PROCEEDINGS OF THE 18TH

INTERNATIONAL DISPLAY RESEARCHCONFERENCE

Asia Display '98

Papers Presented atSheraton Walker-HillSeoul, KoreaSept 28 - Oct. 1, 1998

Sponsored bySociety for Information Display &The Korean Physical Society

Available fromSociety for Information Display31 East Julian StreetSan Jose, CA 95112, USA

UB/TIB Hannover119 068 494

89

1: ASIA DISPLAY '98 FORMAL OPENING

Welcoming RemarksC. Lee, Asia Display '98 Conference ChairM.H. Oh, Asia Display '98 Executive Chair

2: PLENARY SESSION : KEYNOTE ADDRESS

An Economic and Business Perspective of the KoreanDisplay Industry 5Yoon-Woo Lee Samsung Electronics Co., Ltd.,Kyungki-Do, Korea

3: PLENARY SESSION : INVITED ADDRESSES

An LCD in the Multimedia Network Age: PolymerStabilized FLCD 11S. Kobayashi Science University of Tokyo, Yamaguchi,JapanPlasma Display Device Challenges 15L.F. Weber, Plasmaco Inc., Highland, NY

4: Poly-Si AMLCDs

Low Temperature Polycrystalline Si TFT-LCDs with aNovel Storage Capacitor 31H.J. Kim, B.H. Jung, DM. Kim, G.S. Moon,J.W. Hwang, T.H. Jung, CIV. Kim, J.H. SoukSamsung Electronics Co., Ltd., Kyungki-Do, KoreaPoly-CdSe-TFTs with Improved Passivation, SwitchingCharacteristics and Long Term Stability 35M. Frohna, E. LuederUniversity of Stuttgart, Stuttgart, GermanyEffect of Heat Transfer on Excimer Laser CrystallizationMechanism of Amorphous Silicon Films 39D.-G. Moon, J.-M. Yoon, W.-K. Park, H.-S. SonLG Electronics Inc., Kyungki-Do, Korea

5: Advanced LCDs /Reflective LCDs

5.1: Invited Paper. Advanced Liquid Crystal Displays 45T. Uchida Tohoku University, Miyagi, Japan

5.2: Full-Color Reflective TFT-LCD using R-OCB Mode withWide Viewing Angle and High Contrast 51M. Shibazaki, M. Miyai, K. Yoshida, Y. UgaiHosiden and Philips Display Corporation, Hyogo, JapanT. Ishinabe, T. Miyashita, T. Uchida Tohoku University,Sendai, Japan

5.3: Characterization of Paper-White Reflective PDLCMicrodisplay for Portable IT Applications 55G.Van Doorselaer, N. Carchon, J.Van den Steen,J. Vanfleteren, H.De Smet, D. Cuypers,A.Van Calster ELIS-TFCT / IMEC, University of Gent,Gent, Belgium

5.4: Application of Organic Insulator for Transmissive andReflective TFT-LCD 59J.H. Lee, H.R. Nam, CO. Jeong, S.K. Yim, C.W. Kim,J.H. Souk Samsung Electronics Co., Ltd., Kyungki-Do,Korea

; 6 : Field Emitter Displays

Invited Paper. Integration Parameters and Optimizationin Design and Fabrication of Full Color Field EmissionDisplay 65

J.M. Kim, N.S. Lee, J.E. Jung, Y.W. Jin, W.K. Yi,J.H. Lee, H.W. Lee Samsung Advanced Institute ofTechnology, Kyungki-do, Korea

6.2: Electrostatic Analysis of Field Emitter Arrays withFocusing Electrode Using Boundary Element Method

71C. Xie, R. Lucero, L Dworsky Motorola, Inc. AZ

6.3: Low-Voltage Cathodoluminescent Properties of Blue-Emitting SrGa2S4:Ce Thin Films 75Y. Nakanishi, N. Uekura, H. Kominami, T. Aoki,Y. Hatanaka Shizuoka University, Hamamatsu, Japan

7: Phosphors

7.1: Mn-Activated Ga2O3-GeO2 System MulticomponentOxides as Thin-Film Electroluminescent Phosphors... 81T. Minami, Y. Kubota, T. Miyata Kanazawa Institute ofTechnology, Ishikawa, Japan

7.2: Synthesis of Y3Al5O12:Tb Phosphor by Sol-Gel Method85

C.-H. Park, S.-J. Park, B.-Y. Yu, H.-S. Bae, I.-E. Kwon,C.-H. Kim, C.-H. Pyun Korea Institute of Science andTechnology, Seoul, KoreaHong G.-Y. Changchun Institute of Applied Chemistry,Changchun, China

