material growth & characterization for conventional
TRANSCRIPT
Material Growth & Characterization for Conventional & Nanoelectronic Devices Applications: An Innovative Prospective
Technology of Next Level driven through innovation
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COMPANY OVERVIEW
Use relevant image4 to tell
the problem you are solving
Atomistic TCAD Full Flow
Radiation Monitoring System
Night Vision & Border Surveillance
Medical Radiation Dosimetry
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Praveen SaxenaPh.D,. IIT BHU
Pankaj SrivastavaPh.D,. IBHU
AnshuSaxenaMCA. IGNOU
Anshika SrivastavaM.Tech, France
Founder & CEO CPO Co-founder & Director Engg. Manager
CORE TEAM MEMBERS
TCAD Expert Experience 15
years
TCAD Expert Experience 15
years
Material Scientist Experience 10+
years
Material Scientist Experience 10+
years
Software Engineering 7+ years
Software Engineering 7+ years
Nuclear Scientist 3+ years
Nuclear Scientist 3+ years
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FanishGuptaM.Tech, IIIT G
Engg. Manager
Device Expert3+ years
Device Expert3+ years
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ATOMISTIC TCAD TOOLS
Material Epitaxial Growth based on MBE/MOCVD Software
Electronic Band Structure Software
ElecMobSoftware
Particle Device Simulator Software
THz Spectroscopy Software
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CRYSTAL GROWTH
Epitaxial Growth of Group IV, III‐V & II‐VI Semiconductors
Based on MBE, MOCVD and CVD
Reactors
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CRYSTAL GROWTH
1. Bulk Crystal Growth
State of the art device technologies depends on:Purity & Perfection of the crystalsLimited to Si, GaAs and
upto some extent for InP
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EPITAXIAL GROWTH CHALLENGES
Development of psuedo‐ AlNmonolayers over Si
*E.T. Yu, J.O. McCaldin, T.C. McGill, Band offsets in semiconductor heterojunctions, in: E. Henry, T. David (Eds.), Solid State Physics, Academic Press, 1992, pp. 1–146
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CRYSTAL GROWTH
(MOMBE)(MOCVD)
Techniques can grow far from equilibrium systems reliably
Atomically abrupt interfaces
High quality material
Expensive growth technology ????
LPE
high quality material
growth Near eqb growth precise
compositions
pRelatively inexpensive
Difficult to grow abrupt
heterostructures
Unable to grow immiscible alloys
VPE
Extremely high purity material
Not suited for heterostructures
(MBE)
2. Epitaxial Growth Semiconductor technologies dependent on non ideal substrates Lot of Technological Challenges and issues
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EPITAXIAL GROWTH CHALLENGES
Group IV, III‐V, II‐VI epi‐growth with multi components Point defects, e.g. vacancies, interstitial atoms Extended defects within the film, generally dislocations and stacking faults Dislocations: reduce or relax strain through lattice mismatch or thermal expansion differences.
Substrate Si Al2O3 SiC Bulk GaN
AlN
Lattice Mismatch (%) 17 16 3.4 ‐ 2.5
Thermal Conductivity (W/mm‐k) 150 35 490 260 319
Resistivity (ohm‐cm) 104 1014 ~1012 ‐ >1014
E.g. GaN growth over various substrates: Defects
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GROWTH SOLUTION
Inbuilt ReactorsMBEMOCVD CVD
Innovative Atomistic Reactor Simulation
Thick / Thin Film
Growth
Users Growth Condi-tions
Surface Profile
(Rough, Smooth)
Surface Profile
(Rough, Smooth)
Defects (Points, Clusters, voids)
Defects (Points, Clusters, voids)
Strain/ Stress Profile
TNL Frame work
OptimizerAtomistic
EpiGrowth
Simulator
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GROWTH SOLUTION
Schwoebel barrier: The atom diffusesfrom the site exactly above the edge atom tothe site immediately next to the edge atom, Incorporation barrier: The atomincorporates into the edge on the samesurface level.
