le a q7wp - osram · le a q7wp 2 version 1.7 | 2018-11-28 maximum ratings parameter symbol values...
TRANSCRIPT
LE A Q7WP
1 Version 1.7 | 2018-11-28
Produktdatenblatt | Version 1.1 www.osram-os.com
Applications
LE A Q7WP
OSRAM OSTAR® Projection CompactCompact light source in SMT technology, glass win-dow on top, RoHS compliant
— Projection Home LED & Laser
— Projection Professional LED & Laser
— Stage Lighting (LED & Laser)
Features: — Package: compact lightsource in SMT technology with glass window on top
— Chip technology: Thinfilm
— Typ. Radiation: 120° (Lambertian emitter)
— Color: λdom = 617 nm (● amber)
— Corrosion Robustness Class: 3B
— ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)
Ordering Information
Type Luminous Flux 1) Ordering CodeIF = 1400 mAΦV
LE A Q7WP-NXPX-23 280 ... 520 lm Q65111A8289
LE A Q7WP
2 Version 1.7 | 2018-11-28
Maximum RatingsParameter Symbol Values
Operating Temperature Top min. max.
-40 °C105 °C
Storage Temperature Tstg min. max.
-40 °C105 °C
Junction Temperature Tj max. 125 °C
Forward Current TS = 25 °C; per chip
IF min. max.
40 mA5000 mA
Forward Current pulsed D = 0.5 ; f = 120 Hz; TS = 25 °C; per chip
IF pulse 6000 mA
ESD withstand voltage acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)
VESD 2 kV
Reverse current 2) IR max. 200 mA
LE A Q7WP
3 Version 1.7 | 2018-11-28
CharacteristicsIF = 1400 mA; TS = 25 °C; per chip
Parameter Symbol Values
Peak Wavelength λpeak typ. 624 nm
Dominant Wavelength 3) λdom min. typ. max.
612 nm617 nm624 nm
Spectral bandwidth at 50% Irel,max ∆λ typ. 18 nm
Viewing angle at 50% IV 2φ typ. 120 °
Radiating surface Acolor typ. 1.54 x 2.59 mm²
Partial Flux acc. CIE 127:2007 4) ΦE/V 120° = x * ΦE/V 180°
ΦE/V, 120° typ. 0.82
Forward Voltage 5) IF = 1400 mA; per Chip
VF min. typ. max.
2.00 V2.20 V2.90 V
Reverse voltage (ESD device) VR ESD min. 45 V
Reverse voltage 2) IR = 20 mA
VR max. 1.2 V
Real thermal resistance junction/solderpoint 6) RthJS real typ. max.
1.00 K / W1.30 K / W
Electrical thermal resistance junction/solderpoint 6) with efficiency ηe = 25 %
RthJS elec. typ. max.
0.75 K / W0.98 K / W
LE A Q7WP
4 Version 1.7 | 2018-11-28
Brightness Groups
Group Luminous Flux 1) Luminous Flux 1)
IF = 1400 mA IF = 1400 mAmin. max.ΦV ΦV
NX 280 lm 330 lm
NY 330 lm 390 lm
NZ 390 lm 450 lm
PX 450 lm 520 lm
Wavelength Groups
Group Dominant Wavelength 3) Dominant Wavelength 3)
min. max.λdom λdom
2 612 nm 618 nm
3 618 nm 624 nm
Group Name on Label Example: NX-2Brightness Wavelength
NX 2
LE A Q7WP
5 Version 1.7 | 2018-11-28
Relative Spectral Emission 4)
Φrel = f (λ); IF = 1400 mA; per Chip; TJ = 25 °C
LE A Q7WP
350 400 450 500 550 600 650 700 750 800λ / nm
0.0
0.2
0.4
0.6
0.8
1.0Φrel
: Vλ
: amber
