nonlinear optical materialsnonlinear optical activity and to improve the physical properties of...

240
AD-A198 305 .( A OPICAL WORKSHOP OF GANIC DAND OLY MERIC NONLINEAR OPTICAL MATERIALS sponsored by THE DIVISION OF POLYMER CHEMISTRY AMERICAN CHEMICAL SOCIETY DTIC AUJ1 ,6 TQN MAY 16- 19, 1988 VIRGINIA BEACH, VIRGINIA

Upload: others

Post on 05-Jul-2020

12 views

Category:

Documents


0 download

TRANSCRIPT

Page 1: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

AD-A198 305

.( A OPICAL WORKSHOP

OF GANIC DAND OLY MERIC

NONLINEAR OPTICAL MATERIALS

sponsored by

THE DIVISION OF POLYMER CHEMISTRY

AMERICAN CHEMICAL SOCIETY

DTICAUJ1 ,6 TQN

MAY 16- 19, 1988

VIRGINIA BEACH, VIRGINIA

Page 2: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

S Cdi'FTINF%1OFTHIP,

REPORT DOCUMENTATIO4I PAG6Ela. REPORT SECURITY CLASSIFICATION 1b. RESTRICTIVE MARKINGS

UnclIass if ied _______________________

2a. SECURITY CLASSIFICATION AUTHORITY 3. DISTRIBUTION/ AVAILABILITY OF REPORT

______________________________ Approved for public release;

2b. DECLASSIFICATION / DOWNGRADING SCHEDULE Dist r ibut ion unlIi mit ed

4. PERFOR~MING ORGANIZATION REPORT NUMBER(S) S. MONITORING ORGANIZATION REPORT NUMBER(S)

&FOR.R-88-.07186a. NAME OF PERFORMING ORGANIZATION 6b. OFFICE SYMBOL 7a. NAME OF MONITORING ORGANIZATION

Amieri can Chemnical Society (If applicable) AFOSR/NC

6c. ADDRESS (City, State, and ZIP Code) 7b ADDRESS (City, State, and ZIP Code)

Polytechnic University Bldg. 410Brooklyn, N.Y. 11201 Boiling AFB, D.C. 20332-6448

Ba. NAME OF FUNDING/ISPONSORING 8b. OFFICE SYMBOL 9 PROCUREMENT INSTRUMENT IDENTIFICATION NUMBER

AFOSR NCAFOSR-88-0221

Sc. ADDRESS (City, State, and ZIP Code) 10. SOURCE OF FUNDING NUMBERS

AFS/CPROGRAM IPROJECT ITASK WORK UNITBoln FWahntn C 03-48 ELEMENT NO. NO. NO. IACCESSION NO.Bo~ingAF, VshngtnDC 032-64861102F 12303 A3

11 TITLE (include Security Classification)

Organic and Polymeric Nonlinear Optical Nhterials

12. ERSOAL UTHO(S)Gerti , D. J. and Tripathy, S. K.

13a. TYPE OF REPORT 13b TIME RED, 14. DATE OF REPORT (Year, Month, Day) 5 PAGE COUNTFinal FRT0ME -88OT05-19-88 8//

16 SUPPLEMENTARY NOTATIONWorkshop on Organi c and Pol ymeri c Nonl inear Opt ical Nbterial s, Mey 16-19, 1988at Virginia Beach, VA.

17. COSATI CODES 18 SUBJECT TERMS (Continue on reverse if necessary and identify by block number)FIELD GROUP ISUB-GROUP nonilinear opt ical mraterial s, second order nonl inear

Iopt ical suscept ibilIi ty, thi rd order nonl inear opt icalI susceptibility, electro-optic, nonlinear optical devices

19. ABSTRACT (Continue on reverse if necessary and identify by block number)

4"tthis Workshop on Organic and Polymeric Nonlinear Optical Nbterials, the latestdevel opment s in the areas of theory, characteri zat ion, synthesi s, mol ecuiar asserrbl ies,and potential device applications for organic and polymeric materials exhibitingnonl inear opt ical behavi or are dliscussed. 1:1 P',:>11.

120. DISTRIBUTION /AVAILABILITY OF ABSTRACT 21. ABSTRACT SECURITY CLASSIFICATION

22a. NAME OF RESPONSIBLE INDIVIDUAL 22b. TELkPHONEo(nclude Area Code) 22c. OFFICE SYMBOL

DD FORM 1473.84 MAR 83 APR edition may be used until exhausted. SECURITY CLASSIFICATION OF -HIS PAGEAll other editions are obsolete. UNCLASS IF IED

Page 3: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

INTRODUCTION

The objective if the workshop was to provide a forum for

the sharing of information and the discussion of device

applications in the area of organic and polymeric nonlinear

optical materials. The workshop addressed the issues of

theory, characterization, synthesis, molecular assemblies,

and potential device applications. Multidisciplinary

interactions are vital to the addvancement of research in

this field, and the seventy-six participants included

scientists from the USA, Japan, UK, France, Germany, and

Canada and represented academic, industrial and government

laboratories.

WORKSHOP FOCUS

The workshop focus was divided into five half-day

sessions and addressed the following topics.

Theory: Current theoretical work on nonlinear optical

interactions in organic and polymeric materials was reviewed,

with a focus on understanding the microscopic properties of

these systems and their correspondence to the macroscopic

properties. The value of modelling these systems and the

usefulness of the theoretical projections for determining

structural requirements for enhanced nonlinear optical

activity was discussed.

Characterization: Experimental studies to deteimire the

second and third order nonlinear optical suscept:Ailities of

organic and polymeric systems was discussed. Limiting values

i6'Approvitor publiireleas.1 distribution unlimited.

Page 4: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

for device applications derived from characterization studies

were presented.

Molecular Assemblies: Characterization measurements have

been carried out on many materials in a variety of forms to

provide information on structure-property releationships.

Molecular order is essential for second order nonlinear

rUcal effects --.-.d may on.ha... third order effects.

Therefore, control of molecular orientation in these systems

is important. Useful molecular assemblies, including

Langmuir-Blodgett films and electrically poled polymer

systems were discussed.

Synthesis: The synthesis of organic and polymeric systems is

most effective when carried out in conjunction with

theoretical development and characterization efforts.

Examples of how synthetic efforts can be used to enhance

nonlinear optical activity and to improve the physical

properties of materials under consideration for use in

devices were presented.

Device Applications: Discussions addressed the current

status and the future potential of devices utilizing organic

and polymeric nonlinear optical materials.

SUMMARY

The Workshop on Organic and Polymeric Nonlinear Optical

Materials was very successful. The informal atmosphere

encouraged informal discussions, of particular importance in

this interdisciplinary field.

2

Page 5: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

A Topical Workshop

ORGANIC AND POLYMERIC

NONUNEAR OPTICAL MATERIALS

sponsored by

The Division of Polymer Chemistry

AMERICAN CHEMICAL SOCIETY

May 16-19, 1988

Virginia Beach, VA

Co-ChairmenDiana Gerbi Sukant Tripathy

The generous support of the contributors is gratefully ack-nowledged: Air Force Office of Scientific Research, Officeof Naval Research, Du Pont Company, Hoechst-Celaneseand 3M Company.

Page 6: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

Monday Evening, May 16, 1988

3:00-9:00 p.m. REGISTRATION6:30-9.30 p.m. WELCOMING RECEPTION

PROGRAM:

Tuesday Morning, May 17, 1988

8:15 A.M. Opening Remarks

8:20-9:10 A. "An Overview on Nonlinear Optical Polymer Sys-tems and Devices" by D.R. Ulrich (Air Force Of-fice of Scientific Research)

9:10-10:00 8 . "Nonlinear Optical Effects in Polymeric Films" byP.N. Prasad (State University of New York atBuffalo)

10:00-10:30 Break

10:30-11:20 C. "Recent Advances in Nonlinear Optical Proper-ties of Organic and Polymer Systems" by A.F.Garito (University of Pennsylvania)

11:20-12:10 D. "Conjugated Polymers and Nonlinear Optics" byS. Etemad (Bell Communications)

Lunch

Tuesday Afternoon, May 17, 1988

1:30-2:20 E. "Anisotropy of the Third Order Nonlinear Optical

Susceptibility in Conjugated Polymers" by A.J.Heeger (University of California at Santa Bar-bara)

2:20-3:10 F. "Nonlinear Optics in Ordered Molecular Sys-

tems" by K.D. Singer (AT&T)

3:10-3:40 Break

Page 7: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

3:40-4:30 G. "Several Series of Novel Polydiacetylenes forNonlinear Optics" by H. Nakanishi (ResearchInstitute for Polymers and Textiles, Japan)

4:30-5:20 H. "Resonance Effects in Cubic Hyper-polarisabilities of Conjugated Polymers, by F.Kajzar (CEN Saclay, France)

Wednesday Morning, May 18, 1988

8:30-9:20 . "Nonlinear Optical Measurements on LiquidCrystals and Quasi-Liquid Crystals" by Y.R.

Shen (University of California at Berkeley)

9:20-10:10 J. "Nonlinear Optical Effects in Conjugated Sys-

tems" by D. J. Gerbi (3M Co.)

10:10-10:40 Break

10:40-11:30 K. "Optical Nonlinearity: Molecules, Assembliesand Wave Phenomena" by G. R. Meredith (E.I.

DuPont DeNemours and Co.)

10:30-12:20 L. "Characterization of Polymeric Nonlinear Opti-cal Materials" by G. Khanarian (Hoechst-Cel-anese)

LUNCH

Wednesday Afternoon, May 18, 1988

1:30-2:20 M. "Preparation and Characterization of Organo-Transition Metal Langmuir-Blodgett Films" by T.Richardson (University of Oxford, U.K.)

2:20-3:10 N. "Optical Properties of Organized Assemblies"

by S.K. Tripathy (University of Lowell)

3:10-3:40 Break

3:40-4:30 0. "The Nonlinear Optics of Langmiur-BlodgettFilms" by I. Peterson (GEC Research, Ltd., GreatBritain)

Page 8: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

Wednesday Evening, May 18, 1988

6:00 p.m. POSTER SESSIONWine & Cheese

8:00 p.m. BANQUET

Thursday Morning, May 19, 1988

8:30-9:20 P. "Advances in Organic Electro-Optic Devices" byR.S. Lytel (Lockheed Research and Develop-ment)

9:20-10:10 Q. "Organic Nonlinear Optical Devices and Mater.ial Considerations" by B.K. Nayar (British Tele-com Research Laboratories, U.K.)

10:10-10:40 Break

10:40-11:30 R. "Towards Nonlinear Optical Applications ofPolydiacetylenes" by M. Thakur (AT&T)

11:30-12:20 S. "High Resolution Laser Spectroscopy in Poly-mers" by D. Haarer (Universitat Bayreuth,West Germany)

12:20 "Closing Remarks" byK.J. Wynne(Office of NavalResearch)

** * *.***.** ** ****..*.****'**** O QQ Q

Page 9: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

List of Registrants

"ORGANIC AND POLYMERIC NONLINEAR OPTICAL MATERIALS"

MAY 16 - 19, 1988Virginia Beach, VA

Gregory L. Baker David B. CottsBelicore KRI International331 Newman Springs Road Advanced Materials Lab.3X-275 19-9 Torishima 6-ChomeRed Bank, NJ 07701-7020 Konohana-ku(201) 756-2932 Osaka 554, Japan

(06) 466-2531

David N. Beratan

Jet Propulsion Laboratory Daniel R. Coulter4800 Oak Grove Drive Jet Propulsion LaboratoryM.S. 67-201 4800 Oak Grove DrivePasadena, CA 91109 M.S. 67/201(818) 354-6548 Pasadena, CA 91109

(818) 354-3638Murrae J. BowdenBellcore William Daly331 Newman Springs Rd. Department of ChemistryRed Bank, NJ u,701 Louisiana State University(201) 758-3360 Baton Rouge, LA 70803

(504) 388-3237Michael E. BoyleNaval Research Laboratory John EichelbergerPolymeric Materials Pennwalt CorporationNRL Code 6123 900 First AvenueWashington, D. C. 20375-5000 P.O. Box C(202) 767-2472 King of Prussia, PA 19406

(215) 337-6729Eve ChauchardDept. of Electrical Engineering Susan ErnerUniversity of Maryland LockheedCollege Park, MD 20742 0/93-50 B/204(301) 454-6834 3251 Hanover St.

Palo Alto, CA 94304Paula Cockerham (415) 424-3131Martin Marietta Labs1450 S. Rolling Rd. Shahab EtemadBaltimore, MD 21227 Bellcore(301) 247-0700 Room 3X-291

Red Bank, NJ 07701(201) 758-2942

Page 10: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

Warren T. Ford Alan J. HeegerDept. of Chemistry Polymer instituteOklahoma State University University of CaliforniaStillwater, OK 74078 Santa Barbara, CA 93106(405) 624-5946 (805) 961-2001

Keith A. HornRobert P. Foss Allied-Signal Co.E.I. du Pont de Nemours & Co. Engineered Materials SectorCR&D Box 1087RExperimental Station E328/215 Columbia Tpke & Park Ave.Wilmington, DE 19898 Morristown, NJ 07960(302) 695-4367 (201) 455-3022

Anthony Garito Phelps JohnsonDept. of Physics Rohm & HaasUniversity of Pennsylvania P.O.Box 219Philadelphia, PA 19104 Bristol, PA 19007

(215) 785-8552Diana J. Gerbi3M Company Francois Kajzar3M Center Bldg. 201-2E-08 CEA IRDI D. LETISt. Paul, MN 55144 Dept. d'Electronique et(612) 736-2557 d'Instrumentation Nucleaire -CENIS

91191 Gif Sur Yvette CedexFrederick J. Goetz FrancePennwalt Corporation (33)1-69-08-6810900 First AvenueP.O. Box C G. KhanarianKing of Prussia, PA 19406 Hoechst-Celanese(215) 337-6758 86 Morris Ave.

Summit, NJ 07901Robert Gulotty (201) 522-7918Dow Chemical Co.CRIMCL Bldg. 1776 Peter LeungMidland, MI 48674 3M(517) 636-2861 St. Paul, MN 55144

Dietrich Haarer Richard LytelExperimentalphysik IV LockheedPostfach 101251 R-202 D-9720University of Bayreuth 3251 Hanover St.Bayreuth D-8580 Palo Alto, CA 94304Federal Republic of Germany (415) 424-2363(0921)55-3240

Michael HaydenUnisys Corp.P.O. Box 64525M.S. U1L14St. Paul, MN 55164(612) 456-3669

Page 11: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

-3-

Robert J. McMahonDept. of Chemistry 6-427 British TeecomM.I.T. R2121Cambridge, MA 02139 British Telecom Research Labs.(617) 253-4546 Martlesham Heath

Michael A. Meador Suffolk IPS TRE, U.K.

NASA Lewis Research Center Moris K. Niknam21000 Brookpark Road Chemical Abstracts ServiceM.S. 49-1 2540 Olentangy River Rd.Cleveland, OH 44136PO.Bx31(216) 433-3228 P.O. Box 3012

Columbus, OH 43210

Gerald Meredith (614) 421-3600

E.I. du Pont de Nemours & Co. Raphael OttenbriteExperimental Station Dept. of ChemistryCR&D 356 Virginia Commonwealth UniversityWilmington, DE 19898 Richmond, VA 23284(302) 695-4984 (804) 367-1298

Joann MillikenOffice of Naval Research Joseph W. Perry800 N. Quincy St. Jet Propulsion LaboratoryArlington, VA 22217 4800 Oak Grove Drive(202) 696-4409 M.S. 67-201

Pasadena, CA 91109

Jovan Moacanin (818) 354-5794

Jet Propulsion Laboratory Ian Peterson4800 Oak Grove Drive GEC Research Ltd.M.S. 122-123 Hirst Research CenterPasadena, CA 91109 Wembley, U.K.(818) 354-3178

Machiro Nakanishi Juergen L. W. Pohlmann

Research Inst. for Polymers & Textiles Dept. of the Army, USACECOM

-1-1-4 Yatabe-Higashi Center for Night Vision

Tsukuba 305, Japan & Electro-Optics

(0298) 54-6310 AMSEL-RD-NV-L, Bldg. #317Fort Belvoir, VA 22060-5677

Piero Nannelli (703) 664-1432Pennwal t Corporation Pamela Porter900 First Avenue Martin Marietta LabsP.O. Box C 1450 . Rolling Rd.King of Prussia, PA 19406 Baltimore, MD 21227(215) 337-6367 (301) 247-0700

Page 12: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

-4-

Richard S. Potember Y. R. ShenJHU/Applied Physics Lab. Physics Dept.Johns Hopkins Rd. University of California, BerkeleyLaurel, MD 20707-6099 Berkeley, CA 94720(310) 953-6251 (415) 602-4856

Paras Prasad Kenneth SingerDept. of Chemistry AT&T Engineering Research CenterSUNY at Buffalo P.O. Box 90052 Acheson Hall Pricnceton, NJ 08540Buffalo, NY 14214(716) 831-3026 Karen Stetyick

Johns Hopkins UniversityTim Richardson Applied Physics Lab.Oxford University Johns Hopkins RoadDept. of Engineering Science Bldg. 2, Rm. 252Parks Road, Oxford OXl 3PJ Laurel, MD 20707England, U.K. (301) 953-6242(0865) 273092

Albert E. StiegmanGareth Roberts Jet Propulsion LaboratoryDept. of Engineering Science 4800 Oak Grove DriveUniversity of Oxford M.S. 67/201Parks Road Pasadena, CA 91109Oxford, OXI 3PJ (818) 354-4857England, U.K.

Shao-Tang SunGuerino Sacripante Hercules Inc.Xerox Research Center of Canada Rt. 48 & Hercules Road2660 Speakman Drive Wilmington, DE 19894Mississauga, Ontario (302) 995-3112Canada L5K 2L1(416) 823-7031 Murial Thakur

AT&T Bell LaboratoriesMarcia L. Schilling 600 Mountain Ave.AT&T Bell Laboratories Rm. #6C-312600 Mountain Ave. Murray Hill, NJ 07974R. IA-234 (201) 582-2522Murray Hill, NJ 07974(201. 582-6434 John M. Torkelson

Dept. of Chemical EngineeringPaul J. Shannon Northwestern UniversityNexcules Inc. Evanston, IL 60208at 48 & Hercules Rd. (312) 491-7449VWilington, DE 198941302) 995-3854

Page 13: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

-5-

Donald R.- Ulrich Kenneth WynneAir Force Office of National Science FoundationScientific Research Materials ResearchBolling AFB 1800 G Street N.W.Washington, D.C. 20332 Washington, D.C. 20550(202) 767-4963 (202) 696-4410

Maria M. Vida Frederick C. ZumstegChemical Abstracts Service E.I. du Pont de Nemours & Co.2540 Olentangy River Rd. Experimental StationColumbus, OH 43210 CR&D E356-213(614) 421-3600 Wilmington, DE 19898

(302) 695-1485Jane C. VoglDivision of Polymer ChemistryPolytechnic University Accompanying Guests333 Jay St.Brooklyn, NY 11201(718) 260-3125 Mrs. G. Khanarian

Mrs. G. Meredith (Leslie)Otto Vogl Mrs. S. ThakurHerman F. Mark Prof. of Poly. Sci.Polytechnic University333 Jay St.Brooklyn, NY 11201(718) 260-3180

Bruce D. WebberAmoco Technology Co.P.O. Box 400, F-4Naperville, IL 60566(312) 420-4670

James K. WhitesellDept. of Chemistry'University of Texas at AustinAustin, TX 78712(512) 471-1094

C.C. WinterBritish Telecom Research LabsRt 2333Martlesham Heath, IpswichEngland, IP5 7RE, U.K.