7.3: Preparation of Multi-Component Spherical Phosphorsby Aerosol Pyrolysis Method 89S.H. Cho, S.H. Kwon, J.S. YooChung-Ang University, Seoul, KoreaJ.D. Lee Seoul National University, Seoul, Korea

7.4: (Late News): Blue-Emitting Pb-Doped Calcuim SulfideElectroluminescent Devices Grown Using TetraethylLead as Pb-Precursor 93S.J. Yun, Y.S. Kim, S.H. Ko Park, K.I. ChoETRI, Taejon, Korea

8: Advanced a-Si AMLCDs

8.1: Invited Paper. Top-Gate a-Si:H TFT-LCD Technology:Past, Present and Future 99J. Kanicki, S. Martin The University of Michigan, MlY. Ugai Hosiden and Philips Display Corp., Hyogo,Japan

8.2: Optimization of Back-Channel Etch Type a-Si TFT's105

Y.H. Byun, Y. LuOptical Imaging Systems, Inc., Northville, Ml

8.3: The Role of Amorphous Si Buffer Layer inPolycrystalline SiGe Thin Film Transistors with AI2O3

Gate Insulators 109Z Jin, M. Wong, H.S. Kwok Hong Kong University ofScience and Technology, Clear Water Bay, Hong Kong

8.4: New AMLCD Structure-Color Filter Passivated a-Si TFT113

J.Z.Z. Thong, W. den Boer, Y.H. Byun, S.V. ThomsenOptical Imaging Systems, Inc., Northville, Ml

9: Reflective LCDs

9.1: Invited Paper. Development of Highly Reflective ColorTFT-LCDs 119Y. Ishii, M. Hijikigawa Sharp Corp., Japan

9.2: Electro-Optics of Reflective Bistable Chiral NematicLiquid Crystal Displays: Temperature, Cellgap andPolyimide Thickness Dependence 123L. J. M. Schlagen, H.J. Comelissen,F.A.M.A. Paulissen Philips Research Laboratories,

Eindhoven, The Netherlands9.3: Gray Scale Drive Schemes for Bistable Cholesteric

Reflective Displays 127J. Gandhi, D.K. Yang Kent State University, Kent, OHS.-Y. Huang, N. Miller Kent Displays, Inc., Kent, OH

9.4: An 8.4-in. SVGA Color Reflective TFT-LCD Using CMYColorfilters and Low-Temperature Poly-Si Technology

131Y. Hisatake, T. Nakanura, A. Oono, Y. Hanazav/a,M. Ishikawa, Y. Higuchi, N. HaradaToshiba Corporation, Saitama, Japan

10: Field Emission Displays

10.1: A New Data Driver Circuit for Field Emission Display137

Y.-S. Na, O.-K. KwonHanyang University, Seoul, KoreaC.-H. HyunOrion Electric Co., Ltd., Kyungbuk, KoreaJ.-W. ChoiDaewoo Electronics Co., Ltd., Seoul, Korea

10.2: Characterization of Si Field Emitters Based on SingleCrystal, Polycrystalline and Amorphous SiliconSubstrate 142J.D. Lee, B.C. Shim, H.S. Uh, B.-G. ParkSeoul National University, Seoul, Korea

10.3: Glass-to-Glass Wafer Anodic Bonding and ItsApplication to FEA/FED Micro-Packaging 145B.K. Ju, J.W. Jeong, D.J. Lee, M.H. Oh Korea Instituteof Science and Technology, Seoul, KoreaS.J. Jeong, N.Y. LeeOrion Electric Co., Ltd., Kyungki, KoreaY.W. Ko, C.H. LeeHyundai Electronics Industries Co., Ltd., KoreaJ.I. Han KETI, KoreaK.I. Cho ETRI, KoreaD.J. Choi Yonsei University, Korea

11: 3D / Application / System

11.1: Invited Paper. 15 inch XGA Non-Glasses 3-D Displayand A Medical Application 151K. Mashitani, M. Inoue, R. Amano, S. Yantashita,G. Hamagishi Sanyo Electric Co., Ltd., Osaka, Japan

11.2: Full-Color, Multiviewer, and Non-Goggle HolographicAutostereoscopic 3-D Display System 157D.H. Kim, A. Kostrzewski, T. Aye, G. SavantPhysical Optics Corporation, Torrance, CA

11.3: Influence of Color Saturation on Picture Quality 163T. Suzuki, Y. Shimodaira, G. Ohashi, andH. IkedaShizuoka University, Hamamatsu, Japan

11.4: Multiple Cooperative Displays which Merge Virtual andReal Space 167S. Shiwa, A. Kitagawa, M. Kobayashl, S. IchinoseNTT Human Interface Laboratories, Kanagawa, Japan

