invited talk - bilaspur univ
TRANSCRIPT
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D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
Design and Fabrication of the
Guided Wave Devices atNorth Maharashtra University,
Jalgaon
D. K. Gautam
Department of Electronics,North Maharashtra University,
Jalgaon 425 001(MS) INDIA
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Present trends of Optoelectronics
Designing, modeling and
analysis of lasers and other
devices are being carried outOptimization of Optic fibers
In India In abroad
Optoelectronic materials thin
films
Device fabrication is being carriedout at few places
Standardization in design,analysis
and fabrication
Optoelectronics Integrated circuit
Micro-machineries, short wave
length lasers, optical computing
Applied opt-electronics equipment
Guided wave remote controlled
automatic equipments
D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
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D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
Optical Communication Networks are
being installed in India
Inevitable need for the developing the
INDEGENEOUS technologyfor Fabricating the components required for
the communication networks
Cost Effectiveness
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D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
Various Components required for the networks
Power Splitters /
CombinersModulators / switchesMulti/Demultiplexers
Isolators
Passive
Laser DiodeAmplifierLED
Active
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D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
Next Generation Computers and Integrated Circuits
Further Miniaturization forIncreased SpeedHigher Capacity
Tighter Confinement of Light
Photonic Crystal Devices
Demand for
That Needs
New class of Devices
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D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
Research & Development
strategy at N.M.U.
Department of Electronics
First Tire
Design &
Development
Laboratory
IndigenouslyDeveloped
Software
Tools
Second Tire
Sophisticated
Clean Room
Indigenously
Developed
Fabrication
Machines
Third Tire
Mass Scale
Production
facilities
Characterizationtools
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D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
Department of Electronics,
North Maharashtra University
Active / Passive Devices
Design
Established 10 years ago
One of the Pioneer Institutions to Initiate
the work related to optical guided wave devices
Capable of
Fabrication
Some Fabrication
Facilities have been
developed already, Work
is in progress to developother facilities
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D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
CAD Tools
CAD Tools Based on BPM and FDTDApplicable to the Passive Devices:
Optical Waveguide Waveguide Transitions, Bends, Junctions Optical Multi/demultiplexer
Tools for Quantum Well Structures
CAD Tools for the design of the Laser diode Blue Laser Diode
GaN/AlGaN Heterostructure Laser Diode
ZnO/MgZnO Heterostructure Laser Diode
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D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
Design Group
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Rib Waveguide Design
t
w
dhGT
SiO2 buffer layer
Guide layer
Upper clad layer
Silicon Substrate
D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
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D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
Guiding Film
Upper Clad
Air
Lower clad
Guiding Film
Upper Clad
Air
Lower clad
Guiding Film
Upper Clad
Air
Lower clad
Clad
Nef1
Guide
Nef2
Clad
Nef1
STEP I
STEPII
Non
Guidingregion
Guiding
region
w
dh
GT
Guide I GuideII
Guide III
Guide IV
Non
Guidingregion
Effective Index Method
Applied to the
Rib Waveguide Structure
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+=+ 2
0
0012
exp),,(),,( nn
jkzzyxezzyxE
=+n
nnn zjkyxEazzyxe )exp(),(),,( 0
=n
nn yxEazyxe ),(),,( 0
),(),,( 0 yxEzyxea nn +
=
Main Equations used to Implement the
Beam Propagation Algorithm
Decomposition to the
Fourier Components
Propagation in
Fourier Domain
Correction for
the perturbation
in Refractive
Index
Inverse Fourier Transform
D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
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Our Tools Applied for the Design of theOur Tools Applied for the Design of the
Directional Coupler Based DemultiplexerDirectional Coupler Based Demultiplexer
1,
2
1
2
s
w Guide I
Guide II
Advantage: Easy Fabrication Method
W=waveguide widthS=separation between the waveguides
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D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
Bpm simulation results for the propagation of
two wavelengths through the demux
1 = 1.3 m 2 = 1.304 m
Guide Separation = 2.5 m
Guide Thickness = 4.4 m
Rib Width = 9 m
Rib Height = 2 mClad Thickness = 2 m
Device Length = 7.3175 cm
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D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
Hetero-structure Laser Design
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Electrical Equations
Poissons Equation
Continuity Equations forelectrons and holes
Current density Equation
Physical EquationsPhysical Equations
Optical Equations
Wave Equation
Rate Equation forPhotons
Output CharacteristicsOutput Characteristics
D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
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Blue Laser Structure Used for the AnalysisBlue Laser Structure Used for the Analysis
n- Substrate
Lower clad
Active layer
Upper clad
p-contact
n-contact
x
Y
D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
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Structural Parameters used for AnalysisStructural Parameters used for Analysis
Layer Thickness
in
nanometer
Doping
Concentra-
tion in cm-3 .
