E.Popova 04.07.2011 NDIP 1

Large area UV SiPMs with extremely low cross-talk

Masahiro Teshima1, Razmik Mirzoyan1, Boris Dolgoshein2, Pavel Buzhan2, Elena Popova2, Alexey Stifutkin2, Andrey Ilyin2, Vladimir Kaplin2, Andrey

Zhukov3

1Max-Planck-Institute for Physics, Munich, Germany2Moscow Engineering and Physics Institute, Moscow, Russia

3National Research University Moscow Institute of Electronic Technology

E.Popova 04.07.2011 NDIP 2

Memory of Boris Dolgoshein (1930-2010)

Development of UV sensitive SiPM with extremely low crosstalk for application in MAGIC and EUSO experiments was the last Boris task

Professor MEPHIHead of the particle-physics department of MEPHIInventor of streamer chamber (1962)Developer and pioneer of Transition Radiation Detector (TRD)Since 1993 Boris had developed a new photon detector which he called Silicon PhotoMultiplier (SiPM) in collaboration with DESY and then with Max Planck Institute fur PhysicsFirst in the world large scale SiPM application in Hadron Calorimeter prototype had made by Boris and his team

E.Popova 04.07.2011 NDIP 3

SiPM Sizes 1x1 and 3x3 mm²

µ-cell pitch 50 and 100 µm

Geom. Eff. 40-80%

MEPhI - MPI for Physics R&D collaboration and cooperation with PerkinElmer Industries (now EXCELITAS)

18 different modifications

Test batch have been produced in December 2010

E.Popova 04.07.2011 NDIP 4

SiPM vs MPPC. Maximum PDE. LED 435nm100x100 micron2 (Geometrical Efficiency ~80%), 1x1mm2 T=+25C

0 200 400 600 800 10000

400

800

Channels

0 200 400 600 800 10000

400

800

1200

Eve

nts

Eve

nts

SiPM 100B

MPPC

S10362-11-100U No.50

Equal light

0 1 2 3 4 50,0

0,1

0,2

0,3

0,4

Cro

ssta

lk

Overvoltage ∆ U, V

0 1 2 3 4 50,0

0,5

1,0

1,5

2,0

Num

ber o

f pix

els

Overvoltage ∆ U, V

Hamamatsu S10362-11-100U No.50 (Ubd=68,75) SiPM 100B 1x1 (Ubd=33,51)

On the base of “0” probability

calculated from light spectra

E.Popova 04.07.2011 NDIP 5

Crosstalk and Excess noise factor

0 1 2 3 4 5 60,0

0,1

0,2

0,3

0,4

0,5

MPPC S10362-33-100C No354 3x3mm2 MPPC S10362-11-100U No.50 1x1mm2 SiPM 100B 3x3mm2 SiPM 100B 1x1mm2

Cros

stal

k xt

Overvoltage ∆ U, V0 1 2 3 4 5 6

1,0

1,1

1,2

1,3

1,4

1,5

1,6

MPPC S10362-33-100C No354 3x3mm2 MPPC S10362-11-100U No.50 1x1mm2 SiPM 100B 3x3mm2 SiPM 100B 1x1mm2

ENF

Overvoltage ∆ U, V

epixelsfired A

MeanN1

_><=

0

2exp)(

NENF

Mean=

><σ

N0 initial fired pixels calculated from “0” probabilityXt crosstalkA1e amplitude of single pixel

For light distributed according to Poisson law

xtNN pixelsfired −

=1

0_

E.Popova 04.07.2011 NDIP 6

Timing for 3x3mm2 SiPMs and MPPC 40ps laser 405nm single photon mode. Temperature -20C

33 34 35 36 37 38 39 400

100

200

300

400

500

60067,5 68,0 68,5 69,0 69,5

0

100

200

300

400

500

600

SiPM 50micron 50B SiPM 100micron 100B

FWH

M, p

s

SiPM Bias Voltage, V

MPPC 50micron (S10362-33-050C No254) MPPC 100micron (S10362-33-100C No354)

Preliminary

E.Popova 04.07.2011 NDIP 7

Timing with 3x3mm2 100B SiPM

540 560 580 600 620 640 6600

100

200

300

400

500

600

700

Cou

nt

20 ps/ch

U=38 VFWHM = 205 ps

33 34 35 36 37 380

50

100

150

200

250

300

350

400

FWH

M, p

s

U, V

40ps laser 405nm single photon modeT=-40C

Best value for 3x3mm2 100B SiPM is 205 ps

E.Popova 04.07.2011 NDIP 8

Efficiency measurements with calibrated PIN-diode(Hamamatsu S1337-1010BQ)

200 300 400 500 600 700 800 900 10000

20

40

60

80

100

Inte

rnal

QE

Wavelength λ , nm

ARQEInternalQE =

200 300 400 500 600 700 800 900 10000

20

40

60

80

100

Effic

ienc

y, %

W avelength λ , nm

Calculated AR transparency

Measured QE for test structure

Geiger(U)AInternalQEARPDE ⋅⋅⋅=

Measured PDE for 100B SiPM(overvoltage 15% )

200 300 400 500 600 7000

20

40

60

80

100

A*G

eige

r(U

)

Wavelength λ , nm

A=80%

QEPDEUGeigerA =⋅ )(

Geiger=1

E.Popova 04.07.2011 NDIP 9

PDE checking (pulsed mode LEDs) 100B 1x1mm2 SiPM

350 400 450 500 550 600 650 700 750 8000

10

20

30

40

50

60

70

PDE,

%

W avelength λ , nm

MEPHI XP2020 (error=17%) for U=38V (∆ U=4,7V) Musienko (same type SiPM sample with U=37.5V)