Radiation Characteristics 4)
Irel = f (ϕ); TJ = 25 °CLE A Q7WP
-100°
-90°
-80°
-70°
-60°
-50°
-40°
-30°-20°
-10° 0° 10° 20° 30° 40° 50° 60° 70° 80° 90°ϕ / °
0.0
0.2
0.4
0.6
0.8
1.0Irel
LE A Q7WP
6 Version 1.7 | 2018-11-28
Relative Partial Flux 4)
ΦV(2φ)/ΦV(180°) = f(φ); TJ = 25 °C
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 1802*ϕ [°]
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0ΦV( ϕ)ΦV(180°)
2
LE A Q7WP
7 Version 1.7 | 2018-11-28
Forward current 4), 7)
IF = f(VF); TJ = 25 °C; per Chip
LE A Q7WP
1.7 3.12.0 2.2 2.4 2.6 2.8VF / V
40
1000
2000
3000
4000
5000
6000IF / mA
Relative Luminous Flux 4), 7)
Φv/Φv(1400 mA) = f(IF); TJ = 25 °C; per Chip
LE A Q7WP
4010
0020
0030
0040
0050
0060
00
IF / mA
0
1
2
3
4ΦV
ΦV(1400mA)
LE A Q7WP
8 Version 1.7 | 2018-11-28
Forward Voltage 4)
ΔVF = VF - VF(25 °C) = f(Tj); IF = 1400 mA; per Chip
LE A Q7WP
-40 -20 0 20 40 60 80 100 120Tj / °C
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3∆VF / V
Relative Luminous Flux 4)
Φv/Φv(25 °C) = f(Tj); IF = 1400 mA; per Chip
LE A Q7WP
-40 -20 0 20 40 60 80 100 120Tj / °C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4Φv
Φv(25°C)
Dominant Wavelength 4)
Δλdom = λdom - λdom(25 °C) = f(Tj); IF = 1400 mA; per Chip
LE A Q7WP
-40 -20 0 20 40 60 80 100 120Tj / °C
-10
-5
0
5
10∆λ dom / nm
LE A Q7WP
9 Version 1.7 | 2018-11-28
Max. Permissible Forward CurrentIF = f(T)
0 20 40 60 80 100
T / °C
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500IF / mA
LE A Q7WP
: Ts
Permissible Pulse Handling CapabilityIF = f(tp); D: Duty cycle
10-6 10-5 10-4 10-3 0.01 0.1 1 10
Pulse time [s]
5
6
7
IF [A]
TS = 0°C ... 77°CLE A Q7WP
: D = 1.0: D = 0.5: D = 0.2: D = 0.1: D = 0.05: D = 0.02: D = 0.01: D = 0.005
Permissible Pulse Handling CapabilityIF = f(tp); D: Duty cycle
10-6 10-5 10-4 10-3 0.01 0.1 1 10
Pulse time [s]
2
3
4
5
6
7
IF [A]
TS = 105°CLE A Q7WP
: D = 1.0: D = 0.5: D = 0.2: D = 0.1: D = 0.05: D = 0.02: D = 0.01: D = 0.005
LE A Q7WP
10 Version 1.7 | 2018-11-28
Permissible Frequency Handling CapabilityIF=f(D) f: Frequency
0 10 20 30 40 50 60 70 80 90 100
Duty Cycle [%]
0
2
4
6
IF [A]
LE A Q7WP
TS = 0°C ... 77°C
: f = 60Hz: f = 120Hz: f = 240Hz: f = 400Hz: f = 800Hz: f = 1000Hz
Permissible Frequency Handling CapabilityIF=f(D) f: Frequency
"" "
0 10 20 30 40 50 60 70 80 90 100
Duty Cycle [%]
0
2
4
6
IF [A]
LE A Q7WP
TS = 105°C
: f = 60Hz: f = 240Hz: f = 400Hz: f = 800Hz: f = 1000Hz
LE A Q7WP
11 Version 1.7 | 2018-11-28
Dimensional Drawing 8)
Approximate Weight: 96.0 mg
Package marking: Cathode
Corrosion test: Class: 3B Test condition: 40°C / 90 % RH / 15 ppm H2S / 14 days (stricter then IEC 60068-2-43)
ESD advice: The device is protected by ESD device which is connected in parallel to the Chip.
