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)T IS MY PLEASURE TO ANNOUNCE THE LATESTEDITIONOF4#!$.EWS!SWELOOKFORWARDTO THE UPCOMING ! RELEASE OF3ENTAURUS IN THIS EDITION WE PRESENT TWOARTICLES PERTAINING TO THE SIMULATION OFADVANCED#-/3TECHNOLOGIES4HE FIRSTARTICLEPRESENTSACOMPLETE4#!$FLOW FOR TYPICAL HIGHPERFORMANCE NM#-/3TECHNOLOGIESSUCHASTHEONESBEINGREADIED FOR PRODUCTION AT MAJOR FOUNDRIESAND INTEGRATED DEVICE MANUFACTURERSAROUND THE WORLD 4HIS WORK INCORPORATESAPPROACHES TO SIMULATE INNOVATIVE PROCESSSTEPS SUCH AS LASER ANNEALING AND HIGHKGATEDIELECTRICSANECESSITYINTHECONTINUALCHALLENGE TO CONTAIN SHORTCHANNEL EFFECTSAND MAKES FULL USE OF THE CAPABILITIES IN3ENTAURUS FOR TREATING STRESSINDUCEDMOBILITY ENHANCEMENT 4HE AVAILABILITY OFTHEFLOWASA3ENTAURUS7ORKBENCHPROJECTMAKES ITAN IDEALSTARTINGPOINT FORPROCESSANDDEVICEENGINEERS TAKING THE FIRST STEPSIN USING 3ENTAURUS FOR ADVANCED #-/3SIMULATION ASWELL AS A REFERENCEWORK FORVETERAN4#!$ENGINEERS4HESECONDARTICLEADDRESSESTHEIMPORTANTTOPICOFGLOBAL STRESS IN#-/3PROCESSESWITHDUALSTRESSLINERSUSING&AMMOS48!SSUCHTHEARTICLEBREAKSNEWGROUNDINTHATITCONSIDERSAMUCH LARGERSIMULATIONDOMAINTHAN IS TYPICAL IN 4#!$ SIMULATIONS 4HESECAPABILITIES ENABLE THE SYSTEMATIC STUDY OFTHEIMPACTOFLAYOUTPARAMETERSONTRANSISTORSTRESSANAREAOFCONSIDERABLETECHNOLOGICALSIGNIFICANCE)TRUSTYOUWILLFINDTHELATESTEDITIONOF4#!$.EWS INFORMATIVE AND WE LOOK FORWARD TOYOURCOMMENTSANDSUGGESTIONS7ITHBESTREGARDS

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)NTRODUCTION4HE NM #-/3 TECHNOLOGY NODEINCORPORATESSEVERALADVANCEDPROCESSSTEPSTO ACHIEVE THE ONCURRENT AND OFFCURRENTTARGETSWHILECONTROLLINGSHORTCHANNELEFFECTS-ILLISECOND ANNEALING IS A KEY TECHNIQUE INULTRASHALLOW JUNCTION FORMATION WHILE STRESSENGINEERINGISBEINGAPPLIEDMOREEXTENSIVELYTHAN IN THE PREVIOUS NM NODE )N SOMEVARIANTS HIGHK DIELECTRICS AND METAL GATESHAVE BEEN INTEGRATED INTO THE PROCESS ASWELL4HISARTICLEDESCRIBESANMMODELINGREFERENCE FLOW THAT INCLUDES THESEADVANCEDPROCESS STEPS AND THAT RESULTS IN DEVICEPERFORMANCE INLINE WITH PUBLISHED DATASEE&IGURE4HISWORKISBASEDON4#!$3ENTAURUS6ERSION:

p 3TRESSMEMORIZATIONTECHNIQUE3-4p (ALOIMPLANTATIONp 3OURCEDRAIN3$IMPLANTATIONp NMSIDEWALLSPACERp ($$IMPLANTATIONp 3PIKEANNEALINGAT#p ,ASERANNEALINGAT#ANDMSp NMNICKELSILICIDEFORCONTACTSp $UALSTRESSLINER$3,4HE)MPORTANCEOF(IGHK'ATE$IELECTRICS4HE CURRENT TECHNOLOGY ROADMAP FOR ULTRASCALED -/3&%4S INDICATES THAT CONTINUEDDEEPSUBMICRON DEVICE SCALING REQUIRESGATE DIELECTRICS TO BE THINNED TO LESS THANkNMEQUIVALENTOXIDETHICKNESS%/45SING 3I/ AND 3I/. GATE DIELECTRICS FROMTHEPREVIOUSNODETOACHIEVETHISREQUIREMENTRESULTSINUNACCEPTABLYHIGHLEAKAGECURRENTSDUETOCARRIERTUNNELING)NTRODUCINGDIELECTRICMATERIALSWITHAHIGHERKKVALUEALLOWSTHE%/4TARGETTOBEACHIEVEDWITHINCREASEDPHYSICALTHICKNESSOFTHELAYERSANDTHEREFOREEXHIBITS LOWER LEAKAGECURRENTS THAN3I/OR3I/. GATE DIELECTRICS 4HE COMPOUNDS OFHAFNIUM (F ZIRCONIUM :R AND ALUMINUM!LHAVEBEENPROPOSEDASHIGHKDIELECTRICMATERIALSINADVANCEDFABRICATIONTECHNOLOGY(OWEVERHAFNIUMOXIDE (F/ANDHAFNIUMSILICATE (F3I/X HAVE EMERGED AS THEMOSTPROMISING HIGHKMATERIALS DUE TO THEIR HIGHDIELECTRICCONSTANTWIDEBANDGAPACCEPTABLEBAND OFFSET WITH RESPECT TO SILICON ANDPROCESS CONDITIONS COMPATIBLE WITH SILICONPROCESSFLOWINTEGRATION$ESPITE SOME REMAINING CHALLENGES WITHTHEETCHINGANDDEPOSITIONOFULTRATHINHIGHQUALITYSTOICHIOMETRICHIGHKDIELECTRICLAYERSWITHACCEPTABLE INTERFACEPROPERTIESANDLOWPROCESS INTERFERENCE THESE MATERIALS AREBEINGINCORPORATEDINTONM#-/3FLOWS,ASER!NNEALINGFOR5LTRASHALLOW*UNCTION&ORMATION4HE CONVENTIONAL METHOD FOR CREATING THEHIGHLYDOPEDREGIONSOFATRANSISTORCONSISTSOF ION IMPLANTATION FOLLOWEDBYRAPID THERMAL

