lecture 27 high speed op amps - aicdesign.org · example 27-1 - increasing the gb of the op amp...
TRANSCRIPT
Lecture 27 – High Speed Op Amps (6/25/14) Page 27-1
CMOS Analog Circuit Design © P.E. Allen - 2016
LECTURE 27 – HIGH SPEED OP AMPS
LECTURE ORGANIZATION
Outline
• Extending the GB of conventional op amps
• Cascade Amplifiers
- Voltage amplifiers
- Voltage amplifiers using current feedback
• Summary
CMOS Analog Circuit Design, 3rd Edition Reference
Pages 370-386
Lecture 27 – High Speed Op Amps (6/25/14) Page 27-2
CMOS Analog Circuit Design © P.E. Allen - 2016
INCREASING THE GB OF OP AMPS
What is the Influence of GB on the Frequency Response?
The unity-gainbandwidth represents a limit in the trade-off between closed loop voltage
gain and the closed-loop -3dB frequency.
Example of a gain of -10 voltage amplifier:
What defines the GB?
We know that
GB = gm
C
where gm is the transconductance that converts the input voltage to current and C is the
capacitor that causes the dominant pole.
This relationship assumes that all higher-order poles are greater than GB.
Lecture 27 – High Speed Op Amps (6/25/14) Page 27-3
CMOS Analog Circuit Design © P.E. Allen - 2016
What is the Limit of GB?
The following illustrates what happens
when the next higher pole is not greater
than GB:
For a two-stage op amp, the poles and zeros are:
1.) Dominant pole p1 = -gm1
Av(0)Cc
2.) Output pole p2 = -gm6
CL
3.) Mirror pole p3 = -gm3
Cgs3+Cgs4
and z3 = 2p3
4.) Nulling pole p4 = -1
RzCI
5.) Nulling zero z1 = -1
RzCc-(Cc/gm6)
jGB
GB
High Order
Poles
Dominant
Pole
jw
a
150504-01
-wA
jGB’
Lecture 27 – High Speed Op Amps (6/25/14) Page 27-4
CMOS Analog Circuit Design © P.E. Allen - 2016
Higher-Order Poles
For reasonable phase margin, the smallest higher-order pole should be 2-3 times larger
than GB if all other higher-order poles are larger than 10GB.
If the higher-order poles are not greater than 10GB, then the distance from GB to the
smallest non-dominant pole should be increased for reasonable phase margin.
060709-01
-GB-10GB
Dominant
pole
Smallest non-
dominant pole
Larger non-
dominant poles
GB
10GB0dB
Av(0) dB
GBAv(0)
log10w
Lecture 27 – High Speed Op Amps (6/25/14) Page 27-5
CMOS Analog Circuit Design © P.E. Allen - 2016
Increasing the GB of a Two-Stage Op Amp
1.) Use the nulling zero to cancel the closest pole beyond the dominant pole.
2.) The maximum GB would be equal to the magnitude of the second closest pole
beyond the dominant pole.
3.) Adjust the dominant pole so that 2.2GB (second closest pole beyond the dominant
pole)
Illustration which assumes that p2 is the next closest pole beyond the dominant pole:
Lecture 27 – High Speed Op Amps (6/25/14) Page 27-6
CMOS Analog Circuit Design © P.E. Allen - 2016
Example 27-1 - Increasing the GB of the Op Amp Designed in Ex. 23-1
Use the two-stage op amp designed in Examples 23-1 and 23-2 and apply the above
approach to increase the gainbandwidth
as much as possible. Use the capacitor
values in the table shown along with Cox
= 6fF/µm2.
Solution
1.) First find the values of p2, p3, and p4.
a.) From Ex. 23-2, we see that
p2 = -95x106 rads/sec.
b.) p3 was found in Ex. 23-1 as
p3 = -1.25x109 rads/sec. (also
there is a zero at -2.5x109
rads/sec.)
