mc1496rev4f

DeviceOperating

Temperature Range Package

SEMICONDUCTORTECHNICAL DATA

BALANCEDMODULATORS/DEMODULATORS

ORDERING INFORMATION

MC1496DMC1496P

TA = 0C to +70CSO14

Plastic DIP

PIN CONNECTIONS

Order this document by MC1496/D

D SUFFIXPLASTIC PACKAGE

CASE 751A(SO14)

P SUFFIXPLASTIC PACKAGE

CASE 646

Signal Input 1

2

3

4

5

6

7

10

11

14

13

12

9

N/C

Output

Bias

Signal InputGain AdjustGain Adjust

Input Carrier8

VEEN/C

Output

N/C

Carrier Input

N/C

14

1

14

1

MC1496BP Plastic DIPTA = 40C to +125C

1MOTOROLA ANALOG IC DEVICE DATA

These devices were designed for use where the output voltage is aproduct of an input voltage (signal) and a switching function (carrier). Typicalapplications include suppressed carrier and amplitude modulation,synchronous detection, FM detection, phase detection, and chopperapplications. See Motorola Application Note AN531 for additional designinformation. Excellent Carrier Suppression 65 dB typ @ 0.5 MHz

Excellent Carrier Suppression 50 dB typ @ 10 MHz Adjustable Gain and Signal Handling Balanced Inputs and Outputs High Common Mode Rejection 85 dB typical

This device contains 8 active transistors.

Figure 1. SuppressedCarrier Output

Waveform

Figure 2. SuppressedCarrier Spectrum

Figure 3. AmplitudeModulation Output

Waveform

Figure 4. AmplitudeModulation Spectrum

IC = 500 kHz, IS = 1.0 kHz

IC = 500 kHzIS = 1.0 kHz

60

40

20

0

Log S

cale

Id

499 kHz 500 kHz 501 kHz



499 kHz 500 kHz 501 kHz

Linea

r Sca

le

10

8.0

6.0

4.0

2.0

0

Motorola, Inc. 1996 Rev 4

MC1496, B

2 MOTOROLA ANALOG IC DEVICE DATA

MAXIMUM RATINGS (TA = 25C, unless otherwise noted.)Rating Symbol Value Unit

Applied Voltage(V6 V8, V10 V1, V12 V8, V12 V10, V8 V4,V8 V1, V10 V4, V6 V10, V2 V5, V3 V5)

V 30 Vdc

Differential Input Signal V8 V10V4 V1

+5.0(5+ I5Re)

Vdc

Maximum Bias Current I5 10 mAThermal Resistance, JunctiontoAir

Plastic Dual InLine PackageRJA 100 C/W

Operating Temperature Range TA 0 to +70 CStorage Temperature Range Tstg 65 to +150 C

NOTE: ESD data available upon request.

ELECTRICAL CHARACTERISTICS (VCC = 12 Vdc, VEE = 8.0 Vdc, I5 = 1.0 mAdc, RL = 3.9 k, Re = 1.0 k, TA = Tlow to Thigh,all input and output characteristics are singleended, unless otherwise noted.)

Characteristic Fig. Note Symbol Min Typ Max Unit

Carrier FeedthroughVC = 60 mVrms sine wave and

offset adjusted to zeroVC = 300 mVpp square wave:

offset adjusted to zerooffset not adjusted

fC = 1.0 kHzfC = 10 MHz

fC = 1.0 kHzfC = 1.0 kHz

5 1 VCFT

40140

0.0420

0.4200

Vrms

mVrms

Carrier SuppressionfS = 10 kHz, 300 mVrms

fC = 500 kHz, 60 mVrms sine wavefC = 10 MHz, 60 mVrms sine wave

5 2 VCS

40

6550

dB

k

Transadmittance Bandwidth (Magnitude) (RL = 50 )Carrier Input Port, VC = 60 mVrms sine wave

fS = 1.0 kHz, 300 mVrms sine waveSignal Input Port, VS = 300 mVrms sine wave|VC| = 0.5 Vdc

