUST 2005ndashREVISED AUGUST 2008 wwwticom
Figure 1 ICC IIN Measurement (DCT Package)
Terminal FunctionsTERMINAL
DESCRIPTIONMSOP TSSOP NAME(DCT) (PW)8 1 VC1 Sense voltage input for most positive cell7 2 VC2 Sense voltage input for second most positive cell6 3 VC3 Sense voltage input for third most positive cell5 4 GND Ground pin4 5 VC4 Sense voltage input for least positive cell3 6 CD An external capacitor is connected to determine the programmable delay time2 7 VDD Power supply1 8 OUT Output
4 Submit Documentation Feedback Copyright copy 2005ndash2008 Texas Instruments Incorporated
Product Folder Link(s) bq29410 bq29411 bq29412 bq29413 bq29414 bq29415 bq29419
VC1
VC2
VC4
VC3
GND
VDD
OUT
CD
12 V (TYP)
RVD
CVD
ICD = 02 A (TYP)
CIN
RIN
RIN
RIN
RIN
CIN
CIN
CIN
C(DELAY)
OVERVOLTAGE PROTECTION
DELAY TIME CALCULATION
td
12 V C(DELAY)
ICD
C(DELAY) td ICD
12 V
bq29410 bq29411 bq29412 bq29413bq29414 bq29415 bq29419
wwwticom SLUS669GndashAUGUST 2005ndashREVISED AUGUST 2008
FUNCTIONAL BLOCK DIAGRAM
When one of the cell voltages exceeds V(PROTECT) an internal current source begins to charge the capacitorC(DELAY) connected to the CD pin If the voltage at the CD pin VCD reaches 12 V the OUT pin is activated andtransitions high An externally connected NCH FET is activiated and blows the external fuse in the positivebattery rail see the functional block diagram
If all cell voltages fall below V(PROTECT) before the voltage at pin CD reaches 12 V the delay time does not runout An internal switch clamps the CD pin to GND and discharges the capacitor C(DELAY) and secures the fulldelay time for the next occurring overvoltage event
Once the pin OUT is activated it transitions back from high to low after all battery cells reach V(PROTECT) ndash Vhys
The delay time is calculated as follows
Where I(CD) = CD current source = 018 microA
Copyright copy 2005ndash2008 Texas Instruments Incorporated Submit Documentation Feedback 5
Product Folder Link(s) bq29410 bq29411 bq29412 bq29413 bq29414 bq29415 bq29419
V(PROTECT)
Cell Voltage(VCn - VC(n-1)
VC4 - GND)
CD
OUT
12 V
tDELAY
V(PROTECT) - Vhys
td = (12 V x CDELAY)ICD
APPLICATION INFORMATION
BATTERY CONNECTIONS
224
223
222
111
GNDVC4
OUT VC1
VC2
VC3
VDD
CD 6
5
8
GNDVC4
OUT VC1
VC2
VC3
VDD
CD 6
5
8
GNDVC4
OUT VC1
VC2
VC3
VDD
CD 6
5
8
887
1
2
6
5
81
2
6
5
81
2
6
5
8
3
4
887
GNDVC4
OUT VC1
VC2
VC3
VDD
CD
GNDVC4
OUT VC1
VC2
VC3
VDD
CD
bq29410 bq29411 bq29412 bq29413bq29414 bq29415 bq29419
SLUS669GndashAUGUST 2005ndashREVISED AUGUST 2008 wwwticom
Figure 2 Timing for Overvoltage Sensing
The following diagrams show the DCT package device in different cell configurations
Figure 3 4-Series Cell Configuration Figure 4 3-Series Cell Configuration(Connect together VC1 and VC2)
6 Submit Documentation Feedback Copyright copy 2005ndash2008 Texas Instruments Incorporated
Product Folder Link(s) bq29410 bq29411 bq29412 bq29413 bq29414 bq29415 bq29419
1
2
63
4
7
GNDVC4
OUT VC1
VC2
VC3
VDD
CD 6
5
8
7
CELL CONNECTIONS
bq29410 bq29411 bq29412 bq29413bq29414 bq29415 bq29419
wwwticom SLUS669GndashAUGUST 2005ndashREVISED AUGUST 2008
Figure 5 2-Series Cell Configuration
To prevent incorrect output activation the following connection sequences must be used
4-Series Cell Configurationbull VC1(=VDD) rarr VC2 rarr VC3 rarr VC4 rarr GND orbull GND rarr VC4 rarr VC3 rarr VC2 rarr VC1(=VDD)
3-Series Cell Configurationbull VC1(=VC2=VDD) rarr VC3 rarr VC4 rarr GND orbull GND rarr VC4 rarr VC3 rarr VC1(=VC2=VDD)
2-Series Cell Configurationbull VC1(=VC2=VC3=VDD) rarr VC4 rarr GND orbull GND rarr VC4 rarr VC1(=VC2=VC3=VDD)
Copyright copy 2005ndash2008 Texas Instruments Incorporated Submit Documentation Feedback 7
Product Folder Link(s) bq29410 bq29411 bq29412 bq29413 bq29414 bq29415 bq29419
PACKAGING INFORMATION
Orderable Device Status (1) PackageType
PackageDrawing
Pins PackageQty
Eco Plan (2) LeadBall Finish MSL Peak Temp (3)
BQ29410DCT3R ACTIVE SM8 DCT 8 3000 Pb-Free(RoHS)
CU SNBI Level-1-260C-UNLIM
BQ29410DCT3RE6 ACTIVE SM8 DCT 8 3000 Pb-Free(RoHS)
CU SNBI Level-1-260C-UNLIM
BQ29410DCTR ACTIVE SM8 DCT 8 3000 Green (RoHS ampno SbBr)
CU NIPDAU Level-1-260C-UNLIM
BQ29410DCTRG4 ACTIVE SM8 DCT 8 3000 Green (RoHS ampno SbBr)
CU NIPDAU Level-1-260C-UNLIM
BQ29410DCTT ACTIVE SM8 DCT 8 250 Green (RoHS ampno SbBr)
CU NIPDAU Level-1-260C-UNLIM
BQ29410DCTTG4 ACTIVE SM8 DCT 8 250 Green (RoHS ampno SbBr)
CU NIPDAU Level-1-260C-UNLIM
BQ29410PW ACTIVE TSSOP PW 8 150 TBD CU NIPDAU Level-1-220C-UNLIM
BQ29410PWR ACTIVE TSSOP PW 8 2000 TBD CU NIPDAU Level-1-220C-UNLIM
BQ29410PWRG4 ACTIVE TSSOP PW 8 2000 Green (RoHS ampno SbBr)
CU NIPDAU Level-2-260C-1 YEAR
BQ29411DCT3R ACTIVE SM8 DCT 8 3000 Pb-Free(RoHS)
CU SNBI Level-1-260C-UNLIM
BQ29411DCT3RE6 ACTIVE SM8 DCT 8 3000 Pb-Free(RoHS)
CU SNBI Level-1-260C-UNLIM
BQ29411DCTR ACTIVE SM8 DCT 8 3000 Green (RoHS ampno SbBr)
CU NIPDAU Level-1-260C-UNLIM
BQ29411DCTRG4 ACTIVE SM8 DCT 8 3000 Green (RoHS ampno SbBr)
CU NIPDAU Level-1-260C-UNLIM
BQ29411DCTT ACTIVE SM8 DCT 8 250 Green (RoHS ampno SbBr)
CU NIPDAU Level-1-260C-UNLIM
BQ29411DCTTG4 ACTIVE SM8 DCT 8 250 Green (RoHS ampno SbBr)
CU NIPDAU Level-1-260C-UNLIM
BQ29411PW ACTIVE TSSOP PW 8 150 TBD CU NIPDAU Level-1-220C-UNLIM
BQ29411PWR ACTIVE TSSOP PW 8 2000 TBD CU NIPDAU Level-1-220C-UNLIM
BQ29411PWRG4 ACTIVE TSSOP PW 8 2000 Green (RoHS ampno SbBr)
CU NIPDAU Level-2-260C-1 YEAR
BQ29412DCT3R ACTIVE SM8 DCT 8 3000 Pb-Free(RoHS)
CU SNBI Level-1-260C-UNLIM
BQ29412DCT3RE6 ACTIVE SM8 DCT 8 3000 Pb-Free(RoHS)
CU SNBI Level-1-260C-UNLIM
BQ29412DCT3T PREVIEW 8 TBD Call TI Call TI
BQ29412DCTR ACTIVE SM8 DCT 8 3000 Green (RoHS ampno SbBr)
CU NIPDAU Level-1-260C-UNLIM
BQ29412DCTRG4 ACTIVE SM8 DCT 8 3000 Green (RoHS ampno SbBr)
CU NIPDAU Level-1-260C-UNLIM
BQ29412DCTT ACTIVE SM8 DCT 8 250 Green (RoHS ampno SbBr)
CU NIPDAU Level-1-260C-UNLIM
BQ29412DCTTG4 ACTIVE SM8 DCT 8 250 Green (RoHS ampno SbBr)
CU NIPDAU Level-1-260C-UNLIM
BQ29412PW ACTIVE TSSOP PW 8 150 TBD CU NIPDAU Level-1-220C-UNLIM
BQ29412PWG4 ACTIVE TSSOP PW 8 150 Green (RoHS ampno SbBr)
CU NIPDAU Level-2-260C-1 YEAR
PACKAGE OPTION ADDENDUM
wwwticom 7-Mar-2009
Addendum-Page 1
Orderable Device Status (1) PackageType
PackageDrawing
Pins PackageQty
Eco Plan (2) LeadBall Finish MSL Peak Temp (3)
BQ29412PWR ACTIVE TSSOP PW 8 2000 TBD CU NIPDAU Level-1-220C-UNLIM
BQ29412PWRG4 ACTIVE TSSOP PW 8 2000 Green (RoHS ampno SbBr)
CU NIPDAU Level-2-260C-1 YEAR
BQ29413DCTR ACTIVE SM8 DCT 8 3000 Green (RoHS ampno SbBr)
CU NIPDAU Level-1-260C-UNLIM
BQ29413DCTRG4 ACTIVE SM8 DCT 8 3000 Green (RoHS ampno SbBr)
CU NIPDAU Level-1-260C-UNLIM
BQ29413DCTT ACTIVE SM8 DCT 8 250 Green (RoHS ampno SbBr)
CU NIPDAU Level-1-260C-UNLIM
BQ29413DCTTG4 ACTIVE SM8 DCT 8 250 Green (RoHS ampno SbBr)
CU NIPDAU Level-1-260C-UNLIM
BQ29413PW ACTIVE TSSOP PW 8 150 Green (RoHS ampno SbBr)
CU NIPDAU Level-2-260C-1 YEAR
BQ29413PWG4 ACTIVE TSSOP PW 8 150 Green (RoHS ampno SbBr)
CU NIPDAU Level-2-260C-1 YEAR
BQ29413PWR ACTIVE TSSOP PW 8 2000 Green (RoHS ampno SbBr)
CU NIPDAU Level-2-260C-1 YEAR
BQ29413PWRG4 ACTIVE TSSOP PW 8 2000 Green (RoHS ampno SbBr)
CU NIPDAU Level-2-260C-1 YEAR
BQ29414DCTR ACTIVE SM8 DCT 8 3000 Green (RoHS ampno SbBr)
CU NIPDAU Level-1-260C-UNLIM
BQ29414DCTRG4 ACTIVE SM8 DCT 8 3000 Green (RoHS ampno SbBr)
CU NIPDAU Level-1-260C-UNLIM
BQ29414DCTT ACTIVE SM8 DCT 8 250 Green (RoHS ampno SbBr)
CU NIPDAU Level-1-260C-UNLIM
BQ29414DCTTG4 ACTIVE SM8 DCT 8 250 Green (RoHS ampno SbBr)
CU NIPDAU Level-1-260C-UNLIM
BQ29414PW ACTIVE TSSOP PW 8 150 Green (RoHS ampno SbBr)
CU NIPDAU Level-2-260C-1 YEAR
BQ29414PWG4 ACTIVE TSSOP PW 8 150 Green (RoHS ampno SbBr)
CU NIPDAU Level-2-260C-1 YEAR
BQ29414PWR ACTIVE TSSOP PW 8 2000 Green (RoHS ampno SbBr)
CU NIPDAU Level-2-260C-1 YEAR
BQ29414PWRG4 ACTIVE TSSOP PW 8 2000 Green (RoHS ampno SbBr)
CU NIPDAU Level-2-260C-1 YEAR
BQ29415DCTR ACTIVE SM8 DCT 8 3000 Green (RoHS ampno SbBr)
CU NIPDAU Level-1-260C-UNLIM
BQ29415DCTRG4 ACTIVE SM8 DCT 8 3000 Green (RoHS ampno SbBr)
CU NIPDAU Level-1-260C-UNLIM
BQ29415DCTT ACTIVE SM8 DCT 8 250 Green (RoHS ampno SbBr)
CU NIPDAU Level-1-260C-UNLIM
BQ29415DCTTG4 ACTIVE SM8 DCT 8 250 Green (RoHS ampno SbBr)
CU NIPDAU Level-1-260C-UNLIM
BQ29415PW ACTIVE TSSOP PW 8 150 Green (RoHS ampno SbBr)
CU NIPDAU Level-2-260C-1 YEAR
BQ29415PWG4 ACTIVE TSSOP PW 8 150 Green (RoHS ampno SbBr)
CU NIPDAU Level-2-260C-1 YEAR
BQ29415PWR ACTIVE TSSOP PW 8 2000 Green (RoHS ampno SbBr)
CU NIPDAU Level-2-260C-1 YEAR
BQ29415PWRG4 ACTIVE TSSOP PW 8 2000 Green (RoHS ampno SbBr)
CU NIPDAU Level-2-260C-1 YEAR
PACKAGE OPTION ADDENDUM
wwwticom 7-Mar-2009
Addendum-Page 2
Orderable Device Status (1) PackageType
PackageDrawing
Pins PackageQty
Eco Plan (2) LeadBall Finish MSL Peak Temp (3)
BQ29419PW ACTIVE TSSOP PW 8 150 Green (RoHS ampno SbBr)
CU NIPDAU Level-2-260C-1 YEAR
BQ29419PWG4 ACTIVE TSSOP PW 8 150 Green (RoHS ampno SbBr)
CU NIPDAU Level-2-260C-1 YEAR
BQ29419PWR ACTIVE TSSOP PW 8 2000 Green (RoHS ampno SbBr)
CU NIPDAU Level-2-260C-1 YEAR
BQ29419PWRG4 ACTIVE TSSOP PW 8 2000 Green (RoHS ampno SbBr)
CU NIPDAU Level-2-260C-1 YEAR
(1) The marketing status values are defined as followsACTIVE Product device recommended for new designsLIFEBUY TI has announced that the device will be discontinued and a lifetime-buy period is in effectNRND Not recommended for new designs Device is in production to support existing customers but TI does not recommend using this part ina new designPREVIEW Device has been announced but is not in production Samples may or may not be availableOBSOLETE TI has discontinued the production of the device
