Keysight 1GG7-4147100 kHz - 3 GHz BroadbandPower Amplifier

Data Sheet

Features

– Frequency range: 100 kHz –3 GHz

– High gain: 19 dB – Flat response: ± 1 dB

10 MHz–3 GHz – High isolation: –50 dB – Return loss:

input: –17 dB output: –8 dB

– High power output: 26.5 dBm saturated

– Harmonics: –37 dBc @ Pout = 21 dBm

– Unconditionally stable

– Chip size: 1530 × 910 μm (60.2 × 35.8 mils)

– Chip size tolerance: ± 10 μm (± 0.4 mils)

– Chip thickness: 127 ± 15 μm (5.0 ± 0.6 mils)

– Pad dimensions: 75 × 75 μm (2.95 × 2.95 mils), or larger

Description

The 1GG7-4147 is a monolithic, wideband amplifier designed and fabricated using TSO’s DF7M GaAs MESFET process. It features low distortion and delivers (typically) 26.5 dBm saturated output power into 50Ω over at least a 100 kHz to 3.0 GHz frequency range. The 1GG7-4147 is fabricated using the Keysight Technologies, Inc. GaAs FET process.

Absolute maximum ratings1

Symbol Parameters/conditions Min Max Units

VD1 Stage 1 drain supply +8.5 Volts

VD2 Driver drain supply +5.1 Volts

VD3 Output drain supply +8.5 Volts

VSS Source supply –5.5 –3.5 Volts

Pin CW input power 23 dBm

Tcase Operating case temperature2 –55 90 °C

Tstg Storage temperature –65 165 °C

Tmax Maximum assembly temperature (for 60 seconds maximum)

300 °C

ESD1 Electrostatic discharge damage level (1.5 KW, 100 pF), Unbiased, applied to any IC bond pad

±400 Volts

ESD2 Electrostatic discharge damage level (1.5 KW, 100 pF), biased, output pad thru DC blocking cap

±1000 Volts

1. Operation in excess of any one of these conditions may result in permanent damage to this device. Parameter specified at TA = 25 °C, except for Tcase, Tstg, and Tmax.

2. Max continuous operating temp to achieve 1 × 106 MTTF, while operating with VD1 = VD3 +8 V, VD2 = +5, VSS = –5 V. Derate MTTF by a factor of 2 for every 8 °C above this temperature.

02 | Keysight | 1GG7-4147 100 kHz - 3 GHz Broadband Power Amplifier - Data Sheet

RF specifications1

(VD1 = VD3 = +8 V, VD2 = +4.7 V, VSS = –5 V, Zin = Zo = 50Ω)

Symbol Parameters/conditions Min Typ Max Units

BW Guaranteed operating bandwidth2 .01 3 GHz

S21 Small signal gain 17 19 22 dB

ΔS21 Small signal gain flatness ±1 dB

RLin Input return loss –17 dB

RLout Output return loss –8 dB

S12 Reverse isolation –50 –50 dB

P1dB Output power at 1 db gain compression 25 dBm

Psat Saturated output power 25 26.5 dBm

H2,H3 Harmonics (Pout @ fundamental = 21 dBm) –35 –30 dBc

NF Noise figure (ƒ0 >100 MHz) 10 dB 10 dB

DC specifications/physical properties1

(Tchuck = 25 °C)2

Symbol Parameters/conditions Min Typ Max Units

ID1 First stage drain(VD1 = VD3 = +8 V, VD2 = +4.7 V, VSS = –5 V)

15 26 32 mA

ID2 Second stage drain current(VD1 = VD3 = +8 V, VD2 = +4.7 V, VSS = –5 V)

90 125 165 mA

ID3 Third stage drain current(VD1 = VD3 = +8 V, VD2 = +4.7 V, VSS = –5 V)

210 290 320 mA

ISS Source supply current(VD1 = VD3 = +8 V, VD2 = +4.7 V, VSS = –5 V)

45 71 95 mA

PDC DC power dissipation(VD1 = VD3 = +8 V, VD2 = +4.7 V, VSS = –5 V)

3.5 Watts

1. Data obtained from on–wafer measurements. All voltages specified at device pads.2. ID2 and ID3 values are temperature-sensitive parameters. Values measured in a packaged or heat-sunk condition will be up to 20 % lower than

measured on-wafer.