12: Advanced AMLCD

12.1: Invited Paper. Reflective FLCDs and PECVD -Generated a-Si-TFTs with Plastic Substrates 173E. Lueder, M. Muecke, S. PolachUniversity of Stuttgart, Stuttgart, Germany

12.2: New Approaches for Large-Size Plastic LCDApplications 179J.H. You, J.W. Park, J.S. Lee

Samsung Display Devices Co., Ltd., Kyungki-Do, Korea12.3: A 5.8 inch TFT-LCD for Car Navigation System 183

B.S. Bae, J.H. Lee, J. H. Huh, Y.K. Lee, S.Y. Joo,J.H. SoukSamsung Electronics Co., Ltd., Kyungki-Do, Korea

12.4: (Late News): High-Information-Content Color 16.3 inch-Desktop-AMLCD with 15.7 Million a-Si:H TFTs 187K. Schleupen, P. Alt, P. Andry, S. Asaad, E. Colgan,P. Fryer, E. Galllgan, W. Graha, P. Greier, R. Horton,H. mil, R. John, R. Kaufman, A. Lanzetta, K. Latzko,S. Llbertini, F. Llbsch, A. Lien, M. Mastro, S. Millman,R. Nunes, R. Nywenlng, R. Polastre, J. Rltsko,M. Rothwell, K. Warren, J. Wilson, R. Wisnleff,S. Wright, C. Yue IBM T.J. Watson Research Center,Yorktown Heights, NYM. Kodate, S. TakasuglIBM Japan Ltd., Kanagawa-ken, JapanH. Kinoshlta, H. KltaharaIBM Japan Ltd., Shiga-ken, Japan

13: LCD Alignment / Materials

13.1: Invited Paper. Photo-Alignment and Patterning of Planarand Homeotropic Liquid Crystal Display Configurations

193H. Seiberle, M. SchadtROLIC Research Ltd., Allschwil, Switzeriand

13.2: Photo-Dimerized Alignemnt Layer and Pretilt Variationof Liquid Crystals 199K.A. Gruneberg, D.K. Shenoy, J. Naciri, M.S. Chen,R. ShashldharNaval Research Laboratory, Washington, D.C.

13.3: Spacer Positioning for Flat Panel Display by Ink JetPrinting 203K. Tamai, N. tshlmaru, Y. Hlral, T. KamlhoriAsahi Glass Co., Ltd., Yokohama, Japan

13.4: Viewing Angle Improving Film for LCD 207A. ShlmlzuSumitomo Chemical Co., Ltd., Osaka, Japan

14: Organic Luminescent Materials

14.1: Ink-Jet Printed Organic Electroluminescent Devices213

K. Yoshlmorl. S. Naka, M. Shlbata, H. Okada,H. Onnagawa Toyama University, Toyama, Japan

14.2: High Resolution Light Emitting Polymer Display Drivenby Low Temperature Polysilicon Thin Film Transistorwith Integrated Driver 217T. Shimoda, S. Miyashita, M. Kimura, I. Yadasaka,S. Kanbe, H. KobayashlSEIKO EPSON Corporation, Nagano, JapanH. Ohshlma, T. OzawaL Project, SEIKO EPSON Corp., Nagano, JapanR.H. Friend, J.H. Burroughes, C.R. TownsCambridge Display Technology Ltd., Cambridge, UK

14.3: Quantum Efficiency Improvement of Blue-EmissivePolymer LEDs by Adding Organic Salts 221D.Y. Kim, H.N. Cho, C.Y. KimKorea Institute of Science Technology, Seoul, KoreaY.S. Kim, H.W. LeeHanyang University, Seoul, Korea

14.4: Low Temperature Polysilicon TFT Active Matrix OLEDDisplay on Coming 1737 Glass 225L.K. Lam, D.G. Ast Cornell University, Ithaca, NYP. Fleming Eastman Kodak Co., Rochester, NY

15: Display Measurement

15.1: Applying ANSI Projector Standards for the Government231

L. Shapiro, M. Grote National Information DisplayLaboratory (NIDL), Princeton, NJ

15.2: Scanning Display Resolution and Contrast 237H. Urey, J.R. Lewis Microvision Inc., Seattle, WA

15.3: Influence of Ion transport in SSFLC Addressing andImage Sticking 241H. Zhang, K. D'Have, B. Verweire, H. PauwelsUniversity of Gent, Gent, BelgiumV. Ferrara, P. Maltese, F. CampoliLa Sapienza University, Roma, Italy

15.4: Simultaneous Measurement of Pretilt Angle and CellGap of LC Cells by Using an Improved Crystal RotationMethod 245B.G. Rho Asadal Display Co., Seoul, KoreaJ.S. Kim Chonbuk National University, Chonbuk, KoreaJ.K. Kim Agency of Defence Development, Taejon,Korea

