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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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©2013 Fairchild Semiconductor Corporation 1 www.fairchildsemi.comFGB20N60SFD_F085 Rev. C1

FGB

20N60SFD

_F085 600V, 20A Field Stop IG

BT

October 2013

Absolute Maximum RatingsSymbol Description Ratings Units

VCES Collector to Emitter Voltage 600 V

VGES Gate to Emitter Voltage ± 20 V

ICCollector Current @ TC = 25oC 40 A

Collector Current @ TC = 100oC 20 A

ICM (1) Pulsed Collector Current @ TC = 25oC 60 A

IFDiode Forward Current @ TC = 25oC 20 A

Diode Forward Current @ TC = 100oC 10 A

IFM(1) Pulsed Diode Maximum Forward Current 60 A

PDMaximum Power Dissipation @ TC = 25oC 208 W

Maximum Power Dissipation @ TC = 100oC 83 W

TJ Operating Junction Temperature -55 to +150 oC

Tstg Storage Temperature Range -55 to +150 oC

TLMaximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 oC

FGB20N60SFD_F085600V, 20A Field Stop IGBT

D2-PAK G

E

C

E

C

G

Features • High current capability• Low saturation voltage: VCE(sat) = 2.2V @ IC = 20A• High input impedance• Fast switching • Qualified to Automotive Requirements of AEC-Q101 • RoHS complaint

Applications• Inverters, SMPS, PFC, UPS

• Automotive Chargers, Converters, High Voltage Auxiliaries

General DescriptionUsing novel field-stop IGBT technology, Fairchild’s new seriesof field-stop IGBTs offers the optimum performance for automotive chargers, inverters, and other applications where low conduction and switching losses are essential.

Thermal CharacteristicsSymbol Parameter Ratings Units

RθJC(IGBT) Thermal Resistance, Junction to Case 0.6 oC/W

RθJC(Diode) Thermal Resistance, Junction to Case 2.6 oC/W

RθJA Thermal Resistance, Junction to Ambient (PCB Mount)(2) 75 oC/W

( 2)

Symbol Parameter Typ. Units


FGB

20N60SFD


BT

Package Marking and Ordering Information

Device Marking Device PackagePackaging

Type Qty per Tube

Max Qty

per BoxFGB20N60SFD FGB20N60SFD_F085 TO-263 Tube 50ea -

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics

BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA 600 - - V

ΔBVCESΔTJ

Temperature Coefficient of BreakdownVoltage VGE = 0V, IC = 250μA - 0.79 - V/oC

ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250μA

ICES at 80%*BVCES, 150oC - - 250

IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA

On Characteristics

VGE(th) G-E Threshold Voltage IC = 250μA, VCE = VGE 4.0 4.8 6.5 V

VCE(sat) Collector to Emitter Saturation VoltageIC = 20A, VGE = 15V - 2.2 2.85 V

IC = 20A, VGE = 15V, TC = 125oC - 2.4 - V

Dynamic Characteristics

Cies Input CapacitanceVCE = 30V, VGE = 0V, f = 1MHz

- 940 1250 pF

Coes Output Capacitance - 110 146 pF

Cres Reverse Transfer Capacitance - 40 53 pF

Switching Characteristics

td(on) Turn-On Delay Time

VCC = 400V, IC = 20A,RG = 10Ω, VGE = 15V,Inductive Load, TC = 25oC

- 10 13 ns

tr Rise Time - 16 21 ns

td(off) Turn-Off Delay Time - 90 120 ns

tf Fall Time - 24 36 ns

Eon Turn-On Switching Loss - 0.31 0.41 mJ

Eoff Turn-Off Switching Loss - 0.13 0.21 mJ

Ets Total Switching Loss - 0.44 0.59 mJ

td(on) Turn-On Delay Time

VCC = 400V, IC = 20A,RG = 10Ω, VGE = 15V,Inductive Load, TC = 125oC

- 12 16 ns

tr Rise Time - 16 21 ns

td(off) Turn-Off Delay Time - 95 126 ns

tf Fall Time - 28 43 ns

Eon Turn-On Switching Loss - 0.45 0.60 mJ

Eoff Turn-Off Switching Loss - 0.21 0.38 mJ

Ets Total Switching Loss - 0.66 0.88 mJ

Qg Total Gate ChargeVCE = 400V, IC = 20A,VGE = 15V

- 63 95 nC

Qge Gate to Emitter Charge - 7 11 nC

Qgc Gate to Collector Charge - 32 48 nC


FGB

20N60SFD


BT

Electrical Characteristics of the Diode TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max Units

