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MIMOMEMS 11MIMOMEMS 11THTH OCTOBER 2009OCTOBER 2009 SINAIA, ROMANIASINAIA, ROMANIA
Microelectronics Research Group (MRG)Microelectronics Research Group (MRG)
GiorgosGiorgos KonstantinidisKonstantinidisMicroelectronics Research Group (MRG)Microelectronics Research Group (MRG)
Institute of Electronic Structure &Lasers (IESL)Institute of Electronic Structure &Lasers (IESL)
Foundation for Research & Technology Hellas (FORTH)Foundation for Research & Technology Hellas (FORTH)
MIMOMEMS 11MIMOMEMS 11THTH OCTOBER 2009OCTOBER 2009 SINAIA, ROMANIASINAIA, ROMANIA
INSTITUTE OF ELECTRONICINSTITUTE OF ELECTRONIC
STRUCTURE AND LASERSTRUCTURE AND LASER
( I E S L )
M a t t e r a n d L i g h t !
MIMOMEMS 11MIMOMEMS 11THTH OCTOBER 2009OCTOBER 2009 SINAIA, ROMANIASINAIA, ROMANIA
IESL/FORTH IESL/FORTH
LASER AND APPLICATIONS DIVISIONAtomic Physics (Strong field effects, Quantum gases)Molecular Physics, Chemical DynamicsLaser Interactions with Materials and ApplicationsBiomedical Applications
MATERIALS and STRUCTURESMaterials Science (Magnetic, Photonic and Electronic Materials)Microelectronics (Compound Semiconductors)Polymer Science (Soft matter Physics)
THEORETICAL AND COMPUTATIONAL PHYSICS AND CHEMISTRY DIVISION
Theoretical Physics and ChemistryEnvironmental Studies
MIMOMEMS 11MIMOMEMS 11THTH OCTOBER 2009OCTOBER 2009 SINAIA, ROMANIASINAIA, ROMANIA
--Started in 1985 by A. Christou, focused on III-arsenide microwaves-By 1990 a full laboratory with material and fabrication capabilities
-A joint effort between IESL & University of Crete-Since 1993 moved towards wide band gap semiconductors (SiC, III-nitrides)
2008-Group of 40 persons, including graduate students
- Molecular beam epitaxy of compound semiconductors (III-nitrides, III-arsenides, SiC)
thin films, heterojunctions, quantum wells, quantum dots
- Device processing and characterization:microelectronics (HEMTs, MMICs, RF-MEMS, RTDs, sensors…)optoelectronics (LDs, LEDs, detectors, solar cells,QDs…)
-Targeted areas of applications: information society and nanotechnology, space, security, biotechnology
MRG at a glanceMRG at a glance
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MIMOMEMS 11MIMOMEMS 11THTH OCTOBER 2009OCTOBER 2009 SINAIA, ROMANIASINAIA, ROMANIA
““VerticalVertical”” manufacturing unitmanufacturing unit
Material production by MBE
Device or circuit fabrication
Characterisation
Material assessment
MIMOMEMS 11MIMOMEMS 11THTH OCTOBER 2009OCTOBER 2009 SINAIA, ROMANIASINAIA, ROMANIA
- 200 m2 clean rooms (class 1000), 50m2 clean room (class 10000)
- three MBE systems (III-arsenides, III-nitrides, SiC)- Deep-UV lithography (feature size 0.3µm)
UV mask aligner, PECVD, RIE, e-gun beam evaporator, sputtering
-CharacterizationElectrical (C-V, I-V, Hall, RF-measurements up to 20GHz)
Optical (including at cryogenic temperatures)Structural (AFM, XRD, SEM, FESEM),
-Recent upgradesUV micro-photoluminescence setup
Triple-axis high-resolution XRDThermal FE-SEM, e-beam lithography (1.5nm)
Main infrastructureMain infrastructure
HRXRD apparatusHRXRD apparatus
UV µ-PL setup
Thermal Field emssion SEM for
nanopatterning
MIMOMEMS 11MIMOMEMS 11THTH OCTOBER 2009OCTOBER 2009 SINAIA, ROMANIASINAIA, ROMANIA
•
-polariton lasers and amplifiers
-ultra-efficient light emitters
-strong coupling at RT
Microcavity
polariton LED at 240K
Polariton electroluminescence
MicrocavityMicrocavity Physics and DevicesPhysics and Devices
Nature, Vol.453, p. 372, 2008
MicrocavityMicrocavity Physics and DevicesPhysics and Devices
MIMOMEMS 11MIMOMEMS 11THTH OCTOBER 2009OCTOBER 2009 SINAIA, ROMANIASINAIA, ROMANIA
3 diode (SP3T) Modulator3 diode (SP3T) Modulator
• Multiple diode modulators => isolation increase.