(2) Eco Plan - The planned eco-friendly classification Pb-Free (RoHS) Pb-Free (RoHS Exempt) or Green (RoHS amp no SbBr) - please checkhttpwwwticomproductcontent for the latest availability information and additional product content detailsTBD The Pb-FreeGreen conversion plan has not been definedPb-Free (RoHS) TIs terms Lead-Free or Pb-Free mean semiconductor products that are compatible with the current RoHS requirementsfor all 6 substances including the requirement that lead not exceed 01 by weight in homogeneous materials Where designed to be solderedat high temperatures TI Pb-Free products are suitable for use in specified lead-free processesPb-Free (RoHS Exempt) This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die andpackage or 2) lead-based die adhesive used between the die and leadframe The component is otherwise considered Pb-Free (RoHScompatible) as defined aboveGreen (RoHS amp no SbBr) TI defines Green to mean Pb-Free (RoHS compatible) and free of Bromine (Br) and Antimony (Sb) based flameretardants (Br or Sb do not exceed 01 by weight in homogeneous material)
(3) MSL Peak Temp -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications and peak soldertemperature
Important Information and DisclaimerThe information provided on this page represents TIs knowledge and belief as of the date that it isprovided TI bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to theaccuracy of such information Efforts are underway to better integrate information from third parties TI has taken and continues to takereasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis onincoming materials and chemicals TI and TI suppliers consider certain information to be proprietary and thus CAS numbers and other limitedinformation may not be available for release
In no event shall TIs liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TIto Customer on an annual basis
PACKAGE OPTION ADDENDUM
wwwticom 7-Mar-2009
Addendum-Page 3
TAPE AND REEL INFORMATION
All dimensions are nominal
Device PackageType
PackageDrawing
Pins SPQ ReelDiameter
(mm)
ReelWidth
W1 (mm)
A0 (mm) B0 (mm) K0 (mm) P1(mm)
W(mm)
Pin1Quadrant
BQ29410DCT3R SM8 DCT 8 3000 1800 130 335 45 155 40 120 Q3
BQ29410DCTR SM8 DCT 8 3000 1800 130 335 45 155 40 120 Q3
BQ29410DCTT SM8 DCT 8 250 1800 130 335 45 155 40 120 Q3
BQ29410PWR TSSOP PW 8 2000 3300 124 70 36 16 80 120 Q1
BQ29410PWRG4 TSSOP PW 8 2000 3300 124 70 36 16 80 120 Q1
BQ29411DCT3R SM8 DCT 8 3000 1800 130 335 45 155 40 120 Q3
BQ29411DCTR SM8 DCT 8 3000 1800 130 335 45 155 40 120 Q3
BQ29411DCTT SM8 DCT 8 250 1800 130 335 45 155 40 120 Q3
BQ29411PWR TSSOP PW 8 2000 3300 124 70 36 16 80 120 Q1
BQ29411PWRG4 TSSOP PW 8 2000 3300 124 70 36 16 80 120 Q1
BQ29412DCTR SM8 DCT 8 3000 1800 130 335 45 155 40 120 Q3
BQ29412DCTT SM8 DCT 8 250 1800 130 335 45 155 40 120 Q3
BQ29412PWR TSSOP PW 8 2000 3300 124 70 36 16 80 120 Q1
BQ29412PWRG4 TSSOP PW 8 2000 3300 124 70 36 16 80 120 Q1
BQ29413DCTR SM8 DCT 8 3000 1800 130 335 45 155 40 120 Q3
BQ29413DCTT SM8 DCT 8 250 1800 130 335 45 155 40 120 Q3
BQ29413PWR TSSOP PW 8 2000 3300 124 70 36 16 80 120 Q1
BQ29414DCTR SM8 DCT 8 3000 1800 130 335 45 155 40 120 Q3
PACKAGE MATERIALS INFORMATION
wwwticom 30-Jan-2009
Pack Materials-Page 1
Device PackageType
PackageDrawing
Pins SPQ ReelDiameter
(mm)
ReelWidth
W1 (mm)
A0 (mm) B0 (mm) K0 (mm) P1(mm)
W(mm)
Pin1Quadrant
BQ29414DCTT SM8 DCT 8 250 1800 130 335 45 155 40 120 Q3
BQ29414PWR TSSOP PW 8 2000 3300 124 70 36 16 80 120 Q1
BQ29415DCTR SM8 DCT 8 3000 1800 130 335 45 155 40 120 Q3
BQ29415DCTT SM8 DCT 8 250 1800 130 335 45 155 40 120 Q3
BQ29415PWR TSSOP PW 8 2000 3300 124 70 36 16 80 120 Q1
BQ29419PWR TSSOP PW 8 2000 3300 124 70 36 16 80 120 Q1
All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
BQ29410DCT3R SM8 DCT 8 3000 1820 1820 200
BQ29410DCTR SM8 DCT 8 3000 1820 1820 200
BQ29410DCTT SM8 DCT 8 250 1820 1820 200
BQ29410PWR TSSOP PW 8 2000 3460 3460 290
BQ29410PWRG4 TSSOP PW 8 2000 3460 3460 290
BQ29411DCT3R SM8 DCT 8 3000 1820 1820 200
BQ29411DCTR SM8 DCT 8 3000 1820 1820 200
BQ29411DCTT SM8 DCT 8 250 1820 1820 200
BQ29411PWR TSSOP PW 8 2000 3460 3460 290
BQ29411PWRG4 TSSOP PW 8 2000 3460 3460 290
BQ29412DCTR SM8 DCT 8 3000 1820 1820 200
PACKAGE MATERIALS INFORMATION
wwwticom 30-Jan-2009
Pack Materials-Page 2
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
BQ29412DCTT SM8 DCT 8 250 1820 1820 200
BQ29412PWR TSSOP PW 8 2000 3460 3460 290
BQ29412PWRG4 TSSOP PW 8 2000 3460 3460 290
BQ29413DCTR SM8 DCT 8 3000 1820 1820 200
BQ29413DCTT SM8 DCT 8 250 1820 1820 200
BQ29413PWR TSSOP PW 8 2000 3460 3460 290
BQ29414DCTR SM8 DCT 8 3000 1820 1820 200
BQ29414DCTT SM8 DCT 8 250 1820 1820 200
BQ29414PWR TSSOP PW 8 2000 3460 3460 290
BQ29415DCTR SM8 DCT 8 3000 1820 1820 200
BQ29415DCTT SM8 DCT 8 250 1820 1820 200
BQ29415PWR TSSOP PW 8 2000 3460 3460 290
BQ29419PWR TSSOP PW 8 2000 3460 3460 290
PACKAGE MATERIALS INFORMATION
wwwticom 30-Jan-2009
Pack Materials-Page 3
MECHANICAL DATA
MTSS001C ndash JANUARY 1995 ndash REVISED FEBRUARY 1999
POST OFFICE BOX 655303 bull DALLAS TEXAS 75265
PW (R-PDSO-G) PLASTIC SMALL-OUTLINE PACKAGE14 PINS SHOWN
065 M010
010
025
050075
015 NOM
Gage Plane
28
980
960
24
790
770
2016
660
640
4040064F 0197
030
660620
8
019
430450
7
015
14
A
1
120 MAX
14
510
490
8
310
290
A MAX
A MIN
DIMPINS
005
490
510
Seating Plane
0degndash8deg
NOTES A All linear dimensions are in millimetersB This drawing is subject to change without noticeC Body dimensions do not include mold flash or protrusion not to exceed 015D Falls within JEDEC MO-153
MECHANICAL DATA
MPDS049B ndash MAY 1999 ndash REVISED OCTOBER 2002
POST OFFICE BOX 655303 bull DALLAS TEXAS 75265
DCT (R-PDSO-G8) PLASTIC SMALL-OUTLINE PACKAGE
CcedilCcedilCcedilCcedilCcedilCcedilCcedilCcedilCcedilCcedilCcedilCcedilCcedilCcedilCcedilCcedilCcedilCcedilCcedilCcedil
060020
025
0deg ndash 8deg
015 NOM
Gage Plane
4188781C 0902
425
5
030015
290375270
8
4
315275
1
010000
130 MAX
Seating Plane
010
M013065
PIN 1INDEX AREA
NOTES A All linear dimensions are in millimetersB This drawing is subject to change without noticeC Body dimensions do not include mold flash or protrusionD Falls within JEDEC MO-187 variation DA
IMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections modifications enhancements improvementsand other changes to its products and services at any time and to discontinue any product or service without notice Customers shouldobtain the latest relevant information before placing orders and should verify that such information is current and complete All products aresold subject to TIrsquos terms and conditions of sale supplied at the time of order acknowledgmentTI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TIrsquos standardwarranty Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty Except wheremandated by government requirements testing of all parameters of each product is not necessarily performedTI assumes no liability for applications assistance or customer product design Customers are responsible for their products andapplications using TI components To minimize the risks associated with customer products and applications customers should provideadequate design and operating safeguardsTI does not warrant or represent that any license either express or implied is granted under any TI patent right copyright mask work rightor other TI intellectual property right relating to any combination machine or process in which TI products or services are used Informationpublished by TI regarding third-party products or services does not constitute a license from TI to use such products or services or awarranty or endorsement thereof Use of such information may require a license from a third party under the patents or other intellectualproperty of the third party or a license from TI under the patents or other intellectual property of TIReproduction of TI information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompaniedby all associated warranties conditions limitations and notices Reproduction of this information with alteration is an unfair and deceptivebusiness practice TI is not responsible or liable for such altered documentation Information of third parties may be subject to additionalrestrictionsResale of TI products or services with statements different from or beyond the parameters stated by TI for that product or service voids allexpress and any implied warranties for the associated TI product or service and is an unfair and deceptive business practice TI is notresponsible or liable for any such statementsTI products are not authorized for use in safety-critical applications (such as life support) where a failure of the TI product would reasonablybe expected to cause severe personal injury or death unless officers of the parties have executed an agreement specifically governingsuch use Buyers represent that they have all necessary expertise in the safety and regulatory ramifications of their applications andacknowledge and agree that they are solely responsible for all legal regulatory and safety-related requirements concerning their productsand any use of TI products in such safety-critical applications notwithstanding any applications-related information or support that may beprovided by TI Further Buyers must fully indemnify TI and its representatives against any damages arising out of the use of TI products insuch safety-critical applicationsTI products are neither designed nor intended for use in militaryaerospace applications or environments unless the TI products arespecifically designated by TI as military-grade or enhanced plastic Only products designated by TI as military-grade meet militaryspecifications Buyers acknowledge and agree that any such use of TI products which TI has not designated as military-grade is solely atthe Buyers risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such useTI products are neither designed nor intended for use in automotive applications or environments unless the specific TI products aredesignated by TI as compliant with ISOTS 16949 requirements Buyers acknowledge and agree that if they use any non-designatedproducts in automotive applications TI will not be responsible for any failure to meet such requirementsFollowing are URLs where you can obtain information on other Texas Instruments products and application solutionsProducts ApplicationsAmplifiers amplifierticom Audio wwwticomaudioData Converters dataconverterticom Automotive wwwticomautomotiveDLPreg Products wwwdlpcom Broadband wwwticombroadbandDSP dspticom Digital Control wwwticomdigitalcontrolClocks and Timers wwwticomclocks Medical wwwticommedicalInterface interfaceticom Military wwwticommilitaryLogic logicticom Optical Networking wwwticomopticalnetworkPower Mgmt powerticom Security wwwticomsecurityMicrocontrollers microcontrollerticom Telephony wwwticomtelephonyRFID wwwti-rfidcom Video amp Imaging wwwticomvideoRFIF and ZigBeereg Solutions wwwticomlprf Wireless wwwticomwireless
Mailing Address Texas Instruments Post Office Box 655303 Dallas Texas 75265Copyright copy 2009 Texas Instruments Incorporated
2
PART NO ESTA4103F3435F-30030SC
1 APPEARANCE
1-1 DIMENSIONS
1-2 CONSTRUCTION amp MATERIAL
1-3 MARKING
No marking
2 ELECTRICAL RATINGNo Item Symbol Conditions Min Nor Max Unit
1 Resistance at Ta R 25 Ta 25 plusmn01 9900 10000 10100 ohms
2 B constant B 4099 Log(R 25 R 85 ) 3400 3435 3470 deg K
3 Dissipation constant C Ta 25 - 25 - mW
4Thermal time
constantT Thermal Bath - 15 - sec
5Operating
temperature-30 - 105
No Part Name Materials Remark1 NTC Thermistor Metal Oxide2 Coating Epoxy Resin Color Black
3 Lead Wire HF Wire 30 AWG Color Black
3
3 RELIABILITY
No Item Condition EquipmentTest
PeriodicitySampling
Size
Permittednumber ofdefectives
Performance
1High
TemperatureStorage
100 x 1000HrsAfter completion of
the test allow sampleto stand under roomtemperature for 24
hrs
DryingOven
12 months 10 1
R25R25≦
plusmn3
BB≦ plusmn 2
2Low
TemperatureStorage
-30 x 1000HrsAfter completion of
the test allow sampleto stand under roomtemperature for 24
hrs
DryingOven
12 months 10 1
R25R25≦
plusmn3
BB≦ plusmn 2
3 Humidity
4595RH x1000Hrs After
completion of thetest allow sample to
stand under roomtemperature for 24
hrs
Temperatureamp Humidity
Tester12 months 10 1
R25R25≦
plusmn3
BB≦ plusmn 2
4
ThermalShock
This cycle is repeated10 times After
completion of thetest allow sample to
stand under roomtemperature for 24
hrs
ThermalShockTester
12 months 10 1
R25R25≦
plusmn3
BB≦ plusmn 2
30min
30min
+100
-30
ordinary
temp
4
4 ORDERING INFORMATION
ES TA4 103 F 3435 F - 30 030 S C
E WAY Sensor
TA series Thermistor
Resistance (at 25)102 = 10 x 102 = 1000 ohm103 = 10 x 103 = 10000 ohm104 = 10 x 104 = 100000 ohm(102=1KΩ 103=10KΩ104=100KΩ)
R Tolerance Fplusmn1 Gplusmn2 Hplusmn3 Jplusmn5 Kplusmn10
B Value (degK)
B Tolerance Fplusmn1 Gplusmn2 Hplusmn3 Jplusmn5
Lead gauge26 = 26 AWG30 = 30 AWG
Length (Unitmm)030 = 30 mm150 = 150mm
Lead typeS SeparateC Connect UL TypeD Differ
A UL1430
B UL1571
C UL3302 HF
D UL2468
E UL2651
F UL1332 Teflon
G UL10362 Teflon
O Others
R 10000 ohms plusmn 1B 3435 degK plusmn 1
Temp Coef
MIN CENTER MAX () MIN MAX MIN MAX
-30 107666 111407 115267 -511 -336 346 -068 066
-29 102375 105878 109490 -508 -331 341 -067 065
-28 97371 100653 104034 -505 -326 336 -067 065
-27 92639 95713 98878 -502 -321 331 -066 064
-26 88163 91042 94006 -499 -316 326 -065 063
-25 83926 86624 89400 -496 -311 320 -065 063
-24 79916 82444 85044 -493 -307 315 -064 062
-23 76119 78488 80923 -490 -302 310 -063 062
-22 72522 74743 77024 -487 -297 305 -063 061
-21 69115 71197 73334 -485 -292 300 -062 060
-20 65886 67838 69840 -482 -288 295 -061 060
-19 62825 64655 66532 -479 -283 290 -061 059
-18 59922 61639 63397 -476 -278 285 -060 058
-17 57169 58779 60428 -474 -274 280 -059 058
-16 54558 56067 57613 -471 -269 276 -059 057
-15 52079 53495 54944 -468 -265 271 -058 057
-14 49727 51055 52413 -466 -260 266 -057 056
-13 47493 48738 50012 -463 -256 261 -056 055
-12 45371 46540 47733 -460 -251 257 -056 055
-11 43356 44452 45571 -458 -247 252 -055 054
-10 41440 42469 43518 -455 -242 247 -054 053
-9 39620 40584 41568 -453 -238 242 -054 053
-8 37889 38794 39717 -450 -233 238 -053 052
-7 36243 37092 37957 -447 -229 233 -052 051
-6 34677 35473 36285 -445 -225 229 -051 050
-5 33187 33934 34695 -442 -220 224 -051 050
-4 31769 32470 33183 -440 -216 220 -050 049
-3 30419 31076 31745 -437 -212 215 -049 048
-2 29133 29750 30377 -435 -207 211 -048 048
-1 27909 28488 29075 -432 -203 206 -048 047
0 26743 27285 27836 -430 -199 202 -047 046
1 25631 26140 26656 -428 -195 198 -046 046
2 24571 25049 25532 -425 -190 193 -045 045
3 23561 24009 24462 -423 -186 189 -045 044
4 22598 23017 23442 -420 -182 185 -044 043
5 21679 22072 22470 -418 -178 180 -043 043
6 20802 21171 21543 -416 -174 176 -042 042
7 19966 20311 20660 -414 -170 172 -042 041
8 19167 19490 19817 -411 -166 168 -041 040
9 18404 18707 19013 -409 -162 163 -040 040
Resistance (Ω) Resist Tolerance () Temp Tolerance ()
Resistance-Temperature Characteristics
Part No
Temperature()
ESTA4103F3435F-30030SC
5
R 10000 ohms plusmn 1B 3435 degK plusmn 1
Temp Coef
MIN CENTER MAX () MIN MAX MIN MAX
Resistance (Ω) Resist Tolerance () Temp Tolerance ()
Resistance-Temperature Characteristics
Part No
Temperature()
ESTA4103F3435F-30030SC
10 17676 17960 18246 -407 -158 159 -039 039
11 16981 17246 17513 -404 -154 155 -038 038
12 16316 16564 16814 -402 -150 151 -038 037
13 15681 15913 16147 -400 -146 147 -037 036
14 15074 15291 15509 -398 -142 143 -036 036
15 14493 14696 14900 -396 -138 139 -035 035
16 13938 14127 14318 -393 -134 135 -034 034
17 13407 13584 13762 -391 -130 131 -033 033
18 12899 13064 13230 -389 -126 127 -033 032
19 12413 12567 12721 -387 -123 123 -032 032
20 11947 12091 12235 -385 -119 119 -031 031
21 11502 11636 11770 -383 -115 115 -030 030
22 11075 11200 11325 -381 -111 111 -029 029
23 10667 10782 10898 -379 -107 108 -028 028
24 10275 10383 10491 -377 -104 104 -028 028
25 9900 10000 10100 -375 -100 100 -027 027
26 9533 9633 9733 -373 -104 104 -028 028
27 9182 9282 9382 -371 -107 108 -029 029
28 8846 8945 9045 -369 -111 111 -030 030
29 8523 8622 8721 -367 -115 115 -031 031
30 8214 8313 8411 -365 -118 119 -033 032
31 7918 8016 8114 -363 -122 122 -034 034
32 7634 7731 7828 -361 -125 126 -035 035
33 7362 7458 7554 -359 -129 130 -036 036
34 7100 7196 7291 -357 -133 133 -037 037
35 6849 6944 7039 -355 -136 137 -039 038
36 6609 6702 6796 -353 -140 140 -040 040
37 6378 6470 6563 -351 -143 144 -041 041
38 6156 6247 6340 -349 -146 148 -042 042
39 5943 6033 6125 -348 -150 151 -043 043
40 5738 5828 5918 -346 -153 155 -045 044
41 5542 5630 5719 -344 -157 158 -046 046
42 5353 5440 5528 -342 -160 162 -047 047
43 5172 5258 5345 -340 -163 165 -049 048
44 4998 5082 5168 -339 -167 169 -050 049
45 4830 4913 4998 -337 -170 172 -051 050
46 4669 4751 4834 -335 -173 175 -052 052
47 4514 4595 4677 -333 -177 179 -054 053
48 4365 4445 4526 -332 -180 182 -055 054
49 4221 4300 4380 -330 -183 186 -056 056
6
R 10000 ohms plusmn 1B 3435 degK plusmn 1
Temp Coef
MIN CENTER MAX () MIN MAX MIN MAX
Resistance (Ω) Resist Tolerance () Temp Tolerance ()
Resistance-Temperature Characteristics
Part No
Temperature()
ESTA4103F3435F-30030SC
50 4083 4161 4239 -328 -186 189 -058 057
51 3950 4027 4104 -327 -190 192 -059 058
52 3823 3898 3974 -325 -193 196 -060 059
53 3699 3773 3848 -323 -196 199 -062 061
54 3581 3654 3728 -322 -199 202 -063 062
55 3467 3538 3611 -320 -202 205 -064 063
56 3357 3427 3499 -318 -205 209 -066 065
57 3251 3320 3390 -317 -209 212 -067 066
58 3149 3217 3286 -315 -212 215 -068 067
59 3050 3117 3185 -314 -215 218 -070 068
60 2956 3021 3088 -312 -218 222 -071 070
61 2864 2929 2995 -310 -221 225 -072 071
62 2776 2840 2904 -309 -224 228 -074 072
63 2691 2753 2817 -307 -227 231 -075 074
64 2609 2670 2733 -306 -230 234 -077 075
65 2530 2590 2652 -304 -233 237 -078 077
66 2453 2513 2573 -303 -236 240 -079 078
67 2380 2438 2497 -301 -239 244 -081 079
68 2309 2366 2424 -300 -242 247 -082 081
69 2240 2296 2354 -298 -245 250 -084 082
70 2174 2229 2285 -297 -247 253 -085 083
71 2110 2164 2219 -295 -250 256 -087 085
72 2048 2101 2155 -294 -253 259 -088 086
73 1988 2040 2094 -292 -256 262 -090 088
74 1930 1982 2034 -291 -259 265 -091 089
75 1875 1925 1977 -289 -262 268 -093 090
76 1821 1870 1921 -288 -265 271 -094 092
77 1769 1817 1867 -287 -267 274 -095 093
78 1718 1766 1815 -285 -270 277 -097 095
79 1670 1717 1765 -284 -273 280 -098 096
80 1623 1669 1716 -282 -276 282 -100 098
81 1577 1622 1669 -281 -278 285 -102 099
82 1533 1577 1623 -280 -281 288 -103 101
83 1490 1534 1579 -278 -284 291 -105 102
84 1449 1492 1536 -277 -287 294 -106 103
85 1409 1451 1494 -276 -289 297 -108 105
86 1371 1412 1454 -274 -292 300 -109 106
87 1333 1374 1415 -273 -295 302 -111 108
88 1297 1337 1378 -272 -297 305 -112 109
89 1262 1301 1341 -270 -300 308 -114 111
7
R 10000 ohms plusmn 1B 3435 degK plusmn 1
Temp Coef
MIN CENTER MAX () MIN MAX MIN MAX
Resistance (Ω) Resist Tolerance () Temp Tolerance ()
Resistance-Temperature Characteristics
Part No
Temperature()
ESTA4103F3435F-30030SC
90 1228 1267 1306 -269 -302 311 -115 112
91 1195 1233 1272 -268 -305 314 -117 114
92 1164 1200 1238 -267 -308 316 -119 115
93 1133 1169 1206 -265 -310 319 -120 117
94 1103 1138 1175 -264 -313 322 -122 118
95 1074 1109 1145 -263 -315 325 -123 120
96 1046 1080 1115 -262 -318 327 -125 122
97 1019 1052 1087 -260 -320 330 -127 123
98 992 1025 1059 -259 -323 333 -128 125
99 967 999 1033 -258 -325 335 -130 126
100 942 974 1007 -257 -328 338 -132 128
101 918 949 981 -256 -330 341 -133 129
102 894 925 957 -254 -333 343 -135 131
103 872 902 933 -253 -335 346 -137 132
104 850 880 910 -252 -338 349 -138 134
105 829 858 888 -251 -340 351 -140 136
8
SSM3K302T
2007-11-01 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K302T Power Management Switch Applications High Speed Switching Applications bull 18 V drive bull Low ON-resistance Ron = 131 mΩ (max) (VGS = 18V) Ron = 87mΩ (max) (VGS = 25V) Ron = 71 mΩ (max) (VGS = 40V)
Absolute Maximum Ratings (Ta = 25degC) Characteristic Symbol Rating Unit
Drainndashsource voltage VDS 30 V
Gatendashsource voltage VGSS plusmn 12 V
DC ID 30 Drain current
Pulse IDP 60 A
Drain power dissipation PD (Note 1) 700 mW
Channel temperature Tch 150 degC
Storage temperature range Tstg minus55~150 degC
Note Using continuously under heavy loads (eg the application of high temperaturecurrentvoltage and the significant change in temperature etc) may cause this product to decrease in the reliability significantly even if the operating conditions (ie operating temperaturecurrentvoltage etc) are within the absolute maximum ratings Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (ldquoHandling PrecautionsrdquoldquoDerating Concept and Methodsrdquo) and individual reliability data (ie reliability test report and estimated failure rate etc)
Note 1 Mounted on an FR4 board (254 mm times 254 mm times 16 t Cu Pad 645 mm2 )
Electrical Characteristics (Ta = 25degC) Characteristic Symbol Test Condition Min Typ Max Unit
V (BR) DSS ID = 1 mA VGS = 0 30 ⎯ ⎯ V Drainndashsource breakdown voltage
V (BR) DSX ID = 1 mA VGS = ndash12 V 18 ⎯ ⎯ V
Drain cutoff current IDSS VDS = 30 V VGS = 0 ⎯ ⎯ 1 μA
Gate leakage current IGSS VGS = plusmn 12 V VDS = 0 ⎯ ⎯ plusmn1 μA
Gate threshold voltage Vth VDS = 3 V ID = 1 mA 04 ⎯ 10 V
Forward transfer admittance Yfs VDS = 3 V ID = 2 A (Note2) 38 77 ⎯ S
ID = 20 A VGS = 40 V (Note2) ⎯ 52 71
ID = 10 A VGS = 25 V (Note2) ⎯ 64 87 Drainndashsource ON-resistance RDS (ON)
ID = 05 A VGS = 18 V (Note2) ⎯ 81 131
mΩ
Input capacitance Ciss ⎯ 270 ⎯
Output capacitance Coss ⎯ 56 ⎯
Reverse transfer capacitance Crss
VDS = 10 V VGS = 0 f = 1 MHz
⎯ 47 ⎯
pF
Total Gate Charge Qg ⎯ 43 ⎯
Gate-Source Charge Qgs ⎯ 28 ⎯
Gate-Drain Charge Qgd
VDS = 15 V IDS= 30 A VGS = 4 V
⎯ 15 ⎯
nC
Turn-on time ton ⎯ 20 ⎯ Switching time
Turn-off time toff
VDD = 10 V ID = 2 A VGS = 0 to 25 V RG = 47 Ω ⎯ 31 ⎯
ns
Drainndashsource forward voltage VDSF ID = minus 30 A VGS = 0 V (Note2) ⎯ ndash 085 ndash 12 V
Note2 Pulse test
Unit mm
JEDEC ―
JEITA ―
TOSHIBA 2-3S1A
Weight 10 mg (typ)
SSM3K302T
2007-11-01 2
Switching Time Test Circuit
(a) Test Circuit (b) VIN
Marking Equivalent Circuit (top view)
Notice on Usage Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for
this product For normal switching operation VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth
(The relationship can be established as follows VGS (off) lt Vth lt VGS (on)) Take this into consideration when using the device
Handling Precaution When handling individual devices that are not yet mounted on a circuit board make sure that the environment is
protected against electrostatic discharge Operators should wear antistatic clothing and containers and other objects that come into direct contact with devices should be made of antistatic materials
(c) VOUT
VDD = 10 V RG = 47 Ω DU lt = 1 VIN tr tf lt 5 ns Common Source Ta = 25degC
VDD
OUT IN 25 V
0
10 μs R
G
tf
ton
90
10
25 V
0 V
10
90
toff
tr
VDD
VDS (ON)
KKA
1 2
3
1 2
3
SSM3K302T
2007-11-01 3
ID ndash VDS
0
4
0 02 04 06 1
3
VGS = 15 V
10 V
1
2
18 V
25 V
08
5
RDS (ON) ndash Ta
0 minus50
ID = 20 A VGS = 40 V
0 50 150
100
200
300
100
0 2 6 8 4 0
100
200
RDS (ON) ndash VGS
150
50
10 A 25 V
10
ID ndash VGS
10
0
01
1
0001
001
0000120
minus 25 degC
Ta = 100 degC
25 degC
10
Vth ndash Ta
10
0minus50 0 150
05
50 100
40 V
250
150
50
05 A 18 V
VGS = 40 V
RDS (ON) ndash ID
0 1 3 4 2 0
100
200
150
50
5
25 V
18 V
minus 25 degC
Ta = 100 degC
25 degC
Drainndashsource voltage VDS (V)
D
rain
cur
rent
I D
(A
)
Gatendashsource voltage VGS (V)
D
rain
cur
rent
I D
(A
)
Common Source VDS = 3 V
Common Source Ta = 25degC
ID = 05 A
Common Source
Ta = 25degC
Drain current ID (A)
Dra
inndashs
ourc
e O
N-r
esis
tanc
e R
DS
(ON
) (
mΩ
)
Gatendashsource voltage VGS (V)
Dra
inndashs
ourc
e O
N-r
esis
tanc
e R
DS
(ON
) (
mΩ
)
Common Source
Ta = 25degC
Ambient temperature Ta (degC)
Gat
e th
resh
old
volta
ge
Vth
(V
)
Ambient temperature Ta (degC)
Dra
inndashs
ourc
e on
-res
ista
nce
RD
S (O
N)
(mΩ
)
Common Source
Common source
VDS = 3 V
ID = 1 mA
SSM3K302T
2007-11-01 4
t ndash ID
1001
100
01
1000
1 10
toff
10
IDR ndash VDS
|Yfs| ndash ID
01 10
1
10
01 1
3
03
C ndash VDS
10 01 1 10 100
100
1000
300
500
30
50
Ciss
CossCrss
001
10
0
01
1
0001
001
ndash02 ndash06 ndash04 ndash10ndash08
minus25 degC
Ta =100 degC
25 degC
tf
ton
tr
Dra
in re
vers
e cu
rren
t I
DR
(A
)
Drainndashsource voltage VDS (V) Drain current ID (A)
Forw
ard
trans
fer a
dmitt
ance
⎪Y
fs⎪
(S
)
Common Source
VGS = 0 V
Ta = 25degC
G
D
S
IDR
Common Source
VDS = 3 V
Ta = 25degC
Sw
itchi
ng ti
me
t
(ns)
Drain current ID (A) Drainndashsource voltage VDS (V)
Cap
acita
nce
C
(pF)
Common Source Ta = 25degC f = 1 MHz VGS = 0 V
Common SourceVDD = 10 V VGS = 0 to 25 VTa = 25degC RG = 47 Ω
Total Gate Charge Qg (nC)
Dynamic Input Characteristic
0 0
VDD=15V
4 8
4
8
12
10
6
2
Common Source ID = 3 A
Ta = 25degC
VDD=24V
Gat
endashS
ourc
e vo
ltage
V
GS
(V
)
SSM3K302T
2007-11-01 5
Tran
sien
t the
rmal
impe
danc
e R
th (deg
CW
)
Pulse width tw (s)
rth ndash tw
1
100
1000
10
0001 001 01 10001 10 100
Single Pulse a Mounted on FR4 board
(254mm times 254mm times 16t Cu Pad 645 mm2)
b Mounted on FR4 board (254mm times 254mm times 16t Cu Pad 08 mm2times3)
b
a
Ambient temperature Ta (degC)
PD ndash Ta
Dra
in p
ower
dis
sipa
tion
PD
(m
W)
800
0
200
120 100 140
400
600
160
1000
80 60 40 20 0 -20 -40
a
b
a Mounted on FR4 board (254mm times 254mm times 16t Cu Pad 645 mm2)
b Mounted on FR4 board (254mm times 254mm times 16t Cu Pad 08 mm2times3)
SSM3K302T
2007-11-01 6
RESTRICTIONS ON PRODUCT USE bull Toshiba Corporation and its subsidiaries and affiliates (collectively ldquoTOSHIBArdquo) reserve the right to make changes to the information
in this document and related hardware software and systems (collectively ldquoProductrdquo) without notice
bull This document and any information herein may not be reproduced without prior written permission from TOSHIBA Even with TOSHIBArsquos written permission reproduction is permissible only if reproduction is without alterationomission
bull Though TOSHIBA works continually to improve Productrsquos quality and reliability Product can malfunction or fail Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life bodily injury or damage to property including data loss or corruption Before customers use the Product create designs including the Product or incorporate the Product into their own applications customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information including without limitation this document the specifications the data sheets and application notes for Product and the precautions and conditions set forth in the ldquoTOSHIBA Semiconductor Reliability Handbookrdquo and (b) the instructions for the application with which the Product will be used with or for Customers are solely responsible for all aspects of their own product design or applications including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications (b) evaluating and determining the applicability of any information contained in this document or in charts diagrams programs algorithms sample application circuits or any other referenced documents and (c) validating all operating parameters for such designs and applications TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERSrsquo PRODUCT DESIGN OR APPLICATIONS
bull Product is intended for use in general electronics applications (eg computers personal equipment office equipment measuring equipment industrial robots and home electronics appliances) or for specific applications as expressly stated in this document Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality andor reliability andor a malfunction or failure of which may cause loss of human life bodily injury serious property damage or serious public impact (ldquoUnintended Userdquo) Unintended Use includes without limitation equipment used in nuclear facilities equipment used in the aerospace industry medical equipment equipment used for automobiles trains ships and other transportation traffic signaling equipment equipment used to control combustions or explosions safety devices elevators and escalators devices related to electric power and equipment used in finance-related fields Do not use Product for Unintended Use unless specifically permitted in this document
bull Do not disassemble analyze reverse-engineer alter modify translate or copy Product whether in whole or in part
bull Product shall not be used for or incorporated into any products or systems whose manufacture use or sale is prohibited under any applicable laws or regulations
bull The information contained herein is presented only as guidance for Product use No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product No license to any intellectual property right is granted by this document whether express or implied by estoppel or otherwise
bull ABSENT A WRITTEN SIGNED AGREEMENT EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER INCLUDING WITHOUT LIMITATION INDIRECT CONSEQUENTIAL SPECIAL OR INCIDENTAL DAMAGES OR LOSS INCLUDING WITHOUT LIMITATION LOSS OF PROFITS LOSS OF OPPORTUNITIES BUSINESS INTERRUPTION AND LOSS OF DATA AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE USE OF PRODUCT OR INFORMATION INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY FITNESS FOR A PARTICULAR PURPOSE ACCURACY OF INFORMATION OR NONINFRINGEMENT
bull Do not use or otherwise make available Product or related software or technology for any military purposes including without limitation for the design development use stockpiling or manufacturing of nuclear chemical or biological weapons or missile technology products (mass destruction weapons) Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the US Export Administration Regulations Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations
bull Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances including without limitation the EU RoHS Directive TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations
2009 7 2 14
SEMICONDUCTORTECHNICAL DATA
2N7002AN CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
Revision No 7
INTERFACE AND SWITCHING APPLICATION
FEATURESHigh density cell design for low RDS(ON)Voltage controolled small signal switchRugged and reliableHigh saturation current capablity
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
1 SOURCE
2 GATE
3 DRAIN
SOT-23
A
B
C
D
E
293 020
130+020-015
045+015-005
240+030-020
G 190
H
J
K
L
M
N
095
013+010-005
000 ~ 010
055
020 MIN
100+020-010
M
J
K
E
1
2 3
H
GA
NC
B
D 130 MAX
L L
P P
P 7
+_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP MAX UNIT
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=10 A 60 - - V
Zero Gate Voltage Drain Current IDSS VDS=60V VGS=0V - - 1 A
Gate-Body Leakage Forward IGSSF VGS=20V VDS=0V - - 1 A
Gate-Body Leakage Reverse IGSSR VGS=-20V VDS=0V - - -1 A
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage (RGS 1 ) VDGR 60 V
Gate-Source Voltage VGSS 20 V
Drain Current Continuous ID 115
mAPulsed IDP 800
Drain Power Dissipation PD 200 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
D
G
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE
PLEASE HANDLE WITH CAUTION
Type Name
Marking
Lot No
WB
EQUIVALENT CIRCUIT
2009 7 2 24
2N7002A
Revision No 7
ELECTRICAL CHARACTERISTICS (Ta=25 )ON CHARACTERISTICS (Note 1)
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP MAX UNIT
Gate Threshold Voltage Vth VDS=VGS ID=250 A 1 21 25 V
Drain-Source ON Resistance RDS(ON)
VGS=10V ID=500mA - 18 5
VGS=5V ID=50mA - - 5
Drain-Source ON Voltage VDS(ON)
VGS=10V ID=500mA - 09 25V
VGS=5V ID=50mA - - 025
On State Drain Current ID(ON) VGS=10V VDS 2 VDS(ON) 500 - - mA
Forward Transconductance gFS VDS=2VDS(ON) ID=200mA 80 320 - mS
DYNAMIC CHARACTERISTICS
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP MAX UNIT
Input Capacitance Ciss
VDS=25V VGS=0V f=1MHz
- 20 50
pFReverse Transfer Capacitance Crss - 4 5
Output Capacitance Coss - 11 25
Switching TimeTurn-On Time ton VDD=30V RL=150 ID=200mA
VGS=10V RGEN=25
- - 20nS
Turn-Off Time toff - - 20
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RAINGS
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP MAX UNIT
Maximum Continuous Drain-SourceDiode Forward Current
IS - - - 115 mA
Maximum Pulsed Drain-SourceDiode Forward Current
ISM - - - 800 mA
Drain-Source Diode Forward Voltage VSD VGS=0V IS=115mA (Note1) - 088 15 V
OUTOUTPUT V 10 10
10
90 90
90
50 50
ftrt
ININPUT V
INVERTED
PULSE WIDTH
d(on)t d(off)t
ont offt
SWITCHING TIME TEST CIRCUIT
GSVGENR
V DD
R L
VOUT
DUT
D
G
S
INV
Note 1) Pulse Test Pulse Width 300 Duty Cycle 20
2009 7 2 34
2N7002A
Revision No 7
DRAIN-SOURCE VOLTAGE V (V)
DR
AIN
CU
RR
EN
T I
(
A)
D
0
DS
0
I - VD DS
1
COMMON SOURCE
Ta=25 C
V =3VGS
2 3 4 5
05
10
15
20
4V
5V
6V
7V10V
9V 8V
GATE-SOURCE VOLTAGE V (V)
DR
AIN
CU
RR
EN
T I
(A
)D
GS
I - VD GS
0
0
2
COMMON SOURCE
Ta=
-55
C
V =10VGS
4 6 8 10
08
04
12
16
20
Ta=
25 C
Ta=
125
C
0
05
02
COMMON SOURCE
V =10VGS
04 06 08 10
15
10
20
25
30
Ta=25 C
DR
AIN
SO
UR
CE
ON
- R
ES
IST
AN
CE
R (Ω
) (N
OR
MA
LIZ
ED
)
DRAIN CURRENT I (A)D
DS
(ON
)
R - IDS(ON) D
-50
0
-25
COMMON SOURCE
I =500mAD
V =10VGS
0 25 50 75 100 125 150
10
20
30
40
DR
AIN
SO
UR
CE
ON
- R
ES
IST
AN
CE
R (Ω
) (N
OR
MA
LIZ
ED
)
JUNCTION TEMPERATURE T ( C)j
DS
(ON
)
R - TDS(ON) j
-50
08
-25
COMMON SOURCE
V =VDS GS
I =1mAD
0 25 50 75 100 125 150
09
085
095
10
11
105
GA
TE
-SO
UR
CE
TH
RE
SH
OL
D V
OL
TA
GE
V
(NO
RM
AL
IZE
D)
JUNCTION TEMPERATURE T ( C)j
th
V - Tth j
BODY DIODE FORWARD VOLTAGE V (V)
RE
VE
RS
E D
RA
IN C
UR
RE
NT
I (
A)
S
SD
I - VS SD
001
02
003
01
03
1
3
10COMMON
SOURCE
V =0GS
30
Ta=
-55 C
04 06 08 10 12 14
Ta=
25 C
Ta=
125
C
2009 7 2 44
2N7002A
Revision No 7
COMMON SOURCE
Ta=25 C
f=1MHz
V =0
DRAIN-SOURCE VOLTAGE V (V)
CA
PA
CIT
AN
CE
C (p
F)
1 1053 30
C - V
GS
DS
50
DS
C rss
ossC
Ciss
1
5
3
10
50
30
100
GATE CHARGE Q (nC)
GA
TE
-SO
UR
CE
VO
LT
AG
E V
(
V)
GS
g
V - QGS g
0
0
04
COMMON SOURCE
V =25VDS
I =115mAD
08 12 16 20
4
2
6
8
10
I - V
DSDRAIN-SOURCE VOLTAGE V (V)
DR
AIN
CU
RR
EN
T I
(
A)
D DS
D
1 3 10 100305
SINGLE PULSE
Ta=25 C
GSV =10V
100micros
1mS
10mS
100mS1s
10s
DC
DS(ON)
R
L
IMIT
50
2
0005
001
003
005
01
03
05
1
P - TaD
AMBIENT TEMPERATURE Ta ( C)
0 20 40
50
D
0DR
AIN
PO
WE
R D
ISS
IPA
TIO
N P
(m
W)
60 80 100 120 140 160
100
150
200
250
300
350
TPC8026
2007-02-15 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
TPC8026 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications bull Small footprint due to small and thin package bull Low drain-source ON resistance RDS (ON) = 51 mΩ (typ) bull High forward transfer admittance |Yfs| = 30 S (typ) bull Low leakage current IDSS = 10 μA (max) (VDS = 30 V) bull Enhancement mode Vth = 13 to 25 V (VDS = 10 V ID = 1 mA)
Absolute Maximum Ratings (Ta = 25degC)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS 30 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V
Gate-source voltage VGSS plusmn20 V
DC (Note 1) ID 13 Drain current
Pulse (Note 1) IDP 52 A
Drain power dissipation (t = 10 s)
(Note 2a) PD 19 W
Drain power dissipation (t = 10 s)
(Note 2b) PD 10 W
Single pulse avalanche energy
(Note 3) EAS 44 mJ
Avalanche current IAR 13 A
Repetitive avalanche energy
(Note 2a) (Note 4) EAR 0048 mJ
Channel temperature Tch 150 degC
Storage temperature range Tstg minus55 to 150 degC
Note 1 Note 2 Note 3 and Note 4 See the next page
Using continuously under heavy loads (eg the application of high temperaturecurrentvoltage and the significant change in temperature etc) may cause this product to decrease in the reliability significantly even if the operating conditions (ie operating temperaturecurrentvoltage etc) are within the absolute maximum ratings Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (ldquoHandling PrecautionsrdquoDerating Concept and Methods) and individual reliability data (ie reliability test report and estimated failure rate etc)
This transistor is an electrostatic-sensitive device Please handle with caution
Unit mm
JEDEC ―
JEITA ―
TOSHIBA 2-6J1B
Weight 008 g (typ)
Circuit Configuration
8 6
1 2 3
7 5
4
TPC8026
2007-02-15 2
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance channel to ambient
(t = 10 s) (Note 2a) Rth (ch-a) 658 degCW
Thermal resistance channel to ambient
(t = 10 s) (Note 2b) Rth (ch-a) 125 degCW
Marking (Note 5)
Note 1 Ensure that the channel temperature does not exceed 150degC
Note 2 (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
Note 3 VDD = 24 V Tch = 25degC (initial) L = 02 mH IAR = 13 A
Note 4 Repetitive rating pulse width limited by max channel temperature
Note 5 bull on lower left of the marking indicates Pin 1
(a)
FR-4 254 times 254 times 08
(unit mm)
(b)
FR-4 254 times 254 times 08
(unit mm)
Weekly code (Three digits) Week of manufacture (01 for the first week of a year sequential number up to 52 or 53)
Year of manufacture (The last digit of a year)
T P C 8 0 2 6Lot No
A line indicates lead (Pb)-free package orlead (Pb)-free finish
Part No (or abbreviation code)
TPC8026
2007-02-15 3
Electrical Characteristics (Ta = 25degC)
Characteristics Symbol Test Condition Min Typ Max Unit
Gate leakage current IGSS VGS = plusmn20 V VDS = 0 V ⎯ ⎯ plusmn100 nA
Drain cut-OFF current IDSS VDS = 30 V VGS = 0 V ⎯ ⎯ 10 μA
V (BR) DSS ID = 10 mA VGS = 0 V 30 ⎯ ⎯ Drain-source breakdown voltage
V (BR) DSX ID = 10 mA VGS = minus20 V 10 ⎯ ⎯ V
Gate threshold voltage Vth VDS = 10 V ID = 1 mA 13 ⎯ 25 V
VGS = 45 V ID = 65 A ⎯ 75 10 Drain-source ON resistance RDS (ON)
VGS = 10 V ID = 65 A ⎯ 51 66 mΩ
Forward transfer admittance |Yfs| VDS = 10 V ID = 65 A 15 30 ⎯ S
Input capacitance Ciss ⎯ 1800 ⎯
Reverse transfer capacitance Crss ⎯ 370 ⎯
Output capacitance Coss
VDS = 10 V VGS = 0 V f = 1 MHz
⎯ 570 ⎯
pF
Rise time tr ⎯ 15 ⎯
Turn-ON time ton ⎯ 28 ⎯
Fall time tf ⎯ 21 ⎯
Switching time
Turn-OFF time toff
Duty lt = 1 tw = 10 μs ⎯ 54 ⎯
ns
Total gate charge (gate-source plus gate-drain) Qg ⎯ 42 ⎯
Gate-source charge 1 Qgs1 ⎯ 65 ⎯
Gate-drain (ldquomillerrdquo) charge Qgd
VDD sim minus 24 V VGS = 10 V ID = 13 A
⎯ 14 ⎯
nC
Source-Drain Ratings and Characteristics (Ta = 25degC)
Characteristics Symbol Test Condition Min Typ Max Unit
Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 52 A
Forward voltage (diode) VDSF IDR = 13 A VGS = 0 V ⎯ ⎯ minus12 V
RL
= 2
3 Ω
VDD sim minus 15 V
0 VVGS
10 V
47
Ω
ID = 65 AVOUT
TPC8026
2007-02-15 4
100100
5 6
VGS = 10 V
45
1
100
10
01 1 10
Ta = minus55degC
25 100
01 1 10 01
1
10
100
1000
65
ID = 13 A
3
0 2 4 6 8 100
004
008
012
016
020
Ta = minus55degC 100degC
25degC
1 2 3 4 0
10
20
30
40
50
0
6
38
VGS = 3 V
34
10
36 45
8
4
32
31
0 02 04 06 08 10
4
8
12
16
20
33
6
38
VGS = 3 V
34
10
36
4
8
45
3231
0 04 08 12 16 20
10
20
30
40
50
33
ID ndash VDS
ID ndash VDS
ID ndash VGS
VDS ndash VGS
|Yfs| ndash ID
RDS (ON) ndash ID
Common sourceTa = 25degC Pulse test
Common sourceTa = 25degC Pulse test
Common source VDS = 10 V Pulse test
Common sourceTa = 25degC Pulse test
Common sourceVDS = 10 V Pulse test
Common sourceTa = 25degC Pulse test
Forw
ard
trans
fer a
dmitt
ance
|Y
fs|
(S
)
D
rain
minussou
rce
volta
ge
VD
S
(V)
Drainminussource voltage VDS (V)
D
rain
cur
rent
I D
(A
)
Drain-source voltage VDS (V)
D
rain
cur
rent
I D
(A
)
Gateminussource voltage VGS (V)
D
rain
cur
rent
I D
(A
)
Gateminussource voltage VGS (V)
Drain current ID (A) Drain current ID (A)
Dra
inminuss
ourc
e O
N re
sist
ance
R
DS
(ON
) (
mΩ
)
TPC8026
2007-02-15 5
60 70
80 160120
VDS
VGS
24 12
0 20 40
4
12
16
20
0
10
20
30
50
40
8
10 30 50
VDD = 6V
0
(1)
(2)
0
04
08
12
16
0 40 80 160120
2
minus80 minus40 0 400
3
25
05
15
2
1
Ciss
Coss
Crss
1000
10000
100 01 1 10 100
1045
3
VGS = 0 V
1
0 minus02 minus04 minus06 minus08 minus1001
1000
1
10
100
VGS = 45 V
ID = 36513 A
ID = 36513 A
0
4
8
12
16
minus80 minus40 0 40 80 120 160
VGS = 10 V
RDS (ON) ndash Ta
IDR ndash VDS
Vth ndash Ta
PD ndash Ta
Common source Pulse test
Common sourceTa = 25degC Pulse test
Common sourceVGS = 0 V f = 1 MHz Ta = 25degC
Common sourceVDS = 10 V ID = 1mA Pulse test
Common source ID = 13 A Ta = 25degC Pulse test
Ambient temperature Ta (degC)
Dra
in-s
ourc
e O
N re
sist
ance
R
DS
(ON
) (
mΩ
)
Drainminussource voltage VDS (V)
D
rain
reve
rse
curr
ent
ID
R
(A)
Drainminussource voltage VDS (V)
Capacitance ndash VDS
C
apac
itanc
e C
(p
F)
Ambient temperature Ta (degC)
G
ate
thre
shol
d vo
ltage
V
th
(V)
Ambient temperature Ta (degC)
D
rain
pow
er d
issi
patio
n P
D
(W)
Gat
eminusso
urce
vol
tage
V
GS
(V
)
Total gate charge Qg (nC)
Dynamic inputoutput characteristics
D
rain
minussou
rce
volta
ge
VD
S
(V)
(1)Device mounted on a glass-epoxyboard(a)(Note 2a) (2)Device mounted on a glass-epoxyboard (b)(Note 2b) t = 10 s
TPC8026
2007-02-15 6
t = 10 ms
1 ms
VDSS max
01 1 10 10001
1
10
100
01 0001 001 01 1 10 100 1000
1
10
100
1000
(2)
(1)
(1)Device mounted on a glass-epoxyboard (a)(Note 2a)(2)Device mounted on a glass-epoxyboard (b)(Note 2b)
rth minus tw
Single pulse
Pulse width tw (s)
Drainminussource voltage VDS (V)
Tran
sien
t the
rmal
impe
danc
e r
th
(degC
W)
D
rain
cur
rent
I D
(A
)
Safe operating area
ID max (Pulse)
Single pulse Ta = 25degC
Curves must be derated linearly with increase in temperature
TPC8026
2007-02-15 7
RESTRICTIONS ON PRODUCT USE 20070701-EN
bull The information contained herein is subject to change without notice
bull TOSHIBA is continually working to improve the quality and reliability of its products Nevertheless semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress It is the responsibility of the buyer when utilizing TOSHIBA products to comply with the standards of safety in making a safe design for the entire system and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life bodily injury or damage to property In developing your designs please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications Also please keep in mind the precautions and conditions set forth in the ldquoHandling Guide for Semiconductor Devicesrdquo or ldquoTOSHIBA Semiconductor Reliability Handbookrdquo etc
bull The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer personal equipment office equipment measuring equipment industrial robotics domestic appliances etc)These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality andor reliability or a malfunction or failure of which may cause loss of human life or bodily injury (ldquoUnintended Usagerdquo) Unintended Usage include atomic energy control instruments airplane or spaceship instruments transportation instruments traffic signal instruments combustion control instruments medical instruments all types of safety devices etc Unintended Usage of TOSHIBA products listed in his document shall be made at the customerrsquos own risk
bull The products described in this document shall not be used or embedded to any downstream products of which manufacture use andor sale are prohibited under any applicable laws and regulations
bull The information contained herein is presented only as a guide for the applications of our products No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties
bull Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations
1 Scope
This specification covers UL recognized XLPE insulated wire for internal wiring of electronic equipment
File NoE249002 [UL style 330210530V]
2 Construction Item Unit Spec
AWG --- 28 Material --- Tinned copper
Construction Nomm 70127plusmn0003 Pitch mm S P=2~4
Inner conductor
Dia(approx) mm 038
Material --- XLPE Nom thickness mm 021 Min thickness mm 019 Dia(approx) mm 080plusmn003
Insulation
Color --- BlackBrown WhiteRedGreenYellowGray
BlueOrangePurple
Cross-section of cable
insulation
conductor
3 Characteristics Item Unit Spec
Rated temperature -10~105 Rated voltage V 30 Max conductor resistance at 20 Ωkm 227 Min insulation resistance at 20 MΩ-km 1000
Dielectric withstanding voltage Vmin 500 Unaged elongation (min) 159 Unaged tensile strength kgfmm2
105 Tension fracture kg Min 195 Flame resistance -- FT-2 Spark test KV 15 Flexibility test Cycle 30000 min
Initial Issue Page4 of 4 Eon-tech (SuZhou) Corporation WI-73-01-04-02-0909
SG-OF-04040M1
IEC SYSTEM FOR MUTUAL RECOGNITION OF TEST SYSTEME CEI D ACCEPTATION MUTUELLE DE CERTIFICATES FOR ELECTRICAL EQUIPMENT (IECEE) CERTIFICATS DESSAIS DES EQUIPEMENTS CB SCHEME ELECTRIQUES (IECEE)METHODE OC
CB TEST CERTIFICATE CERTIFICAT DESSAI OC
Product Produit
Name and address of the applicant Nom et adressedu demandeur
Name and address of the manufacturer Nom et adressedu fabricant
Name and address of the factory Nom et adressede lusine
Rating and principal characteristics Valeurs nominales et caractenstlques principales
Modeltype Ref Ref de type
Additional information (if necessary) Information cornpternentalre (si necessatre)
A sample of the product was tested and found
to be in conformity with Un echantillon de ce produit a ete essays et a ete
considere conforme a la
as shown in the Test Report Ref No
which form part of this certificate comme indique dans Ie Rapportdessais numero
de reference quiconstitue une partie de ce
certificat
Battery Packs ( Lithium Ion Polymer Battery )
Gallopwire Enterprise CoLtd
3F NO551 Sec7Chung Hsiao E Road
11561 Taipei TAIWAN
Gallopwire Enterprise COLtd 3F NO551 Sec7Chung Hsiao E Road 11561 Taipei TAIWAN
Gallopwire Enterprise Co Ltd (KUNSHAN) No25 First Avenue Kunshan Export Processing Zone 215300 Kunshan Jianqsu PEOPLES REPUBLIC OF CHINA
Rated voltage 74 Vdc Rated capacity 5000 mAh 37 Wh Protection class III
8299-PRLUCMD50004
IEC 60950-1 2005
TOy SOD PSB Pte Ltd
081-100634-100
--------___----~
This CB Test Certificate is issued by the National Certification Body Ce Certificat dessai OC est etabli par lOrganisme National de Certification
Date 2010-07-15
CBS 10 07 55634 144 ( Bill Lin )
TOy SOD PSB Pte Ltdmiddot 1 Science Park Drive Singapore 118221 PSB Singapore
Page 1 of 1
ELECTRONICS TESTING CENTER(ETC) TAIWAN File No 10-06-RBF-180 EMC TESTING DEPARTMENT II Page 1 22
EMC TEST REPORT
Responsible Party GALLOPWIRE ENTERPRISE CO LTD
Manufacturer GALLOPWIRE ENTERPRISE CO LTD (KUNSHAN)
Description of Product Battery pack
Trade Name NA
Model No 8299-PRLUCMD50004
Test Report File No 10-06-RBF-180
Date Test Item Received Jun 29 2010
Date Test Campaign Completed
Jun 30 2010
Date of Issue Jul 01 2010
Test Performed by
ELECTRONICS TESTING CENTER (ETC) TAIWAN NO 34 LIN 5 DINGFU TSUEN LINKOU SHIANG
TAIPEI COUNTY TAIWAN 24442 ROC TEL (02)26023052 FAX (02)26010910
http wwwetcorgtw e-mailemcetcorgtw
This test report consists of 22 Pages This test report is the property of ETC and shall not be reproduced except in full without the written consent of ETC ETC hereby returns all rights-in-data to [GALLOPWIRE ENTERPRISE CO LTD] for their exclusive legal use
Note 1 The results of the Test Report relate only to the items tested 2 The Test Report shall not be reproduced except in full without the written approval of ETC
ELECTRONICS TESTING CENTER(ETC) TAIWAN File No 10-06-RBF-180 EMC TESTING DEPARTMENT II Page 2 22
CONTENTS
EMC TEST REPORT 1 CONTENTS 2
1 TEST REPORT CERTIFICATION 3 2 GENERAL INFORMATIONS 5
21 Description of EUT5 22 Related Information of EUT 5 23 Tested Configuration 5 24 Deviations Record 6 25 Modification Record6
3 SUMMARY OF TEST RESULTS7 31 Emissions7
311 Radiated Emissions7 32 Immunity 8
