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    Slip by Dislocation Motion

    *

    DIETER: Ch. 4, p. 114-132; Ch. 5, p. 145-183; Ch. 8, p. 310-314

    HERTZBERG: Ch. 2

    . , . - HULL & BACON, Ch. 3, pp. 42-61

    Reed-Hill & Abbaschian: Chs. 4 and 5

    Prof. M.L. Weaver

    , .

    *This list does not mean that you need to read all of these chapters. It has been assembled toprovide you with suggested reading from that you may be using OR referring to in your course.Most of these chapters cover similar material. Any required reading will be noted separately.

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    Types of Dislocation MotionTypes of Dislocation Motion

    Glide (conservative motion): moves on a lane that contains both its line and Bur ers

    vector. A that moves glides is called glissile. A that cant move is called sessile. glide plane and direction depend upon crystal structure.

    - moves out of the glide plane perpendicular to the Burgers

    vector.

    Glide of many dislocations leads to slip which is themost common manifestation of plastic deformation.

    Prof. M.L. Weaver

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    Slip by Dislocation GlideSlip by Dislocation Glide

    Glide requires relatively little atomic motion compared with

    the process for slip that we outlined for perfect (i.e., defect

    ree crys a s.

    b

    Af ter complete motion

    through crystal

    There is also no net chan e inMonotonic slip stepbonding. This makes the stress

    to move a dislocation smaller than the theoretical stress to

    Prof. M.L. Weaver

    .

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    Force is required to move individual dislocationsForce is required to move individual dislocations

    We call it the Peierls-Nabarro force.

    The concept was originally developed in 1940 by

    Peierls1, but later refined by others2-4.

    It is the frictional force that must be overcome to

    move an individual dislocation.

    It is a consequence of the distortion caused by the

    presence o a s oca on n a crys a a ce.

    1R. Peierls Proc. Ph s. Soc. v. 52 . 34 1940 .

    Prof. M.L. Weaver

    2F.R.N. Nabarro, Proc. Phys. Soc., v. 59, p. 256 (1947).3

    G. Leibfried and K. Lcke, Z. Phys., v. 126, p. 450 (1949).4A.J. Foreman, M.A. Jawson, and J.K. Wood, Proc. Phys. Soc., v. 64, p. 156 (1951).

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    A dislocation must pass through a higher energy configuration to move.

    Energy EP-N

    E

    n-s ppe

    state

    ppe

    state

    Displacement,xb/20 b

    The force required to move the dislocation (i.e., to overcome stressfield caused by lattice distortion) shear stress on a slip plane.

    -

    Prof. M.L. Weaver

    relation between atoms.

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    Force EP-N

    or

    Stress

    P-N

    Displacement,xb/20 b

    The Peierls-Nabarro stress is the shear stress required to move anindividual dislocation on its slip plane.

    Prof. M.L. Weaver

    dislocation.

    Amount of distortion described by dislocation width (w).

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    u

    Distortion described

    in terms of

    ,

    w

    -b/2

    >, ,

    its maximum value (i.e., u/b > or -b/4 u b/4).

    .

    Core widths vary between b and 5b and depend upon:

    Prof. M.L. Weaver

    n era om c po en a ,

    Crystal structure.The width, w, is

    directly related tocrystal structure

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    Fig. A. Close packedSchematicillustration of a

    wide dislocation;

    more typical of

    close- acked

    structures: w is

    larger. Distortion

    distributed through

    b/4 b/4

    metals. .

    g. .

    Schematic

    illustration of a

    narrow

    dislocation; more

    on-c ose pac e

    structures: w is

    smaller. Distortion

    concentrated into a

    b/4 b/4

    typical ofceramics,

    intermetallics,

    and non-close-

    smaller area.

    Prof. M.L. Weaver

    w .

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    Peierls and Nabarro estimated the energy of the dislocation

    2 2exp

    (1 )P N

    w

    bE

    bG

    from which the shear stress required to move a dislocation

    i.e. Peierls stress can be determined as:

    22 2 2 2 2

    exp exp(1 ) (1 ) (1 )P N P N b b b

    G w dG

    E

    Values of P-Nvary with crystal structure. In general,

    P-N

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    b

    d

    A B C D

    22 2 2 2 2

    exp exp(1 ) (1 ) (1 )P N P N b b b

    G w dG

    E

    Let G = 100 GPa and = 0.3.

    -

    Prof. M.L. Weaver

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    Variation of Peierls Stress w/Variation of Peierls Stress w/ ddandand bb

    12

    14 b= 1.0b= 5.0

    b = 10.0 For fixed b, P-Ndecreases

    exp

    (1 ) (1 )P N

    b

    8

    10

    s(x10

    7)

    d= 1 to 10

    as ncreases.

