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BIRLA INSTITUTE OF TECHNOLOGY AND SCIENCE, PILANI

First Semester 2015-2016

Microelectronics Circuits (EEE C 424/INSTR C 313)

QUIZ - 3 DATE: 4.02.2016 

ID: Name: Section

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Q: For the circuit shown in the Figure below, find the transfer function = V o(s)/ Vs(s).

Provide the bode magnitude and phase plots.

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Birla Institute of Technology and Science Pilani (Rajasthan)

Department of Electrical and Electronics Engineering

EEE/INSTR F244 Microelectronic Circuits

Second Semester 2015-16

Date : 18/02/2016 Tutorial – 5

Use the following data whereever necessary. VDD=3.3V

VT0 (V) µ(cm2/V-s) λ (V

-1) Tox (nm) γ (V

0.5) |2ΦF| (V) η 

 NMOS 0.70 350 0.1 9 0.45 0.9 0.8

PMOS -0.80 100 0.2 9 0.40 0.8 0.8

1.  Draw the Small signal low frequency eqvivalent circuit of a PMOS, NMOS .

2.  Prove that the Gate-Drain Connected MOSFET acts in saturation region and its

equivalent resistance as seen from the drain terminal is

. (γ=0 , λ≠0) 

3.  For the circuit shown below calculate the small signal gain , output resistance

using small signal equivalent. (If not mentioned assume body of NMOS is connected to

ground while for PMOS to VDD) (γ=0 , λ≠0)    

Figure 1 Question No.3 

4.  For a common source amplifier gain can be calculated using the relation below. Verify

this for the circuit in question no.3

 

***All The Best***

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