Diodes side Control side Switching speed
25ns
State of the art devices, best in the world in operating at high temperature>300oC
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MIMOMEMS 11MIMOMEMS 11THTH OCTOBER 2009OCTOBER 2009 SINAIA, ROMANIASINAIA, ROMANIA
77 GHz 77 GHz SchottkySchottky diode receiver diode receiver monilithicmonilithic integrated with integrated with an antenna on a membranean antenna on a membrane
MIMOMEMS 11MIMOMEMS 11THTH OCTOBER 2009OCTOBER 2009 SINAIA, ROMANIASINAIA, ROMANIA
RF MEMS integrated with RF MEMS integrated with micromachinedmicromachined componentscomponents
MIMOMEMS 11MIMOMEMS 11THTH OCTOBER 2009OCTOBER 2009 SINAIA, ROMANIASINAIA, ROMANIA
The MMID concept was demonstrated at a distance of about 1.5 m.
GaAsGaAs micromachinedmicromachined 60 GHz 60 GHz YagiYagi--UdaUda antennae based antennae based receiver used as MMID tag receiver used as MMID tag
MIMOMEMS 11MIMOMEMS 11THTH OCTOBER 2009OCTOBER 2009 SINAIA, ROMANIASINAIA, ROMANIA
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MIMOMEMS 11MIMOMEMS 11THTH OCTOBER 2009OCTOBER 2009 SINAIA, ROMANIASINAIA, ROMANIA
Winners
DESCARTES 2005
MultistackingMultistacking
MIMOMEMS 11MIMOMEMS 11THTH OCTOBER 2009OCTOBER 2009 SINAIA, ROMANIASINAIA, ROMANIA
Bonding wires
Contact pads
Chemical sensors
Fabrication of IIIFabrication of III--nitride based chemical sensorsnitride based chemical sensors
MIMOMEMS 11MIMOMEMS 11THTH OCTOBER 2009OCTOBER 2009 SINAIA, ROMANIASINAIA, ROMANIA
Electrical Electrical CharacterisationCharacterisation of of AlNAlN barrier barrier HEMTsHEMTs
0 2 4 6 8 10-0.2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
VGS
= 0V
I DS(A
/mm
)
App lied Voltage VDS
(V )
VG S
= +4VLG= 1 um
WG
= 50 um
step=1V
0.0 0 .5 1.0 1.5 2.0 2.51E1 2
1E1 3
1E1 4
1E1 5
1E1 6
1E1 7
1E1 8
1E1 9
1E2 0
1E2 1
1E2 2
-8 -7 -6 -5 -4 -3 -2 -1 0 1-5.00E-011
0.00E+000
5.00E-011
1.00E-010
1.50E-010
2.00E-010
2.50E-010
3.00E-010
3.50E-010
Cp (
F)
V(V)
D epletion w idth (um )
Sh
ee
t c
arr
ier
de
ns
ity
(c
m-3
)
0 10 20 30 40 50 60 70 80 90
20
40
60
80
100
R (
Oh
m)
D istance between TLM ohm ic contacts (um )
T LM measurements
Y= 18.6 + 1.01 XResults:
DC performance:
• IDS=1.92A/mm, (LG=1µm)
• gm=400mS/mm
• Record low channel sheet resistance: Rsh=82 Ohm/sq
• Contact resistance RT= 0.9 Ohm mm
I-V characteristics of RF transistors C-V measurements
0 2 4 6 8 10-0.2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
VGS
= 0V
I DS(A
/mm
)
App lied Voltage VDS
(V )
VGS
= +4VLG= 1 um
WG
= 50 um
step=1V
0.0 0 .5 1.0 1.5 2.0 2.51E1 2
1E1 3
1E1 4
1E1 5
1E1 6
1E1 7
1E1 8
1E1 9
1E2 0
1E2 1
1E2 2
