lbnl 9/15/06 limiting factors in solar cell efficiency - how do they apply on the nano-scale ? d.g....

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LBNL 9/15/06 Limiting factors in solar cell efficiency - how do they apply on the nano-scale ? D.G. Ast Cornell University

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LBNL 9/15/06

Limiting factors in solar cell efficiency - how do they apply

on the nano-scale ?

D.G. Ast

Cornell University

LBNL 9/15/06

Giant Single Molecule Cell (bulk collection)

record =24. 7 %

1-D “nano” cell

(depleted collection)

record = 13%

(triple - UniSolar)

3-D “nano” cell (dye or QM sensitized)

record= 12.6%

(Graetzel, wet)

From Macro to Nano

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THE DEVICE VIEW

Jsc Voc FF

Jsc

Voc

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Short Circuit Current

Jsc

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BAND GAP

Black body: Thermal emission from cell via above bandgap photons.

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Jsc

AM 1.5 Theoretical Upper Limit versus bandgap .

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Jsc

1. Incident energy flux reduction

Reflection (Si ~ 10%)

Contact shading

Insufficient absorption ( d < )

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Jsc 2. Failure to generate electron hole pairs

Sub bandgap photons (excluding two photon processes*)

Bulk free carrier absorption, “Auger”

Free carrier absorption due to V across

cell

Frank Keldysh effect

* investigated in Si for two photon processes

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3. Failure of e-h to contribute to current

Bulk recombination (impurities, structural defects, )

Surface recombination

Non-contacted surface

Contacted surface

Jsc

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Jsc 4. Remedies

Bulk Losses:

Clean Starting Materials

Gettering

Thin bulk ! => Light trapping design !

Collecting from fully depleted

layers with uniform (!) electric

fields. (No “hang through” !)

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Surface Recombination

a. Non contacted area

Small Area ! (Implication for “nano” !)

Factors influencing S:

Capture cross section of surface states (in Si >>for

electrons than holes)

Hole and electron concentration at surface (Voutput

dependent as cminority increases with Vout)

Charge of passivating layer

Jsc

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Jsc

Contact Areas:

Small area ! (Nano, again )

Heavy doping => “ Back surface field”

(Graetzel Patents on TiO2)

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Open circuit voltage

Voc

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Voc

1ln

o

loc I

I

q

kTV

Dh

ih

Ae

ie

NL

nqD

NL

nqDAI

22

0

Small ni , Long lifetimes (Diffusion distance)

1. “ Junction Leakage “

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Green , semi-empirical

Kiss & Rehwald (thermodynamic)

Voc

Good a:Si-H (Roca, Meillaud et al.)

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Additional contribution(s) to Jo

1. Generation current due to bulk “midgap” states

2. Generation current to due surface states.

Voc

n, diode ideality factor, function of operating conditions.

Sum over exponentials commonly expressed as

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Efficiency tends to improve with illumination level.

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2. Junction Defects (shorts, partial shorts, more general: Spatial inhomogeneity)

1. Scale with junction area (nano !)

2. Difficult to diagnose

3. The bane of the multicrystalline cell

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FFEmpirical relation (Green)

1

72.0ln

oc

ococ

V

VVFF

Additional Effects

Series Resistance : Contacts & Leads

Parallel Resistance : Shunts !

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Green:

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Module EfficiencyCdTe modules are much less efficient than CdTe cells !

Cells must be uniform !

Cost

Not just materials but processing (CIS)

Stabilitya-Si:H, DSC ..

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PERL cell

= 24 %

PERL => Passivated Emitter, Rear contact Locally diffused

GIANT SINGLE MOLECULE DEVICE

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200 nm 100 nm

M. Schmidt, A. Schoepke, O. Milch, Th. Lussky, W. Fuhs

A-Si:H

1-D “NANO”

N(E) as d

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A(luminum) Induced C(rystallization) I(on) A(ssisted)

D(eposition) poly-Si cell (M.Green) 9…12%

(Pinnacle of optical engineering)

Si reappears via M. Green

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QM dots

3-D NANO

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NANO CELLS:

Insufficient absorption => Multiple stacking

large surface area => junction leakage

increased lead length =>resistance, recombination

Contact shading => transparent electrodes e.g.TiO2 surface recombination, parasitic resistance,

E drops !

n mismatch => multiple bounce

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Need to match 2 semiconductors + 1 Redox couple

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QD dots sensitized

Higher absorption than dyes.

More corrosion resistant.

Layer 3 is the insulator (TiO2) between organic p conductor and layer 2, the F doped SnO contact layer. Potential large area problem.

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Jsc

Absorption tuning by PbS QD growth

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Jsc

Jsc at QD size below optimal optimum.

Monochromatic Light

max ~ 10%

Trade off between coverage (1x), QM size tuning, and transport loss.

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Summary

Challenges:

Transition from single giant molecule cell to nano cell

1. Large increase in junction area .. junction defects.

2. Surface states

2. Transparent conductors…. bandgap matching.

3. Large contact area … shunts

Rewards :

1. Bandgap tuning

2. Easier implementation of “sub bandgap” and “hot carrier” . . . ; .. Conversion.

3. Large area for “in situ” chemical conversion !

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Appendix

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...

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