modeling interfaces and surfaces using density functional
TRANSCRIPT
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Modeling interfaces and surfaces using density functional theory and
Non-Equilibrium Green's Functions
Umberto Martinez Pozzoni, PhD
Ruđer Bošković Institute, 07/03/2017
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7/3/2017Rudjer Boskovic Institute – Zagreb, Croatia 2
QuantumWise – company background
o Market leader in atomic-scale
modeling software for the
semiconductor industry
o Growing usage in the materials
and chemical industry
o More than 300 users worldwide
o Rapidly expanding number of
academic and industrial users
o Founded in 2008 (but goes back to 2003)
o Specialists in simulation software for atomic-scale
modeling
o 35 FTEs; majority has a PhD (+3-5/year)
o Headquarter in Copenhagen, Denmark
o Sales reps in USA, Singapore, Japan
o Resellers in India, China, Taiwan, Korea, …
o Profitable with 25% growth rate – no external capital
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Outline
• Modeling metal-semiconductor interfaces using Atomistix ToolKit (ATK)
1) Description of the interface using the DFT+NEGF method
2) Semiconductor band-gap using MGGA xc-functional
3) Semiconductor effective doping
• Results: Ag(100)/Si(100) interface
1) Validation of the activation energy model
2) I-V analysis based on the electronic properties of the interface
• One-probe surface configuration
1) Si(100) surface
2) Band alignment in semiconductor heterostructure, Si film on Ge(100)
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Motivation
Metal-semiconductor interface
Sze, Ng Physics of Semiconductor Interfaces 3rd ed. Wiley 2007
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Motivation
Metal-semiconductor interface – Key aspects
Shottky barrier
Doping
Depletion region
Finite bias
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Motivation
Shottky barrier
Doping
Depletion region
Finite bias
● Interface model is much smaller than the depletion region● No doping ● No bias● Very indirect comparison to experimental measurements
Metal-semiconductor interface
Traditional modeling – finite size slab
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Motivation
Metal-semiconductor interface
Two-probe configuration using Atomistix ToolKit (ATK)
Shottky barrier
Doping
Depletion region
Finite bias
1) Description of the interface using the DFT+NEGF method 2) Semiconductor band-gap using MGGA xc-functional 3) Semiconductor effective doping
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1) Description of the interface using the DFT+NEGF method
Brandbyge et al. Phys. Rev. B 65, 165401 (2002)
Central region Right electron reservoir
Left electron reservoir
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2) Semiconductor band-gap using MGGA xc-functional
Egap(opt-c)=1.17 eV
c = adjustable enhancement parameterTran, Blaha Phys. Rev. Lett.102, 226401 (2009)
Egap(LDA)=0.44 eV
LDA
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3) Semiconductor effective doping
Right electron reservoir Central region
Stradi et al. PRB 93, 155302 (2016)
Unperturbed atomic densities + compensation charge bound the atomic cores (+Δρcompensation)
Advantages:1- not depending on the precise atomistic details of the doping impurities2- completely independent of the size and exact geometry of the system
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1) Validation of the activation energy model
2) I-V analysis based on the electronic properties of the interface
Loca
l den
sity
of s
tate
s
Har
tree
pot
entia
l
nd = 1018 cm-3
Results: Ag(100)/Si(100) interface
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Current-Voltage characteristics and ideality factor
nd = 1018 cm-3 : Nearly ideal Schottky diode
n=1.09
According to thermionic emission theory
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n=1.09
nd = 1018 cm-3
nd = 1018 cm-3 : Nearly ideal Schottky diode
n=1.86
nd = 1019 cm-3
nd = 1019 cm-3 : Not ideal Schottky diode
Current-Voltage characteristics and ideality factor
According to thermionic emission theory
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Activation Energy method
Experimental procedure to extract the Schottky barrier height from IV curves
Small constant biasT around room temperatureA* and фAE are constant
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0.02
0.5
RT
Activation Energy curves and Schottky barrier height
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The measured Schottky barrier depends on:
1) Applied source-drain bias
2) Semiconductor doping density
+30%
+325%
nd = 1018 cm-3
nd = 1019 cm-3
Activation Energy curves and Schottky barrier height
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Electronic structure of the interface
Loca
l den
sity
of s
tate
s
Har
tree
pot
entia
l
nd = 1018 cm-3
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Analysis of the spectral current
0.02 V
E-
Thermionic
Tunnelling
Hartree potentialHartree potential
Local density of states
+
nd = 1018 cm-3
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Analysis of the spectral current
nd = 1018 cm-3
Spectral current
Thermionic
Thermionic + Tunnelling
0.02 V
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nd = 1018 cm-3
Thermionic emission
>>Tunnelling
0.2 V
0.02 V
E(Imax)
Analysis of the spectral current
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Tunnelling >>
Thermionic emission
nd = 1018 cm-3
Thermionic emission
>>Tunnelling
nd = 1019 cm-3
0.02 V
0.2 V
0.02 V
0.2 V
E(Imax)
Analysis of the spectral current
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Conclusions
• We have implemented in ATK a general atomistic approach based on DFT+NEGF for
simulating metal-semiconductor interfaces
• This approach:
o includes all the necessary ingredients to describe realistic
metal-semicondutor interfaces
o allows for a direct comparison between theory and experiment as it can
simulate I-V characteristics
o provides an alternative to analytical methods to evaluate the properties of
metal-semiconductor interfaces
o is a better alternative to finite-size models to describe the interface between
metals and doped semiconductors PHYSICAL REVIEW B 93, 155302 (2016)
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One-probe surface configuration
• The ideal model for a surface is periodic in 2 directions, but semi-infinite in the third:
• Standard DFT software packages (VASP, QuantumEspresso, etc) provide only the following approximation, called the slab model:
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Surface configuration using Green's function methods (One probe)
• QuantumWise is introducing an alternative computational approach for properly describing surfaces
• Goal: Calculate the surface properties of materials with more systematic convergence and effort (order of magnitude) than the slab approach
• Methodology: numerical contour integration of the surface Green’s functions, coupled to DFT
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Silicon (100) electronic structure – preliminary results
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Band alignment in semiconductor heterostructure, Si film on Ge(111) – preliminary results
~1.33 eV
~0.8 eV
~0.61 eV
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Band alignment in semiconductor heterostructure, Si film on Ge(111) – preliminary results
~1.33 eV
~0.8 eV
~0.61 eV1) Band bending of Ge conduction band is clearly seen.
2)Band gap of Ge substrate increases near the interface.
3)There exists a strong penetration of Ge valence states into the Si film within the Si film band gap.
One probe surface calculations combined with Projected LDOS analysis seems to be an insightful approach for studying the band
alignment.
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Thank You!
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Activation Energy curves and Schottky barrier height
0.02 RT
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Activation Energy curves and Schottky barrier height
Slope
0.02 RT
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0.02
0.5
RT
Activation Energy curves and Schottky barrier height
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+30%
0.02
0.5
RT
Activation Energy curves and Schottky barrier height
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Comparison of the two-probe with the finite-size model
Potential of the interface model used to align the electronic bands
• Band diagrams using a finite-size model
of the interface
Two-probe model(DFT+NEGF)
Finite-size model(DFT)
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Comparison of the two-probe with the finite-size model
nd = 1018 cm-3
nd = 1019 cm-3
nd = 1020 cm-3
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Comparison of the two-probe with the finite-size model
nd = 1018 cm-3
nd = 1019 cm-3
nd = 1020 cm-3
Model Time/SCF step [s]
Two-probe 46.6
Slab (short) 47.1
Slab (long) 338.6