-8 -7 -6 -5 -4 -3 -2 -1 0 1-5.00E-011
0.00E+000
5.00E-011
1.00E-010
1.50E-010
2.00E-010
2.50E-010
3.00E-010
3.50E-010
Cp (
F)
V(V)
D epletion w idth (um )
Sh
ee
t c
arr
ier
de
ns
ity
(c
m-3
)
0 10 20 30 40 50 60 70 80 90
20
40
60
80
100
R (
Oh
m)
D istance between TLM ohm ic contacts (um )
T LM measurements
Y= 18.6 + 1.01 XResults:
DC performance:
• IDS=1.92A/mm, (LG=1µm)
• gm=400mS/mm
• Record low channel sheet resistance: Rsh=82 Ohm/sq
• Contact resistance RT= 0.9 Ohm mm
I-V characteristics of RF transistors C-V measurements
MIMOMEMS 11MIMOMEMS 11THTH OCTOBER 2009OCTOBER 2009 SINAIA, ROMANIASINAIA, ROMANIA
FBAR series connection (FBAR series connection (AlNAlN membrane W= 0.357 membrane W= 0.357 µµm)m)
6 7 8 9 10 11 12
Frequency (GHz)
AlN FBAR 0.357 um
-25
-20
-15
-10
-5
0
-2.5
-2.1
-1.7
-1.3
-0.9
-0.5
DB(|S(1,1)|) (L)e0f
DB(|S(2,1)|) (R)e0f
DB(|S(1,1)|) (L)e6f
DB(|S(2,1)|) (R)e6f
Very thin membraneVery thin membrane
Operation at 10GHz, best result, unpublished)
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MIMOMEMS 11MIMOMEMS 11THTH OCTOBER 2009OCTOBER 2009 SINAIA, ROMANIASINAIA, ROMANIA
Collaboration with European Space AgencyCollaboration with European Space Agency
Aerogel for ultra light mirrors SiC JFETs
SiC based avalanche photodiodes Nitride based RDTs & Quantum dots
MIMOMEMS 11MIMOMEMS 11THTH OCTOBER 2009OCTOBER 2009 SINAIA, ROMANIASINAIA, ROMANIA
MRG effort to MRG effort to ““linklink”” with the with the ““ marketmarket””
Actions
• 1996 establish (with GSRT funding) an open services laboratory with detailed offered services/products and corresponding costs
• ISO 9001 certification of the device &IC fabrication lab and part of material & electrical characterisation
Results
• Satisfactory load of “orders”
• Small income due to the fact that the majority of the “customers” were other academic laboratories
MIMOMEMS 11MIMOMEMS 11THTH OCTOBER 2009OCTOBER 2009 SINAIA, ROMANIASINAIA, ROMANIA
ClarificationsClarifications
• Costs refer to equipment only
• Short means immediately and up to 3 years
• Medium means 5 to 6 years
• Long means 6 to 10
• TBD means that the final cost will depend on volume of order
and time scale
MIMOMEMS 11MIMOMEMS 11THTH OCTOBER 2009OCTOBER 2009 SINAIA, ROMANIASINAIA, ROMANIA
MRG potentially exploitable servicesMRG potentially exploitable services
TBDAlloysMetallization (sputtering)
1nm resolution
Wire bonding from device to package
Common metals, Noble metals, Refractory metals
Up to 1 micron thickness
GaAs MESFET
GaAs/AlGaAsHEMT
Specifics
TBDHigh resolution SEM
TBDBonding
TBDMetallization (E-BEAM)
TBDMBE (3inch) material
CostService
