1

Nex

t Gen

erat

ion

PO

N S

yste

m-A

cces

s P

latfo

rms

Inte

grat

ion-

Nex

t Gen

erat

ion

PO

N S

yste

m-A

cces

s P

latfo

rms

Inte

grat

ion-

Feb.25, 2008

Akio Tajima

System Platforms Research Labs,

NEC Corporation

Ｐag

e 2

OFC

2008

San

Die

go

Out

line

1.

Optical Acc

ess

Techn

olo

gy and market

2.

Next Genera

tio

n Acce

ss

(NGA)

1.Requirements for NGA

2.NGA Standardization Status

–Topics, Direction, Status, Feature

3.

R&Dactivit

ies

in NE

C g

roup

1.Key optical devices for NGA(10G, WD

M)

2.WDM Access Transport System

3.OWI Protection

4.

Summary

Ｐag

e 3

OFC

2008

San

Die

go

NG

A

FSA

N, I

TU-T

10G

E-PO

N

IEEE

802.

3

Opt

ical

Acc

ess

Tech

nolo

gy E

volu

tion

STM

PON

2005

bit /

s

2006

G-P

ON

　　　　　　　

FSA

N,

ITU

-T

100K1M10M

100M1G

600M

B-P

ON

Year

2000

2001

1997

FSA

N, I

TU-T

FSA

N, I

TU-T

2003

150M

B-P

ON

2002

2004

GE-

PON

IE

EE80

2.3

STM

PON

2007

2008

2009

2010

10G

Tele

phon

eSt

illIm

age

Tele

co

nfer

ence

Bro

adca

stH

DTV

Rea

listic

Com

mun

ica

tion

�Opt

ical

acc

ess

tech

nolo

gy e

nabl

es H

DTV

dis

tribu

tion

to h

ome.

�Hig

her b

andw

idth

/cap

acity

mor

e th

an G

iga

PON

tech

nolo

gies

m

ake

it po

ssib

le to

com

e in

new

attr

activ

e se

rvic

es.

TDM

100G

WDM

, etc

.Ja

pan

Tria

l 198

0�s~

Com

mer

cial

199

7~

�Ban

dwid

th/c

apac

ity is

incr

easi

ng.

�We

can

now

fully

enj

oy th

e be

nefit

s of

G

igab

it cl

ass

serv

ice.

Ｐag

e 4

OFC

2008

San

Die

go

Bro

adba

nd S

ubsc

riber

s in

Jap

an

0.0

5.0

10.0

15.0

20.0

25.0

30.0

35.0

40.0

45.0

03

04

05

06

07

08

09

10

11

12

Year

Subscribers (Millions)

FTTH

DSL

CATV

FWASo

urce

: Min

istr

y of

Inte

rnal

Affa

irs a

nd C

omm

unic

atio

n of

Jap

anan

d Ya

no R

esea

rch

Inst

itute

, Ltd

. Nov

embe

r 200

7

�Bro

adba

nd s

ubsc

riber

is s

tead

ily in

crea

sing

.�F

TTH

sub

scrip

tions

sur

pass

10

Mill

ion

(Sep

t. 20

07)

�Mea

nwhi

le, D

SL s

ubsc

riptio

ns d

eclin

ed.

Fore

cast

>10M

Tota

l 27.

8M>1

8M

Ｐag

e 5

OFC

2008

San

Die

go

Cur

rent

Opt

ical

Acc

ess

Arc

hite

ctur

e

ON

U

ON

UVD

SL

Opt

ical

Sp

litte

r

Cen

tral

Offi

ce

PON

OLT

Med

ia

Con

vert

ers

Apa

rtmen

t

Con

sum

er

Serv

ice

Leas

ed

line

ON

U

Busi

ness

Se

rvic

e

Sin

gle

star

PO

N

Wire

less

Se

rvic

eM

obile

bas

e st

atio

n

Plu

ral u

sers

sha

re fi

ber

and

OLT

.

Ｐag

e 6

OFC

2008

San

Die

go

Out

line

1.

Optical Acc

ess

Techn

olo

gy and market

2.

Next Genera

tio

n Acce

ss

1.Requirements for NGA

2.NGA Standardization Status

–Topics, Direction, Status, Feature

3.

R&Dactivit

ies

in NE

C g

roup

1.Key optical devices for NGA(10G, WD

M)

2.WDM Access Transport System

3.OWI Protection System

4.

Summary

Ｐag

e 7

OFC

2008

San

Die

go

Req

uire

men

ts a

nd K

ey T

echn

olog

ies

for N

GA

Req

uire

men

tsK

ey T

echn

olog

ies

�H

ighe

r ban

dwid

th/c

apac

ity th

an

curr

ent s

yste

m

�C

oexi

sten

ce w

ith in

stal

led

syst

em�

Max

imum

util

izat

ion

of in

stal

led

Opt

ical

Dis

tribu

tion

Net

wor

k (O

DN

).

�Li

mite

d flo

or in

CO

�Li

mite

d po

wer

sup

ply

in C

O

�W

ider

cov

erag

e ar

ea�

Fixe

d an

d w

irele

ss in

tegr

atio

n

�H

ighe

r Rel

iabi

lity

�Se

curit

y

�TD

M (e

.g. 1

0Gbp

s/λ)

�W

DM

(e.g

. col

orle

ss O

NU

)�

Dua

l-rat

e B

urst

Rec

eive

r

�H

igh-

pow

er o

ptic

al tr

ansm

itter

and

hi

gh-s

ensi

tivity

opt

ical

rece

iver

for

high

er-s

peed

(10G

bps)

tran

smis

sion

.�

FEC

�In

tegr

ated

acc

ess

plat

form

s (1

0GE-

PON

sys

tem

)

�W

DM

repe

ater

�FT

Tx/W

irele

ss In

tegr

atio

n

�FT

Tx/W

iMAX

Prot

ectio

n�

Cry

ptos

yste

m (e

.g. Q

KD)　

Ｐag

e 8

OFC

2008

San

Die

go

IP-T

V S

ervi

ce T

rend

Sou

rce:

http

://w

ww

.ieee

802.

org/

3/cf

i/030

6_1/

cfi_

0306

_1.p

df

Req

uire

muc

h m

ore

band

wid

th

Ｐag

e 9

OFC

2008

San

Die

go

Max

imum

util

izat

ion

of in

stal

led

OD

NC

oexi

sten

ce w

ith c

urre

nt s

yste

m1.

Compatible fiber plant with current

system

–Fiber plant which is constructed for current

system, must be used for NGA.

•G.652 SMF

•Power bu

dge

t (

30

dB

and

penal

ty

< 1 dB

, or 29 dB

without pen

alt

y)

•20km reach

•More tha

n 3

2 s

pli

t r

ati

o

2.

Coexistence with current system.

–NGA must avoid to interfere with existing

current system in a same fiber.

–Optical overlay of RF video must be also

supported.

Sou

rce:

http

://w

ww

.ieee

802.

org/

3/10

GE

PO

N_s

tudy

/pub

lic/m

ay06

/ota

ka_1

_050

6.pd

f

Ｐag

e 10

OFC

2008

San

Die

go

Opt

ical

Acc

ess

For W

irele

ss B

ack-

Hau

l�

4th

Gen

mob

ile c

omm

unic

atio

n w

ill be

ub

iqui

tous

�B

andw

idth

: ~30

Mbp

s/us

er, 1

00M

~1G

bps/

acce

ss

poin

t�

Acc

ess

poin

t cov

erag

e w

ill d

ecre

ase

�N

umbe

r of a

cces

s po

ints

will

incr

ease

�P

ON

is a

nat

ural

bac

k-ha

ul s

olut

ion

for t

he 4

th G

en

acce

ss p

oint

s�

Nex

t gen

erat

ion

wire

less

bac

k-ha

ul�

802.

11n:

up

to 1

00 M

bps

per d

evic

e�

802.

16e:

up

to 7

0 M

bps

per a

cces

s po

int S

ourc

e: h

ttp://

ww

w.ie

ee80

2.or

g/3/

cfi/0

306_

1/cf

i_03

06_1

.pdf

Fem

teC

ell

Ｐag

e 11

OFC

2008

San

Die

go

Req

uire

men

ts a

nd K

ey T

echn

olog

ies

for N

GA

Req

uire

men

tsK

ey T

echn

olog

ies

�H

ighe

r ban

dwid

th/c

apac

ity th

an

curr

ent s

yste

m

�C

oexi

sten

ce w

ith in

stal

led

syst

em�

Max

imum

util

izat

ion

of in

stal

led

Opt

ical

Dis

tribu

tion

Net

wor

k (O

DN

).

