moore’s law continues - duke university
TRANSCRIPT
Dr.
Rob
ert C
hau
Dr.
Ger
ald
Mar
cyk
Com
pone
nts
Res
earc
hLo
gic
Tec
hnol
ogy
Dev
elop
men
t1
Moo
re’s
Law
Con
tinu
esT
rans
isto
rs d
oubl
ing
ever
y 2
year
s to
war
d th
e bi
llion
-tra
nsis
tor
mic
ropr
oces
sor
Moo
re’s
Law
Con
tinu
esT
rans
isto
rs d
oubl
ing
ever
y 2
year
s to
war
d th
e bi
llion
-tra
nsis
tor
mic
ropr
oces
sor
1,00
0
10,0
00
100
,000
1,00
0,0
00
10,0
00,
00
0
100
,000
,000
1,00
0,0
00
,000
197
01
980
1990
2000
201
0
4004
8080
8086
8008
Pen
tiu
m®
Pro
cess
or
486™
DX
Pro
cess
or
386™
Pro
cess
or
286
Pen
tiu
m®
II P
roce
sso
rP
enti
um
® II
I Pro
cess
or
Pen
tiu
m®
4 P
roce
sso
r
Hea
din
g t
ow
ard
1 b
illio
n t
ran
sist
ors
in 2
007
4
Tra
nsi
sto
r P
hys
ical
Gat
e L
eng
th T
ren
d
(Lit
ho
gra
ph
y g
ener
atio
n >
LG
AT
E)
0.01
0.10
1.00
1990
1995
2000
2005
2010
Yea
r
Microns
Tec
hn
olo
gy
No
de
Tra
nsi
sto
rP
hys
ical
Gat
eL
eng
th
0.5µ µµµ
m0.
35µ µµµm
0.25
µ µµµm0.
18µ µµµm
0.13
µ µµµm90
nm
65n
m45
nm
30n
m
130n
m
70n
m50
nm
30n
m20
nm
15n
m
0.2µ µµµ
m
5
•P
ow
er c
on
sum
pti
on
sta
rtin
g t
o r
ise
exp
on
enti
ally
•D
rive
n b
y:−
Tra
nsi
sto
r I O
FF
Lea
kag
e−
Tra
nsi
sto
r G
ate
Lea
kag
e−
Hig
h O
per
atin
g V
olt
age
11
Pow
er D
ensi
ty E
xtra
pola
tion
Ho
t P
late
Ho
t P
late
Nu
clea
r R
eact
or
Nu
clea
r R
eact
or
Ro
cket
No
zzle
Ro
cket
No
zzle
Su
n’s
Su
rfac
eS
un
’s S
urf
ace
4004
4004 80
0880
0880
8080
8080
8580
85
8086
8086 28
628
638
638
648
648
6
Pen
tiu
mP
enti
um
®®
pro
cess
ors
pro
cess
ors
111010100
100
1,00
01,
000
10,0
0010
,000
’70
’70
’80
’80
’90
’90
’00
’00
’10
’10
Po
wer
Den
sity
Po
wer
Den
sity
(W/c
m2)
(W/c
m2) Gel
sing
er’s
Slid
e fr
om I
SSC
C 2
001
12
•C
on
tin
ue
Mo
ore
’s L
aw w
ith
ou
t E
xpo
nen
tial
in
crea
se in
Po
wer
Co
nsu
mp
tio
n•
Inte
l is
intr
od
uci
ng
tw
o im
po
rtan
t
tech
no
log
ies
at IE
DM
:D
eple
ted
su
bst
rate
tra
nsi
sto
rsH
igh
K g
ate
die
lect
ric
•O
ur
lon
g t
erm
ap
pro
ach
is:
Ter
aHer
tz T
ran
sist
ors
13
•S
cien
tifi
c N
ota
tio
n f
or
big
−K
ilo (
tho
usa
nd
)
−M
ega
( m
illio
n)
−G
iga
( b
illio
n
−T
era
( tr
illio
n)
•S
cien
tifi
c n
ota
tio
n f
or
smal
l−
Mill
i ( t
ho
usa
nd
th)
−M
icro
( m
illio
nth
)
−N
ano
( b
illio
nth
)
−P
ico
( t
rilli
on
th)
A T
eraH
ertz
tra
nsis
tor
will
run
at
1 tr
illio
n cy
cles
per
sec
ond
14
Ch
ann
elS
ou
rce
Dra
in
Gat
e O
xid
eG
ate
Wel
l
15
2.A
pp
lyin
g a
vo
ltag
e (V
T)
to t
he
gat
e “i
nve
rts”
th
e ch
ann
el r
egio
n,
crea
tin
g a
n e
lect
rica
l p
ath
b
etw
een
th
e so
urc
e an
d d
rain
VG
VG
3.A
pp
lyin
g a
vo
ltag
e to
th
e d
rain
p
ulls
cu
rren
t-ca
rrie
rs a
cro
ss
the
chan
nel
, cre
atin
g t
he
dri
ve
curr
ent
(ID).
VD
I D
1.T
ran
sist
or
in “
off
” st
ate
SD
G
SD
G
SD
G
16
•T
he
go
al is
to
cre
ate
smal
ler
and
fas
ter
tran
sist
ors
wh
ile r
etai
nin
g h
igh
leve
l of
per
form
ance
.
•30
% li
nea
r sh
rin
k y
ield
s ½
tra
nsi
sto
r ar
ea
Tra
nsi
sto
r co
un
t d
ou
ble
s ev
ery
two
yea
rs
30%
sh
rin
k
VG
VG
17
•G
ate
dela
yis
the
time
it ta
kes
for
curr
ent t
o tr
avel
from
the
sour
ce to
the
drai
n (a
cros
s th
e ch
anne
l).
•D
rive
curr
ent i
s th
e am
ount
of c
urre
nt th
at fl
ows
whe
n th
e tr
ansi
stor
is tu
rned
on.
•S
mal
ler
gate
del
ay a
nd la
rger
driv
e cu
rren
t tr
ansl
ates
into
FA
ST
ER
tran
sist
ors
and
circ
uits
. 21
Gat
e L
eaka
ge
Cu
rren
t:•
Thi
nner
gat
e ox
ides
pro
duce
fast
er tr
ansi
stor
s•
We
have
rea
ched
the
limit
of G
ate
Oxi
de (
SiO
2)sc
alin
g.•
30nm
tran
sist
or h
ad 0
.8nm
gat
e ox
ide
•T
hinn
er o
xide
s le
ak m
ore.
-
Gat
e ox
ide
can
get s
o th
in it
no
long
er a
cts
as a
goo
d in
sula
tor.
I Gat
e
So
urc
eD
rain
Gat
e O
xid
eG
ate
23
1.E
-06
1.E
-05
1.E
-04
1.E
-03
1.E
-02
1.E
-01
1.E
+00
1.E
+01
1.E
+02
1.E
+03 5
1015
2025
Ph
ysic
al T
ox
(Å)
Jox(A/cm²) @1V Inversion
SiO
2 G
ate
Lea
kag
e(f
rom
lite
ratu
re)
1.E
-06
1.E
-05
1.E
-04
1.E
-03
1.E
-02
1.E
-01
1.E
+00
1.E
+01
1.E
+02
1.E
+03 5
1015
2025
Ph
ysic
al T
ox
(Å)
Jox(A/cm²) @1V Inversion
1.E
-06
1.E
-05
1.E
-04
1.E
-03
1.E
-02
1.E
-01
1.E
+00
1.E
+01
1.E
+02
1.E
+03 5
1015
2025
Ph
ysic
al T
ox
(Å)
Jox(A/cm²) @1V Inversion
SiO
2 G
ate
Lea
kag
e(f
rom
lite
ratu
re)
24
Off
-sta
te (
Su
b-t
hre
sho
ld)
leak
age:
•Id
eally
, cur
rent
onl
y flo
ws
acro
ss th
e ch
anne
l (di
rect
ly b
enea
thth
e ga
te)
from
sou
rce
to
drai
n w
hen
the
tran
sist
or is
turn
ed o
n.•
If cu
rren
t flo
ws
unde
r th
e ch
anne
l whe
n th
e tr
ansi
stor
is tu
rned
off,
it is
cal
led
Off-
stat
e (o
r S
ub-t
hres
hold
) le
akag
e.•
Sub
-thr
esho
ld le
akag
e co
nsum
es p
ower
in th
e st
andb
y or
off
stat
e.•
A le
aky
devi
ce r
equi
res
a hi
gher
ope
ratin
g vo
ltage
I Off
So
urc
eD
rain
Gat
e O
xid
eG
ate
I Su
bsu
rfac
e
25
•D
eple
ted
Sub
stra
te T
rans
isto
r (D
ST
)W
ith R
aise
d so
urce
and
dra
in•
Hig
h-K
gat
e di
elec
tric
s•
Low
vol
tage
ope
ratio
n
28
Hig
h K
Gat
e D
iele
ctri
c
Hig
h K
die
lect
ric
•N
ew m
ater
ial r
epla
ces
SiO
2•
Thi
cker
phy
sica
l film
but
sam
e ca
paci
tanc
e•
10,0
00x
low
er g
ate
leak
age
curr
ent f
or s
ame
capa
cita
nce
Gat
e
So
urc
eD
rain
29
1E-8
1E-7
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E+
0
1E+
1 0.50
1.00
1.50
2.00
2.50
3.00
3.50
Co
