negative-bias temperature instability (nbti) of gan mosfets slides.pdf · mis-hemt:...
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![Page 1: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/1.jpg)
Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs
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Alex Guo and Jesús A. del Alamo Microsystems Technology Laboratories (MTL)Massachusetts Institute of Technology (MIT)
Cambridge, MA, USA
Sponsor: MIT/MTL Gallium Nitride (GaN) Energy InitiativeUnited States National Defense Science & Engineering Graduate
Fellowship (NDSEG)
![Page 2: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/2.jpg)
Purpose
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To understand the physics of and to mitigate NBTI in GaN n-MOSFETs.
![Page 3: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/3.jpg)
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1. Motivation
2. Experimental setup
3. Three regimes of NBTI
4. Summary of contributions
Outline
![Page 4: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/4.jpg)
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1. Motivation
2. Experimental setup
3. Three regimes of NBTI
4. Summary of contributions
Outline
![Page 5: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/5.jpg)
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• Promising for a wide range of applications
30 V 600 V > 1200 V
GaN for power electronics
![Page 6: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/6.jpg)
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• Promising for a wide range of applications
30 V 600 V > 1200 V
GaN for power electronics
• Negative-Bias Temperature Instability (NBTI) is a major concern:• Operational instability• Long-term reliability
![Page 7: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/7.jpg)
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• Promising for a wide range of applications
30 V 600 V > 1200 V
GaN for power electronics
• Negative-Bias Temperature Instability (NBTI) is a major concern:• Operational instability• Long-term reliability
Challenge: mechanisms responsible for NBTI?
![Page 8: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/8.jpg)
• MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor
• Large gate swing, low gate leakage
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Passivation Passivation
GaN MIS-HEMT for high voltage applications
![Page 9: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/9.jpg)
• MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor
• Large gate swing, low gate leakage
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[Lagger, TED 2014]
• Presence of gate oxide brings new stability and reliability concerns not present in HEMTs
Passivation Passivation
GaN MIS-HEMT for high voltage applications
![Page 10: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/10.jpg)
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[Meneghini, EDL 2016]
Stress Recovery
VGS,stress = -10 V
NBTI of GaN MIS-HEMT
• Large ∆VT < 0 at moderate VGS,stress, slow partial recovery• Possible mechanism: trapping in multiple layers and interfaces
![Page 11: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/11.jpg)
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• Large ∆VT < 0 at moderate VGS,stress, slow partial recovery• Possible mechanism: trapping in multiple layers and interfaces
To better understand NBTI: Stress voltage dependence ; dynamics of S and gm,max ; simpler structure
Stress Recovery
VGS,stress = -10 V
NBTI of GaN MIS-HEMT
[Meneghini, EDL 2016]
![Page 12: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/12.jpg)
• Industrial prototype devices• SiO2/Al2O3 composite gate dielectric, EOT = 40 nm
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• Isolate oxide and oxide/GaN interface IRPS 2015: PBTI This work: physical mechanisms behind NBTI of GaN MOSFET
metal
oxideGaN channel
Simpler GaN MOSFET structure
![Page 13: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/13.jpg)
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1. Motivation
2. Experimental setup
3. Three regimes of NBTI
4. Summary of contributions
Outline
![Page 14: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/14.jpg)
Device screening and initialization
Recovery and characterization
Stress and characterization
• VT : VGS value when ID = 1 µA/mm• S : Extracted at ID = 0.1 µA/mm• gm,max: Extracted from IDS-VGS ramp• All at VDS = 0.1 V• First sample: ~ 1- 2 s after removal
of stress14
Thermal detrapping
I/V sweep
Increase stress voltage or temperature
Experiment flow and FOM definition
![Page 15: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/15.jpg)
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1. Motivation
2. Experimental setup
3. Three regimes of NBTI
4. Summary of contributions
Outline
![Page 16: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/16.jpg)
*TD: Thermal Detrapping
After TD
This work: GaN MOSFET
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VT shift overview
Three regimes:• Small negative ∆VT positive ∆VT negative ∆VT
• Permanent negative ∆VT after TD
![Page 17: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/17.jpg)
Three regimes:• Small negative ∆VT positive ∆VT negative ∆VT
• Permanent negative ∆VT after TD
*TD: Thermal Detrapping
Si HKMG p-MOSFET
After TD
This work: GaN MOSFET
[Zafar, TDMR 2005]
tHfO2 = 2.5 nm
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VT shift overview
![Page 18: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/18.jpg)