300 350 400 450 500 550 600 6500

10

20

30

40

50

60

70PDE for U=38V (∆ U=4,7V)

PDE,

%

W avelength λ , nm

Comparison with reference XP2020 (error=17%) at MEPHI PIN 10x10 at MEPhI (error=7%) at MEPHI PIN 18x18 at MPI (error=15%) at MPI

Measurements at MEPHI and

CERN (thanks to Y.Musienko)Measurements at MEPHI and MPI

•PDE measured with reference calibrated PIN-diodes is slightly lower then for reference calibrated PMT

•All results are equal within experimental errors

E.Popova 04.07.2011 NDIP 10

Spectral PDE comparison

300 400 500 600 700 8000

20

40

60

80

100

PMT XP2020Q (according to Philips Photonics)

APD EG&G C30626E (NIM A428 (1999) 413-431)

P

DE

, %

wavelength, nm

SiPM 1x1mm2 100B

E.Popova 04.07.2011 NDIP 11

Voltage stability SiPM 100B

0 1 2 3 4 5 60

4

8

12

16

20

24

28

32

Gai

n *1

05

Overvoltage (U), V

0

2

4

6

8

10

12

14

16

Rel

ativ

e ga

in v

aria

tion,

%/1

00m

V

mVV

GdUdG

100%6.2)4( =

0 1 2 3 4 5 60

10

20

30

40

50

60

PD

E(4

35nm

), %

Overvoltage, V

0

2

4

6

Rel

ativ

e pd

e va

riatio

n, %

/100

mV

0 1 2 3 4 5 60,00

0,02

0,04

0,06

0,08

0,10

0,12

cros

stal

k

Overvoltage, V

0

2

4

6

8

10

12

Rel

ativ

e pd

e va

riatio

n, %

/100

mV

mVV

dUd

100%46.0)4( =

εε

mVV

dUd

100%6)4( =

γγ

E.Popova 04.07.2011 NDIP 12

Temperature stability SiPM 100B

0 5 10 15 20 25 30

32,8

33,0

33,2

33,4

33,6

Ubr

eakd

own

(V)

Temperature, C-5 0 5 10 15 20 25 30 35

19

20

21

22

23

24

for U = 37,3 at T = +20 0C ( ∆ U = 4V)

Pix

el g

ain

. 1

05

Temperature T, 0C

var = 0,5 % / 0C

-5 0 5 10 15 20 25 30 350,02

0,03

0,04

0,05var = 2,1 % / 0C

Cro

ssta

lk

Temperature T, 0C

26.4±0.4mV/ºC

-5 0 5 10 15 20 25 30 35

1,55

1,60

1,65

var = 0,2 % / 0C

Num

ber o

f pix

els

fired

(595

nm)

Temperature T, 0C

E.Popova 04.07.2011 NDIP 13

PET Spectrometry with LYSO and Na22

0 200 400 600 800 10000

20

40

60

80

100

120

Even

ts

Channels

MPPC 3x3mm2 50 micron

0 200 400 600 800 10000

50

100

150

200

Even

ts

Channels

SiPM 50B 3x3mm2 50micron

Self triggering modeAmplitude spectra Integration time 1µsLYSO 3x3x5mm3

Without collimator

Preliminary. Setup is not optimized

Energy Resolution (FWHM) ∼14%

0 200 400 600 8000

50

100

150

200

250

300

Eve

nts

Channels

PMT XP2020

E.Popova 04.07.2011 NDIP 14

Timing for PET with LYSO and Na22

Preliminary. Setup is not optimized

FWHM (PMT resolution is not substructed)

SiPM 100B 340ps

SiPM 50B 375ps

MPPC-50 520ps

SiPMs and MPPC are 3x3mm2

SiPM(MPPC)

LYSO

PMT XP2020

Na22

Plastic ∅2cmx1cm

CFD (10%)

TAC

start stop

Energy signal

PC

LYSO 3x3x5mm3 Without collimator

E.Popova 04.07.2011 NDIP 15

Summary

• MEPHI&MPI in cooperation with Excelitas Technologies have been produced SiPMs 1x1 and 3x3 mm2 with extremely high PDE (above 50%) in UV-blue region

• ENF is very close to 1 due to complex crosstalk suppression

• Time jitter (FWHM) for 3x3mm2 SiPM with 100 micron pitch is about 200-300ps and improvements are possible

• Such SiPMs are very promising for Astroparticle and PET applications

• During one year UV SiPMs will be commercial product of Excelitas Technologies

E.Popova 04.07.2011 NDIP 16

SiPM Noise

34 35 36 37 38 39

0,1

1

Dar

k ra

te, M

Hz

Bias voltage U, V

1x1mm type 100B T = +30 0C (U

bd=33,56)

T = +25 0C (Ubd

=33,44)

T = +20 0C (Ubd

=33,32)

T = +15 0C (Ubd

=33,)

T = +10 0C (Ubd

=33,)

T = +5 0C (Ubd

=33,)

T = 0 0C (Ubd

=33,)

E.Popova 04.07.2011 NDIP 17

0 1 2 3 4 5 6 7 8 9100

101

102

103

104

105

106

SiPM 100B 1x1mm 2 ∆ U= 4.7V MPPC S10362-11-100U No.50 1x1mm 2 ∆ U=1.25VD

ark

rate

, Hz

threshould, pixels