Page 14: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

"ORGANIC AND POLYMERIC NONLINEAR OPTICAL MATERIALS"

May 16 - 19, 1988Virginia Beach, VA

List of Registrants: Addendum

Jan Bartus Francis WangH.F. Mark Dept. Lawrence Livermore National Lab.Polytechnic University L-250, P.O. Box 808333 Jay Street Livermore, CA 94550Brooklyn, NY 11201 (415) 422-7305(718) 260-3403

Michael A. LeeDept. of PhysicsKent State UniversityKent, OH 44242

T. MookherjiTeledyne Brown EngineeringM.S. 52300 Sparkman Dr.Huntsville, AL 35807(205) 532-2875

Peter Palffy-MuhorayLiquid Crystals InstituteKent State UniversityKent, OH 44242

Wei-Fang SuWestinghouse R&DPittsburgh, PA 15235(412) 256-2096

Laren TolbertGeorgia Institute of TechnologySchool of ChemistryAtlanta, GA 30332(404) 894-4043

Eric Van StylandCREOLUniversity of Central Florida12424 Research ParkwaySuite 600Orland!,, FL 32826(407) 'j8-6814

Page 15: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

"ORGANIC AND POLYMERIC NONLINEAR OPTICAL MATERIALS"

May 16 - 19, 1988Virginia Beach, VA

List of Registrants: Addendum #2

William KrugBoeing Electronics High Tech CenterP.O. Box 24969M.S. 7J-27Seattle, WA(206) 865-3033

James Le MayLawrence Livermore National Lab.P.O. Box 808Livermore, CA 94550(415) 422-7305

Edward MiaoBoeing Electronics High Tech CenterP.O. Box 24969M.S. 7J-27Seattle, WA 98124(206) 865-3027

George RayfieldUniversity of OregonEugene, OR 97403(503) 382-4100

Nan-Loh YangChemistry Dept.St. George CampusCCNY50 Bay St.Staten Island, NY 10301(718) 390-7994

Stanley C. IsraelDept. of ChemistryUniversity of LowellLowell, MA 01854(617) 452-5000

Page 16: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

A Topical Workshop

ORGANIC AND POLYMERIC

NONUNEAR OPTICAL MATERIALS

sponsored by

The Division of Polymer Cbemistry

AMERICAN CHEMICAL SOCIETY

May 16-19, 1988

Virginia Beach, VA

Co-ChairmenDiana Gerbi Sukant Tripathy

The generous support of the contributors is gratefully ack-nowledged: Air Force Office of Scientific Research, Officeof Naval Research, Du Pont Company, Hoechst-Celaneseand 3M Company.

Page 17: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

Monday Evening, May 16, 1988

3:00-9:00 p.m. REGISTRATION6:30-9:30 p.m. WELCOMING RECEPTION

PROGRAM:

Tuesday Morning, May 17, 1988

81 AOpening Remarks

8:20-9:10 A. "An Overview on Nonlinear Optical Polymer Sys-tems and Oevice-"'y D.R. Ulrich (Air Force Of-fice of ScientificReFsearch)

9:10-10:00 B. !- 'Nonlinear Optical Effects in Polymeric Films" byP.N. Prasad (State University of New York atBuffalo)

10:00-10:30 Break

10:30-11:20 C. -'4ecent Advances in Nonlinear Optical Proper-ties of Organic and Polymer Systemsf-,by A.F.Garito (University of Pennsylvania)

11:20-12:10 D. "Conjugated Polymers and Nonlinear Optics" byS. Etemad (Bell Communications)

Lunch

Tuesday Afternoon, May 17, 1988

1:30-2:20 E. "nisotropy of the Third Order Nonlinear OpticalSusceptibility in Conjugated Polymers" by A.J.Heeger (University of California at Santa Bar-bara)

2:20-3:10 F ... "4 onlinear Optics in Ordered Molecular Sys-tems," by K.D. Singer (AT&T)

3:10-3:40 Break

Page 18: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

3:40-4:30 r. vrlSeries of Novel Polydiacetylenes forNonlinear OpticgO by H. Nakanishi (ResearchInstitute fr Pol rs and Textiles, Japan)

4:30-5:20 H. flesonance Effects in Cubic Hyper-polarisabilities of Conjugated Polymers, by F.Kajzar (CEN Saclay, France)

Wednesday Morning, May 18, 1988

8:30-9:20 'onlinear Optical Measurements on LiquidCrystals and Quasi-Liquid Crystals'j- y Y.R.Shen (University of California at Berkje*)

9:20-10:10 J "Nonlinear Optical Effects in-Conjugated Sys-tems" by D. J. Gerbi (3Mco.)

10:10-10:40 Break

10:40-11:30 K. epical Nonlinearity: Molecules, Assembliesand Wave Phenomenat!'Py G. R. Meredith (E.l.DuPont DeNemnours-and-Co.)

10:30-12:20 L. ""'Characterization of Polymeric Nonlinear Opti-cal Materials" by G. Khanarian (Hoechst-Gel-anese)

LUNcH

Wedne, 4y Afternoon, May 18, 1988

1:30-2:20 M. "reparation and Characterization of Organo-Transition Metal Lan gmuir-Blodgett Filrnk-by T.Richardson (University of Oxford, U.K.)!

2:20-3:10 N. "Optical Properties of Organized Assemblies"by S.K. Tripathy (University of L-povtell)

3:10-3:40 Break

3:40-4:30 0. "The Nonlinear Optic~ of Langmiur-BlodgettFilms" by 1. Peoterson (G Reerh, Ltd., GreatBritain)

Page 19: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

Wednesday Evening, May 16, 1988

6:00 p.m. POSTER SESSIONWine & Cheese

8:00 p.m. BANQUET

Thursday Morning, May 19, 1966

8:30-9:20 P. "Advances in Organic Electra-Op tic Devicesi yR.S. Lytel (Lockheed Research and Develop-ment)

9:20-10:10 Q. "Organic Nonlinear Optical Devices and Mater-ial Consideratiomj 7by B.K. Nayar (British Tele-comn Research Laboratories, U.K.)

10:10-10:40 Break

10:40-11:30 R. "Towards Nonlinear Optical Applications of

Polydiacelylenes" by M. Thakur (AT&T)-,

11:30-12:20 S."High Resolution Laser Spectroscopy in Poly-mergs4by 0. Haarer (Universitat -Bayreuth,West Germany)

12:20 "Closing Remarks" byK.J. Wynne(Office of NavalResearch)

*** .** *** *** *** *** *.* X

Page 20: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

A-1

D. R. UlrichAir Force Office of Scientific Research

AN OVERVIEW ON NONLINEAR OPTICALPOLYMER SYSTEMS AND DEVICES

AoceSslon For

NTIS GRA&IDTIC TABUnannoun,ed ElJustif1cat 1o

ByDistribution/

Availability Codes

A.11.'l and/or)1ft Special

I!1III

. .. I.r,,..,.m -- a l m lm m

Page 21: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

A-2

14LO Response In PolymersURIEFEn.

1111oloomir Level - 11110nospic Piolaloa Rolated to Asihed

Dr. Donald R. Ulrich P0 - as+ Pas+ y1.1111osopic MLO - Odummugo Fromn Pokoftabom Reopeas. of

Directorate of Chemical & ow ake

Atumgpheric Sciences PME - XIE + Xmas XNE3a

* X0- a I , Third Order Nonlinear Prosing Le..TNarm4wonla Gowmrodo, SeN1-Fosoming

Phsi MWd Third Order Terms of Odd Power oflE Comaw toAN 111lorlois - Ce~oaloffmmui

o X 0 - Second Order Response Lo.. Sesoad Ilormnonis

* *,V In ---~ oftmvoeymmef Medium - Left* Coater of

Why NLO Polymers? Whz Will 14LO Polymers Fit In?

o LaIoW Nogwosoene Nooacio U5. :=goneo Low DC Ooloslits COaslana" 5.og UeoooLout Swifthing Enuwg11110p 0 POIM oy

9 Low Absorplon r--' '*Absence of DIffusion Probloms 2ntQm, I"

* ~0 o oofelsk Emee adom poafti Sesmio Foom o leperaler Oporooo 0011kfor lw - Now - 111-0 o

o Enwiiroonaial 11abilly-Osooey Cnms' wo"

e Uecilsnlcai and S1kiuhemi fniogrty oEVeO 11 Ww

o To*@* Mahrphaioe Co"Nemn

Page 22: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

A-3

Comparison of Optical Switching Optical Performance ComparisonTechno logieos Pmg es~~

Switch Osi 0 Flmecofis 0 maageecoege6 60 Ummlb moo son 0 Pwm e. &.ow "Me 1. Switch Off, T

Enrg Reqealed : Modele N :H N. M

6.. O."M P.~ Iia Man. Switch"g Net Dositnd by A Limite by A91 N " 0 areed BMWd of Close to Bentigep

Ia Shoq p t" SaucmSteijme Nto Prcse a- Mltws LO 30 Or", But Not

£ N 'N LO recesee Optical AmfiatIon"UF. h LUp These We. a.or THO

NoU AW toN9M 'U Absorption a -L (eAs 0 LargeINFot ~amCoefficient. a 104

5- aesocieled With

*Flgureo of Meods 0 High 0 ModeraeFoil a1 (I X ltr) J1.11 X 16onfRes"oal

Mechnis s ofFou Wav MiingResearch DirectionsMehnsm fForWvIMxn MLO Polymer Requirements

Veas"i I~e Chat" 0 Noineam susceptbl~tiesa 310-4 seoi I anwa- Resonant ws Nonqeonans

Ros" m5a"MRsnn OReo oIe Ease of ProcaselnigExcited Stle at no Vbraioal Oataei em isactars - sokltvt

I Phalac0thetMNSIe tat slw ao CARSI. CSSS )g a Thin Film of Reasonable Optical Qualty

-Transparency

tie-,Xsg Co Limpold Croeteb enlomn. tbl

~ I :Loe witIng1 Energy (PJ.. Diode Lasers)

a 1-49 0Characiarizalt and Separation of Elselc Moleculeor.Tharmetl and Chaoge Carrter Contibution Mechanism toReapaaes Tiae

Page 23: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

A-4

Stats 14O Plyme ClasesSecond Order Polymers forStats NL Polmer lasss Eectrooptical Devices

Cie" E*am"Oft KLO Fimi;1l * OgijOft Sie Chain StUuolut

ISO Troic Glass"a X0. X0

PT.. POL

Liquid CQysallne side chow X4Polymaqa iLCP) LCPS

Rigid Red PGT LCPS* X6igh~f Activit palymw LI46O,Aigmnada PoHOAlwaOcO efts For SlO VA -20 llmN 10 PW

Padyocd~iAlaaa fip iayXI For Itestrmod"~ . as VffV 30 VmiV

SX 0 M..L10

S liwadeutSe00n40I tflesSpin Coetb for Thin Film WOV61111111111

2.4 No"mLow Dkldactrie ComltaftI ( It wem 3

Low Laes < 11 f t "M

Tg - 120*C

Momlilear Chromophores CovaientlyUnked to Glassy Polymer Constructs

Moncentresymmetric AssemblySywIla and Poll" of Coaiewly.Afla&*ww~a

PafyMam for Fmr"uen OVuA""1. put emMeowDependence of SHG On Poling Field

-. ~~~ C~ S~gwllcniN.aaa Clureaplate AllNVaI~

A.A ~n1.2 d%3 IPSICH 2 -. 16- "Ma

me. * - . KOP . 1.1 x 10-4 "a

me .

& m. * jDSt 0.41

i0.2

IL Aftoee 00 S.1 0.2 0.3

PON" P#011id OUvfmI

Page 24: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

A-S

FUNCTIONALIZATION OF POLY (-IiYDROXY- p i -;F 7:-,'

STYRENE) WITH NLO CHROMOPHORES TIME DEPENDENCE OF d3 o1.2

T0a

0.4-

P 000 12000 24000 :36000 46000

TIMIE (minutes)

Values for X(31, Eg. W From SemlemplricalCalculations and Experimentally Determined

(PS )O-NPP FILMS y(HOMO) 2 Delocallzation Length for PrototypeEFFECTS OF .0NNEAUING Ladder Polymers and Polyacetylene

1.2

C NcL:Pdyuw EgjaV) wfeg X41~ ISOUl

IIPdstu PII IS S 16O- 2

0 0.8 2

- - -7 rJN71 N U A N NC I PuW nd e PXL 31 3. 2 X 10 - 26

00.0

TIMSEte (mnues

Page 25: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

A-6

Implications of y(HOMO) 2 Dependence of y(-3w. w, w. w)

Delocalization Experiments For On Chain LengthMLO Polyn'en Synthesis

-ewfee L- %02 PAimns a" asmw aiO Mbe*

*NW 00~sw At wm Nsay Chains. g a IS 06a0 a" 10.

0 adrPaa May be Slv e In U Ope CaiailexSIWAIsaus1 -Imse Wv Odllal Overlso WO

Load to dwd Enh 04e oafttao"sad Red Optical~.

Application of Dalton's Results -t -I.

* Solubl~ed Ladde PQIynee IIy Lewis AcidChwrg Traneler

iRigd is mlwb~

Page 26: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

A-7

*LINEAR OPTICAL ANDPUSYNCHEMIC POLymER

THERMAL FFCTECLOM OLYER

CIN SOLID GAS LAUESEARSIY LEDFLS MO DEMAII OCKNEDRT

THERMAL EFFEC PLMERS*f LYERS

LM SOMLD STTELAARTSAT LASERS

STATE LASERSILAPONDMPEDCOVSRY-~~P*O CT SOIESTSET)ER

OIED SWOTCH -~lR * SUE ANCD

- WAVELENGTH RESPONSE10VER VISIELE ANDNEAR 14RI

J RECTION EFFICIENCY

-=E IIEFORE AND AFTERTUNIADE FILTERS WSWITCHING

-HIGH DAMAGETHRtESHOLDS I tW/-I

* Low INSERTION LOSSES_______AND MINIMALt RETROFIT

OPTIAL LIMI1ATER C09APEXITIES

Page 27: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

A-8

TIMEFIELD OF VISION

*PROTECT AGAIST RAPIDLY TUNAKlE. PULEDVISILE AND NEAN INO LASER THREATS TO MIGMGAIN OPTICAL SYSTEMS,I ISEPIA FOR RANGSFINOERS. VISUALSENSORS. CAMERAS. AND MOSTIMPOIRTANTLY. THE EYE

Third Order PolYmers forOptical Devices Phthalocyanines

*PlaEr, Slmotur. W~it Exenwea.T btlsIII

M~ - NOAiH

OMSil In Pen Pnm. C4A4LWgad Otf.Ngito SyStem oR Ne16inng with Nueffw Mejiagini,

Lwwas comiaml aLarge NLO response discovered by A. GaritoH4 Aih os"l Timillp SgfaatMe£wog- 11lalf N2 ftlf ASO&" N" *"ilna Numerous variants synthesized to tailor

* znNw SION NLO activity$Onee COGIOWe Fa Thi Fil SaWM Fabrication properties

Opplliriamip00.Nui Pvoeggm,

Page 28: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

A-9

Basic Structure of an Optical Neural Network -

Input Plane OpticM: mplmened Output Planeof Neurons Inecnetos of Neurons

"A -- N NX(WI). an ,

Angular Dependence of Reflected X13) forOriented Trans-Polyscetylene by Third

Harmonic Generation Third Order Response in

1.0 Polyacetylene

0.8 0 ResoelI Process

- Pholoaiclied Noodoesi Excitation*s0.6 - Associated 31lruhues 0#61011160,1 11101110111.

filpealmoe. Polere"s Reponible for Large Shifts 01P(3OeclI6etar Siromgb Oboserve With Reomem Pumpng

0.4 - Commosese of Elocilem-Ptwetwe intetac~-Efectreuila AReneni Ea 1ueh

04 -- Nmedlet. Dissiphtion Prodoum, s 6mer

0due so too~ Ino Pum

Transtait or Guide Light

Page 29: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

A-1O

Degenerate Four Wave Mixingof Biaxial PUT

Third Order MLO Response of Ordefred P ol.mSrT,, l

Ordered Polymers

C a l ln w 011 d R e d 0 w Pea Fiw I

R d

co*.pabuo utoongJam w

GA- Trees,UnWial PINT - Thid Hanwnmslo - Xto 14

Ganoalie INT

aulial PUT - Degenwmva Few - Xi 10- osew .2" *Wellf Mizng 0.0

(0FWIM -1$ -10 -S a 5 10 1s

UonaleA PRO - 0o900"i Few - XO is X l*-

,, fe. P9

____o____U -_I__. OPWM sign

O RsqmmosS l Film Quiely - Avoid Iah-eomUp Graft or F"ious Romoom bComponets Which 5.8dmr Lgh iNT A-.

0.2 -

-4 -3 -2 -1 0 1 2 3 4 5PS

Nonresonant ThirdOrder Susceptibility X(3 ) in

Blaxial PBT X ( ) Polymers for Fibers0 OoCgoloxute Four We" Mixing

Pr Plot D O

X'4 As aFunevi of Film NmloUn~

o • X' units have modest activity but very

low absorptiona * Polymer backbone conlers secondary properties

- Spinability•Shear and elo~gationlal flow yield alignment

* New Pmalg fox T'N Ouwar Dmoeo Anqimrogia X0 Mmetotl fo Ogfosny.aoa'emd

Ihw nfl ilm AItleauo

Page 30: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

A-1l

X43) Materials J OLYALXYLTH IPME

Thin Limit Thick LimitProperties Properties __________

a Near reasonance at Non resonantaHigh n2 *Lower n2*High absorption (a) *Very low absorption 4

Material Mater"a* Phhaloyanees *Side chain polymer

Application Application*Etalons * NLO fibers2*All optical SIM's a All optical switching

Advantages Advantagesa, Fabrication ease a, Fiber spinning easea, Room temperature operation le Potentially highestoa, Potentially highest n 2 materials n2 /a materials2 2345

74. 11k. - ent I= 1484101 si l 554111 few a 20 LaY.?