    An increase inb results in a

    larger P-N.

    4

    6

    ierlsStre

    Slip via dislocation motion

    occurs more readily in close

    packed directions (lowest b)

    0

    2Pe and on widely spaced

    planes (highest d). This is

    because P-N values are

    bb

    Interplanar Spacing (arb. units)

    .

    The width, w, is

    [d]

    Prof. M.L. Weaver

    d

    A B C D

    d

    A B C D

    directly related to

    crystal structure

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    Variation of Peierls Stress w/Variation of Peierls Stress w/ ddandand bb

    12 d= 1.0d= 2.0

    d= 5.0 For fixed d,P-N increases

    exp

    (1 ) (1 )P N

    b

    8 b= 1 to 10

    s(x10

    7) d= 10.0 as ncreases.

    An increase indresults in a

    reducedP-N.

    4

    ier

    lsStre

    Slip via dislocation is more

    likely to occur more readily

    in close packed directions

    0

    P (lowest b) and on widely

    spaced planes (highest d).

    This is becauseP-Nvalues

    Atomic Separation (arb. units)

    .

    The width, w, isbb

    [b]

    Prof. M.L. Weaver

    directly related to

    crystal structured

    A B C D

    d

    A B C D

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    Close Packed PlanesClose Packed Planes Recall from your introductory materials courses:

    Close acked lanes i.e. those with the smallest interatomic

    separation, d) are the ones that are spaced farthest apart (i.e., those

    with the largest b).

    We can relate properties to atomic/ionic packing factors (APF/IPF) or

    planar density.

    Ionic Covalent

    Diamond

    APF

    IPF0.74 0.68 0.52 0.725 0.67 0.68 0.627 0.34

    1 3 7 2 5 3 6 8P N

    Prof. M.L. Weaver

    Rank 1 8 where 1 is lowest and 8 is highest.

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    Slip vs. atomic densitySlip vs. atomic density

    Close-packed planes/structuresSlipdistance, b

    ma er

    Larger d

    spacing, d

    P N p p ane(high atomic density)

    Non close-packed planes/structuresSlip

    distance, b

    Planar

    spacing, d

    Larger b

    Smaller d

    Prof. M.L. Weaver

    arger P N

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    The Peierls-Nabarro stress is smaller than

    the critical resolved shear stress or the

    The CRSS and YS represent the

    conditions to move lots of dislocations

    Prof. M.L. Weaver

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    Slip Systems in CrystalsSlip Systems in Crystals

    A specific shear stress is required to

    induce dislocations to move.

    z

    zz

    Dislocations slip on specific slip

    systems (i.e., specific crystal plane +

    specific crystal direction on that plane).

    y

    The resolved shear stress on planeAs

    x

    s

    coscos cos

    y zz y zz

    F F

    o

    Applies for single crystals and individual

    z o

    z z y za a xzF

    Prof. M.L. Weaver

    grains in polycrystals.90

    is not necessarily 90

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    Resolved Shear StressResolved Shear Stress

    ons er an ar rary p ane or en e a ang e w respec o e app e oa .Lety = slip direction andz = slip plane normal.

    Consider SLIP on the -plane.

    Refer to

    illustration on

    NORMAL Force:FN=Fz =Fzcos

    previous

    viewgraph

    s z .

    Area of slip-plane: As =A/cos (check: As must have larger area thanAo.)

    Resolved NORMAL Stress on the slip plane:

    2/ cos / cos cosN N s oF A F A

    Resolved SHEAR Stress on the slip plane in the slip direction:

    / cos / cos cos coss RSS s s oF A F A

    Prof. M.L. Weaver

    The slip direction is not necessarily in same direction as til t of the slip plane!

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    Critical Resolved Shear StressCritical Resolved Shear Stress

    coscos cos cosflow flowSchmid Factor

    or

    RSS

    o

    mA

    flowRSS

    m

    .

    stress as opposed to the flow stress, we get:

    cos coscos cosy CRSS y ym or

    Prof. M.L. Weaver

    CRSS is theresolved shear stress requiredto initiate plastic

    deformation via slip.

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    Solution to Example Problem 1

    plane (111) is:

    2 2 2 2 2 2

    (1)(1) ( 2)( 1) (0)( 1) 3 3

    cos 5 3 15(1) ( 2) (0) (1) ( 1) ( 1)

    Angle btw.

    Tensile axis & slipplane normal

    The angle between the tensile axis [120] and the slip direction [011] is:

    2 2 2 2 2 2

    (1)(0) ( 2)( 1) (0)(1) 2 2cos

    5 2 10(1) ( 2) (0) (0) ( 1) ( 1)

    Angle btw.