Strain: (a – a0) / a0 Sticking coefficient:
Total Rates: RT = Rads + Rhop + RdesHere ads ~ adsorption Rate on substrate , Hop ~ hopping rate on substrateDes ~ desorption rate Side view for the case of Schwoebel barrier (a) and that of incorporation barrier (b),
where the white atom is the diffusing one.
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CVD/MOCVD EPIGROWTH
Gas‐phase Mechanisms:
Surface phase Mechanisms:
Surface phase Mechanisms: PATH 2
Surface phase Mechanisms: PATH 3
Chemical Composition of compound on the surface
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Controlled Epitaxial Growth of GaAs in real MOCVD Reactor Environment*
*P. K. Saxena, P. Srivastava, R. Trigunayat, An innovative approach for controlled epitaxial growth of GaAs in real MOCVD reactor environment, Journal of Alloys and Compounds 809 (2019) 151752.
CASE STUDY
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MOCVD GaAs over GaAs
* Journal of Alloys and Compounds 809 (2019) 151752.
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MOCVD GaAs over GaAs
* Journal of Alloys and Compounds 809 (2019) 151752.
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Material Characterization of thin/thick Film
Electronic Band Structure & Electronic Transport
Praveen K Saxena at. el., An Innovative Model for Electronic Band Structure Analysis of doped and un‐doped ZnO, Journal of Electronic Materials vol. 50 (4), pp. 2417‐2424, 2021.
Anshika Srivastava, Anshu Saxena, Praveen K. Saxena, F. K.Gupta, Priyanka Shakya, at. el., An innovative technique for electronic transport model of group‐III nitrides, Scientific Reports nature research (2020) 10:18706.
Praveen K Saxena at. el., Full Electronic Band Structure Aanalysis of Cd Doped ZnO Thin Film Deposited by SOL‐GEL Spin Coating Method , proceedings of 2019 US Workshop on II‐VI Materials, 2019.
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Full Band Structure
IV, III‐V and II‐VI alloysVCA for ternary alloysDisorder contributionParabolicity effectsMain valleys energiesEffective masses, carrier group
velocity, DOS etc.
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ZnO: Full Band Simulator
DFT Methods
LDA PBE HSE06 LDA+U Experimental This Work
a (Å) 3.2103 3.2844.5 3.2624.5 3.1976 3.25319-21 3.254
c (Å) 5.1363 5.2964.5 5.2124.5 5.1546 5.20519-21 5.21
u 0.380 0.378 0.381 0.378 0.380 0.380P* 0.000 0.002 -0.001 0.002 0.000 0.000
Eg (eV) 0.79413 3.4134.5 2.4644.5 1.15416 3.443-5 3.428
Different DFT based calculated energy band gap of ZnO materials within the conventional DFT (LDA and PBEfunctional), LDA + U functional, and hybrid functional (HSE06) along with the lattice parameters, structuralinternal parameters (u) and disorder constants (P). The calibrated energy gap of ZnO materials using FullBandsimulator and Experimental band gap are also included for comparison.