Refractive
Index
% of
Magnesium
% of
Sulphur
Substrate
GaAs1180 3 * 1018 3.6
Lower
clad
ZnMgSSe
7677 * 10
17 2.5878 13 % 17 %
Active
layer
ZnSSe
50 1.7 * 1016 2.78 0 % 3 %
Upper
clad
ZnMgSSe
138 7 * 1016 2.5878 13 % 17 %
Device width: 60 micron
Channel width: 5 micron
Channel depth: 0.5 micron
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Plot of Intensity(relative) verses WavelengthPlot of Intensity(relative) verses Wavelength
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
503 505 507 509 511 513
Wavelength (nanometer)
Intensity
(re
lative
)
D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
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Field Intensity Distribution in X-direction
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
5 15 25 35 45 55
Distance X (micrometer)
Intens
it
D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
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Field intensity distribution in Y-direction
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
700 1000 1300 1600 1900 2200 2500
Distance Y (nanometer)
Intensit
Substrate Lower clad Upper
clad
Active layer
D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
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Waveguidestructure
used for the lightconfinement in
thevertical direction.
Waveguidestructure
used for the light
confinement in thehorizontal direction
Analysis of optical field confinement
Lower Clad ncn
Active Layernf
Upper Clad ncu
X
Y
X
Y
Nl Nm Nr
D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
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0
5
10
15
20
25
30
35
0 5 10 15 20 25 30 35
Channel width (micron)
Fullwidthath
alfmaximu
Full width of half maximum of field spreading as a
function of channel width at 507 nanometer
D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
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D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
Photonic Crystal Device Design
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D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
Photonic CrystalPhotonic Crystal - Photonic crystals are micro-
structured materials in which the dielectric constant isperiodically modulated on a length scale comparable to the
desired wavelength of operation and in which
electromagnetic waves of desired frequencies are forbidden.
WHAT IS PHOTONIC CRYSTAL?
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D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
Why Photonic Crystal ?
Most Important Points for today's VLSI/ULSI and Communication
Technology :
Speed Photonic crystals uses photons hence speed is greater thanelectro-optical devices.
Size Photonic crystals has the dimensions of nano-sizes hence verycompact size devices are possible.
Information carrying capacity Photonic crystals usesphotons hence information carrying capacity is greater.
All-optical ICs All-optical ICs can be developed because usingphotonic crystals various devises can be fabricated such as
lasers, filters fibers, multiplexer/demultiplexer,
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D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
Semiconductor
crystal
Semiconductor
crystal
PeriodicPotential
Dueto
Photonic
crystal
Photonic
crystal
Periodic
AtomicLattice
Bragg-likediffractio
n fromatomForbidden Gapfor electrons
PeriodicPotential
Dueto
Lattice of
macroscopicdielectricmedia
Bragg-scattering atthe dielectric
interfacesForbidden band gap(Photonic band gap)
for photons
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D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
One dimensional
photonic crystals
Periodic inone direction
x
yz
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D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
Two dimensionalphotonic crystals
Periodic in
two direction
x
yz
A)
B)
A) Dialectic rod PC with triangular lattice - lattice constant 700 nm, roddiameter 500 nm, rod height 3.9 m.
B) Air column PC with triangular lattice - lattice constant 580 nm, columnradius 430 nm, column height 4.2 m.
(Obtained by Reactive ion etching of Si)
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D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
Point Defect Planer DefectLine Defect
Resonant Cavity
(Traps Light)
Waveguide
(Transports Light)
PerfectDielectric mirror
(Reflects Light)
Defects in Photonic Crystals
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D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
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FabricationGroup
D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
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FHD Sol-gel PECVD
1. High growth rate
2. Porous Films
3. Poor uniformity
4. High temperatureprocess
5. Annealing needed
6. Cannot be used inmicroelectronics
1. High growth rate
2. Porous film
3. Poor uniformity
4. Low temperatureprocess
5. Annealing needed
1. High growth rate
2. Dense film
3. Good uniformity
4. Low temperatureprocess
5. Annealing notrequired
6. Useful for
microelectronics
High growth rate techniques
D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
Ch i l V D iti
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Chemical Vapor DepositionTechniquesSr.No.
