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LEPSI LEPSI Laboratoire d’ Electronique et de Physique des Systèmes Instrumentaux 1 Wojciech Dulinski [email protected] Pixel 2000, Genova, Italy Pixel Sensors for Single Photon Detection Contents - Idea and basic architecture of a Hybrid Photo Diode (HPD) - HPD application in particle physics experiments -Pixel detectors for X-ray astronomy in space: p-n CCD and DEPFET matrix

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LEPSILEPSI Laboratoire d’Electronique et dePhysique desSystèmesInstrumentaux1

Wojciech Dulinski [email protected] 2000, Genova, Italy

Pixel Sensors for Single Photon Detection

Contents- Idea and basic architecture of a Hybrid Photo Diode (HPD)

- HPD application in particle physics experiments

-Pixel detectors for X-ray astronomy in space: p-n CCD andDEPFET matrix

LEPSILEPSI Laboratoire d’Electronique et dePhysique desSystèmesInstrumentaux2

Wojciech Dulinski [email protected] 2000, Genova, Italy

Hybrid Photo Diode (Hybrid Photo Detector)

LEPSILEPSI Laboratoire d’Electronique et dePhysique desSystèmesInstrumentaux3

Wojciech Dulinski [email protected] 2000, Genova, Italy

Single (visible) photon counting efficiency comes fromlimited QE of HPD photocathode

LEPSILEPSI Laboratoire d’Electronique et dePhysique desSystèmesInstrumentaux4

Wojciech Dulinski [email protected] 2000, Genova, Italy

Highly-segmented silicon sensor with low noise VLSIreadout electronics as an active element of HPD

LEPSILEPSI Laboratoire d’Electronique et dePhysique desSystèmesInstrumentaux5

Wojciech Dulinski [email protected] 2000, Genova, Italy

Next logical step : silicon pixel array bump-bonded to abinary readout chip (LHC1)

M.Alemi et al., CERN-EP/99-110 (1999)

LEPSILEPSI Laboratoire d’Electronique et dePhysique desSystèmesInstrumentaux6

Wojciech Dulinski [email protected] 2000, Genova, Italy

Some remaining problems before having a practicaldevice...

M.Alemi et al., CERN-EP/99-110 (1999)

LEPSILEPSI Laboratoire d’Electronique et dePhysique desSystèmesInstrumentaux7

Wojciech Dulinski [email protected] 2000, Genova, Italy

Potential application for back-illuminated, thinned CMOSAPS devices for HPD integrated sensor

- excellent noise figures- high spatial resolution

LEPSILEPSI Laboratoire d’Electronique et dePhysique desSystèmesInstrumentaux8

Wojciech Dulinski [email protected] 2000, Genova, Italy

Pixel-HPD application : LHCb-RICH detectorM.Albrecht et al., NIM A 442 (2000) 164

LEPSILEPSI Laboratoire d’Electronique et dePhysique desSystèmesInstrumentaux9

Wojciech Dulinski [email protected] 2000, Genova, Italy

Particle tracking using: HPD + scintillating fibres or phosphor scintillator + CMOS Imager

IEEE TNS Vol.43, No.3 June 1996, 2115 TOTEM experiment at CERN LHC

LEPSILEPSI Laboratoire d’Electronique et dePhysique desSystèmesInstrumentaux10

Wojciech Dulinski [email protected] 2000, Genova, Italy

Pixel-HPD application : ISPA (Imaging Silicon PixelArray) Camera for Gamma Rays

D. Puertolas et al., IEEE TNS Vol.42, No.6December 1996, p.2221

LEPSILEPSI Laboratoire d’Electronique et dePhysique desSystèmesInstrumentaux11

Wojciech Dulinski [email protected] 2000, Genova, Italy

ISPA Camera for Gamma Raysenergy resolution (122 keV) and spatial resolution

D. Puertolas et al., IEEE TNS Vol.44, No.6October 1997, p.1747

LEPSILEPSI Laboratoire d’Electronique et dePhysique desSystèmesInstrumentaux12

Wojciech Dulinski [email protected] 2000, Genova, Italy

Fully Depleted pn-CCD

- derivative of the silicon drift detector (Gatti and Rehak, 1983)- JFET electronics integrated (1993)

- large area detectors (1995-1997) for (soft) X-ray astronomy in space

Fully depleted detector volume (silicon, 300 mm thick) +extremely low noise level (ENC ~5 el.) =

high quantum efficiency (single photon counting mode)

LEPSILEPSI Laboratoire d’Electronique et dePhysique desSystèmesInstrumentaux13

Wojciech Dulinski [email protected] 2000, Genova, Italy

pn-CCD : principal features

P.Hall et al., SPIE, 3114: 126-133, 1977C

LEPSILEPSI Laboratoire d’Electronique et dePhysique desSystèmesInstrumentaux14

Wojciech Dulinski [email protected] 2000, Genova, Italy

pn-CCD : QE + Fe spectrum

LEPSILEPSI Laboratoire d’Electronique et dePhysique desSystèmesInstrumentaux15

Wojciech Dulinski [email protected] 2000, Genova, Italy

pn-CCD : for X-ray Astronomy: XMM-NewtonObservatory

LEPSILEPSI Laboratoire d’Electronique et dePhysique desSystèmesInstrumentaux16

Wojciech Dulinski [email protected] 2000, Genova, Italy

Use of a high-energy physics detector technology :Back-illuminated, fully-depleted CCD image sensors

for use on optical and near-IR astronomyD.E.Groom et al, NIM A 442 (2000) 216

LEPSILEPSI Laboratoire d’Electronique et dePhysique desSystèmesInstrumentaux17

Wojciech Dulinski [email protected] 2000, Genova, Italy

DEPFET Pixel Sensor for X-rays

- can be back illuminated, can have a fill factor of 1, can be made verylarge (all pros of CCD)

- does not need a charge transfer, no out-of-time events, every pixel isxy-addressable (all pros of APS)

- in addition, can have a non destructive multiple readout to reach verylow noise figures

Device concept: combination of FET

transistor with sidewarddepletion (drift chamber) J.Kemmer, G.Lutz et al. NIM A 288 (1990) 92

LEPSILEPSI Laboratoire d’Electronique et dePhysique desSystèmesInstrumentaux18

Wojciech Dulinski [email protected] 2000, Genova, Italy

DEPFET as pixel detector

LEPSILEPSI Laboratoire d’Electronique et dePhysique desSystèmesInstrumentaux19

Wojciech Dulinski [email protected] 2000, Genova, Italy

DEPFET : excellent noise figures (9 electrons rms.)at room temperature!

LEPSILEPSI Laboratoire d’Electronique et dePhysique desSystèmesInstrumentaux20

Wojciech Dulinski [email protected] 2000, Genova, Italy

Instead of conclusion and prospects...

Posted: 2 Jun 2000Quantum dots detect single photonsA single-photon detector based on quantum dots hasbeen developed for the first time by researchers atToshiba's European laboratories in the UK.Conventionally single photons are detected by multiplyinga photo-generated electron using an avalanche process.The Toshiba researchers, in collaboration with CambridgeUniversity, developed a device for detection of singlephotons based on a GaAs/AlGaAs modulation doped fieldeffect transistor (MODFET) which does not rely onavalanche processes.

SPIE Web

LEPSILEPSI Laboratoire d’Electronique et dePhysique desSystèmesInstrumentaux21

Wojciech Dulinski [email protected] 2000, Genova, Italy

Acknowledgements

I’m very grateful to Thierry Gys (CERN) and Gerhard Lutz (MPI), for their efficient help in the preparation of this talk!