mos rf products - eurocomp -june2012.pdf · beo substrate rf die compression force compression...

June 2012 MOS RF Overview 1

MOS RF Products


PPG is a World Leader in High Voltage RF MOSFETs, both Silicon

and Advanced Packaging, Focused on ISM Applications.

• Advanced Products • Higher Performance • Lower Cost

• Key Advantages

• Allows higher output impedance, closer to vacuum tube predecessors. • Circuit design is simpler, more cost effective, more efficient. • HV RF MOSFET systems have a much higher power density compared to the Low Voltage alternative.

MOSRF High Voltage MOSRF enabled early adopters to carve out leadership positions in the RF Industrial Scientific Medical “ISM” market space.

Thanks to SILICON &

PACKAGING


Markets and Applications

Band Width Class Freq, MHzIndustrial Plasma Industrial Glass (coating) Narrow C-E 2 - 27

LCD Panel (thin film deposition) Narrow C-E 2 - 27SemiCap (depositing and etching films) Narrow C-E 2 - 27Solar cell (thin film deposition) Narrow C-E 2 - 27

Other Broadband Power Amplifiers Broad AB, C 1 - 30CO2 Laser Narrow C-E 20 - 80Heating & Drying Narrow C-E 2 - 40

Medical Magnetic Resonant Imaging Narrow AB 20 - 130Laser Scalpel Narrow C-E 2 - 27

Communications FM Broadcast Broad C 88 - 108General Broad AB 1 - 30

Applications


Basic Product Categories ARF

• High Voltage RF MOSFETs • 500V to 1000V Breakdown, 110 to 300V applications • 100W to 1000W in Power Output • 2MHz to 140MHz Operating Frequencies • N and P channel transistors • Class-A, B, AB, C, D, E

DRF

• High Voltage RF Hybrids and Driver IC • 500V to 1000V Breakdown, 110V to 1000V applications • 1000W to 3000W in Power Output • 2MHz to 40MHz Operating Frequencies • Class-D and E Switch mode applications over 30 MHz

VRF

• Low Voltage RF MOSFETs • 50V to 270V Breakdown, Rugged • 50V applications - VRF family of 170V RF MOSFETs • 90V applications – VRF19x 270V RF MOSFET • 30W to 600W in Power Output • 2MHz to 300MHz Operating Frequencies • Class A, AB, B, C, E


MicrosemiDRF1300

MicrosemiARF 1500

MicrosemiDRF100

5600

5600

5600

5600

5600

5600

5600

5600

MicrosemiDRF1201

T1 T2 T3

T4

T4A

ARF15XX DRF12XX

ARF466FL

DRF1300 (PP)

DRF1400 (HB)

MicrosemiVRF 154 FL

T2B

VRF154 VRF157

MicrosemiDRF100

T3B

T3A

MicrosemiARF 475FL

ARF475FL

DRF100

T1A

ARF1510 ARF1511

MicrosemiARF1510

MicrosemiDRF1400

1 2 3 4 5 6 7 8 9 10 11 12 13 14

151617

MicrosemiARF300FL

T8

ARF300FL

ARF501

ARF501

T0-247

Legacy RF Packages At present we are developing Flangeless replacements for all of these package types

Package Types


Mounting

Mounting and lead form configurations can vary substantially and still provide good device compression to the heat sink and stress relief to the leads.

HEAT SINK

VRF-154FL

.125 BELLVILLE WASHER

COMPRESSION SCREW

SOURCE LEAD

GATE LEAD DRAIN LEAD

PCBPCB

HEAT SINK

BeO SUBSTRATE

RF Die

Compression Force

Compression Screw

Thrust / Bellville Washer

Device Lead

Compression Lid Ultem 2300

- The compression against the heat sink is via the package lid (red arrows), a 30% fiber glass loaded high strength plastic, Ultem 2300. - The BeO substrate is .040 thick and lapped flat to better than .001in/in.

