la5ca9cu24o41 layers as 1d heat spreaders for thermal ...445 . 455 . 465 475 485 . 495 . 1149 1161...
TRANSCRIPT
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La5Ca9Cu24O41 Layers as 1D Heat Spreaders for
Thermal Management Solutions
Charis Orfanidou
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Overview
2
• Thermal Management Problem
& Solution – The Idea
• The La5Ca9Cu24O41 material
• Equations
• Set up problem, Mesh & Results
• Conclusions
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R. Viswanath et al., Intel Technology Journal, Q3, 2000
Hot Spot
• Operating System Flux
Spots, Hot Spots
• Operating at high T more possibilities to
failure
Thermal Management Problem
3
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Charis Orfanidou 4
Thermal Management Solution – The Idea
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The La5Ca9Cu24O41 material
c
b
a
Thermal Conductivity
5
at Room Temperature:
κa = κb ≈ 1 W/m·K
&
κc ≈ 100 W/m·K
La5Ca9Cu24O41 layer c-axis oriented :
Thermally Conducting but electrically insulating
C. Hess et al., Physical Review B, vol.64, 2001
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Equations
6
The heat conduction was modeled by solving the steady state, two-dimensional heat conduction equation:
A normal heat flux is applied at the top of the silicon operating elements using Fourier’s law:
Qy = heat flux T = absolute temperature
κx, κy = local values of thermal conductivity
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Charis Orfanidou 7
Set up problem
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x
y
8
Mesh
• Free Triangular
• 3074 elements
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Set up problem
9 Charis Orfanidou
300 K
Silicon (3,4μm)
Operating elements (50nm x 50nm) Si
Heat Flux: 108 W/m2
Silicon Sub (500μm)
1μm
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Set up problem
10 Charis Orfanidou
Silicon
Silicon
Silicon
La5Ca9Cu24O41
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Set up problem
11 Charis Orfanidou
La5Ca9Cu24O41 (3,4μm)
Silicon Substrate (500μm)
300 K
Hot Spot: 1010 W/m2 heat flux, adjacent operating elements: 108 W/m2
1μm
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12 Charis Orfanidou
Silicon
Silicon
Silicon
La5Ca9Cu24O41
Set up problem
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Isotherms
13
Silicon La5Ca9Cu24O41
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Temperature Profiles
14 Charis Orfanidou
1K
0.5K
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Conclusions
• Introducing La5Ca9Cu24O41 layers → “protecting” the adjacent operating elements due to the 1D heat conduction
• Although we are introducing thermal resistance in the device we reduce the T of the adjacent operating elements by almost 1 degree
• Each degree reduction of temperature in the electronic devices can increase their lifetime!
• Simulate layers of the order of nanometers • How much we can approach reality by using
COMSOL Multiphysics
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Acknowledgements
16
Prof. Ioannis Giapintzakis Materials Science Group, Mechanical and Manufacturing Engineering Department, UCY
This work was supported by the European Commission through the ITN Marie Curie LOTHERM
Charis Orfanidou
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THANK YOU FOR YOUR ATTENTION !!
Charis Orfanidou
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Charis Orfanidou 18
Operating Temperature, κLCCO = {1, 100, 1} W/m*K
ΔT = 0.35 K
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Charis Orfanidou 19
Operating Temperature, κLCCO = {1, 550, 1} W/m*K
ΔT = 0 K
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Tem
pe
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K)
N cells
HS Temp (Si)
HS Temp (LCCO)
1st adjacent (3rd element) Temp (Si)
1st adjacent (3rd element) Temp (LCCO)