Type P-Channel N-Channel Units
CGSO 220 10-12 220 10-12 F/m
CGDO 220 10-12 220 10-12 F/m
CGBO 700 10-12 700 10-12 F/m
CJ 560 10-6 770 10-6 F/m2
CJSW 350 10-12 380 10-12 F/m
MJ 0.5 0.5
MJSW 0.35 0.38
-
+
vin
M1 M2
M3 M4
M5
M6
M7
vout
VDD = 2.5V
CL =
10pF
1.5µm 0.5µm
1.5µm 0.5µm
15µm 0.5µm
M8 3µm
0.5µm
30µA
3µm 0.5µm
10µm 0.5µm
85µm
0.5µm
30µA
95µA
140709-01
15µm 0.5µm
Cc =3pF
Rz = 4.56kW
Lecture 27 – High Speed Op Amps (6/25/14) Page 27-7
CMOS Analog Circuit Design © P.E. Allen - 2016
Example 27-1 - Continued
(c.) To find p4, we must find CI which is the output capacitance of the first stage of the
op amp. CI consists of the following capacitors,
CI = Cbd2 + Cbd4 + Cgs6 + Cgd2 + Cgd4
For Cbd2 the width is 1.5µm L1+L2+L3=3µm AS/AD=4.5µm2 and PS/PD=9µm.
For Cbd4 the width is 15µm L1+L2+L3=3µm AS/AD=45µm2 and PS/PD=36µm.
From Table 3.2-1:
Cbd2 = (4.5µm2)(770x10-6F/m2) + (9µm)(380x10-12F/m) = 3.47fF+3.42fF ≈ 6.89fF
Cbd4 = (45µm2)(560x10-6F/m2) + (36µm)(350x10-12F/m) = 25.2fF+12.6F ≈ 37.8fF
Cgs6 in saturation is,
Cgs6=CGDO·W6+0.67(CoxW6L6)=(220x10-12)(85x10-6)+(0.67)(6x10-15)(42.5)
= 18.7fF + 255fF = 273.7fF
Cgd2 = 220x10-12x1.5µm = 0.33fF and Cgd4 = 220x10-12x15µm = 3.3fF
Therefore, CI = 6.9fF + 37.8fF + 273.7fF + 0.33fF + 3.3fF = 322fF. Although Cbd2 and
Cbd4 will be reduced with a reverse bias, let us use these values to provide a margin.
Thus let CI be 322fF.
In Ex. 23-2, Rz was 4.564k which gives p4 = - 0.680x109 rads/sec.
Lecture 27 – High Speed Op Amps (6/25/14) Page 27-8
CMOS Analog Circuit Design © P.E. Allen - 2016
Example 27-1 - Continued
Therefore, the roots are:
When p2 is cancelled, the next smaller pole is p4 which will define the new GB. 2.)
Using the nulling zero, z1, to cancel p2, gives p4 as the next smallest pole.
For 60° phase margin GB = |p4|/2.2 if the next smallest pole is more than 10GB.
GB = 0.680x109/2.2 = 0.309x109 rads/sec. or 49.2MHz.
This value of GB is designed from the relationship that GB = gm1/Cc. Assuming gm1 is
constant, then Cc = gm1/GB = (94.25x10-6)/(0.309x109) = 307fF. It might be useful to
increase gm1 in order to keep Cc above the surrounding parasitic capacitors (Cgd6 =
18.7fF). The success of this method assumes that there are no other roots with a
magnitude smaller than 10GB.
The result of this example is to increase the GB from 5MHz to 49MHz.
jw
s x 109
-1-2-3
z3 = -2.5G p3 = -1.25G p4 = -0.68G
p2 = -0.095G New GB
070503-01
Lecture 27 – High Speed Op Amps (6/25/14) Page 27-9
CMOS Analog Circuit Design © P.E. Allen - 2016
Example 27-2 - Increasing the GB of the Folded Cascode
Use the folded-cascode op amp designed in
Example 24-4 and apply the above approach to
increase the gainbandwidth as much as possible.
Assume that the drain/source areas are equal to
2µm times the width of the transistor and that all
voltage dependent capacitors are at zero voltage.
Solution
The poles of the folded cascode op amp are:
pA ≈ -1
RACA (the pole at the source of M6 )
pB ≈ -1
RBCB (the pole at the source of M7)
p6 ≈ -gm10
C6 (the pole at the drain of M6)
p8 ≈ -gm8rds8gm10
C8 (the pole at the source of M8)
p9 ≈ -gm9
C9 (the pole at the source of M9)
M6
M8
M10IT
VT
+
-150708-01
060628-04
VPB1
M4 M5
RA
I6
VPB2RB
I4 I5
VDD
I7
M6 M7VNB2
M8 M9
M10 M11
+
-vIN
vOUT
VNB1
I1 I2
M1 M2
M3I3
CL
IT
= gm8VTrds8gm10
R8
=VT
IT
=1
gm8rds8gm10
Lecture 27 – High Speed Op Amps (6/25/14) Page 27-10
CMOS Analog Circuit Design © P.E. Allen - 2016
Example 27-2 - Continued
Let us evaluate each of these poles.