VFM Diode Forward Voltage IF = 10A TC = 25oC - 1.9 2.5 VTC = 125oC - 1.7 -

trr Diode Reverse Recovery Time

IES = 10A, dIES/dt = 200A/μs

TC = 25oC - 111 - nsTC = 125oC - 204 -

Qrr Diode Reverse Recovery Charge TC = 25oC - 174 244 nCTC = 125oC - 463 -

Notes:1: Repetitive rating: Pulse width limited by max. junction temperature

2:Rthjc for D2-PAK: according to Mil standard 883-1012 test method. Rthja for D2-PAK: according to JESD51-2, test method environmental condition and JESD51-3,low effective thermal conductivity test board for leaded surface mount package.

thermal measurements. JESD51-2: Integrated Circuits Thermal Test Method Environmental Conditions - Natural Convection (Still Air).


FGB

20N60SFD


BT

Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics Characteristics

Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE Temperature at Variant Current Level

0.0 1.5 3.0 4.5 6.00

20

40

60

20VTC = 25oC

15V12V

10V

VGE = 8V

Col

lect

or C

urre

nt, I

C [A

]

Collector-Emitter Voltage, VCE [V]0.0 1.5 3.0 4.5 6.0

0

20

40

6020VTC = 125oC

15V12V

10V

VGE = 8V

Col

lect

or C

urre

nt, I

C [A

]

Collector-Emitter Voltage, VCE [V]

0 1 2 3 4 50

20

40

60Common EmitterVGE = 15VTC = 25oC

TC = 125oC

Col

lect

or C

urre

nt, I

C [A

]

Collector-Emitter Voltage, VCE [V]0 2 4 6 8 10 12

0

20

40

60Common EmitterVCE = 20V

TC = 25oC TC = 125oC

Col

lect

or C

urre

nt, I

C [A

]

Gate-Emitter Voltage,VGE [V]

25 50 75 100 1251

2

3

4

40A

20A

IC = 10A

Common EmitterVGE = 15V

Col

lect

or-E

mitt

er V

olta

ge, V

CE [V

]

Collector-EmitterCase Temperature, TC [oC]0 4 8 12 16 20

0

4

8

12

16

20

IC = 10A

20A

40A

Common EmitterTC = -40oC

Col

lect

or-E

mitt

er V

olta

ge, V

CE

[V]

Gate-Emitter Voltage, VGE [V]


FGB

20N60SFD


BT


Figure 7. Saturation Voltage vs. VGE Figure 8.

0 4 8 12 16 200

4

8

12

16

20

IC = 10A

20A

40A

Common EmitterTC = 25oC

Col

lect

or-E

mitt

er V

olta

ge, V

CE

[V]

Gate-Emitter Voltage, VGE [V]0 4 8 12 16 20

0

4

8

12

16

20

IC = 10A

20A

40A

Common EmitterTC = 125oC

Col

lect

or-E

mitt

er V

olta

ge, V

CE

[V]

Gate-Emitter Voltage, VGE [V]

Saturation Voltage vs. VGE

Figure 9. Capacitance Characteristics Figure 10.

0.1 1 100

500

1000

1500

2000

2500Common EmitterVGE = 0V, f = 1MHz

TC = 25oC

Cres

Coes

Cies

Cap

acita

nce

[pF]

Collector-Emitter Voltage, VCE [V]30 0 20 40 60 80

0

3

6

9

12

15Common EmitterTC = 25oC

300V

200V

VCC = 100V

Gat

e-E

mitt

er V

olta

ge, V

GE [V

]

Gate Charge, Qg [nC]

Gate charge Characteristics

Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs.

0 10 20 30 40 50

10

100Common EmitterVCC = 600V, VGE = 15VIC = 20A

TC = 25oC

TC = 125oC

td(on)

tr

Switc

hing

Tim

e [n

s]

Gate Resistance, RG [Ω]1 10 100 1000

0.01

0.1

1

10

100

1ms

10 ms

DC

*Notes: 1. TC = 25oC 2. TJ = 150oC 3. Single Pulse

10μs

100μs

Col

lect

or C

urre

nt, I

c [A

]


Gate Resistance


FGB

20N60SFD


BT


Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs. Gate Resistance Collector Current

Figure 15. Turn-off Characteristics vs. Figure 16. Switching Loss vs. Gate Resistance Collector Current

Figure 17. Switching Loss vs. Collector Current Figure 18. Turn off Switching SOA Characteristics

0 10 20 30 40 50 6010

100

1000Common EmitterVCC = 600V, VGE = 15VIC = 20A

TC = 25oC

TC = 125oC

td(off)

tf

Sw

itchi

ng T

ime

[ns]