S. 554 ob 4114V U 6MM Sbe. iA nMO W 412w anenammim ON~e*am as 3"S

OVANUR wllesu

'0lT~I IIYIPI OSASYS wilt

0 Omani lt 011IMM(IW 1111EIII

I.., tClestll AS"f~l ASChS(IIE(MAE 411

o SM~lt'*11? 114i1timlguc SIEMIIOS IItI/

* ~ ~ ~ ~ o tS Uti 1 *1 1 11 (1 5 L C C C o m p o s ite

~ * *.>~. * d-cc (Raytohscanfegmrmtegire)* .Randomly oiseowed LC msctxodropit

1. *Low scatin - hazy blue to tanspareri*Keir malnal with positive n

006

am

am

002

CISW SiOMIOS(5

Page 31: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

A-12

ADVANCID POlYFIE MENDS AND OPIICS

Sjhiina ~rohm Oaefiif man 9kufulan nss min

amimot YOgs

o Isuoeoic 0 DOWS AL PIIA[Os0 P0418 0 LADDIea OBtlLlo 0 ORDERED

t1990 - { 5153 - ALLOYS

0 SILUIANDUCES 0 NEAR Off RESONANCE

0 SM I-OIAMliZS 0 PLANS,

PARAtiLL COPPUIh6

AlsolpIioMl I IMWIIS

4OIICULAR (OMIOIPSAIIOIS AND 511(EI

I(VIIOPHIMI Of AtIIIMAiIV[ HllRODOlOIIIS. SUCHN AS 110111 1 I1) APlIIIAIII'

STAt ISIICAl AVERAGING 01 OlI(MIAIog 111(1t GAS MODMIW

IAllSII(Al AVINAGIMS 0f CHAIR t[9uiss

illicls Of IM1useON1CUt~e IMIIMACTIONS O0l Sug~h HOIICWE DIG p#OpIRIjS

(IIICIS 01 Ilt(lNOICUIA IRMACIIOMS 00 PMIICII CONUOtNAIION AMA SIll,( 111of

('F(CI Of IMIit"CHICUlse IMIIAIioOS 00 AMMIA III ASIIIICIUgI

THE KEY: INTERMOLECULAR INTERACTIONS,

Page 32: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

A-13

Status of Understanding for State-of-Art X(2) DevicesPolymer Design * Te@-Wave Smede lo*4U -,'a E~lreopll Modulator

Detlesd Sloepie.. Pofyes4m e 1e MIM AeuIn palie Mdlior

Neolbeerswich OV~es AeJy116V436V) 2112-10 112 1.3" Nen*WW OpftPoweeftet No 4' M'W) 0.5-5 0.03ihtiiiwX

" Petental Cmwludmw of 0 OdMisi to NI.O (8.0 Cres.Poe oAem W 056 .3

Froqmue" 4GO 5-24 >60

- Me Expected Veleat fMloww" ig mili Higher Frequency* A Qusalwe Correlaion neriwe. XA we Ekeepop Devices a Poesile With ptyNWOetucafzate Leegls 0 ~Eluei greg Co

" Effect Of DOM 111 ln,.nduli Cht Teft, - High Speed fler Murni P"roes!"nNeed o Cierfiud - 25 OfHi sea Target

SNegeded H5wmmfl Geeeradeu* 6411111110ar Th LadMift to Predi" meweeateuee ihElcinyD.Isg4 idWith Lw" Sftsi a111* nd Thug order (Gaoug-mel4&imLo

melecuie SsespwlUftee

Waveguide Devices

Ste (141 Guide Polymeric Electrooptic ModulatorModulator

mul"llayw td)ouie M adulator

2d ei eq.me (p "am In" OutputFabricationt RenewLngiol Laser Seem SinaOpICuig Cuplgesi. SecondOdo CCoddin .Cu~t

I \ E~lectrodeLaecowsfns ISNIS jAaye

n ~ fl Peltedle xde Film

Comupete Electrod F it Cladd ing

ModIultr Catle Elcod I. aye

All Oudee T~ :siarintion

Page 33: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

A-14

Traveling-Wave Waveguide State-of-Art X(3) Devices

54f I -0 Udmiiel *W Out 0 Far tm og m"x4

Liqilt I. * Liwg PaeIf In Mul~pbumig a"d DemollIlnq

- andle Oft" InputaL- vey u" x"'

* CAN Loed #aV- AN 0~aa Inhremaaint pt $Meiia Wch

- 0119a1 911114110001Y eOW We"~ OpOICal Inemfioa

* VOltage Vadmn A"ms fle Length - OPUbyWIW01 ~*A 114 a e&~(I. ; A IteSitadakwp

0 IPate Dvft pam~m0 *11 P-ade0 Palic Oed Oft Musuda Propertit" In a* Imedig Dvic PaameavmCoompllcagad Wey- Von*a" - Spend - n-,IaM~i by nDe Avi£shlci- Opmeca No"e sue - Lenglis - ParalfeaUAaelog P'eaung of 20 Imag- Of*ve Power - Impeae - PDee Caguge OtimM anme" Piece "wn

- SM F Poukgo *an" Appltianae

Mch-Zehnder All Optical VPTEA VSTAar ,

Modulator

S"OWS"~~PEA SheN"u"iiChomm1110101 FN

Saa

ILU z

Page 34: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

A*15

PIT~ Sr W@ * V N A

0 Poled Polymec Ilms

' I l citvn = Loeio 01661ionae 1oElsweetlcDevceAplication

* Flest Poiysmow Coaniel to Litu Hlobsio AePorteda Focus for Roeetach to Achieve Optinvum EleclroOptic

-4 Pstoel te Film Sudece

0 Nonfloeelse of 10-0 esu Larqp for Nontresonence butSO Hefdt to be Lager (- 0- "u few Broed Device

* Stage-ed-Al of 10-6 ev Wil Flind Aglctn InOpilca W.ve Guide Devices Such esOie iwtcliesmed Opically Conlrulled Memeusloe,

9 Thin Film Apgllllesn Such as Etalons Unlikety UnitesSlellcnI Advances Iln Largs NeetttineenltlesOtia

______________a."__4__11 _ Flae..and Optical CIty

~ Th. hs~ onma e Us a ... d

Page 35: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

B-I

P. N. PrasadState University of New York at Buffalo

NONLINEAR OPTICAL EFFECTS

IN POLYMERIC FILMS

Page 36: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

B-2

'~ LIS ' RC?5JY F iJC~~

C AEC'E

A.;AS 'I. 1-ASD AT -EPNSE 7-r- - AC AClu

CE~7~N CF'-Y LOW'CQ:LTCN7N

3ATE :NIVES" "F NEW y OR A T GGEL 3 UED "GE PROCE"3~-A~A~J~N7AE

SUFALC' NEW 'ORK '42 44 O~~CSRCLE

N OT E PiU1,RE~ D UiT ~A' YE D E SiA -R~A~'PRCCEBSING AND EV:C APD7ATNS

VI;p~ d'A I -,"ITAT(ON

" " IV C t ,t

0: c -* **

Page 37: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

8-3

MI CROSCOPIC THEORYOF

OPTICAL NONLflEAITY

La- KITIO SUE-OVE-STATES .... Sait-fIPIR CAL,

ScF NCCmUCIEi PPP CODO INDO

DEPEENaC. 4NUMERICAL ANALYTICAL FREGUENCY IT-COL7UGATED

MEYMD METHOD DEPENDENT SYSTEMISI ItYPERPOLARIZA ILITIES

FNTZ COUPLED RESONANCt EFFECTS LONG

FIELD PEtHURED CHA IN

NETHOD NAURT -FOCE POLYMERS

METHOD

1C7STATIC HYPEXPOLARIZABILM~ES OF

DO PI1NG

03.1: ! Vf Relative =orunct -f . and0 , cor4T1rit~iunsCMISTR LCI CO 1 L.;TER :EpyV16&NIS

WITH A C401:! .0 L.S~s SZT:~.l o1 f .Arlo~us electron w%~.rves

.- electron conju~oatO efte.-I OPTI7.I THE 'TUntY StXl SCP

Sign of TCALCULTE 'IPCU !A- A FuC-oTO OF FIEL'

£fiIIatoO' of v tensor PcLTUcT.:C.. - GET

1ffe:? of suostitIt~ils

conformational tft~ DIFECi CrYESO

Effect Cf Structual it~onfortt Alt aef.CS ORIT.. OS"~TO TI ART

I1011tons. Dolaroft an lAUooIIWIaAlOapsTOtO1

lUNTOR FLO.ST 011011 FIEU .UCNU

iemify strictufal Parmters STATIC sECO1 %YPAtA ItTES (II

for CINIWKn its)

tlMRS'.-4T VALUE

MlITS OF TIS 1e"tO&CH;

?UVGR',7: -.1T-PROFNPUMS UiMl

L.E E-.JI% ExcaDSM

Page 38: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

B-4SOME CONCLUSIONS CF ThEORE:CAL STUDIES F

"ICROSCCPIC SICNL .N4AR(TY

. THE CHO OF BASIS, PARTICULARLY THE RNCLUSON OF DIFFUSEPOLARIZATION FUNCTIONS. IS IMPOTANT IN DESCRISING TcHYPERPOLARZASLJTIES OF CONJLJATED SMA.L MOLECULES.

2. ' IS 'ANSOTROC. WITH THE COMONENT ALONG CHAIN

GROWING RAPOY FOR THE CONJUGATED HYDROCARBONS SERIESPOLYI INES. POLYYNES AND CUL LENES AS THE CHAIN LENGTH GROWS.

3.23. FOR POL.YNES, CHAIN LENGTH CEPENOENCE OF N IS FOUND.

5 5.3FREE ELECTRON MODEL AND HUCXEL MODEL PREDICT N AND NRESPECTIVELY

4. THE CORRESPONDING ORBITAL ANALYSIS SHOWS THAT THE SIGMA ANDr -ELECTRON CONTRIBUTIONS TO ARE OF OPOSITE SIGNS.

5. CONTOUR MAP OF TIR DERIVATIVE OF CHARGE DENSITY WITHRESPECT TO FIELD (REGIONAL CONTRTON ANALYSIS OF )CONDUCTED FOR POLYYNES. INDICATES THAT TE NONLNEARELECTRONIC DISTORTION IS A COOERATIVE EFFECT WITN ASUBSTANTIAL CHARGE TRANSFER ALONG THE ENTIRE .ENGTH OF -HECHAIN.

6. OUR SCF CALCULATION RESULTS FOR ( 'COMPARE WELL WITH THOSEOF TH SOS METHOD, BUT -( VALUES DO NOT AGREE.

7. IN THE SERIES RI - CC - R2. THE LONGITUINAL COMPONENT

-yZZZZ INCREASES AS mcE ELECTRON WITHDRAWS SROUPS AT l

OR R2 ARE SUBSTITUTED.

8. A COMPARISON OF y' FOR CIS'SUTADIENE , -RANS'9UTADIENE ANDTHIOPHENE REVEALS THE FOLLOWING ORDER

:

TRANS- UTAIENE) TI4OPN) CS- SUTADIENE

NIRP-ENE : : CnRSAE =;T jffl- :.-E I0E,:-

'r.,

BANE SAP/

3. loLI

f-l

I.. /

i $ * s

tC

Page 39: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

B-5

Of AA .. WOW* 0' C~J'

R <=> &o !

3 ,5,- : , . -3 1

<a>

.23 -z "

cvC-

14-SC CALAT0mIsIl

MECHANISMS OF FOUR WAVE MIXING

I IELECTRONI C MOLECULAR CHARGE

CARRI ERS

RESONANT NON-RESONANT RESONANT NON-RESONANT !.10 2 sec

EXCITED STATE n-non 2 1 VIBRATIONAL ORIENTATIONAL SEMICONDUCTORS1PHOTOCOIDUCTORS

EXCITED STATE n2dx 1 CARSCSRS xDYNAMI CS

tlO-12sec - 1 2sec 1012 sec

10-12sec CONJUGATED LIQUID CRYSTALS,-ELECTRONLINEAR POLYMERS

THERAL

ULTRASONIC PHONON THERMALMODULAT ION GRATING

•1O'Dsec 10-6 sec

I

Page 40: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

B*6

'S.' ~

b

a U

-- 0 0~ 0

i;~*- -~=

S-i

-c r~.

~ = a Cc

~4r

L.J

_ :r,1- 5- (,-~L.. _x~ 5- _ _ _ -~w - _

_ L~~J C),.

L.4 _ ~L~J

-~ L~J _ '-s,

L~J~J

(-) 5-

(J~

5--

5->-

4~) -J -J

- C~J rc, ~ _ -

Page 41: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

B-7 _ _ _ _

OESCAmr CAWE: Chajrge on Po I '0-*Saat.boe can biVariga .n aControlledwa-

RCSOC4ANT CAME: PhotoinaueeoS-Glitofl anmdBoPolarons createMOd Gap States

Re0:str~b)Jt,on ofOsCilator S renth~

Large XS tFast stesponse

11 OJO0-

A WW MID~qDO

ChBmcal @1. Electrochuobcal SwitchingOf etuaum High and La. States OE

~~ILYLij1CEI4- --* LB psED4- LMeO4F^- 0-A.or M j cM O

ILe.or- Aomop-pI o,

I/xA . ....

0

a

016 20

E/y0.O 3.0

MAME11 9 -vsm mI m=

Page 42: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

RAI'.iM SCATrERIkM

[(3)

CARS cm~

EXPE1I9NL~I

6Pxv 4 DCia (LOW &OL UTJ4* R

LF6:

fl Ira &i

IL I

*e NAH CAR 4d R 3

.30-8030.1 9.s jLY iY Ail;ithePH A~ 1

Page 43: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

.. r6. C-6rT.'

4W-.En C -. wr.o

B.T M 11. ea..

-5.a A 4- -

.m w 46% 'I o.&$

I-- 'ItPA

cr -. "O

or o----of -

88 6 .s I

Page 44: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

B-bEBu~~~o E':~

1- = E E' s

~sI-$O GO 4'u j QOILEQ r * K JOCMTO

awas* WTh SOLfLA.P-~ t &O~pp aw.e

:fV~Z WtT OF Xf' MmREJ. DATUKO.MON14 T 'U..mjn or U xQIT(S CW

3 -~i- S jVL -

Do~ K I'mf V;A AFE A.rk

I a O A *. S T tM A,.S!EftL 6 -0

11GX IIf JTPU 0MAOAC7 /M~l'-"M rt% $ M SS

a C ~0 - ~ W C 4, ms syst

no. Oft. C'.

Do. *- ft...-*

00. -. -. T

S.. O~M D S S. S . cc~

a, w

so,=~,P

Page 45: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

C-1

A. F. Garito

University of Pennsylvania

RECENT ADVANCES IN NONLINEAROPTICAL PROPERTIES OF ORGANIC

AND POLYMER SYSTEMS

Page 46: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

C-2

RECENT ADVANCES IN NONLINEAR OPTICAL PROPERTIESOF ORGANIC AND POLYMER SYSTEMS

A. F. GaritoDepartment of Physics

University of PennsylvaniaPhiladelphia, PA 19104-6396

ELECTN .. F E STATES: MIMI OF TI4M 0 NONUNEAR

OPTIAL SUISCEPTIBIRl OF CONJUGATED UNAEAR CHAINS

Page 47: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

C-3

/zf(1

4a% ,

.. IMP64

+w

_ _ _ _ _ _ Ior

313 ita.

7 . Z U

ig Z

a a.Qzut u-

NdOILVZI,Y2Oi3O MOV2313

Page 48: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

C-4

U. 41131 0 .m

I I"

z J0 z

00 0

o In l

CL 0

0 Z

.5 o 2

*A QW * I0a

j CL oS U.o

S /m t&~ CL u 0

Page 49: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

C-5

22

4 w w

0 319 U'* P.

UJ

w- 0

0m 0. 0 0

U0

ww

Page 50: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

C-6

........ ...............

ia

al i i ,

j Q

ac

0 CL

0 40 0

0 Lo 0000 0 0 < 0

0 i

3Z - I ' -S

0 x@~

/ -

W I- -- - - - - - .m- mmm m . d- , I- J.-.,

Page 51: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

C-7

DC INDUCED SECOND HARMONIC GENERATION AND Yg

aw EWE, vo p

* SECOND ORDER CONTRIBUTION jz VANISHES BY SYMMETRY

VALUES (IN UNIT OF 10" 3 6 asu) AT 1.787"'!*

"2 |T)4EORY) - y. (EXPERIMENT)

BUTADIENE (1064) 3.6 3.45 t 0.2

HEXATRIENC (HOG) 13.9 11.3 ± 1.05

(60%t -40%1) (12.9)

S CALCULATED rg AGREES WITH EXPERIMENT BOTH FOR

THE MAGNITUDE AND SIGN

1

Page 52: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

c-8

z 0*P E

in0 ZIWO L

Ii -

aI >

00

CL m

u- >

w z 0

S L. . - z

-(nLaw

L' IJUaI

'-I-

L&J W (D

2 w w

Page 53: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

U C4

-~ IL

d -d

J -

ww3 1$.

Page 54: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

-0

-0~

inJ

090

onat-l o wm !s)xx

oo 01 011o 0o -

wwL cc z

z U

z rA wi

z coE

- 103L 22 v

W 4W Q*

0 4 4 4u w 0

z w 2

w U.C

000

Page 55: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

-0

in

z

U.,

0

zz0a

zco4 0

00 a

W 0 a

wI >~-j Z

w ~40 C

o z -2wu

0i~ 0 ~Z 0 (00 40 0m

uiO

Page 56: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

C-12

PS

to u

-i-

* . .-

UU

0 C0

0: 0

3

Page 57: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

C-13-0

MNA

z z

og0 -

zz0 cc z

z 0 . z

0 oxC

1w, 45 49

u4Z

Q). UU

0 w

W LL

Page 58: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

C-14

-II

2z

-CI c

z

20

cr02-4.

_ _ __x

ujm

cc4 (

Page 59: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

-0

t-in W'

o0 Q Q0 -0

w8

U zz

z wCzz UwOg0 a

0 0I z

a ~~3wwZ

oC 2M

Wc 4n

W U

a.LUjLL

Page 60: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

C-16

-0

00

0

zz CA-

z 0.- z 0

c W La

3 0 0 ( W)

j 0

:j -I

0. 0

w w- o- X

Page 61: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

C-17ELECTRON CORRELATED STATES: ORIGIN OF SECCND ORDER NONINEAR

OPTICAL SUSCEPTIBILITY OF CONJUGATED CYCLIC CHAINS

NMDVDA

z I • CH3

X (Mjm)

3.100 1.550 1.033 0.775500 1 1 I 1

400 NMDVDA

/ / / \ xp

V300 0.9f

7; 200 - o.oo ' "-- ,ZOO 290 320 360 440 00

WAVIELINGTH (am)

100/

0.4 0.8 1.2 1.6

E (eV)

E1

Page 62: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

C-IB

DCNQI

06 OCNOX

SYMMETRY C", (IV) (0) 12L*

3.92 3l1 -6.80i,3.78 00 -31

zI,2A, - 2.31 9.0 -41

* ENERGY EOU.

400

00

42000

-400

Q20406 03 10 1.2 14 t4 ff yo

ENERGY Cmvl

OCN01 I z Exnmental SoCI SdlAn i(D"b)e i 17.5 ±0.8 17 j 18.4

0. iov .ea) -27 t3 -19.7 -73.2

Ao N 0(1O am) -474 t52 -335 1 1347 1compmOin of ao£mprnw uhm SOCI.SCI Value of 0lpol MmmW

and the Soaord Order Mbueespis Suamepbly at 0.65eoV.

The percentage Comtbsalule of Diagonal Termi and OWf-deani Term

Page 63: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

C-19

MPC

4

gNERtGy A3SYVMMETRY C, (tV) () (0

iS'3.69 4.7 -8.3 2.A" 3.69 0 -20.0

4W 3.54 0.4 -13.6 43AW 2.42 0,1 -14A1

eIt .92 12.0 -4.40

I A' -00~c 600 a0o

WAVELENGTH (nm)

600 ,p

300

-00j

0020040112 14 16 ,

ENERGOY levI

M Ei erimeunai SOC) SCl;& ~&(ww" 17.4 ±2.5 21.4 I 25.1

ov (104 owli .123 t 22 -104.7 *238.4iLv 1 (IQ-" * .2140 :t 390 -2240 -5933

Cc Perim of 'Emp d Wi d ii. s SCCIValuss of 0Olpolo omand the Somd Order M.6easpiso Susamptt a 0.65 *V.