1.) For pA, the resistance RA is approximately equal to gm6 and CA is given as
CA = Cgs6 + Cbd1 + Cgd1 + Cbd4 + Cbs6 + Cgd4
From Ex. 24-4, gm6 = 774.6µS and capacitors giving CA are found as,
Cgs6 = (220x10-12·80x10-6) + (0.67)(80µm·0.5µm·6fF/µm2) = 177.6fF
Cbd1 = (770x10-6)(16.5x10-6·2x10-6) + (380x10-12)(37x10-6) = 39.5fF
Cgd1 = (220x10-12·16.5x10-6) = 3.6fF
Cbd4 = Cbs6 = (560x10-6)(80x10-6·2x10-6) + (350x10-12)(2·82x10-6) = 147fF
and
Cgd4 = (220x10-12)(80x10-6) = 17.6fF
Therefore,
CA = 177.6fF + 39.5fF + 3.6fF + 147fF + 17.6fF + 147fF = 0.532pF
Thus,
pA = -774.6x10-6
0.532x10-12 = -1.456x109 rads/sec.
2.) For the pole, pB, the capacitance connected to this node is
CB = Cgd2 + Cbd2 + Cgs7 + Cgd5 + Cbd5 + Cbs7
Lecture 27 – High Speed Op Amps (6/25/14) Page 27-11
CMOS Analog Circuit Design © P.E. Allen - 2016
Example 27-2 - Continued
The various capacitors above are found as
Cgd2 = (220x10-12·16.5x10-6) = 3.6fF
Cbd2 = (770x10-6)(16.5x10-6·2x10-6) + (380x10-12)(37x10-6) = 39.5fF
Cgs7 = (220x10-12·80x10-6) + (0.67)(80µm·0.5µm·6fF/µm2) = 177.6fF
Cgd5 = (220x10-12)(80x10-6) = 17.6fF
and
Cbd5 = Cbs7 = (560x10-6)(80x10-6·2x10-6) + (350x10-12)(2·82x10-6) = 147fF
The value of CB is the same as CA and gm6 is assumed to be the same as gm7 giving pB =
pA = -1.456x109 rads/sec.
3.) For the pole, p6, the capacitance connected to this node is
C6= Cbd6 + Cgd6 + Cgs10 + Cgs11+ Cbd8 + Cgd8
The various capacitors above are found as
Cbd6 = (560x10-6)(80x10-6·2x10-6) + (350x10-12)(2·82x10-6) = 147fF
Cgs10 = Cgs11 = (220x10-12·10x10-6) + (0.67)(10µm·0.5µm·6fF/µm2) = 22.2fF
Cbd8 = (770x10-6)(10x10-6·2x10-6) + (380x10-12)(2·12x10-6) = 24.5fF
Cgd8 = (220x10-12)(10x10-6) = 2.2fF and Cgd6 = Cgd5 =17.6fF
Therefore, C6 = 147fF + 17.6fF + 22.2fF + 22.2fF + 2.2fF + 17.6fF = 0.229pF
Lecture 27 – High Speed Op Amps (6/25/14) Page 27-12
CMOS Analog Circuit Design © P.E. Allen - 2016
Example 27-2 - Continued
From Ex. 24-4, gm10 = 600x10-6. Therefore, p6, can be expressed as
-p6 = 600x10-6
0.229x10-12 = 2.62x109 rads/sec.
4.) Next, we consider the pole, p8. The capacitance connected to this node is
C8= Cbd10 + Cgd10 + Cgs8 + Cbs8
These capacitors are given as,
Cbs8 = Cbd10 = (770x10-6)(10x10-6·2x10-6) + (380x10-12)(2·12x10-6) = 24.5fF
Cgs8 = (220x10-12·10x10-6) + (0.67)(10µm·0.5µm·6fF//µm2) = 22.2fF
and
Cgd10 = (220x10-12)(10x10-6) = 2.2fF
The capacitance C8 is equal to
C8 = 24.5fF + 2.2fF + 22.2fF + 24.5fF = 73.4FF
Using the values of Ex. 24-4 of 600µS, the pole p8 is found as,
-p8 = gm8rds8 gm10/C8 = -600µS·600µS·/4.5µS·73.4fF = -1090x109 rads/sec.
5.) The capacitance for the pole at p9 is identical with C8. Therefore, since gm9 is
600µS, the pole p9 is -p9 = 8.17x109 rads/sec.
M6
M10
M8
1gm10
150504-02
Lecture 27 – High Speed Op Amps (6/25/14) Page 27-13
CMOS Analog Circuit Design © P.E. Allen - 2016
Example 27-2 - Continued
The poles are summarized below:
pA = -1.456x109 rads/sec pB = -1.456x109 rads/sec p6 = -2.62x109 rads/sec
p8 = -1090x109 rads/sec p9 = -8.17x109 rads/sec
The smallest of these poles is pA or pB. Since p6 is not much larger than pA or pB, we
will find the new GB by dividing pA or pB by 4 (which is a guess rather than 2.2) to get
364x106 rads/sec. Thus the new GB will be 364/2 or 58MHz.
Checking our guess gives a phase margin of,
PM = 90° - 2tan-1(0.364/1.456) - tan-1(0.364/2.62) = 54° which is okay
The magnitude of the dominant pole is given as
pdominant = GB/Avd(0) = 364x106/3,678 = 99,000 rads/sec.
The value of load capacitor that will give this pole is
CL = (pdominant·Rout)-1 = (99x103·7.44M)-1 = 1.36pF
Therefore, the new GB = 58MHz compared with the old GB = 10MHz.
jw
s x 109-1 -2 -3
p9 = -8.17G p6 = -2.62G
pA = pB
= -1.456G New GB
= 0.2x109
070503-02
-4 -5 -6 -7 -8
p8 = -1090G
Lecture 27 – High Speed Op Amps (6/25/14) Page 27-14
CMOS Analog Circuit Design © P.E. Allen - 2016
Elimination of Higher-Order Poles
Principle - minimize the number of nodes in the amplifier.
The minimum circuitry for a cascode op amp is shown below:
If the source-drain area between M1 and M2 and M3 and M4 can be minimized, the non-
dominant poles will be quite large.
060710-01
vin + VNB1
vin + VPB1
VNB2
VPB2
VDD
M1
M2
M3
M4
vout
CL
Dominant Pole
Non-
dominant
Pole
Non-
dominant
Pole
Lecture 27 – High Speed Op Amps (6/25/14) Page 27-15
CMOS Analog Circuit Design © P.E. Allen - 2016
Dynamically Biased, Push-Pull, Cascode Op Amp
Push-pull, cascode amplifier: M1-M2 and M3-M4
Bias circuitry: M5-M6-C2 and M7-M8-C1
Operation:
M6
M7
VDD
VSS
C1
M5
M8
C2
vin+IB
+
-VB2
+
-VB1
+
-VDD-VB2-vin+
+
-vin+-VSS-VB1
Equivalent circuit during the f1 clock period
120523-07
M1
M2
M3
M4
vout
VDD
VSS
C1
C2
vin-
+
-VDD-VB2-vin+
+
-vin+-VSS-VB1
VDD-VB2-(vin+-vin-)
VSS+VB1-(vin+-vin-)
Equivalent circuit during the f2 clock period.120523-08
Lecture 27 – High Speed Op Amps (6/25/14) Page 27-16
CMOS Analog Circuit Design © P.E. Allen - 2016
Dynamically Biased, Push-Pull, Cascode Op Amp - Continued
This circuit will operate on both clock phases† .
† S. Masuda, et. al., “CMOS Sampled Differential Push-Pull Cascode Op Amp,” Proc. of 1984 International Symposium on Circuits and Systems,
Montreal, Canada, May 1984, pp. 1211-12-14.
Performance (1.5µm CMOS):
• 1.6mW dissipation
• GB 130MHz (CL=2.2pF)
• Settling time of 10ns (CL=10pF)
This amplifier was used with a
28.6MHz clock to realize a 5th-order
switched capacitor filter having a
cutoff frequency of 3.5MHz.