1. Data obtained from measurements on individual devices mounted in an Keysight 83040 series modular microcircuit package @ Tcase = 25 °C.2. Performance may be extended to lower frequencies through the use of off–chip circuitry. Upper corner frequency ≈ 4.3 GHz.

03 | Keysight | 1GG7-4147 100 kHz - 3 GHz Broadband Power Amplifier - Data Sheet

Applications

The 1GG7-4147 is designed for use as a broadband power amplifier in communication systems and microwave instrumentation. It is ideally suited for 100 kHz to 3 GHz applications where high output power, flat gain and low distortion are required.

Biasing

This device should be biased such that VSS = –5 V, VD1 = VD3 = +8 V, and VD2 = +4.7 V. This may be accomplished in several ways. Three separate supplies may be used to directly provide the required voltages. Alternatively, two supplies (–5, +8 V) may be used. In the latter case, the +4.7 V bias for VD2 may be derived from the +8 V supply with a variable resistor or regulator.

In addition to applying the proper voltages to the device, the off–chip impedances presented to VSS, VD2, and VD3 must be controlled. In particular, the VSS pad must be bypassed to provide an RF ground while VD2 and VD3 must be biased through a high impedance across the desired operating frequency range. This high impedance bias may be accomplished using chokes, active loads, or a combination of these components. VD1 bypassing is not critical.

To prevent damage to the device, the VSS supply should be turned on before the positive supplies during power up, and turned off after the positive supplies during power down. VSS must never be open circuited during operation.

The input and output of the 1GG7-4147 are DC coupled. The input pad will float at –5 V while the output pad is used to provide the VD3 bias and as a result will be at +8V. To prevent the disturbance of internal bias nodes, DC-blocking capacitors must be used on the input and output. The pads labelled VTH, M1, M2, and M3 are internal voltage monitor points and may be ignored.

Prolonged operation with maxi mum saturated output power into an open circuit should be avoided to prevent the possibility of long-term performance degration to the 1GG7-4147 device.

Assembly Techniques

Solder die attach using a AuSn solder preform is the recommended assembly method. Gold thermosonic wedge bonding with 0.7 mil wire is recommended for all bonds. Tool force should be 22 grams ±1 gram, stage temperature is 150 ± 2 °C, and ultrasonic power of 64 ± 1 dB and 76 ± 8 msec, respectively. The top and bottom metallization is gold.

GaAs MMICs are ESD sensitive. ESD preventive measures must be employed in all aspects of storage, handling, and assembly.

MMIC ESD precautions, handling considerations, die attach and bonding methods are criti- cal factors in successful GaAs MMIC performance and reliability.

The Keysight GaAs MMIC ESD, Die Attach and Bonding Guidelines - Application Note (5991-3484EN) provides basic information on these subjects.

04 | Keysight | 1GG7-4147 100 kHz - 3 GHz Broadband Power Amplifier - Data Sheet

VSS

VD1 M1 VD2

M2

M3RF

VD3

Input

RF Output

Notes— Chip top-side grounds and metalized chip

backside connected through conductive Vias

VSS Bypass

VTH

GND

Figure 1. 1GG7-4147 schematic

RoHS Compliance

This device is RoHS Compliant. This means the component meets the requirements of the European Parliament and the Council of the European Union Restriction of Hazard-ous Substances Directive 2011/65/EU, commonly known as RoHS. The six regulated substances are lead, mercury, cadmium, chromium VI (hexavalent), polybrominated biphenyls (PBB) and polybrominated biphenyl ethers (PBDE). RoHS compliance implies that any residual concentration of these substances is below the RoHS Directive’s maximum concentration values (MVC); being less than 1000 ppm by weight for all substances except for cadmium which is less than 100 ppm by weight.

05 | Keysight | 1GG7-4147 100 kHz - 3 GHz Broadband Power Amplifier - Data Sheet

Notes— Part numbers for recommended Keysight components shown in parenthesis.— All device bonds are 0.7 mil dia. gold wire

To VD2 Supply

To VD3 Supply

To VD1 Supply

CD1

Cin Cout

CSSCBypass

LSS

25 mil thick input and output

≥ 50 pF chip cap.