8 8 BW3dB

300

80

MHz

Signal Gain (VS = 100 mVrms, f = 1.0 kHz; |VC|= 0.5 Vdc) 10 3 AVS 2.5 3.5 V/VSingleEnded Input Impedance, Signal Port, f = 5.0 MHz

Parallel Input ResistanceParallel Input Capacitance

6 ripcip

2002.0

kpF

SingleEnded Output Impedance, f = 10 MHzParallel Output ResistanceParallel Output Capacitance

6 ropcoo

405.0

kpF

Input Bias Current 7 IbS 12 30

A

IbSI1 I4

2 ; IbCI8 I10

2IbSIbC

1212

3030

Input Offset CurrentIioS = I1I4; IioC = I8I10

7 IioSIioC

0.70.7

7.07.0

A

Average Temperature Coefficient of Input Offset Current(TA = 55C to +125C)

7 TCIio 2.0 nA/C

Output Offset Current (I6I9) 7 Ioo 14 80 AAverage Temperature Coefficient of Output Offset Current

(TA = 55C to +125C)7 TCIoo 90 nA/C

CommonMode Input Swing, Signal Port, fS = 1.0 kHz 9 4 CMV 5.0 VppCommonMode Gain, Signal Port, fS = 1.0 kHz, |VC|= 0.5 Vdc 9 ACM 85 dBCommonMode Quiescent Output Voltage (Pin 6 or Pin 9) 10 Vout 8.0 VppDifferential Output Voltage Swing Capability 10 Vout 8.0 VppPower Supply Current I6 +I12Power Supply Current I14

7 6 ICCIEE

2.03.0

4.05.0

mAdc

DC Power Dissipation 7 5 PD 33 mW

MC1496, B


GENERAL OPERATING INFORMATIONCarrier Feedthrough

Carrier feedthrough is defined as the output voltage atcarrier frequency with only the carrier applied (signalvoltage = 0).

Carrier null is achieved by balancing the currents in thedifferential amplifier by means of a bias trim potentiometer(R1 of Figure 5).Carrier Suppression

Carrier suppression is defined as the ratio of eachsideband output to carrier output for the carrier and signalvoltage levels specified.

Carrier suppression is very dependent on carrier inputlevel, as shown in Figure 22. A low value of the carrier doesnot fully switch the upper switching devices, and results inlower signal gain, hence lower carrier suppression. A higherthan optimum carrier level results in unnecessary device andcircuit carrier feedthrough, which again degenerates thesuppression figure. The MC1496 has been characterizedwith a 60 mVrms sinewave carrier input signal. This levelprovides optimum carrier suppression at carrier frequenciesin the vicinity of 500 kHz, and is generally recommended forbalanced modulator applications.

Carrier feedthrough is independent of signal level, VS.Thus carrier suppression can be maximized by operatingwith large signal levels. However, a linear operating modemust be maintained in the signalinput transistor pair orharmonics of the modulating signal will be generated andappear in the device output as spurious sidebands of thesuppressed carrier. This requirement places an upper limit oninputsignal amplitude (see Figure 20). Note also that anoptimum carrier level is recommended in Figure 22 for goodcarrier suppression and minimum spurious sidebandgeneration.

At higher frequencies circuit layout is very important inorder to minimize carrier feedthrough. Shielding may benecessary in order to prevent capacitive coupling betweenthe carrier input leads and the output leads.

Signal Gain and Maximum Input LevelSignal gain (singleended) at low frequencies is defined

as the voltage gain,

AVSVoVS

RLRe2re

where re26 mVI5(mA)

A constant dc potential is applied to the carrier input terminalsto fully switch two of the upper transistors on and twotransistors off (VC = 0.5 Vdc). This in effect forms a cascodedifferential amplifier.

Linear operation requires that the signal input be below acritical value determined by RE and the bias current I5.

VS I5 RE (Volts peak)Note that in the test circuit of Figure 10, VS corresponds to amaximum value of 1.0 V peak.

Common Mode SwingThe commonmode swing is the voltage which may be

applied to both bases of the signal differential amplifier,without saturating the current sources or without saturatingthe differential amplifier itself by swinging it into the upper

switching devices. This swing is variable depending on theparticular circuit and biasing conditions chosen.Power Dissipation

Power dissipation, PD, within the integrated circuit packageshould be calculated as the summation of the voltagecurrentproducts at each port, i.e. assuming V12 = V6, I5 = I6 = I12and ignoring base current, PD = 2 I5 (V6 V14) + I5)V5 V14 where subscripts refer to pin numbers.