* Journal of Electronic Materials
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ZnO: Full Band Simulator
ZnO SamplestDS (nm)
tWH
(nm)Strain
Lattice Constant
Internal Parameter
Bond Length (Å)
Optical Band gap (eV)
Simulated Band gap
(eV)(100) (002) (101) a (Å) c (Å)u(P)
Undoped 11 18 10 26 6.5×10-3 3.246 5.238 0.398 2.013 3.22 3.220.45at.% Cd 16 20 17 13 -8.0 ×10-3 3.328 5.190 0.4023 2.009 3.20 3.190.51at.% Cd 19 21 19 26 1.5 ×10-3 3.332 5.161 0.4025 2.007 3.19 3.220.56at.% Cd 11 18 10 31 10.0 ×10-3 3.313 5.225 0.4040 2.006 3.15 3.15
1at.% Sr 14 10 17 7.48 -1.64×10-2 3.256 5.194 0.389 1.978 3.25 3.272at.% Sr 21 9 16 10.27 4.27×10-2 3.251 5.194 0.389 1.976 3.26 3.263at.% Sr 9 6 6 4.14 9.95×10-2 3.271 5.223 0.389 1.988 3.28 3.331at.% Fe 5 8 9 1.43 -14.8×10-2 3.236 5.194 0.380 1.967 3.24 3.262at.% Fe 3 5 7 0.65 -34.5×10-2 3.231 5.194 0.380 1.968 3.26 3.253at.% Fe 8 5 7 9.06 6.6×10-2 3.231 5.186 0.380 1.970 3.29 3.25
Undoped, Cd, Sr and Fe doped ZnO thin films (Sol gel) along with optical and simulated energy band gaps
* Journal of Electronic Materials
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Group‐III Nitrides
Material Reported values of Eg
ELDA ELDA-1/2 DFTPBE DFTHSE Experiments EThis work
AlN 6.547, 6.2310 4.505,7 6.065 4.137, 4.0220 6.427, 6.2920
6.235, 6.02617, 6.1-6.27,2
6.20
GaN 3.57, 3.50710 2.025, 2.117 3.525 1.697,20 3.557, 3.5520 3.5075, 3.3522, 3.5120 3.47
InN 0.7–1.07,8, 0.7-1.910 -0.035, -0.247 0.955 − 0.427,20 0.867,0.8620 0.7-1.95, 0.6-0.720 0.7
Al0.2Ga0.8N 3.99* 2.3535 3.9515 4.57012 4.56912 3.96224 3.94
In0.2Ga0.8N 2.72-2.78* 1.525 2.765 2.2725 1.92512 2.62523 2.66
In0.2Al0.8N 4.7 - 4.76* 3.4315 4.4095 3.44512 2.97612 4.51525 4.71
Energy difference obtained using FullBand simulator based on the proposed model compared withthose reported earlier, with those computed from reported various density functional theory (DFT)techniques and with experimental results
* Scientific Reports, Nature Journal
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ELECTRONIC TRANSPORT
Free Electrons For free particles, the electron wave function is the solution to the time‐independent Schrödinger equation:
The solutions form the basis of plane waves:
The velocity, v, of a particle represented by a wave packet centered around the crystal momentum, k, obtained from the dispersion relation between k and the energy E as
with
and
The Boltzmann Transport Equation (BTE) is
Here f is the distribution function, E is the electric field, F is the external electromagnetic force.
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SCATTERING MECHANISMS
Scattering Mechanisms
Defect Scattering Carrier-Carrier Scattering Lattice Scattering
CrystalDefects Impurity Alloy
Neutral Ionized
Intravalley Intervalley
Acoustic OpticalAcoustic Optical
Nonpolar PolarDeformationpotential
Piezo-electric
Scattering Mechanisms
Defect Scattering Carrier-Carrier Scattering Lattice Scattering
CrystalDefects Impurity Alloy
Neutral Ionized
Intravalley Intervalley
Acoustic OpticalAcoustic OpticalAcoustic Optical
Nonpolar PolarNonpolar PolarDeformationpotential
Piezo-electric
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GROUP-III NITRIDES
0 50 100 150 200 250 300 350 400 450 500 550 6000.0
5.0x104
1.0x105
1.5x105
2.0x105
2.5x105
3.0x105
3.5x105
4.0x105
4.5x105
5.0x105
5.5x105
Velo
city
(m/S
ec)
Electric Field (kV/m)
AlN (O’Leary et al.) AlN Simulated GaN Experimental GaN Simulated InN (Antanas Reklaitis) InN Simulated
The Comparison of simulated electron driftvelocity as a function of applied electric fieldwith the reported literature. Simulated data displayed as solid lines Experimental results depicted by opencircles, squares and triangles for AlN, GaN andInN
Anshika Srivastava, Anshu Saxena, Praveen K. Saxena, F. K.Gupta, PriyankaShakya, at. el., An innovative technique for electronic transport model of group‐III nitrides, Scientific Reports nature research (2020) 10:18706.