�Li

mite

d flo

or in

CO

�Li

mite

d po

wer

sup

ply

in C

O

�W

ider

cov

erag

e ar

ea�

Fixe

d an

d w

irele

ss in

tegr

atio

n

�H

ighe

r Rel

iabi

lity

�Se

curit

y

�TD

M (e

.g. 1

0Gbp

s/λ)

�W

DM

(e.g

. col

orle

ss O

NU

)�

Dua

l-rat

e B

urst

Rec

eive

r

�H

igh-

pow

er o

ptic

al tr

ansm

itter

and

hi

gh-s

ensi

tivity

opt

ical

rece

iver

for

high

er-s

peed

(10G

bps)

tran

smis

sion

.�

FEC

�In

tegr

ated

acc

ess

plat

form

s (1

0GE-

PON

sys

tem

)

�W

DM

repe

ater

�FT

Tx/W

irele

ss In

tegr

atio

n

�FT

Tx/W

iMAX

Prot

ectio

n�

Cry

ptos

yste

m (e

.g. Q

KD)　

Ｐag

e 12

OFC

2008

San

Die

go

Acc

ess

Pla

tform

s In

tegr

atio

n ov

er 1

0GE

PON

ON

U

ON

UVD

SL

Cen

tral

Offi

ce

PON

OLT

Apa

rtmen

t

Con

sum

er

Serv

ice

Leas

ed li

ne

ON

U

Busi

ness

Se

rvic

e

Wire

less

Se

rvic

eM

obile

bas

e st

atio

n

xDS

L/P

OTS

/Wire

less

Acc

ess

over

10G

EPO

N

WD

M A

cces

sTr

ansp

ort

WD

M A

cces

sTr

ansp

ort

10G

iga

PON

In

tegr

ate

subs

crib

er

FTTx

/WiM

AX

solu

tion

to p

rovi

de

high

relia

bilit

y an

d ex

tend

reac

h.

WD

M a

cces

s tra

nspo

rt to

ext

end

reac

h an

d pr

ovid

e w

ider

ban

dwid

th.

Ｐag

e 13

OFC

2008

San

Die

go

Out

line

1.

Optical Acc

ess

Techn

olo

gy and market

2.

Next Genera

tio

n Acce

ss

1.Requirements for NGA

2.NGA Standardization Status

–Topics, Direction, Status, Feature

3.

R&Dactivit

ies

in NE

C g

roup

1.Key optical devices for NGA(10G, WD

M)

2.WDM Access Transport System

3.OWI Protection System

4.

Summary

Ｐag

e 14

OFC

2008

San

Die

go

Sta

ndar

d S

ched

ule

2007

2008

2009

2010

~▼ D

1.0

▼ 　D

2.0

▼ D3.

0▼ St

anda

rd

Bas

elin

e�P

MD

Spe

c.-P

ower

Bud

get

-Wav

elen

gth

-FEC

May

Last

Fe

atur

e

IEEE

802.

3av

10G

EPO

NC

FI M

ar. 0

6TF

Sep

. 06

July

Nov

.Ja

n.Se

p.▼ D

1.1Fe

b.N

ov.

Last

Tec

hnic

alC

hang

e

Exte

nsio

n, O

ptio

n �M

PCP

Exte

nsio

n�U

/S 1

G/1

0G C

oexi

sten

ce

FSAN

/ITU

-TN

GA

Dev

elop

men

t of F

SA

N N

G-P

ON

w

hite

pap

er�R

equi

rem

ents

for N

G-P

ON

1/2

�Spe

cific

atio

ns fo

r NG

-PO

N1

�Ini

tial s

tudi

es o

f NG

-PO

N2

Join

t Mee

ting

for

Har

mon

izat

ion

NG

-PO

N1

Stan

dard

izat

ion

in c

onju

nctio

n w

ith IT

U-T

Con

tinua

tion

to s

tudy

NG

-PO

N2

(tent

ativ

e)