Design EquationsThe following is a partial list of design equations needed to

operate the circuit with other supply voltages and inputconditions.A. Operating Current

The internal bias currents are set by the conditions at Pin 5.Assume:

I5 = I6 = I12,IB IC for all transistors

then :

R5V

I5 500 where: R5 is the resistor betweenwhere: Pin 5 and groundwhere: = 0.75 at TA = +25C

The MC1496 has been characterized for the conditionI5 = 1.0 mA and is the generally recommended value.B. CommonMode Quiescent Output Voltage

V6 = V12 = V+ I5 RLBiasing

The MC1496 requires three dc bias voltage levels whichmust be set externally. Guidelines for setting up these threelevels include maintaining at least 2.0 V collectorbase biason all transistors while not exceeding the voltages given inthe absolute maximum rating table;

30 Vdc [(V6, V12) (V8, V10)] 2 Vdc30 Vdc [(V8, V10) (V1, V4)] 2.7 Vdc30 Vdc [(V1, V4) (V5)] 2.7 Vdc

The foregoing conditions are based on the followingapproximations:

V6 = V12, V8 = V10, V1 = V4Bias currents flowing into Pins 1, 4, 8 and 10 are transistorbase currents and can normally be neglected if external biasdividers are designed to carry 1.0 mA or more.Transadmittance Bandwidth

Carrier transadmittance bandwidth is the 3.0 dB bandwidthof the device forward transadmittance as defined by:

21Cio (each sideband)

vs (signal) Vo 0Signal transadmittance bandwidth is the 3.0 dB bandwidth

of the device forward transadmittance as defined by:

21Sio (signal)vs (signal) Vc 0.5 Vdc, Vo 0

MC1496, B


Coupling and Bypass CapacitorsCapacitors C1 and C2 (Figure 5) should be selected for a

reactance of less than 5.0 at the carrier frequency.

Output SignalThe output signal is taken from Pins 6 and 12 either

balanced or singleended. Figure 11 shows the output levelsof each of the two output sidebands resulting from variationsin both the carrier and modulating signal inputs with asingleended output connection.Negative Supply

VEE should be dc only. The insertion of an RF choke inseries with VEE can enhance the stability of the internalcurrent sources.

Signal Port StabilityUnder certain values of driving source impedance,

oscillation may occur. In this event, an RC suppressionnetwork should be connected directly to each input usingshort leads. This will reduce the Q of the sourcetunedcircuits that cause the oscillation.

Signal Input(Pins 1 and 4) 510

10 pF

An alternate method for lowfrequency applications is toinsert a 1.0 k resistor in series with the input (Pins 1, 4). Inthis case input current drift may cause serious degradation ofcarrier suppression.

TEST CIRCUITS

NOTE: Shielding of input and output leads may be neededto properly perform these tests.