Interest by Ciphotonics (UK) for our Au/Sn solder bump technology
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MIMOMEMS 11MIMOMEMS 11THTH OCTOBER 2009OCTOBER 2009 SINAIA, ROMANIASINAIA, ROMANIA
MRG potentially exploitable knowMRG potentially exploitable know--how in IIIhow in III--nitrides/1nitrides/1
Best performance due to high velocity of the acoustic waves, co-integration with electronics
Access to a broad range of HEMT material
Home grown material available
Unique technique for the specific material in terms of quality
MRG key advantages
0.5ICP etcherGas sensors
Electronic filters (mobile phones)
Harsh environment operation
MediumIII-nitride based acoustic devices
BioanalysisMediumIII-nitride based ISFETs
1.5Stepper
Atomic layer oxide deposition system
Base stations
Radars
MediumAlN barrier HEMTs
1.5MBEBase stations
Radars
Harsh environment operation
ShortAlN barrier HEMT material
Investment cost (M€)
Investementtype
Target market (size)
ProspectKnow-how
∆ιπλ. Ευρεσιτεχνίας ΟΒΙ, Αριθ. 1004675, Αθήνα 13/09/2004, “Ανάπτυξη µε την µέθοδο Επίταξης µε Μοριακές ∆έσµες µε Πηγή Πλάσµατος Αζώτου ετεροδοµών
ηµιαγωγών Νιτριδίων που περιλαµβάνουν στρώµατα κραµάτων Νιτριδίου του Ινδίου-Αργιλίου-Γαλλίου”, Α. Γεωργακίλας, Ε. ∆ηµάκης, Ν. Πελεκάνος.Αίτηση Ελληνικής Πατέντας (ΟΒΙ), Αριθµός Αίτησης: 20040100117(2-4-2004), «Χρήση Ηµιαγωγού Νιτριδίου του Γαλλίου (GaN) για την Ανίχνευση και
Μέτρηση Αρνητικά Φορτισµένων Ουσιών και Συσκευές Μέτρησης», Ν. Χανιωτάκης, Ι. Αλιφραγκής, Γ. Κωνσταντινίδης και Α. Γεωργακίλας
MIMOMEMS 11MIMOMEMS 11THTH OCTOBER 2009OCTOBER 2009 SINAIA, ROMANIASINAIA, ROMANIA
MRG potentially exploitable knowMRG potentially exploitable know--how in IIIhow in III--nitrides/2nitrides/2
Investment cost (M€)
Investementtype
Target market (size)
ProspectMRG key advantages
Know-how
1.5New generation of III-nitride MBE
Space solar cells
Environmetallyfriendly solar cells
LongFull solar spectrum coverage
InGaN based high efficiency solar cells
1.5New generation of III-nitride MBE
Hyperspectralimaging
Earth imaging, Remote sensing Medical applications
LongUV-VIS spectral region
RT operation
Tunable UV-VIS PDs
1.5New generation of III-nitride MBE
Terahertz imaging
Security, ultra fast electronics, control electronics for harsh environment
MediumThe 1st
demonstration of iii-nitride RTDs
AlGaN/GaNresonant tunelling diodes
MIMOMEMS 11MIMOMEMS 11THTH OCTOBER 2009OCTOBER 2009 SINAIA, ROMANIASINAIA, ROMANIA
MRG potentially exploitable knowMRG potentially exploitable know--how in how in SiCSiC
“Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide”, K. Vassilevski, K. Zekentes, U.S.