ANNEALING 24! 4HIS TECHNIQUE HOWEVERCANNOT MEET THE SCALING REQUIREMENTSBEYOND SUBkNM#-/3 TECHNOLOGYWITHSIMULTANEOUSLYDECREASINGJUNCTIONDEPTHANDSHEET RESISTANCE !S AN ALTERNATIVE TO 24!LASERANNEALING,!ISBEINGUSEDFORDOPINGACTIVATION4HEMAINPROCESSCHALLENGESWITHJUNCTION SCALING ARE THE FORMATION OF ABRUPTAND LOW SHEETRESISTANCE JUNCTIONS WHILECOMPLETELYREMOVINGTHEIMPLANTDAMAGE5LTRASHORTTIMEACTIVATIONANNEALINGHASBEENINVESTIGATEDRECENTLYTOREDUCESHORTCHANNELEFFECTS FOR SUBMICRON DEVICES ;= SINCE ITCAN PRODUCE ABRUPT SHALLOW JUNCTIONS WITHLOW RESISTIVITY 4HE NEW ACTIVATION ANNEALTECHNOLOGYUSINGALASERORFLASHLAMPPROVIDESAN ULTRASHORT ANNEAL TIME ^MILLISECONDTO MINIMIZE DOPANT DIFFUSION AND HIGHTEMPERATURES APPROXIMATELY # TOMAXIMIZE DOPING ACTIVATION ;= (ERE THESIMULATION AND ANALYSIS OF THE TRANSIENTENHANCED DIFFUSION 4%$ OF BORON ANDARSENICFORSHALLOWCHANNELEXTENSIONJUNCTIONFORMATION THROUGH 24! AND SUBSEQUENT ,!PROCESSSTEPSAREUNDERTAKENUSING3ENTAURUS0ROCESS6ERSION:3TRESS%NGINEERING"EYOND THENMNODESTRESSENGINEERINGPLAYSANIMPORTANTROLEINENHANCINGTHEDEVICEPERFORMANCE#URRENTLY STRAIN ENGINEERING ISPERFORMED TYPICALLY THROUGH THE APPLICATIONOF LOCAL STRESSSOURCESSUCHAS$3,S3-4ANDEMBEDDED3I'EPOCKETS INSOURCEANDDRAIN REGIONSOF0-/3&%4S3INCESTRESS ISA TENSORAND LOCALSTRESSSOURCESCONTRIBUTETO NONUNIFORM STRESS FIELDS THE RESULTINGENHANCEMENT OF CARRIER MOBILITY BECOMESDIRECTION DEPENDENT !LONG THE CHANNELDIRECTIONUNIAXIALTENSILESTRESSIN.-/3ANDCOMPRESSIVESTRESSIN0-/3HAVESHOWNTOYIELDTHEHIGHESTCURRENTENHANCEMENTFORTHECHANNELDIRECTION7ITHTHEADVENTOFSTRAINEDSILICONNEWMODELSHAVE BEEN INCORPORATED INTO 3ENTAURUS TOACCOUNT FOR THE IMPACTOFSTRESSONPROCESSANDDEVICESIMULATION)NPARTICULAR3ENTAURUS$EVICE IMPLEMENTS SEVERAL STRESSINDUCEDBANDGAPANDMOBILITYMODELSINCLUDINGAHOLE

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4HIS ARTICLE DEMONSTRATES HOW GLOBAL STRESSANALYSIS AND LOCALLEVEL PROCESS SIMULATIONCANBECOMBINEDTOSTUDYTHELAYOUTIMPACTONMOBILITYENHANCEMENTWITHTHE$3,TECHNIQUE)NTHEEXAMPLETHEEFFECTOFLAYOUTPARAMETERSSUCHASPOLYPITCHANDINTERFACESPACINGONCHANNELSTRESSDISTRIBUTIONISANALYZED4HENTHESIMULATEDGLOBALSTRESSFIELDSAREUSEDTOESTIMATETHEMOBILITYCHANGES!T THE END OF THE EXAMPLE THE MULTILEVELAPPROACHISAPPLIEDTOILLUSTRATETHEINTEGRATIONOFGLOBALSTRESSFIELDSANDLOCALDOPANTPROFILESFOREFFICIENTPROCESSSIMULATIONANDACCURATEDEVICEMODELING

Tensile Etch Stop Layer (ESL)Compressive ESL

Active Si

ENy

SA

ENx

&IGURE4ESTSTRUCTURELAYOUT3!ISTHEDISTANCEFROMTHECENTEROFTHEPOLYTOTHEEDGEOFTHEACTIVEAREA%.XAND%.YARETHEDISTANCESBETWEENTHEACTIVEAREAANDTHEINTERFACEOFNITRIDELINERSINTHEXDIRECTIONANDYDIRECTIONRESPECTIVELY

-ODELINGOF,AYOUT)MPACTON#HANNEL3TRESSFROM'LOBAL3OURCESUSING&AMMOS48)TISWELLKNOWNTHAT-/3&%4CHANNELSTRESSISDEPENDENTONGEOMETRYSUCHASPOLYPITCHAND THEPROXIMITY TO STRESS LINER BOUNDARIES4HEFOLLOWINGSECTIONPRESENTSANANALYSISOFTHESEEFFECTSUSING&AMMOS48&IGURESHOWSTHELAYOUTOFATESTSTRUCTURE5SING THE 3YNOPSYS MASKEDITING TOOL)# 7ORK"ENCH LAYOUT PARAMETERS AREPARAMETERIZEDEASILYANDSIMULATIONSPLITSAREGENERATED TO INVESTIGATE GEOMETRY EFFECTS

'ATE

34) 34)