x ( µ µµµ
F/c
m2 )
JOX @1V (A/cm 2)
SiO
2 Al2
O3
HfO
2
ZrO
2T
a2O
5
TiO
2
Alte
rnat
ive
Gat
e D
iele
ctric
s to
Red
uce
Gat
e Le
akag
e
31
Ben
efit
s•
No
leak
age
path
thro
ugh
subs
trat
e•
Low
est j
unct
ion
capa
cita
nce
•Le
ss v
olta
ge r
equi
red
to tu
rn o
n tr
ansi
stor
•N
o flo
atin
g bo
dy e
ffect
So
urc
eD
rain
Gat
e
Oxi
de
Neg
ativ
e•
Hig
h re
sist
ance
in S
ourc
e/D
rain
s
I Off
32
Ult
ra T
hin
SO
I plu
sE
pit
axy
Gro
wn
So
urc
e D
rain
•D
ecre
ases
res
ista
nce
•H
ighe
r dr
ive
curr
ent
•N
o in
crea
se in
junc
tion
capa
cita
nce
Oxi
de
Gat
e
Rex
tR
ext
Ori
gin
al
S/D
th
ickn
ess
New
S/D
th
ickn
ess
33
•T
ran
sist
or
Cu
rren
t cr
eate
s ch
arg
e b
elo
w
chan
nel
•C
har
ge
colle
cts
cau
sin
g v
olt
age
on
si
lico
n b
od
y to
ris
e o
r ‘f
loat
’•
Tra
nsi
sto
r V
t d
epen
ds
on
pre
vio
us
stat
e
So
urc
eD
rain
Gat
e
Oxi
de
+ +
+ +
+ +
+ +
+ +
38
•S
ilico
n c
han
nel
is f
ully
dep
lete
d d
uri
ng
o
per
atio
n o
f D
ST
tra
nsi
sto
rs−
No
ch
ance
fo
r ch
arg
e b
uild
up
•N
o d
esig
n c
han
ges
req
uir
ed f
or
DS
T!
Oxi
de
Sour
ceD
rain
39
1.8V
1.5V
1.3V
1.1V
0.85
V 0.7V
0.6V
2.5V
DST
BU
LK
CM
OS
41
Bul
kP
D S
OI
DS
T
Si o
n O
xide
Lay
erN
A~1
00nm
<30
nm
Rai
sed
sour
ce-d
rain
No
No
Yes
•Ju
nctio
n ca
paci
tanc
eLo
wLo
wer
� ���Lo
wes
t
•O
ff st
ate
leak
age
Low
Low
er� ���
Low
est
•S
oft e
rror
rat
eLo
wLo
wer
� ���Lo
wes
t
•U
ndes
ired
float
ing
body
No
Yes
� ���N
o
•O
pera
ting
volta
ge1.
0x1.
0x� ���
0.8x
•G
ate
dela
y1.
0x0.
9x� ���
0.7x
42
•E
limin
ates
su
bsu
rfac
e le
akag
e•
So
lves
hig
h r
esis
tan
ce•
Min
imiz
es g
ate
leak
age
•E
limin
ates
flo
atin
g b
od
y ef
fect
•M
inim
izes
so
ft e
rro
r ra
tes
•50
% lo
wer
jun
ctio
n c
apac
itan
ce t
hat
PD
SO
I
Rai
sed
S/D
Fully
Dep
lete
d C
hann
el
Hig
h K
gat
e
43
We
hav
e d
efin
ed a
new
tra
nsi
sto
r ar
chit
ectu
re•
Ter
aher
tz o
pera
tion
•Lo
w p
ower
con
sum
ptio
n•
Sca
labl
e be
yond
65n
m te
chno
logy
nod
e
All
of
the
key
elem
ents
hav
e b
een
dem
on
stra
ted
•N
ew tr
ansi
stor
str
uctu
re-
DS
T w
ith r
aise
d so
urce
dra
in
•H
igh
k g
ate
diel
ectr
ic•
30nm
, 20n
m, &
15n
m C
MO
S g
ate
leng
th•
Ter
aher
tz o
pera
tion
at 0
.75V
44
•In
tel’s
mo
st a
dva
nce
d d
evel
op
men
t a
nd
m
anu
fact
uri
ng
cap
abili
ty is
on
300
mm
waf
ers
–A
dvan
ced
lith
ogra
phy
–H
igh
K d
iele
ctric
s–
Rai
sed
sour
ce-d
rain
s–
Dep
lete
d S
ubst
rate
Tra
nsis
tors
•W
e be
lieve
that
Ter
aHer
tz tr
ansi
stor
arc
hite
ctur
e w
ill
beco
me
the
clea
r ch
oice
for
the
seco
nd h
alf o
f the
dec
ade.
45