WD

M-P

ON

XG-P

ON

Long

-rea

ch

Tech

nica

lD

iscu

ssio

n

Tech

nica

lD

iscu

ssio

n

Ｐag

e 15

OFC

2008

San

Die

go

10G

EP

ON

�O

bjec

tives

-•

Support subscribe

r a

cce

ss net

wor

ks

usi

ng

poi

nt

to mul

tip

oin

t

topologies on opt

ica

l f

iber

•PHY(s) to have a

BER

be

tter t

han

or

eq

ual

to

10

-12at the PHY

service interface

•Provide physical

lay

er

specif

ica

tio

ns:

–PHY for PON, 1

0 Gbps

downstream/1 Gbpsupstream, single SM

fibe

r–

PHY

for

PON,

10 Gbps

downstream/10 Gbps

upstream, single SM

fibe

r

•Define up to 3 op

tic

al

power

bud

get

s t

hat

su

ppo

rt spl

it

ratios of 1:16 an

d 1

:32

, and

dis

tan

ces

of

at

le

ast 10

an

d a

t

least 20 km.

PR

: 10G

/10G

PRX

:10G

/1G

Tabl

e: P

ower

Bud

get C

lass

es

Ｐag

e 16

OFC

2008

San

Die

go

Dow

nstre

am: W

DM

10G

EP

ON

�Fe

atur

es-

10G

/1G

ON

U1 Lo

ss b

udge

t = 2

9 dB

(PR

30/P

RX3

0)CO

10G

/10G

12

60

13

10

13

60

GE-

PO

N (

US

)

10

GE-

PO

N (

US)

12

60

12

80

13

60

GE-

PO

N (

DS

)V

ideo

14

50

15

00

15

50

16

00

λ1

48

01

50

0

15

74

15

80

(nm

)

16

00

PR

30 PR

10

PR

20

Ups

tream

: TD

MA

ON

U2

10

GE-

PO

N (

DS

)

1G/1

0GD

ual-r

ate

Rx Tx

Key

Dev

ice:

Hig

h-se

nsiti

vity

AP

D, H

igh-

Pow

er L

D

Coe

xist

ence

with

GE

PON

, RF-

vide

o

Tx:

>+4d

BmR

x:<-

28dB

m

Rx:

<-26

dBm

Tx:

>+2d

Bm

Wav

elen

gth

Allo

catio

n

Ｐag

e 17

OFC

2008

San

Die

go

Out

line

1.

Optical Acc

ess

Techn

olo

gy and market

2.

Next Genera

tio

n Acce

ss

1.Requirements for NGA

2.NGA Standardization Status

–Topics, Direction, Status, Feature

3.

R&Dactivit

ies

in NE

C g

roup

1.Key optical devices for NGA(10G WDM

)

2.WDM Access Transport System

3.OWI Protection System

4.

Summary

Ｐag

e 18

OFC

2008

San

Die

go

Key

Dev

ice

for 1

0GE

PO

N H

igh-

Pow

er T

rans

mitt

er

+4dB

m(M

odul

atio

n)

Hig

h-po

wer

(>+4

dBm

)10G

bps

oper

atio

n w

as c

onfir

med

.

1.3um AlGaInAsBH DFB-LD

–AlGaInAs

MQW

•High relaxatio

n

oscillation fr

equ

enc

y e

ven

at high temper

atu

re

–BH structure with

se

mi-

insulating curren

t b

loc

king

layer

•Redu

ce par

asitic capacitance

by Fe doped InPfor high-

spee

d　(>1

0GHz) operation

Ｐag

e 19

OFC

2008

San

Die

go

Key

Dev

ice

for 1

0GE

PO

N H

igh-

Per

form

ance

Rec

eive

r•

Two type of high-

performance APD have

developed.

–Mesa-type APD

•Simp

le Mes

a structure

is s

uita

ble

for mass

prod

ucti

on and low cost.

•Tole

rant

for

high-power.

•High

rel

iabi

lity.

–Waveguide APD

•Wave

guid

e st

ructure

real

izes

hig

h quantum

effi

cien

cy and high

sens

itiv

ity.

•WG str

uctu

re is

suit

able

for

surface

moun

ting

and

PLC.

A ba

ck-il

lum

inat

ed m

esa

APD

.H

igh

relia

bilit

y w

ith th

in m

ultip

licat

ion

and

two-

step

abs

orpt

ion

laye

r.

An a

sym

met

ric w

aveg

uide

APD

with

th

in S

AM s

truct

ure.

Hig

h in

put p

ower

oper

atio

n w

ith a

sym

met

ric s

truct

ure.