Pressure [Pa]4.0e+093.7e+053.5e+01

-7.8e+01-8.4e+05-9.0e+09

4#!$.EWS

%AST-IDDLEFIELD2OAD-OUNTAIN6IEW#!53!WWWSYNOPSYSCOM

3YNOPSYSANDTHE3YNOPSYSLOGOAREREGISTEREDTRADEMARKSOF3YNOPSYS)NC!LLOTHERPRODUCTSORSERVICENAMESMENTIONEDHEREINARETRADEMARKSOFTHEIRRESPECTIVEHOLDERSANDSHOULDBETREATEDASSUCH

3YNOPSYS)NC!LLRIGHTSRESERVED$'3

4HESETOOLSCANBEINTEGRATEDINTO3ENTAURUS7ORKBENCH 3ENTAURUS 7ORKBENCH6ISUALIZATIONISUSEDTOANALYZEINTEGRATEANDAVERAGETHESTRESS(ERE3!AND%.YAREINITIALLYFIXEDAND%.XIS VARIED TOSTUDY THE LATERALBOUNDARYEFFECT,"%3UBSEQUENTLY3!AND%.X ARE FIXEDAND %.Y IS VARIED TO STUDY THE TRANSVERSEBOUNDARYEFFECT4"%&IGURESANDSHOWANEXAMPLEOFA$MESHANDTHELATERALSTRESSDISTRIBUTION FOR ONE &AMMOS 48 SIMULATIONSPLITRESPECTIVELY4HE ,"% AND 4"% TRENDS ARE SHOWN IN&IGURESANDWHERETHESTRESSESHAVEBEENAVERAGEDUNDERTHECHANNEL )NTHISEXAMPLE3YYISMAINLYDEPENDENTON%.YWHILE3XXISDEPENDENTONBOTH%.XAND%.Y&IGURE SHOWS THAT &AMMOS 48 GIVES THESAMETRENDOFMOBILITYCHANGESFORTHIS0-/3TRANSISTORASIN;=WHERETHEPIEZORESISTANCEMODEL PROPOSED BY $ORDA ;= WAS USEDTO COMPUTE THE HOLE MOBILITY CHANGES )NADDITION THE EFFECT OF POLY PITCH ON LATERALCOMPRESSION UNDER THE-/3&%4 CHANNEL ISSIMULATED &IGURE SHOWS THAT AS THE POLYPITCHINCREASES3XXSATURATES3IMULATIONSWITHRECTANGULARSHAPEDSPACERSAREPERFORMEDSEE&IGURETOEVALUATETHEEFFECTOFGEOMETRYROUNDINGONCHANNELSTRESS4HE LATERAL STRESS DISTRIBUTIONS ARE SHOWN IN&IGURE &OR THE SAME PROCESS CONDITIONSTHE DIFFERENCE OF THE AVERAGE STRESS UNDERTHE CHANNEL BETWEEN &IGURE AND &IGUREIS LESS THAN BUT THE SIMULATION TIME ISREDUCED SHARPLY &OR MANY APPLICATIONS ASIMPLIFIED STRUCTURE CAN BE USED TO SPEED

-400-350-300-250-200-150-100-50

0

0 200 400 600 800ENx [nm]

Sxx

[MP

a]

