More-than-Moore with Integrated Silicon-Photonics

Vladimir Stojanović

Berkeley Wireless Rearch Center

UC Berkeley

1

• Milos Popović (Boulder/BU), Rajeev Ram, Jason Orcutt, Hanqing Li (MIT), Krste Asanović (UC Berkeley)

• Jeffrey Shainline, Christopher Batten, Ajay Joshi, Anatoly Khilo

• Mark Wade, Karan Mehta, Jie Sun, Josh Wang

• Chen Sun, Sen Lin, Sajjad Moazeni, Nandish Mehta, Michael Georgas, Benjamin Moss, Jonathan Leu

• Yong-Jin Kwon, Scott Beamer, Yunsup Lee, Andrew Waterman, Miquel Planas, Rimas Avizienis, Henry Cook, Huy Vo

• Roy Meade, Gurtej Sandhu and Micron Fab12 team (Zvi, Ofer, Daniel, Efi, Elad, …)

• DARPA, Micron, NSF, BWRC

• IBM Trusted Foundry, Global Foundries

Acknowledgments

Slide 2

More-than-Moore perspective

World’s first 60GHz CMOS AmplifierNiknejad & Brodersen

One of the first CMOS radiosRudell & Gray

1997

2004

2012

World’s first siPhotonic transmitter in 45nm SOIStojanovic, Popovic, Ram

Enhanced CMOS enables new applications

3

Inductors in IC processNguyen & Meyer1990

IBM/GF 12SOI (45nm) CMOS

IBM Cell IBM Power 7IBM Espresso

• 300mm wafer, commercial process• MOSIS and TAPO MPW access• Advanced process used in microprocessors• Photonic enhancement enables VLSI photonic

systems (no required process changes)

“Zero-Change” Photonics in 45nm

Monolithic photonics platform with fastest transistors

[C. Sun, JSSC 2016]

• Photonics for free! (No modification to the process)

• Closest proximity of electronics and photonics

• Single substrate removal post-processing step

• Each λ carries one bit of dataBandwidth Density achieved

through DWDMEnergy-efficiency achieved through

low-loss optical components and tight integration

Integrated photonic interconnects

Slide 6

Single channel link tradeoffs

10-dB

15-dB

Loss

5-fF 25-fFRx Cap7

512 Gb/s aggregate throughput

assuming 32nm CMOS

Georgas CICC 2011

• Laser energy increases with data-rate – Limited Rx sensitivity

– Modulation more expensive -> lower extinction ratio

• Tuning costs decrease with data-rate

• Moderate data rates most energy-efficient

Need to optimize carefully

8

DWDM link efficiency optimization

• Optimize for min energy-cost

• Bandwidth density dominated by circuit and photonics area (not coupler pitch)

Slide 9

Photonic-Interconnected DRAM (PIM)

Towards an Optical DRAM System

[ISCA 2010]

EOS22 Test ChipHigh Performance 45nm SOI

Micron D1L Test ChipPower-optimized0.22µm Bulk

70M transistors1000 optical devices

DARPA POEM

2M transistors1000s optical devices

6m

m

5m

m

Slide 10

11

World’s First Processor to Communicate with Light

Silicon-Photonic components integrated directly in the chip

C. Sun et al. Nature, Dec. 15.

DARPA POEM & PERFECT – Stojanović, Asanovićzero-change 45nm SOI

Processor Cores – 45nm SOI

• RISC-V open ISA

• Scalar-vector cores - Boot Linux

• 0.2-1.35GHz, 4-16 GFlops/W

Slide 12

0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20

15.8 12.8 10.6 8.7 7.1 5.7 4.6 3.7 3.1 2.6 2.1 1.6 200

16.7 14.0 11.6 9.6 7.9 6.4 5.3 4.3 3.6 3.0 2.4 1.9 250

14.9 12.4 10.3 8.6 7.0 5.8 4.8 4.0 3.3 2.8 2.2 300

15.6 13.0 10.9 9.1 7.5 6.2 5.2 4.3 3.7 3.0 2.4 350

13.6 11.3 9.6 7.9 6.6 5.5 4.7 3.9 3.3 2.6 400

14.1 11.8 9.9 8.3 6.9 5.8 4.9 4.2 3.5 2.8 450

12.2 10.3 8.6 7.2 6.1 5.2 4.4 3.7 3.0 500

12.5 10.5 8.8 7.5 6.3 5.4 4.5 3.8 3.1 550

10.8 9.1 7.7 6.5 5.6 4.7 4.0 3.3 600

11.0 9.3 7.9 6.7 5.8 4.9 4.2 3.3 650

11.2 9.5 8.1 6.9 5.9 5.0 4.3 3.5 700

11.4 9.7 8.3 7.1 6.1 5.2 4.4 3.6 750

9.8 8.4 7.2 6.2 5.3 4.5 3.6 800

8.6 7.4 6.4 5.4 4.6 3.7 850

8.7 7.5 6.5 5.5 4.7 3.8 900

8.8 7.6 6.6 5.6 4.8 3.9 950

7.3 6.6 5.7 4.8 4.0 1000

6.7 5.7 4.9 4.0 1050

5.8 5.0 4.1 1100

5.9 5.0 4.2 1150

5.1 4.2 1200

5.1 4.3 1250

4.2 1300

1350

Fre

que

ncy (M

Hz)