See Application note on WEB and Video


SPICE Models

********** *SRC=ARF300;ARF300;MOSFETs N;Enh;500V *24.0A .250ohms PPG Microsemi RF MOSFET *SYM=POWMOSN * 04-24-09 Rev A GJK PPG Microsemi .SUBCKT ARF300 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U LD 10 11 2n RD 11 1 .250 LG 20 19 2n RG 19 2 .5 D1 5 1 DGD D2 5 2 DGD CGS 2 3 1.81n DSD 3 1 DSUB RS 29 3 2.25m LS 30 29 .9n .MODEL DMOS NMOS(LEVEL=3 VMAX=1.04Meg THETA=10.0m ETA=.50m VTO=4.0 KP=7.6) .MODEL DSUB D (IS=99.6n N=1.50 RS=10.4m BV=500 CJO=2.00n VJ=0.800 M=0.420 TT=366n) .MODEL DGD D (IS=100n N=1.5 RS=10m BV=500 CJO=709.5P M=.5 VJ=.700 TT=1n) .ENDS *****

Device Circuit Model

Circuit Model Text File

•We now have new RF SPICE Models for all Device types

• Listed on the Microsemi Web site in September

• This will allow better Engineering Support

• Improved rate of Design Wins

• Shorter Time to Market for our Customers

Most Engineers begin the design process with a SPICE Circuit Simulation on their computer. This is very often considered a necessary tool prior to building hardware. With Good SPICE models the Design Process is shortened. Our RF Device Design Wins have been slowed by our lack of RF SPICE Models.


RF Test and Sort

Going forward we are putting in place RF test capability for all of our VRF and ARF products to meet customer requirements for RF testing and matching

VRF2933 and VRF157FL


VRF Products


VRF Products §Family of “direct drop-in” replacements to M/A-Com and

ST

§ Penetrate existing HF, VHF and Low Frequency ISM legacy systems as a direct replacement alternative

§ Utilize same part number system as competitors with a VRF prefix

§ Capitalize on higher BVDSS rating (170V vs 125V) to provide improved ruggedness and reliability


VRF Products

Part Number

Voltage Power Out

PDCASE Topology Frequency Package

VRF141 75V 150W 300W Single 175MHz M174

VRF148A 170V 30W 115W Single 175MHz M113

VRF150 / E 170V 150W 300W Single 150MHz M174


VRF151G 170V 300W 500W Dual P-P 175MHz M208


VRF154FL 170V 600W 1350W Quad Parallel 30MHz T2

VRF157FL 170V 600W 1350W Quad Parallel 30MHz T2

VRF257FL 170V 600W 1350W Quad Parallel, Linear

30MHz T2

VRF191FL 270V 150W 300W Single 150MHz T11

VRF2933 170V 300W 648W Dual Parallel 150MHz M177

VRF2933x 170V 390W 815W Dual Parallel 130MHz M177

VRF154

T2

New Q4 2011

New Q4 2011


VRF154 / MRF154 Comparison • The VRF154 is a Flangeless version

of the MRF154.

• This design provides a significant cost reduction with no loss in performance.

MRF154

MRF154

RqJC = .130

RqJHS = .199

PD= 880W

The MRF154 has a copper tungsten flange which contributes to the total RqJC.

Two gold plated Kovar tabs to provide the Source Connection with no appreciable impact on contact resistance

VRF-154

VRF154FL

RqJC = .06

RqJHS = .193

PD= 908W

Nothing and next to nothing

New RF MOSFET Products

M177 T14

M208

VRF2933FL

VRF150FL VRF151FL VRF152FL VRF190FL

T9 M174

T12 VRF151GFL VRF152GFL

Me-Too’s Best Values in the Market

June 2012 13 MOS RF Overview

14

SOE Legacy Packaging

Copper Tungsten Flange

Refractory attached Gold Plated Kovar leads

The SOE style packages were developed about 45 years ago.

The new Flangeless Devices provide a 21st century materials and assembly technology to new power RF devices, yielding the same power handling capability at a reduced of the cost and enhanced Power Cycling capability.

June 2012 MOS RF Overview

June 2012

Matrix Print and Fire

The Print and Fire Matrix provides multiple substrates from one 2in. Square Plate which Reduces production Cost

The printed Bridge will allow PPG to build High Performance RF Packages with Reduced Cost and equal to or Better Performance than the legacy devices.

Cost Reduction Performance Improvement

The Printed Bridge increases RF gain >2dB compared to flangeless parts w/o bridge

MOS RF Overview

M174 Flangeless Package .005in. Full soft gold plated leads. Metal grain structure runs in the lead direction for malleability.

Parallelogram shaped BeO substrate for costing and mechanical.

Fiberglass Loaded Plastic resin lid, cost and strength. Ultem 2300 mounting

Mulity-Layer Glass and Metal for internal circuit construction.