321 Immunity Criteria 8 322 Electrostatic Discharge Immunity (Charge Mode Discharge Mode) 8 323 RF Radiated Fields Immunity (Charge Mode Discharge Mode) 8 324 Power Frequency Magnetic Field Immunity (Charge Mode Discharge Mode) 8
4 TEST DATA amp RELATED INFORMATIONS 9 41 Emissions9
413 Radiated Emissions Test 9 4131 Radiated Emissions Test Data 9 4132 Radiated Emissions Test Setup Photos 11
42 42 Immunity13 421 Electrostatic Discharge Immunity Test 13
4211 Electrostatic Discharge Immunity Test Data 13 4212 Electrostatic Discharge Immunity Test Setup Photos16
422 RF Radiated Fields Immunity Test 17 4221 RF Radiated Fields Immunity Test Data17 4222 RF Radiated Fields Immunity Test Setup Photos 19
423 Power Frequency Magnetic Field Immunity Test 20 4231 Power Frequency Magnetic Field Immunity Test Data 20 4232 Power Frequency Magnetic Field Immunity Test Setup Photos 22
ELECTRONICS TESTING CENTER(ETC) TAIWAN File No 10-06-RBF-180 EMC TESTING DEPARTMENT II Page 3 22
1 TEST REPORT CERTIFICATION Client GALLOPWIRE ENTERPRISE CO LTD
Address 3F No 551 Sec 7 Chung Hsiao E Road Taipei Taiwan ROC
Manufacturer GALLOPWIRE ENTERPRISE CO LTD (KUNSHAN)
Address 25 1ST AVE KUNSHAN EXPORT PROCESSING ZONE
KUNSHAN JIANGSU CHINA
EUT Battery pack
Trade name NA
Model No 8299-PRLUCMD50004
Test specifications
Emissions EN 550222006(Class B)
Immunity IEC61000-4-22008 IEC61000-4-32006A12007A22010 IEC61000-4-82009
Regulations applied
Emissions EN 550222006(Class B)
Immunity EN 550241998A12001A22003
The testing described in this report has been carried out to the best of our knowledge and ability and our responsibility is limited to the exercise of reasonable care This certification is not intended to believe the sellers from their legal andor contractual obligations
ELECTRONICS TESTING CENTER(ETC) TAIWAN File No 10-06-RBF-180 EMC TESTING DEPARTMENT II Page 5 22
2 GENERAL INFORMATIONS
21 Description of EUT EUT is Battery Pack
22 Related Information of EUT
Size of EUT 13cm(L) X 13cm(W) X 05cm(H)
Power Supply DC 74V Cables dedicated for EUT
AC Power Line [ ] Nonshielded [ ] Shielded [X] None Length m Coaxial Line [ ] Nonshielded [ ] Shielded [X] None Length m RJ45 Line [ ] Nonshielded [ ] Shielded [X] None Length m BNC Line [ ] Nonshielded [ ] Shielded [X] None Length m BNC Line [ ] Nonshielded [ ] Shielded [X] None Length m USB Cable [ ] Nonshielded [ ] Shielded [X] None Length m AV Cable [ ] Nonshielded [ ] Shielded [X] None Length m
23 Tested Configuration The EUT connected with the following peripheral devices
Product Manufacturer Model No IO Cable Battery pack GALLOPWIRE
ENTERPRISE CO LTD(KUNSHAN)
8299-PRLUCMD50004 ----
Load NA NA 06m Unshielded Signal Cable DC Power Supply GW GPC-3030D 20m Unshielded AC Power Core
Remark ldquordquo means equipment under test
ELECTRONICS TESTING CENTER(ETC) TAIWAN File No 10-06-RBF-180 EMC TESTING DEPARTMENT II Page 6 22
24 Deviations Record
No deviations were required
25 Modification Record
No modifications were required (That is the EUT complied with the requirement as tested)
ELECTRONICS TESTING CENTER(ETC) TAIWAN File No 10-06-RBF-180 EMC TESTING DEPARTMENT II Page 7 22
3 SUMMARY OF TEST RESULTS
31 Emissions
311 Radiated Emissions [X] ndash PASS (Mode Charge Mode) Minimum EMI Margin(QP) to the limit -47 dB at 14324 MHz [X] ndash PASS (Mode Discharge Mode) Minimum EMI Margin(QP) to the limit -47 dB at 5392 MHz
ELECTRONICS TESTING CENTER(ETC) TAIWAN File No 10-06-RBF-180 EMC TESTING DEPARTMENT II Page 8 22
32 Immunity
321 Immunity Criteria
The results of all of the immunity tests performed on the EUT were evaluated according to the following criteria and according to the manufacturerrsquos specifications for the EUT
Performance criterion A The EUT continued to operate as intended No degradation of performance or loss of function was allowed below a performance level specified by the manufacturer when the EUT was used as intended
Performance criterion B The EUT continued to operate as intended after the test No degradation of performance or loss of function was allowed below a performance level specified by the manufacturer when the EUT was used as intended During the test degradation of performance was however allowed No change of actual operating state or stored data was allowed
Performance criterion C Temporary loss of function was allowed provided the function was self recoverable or could be restored by the operation of the controls
322 Electrostatic Discharge Immunity (Charge Mode Discharge Mode) Requirement Criterion B (or better)
[X] - No Degradation of Function - Satisfies Criterion A
[ ] - Distortion of Function - Satisfies Criterion B
[ ] - Error of Function - Satisfies Criterion C
323 RF Radiated Fields Immunity (Charge Mode Discharge Mode) Requirement Criterion A
[X] - No Degradation of Function - Satisfies Criterion A
[ ] - Distortion of Function - Satisfies Criterion B
[ ] - Error of Function - Satisfies Criterion C
324 Power Frequency Magnetic Field Immunity (Charge Mode Discharge Mode) Requirement Criterion A
[X] - No Degradation of Function - Satisfies Criterion A
[ ] - Distortion of Function - Satisfies Criterion B
[ ] - Error of Function - Satisfies Criterion C
ELECTRONICS TESTING CENTER(ETC) TAIWAN File No 10-06-RBF-180 EMC TESTING DEPARTMENT II Page 9 22
4 TEST DATA amp RELATED INFORMATIONS
41 Emissions
413 Radiated Emissions Test
4131 Radiated Emissions Test Data
1 Operating Conditions of The EUT Charge Mode
Test Date Jun 30 2010
Test Specification EN 550222006 (Class B)
Equipment Manufacturer Model No Calibration Date Next Cal Date Test Receiver Rohde amp Schwarz ESVS30 20100506 20110505
Amplifier HP 8447D 20100506 20110505 Spectrum Advantest R3162 20100301 20110228
Bi-Log Antenna Schaffner CBL 6111 20100505 20110504
Climatic Condition Ambient Temperature 23 degC Relative Humidity 58 RH
Power Supply System DC Power 74 Vdc
Test Set-up Table-top Equipment
Meter Reading ( dBuV )
Results ( dBuVm )
Emission Frequency
( MHz) HOR VER
CORRdFactor( dB )
HOR VER
Limit (dBuVm)
Margins ( dB )
4729 144 148 104 248 252 300 -48
6958 164 160 87 251 247 300 -49
14324 114 118 135 249 253 300 -47
49136 80 81 228 308 309 370 -61
57233 64 68 250 314 318 370 -52
64965 46 52 263 309 315 370 -55
Notes 1) Place of Measurement Measuring site of the ETC
2) Measurement Distance 10 m
3) Height of table on which the EUT was placed 08 m
4) Height of Receiving Antenna 1 - 4 m
5) Remark ldquo----ldquo means that the emissions level is too low to be measured
6) The expanded uncertainty of the radiated emission tests is 353 dB
ELECTRONICS TESTING CENTER(ETC) TAIWAN File No 10-06-RBF-180 EMC TESTING DEPARTMENT II Page 10 22
2 Operating Conditions of The EUT Discharge Mode
Test Date Jun 30 2010
Test Specification EN 550222006 (Class B)
Equipment Manufacturer Model No Calibration Date Next Cal Date Test Receiver Rohde amp Schwarz ESVS30 20100506 20110505
Amplifier HP 8447D 20100506 20110505 Spectrum Advantest R3162 20100301 20110228
Bi-Log Antenna Schaffner CBL 6111 20100505 20110504
Climatic Condition Ambient Temperature 23 degC Relative Humidity 58 RH
Power Supply System DC Power 74 Vdc
Test Set-up Table-top Equipment
Meter Reading ( dBuV )
Results ( dBuVm )
Emission Frequency
( MHz) HOR VER
CORRdFactor( dB )
HOR VER
Limit (dBuVm)
Margins ( dB )
5392 166 161 87 253 248 300 -47
7325 160 162 89 249 251 300 -49
15866 121 123 130 251 253 300 -47
51145 70 74 234 304 308 370 -62
60724 55 55 254 309 309 370 -61
70856 43 42 272 315 314 370 -55
Notes 1) Place of Measurement Measuring site of the ETC
2) Measurement Distance 10 m
3) Height of table on which the EUT was placed 08 m
4) Height of Receiving Antenna 1 - 4 m
5) Remark ldquo----ldquo means that the emissions level is too low to be measured
6) The expanded uncertainty of the radiated emission tests is 353 dB
ELECTRONICS TESTING CENTER(ETC) TAIWAN File No 10-06-RBF-180 EMC TESTING DEPARTMENT II Page 11 22
4132 Radiated Emissions Test Setup Photos Mode Charge Mode
ELECTRONICS TESTING CENTER(ETC) TAIWAN File No 10-06-RBF-180 EMC TESTING DEPARTMENT II Page 12 22
Mode Discharge Mode
ELECTRONICS TESTING CENTER(ETC) TAIWAN File No 10-06-RBF-180 EMC TESTING DEPARTMENT II Page 13 22
42 42 Immunity
421 Electrostatic Discharge Immunity Test
4211 Electrostatic Discharge Immunity Test Data 1 Operating Conditions of The EUT Charge Mode
Test Date Jun 30 2010
Test Specification IEC61000-4-22008
Equipment Manufacturer Model No Calibration Date Next Cal Date Electrostatic Discharge
Simulator Noiseken ESS2002 20090909 20100908
Climatic Condition Ambient Temperature 29 degC Relative Humidity 52 RH
Atmospheric Pressure 990 mbar
Power Supply System DC Power 74 Vdc
Test Set-up Table-top Equipment
Energy-Storage Capacitor 150 pF Contact Discharge Times 25 timeseach condition
Discharge Resistor 330 Ω Air Discharge Times 10 timeseach condition
Discharge Mode Contact Discharge Air Discharge
ESD Voltage 2 kV 4 kV kV kV 2 kV 4 kV 8 kV kV
PointsResultPolarity + minus + minus + minus + minus + minus + minus + minus + minus
VCP A A A A --- --- --- --- --- --- --- --- --- --- --- ---
HCP A A A A --- --- --- --- --- --- --- --- --- --- --- ---
P1~P10 --- --- --- --- --- --- --- --- A A A A A A --- ---
Note ldquo---ldquomeans the test could not be carrier out
ldquo A rdquo means the EUTrsquos function was correct normal performance during the test
ELECTRONICS TESTING CENTER(ETC) TAIWAN File No 10-06-RBF-180 EMC TESTING DEPARTMENT II Page 14 22
2 Operating Conditions of The EUT Discharge Mode
Test Date Jun 30 2010
