itrs winter conference 2008 seoul, korea 1 work in progress: not for distribution 2008 itrs emerging...
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ITRS Winter Conference 2008 Seoul, Korea 1
Work in Progress: Not for Distribution
2008 ITRS
Emerging Research Materials
[ERM]
December 9, 2008
Michael Garner – IntelDaniel Herr – SRC
ITRS Winter Conference 2008 Seoul, Korea 2
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2008 ERM ParticipantsHiro Akinaga AISTNobuo Aoi MatsushitaKoyu Asai RenesasYuji Awano FujitsuDaniel-Camille Bensahel STMBill Bottoms NanonexusGeorge Bourianoff IntelAlex Bratkovski HPJohn Carruthers Port. State Univ.U-In Chung SamsungHongjie Dai Stanford Univ.Jean Dijon LETISatoshi Fujimura TOKMichael Garner Intel Joe Gordon IBMDaniel Herr SRCJim Hutchby SRCKohei Ito Keio Univ.James Jewett IntelTed Kamins HP Dae-Hong Ko Yonsei UniversityLouis Lome IDA cons.
Francois Martin LETIFumihiro Matsukura Tohoku UYoshio Nishi StanfordYaw Obeng NISTNachiket Raravikar IntelCurt Richter NISTDave Roberts Air ProductsTadashi Sakai ToshibaMitusru Sato TOKSadasivan Shankar IntelAtsushi Shiota JSRMicroKaushal Singh AMATNaoyuki Sugiyama TorayShinichi Tagaki U of TokyoKoki Tamura TOKYasuhide Tomioka AISTKen Uchida ToshibaBert Vermiere Env. Metrol. Corp.Yasuo Wada Toyo UVijay Wakharkar IntelKang Wang UCLAH.S. Philip Wong Stanford UniversityHiroshi Yamaguchi NTTToru Yamaguchi NTTVictor Zhirnov SRC
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Outline
ERM Goals, Scope, Plans, and Projected Timing ERM for extending CMOS
Alternate Channel Materials Lithography FEP Interconnects
ERM for Beyond CMOS Assembly & Packaging Example ERM Metrology & Modeling Needs ESH Summary
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Macromolecular Scale Devices are on the ITRS Horizon
ITRS
Revised 2006 from: D. Herr and V. Zhirnov, Computer, IEEE, pp. 34-43 (2001).
Macromolecular Scale Components:Low dimensional nanomaterialsMacromoleculesDirected self-assemblyComplex metal oxidesHetero-structures and interfacesSpin materials
Macromolecular Scale Devices
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Emerging Research Materials [ERM]
Goal: Identify critical ERM technical and timing requirements for ITWG identified applications
Align ERM requirements with ITWG needsIdentify difficult research challenges that must be overcomeERM that exhibit potential to address ITWG gaps and requirements
Consolidate materials research requirements for:University and government researchers
Chemists, materials scientists, etc.Industry Researchers
Semiconductor Chemical, material, and equipment suppliers
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2008 Key Messages
No updates in ERM Chapter in 2008
Preparations for 2009 ERM Chapter Establish Critical Assessment Process Add ERD Alternate Channel Materials Increase Focus on Carbon Based Devices Workshops In Process
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Emerging Research Materials: Workshop Calendar
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ERM Potential Insertion Matrix
Earliest Potential Insertion Horizon
Current Application
3-5 yrs. 5-10 yrs. 10-15 yrs. 15+ yrs.Not on
Roadmap
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2009 ERM Critical Assessment Candidates
Materials ERD Memory
ERD Logic Lithography FEP Interconnects Assembly and Package
Alternate Channel Material
Critical Assessment
Low Dimensional Materials
Critical Assessment
Critical Assessment: Vias and Interconnects
Critical Assessment: Nano-tubes/solders for chip attach
Macromolecules Critical Assessment
Self Assembled Materials
Critical Assessment
Spin Materials
Complex Metal Oxides
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ERM Assessment Matrix: Ex. Lithography
Rating Person
Lithography Materials Evaluation Table: Novel Macromolecules
Average Potential
Sum PotentialDemonstrated
ResolutionDefect Density Speed LER
Ability to Simultaneously Achieve Resolution,
Sensitivity, & Line Edge Roughness
Etch Compatibility
(hard mask compatible)
Outgassing (EUV) Stripablity
Research Target
Novel Molecules for Dual Exposure Resist
Novel Molecules for Dual Exposure CEL
Non CAR Resist Self Assembly (graphepitaxy) Hybrid Resist & Self Assembly
Surface Patterned Self Assembly
Average #DIV/0! #DIV/0! #DIV/0! #DIV/0! #DIV/0! #DIV/0! #DIV/0! #DIV/0! #DIV/0! #DIV/0!