Freq

uenc

y R

espo

nse

Rec

eive

d Se

nsiti

vity

Rad

iatio

n m

ode

Ban

d S

truct

ure

*SA

M：

Sepa

rate

d ab

sorp

tion

and

mul

tiplic

atio

n st

ruct

ure

Mes

a In

AlAs

-AP

D

WG

InAl

As-A

PD

Inpu

t lig

ht

refle

ctio

np-

elec

trod

en-

elec

trod

e

AR

coa

t (Si

N)

n-In

PSu

b.

InAl

As

mul

iplic

atio

nla

yer

n-In

Pbu

ffer l

ayer

i-InG

aAs

abso

rptio

n la

yer

p-gr

aded

dop

ing

InG

aAs

abso

rptio

n la

yer

Fiel

d bu

ffer l

ayer

p-In

AlA

sca

p la

yer

Pass

ivat

ion

(SiN

)

n-In

Pbu

ffer l

ayer

Inpu

t lig

ht

refle

ctio

np-

elec

trod

en-

elec

trod

e

AR

coa

t (Si

N)

n-In

PSu

b.

InAl

As

mul

iplic

atio

nla

yer

n-In

Pbu

ffer l

ayer

i-InG

aAs

abso

rptio

n la

yer

p-gr

aded

dop

ing

InG

aAs

abso

rptio

n la

yer

Fiel

d bu

ffer l

ayer

p-In

AlA

sca

p la

yer

Pass

ivat

ion

(SiN

)

n-In

Pbu

ffer l

ayer

GB

:120

GH

zfm

ax: 1

1 G

Hz

Mul

tiplic

atio

n fa

ctor

(M)

3-dB down bandwidth (GHz)

110

100

110100

GB

:120

GH

zfm

ax: 1

1 G

Hz

Mul

tiplic

atio

n fa

ctor

(M)

3-dB down bandwidth (GHz)

110

100

110100

p-el

ectr

ode

i-InG

aAs

abso

rptio

n la

yer

InA

lAs

field

buf

fer l

ayer

InA

lAs

mul

tiple

laye

r S.

I.-In

Psu

bstr

ate

n-el

ectr

ode

AR

-coa

ting

Inpu

t lig

ht

Poly

-imid

e

p+-w

aveg

uide

n+-w

aveg

uide

p-el

ectr

ode

i-InG

aAs

abso

rptio

n la

yer

InA

lAs

field

buf

fer l

ayer

InA

lAs

mul

tiple

laye

r S.

I.-In

Psu

bstr

ate

n-el

ectr

ode

AR

-coa

ting

Inpu

t lig

ht

Poly

-imid

e

p+-w

aveg

uide

n+-w

aveg

uide

Ｐag

e 20

OFC

2008

San

Die

go

Col

orle

ss O

NU

Tech

nolo

gy fo

r WD

M-P

ON Dire

ctE

xter

nal

Dire

ctD

irect

/Ext

erna

lM

odul

atio

n

1.25

Gbp

s10

Gbp

s1.

25G

bps

10G

bps

Rat

e

ON

UO

LTO

NU

ON

ULo

catio

n of

US

lig

ht s

ourc

e

ON

U

conf

igur

atio

n

Wav

elen

gth-

seed

ing

Loop

-bac

kS

pect

rum

S

licin

gTu

nabl

eTe

chni

que

Wavelength Supply

Local Emission

Rx

TLD

WD

MR

x

BLS

WD

MR

x

Mod

.+A

mp.

WD

MR

x

RS

OA

TLD

: Tun

able

Las

er D

iode

, BLS

: Bro

adba

nd L

ight

Sou

rce,

RS

OA

: Ref

lect

ive

Sem

icon

duct

or

Opt

ical

Am

plifi

erS

ourc

e: J

.Kan

iet a

l., �N

ext G

ener

atio

n O

ptic

al A

cces

s N

etw

orks

: Pos

sibl

e D

irect

ions

an

d Te

chni

cal C

halle

nges

,�EC

OC

2006

, Th2

.1.2

Ｐag

e 21

OFC

2008

San

Die

go

Full

band

Tun

able

LD

SO

A

Dou

ble-

ring

reso

nato

r

TO h

eate

r(o

n th

e rin

g w

aveg

uide

)