Gate Resistance, RG [Ω]0 10 20 30 40

10

100Common EmitterVGE = 15V, RG = 10Ω

TC = 25oC

TC = 125oC

tr

td(on)

Sw

itchi

ng T

ime

[ns]

Collector Current, IC [A]

0 10 20 30 4010

100


TC = 25oC

TC = 125oC td(off)

tf

Sw

itchi

ng T

ime

[ns]

Collector Current, IC [A]0 10 20 30 40 50 60

0.1

1

Common EmitterVCC = 600V, VGE = 15VIC = 20A

TC = 25oC

TC = 125oC Eon

Eoff

Sw

itchi

ng L

oss

[mJ]

Gate Resistance, RG [Ω]

3

0 10 20 30 400.01

0.1

1


TC = 25oC

TC = 125oC Eon

Eoff

Switc

hing

Los

s [m

J]

Collector Current, IC [A]1 10 100 1000

1

10

100

Safe Operating AreaVGE = 15V, TC = 125oC

Col

lect

or C

urre

nt, I

C [A

]



FGB

20N60SFD


BT


Figure 19. Forward Characteristics Figure 20. Typical Reverse Current vs. Reverse Voltage

Figure 21. Stored Charge Figure 22. Reverse Recovery Time

Figure 23.Transient Thermal Impedance of IGBT

0 1 2 3 40.1

1

10

40

TJ = 75oC

TJ = 25oC

TJ = 125oC

Forward Voltage, VF [V]

Forw

ard

Cur

rent

, IF

[A]

0 100 200 300 400 500 6001E-3

0.01

0.1

1

10

100

TJ = 75oC

TJ = 25oC

TJ = 125oC

Reverse Voltage, VR [V]

Rev

erse

Cur

rent

, IR [u

A]

0 5 10 15 20

30

60

90

120

150

200A/μs

di/dt = 100A/μs

Rev

erse

Rec

over

y Ti

me,

t rr [

ns]

Forward Current, IF [A]0 5 10 15 20

0

50

100

150

200

250

200A/μs

di/dt = 100A/μs

Sto

red

Rec

over

y C

harg

e, Q

rr [n

C]

Forward Current, IF [A]

1E-5 1E-4 1E-3 0.01 0.1 1 100.01

0.1

1

Duty Factor, D = t1/t2

Peak Tj = Pdm x Zthjc + TC

0.010.02

0.10.05

0.2

single pulse

Ther

mal

Res

pons

e [Z

thjc

]

Rectangular Pulse Duration [sec]

0.5

t1

PDM

t2


FGB

20N60SFD


BT

Mechanical Dimensions

D2PAKD2PAK

Dimensions in Millimeters

9

FGB

20N60SFD


BT

TRADEMARKSThe following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used here in:1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONSDefinition of Terms

AccuPower™AX-CAP®*BitSiC™Build it Now™CorePLUS™CorePOWER™CROSSVOLT™CTL™Current Transfer Logic™DEUXPEED®

Dual Cool™EcoSPARK®

EfficentMax™ESBC™

Fairchild®

Fairchild Semiconductor®FACT Quiet Series™FACT®

FAST®

FastvCore™FETBench™FPS™

F-PFS™FRFET®

Global Power ResourceSM

GreenBridge™Green FPS™Green FPS™ e-Series™Gmax™GTO™IntelliMAX™ISOPLANAR™Marking Small Speakers Sound Louder and Better™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MicroPak2™MillerDrive™MotionMax™mWSaver®OptoHiT™OPTOLOGIC®

OPTOPLANAR®

PowerTrench®

PowerXS™Programmable Active Droop™QFET®

QS™Quiet Series™RapidConfigure™

Saving our world, 1mW/W/kW at a time™SignalWise™SmartMax™SMART START™Solutions for Your Success™SPM®

STEALTH™SuperFET®

SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS®

SyncFET™

Sync-Lock™®*

TinyBoost®TinyBuck®

TinyCalc™TinyLogic®

TINYOPTO™TinyPower™TinyPWM™TinyWire™TranSiC™TriFault Detect™TRUECURRENT®*μSerDes™

UHC®

Ultra FRFET™UniFET™VCX™VisualMax™VoltagePlus™XS™

®

™

Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary First ProductionDatasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

ANTI-COUNTERFEITING POLICYFairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support.Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

Rev. I66

tm

®

www.onsemi.com1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patentcoverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customerapplication by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are notdesigned, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classificationin a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorizedapplication, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, andexpenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if suchclaim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. Thisliterature is subject to all applicable copyright laws and is not for resale in any manner.

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