Lecture 27 – High Speed Op Amps (6/25/14) Page 27-17
CMOS Analog Circuit Design © P.E. Allen - 2016
CASCADED AMPLIFIERS USING VOLTAGE AMPLIFIERS
Bandwidth of Cascaded Amplifiers
Cascading of low-gain, wide-bandwidth amplifiers:
Overall gain is Aon
-3dB frequency is,
-3dB = 1 21/n-1
If Ao = 10, 1 = 300x106 rads/sec. and n = 3, then
Overall gain is 60dB and -3dB = 0.511 = 480x106 rads/sec. 76.5 MHz
060710-02
Ao s/w1+1
Vin Vout
Ao s/w1+1
Ao s/w1+1
A1 A2 An
Ao s/w1+1
n
Lecture 27 – High Speed Op Amps (6/25/14) Page 27-18
CMOS Analog Circuit Design © P.E. Allen - 2016
Voltage Amplifier Suitable for Cascading
Voltage Gain:
Vout
Vin =
gm1
gm3 =
Kn'(W1/L1)(I3+I5)
Kp' (W3/L3)I3
-3dB ≈ gm3
Cgs1
060710-03
VDD
Vout +-
Vin
+
-
M1 M2M3 M4M5
VNB1
VPB1 VPB1
M6
M7
I7
I3 I4I5I6
I1 I2
Lecture 27 – High Speed Op Amps (6/25/14) Page 27-19
CMOS Analog Circuit Design © P.E. Allen - 2016
Ex. 27-3 - Design of a Voltage Amplifier for Cascading
Design the previous voltage amplifier for a gain of Ao = 10 and a power dissipation of no
more than 1mW. The design should permit Ao to be well defined. What is the -3dB for
this amplifier and what would be the -3dB for a cascade of three identical amplifiers?
Solution
To enhance the accuracy of the gain, we replace M3
and M4 with NMOS transistors to avoid the
variation of the transconductance parameter. This
assumes a p-well technology to avoid bulk effects.
The gain of 10 requires,
W1
L1(I3+I5) = 100
W3
L3 I3
If VDD = 2.5V, then 2(I3+I5)·2.5V = 1000µW.
Therefore, I3+I5 = 200µA. Let I3 = 20µA and W1/L1 = 10W3/L3.
Choose W1/L1 = 5µm/0.5µm which gives W3/L3 = 0.5µm/0.5µm. M5 and M6 are
designed to give I5 = 180µA and M7 is designed to give I7 = 400µA.
The dominant pole is gm3/Cout.
060711-01
VDD
Vout +-
Vin
+
-
M1 M2M3 M4M5
VNB1
VPB1 VPB1
M6
M7
I7
I3 I4I5I6
I1 I2
Lecture 27 – High Speed Op Amps (6/25/14) Page 27-20
CMOS Analog Circuit Design © P.E. Allen - 2016
Ex. 27-3 – Continued
Cout = Cgs3+Cbs3+Cbd1+Cbd5+Cgd1+Cgd5+Cgs1(next stage) ≈ Cgs3 + Cgs1
Using Cox = 60.6x10-4 F/m2, we get,
Cout ≈ (2.5+2.5)x10-12 m2x 60.6x10-4 F/m2 = 30.3fF Cout ≈ 30fF
gm3 = 2·120·1·20 µS = 69.3µS
Dominant pole ≈ 69.3µS/30fF = 23.1x108 rads/sec. f-3dB = 368MHz
The bandwidth of three identical cascaded amplifiers giving a low-frequency gain of
60dB would have a f-3dB of
f-3dB(Overall) = f-3dB 21/3-1 = 368 MHz (0.5098) = 187 MHz.
Pdiss = 3mW
060711-02
log10(f)
dB
60
40
20
0
-60dB/dec.
-40dB/dec.
-20dB/dec.
368MHz
187MHz
3 cascaded stages
2 cascaded stages
Single stage
Lecture 27 – High Speed Op Amps (6/25/14) Page 27-21
CMOS Analog Circuit Design © P.E. Allen - 2016
CASCADED AMPLIFIERS USING CURRENT FEEDBACK AMPLIFIERS
Advantages of Using Current Feedback
Why current feedback?
• Higher GB
• Less voltage swing more dynamic range
What is a current amplifier?