Figure 5. Carrier Rejection and Suppression Figure 6. InputOutput Impedance

Figure 7. Bias and Offset Currents Figure 8. Transconductance Bandwidth

0.01F2.0 k

8.0 Vdc

I6

I9

1.0 k

I7I8

6.8 k

Zout+ Vo+

+ VoI9

3RL

3.9 k

VCC12 Vdc

8

C10.1 F

MC1496

1.0 k2

Re

1.0 k

C20.1 F

51

10 kModulatingSignal Input

CarrierInput

VC

Carrier Null

515110 k50 k

R1

VS Vo

RL3.9 k

I6

I4

6

14 512

2

Re = 1.0 k

3

Zin

0.5 V 810

I1

41

Vo101 64

14 512

6.8 kVI10 I5

8.0 VdcVEE

1.0 k

MC1496

MC1496MC1496 6

14 512

I10 6.8 k

8.0 VdcVEE

VCC12 Vdc

2

Re = 1.0 k

3

1.0 kModulatingSignal Input

CarrierInput

VCVS

0.1 F

0.1 F

1.0 k

51

1.0 k

14 5

6

12

1.0 k2 3

Re

VCC12 Vdc

2.0 k

+ Vo Vo

6.8 k

10 k

Carrier Null

5110 k50 k

V8.0 Vdc

VEE

50 50810

41

810

41

51

MC1496, B


+ Vo

3 3.9 k

VCC12 Vdc

8

MC1496

2

Re = 1.0 k1.0 k0.5 V

1.0 k

50

+

VS Vo

101 64

14 512

6.8 k

8.0 VdcVEE

3.9 k

ACM 20 logVoVS

Figure 9. Common Mode Gain Figure 10. Signal Gain and Output Swing

V ,

OUTP

UT AM

PLIT

UDE

OF E

ACH

SIDE

BAND

(Vrm

s)O

r ,

PARA

LLEL

IN

PUT R

ESIS

TANC

E (k

ip

Figure 11. Sideband Output versusCarrier Levels

Figure 12. SignalPort ParallelEquivalentInput Resistance versus Frequency

c ,

PARA

LLEL

IN

PUT C

APAC

ITANC

E (pF

)ip

c

, PAR

ALLE

L OUT

PUT C

APAC

ITANC

E (pF

)op

Figure 13. SignalPort ParallelEquivalentInput Capacitance versus Frequency

Figure 14. SingleEnded Output Impedanceversus Frequency

TYPICAL CHARACTERISTICSTypical characteristics were obtained with circuit shown in Figure 5, fC = 500 kHz (sine wave),

VC = 60 mVrms, fS = 1.0 kHz, VS = 300 mVrms, TA = 25C, unless otherwise noted.

I5 =1.0 mA

+ Vo

3 3.9 k

VCC12 Vdc

2

Re = 1.0 k

Vo6

14 512

6.8 k

8.0 VdcVEE

3.9 k0.5 V+

1.0 k

1.0 k

VS

50

1.0

2.0

0

140

rip

+rip

14

12

10

8.0

6.0

4.0

010010

120

0

101.0

20

5.0 100

40

50

1.0

1.0f, FREQUENCY (MHz)

80

200

2.0

5.010

100

100

5001.0 M

60

50

100102.0

3.0

2.0

1.0

0

5.0

400 mV

Signal Input = 600 mV

4.0

VC, CARRIER LEVEL (mVrms)

1.6

0

0.8

0

0.4

1.2

10050 150

5.0

100 mV200 mV300 mV

5020f, FREQUENCY (MHz)f, FREQUENCY (MHz)

MC1496

81014

rop

)

r ,

PARA

LLEL

OU

TPUT

RE

SIST

ANCE

(kop

)

cop

MC1496, B


30

f, FREQUENCY (MHz)

20

10

0

10

20

0.1 1.0 10 1000.01

RL = 3.9 kRe = 500

RL = 3.9 kRe = 2.0 k

|VC| = 0.5 VdcRL = 500 Re = 1.0 k

RL = 3.9 k (StandardRe = 1.0 k Test Circuit)

A , SI

NGLE

-END

ED V

OLTA

GE G

AIN

(dB)

V S

1001.0

Side Band

0.30.4

01000

fC, CARRIER FREQUENCY (MHz)

0.6

0.91.0

10

0.80.7

0.1

0.2

0.5

0.1

21, T

RANS

ADMI

TTAN

CE (m

mho)

800

fC 3fS

800600400200VS, INPUT SIGNAL AMPLITUDE (mVrms)

fC 2fS

0

60

50

40

30

20

10

70

SUPP

RESS

ION

BELO

W E

ACH

FUND

AMEN

TAL

CARR

IER

SIDE

BAND

(dB)

fC

2fC

505.00.05 0.1 0.5 1.0 10

3fC

0

60

50

40

30

20

10

70


SUPP

RESS

ION

BELO

W E

ACH

FUND

AMEN

TAL

CARR

IER

SIDE

BAND

(dB)

TA, AMBIENT TEMPERATURE(C)

MC1496(70C)

75 50

60

755025025

50

40

30

20

10

100 125 150 17570

CSV

, CAR

RIER

SUP

PRES

ION

(dB)

AVRL

Re 2re

TYPICAL CHARACTERISTICS (continued)Typical characteristics were obtained with circuit shown in Figure 5, fC = 500 kHz (sine wave),

VC = 60 mVrms, fS = 1.0 kHz, VS = 300 mVrms, TA = 25C, unless otherwise noted.