ISOCI I SC!55.5% 1 86.4%44.5% i 13.6%

Trh@ PsOPOWtq Cawbagimi of Otapai Term mid Off-dpnd Toem

Page 64: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

C-20

DPHQ

4,

ENERGY 14~ &ALI 31-

(OV) (0) (0)

- 22

03A. 3.41 4.2 -86 .

is, 3 18 a -9.4 Z

ZA 154 14.4 -. ?0I-

WAVELENGTH (mm)

1 000 I

S-1000

-2000

00 02 04 06 a@ tO 12 14

ENERGY CiV)

OP40 SOCI' SCIp,(DO 25.4 30.5

$ .(10-" go) I-1410 I -626p.,6(10- em) -35800 '-19100

Compwisan of Expermu ertMw SOCI.SCI Valum of Olpoe MwOmamd "~ second Orde Miaosopio Suompstill of 0.65 ev.

I I SOCI I SC) I72% 85%28% 15%

The perc@m&C,~ Contuttn of Dtagoa Term and Oft-aagoi Tem

Page 65: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

F-

C-21

ELECTRON DENSITY CORRELATION DIAGRAMS

( <An ef r (pn-pg)dr

r .OCNOI(SO-CI) Pf-Pg

,o/

IL- -- 4.1

MPC (SD-CI) Pi-Pg

DPHO (SD-CI) lg

-- 77D

-S

ii C

Page 66: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

PICLED PCLYMIER GLASSES C-22

TIR SLM DEVICES

9%z %rap- o View

* (I-±iic trodesfl~fl I Iar' Si Chip

Orietatinal rderMNA SINGLE CRYSTAL

(2 . t) 1 4 8

CLAS SYSEM ±3,.di,(10Ogesu) r,,(1 0' 2mi1V)

CLAS SYSEM (l0.3OCms~esu1) (-1,9074±m) (X.633Lum)

M IG VNA 66 1 0. 0.3

RESCINANTFIGAOY 5300' 6 2.5

__________mNA SINGLE CRYSTAL - 1 230 67

LINEAR CHAIN NMDVDA _-- 2002. .MPC - 2100 24 - '0

CYCLIC CHAIN OCNOI 470 5.3 2.2OPHO 36000 410 170

*Measured at X-1 .58ITI AEREEN~1. Third harmonic generation study of orientational oroer innematic liquid crystals, Phys. Rev. AJA.. 5051 (1986).

2. Microscopic origin of second order nonlinear ootical properliesof organic structures, in Noninear Otr--l and Seiectrnattiva

eclIrnaLa (Plenum. New York. 1988).

3. Recent developments in microscopic descriptions of thenonlinear optical properties of organic and polymer structures, InProceedings SPIE = (1988).

4. Nonlinear optical properties of linear chains and electron,

correlation effects, Phys. Rev. B - Rar,- Communications (in pressl.

S. Symmetry controlled electron .crrelation mechanism for thirdorder nonlinear optical properties of conjugated knear chains, inFlotiroeenansivo Polymers Special Issue. Mol. Cryst. Liq. Cryst.(1988).

S. Nonlinear optical properties of polyenes: E!ectron correlationand chain conformation, in Nonlinear Onticai Pinartes of Polymers(Mate.4,als Research Society, Boston, 1988) I. p. 91.

Page 67: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

D-1

S. Etemad

Bell Communications

CONJUGATED POLYMERSAND

NONLINEAR OPTICS

Page 68: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

D-2

C c a-d le !C ,c *f~~~ ~ H C ~ C~

H m

H H H

t.7-

H H H H

r , rb r M rrc c Iw H

to T~3- i iJ

3 3 3 3 3 5 5

77777 W-N

Page 69: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

D-3

Y"AANi06~Y

PEA *SARAA 1@4 n o)

l~QlY ~f6;Al 5A9

-A* 6 4A

Page 70: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

D-4

(C)4)

LF F~ c7

I A14

40w

MLnsfC . e1 \. &v eA)PV _7 Of,

Ge __ . a .1w

Odo3 1"

Page 71: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

D-5

c .t o+ , .' ¢oTH H H H

Il ,:3A ZI I I I

- -- I; 1. I; C

H H H H H

(bI 3w

4,,INOU

(C)

TWO~ 4444A*40tc A4.#piA)

FILA A -, 6 (Cc M

x (3 . (E, 4- w) (E, 2'p'. ,w (E1 ,

(E+ . 3 (E,- Z(E ., +

.. .... .............. .g 0 A , ,,, ,,, ....

Page 72: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

D-6

\41 I ti

F H I -i

- X(J as

00 10 20 0~(DEGE)

IIRA ~ 7-3.0

SE- Irons~(~.

o -3

'o, hy ee'

Page 73: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

D-7

J A11E SE '7UAL /,Q PAA7P... AA

loo/, 1 ~4JtIIIA AJ e lA s

1 .2

-00

- ~ s03

V. 06

Page 74: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

D-8

e c t c C c. MA& 0614o,

M"A*Aws as 9a40a ze A4a.ew

wcA c.5c A -c c

N.O $P,,,.

20

10

00D 0,1

yI

PI' .-

Page 75: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

- -- D-9

.'c. -v44 4-" Sc

200

'r-.. MA S -4 1.3

0990*Fgw ________ALA

2 - P&t&

64HAMS ijeAOSC6

((eV

Page 76: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

AMPL E:

PICOSECZN fi

topT DE LSE

L1 DELAY

5 -51 ALM

f 9SOXCAft

0

15

20

5 *0

0 2

-1.02 0 102 2,03 3.04 10 2050 .A

P~PPRS DELAY (Ps) 0101

1. AFF7 0.75w- -

o 0.0 'a 0.5 1. 1.0l

DELAY (Psec,).5 1

Page 77: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

0- eAk

--- -L - a 4s-

-" -6c 3C iOC 3CC

popPoo fw 0- .

5o-

- 01 2 3 102050PUMP.0ROSE:DELAY fPsec.)

tab%4 A&i44*4en?

(06% .Ace OtLh.4

Page 78: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

D-12

*tOON4CAA . X ~~

OMM

af ? as 0* U LS 4.8 IL 1

fodw

I Or

I/ (

AIf - ,W4 PAWAnoft~ 'L"4~

I ~ %'A~rCAds

Page 79: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

E-1

A. J. Heeger

University of California at Santa Barbara

ANISOTROPY OF THE THIRD ORDERNONLINEAR OPTICAL SUSCEPTIBILITY

IN CONJUGATED POLYMERS

Page 80: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

E-2I,

-s. ..-r' 9

55

-,. ,.".,. ' -.

S

10

... .

2

gI

Page 81: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

E-3

-44-

I. ,'- /.Y ,

IId

*1 -4

at

*~~4 c' uU

~t/, 4 x

Page 82: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

I|E-4

-

I"I!i -

-I-|

t- 0 J I --

,V%/

S -

Page 83: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

E-5

0~ ~ 0, -

0

-4.-

CC

~LO 0

(Aa ABO3NIUidojqfV'

Page 84: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

E-6,.. c,, -'f'fI - -' - , .2 L j ' Pt~t - Y */~.I**..*

I-..' a -r Theory -. :,

$'*wo-'

V4t

""-"'"r----Y -1 - t I". . . , -- - ,. P , ... .

0.8 1.0 1.2 1,4 1. .

Photon Energy (eV)

TlIO A c

V j

..!,,,,,eW 4 .h.<,,. Vp;. .r .,,

! I"

I

III!

Page 85: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

E-7

for..t ft-.y -- t- (

Dy~~~~~~~~.(.I ~~ ~ ~ ~ C IrC)?.g (.~S~,.3.)d. kj4._______

1=4. (Cfja~vh Ofd£ ~

C cc c, 41- C=C _ Ok

Tan -M (C H)

, ~i/300 K

J.V a)

