Materials Science 4

Materials Science PVEnn MellikovSolar cell

Polycrystalline Si

Tecturing of surface

Thin film solar cell

Cu(InGa)Se2-based solar cells have often been touted as being among the most promising of solar cell technologies for cost-effective power generation. This is partly due to the advantages of thin films for low-cost, high-rate semiconductor deposition over large areas using layers only a few microns thick and for fabrication of monolithically interconnected modules. Perhaps more importantly, very high efficiencies have been demonstrated with Cu(InGa)Se2 at both the cell and the module levels. Cross section of a Cu(lnGa)Se2 solar cell

The unit cell of the chalcopyrite lattice structure

Ternary phase diagram f the Cu-In-Se system

Pseudobinary In2Se3-Cu2Se phase diagram

Defect levels in CuInSe2

Electronic levels of intrinsic defects in CuInSe2. On the left side the theoretical values are presented and on the right side experimentally reported values are presented. The height of histogram columns on the right side represents the spread in experimental data.Multisource elemental coevaporation camera

Relative metal fluxes and substrate temperature for different coevaporation processes stivity

Chemical bath deposition

Chemical bath deposition Deposition of CdS buffer layers on Cu(InGa)Se2 is generally made in an alkaline aqueous solution (pH> 9) of the following three constituents: 1. a cadmium salt; for example, CdS04, CdCl2, CdI2, Cd(CH3COO)2 2. a complexing agent; commonly NH3 (ammonia) 3. a sulphur precursor; commonly SC(NH2)2 (thiourea). Choise of buffer layer materials

The lattice spacing of the (112) planes of CuIn1-xGaxSe2 and the (111) cubic or the (002) bexagonal planes of Cd1-xZnxSAlternative buffer layers

SC parameters

SC parameters

Adsorbtsion of light

Absorption of light with different wavelenghts in Cu(InGa)Se2 with x=0.2Band diagram of a ZnO/CdS/Cu(InGa)Se2 device at 0 V in the dark

Parameters of Solar cells

Parameters of solar cells

Efficiency ( ) and Voc () as a function of Cu(InGa)Se2 band gap, varied by increasing the relative Ga content, The dashed line has slope Voc/ Eg = 1