ipf: in-place x-filling to mitigate soft errors in sram-based fpgas
DESCRIPTION
SEU. =. High-level circuit description. alpha +. VSS. VDD. 0. 1. V=IR. Logic synthesis. I. p +. p +. n +. n +. R. +. Logic optimization. -. +. -. n -. +. IPF: In-Place X-Filling to Mitigate Soft Errors in SRAM-based FPGAs. -. +. -. Sensitive Area. V. SDC. - PowerPoint PPT PresentationTRANSCRIPT
Field-Programmable Logic and its Applications
Chania, September 5 – September 7, 2011
Zhe Feng1, Naifeng Jing2, GengSheng Chen3, Yu Hu4, and Lei He1
1. Electrical Engineering Department, University of California, Los Angeles 2. School of Microelectronics, Shanghai Jiao Tong University3. State Key Lab of Application Specific Circuits and Systems, Fudan University, Shanghai, China 4. Electrical and Computer Engineering Department, University of Alberta
Email: [email protected]; [email protected]
IPF: In-Place X-Filling to Mitigate Soft Errors in SRAM-based FPGAs
SRAM-based Field Programmable Gate Arrays (FPGAs) are vulnerable to Single Event Upsets (SEUs). We show that a large portion (40%-60% for the circuits in our experiments) of the total used LUT configuration bits are don’t care bits, and propose to decide the logic values of don’t care bits such that Soft Error Rate (SER) is reduced. Our approaches are efficient and do not change LUT level placement and routing. Therefore, they are suitable for design closure. For the ten largest combinational MCNC benchmark circuits mapped for 6-LUTs, our approaches obtain 20% chip level Mean Time To Failure (MTTF) improvements, compared to the baseline mapped by Berkeley ABC mapper, which is 3× more improvements compared to the existing best in-place IPD algorithm.
IntroductionSingle Event Upset (SEU)
Source− neutrons coming from cosmic rays
− alpha particles emitting from trace impurities in packaging materials, solder bumps, etc.
Impact– Change the states of SRAM cells.
– Change the logic function and routing.
p+
p-
n-
p+ n+ n+
+-+
-+-+
-Sensitive Area
VDD VSS0 1alpha+
I
V
R
V=IR
Figure thanks to Joseph Fabula et al. Xilinx
1 1
Not effected by the SEU!
Observability Don’t-cares
with a=1&b=1
Logic Masking
SEUs are created equally but not propagated equally.
Assigning Satisfiability Don’t Care (SDC) bit to a different value does not change logic function, placement and routing, but it may reduce SER.
2-LUTB
00 001 010 111 0
2-LUTC
00 001 010 011 1
2-LUTA
00 001 010 011 1
a
b
c
d
f
2-LUTB
00 001 010 111 0
2-LUTC
00 001 010 011 1
2-LUTD
00 001 110 111 1
2-LUTA
00 001 010 011 1
a
b
c
d
f
f = ab + ac + bcd + acd
2-LUTD
00 001 110 111 0
Failure rate = 0.2031 Failure rate = 0.1875
=
SDC
On average, 50.8% LUT bits are don’t cares when MCNC benchmark circuits are mapped to 6-input LUTs
LUT-Level Chip-levelABC IPF ABC IPF
alu4 0.34 0.24 0.36 0.28apex2 0.27 0.24 0.25 0.23apex4 1.55 0.96 1.64 1.39
des 1.79 1.69 4.16 3.63ex1010 1.21 1.13 1.62 1.43exp5p 0.7 0.67 0.93 0.88misex3 0.54 0.38 0.58 0.38
pdc 1.05 0.9 1.75 1.38seq 0.66 0.52 0.73 0.59spla 1.28 1.09 2.02 1.66
Failure Rate Ratio 1.00 0.83 1.00 0.83MTTF Improvement 1.00 1.20 1.00 1.20
Our approach decides states of SDC bits in all LUTs to increase the likelihood of masking soft errors in the their fanin cones thereby to improve the reliability of the circuit.
High-level circuit description
Logic synthesis
Logic optimization
IPF
Bitstream
Physical synthesis
In-Place Re-synthesis Flow
Motivation X-Filling Algorithm
Satisfiability Don’t Care Ratio Experiment Results
Obtain 20% chip level MTTF improvements, compared to the baseline mapped by Berkeley ABC mapper, which is 3x more improvements when compared to the existing best in-place IPD algorithm.