StdDev#DIV/0! #DIV/0! #DIV/0! #DIV/0! #DIV/0! #DIV/0! #DIV/0! #DIV/0! #DIV/0! #DIV/0!
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Extending CMOS Alternate Channel Materials
Alternate Channel Materials
Ge & III-V Compounds
Nanowires
Graphene
Carbon Nanotubes
III-V Heterostructures(L. Samuelson, Lund Univ.)
P. Kim, Columbia Univ.
Carbon Nanotube FETSource Intel
Assess
Materials Performance
Gate materials
Contacts
Interfaces
MOS
Also Identify Novel Metrology & Modeling Needs
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ERM to Extend Moore’s Law
Lithography
Novel molecules
Directed Self Assembly
P. Nealey, U. Wisc.
Dendrimers, Frechet, UC-B
OR
RO
RO
OR RO
OR
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Molecular Glasses
Ober, Cornell
Ross, MIT
Via
Wire
Via
Wire
InterconnectsFront End Processes
Y. Awano, Fujitsu
Nanotubes
Nanowires
Self Assembled Materials
Directed Self Assembly
Selective Deposition
Selective Etching
Deterministic Doping
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Deterministic Doping:Assess the Impact of Ordered Dopant
Arrays on Device PerformanceApproach: Fabricate semiconductors with various ordered distributions of dopant atoms and compare their performance with that of existing semiconductors that have a random arrangement of dopant atoms.
Sour
ce
Dra
in
ChannelGat
e
?Ordered distribution of dopant atoms
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Beyond CMOS Materials & Interfaces
Assess Ferromagnetic Materials, Dilute Magnetic Semiconductors Complex Metal Oxides Strongly Correlated Electron State Materials (FE, FM, FE & FM) Molecules [Potential Transition Out of ERM] Interfaces & “state” transport materials
Spin StateMolecular StateFerroelectric
Polarization
Resistance Change
Mechanical State
Electrochemical
Atomic SwitchFE FETIndividual or Collective
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Emerging Packaging Applications
Thermal Nanotubes
High Density Power Delivery Capacitors
Dielectrics: High K
Self Assembly
Interconnects: Nanotubes or Nanowires
Package Thermo-Mechanical
Substrate: Nanoparticles, Macromolecules
Adhesives: Macromolecules, Nanoparticles
Chip Interconnect: Nanoparticles
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Emerging Metrology and Modeling Needs Metrology
Chemical and structural imaging and dimensional accuracy at the nm scale [Nondestructive, 3D imaging]
Low dimensional material properties (Mapping) Nano-interface characterization (carbon) Simultaneous spin and electrical properties nm scale characterization of vacancies and defects
Modeling Materials and Interfaces Low dimensional material synthesis & properties Spin material properties Strongly correlated electron material properties
Long range and dynamic Integrated models and metrology (de-convolution of nm scale
metrology signals) Metrology and modeling must be able characterize
and predict performance and reliability
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Environment, Safety, and Health
Metrology needed to detect the presence of nanoparticles
Research needed on potential undesirable bio-interactions of nanoparticles
Need Hierarchical Risk/Hazard assessment protocol Research, Development, Commercialization
Leverage Existing Research and Standards Activities
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2009 Emerging Research Materials Summary Establish ERM Outline and Writing Assignments
Restructuring to Application Centric organization Establish links to other ITWG chapters, as warranted
Complete Critical Assessment Process Critical Assessment: CMOS Extension, Interconnect, and Lithography Beyond CMOS: Trends on critical materials & properties
Complete ERM Workshops All workshops identify Metrology, Modeling and ESH support as
appropriate
Finalize new materials needs and transitions ERD, Lithography, FEP, Interconnects, Assembly & Packaging, PIDS Establish Concrete targets Functional Diversification
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Thank YouWhat
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