LE A Q7WP
12 Version 1.7 | 2018-11-28
Recommended Solder Pad 8)
Do not use exposed copper MCPCB technology for automotive applications. For superior solder joint connectivity results we recommend soldering under standard nitrogen atmosphere. Package not suitable for any kind of wet cleaning or ultrasonic cleaning.
LE A Q7WP
13 Version 1.7 | 2018-11-28
Reflow Soldering ProfileProduct complies to MSL Level 2 acc. to JEDEC J-STD-020E
00
s
OHA04525
50
100
150
200
250
300
50 100 150 200 250 300t
T
˚C
St
t
Pt
Tp240 ˚C
217 ˚C
245 ˚C
25 ˚C
L
Profile Feature Symbol Pb-Free (SnAgCu) Assembly UnitMinimum Recommendation Maximum
Ramp-up rate to preheat*)
25 °C to 150 °C2 3 K/s
Time tSTSmin to TSmax
tS 60 100 120 s
Ramp-up rate to peak*)
TSmax to TP
2 3 K/s
Liquidus temperature TL 217 °C
Time above liquidus temperature tL 80 100 s
Peak temperature TP 245 260 °C
Time within 5 °C of the specified peaktemperature TP - 5 K
tP 10 20 30 s
Ramp-down rate*TP to 100 °C
3 6 K/s
Time25 °C to TP
480 s
All temperatures refer to the center of the package, measured on the top of the component* slope calculation DT/Dt: Dt max. 5 s; fulfillment for the whole T-range
LE A Q7WP
14 Version 1.7 | 2018-11-28
Taping 8)
LE A Q7WP
15 Version 1.7 | 2018-11-28
Tape and Reel 9)
Reel dimensions [mm]A W Nmin W1 W2 max Pieces per PU
180 mm 12 + 0.3 / - 0.1 60 12.4 + 2 18.4 1000
LE A Q7WP
16 Version 1.7 | 2018-11-28
Barcode-Product-Label (BPL)
Dry Packing Process and Materials 8)
OHA00539
OSRAM
Moisture-sensitive label or print
Barcode label
Desiccant
Humidity indicator
Barcode label
OSRAM
Please check the HIC immidiately afterbag opening.
Discard if circles overrun.Avoid metal contact.
WET
Do not eat.
Comparatorcheck dot
parts still adequately dry.
examine units, if necessary
examine units, if necessary
5%
15%
10%bake units
bake units
If wet,
change desiccant
If wet,
Humidity IndicatorMIL-I-8835
If wet,
Mois
ture
Level 3
Flo
or tim
e 168 H
ours
Mois
ture
Level 6
Flo
or tim
e 6
Hours
a) H
umid
ity In
dicato
r C
ard is
> 1
0% w
hen read a
t 23 ˚
C ±
5 ˚C
, or
reflo
w, v
apor-phase r
eflow
, or equiv
alent p
rocessin
g (peak p
ackage
2. Afte
r th
is b
ag is o
pened, devic
es that w
ill b
e subje
cted to
infrare
d
1. Shelf
life in
seale
d bag: 2
4 month
s at <
40 ˚
C a
nd < 9
0% rela
tive h
umid
ity (R
H).
Mois
ture
Level 5
a
at facto
ry c
onditions o
f
(if b
lank, s
eal date
is id
entical w
ith d
ate c
ode).
a) M
ounted w
ithin
b) S
tore
d at
body tem
p.
3. Devic
es require
bakin
g, befo
re m
ounting, i
f:
Bag s
eal date
Mois
ture
Level 1
Mois
ture
Level 2
Mois
ture
Level 2
a4. If b
aking is
require
d,
b) 2a o
r 2b is
not m
et.
Date
and ti
me o
pened:
refe
rence IP
C/J
ED
EC
J-S
TD
-033 fo
r bake p
rocedure
.
Flo
or tim
e see b
elow
If bla
nk, see b
ar code la
bel
Flo
or tim
e > 1
Year
Flo
or tim
e 1
Year
Flo
or tim
e 4
Weeks10%
RH
.
_<
Mois
ture
Level 4
Mois
ture
Level 5
˚C).