Vdd (V)

Not Operational

Gflops/W

[Lee ESSCIRC 2014]

470nm width

700nm width

Si Waveguides

Key Device Components

Slide 14

submitted to Nature – August 2015 – please keep confidential – funded in part by DARPA POEM program, Stojanovic, Asanovic, Popovic, Ram

Vertical couplers

Waveguide Taper

Diffraction GratingWaveguide

[Wade OIC 2015]

Key Device Components

Slide 15

SiGe from PMOS strain engineering used in Photodetectors

SiGe Photodetector

Waveguide

Waveguide Taper

[Orcutt 2013, Alloatti APL 2015]

Key Device Components

Slide 16

Integrated Heater

Drop Waveguide

Output Waveguide

Modulator Microring

Input Waveguide[Shainline OL 2013, Wade OFC 2014]

Transmitter

• Driven by a CMOS logic inverter (1.2Vpp)

• 5 Gb/s data rate at ~30fJ/b with >6dB extinction ratio, 3dB insertion loss

– Up to 12 Gb/s with 2-3dB extinction

InTransmit Site 50um

PRBS31

8:1

In/Out Grating

Couplers

VBIAS

Modulator Driver

Modulator

[Wade OFC 2014][Sun VLSI 2015]

Slide 17

Receiver

• Low parasitics from monolithic integration enable single-stage 5kΩ TIA receiver

• 10 Gb/s operation at 290 fJ/bit with 8.3uA sensitivity

VPD

φ

φ

Clock Buffers

OutA

OutB-

+Dummy TIA

TIA

5k Ω

5k Ω

Photo-

detector

-

+

ReceiverReceive Site 50um

BER Checker

2:8

Input Grating Coupler

[Georgas VLSI 2014]

Slide 18

5 Gb/s Chip-to-Chip Link

Rx Out A

Rx Out B

Chip 1

PRBS31

8:1

Thermal Tuner

PD Tx

Chip 2

BER Check

2:8

PD

RxOptical

Amplifier1189nm

Laser

3.8 dBm

-0.2 dBm

-3.2 dBm

-10.5 dBm

-14.5 dBm

-7.2 dBm

0.8 dBm

-5.9 dBm-3.2 dBm 9.65uA

2.04uA

Bit 1

Bit 0-9.9 dBm

Laser Power

Bit 1

Bit 0

Time [ps]

Decis

ion T

hre

shold

[uA

]

0 50 100 150 200

-2

0

2

1e-0011e-0021e-0031e-0041e-0051e-0061e-0071e-0081e-0091e-010

• “zero-change” monolithic competitive with state-of-the-art heterogeneous platforms

• 680 fJ/bit, 14mW optical power [Zheng PTL 2012**]

5 Gb/s Link Efficiency Summary

Slide 20

*Includes all closed-loop circuits + 0.5 nm tuning power **0.5nm tuning power only

662 fJ/bit for circuits

Thermal Tuning*275 fJ/bit (42%)

Receiver357 fJ/bit (54%)

Optical power: 3.6mW (13mWextrapolated without amplifier)

Modulator Driver30 fJ/bit (5%)

• Not using our best devices in the link– 1dB loss couplers [Wade, OIC 2015] (on the same chip instead of 4dB in the link)

– 5-10x better photodetector (0.1-0.2 A/W photodetector on the same chip)

• Expect to obtain >40x smaller laser power (65fJ/b optical)

5 Gb/s Link Efficiency Summary

Slide 21

662 fJ/bit for circuits

Thermal Tuning*275 fJ/bit (42%)

Receiver357 fJ/bit (54%)

Optical power: 3.6mW (13mWextrapolated without amplifier)

*Includes all closed-loop circuits + 0.5 nm tuning power

Modulator Driver30 fJ/bit (5%)

560 fJ/bit for laser – wall-plug**

**11.6% QD laser wall-plug efficiency

Electronic-Photonic Packaging

• Flip-chip onto FR4 PCB using C4 bumps

• Selective substrate removal of optical transceiver regions

Die-thinned chip with selective substrate removal

Processor

and SRAM

regions

WDM

transceiver

regions Epoxy

Slide 22

Optical Memory System Demo

• Chip 1 acts as processor, Chip 2 acts as memory• Custom memory controller, DRAM interface emulator

– Takes advantage of full duplex (as opposed to half-duplex) memory interface

• Video demonstration (thermal stress test)http://www.nature.com/nature/journal/v528/n7583/fig_tab/nature16454_SV1.html