I-v

-4 -3 -2 -t 0 I 2 3 4

(psi

Page 86: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

W, ~4h O4SOLD

ho

0-

C- I

I ~ 4~W ML

Page 87: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

E-9

01

- :n, O9 m a=0 nt" Of 1.0

0.

~~~'.I.~~~~~ (Lattic Constants) OIC on " at -

.',S r, le ra * ifflt, :;.0 '

o /

U.0

o.* a.0 10t

s (Lattice Constants)

. . .. .,,a ."..

.Wae',.at.\

a t\e,,

,, ,, \ ,,

slatatemartat~a gota~I 0-ag -E~Ja..'~ C- -

-- 0 0a.N4.,%(L) amot \\

. .......... .. ... .t. W It 'tt mi ~ath I..i - - - - - - - - - - - - - - - - - -

Page 88: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

IE-1O

3 ,\ f ~trans-C x ."

L YI

.1*, I t 1

hv (ev)

H '\I / \ /

cC c/ , / \ /

/ /

14N H H

\ C C /*. C/c %'

TRANSHFANHS

cis

13 ft-

Page 89: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

E-11

.-

- -" ,--, - 4

I -- ' '. . . .. S - 5- .

,* . -- --.'----- 5-

i,* . 5

Page 90: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

F-1

K. D. Singer

AT&T

NONLINEAR OPTICS INORDERED MOLECULAR SYSTEMS

1IIiI!

Page 91: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

F-2

NONLINEAR OPTICS INORDERED MOLECULAR SYSTEMS

K.D. SINGER and M.G. KUZYKAT&T .2ogineering Research Center, Princeton, NJ

OUTLINE

R.B. COMIZZOLI

D.L. FISH @ NONLINEAR OPTICS IN MOLECULAR ENSEMBLES

W.R. HOLLAND 0 FILMS POLED UNDER UNIAXIAL STRESS

H.E. K(ATZ * NEW POLYMERS

- MATERIALSL.A. KING - CORONA POLING

- NONLINEAR OPTICAL PROPERTIESM.L. SCHILLING - MOLECULAR ORIENTATION DISTRIBUTION

.J.E. SOHN

MOLECULAR MATERIALS

*MACROSCOPIC POLARIZATION

pt)- x,0 l x8(:E,:+ .,2(t)E,(i)Ek(t)+ x ('~),t)ttt+

e MIC-9OSCOPIC POLARIZATION

*VAN DER WAALS MATERIALS

pt)- -~lt>

Page 92: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

F-3

MATERIAL CLASSES

tifmwmaff Stwu L

~40autc Onefltatoehi Orce ww

MOLECULAR ORDER

o MOLECULES FIXED IN LATTICE

= N4 Z '~a~i(,)aJ(,)aiK(,) ... G L... (S)

*THERMODYNAMIC ENSEMBLE

EULER ANGLES x '.. V<AU >

2w w 2w

< ;JKL.. - > i =l f d cfsined 0f d'k;gL. ajjagjakg.r G(48b0 a

z

zw

y

Page 93: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

F-4

SYMMETRY CLASSES DISTRIBUTION FUNCTIONG (0) - P(COW)

LEGENDRE POLYNOMIALS

'm up flO or pina poop '-

u u

448

ca mUownu for pow? grou-p.uIAs

42 42

(& xj~j1)'A 4J 18 U A5 'A 4L5 4A U la

ELECTRic FIELD POLING

SUSCEPTIBILITIES

*SECOND ORDER

X&3 - .B4P -l /3X- X4 - A* s. !< -l~3 5Lm.an ,alu IFM Wn, r~t

THIRD ORDER/

XiN33- .v .- - !-p,

15 7 35 1 add d

_ _ _m

/%gu

Page 94: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

F-5

jPOLED MATERIALS POLING UNGER UNIAXIAL STRESS

/ * SECOND HARMONIC TENSOR PROPERTIES

*MOLECULAR DISTRIBUTION

exp-~(U~~m~E)1SECOND HARMONIC GENERATION

k- P 1(2) - 2d 31(-2w;w.aai)E (w)E 3 (w)

P?)(2w) -d 3 l(-2td;aWW) [I Iw - E2(~ dl 3 (-2w;w,w)Ej(w)

EXPERIMENTAL GEOMETRY SECOND HARMONIC INTENSITY

AM GLS*IMGAS A PPOLARIZED INCIDENT LIGHT

p(B)in(acoa 2 . - sil 29, )sin82. + 2acosS* SlnO, 00o0 2

I * S-POLARIZED INCIDENT LIGHT

p(8) -asin(9 2,)

zooc Zat

Page 95: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

ORDERING ENERGY ORDERING ENERGY

exp(--]G,,(al) - 'T 2.

kT

ELECTRIC FIELD POLING

XB35I ±<P2 -L -7 35

kT 15 5 213

*UNIAXIAL STRESS

Up U- Us bP 2(cos8) - m'Ep,(coso) ---- POLfLIG

STRESS POTENTIAL DISTRIBUTION FUNCTION

[ (L, ( b) a( )P(cosoI +. b3-)3(0

(mT 7T(-)Ps(Coa 2 m*E a,

KJ <p> = 3kT A.,

,cp,> 3 a,cpJ 5 a,

ffogitule f ar oowmw<P 3 > 1- 3ab-siiasorng~ogqgj<pl> I +2a

2 1 <Pl> .1)

Ii <p> - 1 <P 3 >_U~Pt i.@ 3<P2>. '0

Page 96: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

F-7

FILMS POLED UNDER STRESS

* DISPERSE RED I DYE DISSOLVED IN PMMA

Film Dye Numver Density Thickness Poling Field Stressv E4V.'c, f /cvw l ( ,?,dne/m2 ( Io 7 N

1 2.42 4,10 0.60 0.002 1 08 49 0.25 3.71

* RESULTS

Fil 0 .r- <,",> <p2> <p3> <P,> 1111

1 0.33 0.50 0.00 0.16 -0.020 0.00 0.015 0.0014

0 0.20 1.2 0.041 -0.20 -0.019 -002 -0.043

NEW MATERIALS

DISTRIBUTION FUNCTION

r 2 d x ,V 5 . E 7

* MOLECULES

*CORONA POLING

e POLYMERS

MOLECULES

OIL MEASURED BY EFISH

SISOTROPIC * DIRECT MEASUREMENT IN DIPOLAR c , ; LV ENT, DMSO

------- POLED

STRESS+~ POLED

@ INFINITE DILUTION TECHNIQUE

U

Page 97: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

F-8

RESULTS

maimauis 00.

Dm1o

Dcv 280f

icy 4110'0

o j& in 10- 3 cmsD,...X . 1.350g*m* 5so-

CORONA POLING

F ~ -SUSTATS

" NO LEC1140DE DEPOSITON

" NIGMER POLING FIELD

Page 98: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

F-9

RESTRICTED MOTION

- REDUCES POSSIBLE SUSCEPTIBILITY

- REDUCES DECAY MECHANISM

* CORONA POLING ALTERS MOLECULAR DISTRIBUTION

DISTRIBUTION FUNCTION

............. ISOTROPIC------- aY *CT'fODE P'OLM

CORONA POLED

SUMMARY

NONLINEAR OPTICS CAN REVEAL MOLECULAR

DISTRIBUTION

- INTERNAL AND EXTERNAL FORCES

* CORONA POLING

* NEW MATERIALS

I

Page 99: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

F-10POLYMERS

SIDE-CHAIN POLYMERS

CH 3 ,H 3

1 r*

* HIGHER NUMBER DENSITY -

CooCH 3 CcOCH 2CH 2 -N*CH 2CH3

RESTRICTED MOTION

- EFFECT ON POLING- EFFECT ON RELAXATION LIFETIME

NN

ELECTRO-OPTIC MEASUREMENT

I 'I

--- ,.-.;;--o

Page 100: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

F-11

ELECTRO.OPTIC MEASUREMENT

i4.

LA O W0 a

U! ,

w" ft (moo

RESULTS

MA1AIAL y d A,

O c Y V d m d A 2 9a d , -I_

I 13 I 3 I

(Owen)) d,. -I 1G"., IlaMA 1.52 dol.1

iMA

Page 101: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

G-1

H. Nakanishi

Research Institutefor Polymers and Textiles, Japan

SEVERAL SERIES OF NOVELPOLYDIACETYLENES FOR NONLINEAR OPTICS

Page 102: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

!G-21

Several Series of Novel Polydiacetylenes

for Nonliner Optics

by ..

achWiro MAKANIScI jR,

(Res.lnst.for Polymers & Textiles) A, eCI C

1. Significance of Crystal Engineering for F O

Aromatic Substituted Polydjacetylenes (APDA) R-C _

Z. APOAs by a tydrocen-bonding Effect d'C

3. APDAs by a Bending Effect (1) D R

4. APDAs by a Bending Effect(II) DA po(y-)A .C

S. APDAs by an Anchor-Void Effect S Y&A 0MIN4501al A. C I

B. APDAs by a Fluorine-Subsitution Effect

7. APDAs by Complex Effects -- X; Lit"

6. Preliminary Evaluation of X"' of APDAs o'(1. <4 <I.

FYIC.- 0. (ZhINrIo 10im * M9. Conclusion <3 <

V_."t :i: I M ( it

Coworkers II. Matsuda C. TAIteret atji. (J74)

S. Okada

N. Kato

S. Takaraci

M. Oht3uka

)Bandvidths(BV), Bandgaps(Eg), and Ionization Poten-

R R R tials(IP) for Acetylenic(A) and Butatrienic(B) Poly-

R diacetylenes By YEN Calculation.

R R R

D Substituents B Er IP

- in A 3.972 2.596 5.338

A (A) CR. in A I.AI8 1.769 4.903

CHi in A 3.265 2.449 5.039

R R R H in B 4.816 0.154 4.277

D "Z A CsHs in 3 1.878 0.215 4.133

R R R CH3 in B 4.136 0.435 4.032

Fig. 1 Interesting polydiacetylene

structures for NLO. (R:Ar) B.J.Orchard & S.K.Tripathy.Macrool..19,1884(1986).II

Page 103: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

G-3

* z N z Z

~iie* ~ 1.

.F I I

Page 104: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

G-4

00

- 0.M z 4

- - -- - - - - - t

._ -- -0" "-

-40C at a, I I I I . I Ia % 0 m tm n M13

4< C_ t " = ~: + .. - -

-. i -a 0 - 0,, o fo o• o ,

9, , 'C € , =

oo

9-., 9,,, '6

9, - * +

o . --,loin -.-."

oo

00

CC

'C3

~te,

CL c

- ~ + + + + I rt D

D (A r 9' 9'

0n2 9, rt

-.- 0

%-n -0oo -j -202~

0 * t- 0, o *- .. .J a I'i )

0* C 2

m~ -

w -, 00n C n w c

cr. 9~

- 0

C -4

'I*56 0

Page 105: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

G-5

~o &'oo ~ Y'i .ow..

* S z . + +.

. .M a 0 IMPI" n Is 0

- --- 2r_+r +

n U - 7_ I 9 I

n Z

.< , -, ,0

- * 0 0

-4 C.,

++

'c CD oraie to curn (a >~.

++ +V -4V

* '1' _/ '

0 oO

Ln +

0 +V ,0-

o a

I .- +

Nomlsze horatcre n ( . .)

,~ *~ ~ ~ V.0-00 ~ . L~- ,. i- .0

OS

0" 0 C0

0 -4 v 4~ 0M. 0 ON 0C rr 0IN 0

rr 0l~0On - 0

001S. 0

U- 0

10 0U 0-. l~ M *0a

0 ~H S U-

0 0

ibebaa o3o

Page 106: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

G-6

Z; ~ ~ a t

- C

1 . I I-

C 0 0

II 1+ E

S . m

00 000 04-

CA 0.

's -*A--Of l. s -

- a. "a•- i a _

rn o

-- - - C

O 0 O

000x000

I -* 000x00 '<- © I

.a a 0

4- z r=I' 0 0 0 ~ a0(

Page 107: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

~~' Absorbance (a.u.,) I

0

0

:1 cii

'0 Zgo0

:27 0 )

CD a

0 -

3

003

Ct

Page 108: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

G-8

I-. ABSORBANCE

I --

00

0 0

CI

NJ zJ

f- rr 4r* 0 C)

00N Jj

N

o 0 0

0 0

Page 109: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

G-9

~~ m--- ~ ABSORBANCE

I-- > C>.*

C, 1 w Lii-

n 0t

C:0

+J co

0.- 01 N

II

010

n 0' 00

ril -4- 0

.1- 0- rr t m

1"-. 10:0 1 0

0 01

ft - -:r :3r r" 1-

0 o(1

ro D r

Page 110: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

G-1

.9 ABSORBANCE

0 cr 0

0 0. r r_ 10

Pq M m M 0 4*n

0 0 <trt rt 0 I- IMa4H 0 0 0.* Ir I-':' m*

00 rn t rt rt 0

O~~~c: L - ~ - ~ 0

0.f4

o '

co 04 c 4

-I-I ~CAM MM X

cc . 0 0 . -

Page 111: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

H-1

F. KajzarCEN Saclay, France

RESONANCE EFFECTSIN CUBIC HYPERPOLARISABILITIES

OF CONJUGATED POLYMERS

Page 112: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

H-2

2'SC C :-.A:: -* !E' ~I..-2 32 - .nq ..r Oat

I..AA. . . .*.n.. ... n*.*... Ii A. .n.... .:.An.aI.*...I A3*4U-l l aCU....a .c 4. AMnltl u r41•DL ¢ml &a

L]t*S* " cetn~... n.

1. - 9 1, 1.4sy w e. 7 .. ... f&ile (0.00) A. .0 A fe i me f **f l.

T IN fILP PS~.II1?tO% n , LaUC3 ,/. . a . .?"1" 060911 OPTICAL ,T(UOPOLAUIS&ILIiT 0CK MM0INTI0. 2 ETIS.

-'nIO UCS i

E£lctri Fild t-ace Sao "Og M m c• GalaOtla-w

-f qOLVEAR SPCCTROSCOPI 1% PbA '-I- fILMS

&ftill-- .l a& nl .... .101 1. ....Telll-Q

a, a -r -i' 1l,31L.

.... I ...0 r .- , e . .i.

P t- t nteA, file ai, U.,t~e .. .....

f +0 l t ae [r ac ec rflte c s..

if . ... -. - ,)Q ..... ..

.- "... - ._

a - , 0, ,* ,oo ,*,,

., t/-- /

ijjl leftlmIl~aeatI2-Irn +llvie liue

3 - C..l V eee ili

Pllml~tilnl m i i~iI m . .1-.a Clel..

"- eee,'... ,,: . sest'. 7 .... . i.

It... ei 24T 4 ae..71

Page 113: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

H-3

- C .. e - ... w . U i.. .......1EA.. -

- r...,.. No.. . .... 1 ..

T- AN it.. a. s* Pr. F.n, tnt .. f& .r oI... 1 t.. . q t ...

SOLUTION CASTING

WAVaJ1407 1901

-~~f Lo'; 1ft .. tt ... .,-t- ovel- of

tflft q-- - 1,"tt .. tt - or. t-F. Too* *

Page 114: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

H-4

E,- .. ... I .... QC

IL4 03 ..6 0.7

.1a .- 844 . -.

.... .... t ...... ~a a .

frA. . ILI. ar f *.OC t."

F.. *LM. ~a2f 11n. t. ,At. ttA ft. 0

cx .t . UArqre of 0.7 te amfi.- 9

~*LWm~ ow maA~~flt@ow $AMU*00 ,.0 I 0 h.

230. AO 'St

Page 115: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

H-5

POLYMER OPTICAL CENSJTY

I 0 -Q -l 2 -E

~ ~~~A ~POLYMERTHCNS ;m

X ~2~..W'e ..ae aeter Iination -LM

A am

'U,.: . U

U,..

uhm ~ ~ oh me 4 ffn0 WFWa

J. AWL 00S. '/6 S. IU Nw o I~3 "S

Page 116: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

H-6 UCiENA

.... .... 'c ........

........ DcL.. .S-

- A

0Z 0.4 0. .

0. 0. 0.... 0.

~UNOAMENTAL WAVELENGTH (14mI l-

0.9 1, i.5 to8

jo.15 , .0.7

3 LU L2 U 1* III 3WAVE.D4GTI (WW

x0.3 0.4 0.5 . 08HARMONI WAVELENM~ 0.6-

IS 'LW. 1- 0.4--

.8 1.0 1.2 1.4 1.6 '.S Z..Wav.IontPLtr (Jmi

Page 117: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

H-7"--'-

- 3

-M " .Poly - -3MqC blue form

1-4 A01

i U-t

2tj

1..

,- -. 1.2 1 .3 1.4 .

,Vavelenvqtm ?M)

I.. - Iu *rt 1~ I'.a .....L..L . Tensor elements contributinq :o 3j3oL x T(rom'm -)(,) E--,G

.... .sin , ce crt. te -3.... 'C '' - - - - .- - - ..

r ... ...

* , I-. - - - - - * .2 o . 5.

! 7 -"

'_ _ _ ..... A " .. . ""$, ",

*UlI _ _ _ _ _ _ _ Lm

awme. . . .rmamww tw hot~on rfe0n 4ance w ih

ooP03i te i o funcamoental )

symt1" level

.... one Pnoton resonance

* . -- ---. Io

Page 118: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

H-8rensor tieements conrr nutiq :a ;DIJ -err ;..sceoti:)illt. 3

". -r e0-6

- ~ i 0 - - - -

'0-:r

r r r

N.F ___ ___ __ Re.'od .~ 95

-w phto-*-oan

'one photon resona'Inenit dependetindeofreractio

d'~ ' ________________

At ~ ~ ~ - -htnrsnac ooa

.rU.R.%

r..~00.T .)-s',s,

Page 119: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

H-9

c -nn. e e C

a *rL~ LASc *inanc'...

en. **..m rens,

Lu -' lonneo Ce.,,..

. . . . . . . . . . . .... AE0 02*C t s o

0' 220

4,0

*: .,-,. j..0 ..

.. .",*stO . ?* 4 *. _a~ *,R..o le/t.

... 0. 7 - "-C-

plm m * Tm O6sJ

------ -- -----

¢lw l F M ' lt, en l I.t C l .- ~. C-.

Page 120: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

H-10

-Ct,,. .. c. ..........

C ~ ~ ~ :' thi -O t.-.,- -IWt

Alsan U.S. 'S

,,-aa. Stf .... .aaf.

.a.c. -O.C ft .I

-* " - aett O'Gott.a .....

.[O'ER

Page 121: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

I-I

Y. R. Shen

University of California at Berkeley

NONLINEAR OPTICAL MEASUREMENTSON LIQUID CRYSTALS

ANDQUASI-LIQUID CRYSTALS

Page 122: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

1-2

n~t cAL- 7W pon

Page 123: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

1-3

I~ L. L Ikk <6

7170- 72 n L

-L '.-02A~ ~ 2,I,, 4

V'a

Page 124: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

1-4

.N0

0a.-J

0lyCs* ~

'I

5r 0

L.

V 0 0

0IC?-J -7-

dm-J (p 04

ii

Page 125: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

SmaL2 rder~ --gli autp. jo mDWXuw - VI.

a a ~~~~~ (2m - i n 9 w 8 0 -

(106u)

gas : j

13 4a2

TV 79*

VI40 M 7S2

4AI4tzmbet _4,&U-L d-- CA

Page 126: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

1-6

L.F. C.;

• . , . .. 4

1.20-C me.. % CHI mw..- c.,

- ..: * --.f- .

0.80

• . X.YA

.2 " -:" ' " *.' '

0.00

200 40: .- -600. Boo- -.Wavelen6gth 80Wavelength. nm

Page 127: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

17(a) (bI

SHO (532 nm) THO (35f..6nm)

S-0 " . - omuky. Chi. nfbtw. 3SLabof.,

C Optical Properties..

.6w101

CU V

x0

Page 128: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

Z Ir0000 U

N.NZ

%00

COC

E -77770 2. 'S L.

P% Ln

-uoidioqV nv'4!pq4dasnSjt~llu N<

Page 129: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

1-9

Isi A

j

V V 0.

x0Iz

Page 130: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

1.10T -I

SWIM W

______ 0>

sapmq' (g L

v v- 4-i~

-. 4 A A ~; 7- ~ >

Page 131: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

J-1

D. J. Gerbi

3M Co.

NONLINEAR OPTICAL EFFECTSIN

CONJUGATED SYSTEMS

Page 132: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

J-2

SECOND ORDER NONUiNEAR OPTiCAL EFFECTSIN CON.JUGTED SYSTEMiS a T. BOYD

DIANA GERBI 0. A. ENDER

R. M. HENRY

K. K. KAM

P. C. W. LEUNG

AMdANCED OPICAL. MATRALSSCIECE RSEACH LBORAORYJ. J, STOPKO

3M CORPORATE RESARCH LABORATRIE

ADVANCED OPTICAL MATERIALS PROGRAMOCRGANlC E3ASE:D OEICES)

/e!OCDEL=XG

SYNTIS CARSTW4, :ZA.T:ON

!3VELOPMEDI AND APPL:CATIONSI

" OENTIFY CANDIDATE MATEIALS X(2 ) __(3)

* UNDERSTAND AND MAINTAINOTCA MtNIAINV40LECULAR CODE

* DETERMINE APPIUCATIONS OF MATERIALS. IIIIII OPTICS LAS..W"11 01AFEASIILTY IN OEVICES TULcom omwn ToceNoLoamg

rum OPT=* LASOPIASESRRTCIN

A-

Page 133: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

J-3

OUTLINE

L REVIEW OF SECOND ORDER NONLINEAR OPTICS, CHARACTERIZATIONMETHODS AND DEVICE CONFKGURATIONS

It ADVANTAGES OF ORGANIC NONLINEAR OPTICAL MATERIALS

I MATERIALS PROCESSINGIAPP.CATIONS

IV. ELECTRO-OPTIC MATERIALS - CRYSTALS ANDPOLED POLY tEfR SYSTEMS

MACROSCOPIC POLARIZATON: REvIEw oF SECOM ORDER uAIMME OPTICAL EFFECTS

~ ~ E+ L E.2I+I13! ELECTRO.OpflC EFFECT:2 r= uP,-~r Em

hnftx of refractUon changes with applied voltage

n = n. +A&n(Ea n x (

2 1

SUM rEQUENy GENERA1nll

Output frequency = sum *I Input frequencies

wfOut) = w, + W,Sl4OR 142%vld,([X121]2[1111-1] 2MICROSCOPIC POLARIZATION:

DIFFERENCE FREQUENCY GENEDATIONS

Output reqpmmcy = dilference O Input frequencies

p =p *~E A E Eh4 (jtEtEkEA IoGut) s~.

c2 ARAC TA1,O hE'N0OS

R

SECOND OC NOLINM OPTICA. MAT84ALS

SltI5 cKMWL. Ste

*zET~-om Ww

Page 134: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

J-4

] S FI. E 00 2

1(2w)sample1(2w)urea

ATEIAL FOFM FIROCRY E OWDER MATERIAL FOFM SOLUTION (LOW POLARITY SOLVENTS)AAFANTAGES OBTAIN MOLECL.AR PROPETES.DISADVANTA GS CANNOT RESOLVE MIRO ANDCO P RS N

MACROS IC CONTRlIPONSARTO NCONLEARITY DISADVANTAGES. MOLECULAR PROPERTES ARE

SUBJECT TO ENRCNMIa4T

F - E \ P

MAKLER FRNGE FR H

20w. 2. Exp -mm~mW f. Ums "- SEC mmw ,mm - ,,-Lm~ wwF..wm pwy a1n P. P~q .0 V, hom L. S200F, Gk-p CT. w M me dm D.

20 0 20 40

I ANGLE

MATERIAL FOt LARGE SrIGLE CRYSTAL (rnMn to cn)

I ADVANTA M.aj TENSOR 5----2P MATERIAL FORM: POLYWER SYSTEMDISADVANTAGES, IES CRYSTAL ORINTAON. AADV4ANTACES: REAL LF ElNFO9NMENT.

S OF REFRACTION POUSG EASY SIGNAL DISCAMIATION

DISADVANTAGE NOT A DIRECT mEASL.O4T FOR E-O

I

Page 135: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

J-5

CmOP EFCrI

A- ADVANTAGES OF ORGANIC MATERIALS

[ SYNTHETIC TALORASLrTY VIADEOA TIONWSBSTIrhETS

77 ---- k SI.SP!COSECONC RESPONSE TWES

TRANSPARENCY