OPTO
SEM
ICO
NDUCTORS
MO
ISTURE S
ENSITIV
E
This b
ag conta
ins
CAUTION
Flo
or tim
e 72 H
ours
Flo
or tim
e 48 H
ours
Flo
or tim
e 24 H
ours
30 ˚C
/60%
RH
.
_<
LE
VE
L
If bla
nk, see
bar code la
bel
Moisture-sensitive product is packed in a dry bag containing desiccant and a humidity card according JEDEC-STD-033.
LE A Q7WP
17 Version 1.7 | 2018-11-28
Schematic transportation box 8)
OHA02044
PACKVAR:
R077Additional TEXT
P-1+Q-1
Multi TOPLED
Muste
r
OSRAM Opto
Semiconductors
(6P) BATCH NO:
(X) PROD NO:
10
(9D) D/C:
11(1T) LOT NO:
210021998
123GH1234
024 5
(Q)QTY: 2000
0144
(G) GROUP:
260 C RT240 C R
3
220 C R
MLBin3:Bin2: Q
-1-20
Bin1: P-1-20
LSY T6762
2a
Temp ST
R18DEMY
PACKVAR:
R077Additional TEXT
P-1+Q-1
Multi TOPLED
Muste
r
OSRAM Opto
Semiconductors
(6P) BATCH NO:
(X) PROD NO:
10
(9D) D/C:
11(1T) LOT NO:
210021998
123GH1234
024 5
(Q)QTY: 2000
0144
(G) GROUP:
260 C RT240 C R
3
220 C R
MLBin3:Bin2: Q
-1-20
Bin1: P-1-20
LSY T6762
2a
Temp ST
R18DEMY
OSRAM
Packing
Sealing label
Barcode label
Mois
ture
Level 3
Flo
or tim
e 168 H
ours
Mois
ture
Level 6
Flo
or tim
e 6
Hours
a) H
umid
ity In
dicato
r C
ard is
> 1
0% w
hen read a
t 23 ˚
C ±
5 ˚C
, or
reflo
w, v
apor-phase r
eflow
, or e
quivale
nt pro
cessing (p
eak package
2. Afte
r th
is b
ag is o
pened,
devices th
at will
be s
ubjecte
d to in
frare
d
1. Shelf
life in
seale
d bag: 2
4 month
s at <
40 ˚
C a
nd < 9
0% rela
tive h
umid
ity (R
H).
Mois
ture
Level 5
a
at facto
ry c
onditions o
f
(if b
lank, s
eal date
is id
entical w
ith d
ate c
ode).
a) M
ounted w
ithin
b) S
tore
d at
body te
mp.
3. Devic
es require
bakin
g, befo
re m
ounting, i
f:
Bag s
eal date
Mois
ture
Level 1
Mois
ture
Level 2
Mois
ture
Level 2
a4. If b
aking is
require
d,
b) 2a o
r 2b is
not m
et.
Date
and ti
me o
pened:
refe
rence IP
C/J
ED
EC
J-S
TD-0
33 for bake p
rocedure
.
Floor
time s
ee belo
w
If bla
nk, see b
ar code la
bel
Flo
or tim
e > 1
Year
Floor
time
1 Y
ear
Flo
or tim
e 4
Weeks10%
RH
.
_<
Mois
ture
Level 4
Mois
ture
Level 5
˚C).
OPTO
SEM
ICONDUCTO
RS
MO
ISTURE S
ENSITIV
E
This b
ag conta
ins
CAUTION
Flo
or tim
e 72 H
ours
Flo
or tim
e 48 H
ours
Flo
or tim
e 24 H
ours
30 ˚C
/60%
RH
.