15.5: (Late News): Optical Modelling of Liquid Crystal DevicesUsing the Transmission Line Matrix (TLM) Mothod... 249G. Lester University of Exeter, Exeter, UK

SPECIAL SESSION

S1: FPD Market Analysis in Korea 255M.Y. Huh, C. Park, C. KimSung Kyun Kwan University, Seoul Korea

S2: Invited Paper. Market & Technology Trends in theGlobal Flat Panel Display Market 259J.A. Castellano Stanford Resources, Inc., CA

S3: Invited Paper. Projection Display Market andTechnology Trends: Looking Towards 2010 265F.J. Kahn Kahn International Publishing LLC, CA

16: AMLCD Driving

ISA: Invited Paper. Recent Advances in Plasma-AddressedLiquid Crystal (PALC) Technology 273T.S. Buzak Technical Visions, Inc., Beaverton, OR

16.2: A Universal Controller for a-Si TFT LCD of SXGA Class277

B.K. Park, C.H. Choi, J.S. Park, M.R. ChoiHanyang University, Kyungki-Do, KoreaB.H. Kwon Yuhan Junior College, Kyungki-Do, Korea

16.3: The Temperature Compensation Circuit in LCD Driverfor ECB color LCD 281W. Wong, G. Lien Motorola Semiconductor ProductSector, N.T., Hong Kong

16.4: A Low-Power Poly-Si TFT-LCD with Integrated 8-bitDigital Data Drivers 285S.-W. Lee, H.-J. Chung, C.-H. Lee, C.-H. HanKorea Advanced Institute of Science and Technology,Taejon, Korea

17: Bistable LCDs I

MA: Invited Paper. Long Time Scale Relaxation of theHometropic to Planar Transition of Short PitchCholesteric Materials 291P. Watson, V. Sergan, J. Anderson, J. Ruth, P.J. BosKent State University, Kent, OH

17.2: An Advanced Driving Method for Bistable Twisted

Nematic (BTN) LCD 295T. Tanaka, T. Obikawa, Y. Sato, H. Nomura, S. linoSEIKO EPSON Corp., Nagano, Japan

17.3: Optimization of Drive Scheme for Matrix Addressing of aBistable Twisted Nematic LCD 299G.D. Lee, K.H. Park, K.C. Chang, T.H. Yoon, J.C. KimPusan National University, Pusan, KoreaE.S. LeeSamsung Display Devices Co., Ltd., Kyungki-Do, Korea

17 A: A New BTN LCD with High Contrast Ratio and LargeCell Gap 303ZL:Xie, H.J. Gao, B.Z. Chang, S.Y. XuTsinghua University, Beijing, ChinaH.S. Kwok Hong Kong University of Science andtechnology, Kowloon, Hong Kong

18: Plasma Displays Technology

18.1: Hollow Cathode Microbridge Plasma Display Panel„ ...309

KC. Choi, D.Y. Ok, B. Hallock, R.A.Johnson, G. DickHyundai Plasma Display Division, Hawthorne, NY

18.2: Fabrication Process of Priming Rib for 42-inch HDTVPDP 313T. Kawai, T. Katoh, T. Takei, S. Ueda, T. Kuriyama,M. Seki, J. Koike NHK Science and TechnicalResearch Laboratories, Tokyo, JapanH. Kono Matsushita Research Institute, Tokyo, JapanK. Abe, T. Atsumi, K. Takahashi, Y. SasaokaMatsushita Electronics Corporation, Osaka, Japan

18.3: Preparation of Cr/Cu/Cr Metal Electrodes for ac PlasmaDisplay Panel by dc Magnetron Sputtering 319K.W. Lee, D.H. Nam, J. Cho, R. Kim, C. Son,J.W. Park Hanyang University, Seoul, Korea

18.4: (Late News): Influences of Sustain Electrode Gap onElectrical Characteristics in AC Plasma Display Panel

323E.H. Choi, T.S. Cho, D.S. Cho, J.K. Kim, J.J. Ko,J.C. Ahm, J.Y. Urn, M.C. Choi, Y.Jung, T.Y. Kim,Y.G. Kim, G.S. Cho Kwangwoon University, Seoul,Korea

19: Display System

19.1: Invited Paper. Actuated Mirror Array - A New Chip-Based Display Device for the Large Screen Display

329S.-G. Kim, K.-H. Hwang, J. Hwang, M.-K. Koo,G.-W. Lee Daewoo Electronics Co., Ltd., Seoul, Korea

19.2: The Residual Stress and Stress Gradient of AluminumThin Film for Micro Mirror Array for Display 335Y.-J. Kim, J.-W. Shin, Y.-K. KimSeoul National University, Seoul, Korea

