l3 thyristor characterstics contd
TRANSCRIPT
EE-321 N
Lecture-3Thyristor Characteristics Contd
&Thyristor Turn ON Methods
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Supplying Gate Current
• The forward break over voltage can bereduced if a current is supplied through thegate terminal
• Higher the magnitude, lower will be theforward break over voltage
• This is illustrated next
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Effect of Gate current on forward BO voltage
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> >
Reverse Blocking Mode
• Anode –ve w. r. t. cathode. Junctions J1 & J3are reverse biased while J2 is forward biased
• Only a small leakage current flows (~µA)• Exactly similar to RB mode of a pn junction
diode• Device is said to be in OFF state• Avalanche BD of J1 & J3 occurs at a voltage
known as reverse breakdown voltage VBR
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SCR switching SummaryTurn ON Conditions1. VAK > 02. IDevice > IL
3. IG > 0Turn OFF Conditions1. IDevice < IH
2. Reverse bias onlyadds to reliability
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Device will continue to conduct even if IG is just one pulse
Thyristor turns OFF and remains OFF until turning ON conditions are satisfied
Two Transistor Model & Turn ON Mechanism of SCR
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• The collector current IC of a thyristor is related tothe emitter current IE and the leakage current ofthe collector-base junction, ICBO.
• The common-base current gain is defined as:
CBOEC III +=α
E
C
II
=α
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Therefore,
and
(Using KCL at T1)
I I IC A CBO1 1 1= +α
I I IC K CBO2 2 2= +α
)1(221121 CBOKCBOACCA IIIIIII +++=+= αα
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But,
(Using KCL at T2)
Substituting (2) into (1) and solving for IA:
)2(GAK III +=
)(1 21
212
ααα
+−++
= CBOCBOGA
IIII
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•On application of small magnitude of IG, IKincreases. Since IK = IE2, α2 also increases which inturn increases IC2.
•Thus IB1 and hence IE1 increases leading toincrease in α1. Ultimately, α1 + α2 → 1 and IA →∞
•Each transistor drives another one into saturationand device reaches conduction state.
• IA is practically limited by external circuitimpedance and the voltage drop is approx. that ofa single pn junction
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