10 mil nom.gap

25 mil wide (50 Ω ) trace

≥ 4 µH wire wound toroidal

10 mil nom.gap

inductor.

monoblock capacitor

≥1250 pF Chip Capacitor

R

VSS Supply

LD2

LD3

To

TC754 Pedestal(5001-3961)

thin film circuit w/≥ 4.7 nF

(0160-3641)

(5081-8152)

(0160-5840)

1.5 mil dia gold bondwire to ≥15 nF DC feedthru (0160-5052)

(5086-2160)

75 200 325 760 950

835

455

195

75

260 450 950760GND2

1105GND3

VD1 VTH(NC)

M3(NC) (NC)

VSS

M1 M2

655

455

250

1105450

VD2

OUTIN

VSS

BYPASS

75

1450

1450

910(± 10)

1530(± 10)

(NC) (NC)

GND2 GND1 GND3

Notes— No bonding required on GND

pads (Chip top-side grounds and metalized chip backside connected through conductive Vias)

— All dimensions in microns.— Small pad dim: 75 x 75 µm.— VSS pad dim: 325 × 75 μm.— GND1 & 2 pad dim: 320 × 75 μm.— GND3 & 4 pad dim: 450 × 75 μm.— All tolerances: ± 5 μm

(unless otherwise noted).— Chip thickness: 127 ± 15 μm.

Figure 2.1GG7-4147 bond pad locations

Figure 3. 1GG7-4147 assembly diagram (for 10 MHz to 3 GHz operation)

06 | Keysight | 1GG7-4147 100 kHz - 3 GHz Broadband Power Amplifier - Data Sheet

Small-signal characteristics (dB)

Freq(GHz)

Inpu

t Ret

urn

Loss

(dB

)

Out

put R

etur

n Lo

ss (d

B)

S11

S22

Small-signal chaaracteristics (dB)

Freq(GHz)

Gai

n (d

B)

Isol

atio

n (d

B)

S21

"S12"

(VD1 = V D3 = +8.0 V,VD2 = +4.7 V,VSS = -5.0 V)† ( VD1 = V D3 = +8.0 V,VD2 = +4.7 V,VSS = -5.0 V) †

-30

-25

-20

-15

-10

-5

0

5

10

-30

-25

-20

-15

-10

-5

0

5

10

0 2 4 6 8 10

S 11

S 22

-40

-30

-20

-10

0

10

20

30

40

0 2 4 6 8 10

-80

-70

-60

-50

-40

-30

-20

-10

0

S21

S12

Figure 4. Typical gain and reverse isolation vs. frequency Figure 5. Typical input and output return loss vs. frequency

