m mdv1528 - magnachip.com trench mosfet 30v, 16a, 1 8. m ... mdv1528 is suitable for dc/dc converter...
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May. 2011. Version1.3 MagnaChip Semiconductor Ltd. 1
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Absolute Maximum Ratings (Ta = 25oC)
Characteristics Symbol Rating Unit
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current (1)
TC=25oC (Silicon limited)
ID
26.4
A TC=25
oC (Package limited) 16
TC=70oC 16
TA=25oC 10.1
(3)
TA=70oC 8.1
(3)
Pulsed Drain Current IDM 60 A
Power Dissipation
TC=25oC
PD
23.1
W TC=70
oC 14.8
TA=25oC 3.4
(3)
TA=70oC 2.2
(3)
Single Pulse Avalanche Energy (2)
EAS 20 mJ
Junction and Storage Temperature Range TJ, Tstg -55~150 oC
Thermal Characteristics
Characteristics Symbol Rating Unit
Thermal Resistance, Junction-to-Ambient (1)
RθJA 36 oC/W
Thermal Resistance, Junction-to-Case RθJC 5.4
MDV1528 Single N-channel Trench MOSFET 30V, 16A, 18.8mΩ
Features
VDS = 30V ID = 16A @VGS = 10V RDS(ON)
< 18.8mΩ @VGS = 10V < 27.8mΩ @VGS = 4.5V
100% UIL Tested 100% Rg Tested
General Description The MDV1528 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV1528 is suitable for DC/DC converter and general purpose applications.
D
G
SPDFN33
S S S G G S S S
D D D D D D D D
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Ordering Information
Part Number Temp. Range Package Packing Quantity Rohs Status
MDV1528URH -55~150oC PowerDFN33 Tape & Reel 5000 units Halogen Free
Electrical Characteristics (TJ = 25oC)
Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 30 - - V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.3 1.9 2.7
Drain Cut-Off Current IDSS VDS = 30V, VGS = 0V - - 1
μA TJ=55oC - - 5
Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1
Drain-Source ON Resistance RDS(ON)
VGS = 10V, ID = 8A - 16.3 18.8
mΩ TJ=125oC - 23.6 27.3
VGS = 4.5V, ID = 6A - 23.2 27.8
Forward Transconductance gfs VDS = 5V, ID = 8A - 12.3 - S
Dynamic Characteristics
Total Gate Charge Qg(10V)
VDS = 15.0V, ID = 8A, VGS = 10V
5.1 7.3 9.5
nC Total Gate Charge Qg(4.5V) 2.4 3.5 4.5
Gate-Source Charge Qgs - 1.5 -
Gate-Drain Charge Qgd - 1.3 -
Input Capacitance Ciss
VDS = 15.0V, VGS = 0V, f = 1.0MHz
319 456 593
pF Reverse Transfer Capacitance Crss 30 42 56
Output Capacitance Coss 61 88 114
Turn-On Delay Time td(on)
VGS = 10V, VDS = 15.0V, ID = 8A, RG = 3.0Ω
- 5.5 -
ns Rise Time tr - 3.2 -
Turn-Off Delay Time td(off) - 13.8 -
Fall Time tf - 2.9 -
Gate Resistance Rg f=1 MHz 1.0 3.0 4.0 Ω
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 8A, VGS = 0V - 0.85 1.1 V
Body Diode Reverse Recovery Time trr IF = 8A, dl/dt = 100A/μs
- 16.1 24.2 ns
Body Diode Reverse Recovery Charge Qrr - 8.3 12.4 nC
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7)
2. EAS is tested at starting Tj = 25, L = 0.1mH, IAS = 10.8A, VDD = 27V, VGS = 10V..
3. T < 10sec.
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Fig.5 Transfer Characteristics
Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.3 On-Resistance Variation with Temperature
Fig.4 On-Resistance Variation with
Gate to Source Voltage
Fig.6 Body Diode Forward Voltage Variation with Source Current and
Temperature
-50 -25 0 25 50 75 100 125 1500.6
0.8
1.0
1.2
1.4
1.6
1.8
VGS
=10V
ID=8A
RD
S(O
N),
(Norm
aliz
ed)
Dra
in-S
ourc
e O
n-R
esis
tance
TJ, Junction Temperature [
oC]
2 4 6 8 100
10
20
30
40
※ Notes :
ID = 8A
TA = 25
RD
S(O
N) [m
Ω],
Dra
in-S
ourc
e O
n-R
esis
tance
VGS
, Gate to Source Volatge [V]
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
10-1
100
101
TA=25
※ Notes :
VGS
= 0V
I DR, R
eve
rse
Dra
in C
urr
en
t [A
]
VSD
, Source-Drain voltage [V]
0 1 2 3 4 50
4
8
12
16
VGS
, Gate-Source Voltage [V]
TA=25
※ Notes :
VDS
= 5V
I D, D
rain
Cu
rre
nt [A
]
5 10 15 200
5
10
15
20
25
30
VGS
= 10V
VGS
= 4.5V
Dra
in-S
ourc
e O
n-R
esis
tance [mΩ
]
ID, Drain Current [A]
0.0 0.5 1.0 1.5 2.00
5
10
15
20
8.0V
4.5V 3.5V
VGS
= 10V
5.0V
4.0V
3.0V
I D,
Dra
in C
urr
ent
[A]
VDS
, Drain-Source Voltage [V]
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Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs.
Case Temperature
Fig.11 Transient Thermal Response
Curve
0 2 4 6 80
2
4
6
8
10
※ Note : ID = 8A
VG
S,
Ga
te-S
ourc
e V
olta
ge
[V
]
QG, Total Gate Charge [nC]
25 50 75 100 125 1500
10
20
30
I D, D
rain
Curr
ent [A
]
TC, Case Temperature [ ]
10-4
10-3
10-2
10-1
100
101
102
103
10-3
10-2
10-1
100
101
※ Notes :
Duty Factor, D=t1/t
2
PEAK TJ = P
DM * Z
θ JC * R
θ JC(t) + T
C
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Zθ
JC ,
Therm
al R
esponse
t1, Rectangular Pulse Duration [sec]
10-1
100
101
102
10-1
100
101
102
1s
100 ms
DC
10 ms
10s
Operation in This Area
is Limited by R DS(on)
Single Pulse
TJ=Max rated
TC=25
I D, D
rain
Curr
ent [A
]
VDS
, Drain-Source Voltage [V]
0 5 10 15 20 25 300
100
200
300
400
500
600
Ciss
= Cgs
+ Cgd
(Cds
= shorted)
Coss
= Cds
+ Cgd
Crss
= Cgd
※ Notes ;
1. VGS
= 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Ca
pa
cita
nce
[p
F]
VDS
, Drain-Source Voltage [V]
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Package Dimension
PowerDFN33 (3.3x3.3mm)
Dimensions are in millimeters, unless otherwise specified
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DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd.