mram junctions (mtjs) and 1 colin figgins magnetic...
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Magnetic Tunnel Junctions (MTJs) and
MRAM WANG LAB
Colin Figgins
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Motivation❏ In ~15 years, transistor will
become too small to remain reliable
❏ Low energy switching❏ Reduce heat runoff and
volatility (likelihood of electrons to tunnel through trans. gate)
http://acceleratingevolution.info/CS/wp-content/uploads/2012/06/moores.law_.technological.evolution.jpg
http://ixbtlabs.com/articles2/intel-65nm/
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Intro to the MTJ● Use spin of
electron rather than Charge
http://www.kylepounds.com/Education%20-%20Sizes%20of%20Things.html
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1976
Julliere’s Model
http://theo.physik.uni-konstanz.de/uli/files/magentic_tunneling_junction.pdf
TMR of 161.7% at Room Temperature
TMR of 231.4% at Room Temperature
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Nano-Fabrication 5
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Photolithography
http://www.prweb.com/releases/2007/02/prweb505378.htm
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Nano-sphere lithography
Use for samples smaller than 1um
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Argon Etching 8
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Thin Layer Deposition 9
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Final full pattern piece 10
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Probe Station 11
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Ni-MgO-CoFeB modelCoFeB allows for Voltage controlled magnetic properties
+500mV -500mVApplied Magnetic Field (Oe) Applied Magnetic Field (Oe)
Res
ista
nce
(Ohm
s)
Res
ista
nce
(Ohm
s)
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Future of MTJs - Magnetic Random Access Memory
Energy Efficient
Non Volatile
Long Term Memory
Resistant to Radiation and Power loss
http://www.southampton.ac.uk/~rpb/thesis/img280.png
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Summary
http://www.spacex.com/news/2014/07/14/falcon-9-launches-orbcomm-og2-satellites-orbit
http://ixbtlabs.com/articles2/intel-65nm/
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Acknowledgements ● Weigang Wang ● Hamid Almasi● Marcus Rosales● Srinivas Manne● Rebekah Cross● Amanda Halawani● Nikita Kirnosov
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Questions 16