17 17

T9 -- SOE Footprint-compatible

X-ray view through top


VRF2933FL T14 Drop-in Package Lead Height Same as Legacy Package

Leads Conform to Lid Provisions

Overall Outline Meets Drop-in Requirements

T12 LEAD LAUNCH RECESSED Lead height same as legacy package

Leads conform to lid provisions

Overall outline meets drop in requirement.


20

Thermal Comparison: Flanged vs Flangless packages

Tj @ 200W Pdiss

T9 o

n G

reas

e - W

orst

Gre

ase

- Bes

t

Stan

dard

SO

E, ty

p

T9, o

n in

dium

, typ

100

110

120

130

140

150

160

170

180

190

200

1

Tj @

Pd=

200W

, °C

Range due to thickness variation

Lower is better June 2012 MOS RF Overview

Application of Indium TIM for Flangeless Parts 1. Apply deionized water or isopropyl alcohol to a clean sponge or other absorbent material. Use enough fluid to sufficiently wet the sponge. 2. Remove flangeless package from shipping socket. 3. Wet the backside of the flangeless device by placing it firmly on the sponge. 4. Put the flangeless part inside its shipping socket on Indium TIM. 5. Capillary action will cause the Indium TIM to stick to the substrate of the device. With the Indium TIM applied to the bottom of the flangeless device, it can now be placed on the heat sink, ready for mounting.

1

2

3

4 5

INDIUM TIM UNPACKING INSTRUCTIONS


22

3 mil Indium foil

Pressure pattern left after mounting standard SOE package.


Reliability Test – Power Cycling

June 2012 23

MOS RF Overview


ARF Products

June 2012 MOS RF Overview 25 25

§ 300 W Amplifier x 8 = 2 kW out § Big Amplifiers are Complex § They require a lot of “Glue”

– Splitters – Combiners – Pieces parts

§ System Complexity drives cost

Typical High Power, 50V RF Amplifier

1 kW Amplifier X 2 = 2 kW out § One Splitter and Combiner § 10% Higher Efficiency § 350 W less DC power § 80% Fewer Parts § Lower Cost & Smaller Size

The ARF High Voltage Solution

The High Voltage Advantage

R P =

V2


High Voltage RF Mosfets - ARF

§ 1st high voltage RF MOSFETs – 1995 introduction

§ 1st RF MOSFETs in low cost packages § Common Source TO-247 Symmetric Pairs § Flangeless Packages in 2004

§ 500, 1000 & 1200V MOSFETs for VDD from 100 - 300V

§ Patented “Asymmetric Source” for ruggedness & Class A/B stability

§ Targeted at 1-140 MHz ISM & HF Communications Applications

§ CO2 Laser Drivers § Tube Drivers § Plasma deposition & etching equipment § MRI


Pout Freq VDD/BVDSS Package Class of Part (W) (MHz) (V) Style Operation Number Configuration 85 100 125V/500V TO-247CS C-E ARF449A/B Single, Symmetric Pairs 100 100 125V/500V TO-247CS A-E ARF463A/B Single, Symmetric Pairs 100 100 125V/500V TO-247CS A-E ARF463AP1/BP1 Single, Symmetric Pairs 115 65 250V/1000V TO-247CS C-E ARF446/447 Single, Symmetric Pairs 115 65 125V/500V TO-247CS C-E ARF448A/B Single, Symmetric Pairs 125 65 125V/500V TO-247CS A-E ARF460A/B Single, Symmetric Pairs 125 65 250V/1000V TO-247CS A-E ARF461A/B Single, Symmetric Pairs 125 65 300V/1200V TO-247CS A-E ARF465A/B Single, Symmetric Pairs 150 100 165V/500V 0.5" SOE A-E ARF520 Single 300 140 165V/500V Gemini A-E ARF473 2 die, Push Pull Config 300 45 250V/1000V TO-264 CS A-E ARF466A/B Single, Symmetric Pairs 350 45 250/1000V T3 A-E ARF466FL Single 350 140 165/500V T3 A-E ARF475FL 2 die in Push-p 750 40 125V/500V T1 A-E ARF1500 Single, 4 die in Parallel 750 40 250V/1000V T1 A-E ARF1501 Single, 4 die in Parallel 750 30 300V/1200V T1 A-E ARF1505 Single, 4 die in Parallel 750 40 400V/1000V T1 D ARF1510 Full Bridge 750 40 380V/500V T1 D ARF1511 Full Bridge 750 40 250V/1000V T2 A-E ARF1519 Single, 6 die in Parallel 350 45 250/1000V T3 A-E ARF466FL Single 350 140 165/500V T3 A-E ARF475FL 2 die in Push-pull 750 40 125V/500V T1 A-E ARF1500 Single, 4 die in Parallel 750 40 250V/1000V T1 A-E ARF1501 Single, 4 in Parallel 750 30 300V/1200V T1 A-E ARF1505 Single, 4 die in Parallel 750 40 400V/1000V T1 D ARF1510 Full Bridge 750 40 380V/500V T1 D ARF1511 Full Bridge 750 40 250V/1000V T2 A-E ARF1519 Single, 6 die in Parallel