0.1

5010

10

1.0

0.011.0 5.00.05 0.1 0.5


V

, CA

RRIE

R OU

TPUT

VO

LTAG

E (m

Vrms)

CFT

Signal Port0

Figure 15. Sideband and Signal PortTransadmittances versus Frequency

Figure 16. Carrier Suppressionversus Temperature

Figure 17. SignalPort Frequency ResponseFigure 18. Carrier Suppression

versus Frequency

Figure 19. Carrier Feedthroughversus Frequency

Figure 20. Sideband Harmonic Suppressionversus Input Signal Level

21IoutVin Vout 0 |VC| 0.5 Vdc21

Iout (Each Sideband)Vin (Signal) Vout 0

Sideband Transadmittance

Signal Port Transadmittance

MC1496, B


500100 4003000 200VC, CARRIER INPUT LEVEL (mVrms)

fC = 10 MHz

0

60

50

40

30

20

10

70

CSV

, CAR

RIER

SUP

PRES

SION

(dB)

2fC fS

2fC 2fS

3fC fS

fC, CARRIER FREQUENCY (MHz)50101.0 5.00.05 0.1 0.5

0

60

50

40

30

20

10

70SUPP

RESS

ION

BELO

W E

ACH

FUND

AMEN

TAL

CARR

IER

SIDE

BAND

(dB)

Figure 21. Suppression of Carrier HarmonicSidebands versus Carrier Frequency

Figure 22. Carrier Suppression versusCarrier Input Level

fC = 500 kHz

OPERATIONS INFORMATIONThe MC1496, a monolithic balanced modulator circuit, is

shown in Figure 23.This circuit consists of an upper quad differential amplifier

driven by a standard differential amplifier with dual currentsources. The output collectors are crosscoupled so thatfullwave balanced multiplication of the two input voltagesoccurs. That is, the output signal is a constant times theproduct of the two input signals.

Mathematical analysis of linear ac signal multiplicationindicates that the output spectrum will consist of only the sumand difference of the two input frequencies. Thus, the devicemay be used as a balanced modulator, doubly balanced mixer,product detector, frequency doubler, and other applicationsrequiring these particular output signal characteristics.

The lower differential amplifier has its emitters connectedto the package pins so that an external emitter resistancemay be used. Also, external load resistors are employed atthe device output.

Signal LevelsThe upper quad differential amplifier may be operated

either in a linear or a saturated mode. The lower differentialamplifier is operated in a linear mode for most applications.

For lowlevel operation at both input ports, the outputsignal will contain sum and difference frequency components

and have an amplitude which is a function of the product ofthe input signal amplitudes.

For highlevel operation at the carrier input port and linearoperation at the modulating signal port, the output signal willcontain sum and difference frequency components of themodulating signal frequency and the fundamental and oddharmonics of the carrier frequency. The output amplitude willbe a constant times the modulating signal amplitude. Anyamplitude variations in the carrier signal will not appear in theoutput.

The linear signal handling capabilities of a differentialamplifier are well defined. With no emitter degeneration, themaximum input voltage for linear operation is approximately25 mV peak. Since the upper differential amplifier has itsemitters internally connected, this voltage applies to thecarrier input port for all conditions.

Since the lower differential amplifier has provisions for anexternal emitter resistance, its linear signal handling rangemay be adjusted by the user. The maximum input voltage forlinear operation may be approximated from the followingexpression:

V = (I5) (RE) volts peak.This expression may be used to compute the minimum

value of RE for a given input voltage amplitude.