rip". I, MECHANICAL AND STRUCTURAL STABIJTYA. m hii... n s C.

HIGH RADIATION DAMAGE THRESHOLD

ENVRONMETAL STABILITY

SPROCESSABIJTYMATERAL FORM PO.YER SYSTEMS, CRYSTALS PCOc T OPEATflc OF DEViCS

ADVANTAS DIRECT NFEAS (DEVKCE FO

OSADVANTAGES. LESS SENTlVE THAN SHG

NOT AN N-SITU TEST

CRYSTALOAPHIC ORIENTATIONFOR CRYSTALS MATERIALS PROCESSING

2110964nWE POL.YWOMS

e-g. CHANNEL WAVEG'XES,

SREOL ESLOW LOSS (<1 sB/cm)* R r i F WELL.KNOWN

TECHN)O.ES AVAILABLE

I DUCE OD RATHER THAN RELY

ON CRYSTAL PACNG

e.. BULK CRYSTALSCHANNEL WAVEGUIESVAPOR DEPOSM FILMS

* REO.IRES LOW LOSS (<1 clB/crf)

SBULK CRYSTALS MUST BE DURABLE ENOU"4FOR CUTTING AN POLISHING

SCO PLETE CRYSTALLOGRAPHIC ORIENTATIO,IS REMUIED

-PRNCPL OPTIC INDC AND AXES RELATIVETO EXTERNAL MORPHOLOGY 4&ST BE0ETERM

Page 136: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

J-6

SECOND HARMONIC GENERAT'ON APPUCATIONS

rd w bue 2W

laser die", S waegfuide

doublig optical frequency gives 4x storage density

APPLICATIONS - ELECTRO-OPTIC EFFECT

"wduW4t directional couple

G/*. ..

• -I --"-_,.

1

Page 137: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

J-7

ELECTRO-OP7T:C PHASE SH:'FTER

,'OOULm'TOR, GYRO

*COMPAPE -'Xu. ELECTRO-OP71C PHASE SHIFTER

\fle d

cN/s E =4 Wflw

Page 138: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

J-8

RELATIVEHALOfNITROANLW'1ES EFFICIENCY u DEDVE

(URFA)i

02 N~,20 4.471

~2

-'ar

Ca _ -

2 7.722

0.02 3.23

acl

MAUEIL s~cg ab W2

S-chIers.- I Int1a P11421 30.844 I3.952 3 6.004 3 90e goo9 4

(phast 11

*., m~tuteall. 7 .344 7.844 1.091 97.96 116.69 SS.23 2

(9-chlers-2-altresalimeI.)

3-chlers-4-aftreaamillm P?1 /C 3.813 12.S31 14.467 96 91.20 to 4

*A. T. McPhil and G. A. $11s. J1. Chow. S. * 227 (196S)

Page 139: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

J-9

WIMECULA R NX)ELIING

H*O WUMO

14 IIO1-4 H

S,4 diffee e in grixinI' stlate a..i( excitedst e

difx i rmo"ent s

5-CHLORO- 2-NITROANLINE ca

a 30.844 A SPACE GROULP

b = 3852 Pna21c = 6,004

CA

B

Figure 4.. An illustrazon of tihe crystal structure off 5-hor2-nitroilne Signfian;ntr -and intermoleculaur hydrogme bonding indicsed by thins lisnm.

" II I I I I I mil

Page 140: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

J-10

5-CHLORO-2-NITROANILINE

SPACE GROUP Pna2,

polarization axis : C-axis

P X(333) /(zzz)COS 38

.1Z

-~ C

polarization axis of moleculeCi i polarization of crystal

C

Fiqure 5. A projection oi the nbbon-like packing structure of 5-chloro-2-troasline. Z C = cOS 0 =0.906Molecules in each row are connected by siagncant ine emolecuLa hydrogen bonding. P0

SHG PACKING EFFICIENCY 0.74

2-CHLORO-4-NITROANILINE

ELECTRODE CONFIGURATIONFOR MEASURING E-O EFFECT

FIGURE OF MERIT :1 nV'r.:-nr::l= 18 pm/v0C.

E = y

Page 141: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

J."'

SHG STUDIES OF POLED POLYMERS

EFISH on 3-CHLORO-4-NITROANILINEPRINIPLE OF POLING GUIEST/HOST SYSTEMS

E 0

1.0 lncroni ______ 0.532 FTUi 04

INVESTIGATE:

0 Extent ot oroerwig

* 1h-situ

* Po" goyriaryics

- CUALLA? AGREES IEMT fASMRD

Z. l2co I X 0l

E. RT! X S 1

z ~. 6 X1O V/cm O 30 e)R. X 10-10

-r - 1100 3 - 0 '65 hr). ft? 0.3 X 01

Page 142: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

J-12

POLED POLYMER SYSTEMS FOR ELECTRO-OPTIC EFFECT

448 IX d2%-.Ww)~ A/15a0.GUE at t" ndcrns BIGhm n1000 in 1300 nm I0nOh

3MX-40 37 84 51 30 27

3MX-3 19 1.5 0.13 0.09 0.1

3MX-36 18 0.6 0.3 0.3 0.3

3MX-2 15 0.5 0.6 0.6 0.6

3MX-1 11 0.07 0.06 0.05 0.07

3MX-8 10 0.03 0.04 0.04 0.04

Page 143: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

K-1

G. R. MeredithE. I. Dupont DeNemours and Co.

OPTICAL NONLINEARITY: MOLECULES,ASSEMBLIES AND WAVE PHENOMENA

Page 144: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

! L-1

I G. KhanarianHoechst-Celanese

CHARACTERIZATION OF POLYMERIC

NONLINEAR OPTICAL MATERIALS

Page 145: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

L-2

Thiarac~:r=On -t 'ioniirear:H

-oticai Zganic .lteris EATN

D .-4AAS

- .ESUE

-4 MAN-<hagianaui

.~STAMATOF;W

iqoecnat :~tneg Carooratioii3 !NG

Summit. Ndew arsov )7901-4 YCCN

ACS Norxsnroo

Virginia Seacri. May. .988

LJTh-INESchematic0 Moiecular Miller S Rume

Design of (intuition, computer modelingorganic molecules anid quantum mechanics)I

0 Doivmer Strumure ariaSynthesis

I (Optical, efectro-ooticaL.)Char actei ization (Solvato-chromism i

Materials i (Str'uctue/ propertty algorithm)o Measurement of D v Second Harmonic Formulation of (Guest-liosi single

Gener'ation Development polymeric systems TrcmonntLc

0 Masreen o o th PcktsEfemFabrication (Thin films, 3D articles)

Fabrication to (Dimensions & relation to0 Rauit fr NAPIMAcritical standards activity, shape, size..-)

anvceDesg Conversion t io device forinal0 MNAJPMMA/SoI-G9I Glasses - Role of Motlculi n

Motion Evaluation Evaluation of device

o Larigmuir Blodgett Films - Rote of InternalOptical Field

3 Aooiiucation to Oevices

Page 146: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

L-3-ANHAFIMONIC 3SC:LLTOp MODEL

BASIC PHYSICS

M mug ot ectan

MOLECULAR0 Ww"vg of eci.

N oasllator Sttrgt

P E Zu +, -- E, , F'- w.+ ~ E +E anhermofic cofisafit

L

MATERIALSanguear tiu"Cy

L gm of mof0AS

P " - "E + X'"E' - x E

ExO. ria"*Gul *Sl

N , 3.0

log.43. versus log.a.

Verification Of molecular Miller's Rule

•,. * 5-4t' /E/

7,,

+"

o-.-

/

,S04

i6

I

Page 147: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

L-4

- , .. : M¢IAULL I

.- , .. M l i ma Kerr Col i 1 It s K ( I 0 9 U) l n er PO 'lM IIag4 IIIV * , s 1 0 I J U

St ' Un *,1A nd I 0 esul

111.lcomin -9

(.11 -.0.0 @ ot P403 09 5 j2 0

It- _ O<al 6850 isn 5

- - -11,4~ -~~I0 145 295 20

TN,16.9 J96 1a

-Is -9000 -.. .tv

.9 bahINS ati 0611 Pat q Is been deudl3Cor"1 equadls"t J. And

* ~ ..oZn vtbt Sia.)I 111atur. .k*s for the dipole ma I 0, And the Averbqe pol'.1,latliY.

S at90rt.00?., vdflat eftetd Abe W5* A Ic 9p. A OlSiltrSIOn fGFRIMI, h" b~tl u%Cd

to9 gorom 0bii t 191 Pro It. A* Also. 1 1 91 pmw* •aI . St vf role *ll

O F POLED FLEXIBLE 0IPOLAR POLYMERS

Types of Molecular Packing

Packing Type Order Magnitude

\/ Non-centric Second Moderate is Theory swise as f-r .roh

Non-centric Second Strong

r"$ d Centric Third Strong

Centric Third Weak

-t=; -l +tt

+ xc Wg0 JSOI be dhO for OO f cr3lfS FlOryDirection of dipole moment

Page 148: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

L*5

H '

>0 CSH4X H

/ 1Ta 2: Aveaqg moflhI Sumomatbifts for

H ~Vancus mommawu WO.0t6 C0004vimmu.

FIG. :. otauua ai Walls of PeNS. X -NOi.

Wr. , MnmrUS.n (-l. a0.Momcuar iCad NUR,.W of %1, St /A Emmancemern

TABLE U. u)z(1 i) a(U/(- 10-" Se' M- c polyo-o*uvaemst6. vs NLO OcnoaIorwe 51tacicy p, r -Z9g K. x - 200 -.~ uOa. '7.000 37 &30 is

P, (0Z0 70.000 152 1140 20

1. 0 (timcace) 23. 5 10.7 9 Omeffened Dy GPC remom to o"yWww,0.2 16.6 8.27?

0.4 16.3 6. 12 0 Stfua tu01 ImY TODAb10.6 16. 6.360.8 11.4 8.17

0 (svadlomauai 1.. 8 .23

c. S. W-114m. S. F- Fern. M. Sozrvu. ainc 0. J. Wimary

COMOna. A6Sawe?' LADOrmon. EaSmman IKoaa

~ AY "S . a6: -Carmoany. Rocnewpr. p. y'.

Mulvaney

C. S. Marwi Laleruan..0oanvmor totCftarmany,

L~n"OrSITy of Anzons. uman AZ.

Maker Fringe of EFISH of Dioxane

Laserx 2]Geneatorat A-1.535um HV= 5.0kv

L F 13 VA**" I

SiearpleCO CAMAC Crate I

LC -c L1, I I c

Lc II'

Am

Page 149: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

L-6

Second Harmonic IntensityFrom a Poled MNA/PMMVA Alloy

E

M

U

75 . 5

0 F-N AMNCGNRT1O RMPLDPLMR

Roainai

-h0 eodnroi tnivmgvnb

1( .

S 7CONO iAcOI -(E-AT1ON RO ...S ."MYMaR

d Second harmonic coefficienit

Popeifo fl C1 of d tentor onto optcal elctric

1, Coherence length

n Refractive index

I hcw a ati Polarized incident

e Angie of .tSWo laser beam

x (-2 .0 2d

When 0 - 0 p - 0 and re ia no comoonent of d a*ang E, andtm. ol MOa Second harmonic Oflaetved

The M&Wa finge arms fronm an mfteternice beteenh theI unda~Wa beam am1 generated harmonic wav.

Page 150: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

L-7

-E,=v :a 'AEASUREXM4E% POP 0CXZLS AND K(ERR EF-EC- CKI- 'F

The ooticai retardationl s

The asretnnrganCe an induced in a Koff coll it: 2v I an

.%n - ),BE'

I Optica path lengthand n a Pocxi codl:

,n 12 r EAn Induced birafnnggflce,

Wavelength of light

-he wirefringence results in a retarationl rThe induced birefringefica

-- 20ant

4nl - I In: r, n: f,,) E

in the small angle appfaxiinatofi. Equation 4 becomnee:

(I . r1 r Pockets constant

n Refractive index

A SiMUs~dal voltage is aopleow actass the siscm)-atic cell E Appiod @Jelec ield

V . Va awt*For poled matenils

Suostituting Equation into Eauatpon 5

-- :wf Pociei Sinwt rKerr ca2v 3

This result is obtained iram a wernoidnarnic moeal for poling

Boltzmann statisnlcs

The aaaawant aingular deaendance of the Pockets effect aises; fromctmange 0f octicai Dath iengtri

wow a is C th thickness of the sandwPoeOley r

The analyzng light beam sees a differft bireiringence aJunction of an"/4

- -- Poiarized

&n (et - &n ie -90) sine* Laser Beam

eis the angle between the nrmala ofl a samofes and tihe lightae~m

Page 151: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

L-8

SCHEMATIC OF ELECTROOPTIC APPARATUSGUAN lEA

WAVEPOLARIZER PLAIE ANALYZER

IV SUPPLY U

SIGNAL IlEFEFIENCE SIGNALGE NE HA 7On

Pockels Effect from PoledMNA/PMMA Sample

(Angular dependtfICe)

InteiisityIaib. uruts)w

0.(r 10* 20* 30* 40* 50,Rotation angle

Pockels Linear Electro-optic EffectFrom a X("1 Polymer

IntensityIart). UJIIIS)

0.0 2.7Electrical held (V,,,/pamt

Page 152: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

IL-9

"OL-GEL rECINOLOGY

i

POLII1fllC - CBOSS-LINKZD POLYNIZS/

LONG-CHAINED IOLECULIS

COLLOIDAL - LIIKED COLLOIDAL

PARTICLES (SOL

KERR EFFECT OF SOL-GEL GLASS

MNA added to sol-gel glass

PMMA is added to sol gel glass to give mechanicalstrength

Slab was cut and polished for electro-optic measurement

Arrhenius Plot of Kerr Constantfor MNA Optical Composites

1.5

1 13 0 00E

0.5

0

Log -0.5 00f1(TI/(2981K

-1 5Zw/w MNA in PMMA-1.5

0 5%w/w MNA in glass/PMMA a.

-2

-2.5

-32.5 2.8 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5

103

1/temperature (K)

:, !

Page 153: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

L-1O

THERMODYNAMIC MODEL

NLO Side Chain PolymersFirst Generation

Assume that nonlinear ootical molecues are distnbuted CHI Bonentationally according to Boltzmann statistics. _CHZ - ab

C=O

, Nr. iA - 2) uE o

n- 2, 5kT (CH2)n Spacer03IoL

N numoer density NLO/mesogen

f internal field 0hyperpolanzability NO n-2,3,5,6,8,1 1,12

,U diDole moment

E poling field

k Boltzmann constant

7 temoerature

t dielectric constant

n refractive )noex Dependence of Glass and Clearing Temperatureson Carbon Spacer Length

RESULTS Ion-90 --

70- iiKSam ple _ ' -2...l _ (-t, ..0_ _ "(calc... -2 fo - -- N .: ,,, ;" " .

~5ON S'E410% 4o0--

MNAJPMMA 1.6 1.5 0.6 - - -

t0 - T-

I 2 3 4 5 6 7 8 9 10 11 12 13 14

Number of Spacer Carbons

All '" values are x10" esu and are at 1.06 /um

- .. measured at 1.06 vrm

x-,(-....0) measured at 0.63 urm and a dispersion relationwas used to obtain values at 1.06 urm

I(Calc) used the thermodynamic model

Page 154: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

L-11

NLO Polymer PropertiesL..;',,VU.JIr SLCDGE , FILMS

x 12) at 1.3 pm >50 pm/V

r (calculated) > 14 pm/V

n ( 13 pm 1 1.57

e (DC) 3.5 C .rna,,.i o -o.cwa by Suraam

e (n2) 2.6• .Y~SIW Of aCRtIIC T SIudh..s 0?

waveguide loss at 1.3 pm 0.9 dB/cmSpin coatable from common solvents A wscon o . auo .1n mo..c(,es

Poled for applicationStable (<to% loss? at >50"C fot 5 years

Langmuir-Blodgett Film (LBF) Formation

" Is tnle deposition on a surface of a single molecular layer at ahignly ordered state

" Sequential deposition leads to periodically structured films - '01, oot., ...eine ha *He=

" It is done by transter of a compressed molecular surface layeron a liquid onto a solid surface by dipping

Transferred layer on solid surface

Molecular surface layer

" Applications

- Nonlinear optics: Bistable switchesThin film SH and TH generation =3o-

- Electro-optics: Thin film light modulalor 1' /

- Integrated optics: Planar dielectric wave guides

4 XI 4i

.: , . ;i . :0

5, ACTNN. AREA JASB TIC M

g. 5. Plot. o( the 5emod-honC (SH) signs 7 v-0 wa

1 x i relative to the quartz teference slab versus the area iracu t

--Jied by the dye in the aIted otooisy.

.0. ,;u' tl - t* I. ItS. O.. . P 010

Page 155: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

L-12

-::a!. :=t:cal Electri~c -eld -:near Aear rx~:Z

* .eg.,ec: i'jct;at-on :n :::e

* - *z; F, A YF , 'yzzz) F . moment

* AssLme :Mat !:near oo:ar::3ol:ty

i alone zhanges 'ocal aynam::

2 3 1 2-or

S ana - are tne d-.ooe moments a

3n:o =olarz:aoil.t:es

p - surface density of ::=Oes

Z 3x:s :s normal to glass surface a -aoius of non2:near ot:c:::nolecu e

=esuits for tme nonlinear

susecotjnl1ity

Variation of effective X... of a Langmuir BlodgettFilm versus normalized concentration of active

,.... __ 3a 3,a x nonlinear otical molecule

2 of__ z z x ) 2 2 , c zz I * x z

- L

a I

U

S_

Page 156: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

L-13

CL.ASSES OF ORGANIC 14LO DEVICES

IElectro-Oic Devices. POLYMER GUIDE FABRICATION PROCESs

COMPONENTS

- Control of light with electronai

Appolications: Hybrid optical processing and optca Spin Coating (thin film formation)

communicatios -Buffer Layer and Substrate Materials

0 All Coticai Devices -Patterning

*Metallizing

- Z zn ro of lig ht w ith lig ht

B e a m C o u p lin g

- Aopicawions: AVl optical computing and ultri-laitoptical communications

ouloutsignal

Eiectrooe

4 floul

'aser beam S) Secona ciaacinc:aver .4

Anaiyze,

Suostraie1,11- active film -rsi ciaacufic

Eiec~roae aver

-, iarizatjor.

M -)oanzalion

Page 157: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

L-14

MODULATOR RESULTS

MATERIAL LENGTH; Vw A F r3

(CM. (V (nm) (MHz) (pm/V)

PMMA:pNA .0 450 533 30 .5

!HCC #0520 1.0 45 633 0.5 35.

'HCC #1522 2.0 30 830 10" 3.75

HCC #1238 1.5 4.0 830 1 20I

3 A G

r - 2nXLV,r

r .85 to .95 for these structures

T-HER MATE__-A- RRORERT- E

; P 0- M~ -. - -g " .

" "- H _ "- -

SUMMARY

- Organic NLO research at HCC has developedoutstanding NLO and EO polymers

- These materials, additionally, exhibitcombination of excellent performancecharacteristics and fabrication propertiesfor NLO and EO devices

. Initiative to develop a series of importantNLO devices has been undertaken at HCC

- Fabrication science and technology for thematerials is a key component of the initiative

Page 158: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

M-1

T. Richardson

University of Oxford, U. K.

PREPARATION AND CHARACTERIZATIONOF

ORGANO-TRANSITION METAL

LANGMUIR-BLODGETT FILMS

1

I~II

pI

Page 159: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

MAN2'4 NfP&IArTIO AND 'q4AEACTERISATI2M 'FI

'gA~-rp 6! E VAL 44fiHIR-AfL~nF- -'q Vs Hit

T. RICHiMIROO..jONETS

PARKS No"B. "ION OnPJ. VLW

A E.C J0YVKA. S.6. DAVIES ';-0

SOOTH PE % IN AAOIES

SUHPARKS MAD. 00,01. 0U1 WI. EUWLAI

A SEES OF NOVEL RUTHENIAN CU~ HAVE BEEN DEVELOPED FOR 005 CCVITO THE LAIIR-gIO0NET DIPOSITIOW TECIQE. CONPEI46 OF A£ .P,

A- RUTIHENIUM (CTCLIIPNTASIENYL-SIS TEIPRENT.PHOSMINEII NEAR

GRIMP TO A CYMOTEAPIIEIL LIQUID CRYSTAL MOLECULE WAS ENR SHOWNI7 R uTO ICREASE THRE SECONS-ONOEH WOo-LINEAR OPTICAL

NYMPOHLANIZASILIT 011 FURTEMOE INNCE POTILAVER FOMATION.

OPTICAL ABSORPTION DATA NAVE REVEALED THE EXCELLENT Ph2 P PPh3IfflODUCISILITT OF WtCESSIVE HOLATIS TRANSFER. SECONDI

HARMONIC GENERATION HAS ENR OBSERED OI THE EFFECT HAS ENI( (b)INCREASED IT INCORPORATING OBUOSTITUTSO LIQUID CRYSTAL MOLECULES

INTO IKE V"IDS BETWEEN TIRE TEIPHEHYL CHAINS OF LOJACAH OTHENIU

SUBSTITUTED MOLECUILES. WE HAVE FRITNER OPTINISEO THE 101-LIKEU FIGURERESPONSE BY SYSTENAT(CALLv VARYING THE ELECTION-IELEASING

CHEMICAL GROUP AND THE CflNJAATION WITHIN THE MOL.ECULE. Ai A TYPICAL CTHIOTEPNEVI ROLECULE M .

(5) THE 1ICsHrI to PN 1I7 I SORSTITUTED NOLLCULEPOSSESSES A LAIGER SECONR-ORDER WON-LINREAROPTICAL HYPERPOLRIIAIILITT TOM CONPOUND

25- 0.06

25-05

15, .j0010-1 1uj 0.04

- -~ 0.3

0 0

T I (c0(d

, 201-. d

IfI

WEU 51 0 0.02.0

130 140 150 160 140 150 160

AREA PER MOLECULE (12)0 1 2 3 4 5 6 7

NUMBER OF LAYERS, N

FIGURE 2 FIGURE 3

TOE BENAVIO1I OFHOLECOLES OP CORPLES I ANO 11 UNDERGOINGCOIPNESSIn as THE WATER SNFACE. (A) COPIM I AT PH 5.8, (11. C OPTICAL ABSORPTION VERSS THE IOWA! OF TVIRISFERRED 1UOUJTEtS.All O) COWPLES 11 At PH 3.8. S.I ON 6.7 HESPECTIVELT. THE THE LINEAR AELATIORSNIP IRDICATES THE REPROCIBILITY OFHOLECGLAII AREAS AT ELATIVELY H10 HUFCE PRESSURE (20 OI SUCCESSIVE WESATER EPOSTIU.CONESIUss ACCUATELT TO THE FEASND CUSS-SECTIOULd AREA OF THEntiMnm HEAR ANI.

Page 160: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

M-3(I NO INCORPORATION

12.0-

z 10.01-

(49.0i

6.00 .

2 70

6 .00

4.01 (b) INCORPORATED CTP MOLECULES

0 .

0

0 1 2 3 4 5 a

0 NUMBER OF LAYERS, N

FIGURE 5