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0 100 200 300 400 500 6000
1x105
2x105
3x105
4x105
5x105
Drif
t Vel
ocity
(m/s
ec)
Electric Field (kV/m)
Al0.2GaN AlN GaN In0.2Ga0.8N In0.2Al0.8N InN
* Scientific Reports, Nature Journal.
GROUP-III NITRIDES
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21.0 21.5 22.0 22.5 23.01000
1050
1100
1150
Doping Density (Nd)
Mob
ility(m
2 /kV-
s)
T=600o C
GaN In0.2Ga0.8N In0.4Ga0.6N
21.0 21.5 22.0 22.5 23.01000
1100
1200
1300
1400
1500
1600
T=450o C
Doping Density (Nd)
Mob
ility
(m2 /k
V-s)
GaN In0.2Ga0.8N In0.4Ga0.6N
21.0 21.5 22.0 22.5 23.01200
1300
1400
1500
1600
1700
1800
1900
Mob
ility
(m2 /k
V-se
c)
Doping Density (Nd)
GaN In0.2Ga0.8N In0.4Ga0.6N
T=300o C
TEMP EFFECT ON MOBILITIES
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MOBILITIES TERNARY COMPOUNDS
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Material Characterization of thin/thick Film
THz Spectroscopy
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Physics
The simulated current is recorded in the time domain and the value of the electric field is known at all thetimes.
To obtain the conductivity as a function of frequency, the current and electric field are converted to thefrequency domain via Fourier transforms
i.e.
Suppose an oscillating electric field with frequency f is applied in the y‐direction and each particle's velocity is recalculated at each time step, where the y‐component of the velocity at time step n is
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*Blank Circles are Experimental Results, Solid line simulated
Ge Room Temp (294K) Absorption (m‐1) Vs. THz Freq at 10 kV/cm & 441 kV/cm
0
200
400
600
800
1000
1200
1400
1.00E+11 3.00E+11 5.00E+11 7.00E+11 9.00E+11
系列1
系列2
Absorptio
n coefficient (m
‐1)
THz Frequency (Hz)
200
250
300
350
400
450
500
550
600
1.00E+11 3.00E+11 5.00E+11 7.00E+11 9.00E+11
系列1
系列2
Absorptio
n coefficient (m
‐1)
THz Frequency (Hz)
CASE STUDY
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Ge Characteristics: @10 kV/cm @ 294K
Scattering Rates (s‐1) w.r.t Energy (eV)
Γ ‐ Valley X ‐ ValleyL ‐ Valley
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Carrier Transitions
Carrier Transitions due to Scattering mechanism at 441 kV/cm
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Ge Characteristics: @10 kV/cm @ CT
Freq. (Hz)
Absorptio
n (m
‐1)
Material: Ge “n doped”
Temperature: 97K
Different THz fields
Absorption coefficient
*Circles are Experimental Results, Solid line simulated
Absorption (m‐1) with respect to THz Freq at 10 kV/cm
0
200
400
600
800
1000
1200
1400
1600
1800
2000
1.00E+11 2.00E+11 3.00E+11 4.00E+11 5.00E+11 6.00E+11 7.00E+11 8.00E+11 9.00E+11 1.00E+12
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Ge Characteristics: @441 kV/cm @ CT
0
100
200
300
400
500
600
700
800
2.00E+11 4.00E+11 6.00E+11 8.00E+11 1.00E+12
系列1
系列2
Freq. (Hz)
Absorptio
n (m
‐1)
Material: Ge “n doped”
Temperature: 97K (CT)
Different THz fields
Absorption coefficient
*Circles are Experimental Results, Solid line simulated
Absorption (m‐1) with respect to THz Freq at 441 kV/cm
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Monte Carlo Particle Device Simulator
Technology of Next Level driven through innovation
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DEVICE MODELING
ElectronicStructure &
LatticeDynamics
TransportModels
DeviceSimulation
Compact ModelDrift DiffusionHydrodynamic
Boltzmann transport(Monte Carlo)
Quantum Hydrodynamics
Quantum Monte CarloWigner-Boltzmann
Green’s function methodDirect solution of Schrodinger
Approximate Easy, fast
Exact Difficult
Qua
ntum
Sem
i Cla
ssic
al
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• Transport of Monte Carlo particles (Superparticles)
• Self‐consistent solution of decoupledPoisson's and BTE equation over a smalltime‐step
• The time step typically less than inverseplasma frequency
• Technologies implemented in Particle DeviceSimulator: MOSFET FDSOI Tunneling FET MESFET HEMT GAA FinFET
• The classification of Particle‐mesh (PM) couplingscheme is included as; Carrier charge assign at mesh nodes through
CIC, NGP, NEC schemes Solution of Poisson's equation on node points
through Successive over Relaxation (SOR)method,
Calculation of the mesh defined electric fieldcomponents,
Interpolation of forces at the particlepositions.