_<
LE
VE
L
If bla
nk, see
bar code la
bel
Barcode label
Dimensions of transportation box in mmWidth Length Height
195 ± 5 mm 195 ± 5 mm 30 ± 5 mm
LE A Q7WP
18 Version 1.7 | 2018-11-28
Chip Technology: M: low (750µm) P: high (2mm²)
Encapsulant Type / Lens Properties W: Window on top
Wavelength Emission Color Color coordinates according (λdom typ.) CIE 1931/Emission color: R: 625 nm red UW: ultra white A: 617 nm amber T: 528 nm true green B: 470 nm blue RTB: amber/true green/blue BR: blue/red CG: color on demand green
LE: Light emitting diode
Package Type Q: OSTAR Compact
Lead / Package Properties 7: 2 Chip Version 8: 1 Chip Version
Type Designation System
LE CG Q 7 W P
LE A Q7WP
19 Version 1.7 | 2018-11-28
NotesThe evaluation of eye safety occurs according to the standard IEC 62471:2006 (photo biological safety of lamps and lamp systems). Within the risk grouping system of this IEC standard, the device specified in this data sheet falls into the class exempt group (exposure time 10000 s). Under real circumstances (for expo-sure time, conditions of the eye pupils, observation distance), it is assumed that no endangerment to the eye exists from these devices. As a matter of principle, however, it should be mentioned that intense light sources have a high secondary exposure potential due to their blinding effect. When looking at bright light sources (e.g. headlights), temporary reduction in visual acuity and afterimages can occur, leading to irrita-tion, annoyance, visual impairment, and even accidents, depending on the situation.
Subcomponents of this device contain, in addition to other substances, metal filled materials including silver. Metal filled materials can be affected by environments that contain traces of aggressive substances. There-fore, we recommend that customers minimize device exposure to aggressive substances during storage, production, and use. Devices that showed visible discoloration when tested using the described tests above did show no performance deviations within failure limits during the stated test duration. Respective failure limits are described in the IEC60810.
For further application related informations please visit www.osram-os.com/appnotes
LE A Q7WP
20 Version 1.7 | 2018-11-28
Disclaimer
Attention please!The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances.For information on the types in question please contact our Sales Organization.If printed or downloaded, please find the latest version on the OSRAM OS webside.
PackingPlease use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred.
Product safety devices/applications or medical devices/applicationsOSRAM OS components are not developed, constructed or tested for the application as safety relevant component or for the application in medical devices.
In case Buyer – or Customer supplied by Buyer– considers using OSRAM OS components in product safety devices/applications or medical devices/applications, Buyer and/or Customer has to inform the local sales partner of OSRAM OS immediately and OSRAM OS and Buyer and /or Customer will analyze and coordi-nate the customer-specific request between OSRAM OS and Buyer and/or Customer.
LE A Q7WP
21 Version 1.7 | 2018-11-28
Glossary1) Brightness: Brightness values are measured during a current pulse of typically 25 ms, with an internal
reproducibility of ±8 % and an expanded uncertainty of ±11 % (acc. to GUM with a coverage factor of k = 3).
2) Reverse Operation: Reverse Operation of 10 hours is permissible in total. Continuous reverse opera-tion is not allowed.
3) Wavelength: The wavelength is measured at a current pulse of typically 25 ms, with an internal repro-ducibility of ±0.5 nm and an expanded uncertainty of ±1 nm (acc. to GUM with a coverage factor of k = 3).
4) Typical Values: Due to the special conditions of the manufacturing processes of semiconductor devic-es, the typical data or calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily correspond to the actual parameters of each single product, which could dif-fer from the typical data and calculated correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data will be changed without any further notice.
5) Forward Voltage: The forward voltage is measured during a current pulse of typically 8 ms, with an internal reproducibility of ±0.05 V and an expanded uncertainty of ±0.1 V (acc. to GUM with a coverage factor of k = 3).
6) Thermal Resistance: Rth max is based on statistic values (6σ).7) Characteristic curve: In the range where the line of the graph is broken, you must expect higher differ-
ences between single devices within one packing unit.8) Tolerance of Measure: Unless otherwise noted in drawing, tolerances are specified with ±0.1 and
dimensions are specified in mm.9) Tape and Reel: All dimensions and tolerances are specified acc. IEC 60286-3 and specified in mm.
LE A Q7WP
22 Version 1.7 | 2018-11-28
Revision HistoryVersion Date Change
1.7 2018-11-28 Characteristics Electro - Optical Characteristics
LE A Q7WP
23 Version 1.7 | 2018-11-28
Published by OSRAM Opto Semiconductors GmbH Leibnizstraße 4, D-93055 Regensburg www.osram-os.com © All Rights Reserved.