Mem

ory

Co

ntr

olle

r

PD

50/50 Power Splitter

PD

Transmitter

Transmitter

Receiver

Receiver

Inte

rfac

e

RIS

C-V

Pro

cess

or

1M

B M

emo

ry A

rray

Chip (Processor Mode) Chip (Memory Mode)

Processor to memory link

Command + address + write data

Memory to processor link

read data

OpticalAmplifier

OpticalAmplifier

Laser

Single-Mode Fiber

1MB Memory Array (Inactive)

RISC-V Processor (Inactive)

Slide 23

Tx and Rx DWDM Transceiver Banks

Slide 24

-16

-14

-12

-10

-8

-6

-4

-2

0

1170 1172 1174 1176 1178 1180 1182 1184 1186 1188 1190

Tra

nsm

issi

on [

dB]

Wavelength [nm]

01

23

45 6

78

9 10

0

12 3 4

Tx

Rx

-12

-10

-8

-6

-4

-2

0

1170 1172 1174 1176 1178 1180 1182 1184 1186 1188 1190

Tra

nsm

issi

on [

dB]

Wavelength [nm]

0 1

2 34 5

6

78 9

100

9 10

Advanced lithography enables tight ring resonance control

11 x 8 Gbps Tx Demonstration

• 11 rings, each demonstrating 8 Gbps modulation– Independently testing one at a time – Potential for 88 Gb/s on a single fiber/waveguide– Each ring is auto-locked

Slice 8 Slice 9 Slice 10

Slice 4 Slice 5 Slice 6 Slice 7

Slice 0 Slice 1 Slice 2 Slice 3

>8 Gb/s limited by duty-cycle distortion of off-chip clock source

Slide Slide 19

[Sun JSSC 2016]

Going Faster – PAM2 and PAM4

Direct Digital-to-Optical Conversion!

[Moazeni et al, ISSCC 2017]

Chip floorplan

Transmitter eye diagrams

• Extinction ratio (ER): 3dB, Insertion loss (IL): 5.5dB

• PAM4 coding used: (0,5,10,15)

• 42fJ/b driver energy efficiency

Transmitter specs

29

• Leverage tight electronic-photonic integration to create new, more sensitive receiver structures

– Differential, DDR receiver

Improved Rx Topologies

[Nandish Mehta et al. ESSCIRC16]

Platform Performance Summary

Metric [Beamer ISCA 2010]Conservative Estimates

45nm SOI Platform

Bulk Photonics Platform*

Waveguide Loss 4 dB/cm 3.7 dB/cm 10.5 dB/cm

Vertical Coupler Loss 1 dB 1 dB 3 dB

Tx Data Rate 10 Gb/s 20 Gb/s 5 Gb/s

Tx Energy Per Bit 120 fJ/b 42 fJ/b 350 fJ/b

Rx Data Rate 10 Gb/s 12 Gb/s 5 Gb/s

Rx Energy Per Bit 80 fJ/b 297 fJ/b 1700 fJ/b

Rx Sensitivity 10 μA 8 μA 36 μA

PD Responsivity 0.9 A/W 0.44 A/W 0.2 A/W

Thermal Tuning Efficiency 1.6 μW/GHz 3.8 μW/GHz 10 μW/GHz

*considerably slower process than one assumed in [Beamer ISCA 2010]

• Comparison to a proposal for the processor-memory system we published 6 years ago

• Meeting/exceeding most system specsSlide 31

Array

Periphery

DDR3-1333 Technology2 Gb die cost ~90¢

8 mm

8m

m

DRAM processes heavily optimized for cost

Poly Si Photonics in Bulk CMOS

Key constraints:

Bulk Substrate

Low Cost

No SiGeMeade et al. OI 13, VLSI Tech Symp 14

Micron wafers

17

http://moss.micron.com/CORP/ca/brand/imagelibrary/test/Mobile LPDRAM.pnghttp://moss.micron.com/CORP/ca/brand/imagelibrary/test/Mobile LPDRAM.png

Memory: Bulk photonics integration

DTI adjacent to STI

[Meade et al. VLSI Tech Symp 14, Sun et al VLSI Ckts Symp 14]

Micron D1L Reticle

180nmBulk chip

First-ever link result with bulk CMOS photonics

WDM in bulk-photonics - Tx

• All slices BER checked at 5Gb/s

• 45Gb/s aggregate rate per waveguide34

WDM in bulk-photonics - Rx

• All receive slices functional and BER checked at 5Gb/s

• Single fiber more I/O BW than x16 DDR4 part

Conclusions

• Silicon-photonics – enabler of new capabilities

– Think “new on-chip inductor” or “new on-chip t-line”

• Potentially revolutionize many applications despite

slowdown in CMOS scaling

– VLSI compute and network infrastructure just a start

• Need process, device, circuit and system-level

understanding

36