19.3: Low Cost, High Performance Flat Panels based onSolid State Display (SSD) Technology 339D. Carkner The Westaim Corporation, Toronto, Canada

19.4: A Single-Chip NTSC and VGA Monitor 343P. Alvelda, M. Bolotski, D. Huffman, H. Shi,J. Ammer, C. Vieri, N. LewisThe Micro Display Corporation, CA

120: LCD Manufacturing /TFTs

20.1: Invited Paper. Current Issues in Manufacturing 17 inchTFT-LCD Monitors 349

J.H. SoukSamsung Electronics Co., Ltd., Kyungki-Do, Korea

20.2: Anomalous Back-Channel TFT Characteristics Due tothe Amorphous Silicon Surface Treatment 355T. Tsujimura, T. MiyamotoIBM Japan Ltd., Kanagawa-ken, JapanT. Tokuda Display Technologies Inc., Shiga, JapanF. Libsch IBM Corp., NY

20.3: Development of Low Temperature Poly-Silicon TFT withExcellent Saturation Characteristics 361S. Zhang, Anish Kumar K.P., Johnny K.O. SinThe Hong Kong University of Science and Technology,Clear Water Bay, Hong Kong

20.4: Mo-Si Alloy in a-Si 365S. Xiong, Z. Meng, Y. Zhao, Z. Zhou, Y. DaiNankai University, Tianjin, China

21: Wide Viewing Angle LCD

21.1: Invited Paper. High-Transmittance, Wide-Viewing-AngleNematic Liquid Crystal Display Controlled by Fringe-Field Switching 371S.H. Lee, S.L. Lee, H.Y. KimHyundai Electronics Co., Ltd., Kyungki-Do, Korea

21.2: Wide Viewing Angle TFT-LCD Based in Ridge andFringe-Field Multi-Domain Homeotropic Structure 375A. Lien, R. Nunes, S.L. Wright R.A. John,E. Galligan, J. WilsonIBM T. J. Watson Research Center, NYC. Cai Potytechnic University, NY

21.3: Mechanism and Electrooptic Properties of Multi-DomainVertically Aligned Mode 379V.A. Konovalov, A.A. Muravski, C.N. Timofeev,S.Ye. YakovenkoInstitute of Applied Physics Problems, Minsk, Belarus

21.4: (Late News): Domain Divided Vertical Alignment Modewith Optimized Fringe Field Effect 383K.H. Kim, K. Lee, S.B. Park, J.K. Song, S. Kim, J.H.Souk Samsung Electronics Co., Ltd., Kyungki-do, Korea

22:PDP/MgO

22.1: MgO Protective Layer for AC-PDPs by Spray Pyrolysis389

A.R. Balkenende, R.R.M. Tijburg Philips ResearchLaboratories, Eindhoven, The Netheriands

22.2: High Rate MgO Sputter Process for PDP Applications393

J. Stollenwerk, J. Trube, C. DaubeBalzers Process Systems, Alzenau, GermanyA.R. Balkenende Philips Natuurkundig Laboratorium,Eindhoven, The Netheriands

22.3: A Study of MgO and Alkali Doped MgO Pastes withHigh Transmittance for the Reflective Type AC ColorPlasma Display 397S.I. Ahn, W.T. Park, J.M. Kim Samsung AdvancedInstitute of Technology, Kyungki-Do, KoreaK. Yoshida, M. Sawa, H. UchiikeHiroshima University, Hiroshima, Japan

22.4: Ion-Induced Secondary Electron EmissionCharacteristics of MgO Thin Films 401K.S. Moon, J.W. Cho, J. Lee, K.-W. WhangSeoul National University, Seoul, Korea

23: Projection / Miniature Display

23.1: Invited Paper. Reflective Active Matrix LCD forProjection Displays: D-ILA™ 407Y. OchiVictor Company of Japan, Ltd., Kanagawa, Japan

23.2: Color Sequential Miniature Silicon Display UsingReflective Twisted Nematic Mode 411H.C. Huang, P.W. Cheng, J. Chen, H.S. KwokThe Hong Kong University of Science and Technology,Clear Water Bar, Hong Kong

23.3: Light Shielding with Liquid Crystal on Silicon Displays415

C.De Backere, M. Vermandel, A.Van CalsterUniversity of Gent, Gent, Belgium

23.4: Reflective CMOS Liquid Crystal Display DesignConsiderations 419Y. Jl, M.E. StefanovS-Vision Inc., OHW.R. Folks, P.J. Bos Uquid Crystal Institute, OH