SOLUTION
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CASE STUDIES
GaNFET Simulation
*P. K. Saxena at. el., Atomistic Level Process to Device Simulation of GaNFET Using TNL TCAD Tools, Book Chapter, © Springer Nature (2020) 176, Lecture Notes in Electrical Engineering ISBN 978‐981‐15‐5261‐8 ISBN 978‐981‐15‐5262‐5 (eBook)
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GaNFET Epitaxial Growth
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GaNFET
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GaNFET
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GaNFET
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InGaAs/InP Infrared Photodetector
*P. K. Saxena at. el., Numerical simula on of InxGa1−xAs/InP PIN photodetector for optimum performance at 298 K, Optical and Quantum Electronics (2020) 52:374
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Infrared Detector
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I – V Characteristics
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Infrared Detector
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Quantum Efficiency
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FDSOI MOSFET
*P. K. Saxena at. el., A Comparative Study for Scaling FDSOI Technology up to 7nm –Based on Particle device Simulation, Jaournal of Nano & Optoelectronics(2021), under Review.
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FDSOI MOSFET
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FDSOI MOSFET RESULTSSt
ruct
ure
Para
met
ers Nodes (nm) 14nm 10nm 7nm 14nm 10nm 7nm
Single Gate Double GateLeff (nm) 22 14 10 22 14 10Weff (nm) 10 8 10 8Tox (nm) 1 0.85 0.75 0.75 0.85 0.75
Doping (/cm3) 1×1024 5×1024 2×1025 2×1025 5×1024 2×1025
TSOI (nm) 40 30 20 20 30 20
Dev
ice
Para
met
ers Vth (mV) 0.3 0.22 0.2 0.2 0.4 0.5
SS (/mV/dec) 63.3 67.9 82.9 82.9 87.4 72.2gm (mS/µm) 0.252 0.437 0.499 0.499 0.494 0.449
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DRIFT VELOCITY
Carrier Drift velocity a) 14nm b) 10nm c) 7nm
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CARRIER AVERAGE ENERGY
a) 14nm FDSOI MOSFET b) 10nm FDSOI MOSFET c) 7nm FDSOI MOSFET
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Transfer Id ‐ Vg Characteristics
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Single Gate Id ‐ Vd Characteristics
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Dual Gate Id ‐ Vd Characteristics
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MOSFET
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MOSFET
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MOSFET Transfer Characteristics
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Tunneling FET
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Tunneling FET
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Tunneling FET Transfer Characteristics
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StructureMESFET
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MESFET
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ADVANCE LICENSING & PRICE VALUE
TNL’s tools support advanced and unique licensing models tailored for unique customer needs.
ADVANCED LICENSING OPTIONS: Term‐Based Perpetual TCAD Academic Suite 24x7 Technical Support for Academic Institutions
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T h a n k Y o uC o n t a c t u s
+91-983-915-1284
info@technext lab .com
Lucknow 226 003 , INDIA
www.technext lab .com
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