    Tensile axis & slip

    direction

    Since CRSS = 10 MPa,

    Prof. M.L. Weaver

    10

    cos cos 3/ 15 220

    /.

    11

    04CRSS

    P

    A

    MPa

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    Solution to Example Problem 1

    plane (111) is:

    2 2 2 2 2 2

    (1)(1) ( 2)( 1) (0)( 1) 3 3

    cos 5 3 15(1) ( 2) (0) (1) ( 1) ( 1)

    The angle between the tensile axis [120] and the slip direction [011] is:

    2 2 2 2 2 2

    (1)(0) ( 2)( 1) (0)(1) 2 2cos

    5 2 10(1) ( 2) (0) (0) ( 1) ( 1)

    Since CRSS = 10 MPa,

    Prof. M.L. Weaver

    10

    cos cos 3/ 15 220

    /.

    11

    04CRSS

    P

    A

    MPaB*

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    Room temperature slip systems and critical resolved shear stress formetal single crystals (from Dieter, 3rd Edition, p. 126).

    Critical

    Cr stal Sli Sli Shear stressMetal PurityStructure Plane Direction

    99.999 (0001) [1120] 0.18 [1]

    99.996 (0001) [1120] 0.77 [2]

    99.996 (0001) [1120] 0.58 [3]

    Zn HCP

    Mg HCP

    Cd HCP

    (MPa) Reference

    . .99.9 [1120] 90.1(1010)

    99.999 (111)(11199.97

    99.93

    Ag FCC [110] 0.48 [5][110])0.73[110](111)

    [110](111) 1.3

    99.999 (111) [101] 0.65 [5]99.98 [101](111)

    0.94

    99.8 (111) [110] 5.7 [5]

    99.96 (110) [111] 27.5 [6](112)

    Cu FCC

    Ni FCC

    Fe BCC

    (110) [111] 49.0 [7]

    [1] D.C. Jillson,

    Mo BCC

    Tran

    , v. 188, p. 1129 (1950).

    [2] E.C. Burke and W.R. Hibbard, Jr., , v. 194, p. 295 (1952).

    " "

    s. AIME

    Trans. AIME

    . , , . ,

    [4] A.T. Churchman, , v. 226A, p. 216 (1954)[5] F.D. Rosi, , v. 200, p. 1009 (1954)

    [6] J.J. Cox, R.F. Mehl, and G.T. Horne, , v. 49, p. 118

    Proc. R. Soc. London Ser. ATrans. AIME

    Trans. Am. Soc. Met. (1957)

    [7] R. Maddin and N.K. Chen, , v. 191, p. 937 (1951)Trans. AIME

    Prof. M.L. Weaver

    Note the differences in slip systems for different crystal structures. Slip occurs

    when m is maximum. This means that we must determine which particular slipsystem has the maximum m to obtain the CRSS.

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    Example Problem 2

    Consider a c lindrical sin le cr stal of silver of 5 mmdiameter with its axis parallel to [321]. This crystal begins

    to deform plastically in compression at a load of 39 N.

    Determine the CRSS for this crystal.

    Prof. M.L. Weaver

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    Solution to Example Problem 2 .Silver has an FCC crystal structure. Thus the slip system is 111 110

    There are 12 distinct slip systems for FCC. For each we must compute

    and tabulate the corresponding angles and , as well as the Schmid

    . .

    1 2 2 1 1 2

    1 1 1 2 2 22 2 2 2 2 2

    1 1 1 2 2 2

    cos h k l h k l

    h k l h k l

    Slip System

    cos

    cos

    (a/2) [1 1 0] (1 1 1) 79.11 22.21 0.1749

    (a/2) [1 0 1] (1 1 1) 67.79 22.21 0.3500

    (a/2) [0 1 1] (1 1 1) 79.11 22.21 0.1749

    . . .

    (a/2) [1 0 1] (1 1 1) 40.89 51.89 0.4666

    (a/2) [1 1 0] (1 1 1) 79.11 51.89 0.1166

    (a/2) [1 1 0] (1 1 1) 19.11 72.02 0.2917

    (a/2) [1 0 1] (1 1 1) 67.79 72.02 0.1167

    a/2 0 1 1 1 1 1 55.46 72.02 0.1750

    mmax

    . . .