POSTER SESSION

ACTIVE-MATRIX LCDs

P-1: A New Digital Driving Scheme for Poly-Si TFT-LCDPanels 425J. Jeon, O.K. Kwon, I. LeeHanyang University, Seoul, Korea

P-2: A Completely Self-Aligned a-Si:H TFT with a SiOF Ion-Stopper 429K.S. Cho, K.W. Kim, J. JangKyungHee University, Seoul, Korea

P-3: Analysis and Reduction of Kink Effect in MILC-TFTs433

G.A. Bhat M. Wong, Z Jin, H.S. KwokThe Hong Kong University of Science and Technology,Clear Water Bay, Hong Kong

P-4: A New Poly-Si Thin Film Transistor with a SelectivelyCrystallized Channel in Grid-Shape 437J.-H. Jeon, C.-M. Park, C.-H. Kim, K.-C. Park,M.-C. Lee, M.-K. HanSeoul National University, Seoul, Korea

P-5: Hydrogen Dilution Effect on the Properties of CoplanarAmorphous Silicon Thin Film Transistors 443S.K. Kim, Y.J. Choi, K.S. Cho, J. JangKyung Hee University, Seoul, Korea

P-6: New Staggered Poly-Si TFT's with a Self-Aligned OffsetStructure 447J.-l. Han, G.-Y. Yang, C.-H. Han Korea AdvancedInstitute of Science and Technology, Taejon, Korea

P-7: TFT Throughput and Performance Improvement viaDoubling of the RF Frequency in the KAI20 PECVDSystem 451P. Grousset, H.Pham, E. Turiot, J. SchmittBalzers Process Systems, Palaiseau, FranceF. Leblanc, S. RhynerBalzers Process Systems, Balzers, LiechtensteinJ.-B. Ch6vrier Balzers Process Systems, Tokyo, Japan

PS: Characteristics of Counter-Doping Using Non-MassSeparated Ion Doping System with PH3 and B2H6 for theExcimer Laser Annealed Poly-Si Film 455J.Y. Yang, D.W. Choi, M.S. Yang, D.G. Moon,Y.S. Park, W.G. Park, H.S. SohLG Electronics, Inc., Kyungki-Do, KoreaS.H. Kim Institute of Technology LG Inc. Co., Korea

APPLICATIONS

P-9: A Study on the HMD using a SLA 463W.S. An, H.C. Moon, I.H. Kim

Korea Electronics Technology Institute, Kyungki-Do,Korea

P-10:2.3 inch Flat Fluorescent Lamp with Full AreaElectrodes and "Hg Gas Free" 467M.-G. Kwak, J.-I. Han, S.-C. Lim Korea ElectronicsTechnology Institute, Kyungki-Do, Korea

P-11: Head Mounted Display with a Single LCD Panel 469S.G. Lee, J.H. Song, J.H. Lee, T.S. Park, M.H. ParkLG Electronics Inc., Seoul, Korea

APPLIED VISION/HUMAN FACTORSI3D DISPLAYS

P-12: Stereo Matching Algorithm Based on Multi-FeatureMerging: MFM 477B.-K. Koo Systems Engineering Research Institute,Taejon, KoreaS.-I. ChienKyungpook National University, Taegu, Korea

P-13: Design of Stereoscopic Imaging System and ItsApplication in 3D Endoscopic Surgery 481C.G. Song Samsung Advanced Institute of Technology,Kyungki-Do., KoreaS.S. Kim Samsung Electronics Co., Ltd., KoreaJ.C. Kim Korea Academy of Industrial Technology,Kyungki-Do, Korea

P-14: Recovery of a Large Shaped Object from the ImageSequence 487Y.K. Chung, B.-K. Koo, Y.-B. Choi Electronics andTelecommunications Research Institute, Taejon, KoreaJ.H. Han POSTECH, Pohang, Korea

P-15: Realization of an Organic Image : Synthetic Approach491

Daniel D.-H. Kwon, Y. Kim, K. KimETRI, Taejon, Korea

P-16:A New Conductive AR Coating for CRT by Modified Sol-Gel Process 497J.-H. Lee, Y.-H. Cho, D.-S. ZangSamsung Display Devices Co., Ltd., Kyungki-Do, Korea

P-17:A Computer-aided Design(CAD) Method for High-Performance Electron Guns 501W.F. Qin, Y.Y. WenIRICO Group Corporation, Shaan Xi, China

P-18:Calculation of Field Parameters for Elliptical Cross-Section Coil with Non-Meridian Current Wires 506S. Ding, C. Shi, Y. Jiao, J. ChenNankai University, Tianjin, China

P-19:74cm 16:9 Optimization Design of Deflection System forColor Digital TV 509Y.S. Shi, J. ZhaoTechnical Center ofCai Hong Group Corp., ChinaH.T. Zhang, X.M. Feng, X.P. LuJiaotong University, China