Freq. S11 S12 S21 S22

(MHz) dB Mag Ang dB Mag Ang dB Ang Ang dB Mag Ang

1 –31.9 0.025 –79.4 –95.2 0.0000 –113.9 19.4 9.370 –166.2 –9.4 0.336 1.1

10 –31.8 0.026 –76.6 –89.1 0.0001 –107.1 19.4 9.353 –169.8 –9.5 0.335 –2.6

20 –31.4 0.027 –73.5 –83.4 0.0001 –99.5 19.4 9.334 –171.6 –9.6 0.331 –3.8

50 –30.4 0.030 –64.2 –79.0 0.0001 –76.7 19.3 9.275 –176.7 –9.7 0.327 –4.2

100 -22.2 0.078 –47.5 -77.3 0.0001 –59.6 19.6 9.502 175.9 -15.4 0.170 –5.8

200 -27.0 0.044 –10.3 -73.2 0.0002 86.8 19.5 9.460 163.7 -15.2 0.173 –17.0

500 -27.0 0.044 17.2 -65.9 0.0005 95.0 19.4 9.305 145.4 -14.0 0.199 –32.3

750 -25.3 0.054 26.3 -63.1 0.0007 99.1 19.3 9.221 127.8 -12.8 0.229 –47.5

1000 -23.8 0.065 27.9 -59.9 0.0010 99.2 19.2 9.113 109.8 -11.8 0.256 –62.4

1250 -22.3 0.077 26.9 -59.0 0.0011 99.3 19.3 9.218 91.7 -11.3 0.273 –76.9

1500 -20.7 0.092 23.0 -57.5 0.0013 98.7 19.4 9.354 73.3 -11.1 0.278 –90.6

1750 -19.2 0.110 16.7 -56.1 0.0016 95.9 19.6 9.526 54.1 -11.1 0.278 –104.1

2000 -17.9 0.127 5.8 -54.4 0.0019 91.1 19.6 9.555 34.3 -10.9 0.285 –116.6

2250 -17.2 0.138 –10.9 -53.3 0.0022 87.4 19.8 9.814 13.9 -10.3 0.304 –128.8

2500 -17.2 0.138 –29.0 -52.5 0.0024 83.2 19.9 9.864 –7.8 -9.4 0.339 –140.3

2750 -17.3 0.137 –46.4 -52.5 0.0024 79.2 19.8 9.816 –31.2 -8.6 0.374 –151.2

3000 -17.5 0.134 –63.0 -51.9 0.0025 76.6 20.1 10.139 –55.3 -7.9 0.404 –160.3

3250 -17.7 0.130 –77.7 -52.0 0.0025 75.4 20.1 10.104 –80.1 -7.4 0.426 –168.3

3500 -18.3 0.121 –91.3 -51.6 0.0026 74.2 20.2 10.187 –105.6 -7.3 0.431 –173.3

3750 -19.0 0.112 –105.4 -51.3 0.0027 74.8 20.1 10.119 –131.4 -7.7 0.414 –175.8

4000 -19.3 0.108 –120.5 -51.6 0.0026 75.7 20.1 10.093 –157.2 -9.0 0.355 –175.0

4250 -20.3 0.097 –136.9 -51.6 0.0026 74.8 19.7 9.617 177.7 -12.1 0.247 –173.0

4500 -21.6 0.084 –153.9 -52.1 0.0025 73.4 18.8 8.717 153.2 -16.0 0.158 –171.3

4750 -22.9 0.072 –170.4 -53.6 0.0021 69.1 17.2 7.223 130.0 -12.6 0.234 –171.7

5000 -23.7 0.065 174.3 -54.4 0.0019 66.7 15.0 5.645 109.3 -9.2 0.347 –174.5

Typical S-parameters1

(VD1 = VD3 = +8 V, VD2 = +4.7 V, VSS = –5 V, Zin = Zo = 50 W)

1. Data obtained from measurements on individal devices mounted in an Keysight 83040 series modular microcircuit package @TCASE = 25 °C

07 | Keysight | 1GG7-4147 100 kHz - 3 GHz Broadband Power Amplifier - Data Sheet

Additional 1GG7-4147 performance characteristics1

( VD1 = V D3 = +8 V, V D2 = +4.7 V,V SS = –5 V)

( VD1 = V D3 = +8 V, V D2 = +4.7 V,V SS = -5 V) ( VD1 = V D3 = +8 V, V D2 = +4.7 V,V SS = -5 V)

( VD1 = VD3 = +8 V, VD2 = +4.7 V,VSS = -5 V)

High-band noise figure performance

6.00

8.00

10.00

12.00

14.00

16.00

18.00

20.00

22.00

24.00

26.00

0.0100 0.1000 1.0000 10.0000Frequency (GHz)

Noi

se F

igur

e (d

B)

Output power vs. frequency

22

23

24

25

26

27

28

29

30

0 1 2 3 4 50 1 2 3 4 5

Freq (GHz)

Out

put

Pow

er (

dBm

)

Psat

P-1dB

Harmonic performance vs. frequency

20

30

40

50

60

70

80

90

100

Freq (GHz)

2nd,

3rd

Har

m (d

Bc)

2nd harmonics

3rd harmonics

Gain vs. temperature

25

26

27

28

29

30

31

32

0.15 0.5 1 2 3 4 4.5

Frequency (GHz)

Gai

n (d

B) -15 ˚C

0 ˚C45 ˚C70 ˚C

1. All data measured on individual devices mounted on a Keysight 83040 series modular microcircuit package @ TCASE = 25 °C, except where noted.

Figure 6. Typical small-signal gain vs. temperature

Figure 8. Typical 1 dB gain compression and saturated output power vs. frequency

Figure 7. Typical noise figure vs. frequency

Figure 9. Typical second and third harmonics vs. fundamental frequency at Pout = 21 dBm

08 | Keysight | 1GG7-4147 100 kHz - 3 GHz Broadband Power Amplifier - Data Sheet

This data sheet contains a variety of typical and guaranteed performance data. The information supplied should not be interpreted as a complete list of circuit specifications. Customers considering the use of this, or other Keysight Technologies GaAs ICs, for their design should obtain the current production specifications from Keysight. In this data sheet the term typical refers to the 50th percentile performance. For additional information contact Keysight at MMIC_Helpline@keysight.com.

The product described in this data sheet is RoHS Compliant. See RoHS Compliance section for more details.

09 | Keysight | 1GG7-4147 100 kHz - 3 GHz Broadband Power Amplifier - Data Sheet

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