AR

coa

ting

HR

coa

ting

160n

m

-50

-40

-30

-20

-10010

1460

1500

1540

1580

1620

1660

Wavelen

gth [nm]

Fiber coupled intensity [dBm]

S-b

and

C-b

and

L-ba

nd

04080120

160

200 19

9019

9419

9820

0220

06

Year

Tuning range [nm]

Ｐag

e 22

OFC

2008

San

Die

go

WD

M A

cces

s Tr

ansp

ort S

yste

m

CO

sid

eW

DM

repe

ater

CPE

sid

eW

DM

repe

ater

OLT

ON

U

ON

U

ON

U

Multiple wavelengths

over single fiber

Ext

end

reac

h (2

0km

)

�W

DM

acc

ess

trans

port

to e

xten

d re

ach

and

prov

ide

wid

er

band

wid

th�

The

syst

em m

ultip

lexe

s bu

rst o

ptic

al s

igna

l and

beh

aves

as

a re

peat

er a

s w

ell.

�Ef

fect

ive

use

of a

cces

s ne

twor

k fib

er b

y re

duci

ng n

umbe

r of f

iber

s�

Exte

nd o

ptic

al re

ach

beyo

nd 2

0km

with

usi

ng re

peat

ers

to 6

0km

�C

ompa

tible

in m

ixed

dep

loym

ent w

ith P

ON

, poi

nt-to

-poi

nt o

r oth

er

syst

ems

Ｐag

e 23

OFC

2008

San

Die

go

FTTx

/ WiM

AXP

rote

ctio

n�O

ptic

al a

cces

s w

ill b

ecom

e so

cial

infra

stru

ctur

e�H

igh

relia

bilit

y, a

t the

sam

e tim

e lo

w-c

ost i

s in

disp

ensa

ble

Ｐag

e 24

OFC

2008

San

Die

go

Sum

mar

y

•Requirements and trends for next

generation optical access technolog

ies

are presented.

1.

Requirements for NGA

2.

NGA Standardization Status

•R&D

activities in NEC are introduce

d.

1.

Key optical devices for NGA

2.

WDM Access Transport System

3.

OWI Protection System

•I believe that these technologies l

ead to

realizing 10GEPON-based integrated

optical access.

Ｐag

e 25

OFC

2008

San

Die

go

For　“

Nex

t”N

ext G

ener

atio

n Ac

cess

12

60

13

10

13

60

GE-

PO

N (

US

)

10

GE-

PO

N (

US)

12

60

12

80

13

60

GE-

PO

N (

DS

)V

ideo

14

50

15

00

15

50

16

00

λ

14

80

15

00

15

74

15

80

(nm

)

16

00

PR

30 PR

10

PR

20

10

GE-

PO

N (

DS

)

Wav

elen

gth

for

�N

ext�

NG

A

�New

tech

nolo

gies

(e.g

. OFD

M, O

CD

M) a

re e

xpec

ted

for

real

izin

g m

ore

high

er b

andw

idth

and

flex

ibili

ty.

�How

ever

, it i

s di

fficu

lt to

rem

ove

lega

cy s

yste

m�C

oexi

sten

ce a

rchi

tect

ure

with

lega

cy s

yste

m is

des

ired

�Coe

xist

ence

tech

nolo

gy w

ill b

e te

chni

cal i

ssue

s.

Ｐag

e 26

OFC

2008

San

Die

go

For H

ighe

r Cap

acity

•In order to enlarge bandwidth/capacity, we have

options, WDM, TDM and etc.

•Now 10Gbit/s continuous transmission technology is

mature, e.g. 10Gigabit Ethernet.

•TDM, especially 10Gbit/s PON technologies will be

available around 2010.

1st step: 10Gbit/s PON

2nd step: WDM PON

10G

bps/

λ x

ΝN

GA

FS

AN

, ITU

-T10

GE-

PON

IEEE

802.

3

STM

PON

2005

bit /

s

2006

G-P

ON

FSAN

, ITU

-T

100K1M10M

100M1G

600M

B-P

ON

Year

2000

2001

1998

FSA

N, I

TU-T

FSA

N, I

TU-T

2003

150M

B-P

ON

2002

2004

GE-

PON

IE

EE80

2.3

STM

PON

2007

2008

2009

2010

10G

TDM

100G

WDM

, etc

.