Test Specification IEC61000-4-22008
Equipment Manufacturer Model No Calibration Date Next Cal Date Electrostatic Discharge
Simulator Noiseken ESS2002 20090909 20100908
Climatic Condition Ambient Temperature 29 degC Relative Humidity 52 RH
Atmospheric Pressure 990 mbar
Power Supply System DC Power 74 Vdc
Test Set-up Table-top Equipment
Energy-Storage Capacitor 150 pF Contact Discharge Times 25 timeseach condition
Discharge Resistor 330 Ω Air Discharge Times 10 timeseach condition
Discharge Mode Contact Discharge Air Discharge
ESD Voltage 2 kV 4 kV kV kV 2 kV 4 kV 8 kV kV
PointsResultPolarity + minus + minus + minus + minus + minus + minus + minus + minus
VCP A A A A --- --- --- --- --- --- --- --- --- --- --- ---
HCP A A A A --- --- --- --- --- --- --- --- --- --- --- ---
P1~P10 --- --- --- --- --- --- --- --- A A A A A A --- ---
Note ldquo---ldquomeans the test could not be carrier out
ldquo A rdquo means the EUTrsquos function was correct normal performance during the test
ELECTRONICS TESTING CENTER(ETC) TAIWAN File No 10-06-RBF-180 EMC TESTING DEPARTMENT II Page 15 22
TEST POINTS
ELECTRONICS TESTING CENTER(ETC) TAIWAN File No 10-06-RBF-180 EMC TESTING DEPARTMENT II Page 16 22
4212 Electrostatic Discharge Immunity Test Setup Photos
Mode Charge Mode
Mode Discharge Mode
ELECTRONICS TESTING CENTER(ETC) TAIWAN File No 10-06-RBF-180 EMC TESTING DEPARTMENT II Page 17 22
422 RF Radiated Fields Immunity Test
4221 RF Radiated Fields Immunity Test Data
1 Operating Conditions of The EUT Charge Mode
Test Date Jun 30 2010
Test Specification IEC61000-4-32006A12007A22010
Equipment Manufacturer Model No Calibration Date Next Cal Date
Antenna AR AT5080 NA NA
signal Generator Aglient E4421B 20090806 20100805
Amplifier Ophir 5172 NA NA
Amplifier Ophir 5127 NA NA
POWER METER Booton 4232A 20090811 20100810
Climatic Condition Ambient Temperature 29 degC Relative Humidity 52 RH
Power Supply System DC Power 74 Vdc
Test Set-up Table-top Equipment
EUT
Interfere source
HorizontalVertical
Frequency Range 80 MHz ~ 1000 MHz Field Strength 3 Vm Modulation (AM 1kHz 80)
Sweep Rate le 15times10-3 decadess Step Size le 1 of preceding frequency value Dwell time 29 s
Frequency Range (MHz) Antenna-Polarization Direction of Device Test Result
front A rear A left A
80-1000 Horizontal
right A front A rear A left A
80-1000 Vertical
right A
Note ldquo A rdquo means the EUTrsquos function was correct normal performance during the test
ELECTRONICS TESTING CENTER(ETC) TAIWAN File No 10-06-RBF-180 EMC TESTING DEPARTMENT II Page 18 22
2 Operating Conditions of The EUT Discharge Mode
Test Date Jun 30 2010
Test Specification IEC61000-4-32006A12007A22010
Equipment Manufacturer Model No Calibration Date Next Cal Date
Antenna AR AT5080 NA NA
signal Generator Aglient E4421B 20090806 20100805
Amplifier Ophir 5172 NA NA
Amplifier Ophir 5127 NA NA
POWER METER Booton 4232A 20090811 20100810
Climatic Condition Ambient Temperature 29 degC Relative Humidity 52 RH
Power Supply System DC Power 74 Vdc
Test Set-up Table-top Equipment
EUT
Interfere source
HorizontalVertical
Frequency Range 80 MHz ~ 1000 MHz Field Strength 3 Vm Modulation (AM 1kHz 80)
Sweep Rate le 15times10-3 decadess Step Size le 1 of preceding frequency value Dwell time 29 s
Frequency Range (MHz) Antenna-Polarization Direction of Device Test Result
front A rear A left A
80-1000 Horizontal
right A front A rear A left A
80-1000 Vertical
right A
Note ldquo A rdquo means the EUTrsquos function was correct normal performance during the test
ELECTRONICS TESTING CENTER(ETC) TAIWAN File No 10-06-RBF-180 EMC TESTING DEPARTMENT II Page 19 22
4222 RF Radiated Fields Immunity Test Setup Photos Mode Charge Mode
Mode Discharge Mode
ELECTRONICS TESTING CENTER(ETC) TAIWAN File No 10-06-RBF-180 EMC TESTING DEPARTMENT II Page 20 22
423 Power Frequency Magnetic Field Immunity Test
4231 Power Frequency Magnetic Field Immunity Test Data
1 Operating Conditions of The EUT Charge Mode
Test Date Jun 30 2010
Test Specification IEC 61000-4-82009
Equipment Manufacturer Model No Calibration Date Next Cal Date
EMC Immunity Tester EMC-PARTNER TRANSIENT-1000 20100223 20110222
Mfgenerator EMC-PAPTNER MF-1000 20100309 20110308
Climatic Condition Ambient Temperature 29 degC Relative Humidity 52 RH
Atmospheric Pressure 990 mbar
Power Supply System DC Power 74 Vdc
Test Set-up Table-top Equipment
Magnetic field frequency 50 Hz Continuous magnetic field strength 3 Am
Magnetic field direction Testing result X - Axis A Y - Axis A Z - Axis A
Note ldquo A rdquo means the EUTrsquos function was correct normal performance during the test
Y
Z
Z - Axis
X
Y - Axis
X
Y
Z
X - Axis
X
Y
Z
ELECTRONICS TESTING CENTER(ETC) TAIWAN File No 10-06-RBF-180 EMC TESTING DEPARTMENT II Page 21 22
2 Operating Conditions of The EUT Discharge Mode
Test Date Jun 30 2010
Test Specification IEC 61000-4-82009
Equipment Manufacturer Model No Calibration Date Next Cal Date
EMC Immunity Tester EMC-PARTNER TRANSIENT-1000 20100223 20110222
Mfgenerator EMC-PAPTNER MF-1000 20100309 20110308
Climatic Condition Ambient Temperature 29 degC Relative Humidity 52 RH
Atmospheric Pressure 990 mbar
Power Supply System DC Power 74 Vdc
Test Set-up Table-top Equipment
Magnetic field frequency 50 Hz Continuous magnetic field strength 3 Am
Magnetic field direction Testing result X - Axis A Y - Axis A Z - Axis A
Note ldquo A rdquo means the EUTrsquos function was correct normal performance during the test
Y
Z
Z - Axis
X
Y - Axis
X
Y
Z
X - Axis
X
Y
Z
ELECTRONICS TESTING CENTER(ETC) TAIWAN File No 10-06-RBF-180 EMC TESTING DEPARTMENT II Page 22 22
4232 Power Frequency Magnetic Field Immunity Test Setup Photos Mode Charge Mode
Mode Discharge Mode
ELECTRONICS TESTING CENTER(ETC) TAIWAN File No 10-06-RBF-180 EMC TESTING DEPARTMENT II Page 1 4
CONSTRUCTION PHOTOS OF EUT
1 Top View of EUT
2 Bottom View of EUT
ELECTRONICS TESTING CENTER(ETC) TAIWAN File No 10-06-RBF-180 EMC TESTING DEPARTMENT II Page 2 4
CONSTRUCTION PHOTOS OF EUT
3 Side View of EUT
4 Side View of EUT
ELECTRONICS TESTING CENTER(ETC) TAIWAN File No 10-06-RBF-180 EMC TESTING DEPARTMENT II Page 3 4
CONSTRUCTED PHOTOS of EUT
5 Component View of PCB
6 Solder View of PCB
ELECTRONICS TESTING CENTER(ETC) TAIWAN File No 10-06-RBF-180 EMC TESTING DEPARTMENT II Page 4 4
CONSTRUCTED PHOTOS of EUT
7 Label View of EUT
END
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- FEATURES
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- SYSTEM PARTITIONING DIAGRAM
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- ABSOLUTE MAXIMUM RATINGS
- RECOMMENDED OPERATING CONDITIONS
- ELECTRICAL CHARACTERISTICS
- DATA FLASH CHARACTERISTICS OVER RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE
- SMBus TIMING CHARACTERISTICS
- FEATURE SET
-
- Primary (1st Level) Safety Features
- Secondary (2nd Level) Safety Features
- Charge Control Features
- Gas Gauging
- Lifetime Data Logging Features
- Authentication
- Power Modes
- CONFIGURATION
-
- Oscillator Function
- System Present Operation
-
- BATTERY PARAMETER MEASUREMENTS
-
- Charge and Discharge Counting
- Voltage
- Current
- Auto Calibration
- Temperature
-
- COMMUNICATIONS
-
- SMBus On and Off State
-
- SBS Commands
- APPLICATION SCHEMATIC
-
- bq20z45-R1-MSDSpdf
- 材料成分表MCL of bq20z45DBTR-R1pdf
- L2703-01均質材料宣告表090810 BQ20Z45DBTR-R1-MCDpdf
-
- 8431-BQ2941028101pdf
-
- BQ29410pdf
- BQ29410 DSpdf
-
- FEATURES
- APPLICATIONS
- DESCRIPTION
- FUNCTION
- ABSOLUTE MAXIMUM RATINGS
- PACKAGE DISSIPATION RATINGS
- RECOMMENDED OPERATING CONDITIONS
- ELECTRICAL CHARACTERISTICS
-
- OVERVOLTAGE PROTECTION
- DELAY TIME CALCULATION
-
- APPLICATION INFORMATION
-
- BATTERY CONNECTIONS
- CELL CONNECTIONS
-
- bq29410-1pdf
- L2703-01均質材料宣告表090810 BQ29410DCTRG4pdf
- 材料成份表(MCL)pdf
-
- 8431-BQ20Z4513101pdf
-
- BQ20Z45-R1pdf
- BQ20Z45-R1 DSpdf
-
- FEATURES
- APPLICATIONS
- DESCRIPTION
-
- SYSTEM PARTITIONING DIAGRAM
-
- ABSOLUTE MAXIMUM RATINGS
- RECOMMENDED OPERATING CONDITIONS
- ELECTRICAL CHARACTERISTICS
- DATA FLASH CHARACTERISTICS OVER RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE
- SMBus TIMING CHARACTERISTICS
- FEATURE SET
-
- Primary (1st Level) Safety Features
- Secondary (2nd Level) Safety Features
- Charge Control Features
- Gas Gauging
- Lifetime Data Logging Features
- Authentication
- Power Modes
- CONFIGURATION
-
- Oscillator Function
- System Present Operation
-
- BATTERY PARAMETER MEASUREMENTS
-
- Charge and Discharge Counting
- Voltage
- Current
- Auto Calibration
- Temperature
-
- COMMUNICATIONS
-
- SMBus On and Off State
-
- SBS Commands
- APPLICATION SCHEMATIC
-
- bq20z45-R1-MSDSpdf
- 材料成分表MCL of bq20z45DBTR-R1pdf
- L2703-01均質材料宣告表090810 BQ20Z45DBTR-R1-MCDpdf
-
- 8431-BQ2941028101pdf
-
- BQ29410pdf
- BQ29410 DSpdf
-
- FEATURES
- APPLICATIONS
- DESCRIPTION
- FUNCTION
- ABSOLUTE MAXIMUM RATINGS
- PACKAGE DISSIPATION RATINGS
- RECOMMENDED OPERATING CONDITIONS
- ELECTRICAL CHARACTERISTICS
-
- OVERVOLTAGE PROTECTION
- DELAY TIME CALCULATION
-
- APPLICATION INFORMATION
-
- BATTERY CONNECTIONS
- CELL CONNECTIONS
-
- bq29410-1pdf
- L2703-01均質材料宣告表090810 BQ29410DCTRG4pdf
- 材料成份表(MCL)pdf
-
- 8410-5X0501360101D6X-050-Apdf
-
- 承認書封面(D6X-050-A)PDF
- D6X-050-A SPECpdf
-
- Image1
- Image2
- Image3
- Image4
- Image5
- Image6
- Image7
- Image8
- Image9
-
- MSDS D6X-050-Apdf
- GLW MLD(MSDS)pdf
- MCD_D6X-050-Apdf
- CE_2009_85419 D6 Seriespdf
- 綠色產品保證書pdf
-
- 8448-11032F300A02 ESTA4103F3435F-30030SCpdf
-
- XGPU2E316651 - Thermistor-type Devices - Component-E WAYpdf
-
- ulcom
-