SignalInput

CarrierInput 8 (+)

500500 50014VEE

Bias

VC

(Pin numbersper G package)

Vo,Output

() 12

2 GainAdjust3

(+) 6

VS

10 ()

4 ()1 (+)

5

Vo

Re 1.0 k2

12 Vdc

RL3.9 k

+Vo

VEE8.0 Vdc

6.8 kI5

14

0.1 F

12

MC14966

8

1.0 k1.0 k

50 k

51

10 k10 k

0.1 FCarrierInput

ModulatingSignalInput

VS

VC

Carrier Null

51

3

51

4110

5

RL3.9 k

Figure 23. Circuit Schematic Figure 24. Typical Modulator Circuit

MC1496, B


Figure 25. Voltage Gain and Output Frequencies

Carrier Input Signal (VC) Approximate Voltage Gain Output Signal Frequency(s)

Lowlevel dcRL VC

2(RE 2re) KTq

fM

Highlevel dcRL

RE 2refM

Lowlevel acRL VC(rms)

2 2 KTq (RE 2re)fC fM

Highlevel ac0.637 RLRE 2re

fC fM, 3fC fM, 5fC fM, . . .

NOTES: 1. Lowlevel Modulating Signal, VM, assumed in all cases. VC is Carrier Input Voltage.2. When the output signal contains multiple frequencies, the gain expression given is for the output amplitude of

each of the two desired outputs, fC + fM and fC fM.3. All gain expressions are for a singleended output. For a differential output connection, multiply each

expression by two.4. RL = Load resistance.5. RE = Emitter resistance between Pins 2 and 3.6. re = Transistor dynamic emitter resistance, at 25C;

re26 mVI5 (mA)

7. K = Boltzmanns Constant, T = temperature in degrees Kelvin, q = the charge on an electron.KTq 26 mV at room temperature

The gain from the modulating signal input port to theoutput is the MC1496 gain parameter which is most often ofinterest to the designer. This gain has significance only whenthe lower differential amplifier is operated in a linear mode,but this includes most applications of the device.

As previously mentioned, the upper quad differentialamplifier may be operated either in a linear or a saturatedmode. Approximate gain expressions have been developedfor the MC1496 for a lowlevel modulating signal input andthe following carrier input conditions:

1) Lowlevel dc2) Highlevel dc3) Lowlevel ac4) Highlevel acThese gains are summarized in Figure 25, along with the

frequency components contained in the output signal.

APPLICATIONS INFORMATIONDouble sideband suppressed carrier modulation is the

basic application of the MC1496. The suggested circuit forthis application is shown on the front page of this data sheet.

In some applications, it may be necessary to operate theMC1496 with a single dc supply voltage instead of dualsupplies. Figure 26 shows a balanced modulator designedfor operation with a single 12 Vdc supply. Performance of thiscircuit is similar to that of the dual supply modulator.

AM ModulatorThe circuit shown in Figure 27 may be used as an

amplitude modulator with a minor modification.

All that is required to shift from suppressed carrier to AMoperation is to adjust the carrier null potentiometer for theproper amount of carrier insertion in the output signal.

However, the suppressed carrier null circuitry as shown inFigure 27 does not have sufficient adjustment range.Therefore, the modulator may be modified for AM operationby changing two resistor values in the null circuit as shown inFigure 28.Product Detector

The MC1496 makes an excellent SSB product detector(see Figure 29).

This product detector has a sensitivity of 3.0 microvoltsand a dynamic range of 90 dB when operating at anintermediate frequency of 9.0 MHz.

The detector is broadband for the entire high frequencyrange. For operation at very low intermediate frequenciesdown to 50 kHz the 0.1 F capacitors on Pins 8 and 10should be increased to 1.0 F. Also, the output filter at Pin 12can be tailored to a specific intermediate frequency and audioamplifier input impedance.

As in all applications of the MC1496, the emitter resistancebetween Pins 2 and 3 may be increased or decreased toadjust circuit gain, sensitivity, and dynamic range.

This circuit may also be used as an AM detector byintroducing carrier signal at the carrier input and an AM signalat the SSB input.

The carrier signal may be derived from the intermediatefrequency signal or generated locally. The carrier signal maybe introduced with or without modulation, provided its level issufficiently high to saturate the upper quad differential

MC1496, B


amplifier. If the carrier signal is modulated, a 300 mVrmsinput level is recommended.Doubly Balanced Mixer

The MC1496 may be used as a doubly balanced mixerwith either broadband or tuned narrow band input and outputnetworks.

