mask infrastructure development - sematech€¦ · mask infrastructure development ... psm...
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Kurt R. KimmelMask Strategy Program ManagerDecember 12, 2001
Mask Infrastructure Development
157nm Lithography Data Review
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95 97 99 02 05 08 11
1994 SIA
1997 SIA
1998 / 1999 ITRS
Min
imum
Fea
ture
Siz
e (n
m)
(DR
AM
Hal
f-Pitc
h)
500
350
250
180
130
100
70
50
35
2595 97 99 02 05 08 11
ISMT Litho 2001 Plan(2-year cycle to 50nm)
ITRS Roadmap w/ Mask Infrastructure
2000/2001 ITRSMask Infrastructure
Available
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Mask Infrastructure Summary
CARs seem extendibleResist
Multiple (4) suppliers developingPSM substrates
Unresolved issuePellicle
FEI tool 2H04Repair
Multiple SEM suppliers. AFM development Project at ISMT.
Metrology
KLA-T Terascan 577HR Dec03. Needs pellicle decision.
Inspection
Multiple (6) optionsPattern Generators
Multiple (4) suppliers readyBinary substrates
Pursuing IMS MOPXE proposal participationDatapath
70nm GR / 157nm Litho NodeMask Issue
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Data PathRef: ITRS shows projected 324 GB data volume
• Format optimization: SEMI Task Force– Data volume minimization
• Description method• Hiearchy and preservation• Verification
• Data handling– Transfer protocol– Mask order entry– Automated production and engineering control– Logistics
! Much addressed in MOPXE program: Luc DeRidder
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Schematic Data-Prep Process FlowCircuit
Design
Mask Layout•Layer extraction•Scaling & Shrinking•RET (OPC, PSM,…)•Fracturing?•Job composition
Mask Making•Tonality, Mirroring•Sizing, PEC•Fracturing/Conversion•Job finishing
INPUT DATA (GDS II)
mask
Job composition and data files are transferred to mask-maker.
What format?
FAB PARAMETERS
Order entry, data prep and handling for inspection, metrology, repair,
and repair verification
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Materials (Jerry Cullins)
• Mask-making resist– Multiple CARs extendible to support 70nm node
• Glass blanks– Multiple commercial supplier options
• Binary attenuator– Multiple commercial supplier options
• Attenuated phase shifting substrates– Multiple commercial suppliers developing
100 nm Dense Lines
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Pattern Generators
• Resolution: – Main feature: 160 nm– Clear: 140 nm– Opague: 80 nm
• Mean control: 5.5 nm
• Uniformity: nm, 3 sigma – Isolated line: 4.5 nm– Dense lines: 11 nm– Contacts: 12.5 nm
• Image placement: 15 nm, multi-point
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Future Pattern Generators
• All 6 major suppliers have plans to develop a 70nm node mask pattern generator.
– Etec / AMAT: raster– Hitachi: vector shaped– JEOL: vector shaped– Leica: vector shaped– Micronic: laser spatial light modulator– Toshiba: vector shaped
• Specifications and timing vary.
• Substantial competition raises confidence of successful intercept with the roadmap.
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Basic Inspection Specifications
• Minimum Inspected Feature: 160 nm
• Minimum OPC Feature:– Clear: 140 nm– Opague: 80 nm
• Sensitivity for transmission defect: 55 nm
• Sensitivity to phase defect: <60 degrees ?
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Inspection Supplier Options • Alternate Supplier Investigation Completed:
– Inspection tool suppliers presented their strategies and roadmaps at the private May 9th
2001 International SEMATECH MASC meeting• Etec, an Applied Materials Company • Lasertec• NEC• Toshiba Machine• KLA-Tencor
– Conclusion• Multiple suppliers are developing systems for the 70nm
ground rule mask node.– Issue
• Type of pellicle dramatically impacts inspection optics design.