ENy = 0 nmENy = 70 nmENy = 170 nm

&IGURE3XXISSTRONGLYDEPENDENTON%.XANDSLIGHTLYDEPENDENTON%.Y

UP SIMULATIONS AND TO AVOID THE DIFFICULTY OFBUILDINGCOMPLICATED$STRUCTURESANDMESHWITHOUTSACRIFICINGACCURACY4HEABOVEANALYSIS ILLUSTRATESTHEAPPLICATIONOF &AMMOS 48 IN FRONTEND STRESS SIMULATIONWHERE THE STRESS IS FROM GLOBAL SOURCES !MAJORADVANTAGEOFUSING&AMMOS48ISTHATITCANWORKWITH4#!$PROCESSSIMULATIONSTOCAPTUREALLOFTHENECESSARYSTRESSINFORMATIONFROMBACKENDSCALEFRONTENDLAYOUTSCALETOLOCALDEVICESCALE3UCHINFORMATIONFACILITATESACOMPLETEUNDERSTANDINGANDIMPLEMENTATIONOF$3,PROCESSINTEGRATION)NTEGRATING3TRESS$ISTRIBUTIONSFROM'LOBAL-ODELAND$OPANT0ROFILESFROM,OCAL-ODEL4HE TRADITIONAL 4#!$ PROCESS SIMULATOR3ENTAURUS 0ROCESS IS USED TO PERFORMDETAILED PROCESS SIMULATION TO FABRICATE ASINGLE TRANSISTOR 4HE PROCESS STEPS INCLUDEIMPLANTATION AND DIFFUSION THAT ARE ABSENTIN THE &AMMOS 48 SIMULATION$3, STRESSESSOLVEDFORIN&AMMOS48CANBEMERGEDWITHTHE DOPING PROFILES OF 3ENTAURUS 0ROCESSUSING THE MESHING ENGINE 3ENTAURUS -ESHAS SHOWN IN &IGURE 3TRESSES IN THESURROUNDING AREAS OUTSIDE THE DEVICE ACTIVEREGIONAREDISCARDEDINTHEFINALSINGLEDEVICESTRUCTURE 4HIS SUBSET STRUCTURE COMBINESTHEIMPURITYDISTRIBUTIONSINTHEACTIVEDEVICEAREAASSIMULATED IN3ENTAURUS0ROCESSANDTHE LAYOUTINFLUENCED $3, CHANNEL STRESSESPROVIDEDBY&AMMOS487HEN USING A 3ENTAURUS 0ROCESS STRUCTUREASASUBSETOFALARGER&AMMOS48STRUCTURESEVERAL FACTORS MUST BE CONSIDERED )F THE

SUBSET REGION ISCHOSENSO THATVARIATIONS INTHE LAYOUT DO NOT ALTER THE ACTIVE REGION ORINFLUENCETHEBOUNDARYONLYONE$3ENTAURUS0ROCESS SIMULATION IS REQUIRED (OWEVERDECREASINGTHEPOLYPITCHMAYCREATEIMPLANTSHADOWING AS THE FIRST DUMMY POLY LINEAPPROACHESTHEEDGEOFTHESIMULATIONREGIONFOR 3ENTAURUS 0ROCESS THEREBY REQUIRINGMULTIPLESIMULATIONS!NOTHER IMPORTANT CONSIDERATION IS THAT ONLYGEOMETRICETCHINGANDDEPOSITIONOPERATIONSCAN BE USED TO CREATE THE STRUCTURE 4HE3ENTAURUS0ROCESSSTEPSTHATINVOLVEMOVINGBOUNDARIESSUCHASOXIDATIONANDSILICIDATIONWOULD PRODUCE A DIFFERENT STRUCTURE THAN&AMMOS 48 IN THE ACTIVE REGION 4HEREFORESTRESSFROMTHELINEROXIDATIONANDSILICIDATIONIS EXCLUDED 4HE APPROACH ILLUSTRATED INTHIS ARTICLE IS APPLICABLE TO CASES WHEN THE$3, STRESSES ARE SIGNIFICANTLY STRONGER THANSTRESSES GENERATED BY PROCESS STEPS EARLIERINTHEFLOW!FTER THEDATA FROMTHESTRUCTURES ISMERGEDAND CONTACTS HAVE BEEN PLACED 3ENTAURUS$EVICECANBEUSEDTOSIMULATETHEIMPACTOFTHESTRESSONDEVICEPERFORMANCE3ENTAURUS$EVICE HAS A COMPREHENSIVE SET OF STRESSRELATED MODELS INCLUDING STRESSDEPENDENTMOBILITYANDBANDGAPNARROWING3UMMARY4HISARTICLEHASDEMONSTRATEDACOMPUTATIONALLYEFFICIENT MULTILEVEL MODELING APPROACH TOANALYZELAYOUTIMPACTONMOBILITYENHANCEMENTWITH$3,S4HEAPPROACHSEPARATESTHESTRESSANALYSISATTHEGLOBALLEVELFORTHE$3,PROCESSSTEPS FROM THE DOPANT PROFILE SIMULATION AT