The local oscillator signal is introduced at the carrier inputport with a recommended amplitude of 100 mVrms.

Figure 30 shows a mixer with a broadband input and atuned output.Frequency Doubler

The MC1496 will operate as a frequency doubler byintroducing the same frequency at both input ports.

Figures 31 and 32 show a broadband frequency doublerand a tuned output very high frequency (VHF) doubler,respectively.Phase Detection and FM Detection

The MC1496 will function as a phase detector. Highlevelinput signals are introduced at both inputs. When both inputsare at the same frequency the MC1496 will deliver an outputwhich is a function of the phase difference between the twoinput signals.

An FM detector may be constructed by using the phasedetector principle. A tuned circuit is added at one of the inputsto cause the two input signals to vary in phase as a functionof frequency. The MC1496 will then provide an output whichis a function of the input signal frequency.

VS

DSB

MC1496

VCC12 Vdc

R1

+

Carrier Input60 mVrms

CarrierInput

1.0 k1.0 k

Carrier Null

Carrier Adjust

1.0 k

Re 1.0 k2RL

3.9 k3 RL3.9 k

Vo

+Vo

12

6

6.8 kI5VEE8.0 Vdc

10 k10 k 51 51Modulating

SignalInput

VC

14 5

0.1 F

0.1 F

50 k+

MC1496

Output

0.1 F

0.1 F0.1 F

VCC12 Vdc

10 k 100 100

10 k

3.0 k 3.0 k1.0 k

1.3 k820

50 k10 k

10 F15 V

Signal Input300 mVrms

Modulating

CarrierNull

+25 F15 V 51

25 F15 V

2 3

14 5

ModulatingSignalInput

VS

VC

1.0 F

CarrierInput

50 k750 51 51750

VEE8.0 Vdc

15 6.8 k

RL3.9 k

Re 1.0 k2 3

14 5

0.1 F

Vo

+Vo

VCC12 Vdc

51

51

1.0 k1.0 k

MC1496

2 3

14 5

MC1496

1.3 k820

1.0 k

Carrier Input300 mVrms

SSB Input

51100 3.0 k 3.0 k

0.005F10 k

0.1F

1.0 k

0.1 F 0.1 F

0.1 F

0.1 F

VCC12 Vdc

AFOutput

RL 10 k

0.005F

TYPICAL APPLICATIONS

1.0 k

8

41

10

12

6

12

6

12

6

RL3.9 k

8

41

10

8

41

108

41

10

Figure 26. Balanced Modulator(12 Vdc Single Supply) Figure 27. Balanced ModulatorDemodulator

Figure 28. AM Modulator CircuitFigure 29. Product Detector

(12 Vdc Single Supply)

1.0 k

0.005F

MC1496, B


(f +

2f )

C

S

C

S

C

S

RFC100 H

(2f

2f )

fCfS

fC fS

fC nfSnfC

nfC nfS

DEFINITIONS

Figure 30. Doubly Balanced Mixer(Broadband Inputs, 9.0 MHz Tuned Output) Figure 31. LowFrequency Doubler

Frequency Balanced Modulator Spectrum

L1 = 44 Turns AWG No. 28 Enameled Wire, Woundon Micrometals Type 446 Toroid Core.

VCC+8.0 Vdc1.0 k1.0 k

Null Adjust

0.001 F

512 3

5

6.8 kVEE8.0 Vdc

10 k 5151

10 k

MC1496

0.001 FLocal

OscillatorInput

RF Input100 mVrms

50 k

0.001 F9.5 F

L15.080

pF 90480 pF

9.0 MHzOutputRL = 50

0.01F

VCC12 Vdc

3.9 k3.9 k

5

2 3

MC1496

6.8 kI5

VEE8.0 Vdc

1.0 k

10 k 10 k

100

100

100 F 15 Vdc

100 F25 Vdc

+

+

100C2

100 F15 Vdc Max

1.0 k

1.0 k

C2

50 k

Balance

Input15 mVrms

L1 = 1 Turn AWGNo. 18 Wire, 7/32 IDBalance

MC1496

300 MHzOutputRL = 50

1.010 pF

L118 nH

RFC0.68 H

0.001F0.001

F

1.0 k1.0 kVCC+8.0 Vdc

Output

100

0.001 F150 MHz

Input

10 k10 k 100

50 k

2 3

18 pF

6.8 k

AMPL

ITUD

E

(f ) C

C

S

100

V+

VEE8.0 Vdc

(f

2f )