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Mask Inspection: KLA-Tencor DUV• KLA-Tencor Terascan DUV tool current delivery schedule:
– Model 525 D:D 100nm GR Oct. 2002– Model 575 D:DB 100nm GR Jan. 2003– Model 577 HR Beta D:DB 80nm GR Sept. 2003– Model 577 HR Prod D:DB 70nm GR Dec. 2003
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Alternating PSM InspectionObjective:Develop the KLA-Tencor 5xx-DUV mask inspection
tool capability to meet the ISMT members 100nm ITRS Node AltPSM mask inspection requirements.
Partner: KLA-TencorApproach:Evolutionary enhancement of the 5XX Terascan-
DUV System Deliverables: AltPSM Deliverables
– Terastar D:D 130nm UV - Q3 2001– Terastar D:DB 130nm UV - Q2 2002– Terascan D:DD 100nm DUV - Q3 2002– Terascan D:DB 100nm DUV - Q1 2003
Extendibility to 70nm ground rule, 157nm shifter depth? TBD…
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Basic CD Metrology Specifications
• Minimum Feature: 160nm
• Mean to target: 5.5 nm Accuracy: 1 nm
• Uniformity: 3 sigma Precision: 1-3 nm– Isolated line: 4.5 nm– Dense lines: 11 nm– Contacts: 12.5 nm
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Metrology Focus: AFM method and Carbon Nano-Tube (CNT) Development• Method for attachment angle determination
has been developed
• Rapid evaluation method of tip properties
• Optimization of CNT growth reactor & process then cost-effective commercialization
• CNT cross-platform and sample investigation
• FIB milling of Si tips: Several approaches are being tried
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Wear Studies
CNT was scanned for 12 hrs across test pattern(speed: 10µm/sec)
This represents ~40 cm scan distance
No apparent lengthchangebefore use after 12 hrs
Test Structure
USF / UCF Sensitive
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AIMS 157nm: System Specifications• Mask Types:
– Binary– Attenuated PSM– Alternating PSM
• Mask Size:– 6 “ square – 230 mm square
• Mask Exposure Wavelength: 157 nm • Mask Reduction Factor: 4x or 5x• Numerical Aperture Range: 0.6 to 0.92 • Partial Coherence Range: 0.25 to 1.00• Minimum Detectable Defect Size: 55 nm• Field Illumination Stability: < 5%• Field Illumination Uniformity: < 1.5%
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AIMS157nm Key DatesAlpha tool:"MS#2: Requirements defined 02/01"MS#4: Design completed 10/01– MS#5: alpha tool built 02/02
Beta tool:"MS#3: Requirements defined 09/01– MS#6: Design completed 02/02– MS#9: beta tool built 02/03
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New Platform for Alpha Tool
MSM193 AIMS fab
Alpha tool will be based on AIMS fab platform- mechanical stability - potential for automation- no platform / software change from αααα−−−− to ββββ−−−−tool
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Basic FIB Mask Repair Specifications• Develop chemistry and process compatible with 157
nm Lithography – Low transmission loss: >95%
• Develop platform with 70nm GR capability– Minimum defect size to repair: 56 nm– Minimum pattern feature size: 160 nm, 320 nm contact – Edge placement accuracy: +/- 7 nm– Substrate damage: 8 nm
• Develop chemistry and processes effective on various 157nm lithography mask materials
– Binary attenuators– Various phase-shifting attenuators– Quartz
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Tool Availability
• FEI under contract to ISMT: 2H04 tool
• Seiko Instruments developing a 70nm ground rule tool
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Mask Infrastructure Summary
CARs seem extendibleResist
Multiple (4) suppliers developingPSM substrates
Unresolved issue Pellicle
FEI tool 2H04Repair
Multiple SEM suppliers. AFM development Project at ISMT.
Metrology
K-T 577 HR Dec03. Needs pellicle decision.Inspection
Multiple (6) optionsPattern Generators
Multiple (4) suppliers readyBinary substrates
Pursuing IMS MOPXE proposal participationDatapath
70nm GR / 157nm Litho NodeMask Issue