Properties APCVD LPCVD PECVD
01. Temperature (
o
C) 300-500 500-900100-350
02. Materials SiO2
Poly-Si, SiO2,
Si3N
4, SiO
xN
y
Si3N
4, SiO
2,
SiOxN
y
03. Particles Many Few Many
04. Film Properties Good Excellent Excellent
05. Advantages Simple reactor,
Fast Deposition,
Excellent purity
and uniformity
Low temp, Fast
deposition
06. Disadvantages Poor stepcoverage &
particlecontamination
Low deposition
rate
Chemical and
Particulate
contamination
07. Applications Passivation,
Insulation
Gate metal,
Passivation,
Insulation
Final Passivation,
Insulation
D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
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TEOS
Solution is
Conventional CVD Technique
Use of Silane Dichloro - Silane
Toxic
Explosive
Pyrophoric
Corrosive
Dangerous in handling
Extra Safety Measures
required
More Deposition Cost
D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
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D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
TEOS-CVD
Reaction[Si(OC2H5)4] + O2 = SiO2 + by
products
Advantages
TEOS is nontoxic Non
Pyrophoric Stable, inertliquid
used inbubbler Handling iseasy
Deposited films Show
Excellentuniformity
Conformal stepcoverage Good filmproperties
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Why SiO2 Films for Optical Devices?
Matured Process Technology
Refractive Index matches with the
Optical Fiber
Minimizes the coupling losses
Polarization independent operation
Easy Fabrication
High integration capacityLow manufacturing cost
D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
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Why Si3N4 and SiOxNy Films?
Superior material properties like:
High density,
High electrical resistivity,
Resistance to sodium ion, Moisture permeation,
High thermal stability
Adjustable refractive index Adjustable film stress
D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
Optimization of process
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Optimization of processparameters
Growth
rate
Flow rate
Chamber pressureSubstrate
temperatureTEOS temperature
Reactor
geometry
Residence time
Material ofelectrodeInter electrodespacingElectrode type
RF Power
D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
Processing Parameters
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Processing Parameters
Sr.
No.Process parameter Physical value
1 Chamber Pressure 1 Torr
2 TEOS flow rate 3 SCCS
3 O2 flow rate 15 SCCS4 TEOS Bubbler temp. 450 C
5 RF power 40 W
6 RF frequency 13.56 MHz
7 Substrate temperature 300 0 C
D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
Thickness Profile of SiO Films by
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Thickness Profile of SiO2 Films by
PECVD
D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
Refractive Index Profile of SiO Films
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Refractive Index Profile of SiO2 Films
by PECVD
D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
FTIR Transmittance spectrum of SiO Films by PECVD
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FTIR Transmittance spectrum of SiO2 Films by PECVD
D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
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S.N. Si-O-Si stret-
ching (cm-1)
Si-O-Si
bending (cm-1)
Si-O-Si
rocking (cm-1)
FWHM Authors
01 1070 810 450 88 L. Zajickova et al
02 1074 820 --- 92.8 Ying-Chia CHEN
et al
03 1080 800 --- --- Kunio Okimura et
al
04 1069 --- --- --- K. Ramkumar et al
05
1072 820 447 --- Nur Selamoglu et
al
06 1080 --- --- 140 William J. Patricet al
07 1070 --- --- 67.7 K. Ishii et al
08 1076.2 814.3 447.5 85.68 Present study
Transmittance Spectra of SiO2 films by PECVD
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EDX of the deposited SiO2 films by PECVD
D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
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Surface MorphologySurface Morphology
Microphotograph of granular SiO2 film
D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
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Microphotograph of uniform SiO2 film
Surface MorphologySurface Morphology
D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
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FTIR Absorption Spectra of Deposited Si N Films
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FTIR Absorption Spectra of Deposited Si3N4 Films
Wavenumber (cm-1)
N-H Stretch
3378.8 cm-1
Si-H Stretch
Si-N-Si Stretch
N-H bending1179.9 cm-1
Si-NVibration
493.3 cm-1
N-H
1579.8 cm-1
Ab
sorp
tion
D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
C i S
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0
1
2
3
4
5
6
7
740 780 820 860
Deposition temperature (oC)
HConcentration(X1023c
m-3)
Si-H
N-H
H total
Total Hydrogen Concentration Vs. Substrate Temperature
D. K. Gautam, Department of Electronics, North Maharashtra University, Jalgaon-425 001 (MS) INDIA
SEM f D it d Sili Nit id Fil
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SEM of Deposited Silicon Nitride Films
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