P-20:YAG to Alumina Ceramics Sealing under Vacuum.... 513C. Jianbo, Q. Kangcheng, L. Zulun UEST, Dept. ofOpto-Electron Technology, Sichuan, China

DISPLA Y MANUFA CTURING

P-21: Fabrication of Phosphor Screen by ElectrophoreticDeposition Using Ionic Polymer for Field EmissionDisplay 519Y.S. Han, B.C. Kim, J.B. Paik, N.Y. LeeOrion Electric Co., Ltd., Gumi, KoreaL.S. Park Kyungpook National University, Taegu, Korea

P-22: Photosensitive Phosphor Composition andPhotolithographic Process for PDP Phosphor Screening

523H.-S. Oh, L.-S. ParkKyungpook National University, Taegu, Korea

P-23: Understanding of Unwanted Deposition on the UnbiasedITOs in Electrophoresis 527S.-H. Shin, K.-J. Lee, D.Y. Jeon Korea AdvancedInstitute of Science and Technology, Taejon, KoreaY.W. Jin, J.M. Kim Samsung Advanced Institute ofTechnology, Kyungki-Do, Korea

P-24: Development of High Transmittance Color Filters forReflective LCDs 533J.H. Kwon, S.T. Lee, LG. Kim, M.J. Kim, Y.S. Choi,T.M. Kang, KH. Choi, E.S. LeeSamsung Display Devices Co., Ltd., Kyungki-Do, Korea

P-25: Breakage of LCD Glass Substrate 539T. Ono Corning K.K., Shizuoka, Japan

P-26: Effect of Back-Channel Etching on the Performance ofInverted Staggered a-Si:H Thin-Film Transistors 543C. Qiu, Y.H. Byun, T. Gu, Y. LuOptical Imaging Systems, Inc., Ml

P-27:BIGMAG: Sputtering Cathode for Large Area Substrates547

J. Driessen, V. Cassagne, A. DeschampsBPS, Palaiseau, FranceR. Kopfli, P. Grunenfelder, W. HaagBPS, Balzers, Liechtenstein

DISPLAY MEASUREMENTS

P-28: Measurement and Analysis of Nonlinear Gamma 553T. /no, H. Shirai, M. Miyahara Japan AdvancedInstitute of Science and Technology, Ishikawa, Japan

P-29:Analysis on the Relation between Luminance and ColorShift in CRT Display 557H.S. Kim, S.O. ParkDae Jin University, Kyungki-Do, Korea

P-30:Three Dimensional Diagrammatic Representation ofVacuum Display Exited by Low Energy Electrons 561A.V. Strel'tsov, S.A. Bukesov, A.O. Dmitrienko,S.L ShmakovSaratov State University, Saratov, Russia

P-31:Computer Optimization of Liquid Crystal Displays usingMouse-LCD System 565V.G. Chigrinov, Y.B. PodyachevShubnikov Institute of Crystallography, Moscow, RussiaG.V. Simonenko, D.A. YakovlevSaratov State University, Saratov, Russia

P-32:Optical Measurement of Leakage Current in LCD 569/. Hwang, K.S. Kim, S.Y. Yeo, S.Y. Lee, S.C. KangSamsung Electronics Co., Ltd., Kyungki-Do, Korea

P-33: Diffraction Analysis of Holographic Reflector andDiffuserin Liquid Crystal Display 573Y. Jeong, N. Park, H.-S. Lee, B. LeeSeoul National University, Seoul, Korea

PLASMA DISPLAY PANELS

P-34: Fabrication of Full-Color Phosphor Pattern byPhotolithographic Process and Black Matrix Pattern byLifl-Off Process for FED 579B.C. Kim, Y.S. Han, J.B. Park, N.Y. LeeOrion Electric Co., Ltd., Gumi, KoreaLS. ParkKyungpook National University, Taegu, Korea

P-35: Luminescent Characteristics and Morphology of(Y.GdJBOj^u3* Phosphors Prepared by Sol-GelPrecursor 583Y.-Y. Shin, Y.KimDankook University, Choongnam, Korea

P-36:An Analytic Solution of Laplace's Equation and theBreakdown Criteria in the Coplanar Plasma Displays

587G. Cho, Y.-G. Kim, Y.-S. Kim, T.-S. Cho, J.-J. Ko,E.-H. Choi Kwangwoon University, Seoul, Korea

P-37:New Driving Method for Improvement of Picture Qualityin 40-inch AC PDP 591G.S. Lim, K.C. Yoo, S.K. See, E.H. Yoo, S.H. Moon,H.Y. Kim, J.P. Choi LG Electronics Inc., Seoul, Korea