Requirements:
io = Ai(i1-i2)
Ri1 = Ri2 = 0
Ro =
Ideal source and load requirements:
Rsource =
RLoad = 0
Lecture 27 – High Speed Op Amps (6/25/14) Page 27-22
CMOS Analog Circuit Design © P.E. Allen - 2016
Bandwidth Advantage of a Current Feedback Amplifier
Consider the inverting voltage amplifier
shown using a current amplifier with negative
current feedback:
The output current, io, of the current
amplifier can be written as
io = Ai(s)(i1-i2) = -Ai(s)(iin + io)
The closed-loop current gain, io/iin, can be found as
ioiin
= -Ai(s)
1+Ai(s)
However, vout = ioR2 and vin = iinR1. Solving for the voltage gain, vout/vin gives
vout
vin =
ioR2
iinR1 =
-R2
R1
Ai(s)
1+Ai(s)
If Ai(s) = Ao
(s/A) + 1 , then
vout
vin =
-R2
R1
Ao
1+Ao
A(1+Ao)
s + A(1+Ao) Av(0) =
-R2Ao
R1(1+Ao) and -3dB = A(1+Ao)
Lecture 27 – High Speed Op Amps (6/25/14) Page 27-23
CMOS Analog Circuit Design © P.E. Allen - 2016
Bandwidth Advantage of a Current Feedback Amplifier - Continued
The unity-gainbandwidth is,
GB = |Av(0)| -3dB = R2Ao
R1(1+Ao) · A(1+Ao) =
R2
R1 Ao·A =
R2
R1 GBi
where GBi is the unity-gainbandwidth of the current amplifier.
Note that if GBi is constant, then increasing R2/R1 (the voltage gain) increases GB.
Illustration:
Note that GB2 > GB1 > GBi
The above illustration assumes that the GB of the voltage amplifier realizing the voltage
buffer is greater than the GB achieved from the above method.
Lecture 27 – High Speed Op Amps (6/25/14) Page 27-24
CMOS Analog Circuit Design © P.E. Allen - 2016
Current Feedback Amplifier
In a current mirror implementation of the current amplifier, it is difficult to make the
input resistance sufficiently small compared to R1.
This problem can be solved using a transconductance input stage shown in the following
block diagram:
Vout
Vin =
-GMRFAi
1 +Ai
060711-04
GMAi
RF
VinVout
+
-
Lecture 27 – High Speed Op Amps (6/25/14) Page 27-25
CMOS Analog Circuit Design © P.E. Allen - 2016
Differential Implementation of the Current Feedback Amplifier
Iin = gm1
1+ 0.5gm1Rin
Vin
+- Vin-
2 , Iin = (1+n)I, and Vout =
n (2RF)
1+n Iin
∴ Vout
Vin ≈
2nRF
(1+n)Rin
VDD
150504-03
Rin
RF RF + - Vout
VPB1
VPB2
VNB2
M1 M2
1:n 1:n
Vin+ Vin
-
Iin
I
nIin
I
nIin
nInI
Lecture 27 – High Speed Op Amps (6/25/14) Page 27-26
CMOS Analog Circuit Design © P.E. Allen - 2016
A 20dB Voltage Amplifier using a Current Amplifier
The following circuit is a programmable voltage amplifier with up to 20dB gain:
R1 and the current mirrors are used for gain variation while R2 is fixed.
M1
VDD
VSS
R1
+1 +1
VBias
+ -vout
vin+ vin-
M2
x2
= 1/4
x4
=1/8
x2
= 1/4
x4
=1/8x1
=1/2
x1
=1/2
R2 R2
Fig. 7.2-135A
Lecture 27 – High Speed Op Amps (6/25/14) Page 27-27
CMOS Analog Circuit Design © P.E. Allen - 2016
Frequency Response of a 60dB PGA
Includes output buffer:
Lecture 27 – High Speed Op Amps (6/25/14) Page 27-28
CMOS Analog Circuit Design © P.E. Allen - 2016
SUMMARY
• Increasing the GB of an op amp requires that the magnitude of all non-dominant poles
are much greater than GB from the origin of the complex frequency plane
• The practical limit of GB for an op amp is approximately 5-10 times less than the
magnitude of the smallest non-dominant pole (≈ 100MHz)
• To achieve high values of GB it is necessary to eliminate the non-dominant poles
(which come from parasitics) or increase the magnitude of the non-dominant poles
• The best way to achieve high-bandwidth amplifiers is to cascade high-bandwidth
voltage amplifiers
• If the gain of the high-bandwidth voltage amplifiers is well defined, then it is not
necessary to use negative feedback around the amplifier
• Amplifiers with well-defined gains are achievable with a -3dB bandwidth of 100MHz