FIGURE 4 9G6 PACK146 DERSITT STRUCTURE~S.

TUE ~~~~ ~A INAIOsI f ,*~AT~ LIQUID CRYSTAL, MOLECULES PAT REMAIN ON THE WATER

6:leuERATIOS S16AL. AND STRENGTH THE THICKNESS OF THE FILM. T HE OR

AP*IOIIWATELT LINEAR RELTITIUNSHIP IMPLIES IRE uNlIIRCTIONAL .81 THEY MAY BE INCORPORATED INTO THlE qMERIX ;ORMED IlT THlE

ALIGNMENT OF IKE MOLECULIES. RUTHENIUM SURSTITUTEU MOLECULEIS.

z 0

02

V) -- F,'- PF6 oU

'Uu [f Ruj

N w PFe N- PF47 p#4 5.i L. 5 Cd~10 "4X14'

[Rui [Raec

(a100 L 200 300 o0

COMPLEX SlO SIGNAL NORMAUJZED T0 njAE E OLCL.AIZ

1i 1.0 SUPIIASE CdCI2N 11. SUSTRATE SPEED

77.0 2 1 0.7CM MIN'77.0.

IA.

dc CYCLEcc 1 2 3 4 5 6 7 8

FIGURE 6 TM

OfT!RISATIN OF IO-L.IEA RSPOSSE. TUE SECOND NMMOIC SIGNAL FIGUREINO IECM RI LNT!

IS HRIGHLY DEPEDET UP011 TIRE ELECTION ORIO AND TE EREE OF iTUSEMi IECBNdI EEI

cokiMT10.I A) I I vs, A PLOT1 FOR dUPLE V, SIN I AI 11501

(6) TUE I-TYPE DEPOSITION OF CORIPEZ V. AIGUEN RATES OF

DEPOSITION ARE POSSIlLE VINW Cud2Z 10 THE SSVDWVSE.

Page 161: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

S. K. Tripathy

University of Lowell

OPTICAL PROPERTIES

OF

ORGANIZED ASSEMBLIES

Page 162: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

N-2

UL

Ln

SIcm 00

a)0

0) 0 cc L

LUU

0L

CL

-. 0 -

In L

a. >00k

Page 163: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

m-3

as 3

- -- -- - -- - - -- - - -

LIIIV

Ju

Page 164: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

N-4

II

I nC.

C~ at

00

Page 165: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

N.5

00 Cj0i

w 0K

InI

L-4

-0

04 CCz s

in ~ ~ -4 -o A -

Page 166: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

IN.6

0N .~ 0 -

.- '- 0

- N 0 -

N. 0N. ~ - w

N -

~NO L~

3. 4-

N

- U~NI - 3 .

3 ~

z . ... N-~ - Lii -

-C, ~

Cd Lid

Cd ~ A- Cd

Li - 3 - fl

Cd - 0.'*~~

-~ ~ 0-

N

-. 0 0

0

sj. NA ~43MOd 03~314~

- ~d.

* Li 3Li - N

S - -

S I ______ ___________ -~

C -

-' a /C',

- _ I ~Li'

- 3

~~NS 3 1

o ~- ~- '3

Li ~ *3 as / -a~. - *.3- Cd . N.

N

/ /

1 0. /

- -a CLONIiILSM

C a a Li Li Li Li Li Li C Li

Page 167: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

M-7

0

0 'U

0

- 0

0

'ILIa

zz

Page 168: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

N-8

CClA

CL~

LLit

Page 169: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

C6

I' I

04

- - aU ~ ft

aa E

0

0 2i

U U 4

I L a Z.

3'U0

*< U

UL <

0o o iC

Page 170: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

IIwN,

I

iE 4

[{.)4

,.0 " . '4

'.(S ItljI l~'J'\v, 4-I I -l-I .4 .4 I I

|F I* 'f I,,

Page 171: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

ItI

C~CL

a.0 0

C14 - -

00z ~-00

0 0 0 3

4(ed/Nw) aiflssaid 0aI~lnS

Page 172: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

N-12

'D DO

~iD75 i-Dvs4

-*4Q -A214(AINWI~~

0issi -oi

Page 173: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

0.1

I. Peterson

GEC Research, Ltd., Great Britain

THE NONLINEAR OPTICS

OFLANGMUIR-BLODGETT FILMS

Page 174: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

NONLINEAR 0P7'ICS

LANGMUIQ-awDG )Ciu 1

-rieorehic odwn I Is

n Good geomietry

w D~ese packing /akin

SUidh Up fi , AMS Geometry--AAFC'aad~y deftle' iaie

lkicknmsveoua'* V

*.*.* : - Oreay structire

1rM. .~OWtnt 9AbS&Vate

Page 175: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

TIC 0-3WHAT MOLECULE

-100N MA ' C GAI.CSO LM tU -NA O w l:

POIAp-ndaatIe

LAO, G3E-5O CVin;OP ELECTRIC KO

OP SAMC CCTRN1LArORS cis-UARTZJ

641".10qI0CI S= 37o e-s'oC s-l 1

F11 I C.3m WSO cW nonw oa~cgf T'QWS d W nWv t fw Cefid nXI'em1c SohOS. (dS sma~jf 1 05 ,,m, f jS &M s £t5MW4

F6426to~lto Sgfle dpmV

Lase FOCAS S~thq92) q c LbO

Twuo - s tate &prcvito .t, i~n E CGroham Cmss Hirst

2Pqw1 qW'q..Wj Jo'h Eri RercWo stae& blmsihan nm, JOERS (Lr3 nonlinear cpiW Phot. &ow4; Dudrha molepetty

y oscillator St&nIfi, LoVIcOster R'iw$ i'r4.WvA 0(pole ,EIQIVUt diffA~ e Huff IIG.,.r GrW

Pl___Brit f Telcmk rf

a Sto m -wj "ef n bS l hn M y newA address .....* 9 SMvi &SfrT)tkA Thstitut Ffar phsCei

* Ch.e emusf~eUni~versild~t Mo'nz FRG

Page 176: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

I0-4

" Plane of inc'dence

IR

- .p

I~- I Cn oOriengttins 532 rim

. .............: GOrE M.ERCYANIAfE P4MA Y6/ZJSE

u L; i11 250

!1300

4b ak

ttx

Page 177: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

0.5C 1

Upbeke /1-tra~ke

Gedye 21rmsmot 45-

q q4A 40 I'08 I1>>

W20.0 25

300 30 /

___ __ ___ __ _T 0.

00too 35 lo- 0.2 04 .6 08 .6

8ulaye't 4T C) I eodhroi

Measreme/t aWmajoenreawft ve Add de0.

-A~~ae -eW t . .1

Angleia Are ofcic Heriya" 1

Page 178: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

0-6Pocket - AT'R T-chni~ve MONOLAYER "C

5 ACKGELSIEFFECT

4-

3-

'p/

40

dv ' -220 pm/v

iAngle of Irc'derice

40

2 ~ m -Re(p

Imariry

Effect'

'IUAMS

IHemi'cyarni~eI (Upsbvke? (D&u*ls&tmkC)

Page 179: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

0-7

500jm

QLOS

a M&0sd0red

ass M e JO.00 Sc it r-,=n

OD2V0 0002

0 0,001

e~~o ao Zo 006-C.bluto

e ____________

du ton I-a,.00~ ,5

Page 180: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

P-1

R. S. LytelLockheed Research and Development

ADVANCES

IN

ORGANIC ELECTRO-OPTIC DEVICES

I

!• Ii !

Page 181: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

P-2

R&OO LOCKHEEDORGANICS

R&DD LOCKIIPEWDopMC AANOWLEDGEMEINTS

ADVANCES IN ORGANICELECTRO-OPTIC DEVICES DARPA us . , , 60C , R ,S

i WFF . J SIAMAI4At

MAY I ,9U wA usx

.1 FlEW4("

A LTHLE InOKwEE O ENN

AFWAIA#ML A F I1AFAFF F 9 ass

OOMC FF fAc e - mSW 1

R&D THE LOCKHEED ORGANIC LOCKHEEDORGANICS DEVICES GROUP

3 88

SYNTHESIS ANALYSIS GRATINGSiFILTERS

S ERMER S KWIATKOWSKI M STILLER

M STILLER G.F LIPSCOMB B. SULLIVAN

R LYTEL

D. SWANSON

A. TICKNOR

CHARACTERIZATION WAVEGUIDES SPATIAL LIGHT

J ALTMAN G.F LIPSCOMB MODULATORS

K ARON R LYTEL D ARMITAGE

P ELIZONDO M STILLER

G HANSEN J THACKARA M S

G F LIPSCOMB A TICKNOR M TIALERR. STONEJ THACKARA

R. STONE

ORGANICS MAJOR BENEFITS OF NONLINEAR3188 ORGANIC/POLYMERIC MATERIALS

O GANICWA YMEnlC MA(FIIAS oFFEn UNIF) OPIKAL AN)

SIRIIFtW FEAIUf's FOR OEVICE APPRICAIIONS

'WXECIAAAR PIOPEFITIES CAN BE ENGINEERED TOACIIEVE

RFSIRED IACN( CcPC PFEPE1 R E S

STRUCTURAL OPTICAL

* F&X ECLAIr, ENGIERING LARGE, Nowwso4ANr RIE-PomSE

* THIN FILMS AND Btl K CRYSTALS LOWOC DIELECTRIC CONSTANIS

' FX)M I F MPF RA TI IRE OFF PIA I 1(JN IFASt NI 0 RESPONSE

* CI IF MICALS I RIC I URALS TABILI TY* GI I OPT ICAL DAMACG I I IRE SI , )

' INIFNAL GRA) .NGS/STRUCTURE 'BROADBANO

* AIIfCIIIIECTIRAI FLEXIBIlITY I OW ABSOnPTION

Page 182: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

P-3

RII (R(;ANl(* 'M.ATERIAI .S 1)4 AiI. .1OHO88C IN INTEGR IATED) 011TIcs

0 CUJRRrENT IlECIINOLO(lY: I'i:LmNb) 0 1'R( )1:R lSUII I'NI:(-Makalsw~ DCv. Beguan I IA ORGANIC L ( MAI1:RIAI.S

. Mawrials Lkvi. I3Cgau~ 1975

= f 2 wNIVV o r 14-53 pam/V tplcd tIhus')I augcf ilxiulaiug Volae otrkoluamgVilg

aLUMIIED FABRICABILITY 0 ItELXIBLE FAI3RICA I ION

* !.TmI ILuledRCOSI~4g *. 5LOW I)imbiI.eCF tONSIANI44Low 1Iaoe Chagem~ R AllS~ Cligmicl 1CK ,1ingeAP Al

Lo.vc si W> v 0Adlm Los < 08lagrgg

* MASSa Damage )L( Ilmldi~ IN I Ilgl OlICIa Daag IH 11)10hIT

I ,g So.wil Prach III .slIsh oin,~ so, A ;'7I ravelingo.-iS Wave~s *i,,suqlo

OR&AIS OGAIDAERASI LOCKHEED R&DD LCHEORGAICS RGAIC MTERALS NO0GANICS ORGANIC E-G THIN-FILM

319OTHER DEVICES 1,8 WAVEGUIDE MODULATORS

ELECTRO-OPTIC DEVICES ALL-OPTICAL DEVICES

*SPAIIAtI I GIlT k*OUl ATOfRS. 'ETAtON SWI70IIFS. Att.IT14AMRE FrT nS. SIII OPIIC. FIL TERS. NI)E4 B'JAI

WAVEG1JR.E DEVICES

UAIFIIIAIS WIT)) lARGE, AND *NNIESONA14I NOW~INEAnimIs S.W$Tf I.AlIES r= POtllopov CLOWIL ECTnrR CONSTANTS AnE STll L FAR TOOEXIST AND AM5 AVAR. ABLE SkWL FOR1 MEC* WIED ALUMfiNU IM COOTS!GAI CIIS UIPIA

DEVICES FIS40NANT AILLMMU UVmc~ CUmosm CC-2 pltMATEnW~ S MO1NIIEO lie 7 cowpeeINT 1101W "CC-Cf37 In.-i

FAI3I1IA I 51N I)NDOWAV IN1 NEISEArMlrIiIMSI iIIIJFCr T Af1Y AI)ETUAIE FO~ltjf~ IAyfTIIIiZw~C~(wssoom~n ftSR&

GUVIED WAVE DEVICES ',91 fl ir4AT$c

Page 183: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

P-4

H&Vu LOCKHEED- 'k"Oft ORGANICS POLED POLYMER FILMS

POLED OAGANIC E-O LAYER PREPARATON 3,ee AND SLAB WAVEGUIDE MODULATORS

twavelegih - 0 83 jio| PC6S C-22

- -,6-E-0 COEFFICIENT Z 840(pm/V)

TM REFRACTIVE INDEX I 7 I 58Nm, .,, ,,, , ,.,., I * * ,(POLED)

TM INDEX DIFFERENCE 0 06 0 005(POLED-UkPOLED)

Wo LENGTH 1S 25(cm)

.... ,, ,MEASURED LOSS 3 4 0 8(dill/cm)

HALF-WAVE VOLTAGE 48 7(voltsI

LOCKHEEDORGANICS

OGNCS FABRICATION OF CHANNEL 31/8 VERTICAL AND TRANSVERSE POLINGi/8a WAVEGUIDES BY SELECTIVE POLING OF GLASSY POLYMER FILMS/WAVEGUIDES

ORG E I" C ISZAI ION 81911 ) Co LANNL WAVFGUIDES CAN IWFrAP'IICAlEr) BY SELE.TrVE ELECInI( FI-'LfI") Nr' IN THR; FILM4

1101 YlflS IJSWEnJ A01IANVnEICGUF : -

• P(XiN %GP L )G E S IIIGHEAI INDEX, E 0 CI LANNqELS IIEeD€ , ,,,.,,,

IN SI 8K8 NING. IfN(X ED. LOWER EIOX IYLR ...

WAVEGUJIE PAT1E IN DFIEO BY PI Iaa ITGWA'YPRIOR TO POLING

* REt A[IVELY LOW TEMPERATURE PROCESSING. 100-200 C

'rl EXtME f lFNSIONS IN IIEIG Ir AND WIDIII. I 100MICnONS .,., .

* VAnIABLE INDEX DIFFERENCE dn- O0t 005

* CAN MO0E AAAICII TO STANDARD SINGLE AAOI F3IRER

AFTER POLING* CONCEpT PR!OVED N DEVICE SIRIJCTIIIIdES MAtu ZEI INER

INIFIIJEt AIFIE Co7.8 EnI TRAVEl ING WAVE MOlA AIC!

Page 184: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

p.5

~ 2 -

z z -

z2 =

zz A

i

~

]

S =

I

- -~ ~ ~'-.~2-~

-7 -- S ~ *7 =--

-4-. - -- ; ~

2 * S.* S - - - ~ = -

- - -~ - - .-- -S.

= ~1 Al *~ Z. ~ S___ 1-i-i--

S --

=5.- ~ __

-I- - z~~E::~tK~j

- S *~

-.

r -*~~I U,

-~ . .5- =5* '.5-.

Page 185: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

P-6

0ULU

0LU -

0 -u

(Uw La -- -

-mr-

z Z~

7 z~ z

Page 186: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

Q-1

B. K. Nayar

British Telecom Research Laboratories, U. K.

ORGANIC NONLINEAR OPTICAL DEVICES

ANDMATERIAL CONSIDERATIONS

iI!IU

Page 187: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

>1 Q-2E-4)i

zz

E-E

E-4cn ow 0

cn En

cn IWOZ: 9.

cc-"4S~~

go,

03

0h

.00

Page 188: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

I Ci i

+ + d 0

E" Ea,.

E -E

2 =0

au

CS

cc)

" II0 I- r

. Jr-

1.

> -* > . awl

0 0r

94 4 it

Page 189: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

.Q-4

0

bo

a C

CL)

Z 0

-- Q Q; "- 0.

I-0 0 0 - ;

IW W.O

C 0

E E

Z

; ;. -- l Ii i I ...1 .0 CDll l .

Page 190: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

Q-50

tA..

go Ec w m, 0.I-V

min

U U

.0<

°- U

0

- U

mC

EE0

zI~ 0 4

.0

-~ In

(I I le

Page 191: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

Q-6

0 s

ci S

-...m~ co

cn,

cn

E ZECI go

e -

.- ~ 0

Page 192: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

II

-"E-4

ClL

Cl) W W !

• I 0* -q 0

F4

Z 0

m X

Page 193: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

Q-8

E-

LuL

IV,-. Lu ._'U

.-. ,

> ES .- .= SI-

"-u . 0

0 &..

0

~E

--.

-I;I

©

0@

0

cu

0q w.9.acc w

Page 194: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

p.,. . is 1W

II

Cl)L

0?I

E ~ -Iwcc cca*>

5 5

-CW

L: 0 0h 4 agV

0 @1 E

Page 195: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

_ 0

0.

0,,E v)00

os

Page 196: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

0

z cl

-V CFO-V

to 0.

-C E

Z 1 ; C

0.1

7a 2 - 0

00

0 0- 1

S A- C0

eaa

cq w En

- 00E*-4

~ 0 E

-i - 0

- @2

Page 197: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

Q-12E

c 0

- 0 0

-cai

V0- \-

0 --q---._ 1

003

0i 0

-o 0

023CD

Page 198: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

Q-13

IE

WC X-C 2t00 4E

a.2

C-0

0 U0

-d 0

rdCd

co

Page 199: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

All

a r

K)I

Page 200: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

Q-15

E-4a

7E C

to cw

x E -

IV

IV E-~9 -E)

a 0 0 aC _

w cuCu Cu ~ Sto

L. .

- -.-a

Page 201: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

Q-16

2 :-

0 -

oc

E-4

w~ 0

-j E

w E CE1-4 -

t--

CO 00) L

Page 202: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

Q17>-

.zz

alo

-d A

- 9

00

,0× V-4 k- -. 00 ct- c

cc E

c 0

cc)D D E-4)

I-l

Page 203: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

Q-18

cI~ C

z -N

0

Q U

C0o LO

C0 C

004

-n 1Z 0i000

c E

ENJ 0

- C

C)

Page 204: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

Q-19

w C)2

01

-!

CCb-

CCw 3I 0

00 (DL z CD ~

CD 0

0 U0

0 CL0

CN

A. 0

oc

Page 205: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

Q-20

00

bc

22

Cd)

E- - -

ad C4

S..

m E0w 0

- C

- 9z

Page 206: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

IS Q-21

>, C-C.)>

Cd 0

C,

I IV

.- IV .2w c

I 0 0 .) 0 C

0n w

!4) C. ~ - o

U

Z ,- 0.0 VE

U

'- E01 o " -

0

Page 207: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

0-22

0 0in

0~ 0

0. D

_ 0

CQu

(-) EE

3 '3

CV,

fta)

0-

S. S.cCu

Go '-

cc0 ~

~- Cu o

Page 208: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

Nc

ba

I-

/ ww

cn w

0 Vcm At

Page 209: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

0.24e~J2 V

0

0

4-1

0.0 >00

o ~co

400

z

c

S3 DC

M-' uu'a odD-we4po

- U,

Page 210: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

Q-25

0n

_ wo

C) 0

MLUw a

U 2

-la3

rn c-,-> U

leo

Page 211: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

Q-26x

|x

C C C

wq

GE V4 4

EE

--

0

Co

Q

c 0

--

c €

c @IJ E

m~ E

C-0

N O.

Page 212: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

E-4J

ed "a S. C

0 V2

S3 =93 VI

-La co ,

-) S..x > > C

12E-4-

- -4 0

0 x co

Page 213: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

Q-28

zT

wO _

S 0

- Ecn E0 C.)

LM 0

E

19 -c-E-o IILo

-I

Cc2 4 0

C4 C) oN

o I E

Page 214: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

Q-29 I

C

Loo

- ~ -

.0 C 6

o-e r_04) w w

c~a~ -

d w W

- II i .

Page 215: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

Q.30

4?

Cu

4?~.1

4?

B-Cu4?

U2 CI-

0-~I2

C.. 0 02 ~I.I ~ S

Li CS.. bOC. - CuUo ~

Q 1.. ~ 0a ~2 j~ ~ a'C. C)E ~ .~

0 C CuS.. 4? .-S.. So Cu *-~ 4?

Li *~ .4.. 5- U 4? .5 0 0S.. C

-~ 4? EC -~

3- I.-I I 4?

- I- Cu- I I ~a' Cu Q 0 0

~I,4~Q *

Page 216: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

R-1

M. Thakur

AT&T

TOWARDS NONLINEAR OPTICAL

APPLICATIONS OF POLYDIACETYLENES

I

Page 217: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

R-2

TOWARD NONLINEAR OPTICAL APPLICATIONSOF POLYDIACETYLENES

M. THAKURAT&) BELL LABORATORIES

B. 1. GREENEJ. ORENSTEIN M. GOMEZK. TAI I. TANAKAG. C. CHI A. TONELLIK. J. O'BRIENV. SHANI

TOPICS

" MATERIALS ASSESSMENT

" GROWTH OF THIN SINGLE CRYSTAL FILMS

* FABRICATION OF DEVICE STRUCTURES

" DEMONSTRATION OF CHANNEL WAVEGUIDING

" INTENSITY DEPENDENT PHASE-MODULATION

IMPORTANT PARAMETERS FOR-MATERIALS SELECTION n 0

A ETCO* EXTENT OF CONVERSION (MONOMER - POLYMER) 3 * -m~~oo Im

" EXTENT OF CONJUGATION (PLANARITY)231

" THERMAL STABILITY (THERMOCHAOMISM)

" SOLUBILITY

" EASE OF CRYSTALLIZATIONL301

$06

806

~~296

14 0 2 2* 24 26

Page 218: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

I

I R-3

I 13 C Choncal Shifts of Polydlacelylenes

~~C-0 1: c 3C. ppmr vs. T S

so a CAO )C. -CA a-CH2 -CH 2. r-CH2

ETCD 157.5 131.8 107.4 31.3 24S

PTS-a - 131.3 107.1 --

(blue)

PTS-12 - 1310 106 - -

SB s (bkulI ,,., A. .. L... (lue - ___o______

TCDU - - 1073 - -

ETCD 1583 132.0 103.8 378 264(red)

TCDU 155.8 131.5 102.9 379. 323 259.21 8 280 2018

' s o se (red)

ETCD 1581 1308 i102.5 373 272..... ,; --- -- -- -- --.-- .--- .-- -- -. ........ (M e")-6C 14C Z -C 900 C 60 4c C s _______ ________

CONCLUSIONS FROM NMR STUDIES

" THE CONJUGATION LENGTH IS DETERMINED BY THE EXTENT OFPLANARITY OF THE CHAIN-BACKBONE.

" INCREASE OF CHAIN LENGTH DOES NOT GUARANTEE INCREASEOF CONJUGATION LENGTH.

" THE ACETYLENIC FORM IS PREDOMINANT IN POLYDIACETYLENES

INDEPENDENT OF PHASES.

IIII

Page 219: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

R-4Jf4G L E'

GROWTH OF THIN FILM CRYSTALS PRESSURE

" THE SHEAR METHOD _MA

ORIENTATIONAL PRINCIPLES SUBSTRATESd

REQUIREMENTS ON MOLECULAR SHAPE 11,1u

GROWTH PARAMETERS(aCONTROL OF THICKNESSOPTICAL QUALITY OF FILMS PRESSURE

" COMPARISON WITH THE L-S METHOD

SUSIRATE

" ASSESSMENT OF APPLICABILITY SBTAE

NUCLEUS

COMPARISON OF THE CALCULATEDMOLECULAR LENGTHS WITH THE OBSERVED

S d-SPACINGS

A

MATEIAL CACULTEDCOMPENSATED cf-SPACINGS OFLETERGAL C LCULAE LENGTH I1ST ORDER

SPREADING COEFFICIENTL 'ni AFETOSA

RC SC - C a CR WITH A

2. - (C1 2) 4 OCONH C2 H1 -17.9 17.9 17.87=WA W88 3. - (CH2)4OCO NH CH 5 -19.5 19.5 18.94

= SURFACE TENSION 4. - CH 2 0S02 Cc H4 CH3 -14.8 12.9 12.87

WA8 WORK OF ADHESION S. - (CH2) OCO NH C)42 C00C4 1, -26.9 26.9 26.80Weg= WORK OF COHESION NH 2 -. & C 3 N -8.0 8.0 8.40

FONPNAEU SRAIGH"'4

D-NO, -10.5 10.5 10.05

d- I uam

TOTAL SHEAR T = Tmp + TxLATERAL PRESSURE P - 10O yN ES/CM 2

EOUIUBRIUM SPREADING PRESSURE OF A MONOLAYERPmom -107 DYNES/CM

2

Page 220: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

R*5PRESSURESENSOR

9

BARRIER

F I. AIR INTERFACE_______________,/COMPARISON OF THE L-B AND

THE SHEAR METHOD. .. .WATER

* POLAR INTERACTIONS HAVE IMPORTANT ROLES IN BOTH THEMETHODS.

* IN THE L-8 TECHNIOUE A LIQUD IS USED AS THE SUBSTRATE.AIR IN THE SHEAR METHOD SOLID SUBSTRATES ARE UTILIZED.

INTERFACIA THE L-8 METHOD APPLIES TO AMPHIPHILIC MOLECULES ONLY.INTERFACIAL .THE SHEAR METHOD IS APPLICABLE TO A BROADERREGION !RANGE OF MOLECULES.

* THE L-B METHOD PROVIDES ORDER ALONG ONE DIRECTION ONLY.THE SHEAR METHOD LEADS TO 3-0 ORGANIZATION.

WATER 0 THE L-S FILMS HAVE MICRO-DOMAIN MORPHOLOGY (POOROPTICAL QUALITY).THE SHEAR-GROWN FILMS ARE UNIFORM SINGLE CRYSTALS(EXCELLENT OPTICAL QUALITY).

INTENSITY DEPENDENT PHASE MODULATION

n +nz

A6 = 7- r n2 I L , L = LENGTH OF PROPAGATIONA PHASE SHIFT

FOR O.8 TO 2.0* (HERMANN ANDn2 OF PTS- 7 x 10

- 6 cm

2/MW SMITH. 1980)

IF OPTICAL PULSES (-Ig.I OF PEAK POWER- S00 mWARE FOCUSSED ON A CROSS&SECTION-1 fm2

FOR L-1.4 mm. SEMICONDUCTOR

LASER(-4 1.3, .

5 5 SM FIBER

OUT,L.. -f£ 'i IARA

IN2 LOUT2 raj DJPER

WITH SUSPICOSECOND PULSES hoNe LASERENERGY REQUIREMENT < 1 p/bitTHE DATA-RATE THAT THE DEVICE COULD HANDLE-- I THzNONABSORPTIVE- NO THERMAL DAMAGE. PTS

-A ~ SiO2

UBSRATE

SAMPLE

I

Page 221: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

R-6

SUMMARY

" A COMPARATIVE EVALUATION IS MADE FOR DIFFERENTPOLYDIACETYLENES IN RELATION TO NLO DEVICEAPPLICATIONS.

" C'3 - NMR RESULTS SHOW THAT THE CONJUGATION LENGTH ISDETERMINED BY THE EXTENT OF PLANARITY OF THE CHAINBACKBONE AND NOT BY THE CHAIN LENGTH.

" THE ORIENTATIONAL PRINCIPLES OF THE SHEAR METHOD AREDISCUSSED IN COMPARISON WITH THE L-8 TECHNIQUE.

SUMMARY (Cont.)

" THE SUPERIORITY OF THE SHEAR METHOD IN PROVIDINri GOODOPTICAL QUALITY SINGLE CRYSTAL FILMS OF CONTROLLEDTHICKNESS AND ORIENTATION IS DEMONSTRATED WITH MANYEXAMPLES.

" CHANNEL WAVEGUIDING IS DEMONSTRATED (PROPAGATION> 5 rmm) FOR SHEAR-GROWN PTS FILMS.

" PRELIMINARY RESULTS OF INTENSITY DEPENDENT PHASE CHANGEIN PTS WAVEGUIDES ARE DISCUSSED.

Page 222: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

S-1

D. Haarer

Universitat Bayreuth, West Germany

HIGH RESOLUTION

LASER SPECTROSCOPY IN POLYMERS

I

• II

--U- m mm l -

Page 223: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

S-2

V~

II 1 ~ CLI

73 1

~~:3

1.0 . --

1C

- 3 -2

A -03 .C A .c

-3 c .

CC

C --

4-4 io q - ,

Page 224: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

S-3

I A

1" 1. j 11

I

* o 1- .

:r C

Iit

I~ ~.- .. .a-

~~ o0

7 M

0 EA

* I 'CL

Page 225: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

S-4

-o C

3 EU

cc ~

if~ A

--- ------ --- --

TU

(0

Page 226: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

S-5

9 al12 '

VVar 'w &

0 ~-~.0 Z

LL:~

o 0

- 0

ooow c

Q a 0

714Wei* -LUJU U.U. 2

Page 227: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

S-6

2, 2

(E

~Z(: q u 2_ _ _ _ __ _ _ _ _ _ _ _

a I

5 a0 :L

Z-7

CU co-

cll

00

2 0W5I11

a m / jw ~. ~a

.2 -n 40

Page 228: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

S-7

i .~U -. 9 .2

<1 * 009

* - I0 sU 0

0-CC U -

S c-~u

0 00

v. d t

c-c

(WIIAI 3 16UOJS paq Ii~mi

~'[ZH~'1AV

Page 229: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

POSTER SESSIONABSTRACTS

Page 230: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

Optical Kerr Measurements on some Ferrocene Derivatives.

C.S.Winter. J.D.Rush and S.N.Oliver.

British Telecom Research Labs.,Martlesham Heath,Ijswich IP5 7RE,

ngland.

We report here preliminary results from a study of the third order non-linearities ina range of organo-metallic compounds. These initial measurements have beencarried out carried using the optical power limiter technique developed by Soileauet al 1), where the critical power for self-focusing is measured and used to calculaten. The materials measured were solutions of ferrocene in ethanol, varying from101 to 10"' molecules/cc and a liquid ferrocene derivative,bis(trimethylsilyl)ferrocene. A value of Y for ferrocene of 4.1x10-1 esu was foundfor the solution studies, in good agreement with that measured for the liquidderivative of 4.6x 1073' esu. The experiments were carried out at 1.06 am with 10 nspulses. We are currently repeating the measurements using other techniques andshorter pulses to distinguish the various possible contributions to the observed n:.

(1) M.J.Soileau, W.E.Williams and E.W.Van Stryland:IEEE J Quant Elect..OE-19,(1983),731.

Page 231: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

Theoretical models for the second hyperpolarizabilitv ofnovel conjugated polymers

David N. BeratanJet Propulsion Laboratory

California Institute of TechnologyPasadena, CA 91109

Theoretical models will be presented for the chain length dependence of thesecond electronic hyperpolarizability of simple polyenes, simple polyynes,and more complicated unsaturated organic materials. Thehyperpolarizability of conjugated polymers which incorporate novellocalized electronic states will be described as well. These material, presentthe possibility of achieving enhanced hyperpolarizabilities due to mixing ofappropriate "gap states" with the delocalized states of the conjugatedpolymer. They also present the possibility of designing materials withswitchable" hyperpolarizabilities.

Page 232: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

NONLINEAR OPTICAL PROPERTIES OF TRANSITION METAL POLY-YNEE

E.A. Chauchard, M.P. Cockerham, P.L. Porter, S. Guha, C.C. Frazier

Martin Marietta Laboratories

1450 South Rolling Road

(301) 247-0700

Data from third harmonic generation (with a 1.06-um fundamental),

power limiting and four-wave mixing measurements of solutions and films of

transition metal poly-ynes were used to verify that these compounds have

large third-order optical susceptibilities. The large third-order

nonlinearities observed in four-wave mixing studies of metal poly-yne

solutions may originate, in part, from contributions from the real and

imaginary components of intense two-photon absorptions associated with the

metal-organic compounds. We will discuss our latest four wave mixing

experiments and the direct observation of two-photon absorption in metal

Do.y-vnes.

We will also discuss the correlation of polymer chain length and

structure with third-order hyperpolarizability per repeat unit for several

metal polymers and oligomers.

Page 233: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

REVERSE SATURABLE ABSORBERS: INDANTHRONE AND ITS DERIVATIVES

R. S. Potember, R. C. Hoffman, and K. A. StetyickJohns Hopkins University Applied Physics Laboratory

Johns Hopkins RoadLaurel, MD 20707-6099

Indanthrone has been shown to exhibit the phenomenon of reverse saturableabsorption. 1 The wavelengths at which indanthrone behaves in this fashion canbe changed by structural modification of the indanthrone chromophore. Thederivatives which have been synthesized have been shown to be more efficientreverse saturable absorbers than the parent chromophore.

It is advantageous to extend the range of nonlinear behavior to any desiredportion of the spectrum, and this is best accomplished by substitution on thearomatic portion of the indanthrone molecule. We have demonstrated that oxidizedindanthrone, monochloroindanthrone and an oligomer of indanthrone are moreefficient saturable absorbers than the parent. Oxidized and monochloro-indanthrone exhibit reversr saturable absorption at both 1064 nm and 532 nm,whereas indanthrone itself exhibits the phenomenon at 532 nm only. Theoligomer, which consists of three anthraquinone units, has proved to be an effi-cient reverse saturable absorber at 1064 nm as well a5 at 532 nm.

1C. R. Giuliano and L. D. Hess, IEEE J. Quantum Elec. QE-3, 338 (1966).

This work was supported in part by the Dept. of the Navy under Contract No.N00039-87-C-5301.

1I

Page 234: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

THE PREPARATION AND CHARACTERIZATION OF POLYMERIC MATERIALSWITH ENHANCED SECOND ORDER NONLINEARITLES. M.L. Schilling, H.E.Katz, D.I. Cox, AT&T Bell Laboratories, Murray Hill, NJ 07920.

We have recently introduced a new class of organic materials for second ordernonlinear optics, consisting of poled films of dye-containing polymers. In the pastyear, some uncommon functional groups (di- and tricyanovinyl) have been shown toenhance the molecular susceptibilities of the nonlinear moieties when used instead oftheir more usual counterparts. Dyes with enhanced nonlinearities by virtue of thecyanovinyl substituents have been exploited in the preparation of bulk materials withsome of the highest second order susceptibilities yet reported.

The synthesis of conformationally defined dye aggregates, whose subunit dipolesare constrained to be additive, is in progress. These dyes can then be incorporated intopolymeric materials, taking advantage of their enhanced effective dipole moments forincreased orientation in poling experiments. We will report some of the new syntheticorganic chemistry that has been utilized in preparing our latest electro-opticalmaterials.

A

II

Page 235: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

Second Harmonic Generation in Doped Glassy Polymer Films as a

Function of Physical Aging

Hilary ". Hampsch[a', :Jan Yang,'t , George ':. Wcngo,

and John. M. Torkelsonla,c:*

[a! Department of Materials Science and Engineering

't: Department of Physics and Astrzncmy

[c7 Department of Chemical Engineering

and the Materials Research Center

Northwestern University

Evanston, llinois

March 31, 1988

ABSTRACT

The temporal stability of second harmonic generation (SHG;

intensity is measured in poly~methyl methacrylate) (PMMA) and

bisphenol-A-polycarbonate (PC doped with nonlinear optical dyes

in electric field poled films. Doped PC films show slower SHG

decay than doped PMMA films at times less than S hours. In

PC-CANS films aged 10 hours at 250C, there is no SHG decay over

the first 8 hours, whereas in PMMA+DANS aged at 250C and at 60oC

the effect is much smaller. Two dopants show the effect of size

on SHG decay, with the larger dopant showing increased temporal

stability. Good agreement is obtained when decay curves are fit

using a Williams-Watts stretched exponential.

to whom correspondence should be addressed

Page 236: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

ELECTRO-OPTIC, POLYMER CLAD, E-FIELD SENSOR

L. MICHAEL HAYDENGERALD F. SAUTER

UNISYS CORPORATION, CSD, St. Paul, MN, 55164

Abstract

There is a military need for sensor systems that combinehigh sensitivity, immunity to EMI/RFI, large bandwidth, and lowpower and cost. The hybridization of present day electroniccomponents with optical components offers the promise of sensorsystems that meet these requirements.

Unisys has been developing a PVDF-coated fiber optic,electric field sensor and now has expanded its program to includenonlinear organic polymers as cladding and waveguide material.This paper will report on progress using Guest/Host (GH) polymersas cladding material.

The concept of an all dielectric high frequency sensor isdemonstrated. The sensor consists of a Ag" exchange waveguidecoated with a GH nonlinear polymer glass. The sensor isincorporated into one arm of a Mach-Zender interferometer andexhibits a figure of merit of 4 microradians/volt/meter/meter.The frequency response is flat from DC to our currentinstrumentation limit of 5 MHz.

This sensor design was chosen primarily as a vehicle thatwould allow an easy method to test and verify design parametersfor fiber sensor systems. These parameters include index anddepth of guide vs. index, thickness and E-O coefficients of thecladding. We will present a comparison of the results of thissensor with those from the PVDF sensor program.

Page 237: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

4.)LECUL1%R CONFCRmAT:ON .A!D THE STAB::-:=

TICT STATE :N P,?' -DISUBST:-TUTE-I,6-DIPHENYL-1. 3, 5- HE.TRIENES

C.T. Lin, H.W. Guan, R. K. McCoy and C. W. SpanglerDepartment of Chemistry

Northern Illinois University

DeKalb, IL 60115

ABSTRACT

_The p,p-disubstituted linear diphenyl polyenes are expected to have a highoptical nonlinear susceptibility because of its large permanent dipole momentinduced by the substituents . The photophysical properties for a series ofp,p'-disubstituted-l,6-diphenyl-l,3,5-hexatrienes (referred as DA-DPH) areinvestigated, where D and A are the electron-donating and - accepting groups of-OCH3, -N(CH3 )2 and -NO2. In all solvents used, a dual fluorescence isobserved for D,A-DPH containing the internal rotation groups of -N(CH3 )2 and/or-NO2 , suggesting that the "a*" fluorescence (the locally excited state givesthe normal "b*" fluorescence) is originated from a twisted intramolecularchange transfer (TICT) state. The suability of TICT state is sensitive to theD and A substituents and their relative twisting angles. The observed resultsprovide the evidence of the 7-eLectron distortion and thus the enhancemet: ofoptical nonlinearity in this class of molecules.

Page 238: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

Second and Third - Order Nonlinear Optical Properties ofEnd -Capped Acetylenic Oligomers

Joseph W. Perry, Albert E. Stiegman, Seth R. Marder and Daniel R. Coulter

detPrgopus/bn Laboratory, California Instite of Technology480 Oak Grove Drive, Pasadena, CA 91109

We have been investigating the second and third - order nonlinear opticalproperties of avariety of acetylenic oligomers. A series of symmetric acetylenicoligomers of the form

R -(C=C) - R In

have been investigated for third - order nonlinear susceptibility. A series of newcompounds of the form

D- (C=C) -A IIn

where D and A are electron donor and acceptor groups, respectively, havebeen synthesized and investigated for second - order nonlinearity. Third -order nonlinearsusceptibilities of series I molecules in solution have beenmeasured using third harmonic generation (THG). THG susceptibilities at1064 nm have been determined for various oligomer lengths and end - cappinggroups. X(3) increases with length and varies with the nature of the end -group. Series II compounds have been screened for second harmonic gener-ation by using the Kurtz powder method. Several samples show SHG efficien -cies comparable to urea. Characterization of molecular hyperpolarizabilitiesforthe series is in progress.

Page 239: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

Optical Field Induced Scattering inPolymer Dispersed Liquid Crystal Films

P. Palffy-Muhoray, Michael A. Lee and J.L. WestLiquid Crystal InstituteKent State University

Kent, OH 44242

ABSTRACT

We report observations of optical field induced scatteringin polymer dispersed liquid crystal films due to reorientation ofthe liquid crystal molecules by the optical field of a CW argonion laser. These composite materials consist of nearly sphericalliquid crystal droplets dispersed in a polymer binder. Aspreviously reported 1,2,3, films of these materials may beswitched from an opaque scattering state to a clear transparentstate by application of a d.c. or low frequency a.c. electricfield. An applied low frequency electric field is used to alignthe liquid crystal in an orientation such that the refractiveindex of the liquid crystal within the droplet is matched withthat of the polymer binder. If a sufficiently intense opticalfield is applied to the transparent film, it will reorient theliquid crystal director, and give rise to a refractive indexmismatch and hence scattering.

1. J.W. Doane, N.A. Vaz, B.-G. Wu and S. Zumer, App. Phys. Lett.

48, 269 (1986).

2. J.L West, Mol. Cryst. Liq. Cryst. (in press).

3. S. Zumer and J.W. Doane, Phys. Rev. A 34, 3373 (1986).

Page 240: NONLINEAR OPTICAL MATERIALSnonlinear optical activity and to improve the physical properties of materials under consideration for use in devices were presented. Device Applications:

FABRICATION OF WAVEGUIDE STRUCTURES FROM SOLUBLEPOLYDIACZ"YLENES. G.L. Baker, N.E. Schlotter J.L. Jackel, P. Townsend,S.Etemad, Bell Communications Research, Red Bank NJ 07701.

Thin waveguide structures were fabricated from spun films of poly(3-BCMU) andpoly(4-BCMU) by two separate processes. In the first, micron-sized features werepatterned in polydiacetylene films using deep-UV lithography. This multilayer processutilizes a novel silicon-substituted polyacetylene as the resist layer, and can be used togenerate sub-micron sized features in thick (> 1 I m) polydiacetylene films.

In the second method, composite waveguides were fabricated from a patterned glasssubstrate and an overlayer of the polydiacetylene. These composite structures arerelatively simple to prepare and are mechanically robust. Guides constructed asdescribed above performed well with minimal losses and single-moded behavior atlaser wavelengths of 1-1.5 g m.

- .r- ..

_-j

) co

I I

R. fV) - 0

PL

! !~

- __ .as ll-.....-