ARF Product Family

MicrosemiARF 1500

T1

ARF15XX

T3

ARF466FL

MicrosemiDRF100ARF-1519

T3A

MicrosemiARF 475FL

ARF475FL

T2B

ARF1519

ARF501

ARFXXX

T0-247


ARF300 and ARF 301 App. Note

2.5KW

4.5KW

A Non- Symmetric Topology

B Symmetric Topology

ARF301

ARF300

ARF300

ARF300

Illustrated at the left are two circuit topologies. Both are a configuration know as a Half Bridge. There are Three Distinct Points of Interest. A is a Non-Symmetric configuration with 4.5 KW of output power and Very Difficult to Design and Maintain Stability. B is a Symmetric Configuration with only 2.5KW of output power and Very Easy to Design and Maintain Stability.

Design Engineers would prefer B the Symmetric Topology over A the Non- Symmetric, even with lower power output Microsemi PPG developed the first true High Power High Frequency P Channel MOSFET the ARF301 Now we need to develop a Application Note targeting our ISM Customers

See application note on WEB


DRF Products


MicrosemiDRF1300

MicrosemiDRF100

5600

5600

5600

5600

5600

5600

5600

5600

MicrosemiDRF1201

T2 T4 T4A T3B

MicrosemiDRF1400

1 2 3 4 5 6 7 8 9 10 11 12 13 14

151617

MicrosemiDRF1500

1 2 3 4 5 6 7 8 9 10 11 12 13 14

151617

T4A

In Development

DRF Products

Part Number Voltage Power Out PDCASE Topology Frequency Package

DRF1200 1000 1000 1600 Driver + MOSFET 27MHz T2




DRF1300 500 2000 2500 2 Driver + 2 MOSFET P-P 27MHz T4

DRF1301 1000 2000 2500 2 Driver + 2 MOSFET P-P 27MHz T4

DRF1400 500 3000 2500 2 Driver + 2 MOSFET HB 27MHz T4A

DRF1401 1000 TBD 2500 2 Driver + 2 MOSFET HB 27MHz T4A

DRF1500 500 TBD 2500 P Channel H Bridge 27MHz T4A


+VDD +VDDIN SGFN

DRAINSOURCEGND

SOURCEGND

SOURCEGND

SOURCEGND

5600

5600

5600

5600

5600

5600

5600

5600

MicrosemiDRF1201

1 2 3 4 5 6 7

10 9 8

5600

5600

5600

5600

5600

5600

1 2 3 4 5 6 7GND+VDD FN IN SG +VDDGND

DRAINSOURCEGND

SOURCEGND

10 9 8

T2 Case

BeO Substrate .040 thick

Drain Die attached Area Designed to accommodate die 6+

Low Inductive Loop, By-pass Capacitors to Driver IC

DRF12xx - Hybrids with Driver + MOSFET

The DRF1201 and DRF1202 each have 2 Power MOSFET die in parallel. These die are driven by one DRF100 die. The internal layout and capacitor by-passing are very similar to the DRF1200 as well as to all of the DRF Series. The lead connections and the package dimensions are identical to the DRF1200, however power output is significantly increased over the DRF1200.

• Integration of an RF MOSFET and a Driver with equal frequency capability.

• Unique combination provides the designer with an easy to implement solution.

• Flexible design. Can use a variety of 500V, 1000V or 1200V MOSFETs. Single or 2 in parallel output.

• Same outline (T2) as the VRF154FL and ARF1519.

• Allows for @TTL control signals.


DRF1300 Push-Pull Hybrid

1.000

1.750

2.000

0.125

0.750

0.300

.005 Thick Half Hard Copper, Gold Plate

MicrosemiDRF1300

Clear .125 4 Places

0.300

0.125

1.000

5600

5600

5600

5600

5600

5600

5600

5600

5600

5600

5600

5600

DRAIN A DRAIN BGND GND GND

GNDGNDGND +V +V +V +VFN FNIN INSG SG

T3 Case

1.00

2.00

- Includes two drivers with bypass capacitors and two 500V RF power MOSFETs in a push-pull configuration. - The two sections of the hybrid are completely independent allows for Pulse Width and Phase Modulation - To enhance switching performance, the driver ICs and the power MOSFETs are adjacent die selected. - Applications include Class-D RF generators or audio amplifiers.


DRF1400A/B Half-Bridge MOSFETs

-Half-Bridge pair of separate 500V RF MOSFETs with a driver for each. - For the high side switch, the driver is referenced to the Output. For the low side switch, the driver is referenced to the negative rail voltage. - The drivers are highly bypassed internally and are completely independent. - To enhance the performance, the driver ICs and the power MOSFETs are adjacent die selected. This gives the device very close switch timing. - The “A” & “B” versions are mirror images of each other to simplify board layout.

MicrosemiDRF1400

1 2 3 4 5 6 7 8 9 10 11 12 13 14

151617

5600pF

5600pF

5600pF

5600pF

5600pF

5600pF

5600pF

5600pF

5600pF

5600pF

5600pF

5600pF

DRAIN SOURCEOUTPUT

GD +VD FN IN SG GD+VD GS +VS FN IN SG GS+VS

This side referenced to the Output

This side referenced to the Source


DRF Reference Designs

RF Output

Output Network

DRF1200

+300V DC Input+5 and +15 DC Input

13.56MHz Clock

RF Output

DRF1300

Output Network

+200 VDC Input

+5 and +15V VDC Input

13.56 MHz Clock

Push-Pull Transformer

-200V DC Input or Short

+200V DC Input or Short

24V DC InputOutput Network

RF Output

15V DC-DC Inverter 1 of 2

DRF1400 Reference Design Provides the end user with a learning tool and a development platform, allowing minimal time to market for new products. Note: All stated power levels are into a 50W Flat Load. Reference Designs come with a detailed application note, including circuit schematics, BOM, PCB Layout, theory of operation and test data.

DRF1200 Class-E DRF1300 Class-D

DRF1400 HB Class-D


DRF Design Guide

1uF1uF1uF

1uF1uF1uF

Transparent Case Outline, Fiberglass Renforced Ultem2300

Low Inductive Loop By-Pass Capacitors

Low Inductance Driver Output Loop

Solder Dam

DRAINSOURCEGND

SOURCEGND

+V +VccSGINDPSOURCEGND

SOURCEGND

BeO Substrate .040in. Thick Low Inductance Output Loop

Leads Not To Scale

1 2 3 4 5 6 7

8910

C2

C1

R1

R2

R3

R4

J2

GND

+VDS

+15V GND

X

X

X

X

XX

o oo

oo oJ1

C13

C12

R6200W

200W

C11

C10M

ICR

OSEM

ID

RF1200

BNC

X

X

X

X

Area for User Circuit Development

Full Ground Plane PCB

Cutout for Device Vdd By-Pass

Capacitors 2 Places

X

Control Signal input

NO CONTROL SIGNAL or LV POWER TRACE TO THE RIGHT OF THIS LINE

o = One Plated Through Hole X = 5 Plated Through Holes

o o

o o

Jumper Connecting By-Pass Capacitors to Ground, 2 Places

4 Traces for user Circuit Development

1

2

3

4

o o o o

o o o

The DRF Family of Devices are all based on a MOSFET Driver IC and a Power MOSFET. The Driver IC was developed here and is manufactured by Xfab in Germany the Power MOSFET is produced here in the Bend FAB. The DRF Devices are a complex RF Hybrid. However this Hybrid provides the Customer with Kilowatt Power Outputs controlled by Microprocessor level inputs. This is a Great Advantage to the Design Engineer and the Customer, in the case of the CC4017 for Huettinger this could represent an annual revenue of $30M. This all comes at a price and that is a lot of Customer Support and Training. The DRF Design Guide is a very lengthy “How To” Application Note, and will be the text we will use for future Training Sessions. This Publication and Training will help other companies become excited about the solutions these devices bring to their organization. In addition, the price tag also includes completely new and different Manufacturing Process, Device Test System, and Quality Assurance.

DRF1200

DRF1200 Evaluation Board

mos rf products - eurocomp -june2012.pdf · beo substrate rf die compression force compression...

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