C

S

(f

f )

(f +

f )

(2f

2f

)

(2f +

2f )

(2f +

2f

)

(3f

2f

)(3f

f

)(3f

)(3f

+ f

)(3f

+

2f )

C

C

S

C

S

C

S C

S

C

S C

S

C

S

(2f ) C

8

41

10

12

68

4110

8

41

10

12

6

14 5

14

14

12

6

Figure 32. 150 to 300 MHz Doubler

Carrier FundamentalModulating SignalFundamental Carrier Sidebands

Fundamental Carrier Sideband HarmonicsCarrier HarmonicsCarrier Harmonic Sidebands

1.010 pF

MC1496, B


OUTLINE DIMENSIONS

NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.2. CONTROLLING DIMENSION: MILLIMETER.3. DIMENSIONS A AND B DO NOT INCLUDE

MOLD PROTRUSION.4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)

PER SIDE.5. DIMENSION D DOES NOT INCLUDE DAMBAR

PROTRUSION. ALLOWABLE DAMBARPROTRUSION SHALL BE 0.127 (0.005) TOTALIN EXCESS OF THE D DIMENSION ATMAXIMUM MATERIAL CONDITION.

A

B

G

P 7 PL

14 8

71M0.25 (0.010) B M

SBM0.25 (0.010) A ST

T

FR X 45

SEATINGPLANE

D 14 PL K

C

JM

DIM MIN MAX MIN MAXINCHESMILLIMETERS

A 8.55 8.75 0.337 0.344B 3.80 4.00 0.150 0.157C 1.35 1.75 0.054 0.068D 0.35 0.49 0.014 0.019F 0.40 1.25 0.016 0.049G 1.27 BSC 0.050 BSCJ 0.19 0.25 0.008 0.009K 0.10 0.25 0.004 0.009M 0 7 0 7 P 5.80 6.20 0.228 0.244R 0.25 0.50 0.010 0.019

NOTES:1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE

POSITION AT SEATING PLANE AT MAXIMUMMATERIAL CONDITION.

2. DIMENSION L TO CENTER OF LEADS WHENFORMED PARALLEL.

3. DIMENSION B DOES NOT INCLUDE MOLDFLASH.

4. ROUNDED CORNERS OPTIONAL.1 7

14 8

B

A

F

H G DK

C

N

L

J

MSEATINGPLANE

DIM MIN MAX MIN MAXMILLIMETERSINCHES

A 0.715 0.770 18.16 19.56B 0.240 0.260 6.10 6.60C 0.145 0.185 3.69 4.69D 0.015 0.021 0.38 0.53F 0.040 0.070 1.02 1.78G 0.100 BSC 2.54 BSCH 0.052 0.095 1.32 2.41J 0.008 0.015 0.20 0.38K 0.115 0.135 2.92 3.43L 0.300 BSC 7.62 BSCM 0 10 0 10 N 0.015 0.039 0.39 1.01

D SUFFIXPLASTIC PACKAGE

CASE 751A03(SO14)ISSUE F

P SUFFIXPLASTIC PACKAGE

CASE 64606ISSUE L

MC1496, B


Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regardingthe suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, andspecifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters which may be provided in Motoroladata sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicalsmust be validated for each customer application by customers technical experts. Motorola does not convey any license under its patent rights nor the rights ofothers. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or otherapplications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injuryor death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorolaand its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney feesarising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges thatMotorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an EqualOpportunity/Affirmative Action Employer.

How to reach us:USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; TatsumiSPDJLDC, 6F SeibuButsuryuCenter,P.O. Box 20912; Phoenix, Arizona 85036. 18004412447 or 6023035454 3142 Tatsumi KotoKu, Tokyo 135, Japan. 038135218315

MFAX: [email protected] TOUCHTONE 6022446609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://DesignNET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 85226629298

MC1496/D

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