• Negative ΔVT ,|ΔVT| increases with tstress and |VGS,stress| • Minimal ∆S• Complete recovery
After TD
After TD
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Regime 1 (low-stress)Time evolution of ΔVT and ΔS at RT
![Page 19: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/19.jpg)
• Simple parallel VT shift that completely recovers
VGS,stress = -1 V, tstress = 10,000, RT
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Regime 1 (low-stress)ID-VGS and CG-VG characteristics
![Page 20: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/20.jpg)
• Rate of VT shift shows slight positive T dependence
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Regime 1 (low-stress)Temperature dependence
![Page 21: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/21.jpg)
• Power law with n = 0.28 to 0.4• Similar to PBTI observation [Guo, IRPS 2015]
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Regime 1 (low-stress)Modeling
![Page 22: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/22.jpg)
• Consistent with electron detrapping and retrapping from/to pre-existing oxide traps
Electron detrapping
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Electron retrapping
Regime 1 (low-stress)ΔVT mechanism
Initial
• Also seen in Si HKMG MOSFETs [Young, IRWS 2003] and Al2O3/InGaAsMOSFETs [Wrachien, EDL 2011]
![Page 23: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/23.jpg)
• ∆VT > 0• |VGS,stress|↑, tstress↑ ΔVT ↑, ΔS ↑, |Δgm,max| ↑• ∆VT , ∆S and |Δgm,max| mostly recoverable
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Regime 2 (mid-stress)tstress evolution of ΔVT , ΔS and Δgm,max at RT
![Page 24: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/24.jpg)
• All parameter shifts enhanced by T• At high T, recovery incomplete transition to regime 3
VGS,stress = -10 V
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Regime 2 (mid-stress)Temperature dependence
![Page 25: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/25.jpg)
• ΔVT and ΔS are linearly correlated throughout the entire experiment, and completely recover
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Regime 2 (mid-stress)∆VT and ∆S correlation
![Page 26: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/26.jpg)
• Temporary charge buildup around threshold after stress
VGS,stress = -20 V, tstress = 1,000 s, RT
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Temporary charge buildup
Regime 2 (mid-stress)C-V characteristics
![Page 27: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/27.jpg)
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[Jin, IEDM 2013]
Regime 2 (mid-stress)∆VT mechanism
![Page 28: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/28.jpg)
• High field at edges of gate Zener trapping in GaN substrate• Energy bands at surface of GaN channel ↑ Positive ΔVT, ΔS• Thermal process effective in electron detrapping
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[Jin, IEDM 2013]
x
y
Regime 2 (mid-stress)∆VT mechanism
![Page 29: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/29.jpg)
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Similar to regime 2
Additional permanent negative ΔVT
Regime 3 (high-stress)tstress evolution of ΔVT at RT
![Page 30: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/30.jpg)
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Regime 3 (high-stress)tstress evolution of ΔVT at RT
• tstress ↑, |VGS,stress| ↑ permanent |ΔVT|↑, ΔS ↑ and |Δgm,max|↑
![Page 31: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/31.jpg)
• T ↑ permanent |ΔVT|↑, ΔS ↑ and |Δgm,max|↑
VGS,stress = -70 V, tstress = 1 – 10,000 s
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Regime 3 (high-stress)Temperature dependence
![Page 32: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/32.jpg)
• Permanent ΔVT , ΔS and Δgm,max well correlated
Measurements at RT
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Regime 3 (high-stress)Correlation of permanent ΔVT , ΔS and Δgm,max
![Page 33: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/33.jpg)
• Prominent ΔVT , ΔS and Δgm,max correlate with a softening of C-V characteristics around threshold
VGS,stress = -70 V, tstress = 500 s, T = 125°C
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Regime 3 (high-stress)ID-VGS and CG-VG characteristics
![Page 34: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/34.jpg)
• Interface state generation under high gate stress
• Well-studied mechanism in Si MOS system [Schroder, JAP 2007]
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Regime 3 (high-stress)∆VT Mechanism
![Page 35: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/35.jpg)
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1. Motivation
2. Experimental setup
3. Three regimes of NBTI
4. Summary of contributions
Outline
![Page 36: Negative-Bias Temperature Instability (NBTI) of GaN MOSFETs slides.pdf · MIS-HEMT: Metal-Insulator-Semiconductor High Electron Mobility Transistor • Large gate swing, low gate](https://reader031.vdocuments.us/reader031/viewer/2022041018/5ecb7f909dc6301ad845ad89/html5/thumbnails/36.jpg)
Identified three degradation mechanisms:• Regime 1 (low-stress)
• Observation: small, recoverable negative ∆VT• Mechanism: electron detrapping from pre-existing oxide traps
• Regime 2 (mid-stress):• Observation: recoverable positive ∆VT and ∆S• Mechanism: Zener trapping in channel under edges of gate
• Regime 3 (high-stress):• Observation: negative, non-recoverable ∆VT , ∆S and ∆gm,max• Mechanism: interface state generation
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NBTI of GaN MOSFETs