    (a/2) [0 1 1] (1 1 1) 79.11 90.00 0.0000(a/2) [1 0 1] (1 1 1) 40.89 90.00 0.0000

    (a/2) [1 1 0] (1 1 1) 19.11 90.00 0.0000

    39N

    Prof. M.L. Weaver

    maxcos cos cos cos(5 ) / 4

    2 0.466 0.935

    CRSS

    CRSS

    mA

    2mm

    MPa MPa

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    Solution to Example Problem 2 .Silver has an FCC crystal structure. Thus the slip system is 111 110

    There are 12 distinct slip systems for FCC. For each we must compute

    and tabulate the corresponding angles and , as well as the Schmid

    . .

    1 2 2 1 1 2

    1 1 1 2 2 22 2 2 2 2 2

    1 1 1 2 2 2

    cos h k l h k l

    h k l h k l

    Slip System

    cos

    cos

    (a/2) [1 1 0] (1 1 1) 79.11 22.21 0.1749

    (a/2) [1 0 1] (1 1 1) 67.79 22.21 0.3500

    (a/2) [0 1 1] (1 1 1) 79.11 22.21 0.1749

    . . .

    (a/2) [1 0 1] (1 1 1) 40.89 51.89 0.4666

    (a/2) [1 1 0] (1 1 1) 79.11 51.89 0.1166

    (a/2) [1 1 0] (1 1 1) 19.11 72.02 0.2917

    (a/2) [1 0 1] (1 1 1) 67.79 72.02 0.1167

    a/2 0 1 1 1 1 1 55.46 72.02 0.1750

    mmax

    . . .

    (a/2) [0 1 1] (1 1 1) 79.11 90.00 0.0000(a/2) [1 0 1] (1 1 1) 40.89 90.00 0.0000

    (a/2) [1 1 0] (1 1 1) 19.11 90.00 0.0000

    39N

    Prof. M.L. Weaver

    maxcos cos cos cos(5 ) / 4

    2 0.466 0.935

    CRSS

    CRSS

    mA

    2mm

    MPa MPa

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    Critical Resolved Shear StressCritical Resolved Shear Stress

    Condition for dislocation motion: CRSSR

    Crystal orientation can make

    it easy or hard to move dislocation10-4 GPa to 10-2 GPa coscosR

    R = 0=90

    R = /2 =45

    R = 0

    =90

    =45

    Prof. M.L. Weaver

    R = max.at = = 45

    R = 0 at

    = = 90

    R = 0 at

    = = 0

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    Common Slip Planes in MetalsCommon Slip Planes in Metals

    fcc112

    111

    y

    110

    011 101

    Four 111 planes each with 3 110 slip directions

    Prof. M.L. Weaver

    [Adapted from Felbeck and Atkins, 2nd Ed., p. 117]

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    Common Slip Planes in MetalsCommon Slip Planes in Metals1120

    (b)(a)

    1120 hcp

    1210 1210

    2110

    2110

    Figure. (a) Basal slip plane; (b) atomic arrangement on basal

    One 0001 plane with three 1120 slip directions

    p ane w poss e s p rec ons n ca e .

    Three 1010 planes with one 1120 slip direction on each

    Six 1011 planes with one 1120 slip direction on each

    Prof. M.L. Weaver

    12 slip systems possible. # active depends on c/a ratio

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    Common Slip Planes in MetalsCommon Slip Planes in Metals1 11

    oaz

    111

    bcc 122oa 101

    y

    010

    10 1

    1 11 z

    x 101

    123oa

    1 10

    111

    2oax

    z

    120

    243oa

    213

    111

    Prof. M.L. Weaver[After Felbeck and Atkins, 2nd Ed., p. 118]

    48 slip

    systems5oax

    y120

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    Crystal Slip Slip Number of non- Slip directions Number ofstructure plane direction parallel planes per plane slip systems

    .

    fcc 111 110 4 3 4 3 12

    bcc 110 111 6 2 6 2 12

    112

    111 12 1 12 1 12

    123 111 24 1 24 1 24

    hcp 0001 1120 1 3 1 3 3

    1010 1120 3 1 3 1 3

    1011 1120 6 1 6 1 6

    Prof. M.L. Weaver

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    Does bonding influence dislocation motion?Does bonding influence dislocation motion?

    Metals: Disl. motion easier.++++++++

    YES!

    - -

    -close-packed directionsfor slip. electron cloud ion cores

    +

    +

    ++ + + + + +

    +++++++

    Covalent Crystals

    Si diamond : Motion hard.-directional (angular) bonding

    on c rys a s a :Motion hard.-need to avoid ++ and - -

    + + + ++++

    - - -----

    Prof. M.L. Weaver

    neighbors.- - -

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    Limited #independent slipsystems

    . .

    Prof. M.L. Weaver

    rom arter an orton, eram c ater a s c ence an ng neer ng, p.