&IGURE3NAPSHOTOFTHEMESHUSEDINTHISEXAMPLE

&IGURE4HELATERALSTRESS3XXDISTRIBUTIONUNDERTHECHANNEL4HECOMPRESSIVELATERALSTRESSINTHECHANNELISINDUCEDBYTHECOMPRESSIVENITRIDELAYER

Sxx_Element [MPa]2.0e+03

7.2e+01

2.5e+00

-2.5e+00

-7.2e+01

-2.0e+03

0100200300400500600700800

0 200 400 600 800ENy [nm]

Syy

[MPa

]

Syy (independent of ENx)

&IGURE3YYISINDEPENDENTOF%.XANDSOLELYDEPENDENTON%.Y

0

10

20

30

40

50

60

70

80

0 200 400 600 800EN[x,y] [nm]

Cha

nge

of M

obilit

y [%

] TBE, ENyLBE, ENx

&IGURE0-/3MOBILITYCHANGECOMPUTEDBYAPPLYINGTHEPIEZORESISTANCEMODELUSINGTHEAVERAGECHANNELSTRESS

405060708090

100110120130

0 500 1000 1500Poly Pitch [nm]

Sxx

[a.u

.]

ENx = ENy = 70 nm, 2.5 GPa2.0 GPa1.7 GPa

&IGURE4HEDEPENDENCEOF3XXONPOLYPITCH,ESSDEPENDENCEISOBSERVEDWHENTHEPOLYPITCHISLARGE

Sxx_Element [1]2.0e+03

7.2e+01

2.5e+00

-2.5e+00

-7.2e+01

-2.0e+03

&IGURE,ATERALSTRESS3XXDISTRIBUTIONOFAREPEATEDSIMULATIONOF&IGUREWITHRECTANGULARSPACERS

StressXX [Pa]0.0e+00

-6.0e+07

-1.2e+08

-1.8e+08

-2.4e+08

-3.0e+08

&IGURE&AMMOS48AND3ENTAURUS0ROCESSRESULTSOVERLAIDONTOTHESAMEGRIDINPREPARATIONFORDEVICESIMULATION

THE LOCAL DEVICE LEVEL USED IN EARLY DEVICEFABRICATIONSTEPS4HESTRESSANALYSISREQUIRESCONSIDERATION OF PROXIMATE EFFECTS THAT AREUBIQUITOUS IN THE LAYOUT AT THE GLOBAL LEVELWHILETHEDOPANTPROFILESIMULATIONISCONFINEDTO THE LOCAL GEOMETRY IN A SUBSTRUCTURE#OMBININGSTRESSFIELDSFROMAGLOBAL&AMMOS48SIMULATIONANDDOPANTPROFILESFROMALOCAL3ENTAURUS 0ROCESS SIMULATION ALLOWS THEEFFICIENT ACQUISITION OF STRESS INFORMATION FORACCURATEDEVICEMODELING

2EFERENCES;=0'RUDOWSKIETALg$AND$'EOMETRY%FFECTSIN5NIAXIALLY3TRAINED $UAL %TCH 3TOP ,AYER 3TRESSOR )NTEGRATIONSs IN3YMPOSIUMON6,3)4ECHNOLOGY(ONOLULU()53!PPk*UNE

;=%,EOBANDUNGETALg(IGH0ERFORMANCENM3/)4ECHNOLOGYWITH $UAL 3TRESS ,INER AND LOW CAPACITANCE 32!- CELLs IN3YMPOSIUM ON 6,3) 4ECHNOLOGY +YOTO *APAN PP k*UNE

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;=&AMMOS48MANUALS-OUNTAIN6IEW#ALIFORNIA3YNOPSYS)NC

;=' $ORDA g0IEZORESISTANCE IN1UANTIZED#ONDUCTION "ANDS IN3ILICON )NVERSION ,AYERSs *OURNAL OF !PPLIED 0HYSICS VOL NOPPk