Patent No. 6,599,644 issued on July 29, 2003 and Canadian patent No 08-888998CA issued on September 3, 2008.
Unique performance especially at elevated temperatures
MRG key advantages
0.5
0.3
LPCVD
Oxidation furnace
Defense
Commercial space
Base stations for mobiles
Low to medium power radars
(3M$ 2010 to 30M$ 2016)
ShortSiC IMPATT & PIN diodes
Investment cost (M€)
Investementtype
Target market (size)
ProspectKnow-how
Interest by MICROSEMI (USA) for our SiC based diodes
MIMOMEMS 11MIMOMEMS 11THTH OCTOBER 2009OCTOBER 2009 SINAIA, ROMANIASINAIA, ROMANIA
MRG potentially exploitable knowMRG potentially exploitable know--how in optoelectronicshow in optoelectronics
Strong advance on (211)B piezoelectric quantum dots
1st demonstration of polariton LEDs at room temperature
MRG key advantages
1Sophisticated instrumentation for handling & measuring single photons (eg. SensitivedDetectors)
Single photon emitters for
Cryptography (tens of millions$)
LongQuantum dot based devices
2In situ monitoring of thickness
MBE upgrade
ICP RIE
WDMs(billion$)
MediumPolaritonbased devices
Investment cost (M€)
Investement typeTarget market (size)
ProspectKnow-how
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MIMOMEMS 11MIMOMEMS 11THTH OCTOBER 2009OCTOBER 2009 SINAIA, ROMANIASINAIA, ROMANIA
MRG potentially exploitable knowMRG potentially exploitable know--how in oxide how in oxide TCOsTCOs & & TFTsTFTs
Transparent thin film transistors
P type oxides
MRG key advantages
1Multi-target sputtering system
Displays
Transparent electronic
Flexible electronics
(billions of $)
MediumTFTs
1Multi-target sputtering system
UV LEDsemitters
UV-detector arrays
Solar cells
(millions of $)
MediumThin oxide technology
Investment cost (M€)
Investementtype
Target market (size)
ProspectKnow-how
MIMOMEMS 11MIMOMEMS 11THTH OCTOBER 2009OCTOBER 2009 SINAIA, ROMANIASINAIA, ROMANIA
MRG potentially exploitable knowMRG potentially exploitable know--how in micromachininghow in micromachining
1st
demonstration of passive & active devices monolithically integrated on a membrane
MRG key advantages
1
.05
E-beam aligner
ICP etcher
Short range communication
Ambient intelligence
MediumVery thin Membrane technology
Investment cost (M€)
Investementtype
Target market (size)
ProspectKnow-how
MIMOMEMS 11MIMOMEMS 11THTH OCTOBER 2009OCTOBER 2009 SINAIA, ROMANIASINAIA, ROMANIA
MRG potentially exploitable knowMRG potentially exploitable know--how in ESA related activitieshow in ESA related activities
1st
demonstration
MRG key advantages
0.3Dedicated metal evaporator with slow pumping and venting accessories
SpaceShortUltra light mirrors & other optical components on aerogelsubstrates
Investment cost (M€)
Investementtype
Target market (size)
ProspectKnow-how
MIMOMEMS 11MIMOMEMS 11THTH OCTOBER 2009OCTOBER 2009 SINAIA, ROMANIASINAIA, ROMANIA
Final commentsFinal comments
• MRG have technologies to exploited immediately
• There is a growing “microelectronics” environment in Greece (HSIA, Cluster Coralia, Micro&Nano) but targets (at the moment) very focused areas and is fabless and Si or Si-Ge
• Difficult to develop products within an academic laboratory
• There is a need for significant and steady investment in equipment and people
• Latest example : FBH institute in Berlin has created a spin off company in GaN/AlGaNMMICs (BeMiTec), with a facility 700m2 clean rooms and an annual state funding of 9 M€ from which 2-3 are for new equipment