P-38: Study on the Recovery Circuit of Capacitive Energy inAC PDP 595C.-H. Park Pusan National University, Pusan, Korea

P-39:A Study on the Dielectric Strength and Transparency ofDielectric Layer in AC PDP 601C.-H. Park, S.-H. Lee, G.-S. Kim, J.-S. ChoPusan National University, Pusan, Korea

P-40: Low-Voltage Characteristics of MgO-SrO-CaO SystemFilms for AC PDPs by E-Beam Evaporation....; 605J. Cho, R. Kim, K. Lee, C. Son, J.-W. ParkHanyang University, Seoul, KoreaH.-J. Kim Korea Military Academy, Seoul, Korea

P-41:AC-PDP Cell Simulation using Fluid, Hybrid, and KineticMethods 609Y.K. Shin, C.H. Shon, H.S. Lee, W. Kim, J.K. LeePohang University of Science and Technology, Pohang,Korea

P-42:Wall Charge Measurement of an AC Plasma DisplayPanel (PDP) Cell 613D.S. Kim, S.S. Lee, S. LimDankook University, Choongnam, Seoul

P-43: Formation and Characterization of the MgO ProtectingLayer Deposited by Plasma-Enhanced Metal-OrganicChemical Vapor Deposition 617M.S. Kang, KM. Lee, J.C. Byun, C.K. ChoiCheju National University, Cheju, Korea

P-44: Optical Studies of E-beam Evaporated MgO Films andTheir Modification by Low Energy Ion Bombardment

623S. Lee, S. Choi, Y.-D. Park, S.-G. OhAjou University, Kyungki-Do, Korea

P-45:Optical Characteristics of Phosphor Screen for PlasmaDisplay Application 627B.S. Jeon, K.Y. Hong, J.S. Yoo Chung-Ang UniversityJ.K Kim, K.-W. WhangSeoul National University, Seoul, Korea

P-46: Barrier Rib Formation Via Laser Scribing of Dry Films631

W.-Y. Kim, J.-S. Ahn, H.-J. Jeon, Y.-S. KimHongik University, Seoul, KoreaS.-S. Kim Hongik University, Choongnam, Korea

P-47:Studies for the Multiple Protecting Layers in AC PDPDisplays 635W.T. Lee, J.W. Lee, W.T. Park, H.Y. Jang, S.J. Lee,H.G. Kwon, SJ. Lim, S.Y. Choi, S.I. Ahn, J.M. KimSamsung Advanced Institute of Technology, Kyungki-Do, Korea

P-97:Outgassing Measurements from MgO Layer:Preliminary Results 639S. Tominetti, A. RenzoSAES Getters S.p.A., Lainate, Italy

ELECTROLUMINESCENT DISPLA YS

P-48: Luminescence Properties of Y2O3:Eu and SrTiO3:Pr,AIRed Phosphors 645H. Ryu, J.-K. Park, H.-D. Park Korea Research Instituteof Chemical Technology, Taejon, Korea

P-49:The Effect of Field-Drift in Organic Light EmittingDevices 649

S. Xlong, E. Liu, Z. Wang, J. Zhang, X. Feng, Y. ZhaoNankai University, Tianjin, ChinaJ.K.O. Sin The Hong Kong Univ., Hong Kong, China

P-50: Fully Self-Aligned Organic Electroluminescent Deviceswith Dual Side-Wall Structures 653T. Terashita, I. Yamamoto, S. Naka, H. Okada,H. Onnagawa Toyama University, Toyama, Japan

P-51: Effects of Aluminum Fluoride on Formation ofBaMgAI,0O,7:Eu 657C.-H. Park, B.-Y. Yu, H.-S. Bae, S.-J. Park, I.-E. Kwon,C.-H. Kim, C.-H. Pyun, H.G. Yan KIST, Seoul, Korea

P-52:The Optical and Electrical Properties of EuropiumComplex Thin Film Prepared by Vacuum EvaporationMethod 661M.-H. Lee, S.-W. Pyo, H.-S. Lee, Y.-K. Kim, J.S. Choi,J.-S. Kim Hongik University, Seoul, Korea

P-53:A New Blue-Light-Emitting Polyimide 667M. Ree, S.M. Pyo, S.I. Kim, TJ. Shin, H.K. ParkPohang University of Science and Technology, Pohang,KoreaK.H. ParkChungnam National University, Taejon, Korea

P-54: Effect of Sulfur-Cracking on the Characteristics ofSrS:Ce,CI Thin Film EL Devices 671K.R. Park, W.-S. Cho, H. YangChung-Ang University, Seoul, KoreaS.-H. Ju Hyundai Electronics, Kyungki-Do, Korea

FIELD EMISSION DISPLAYS

P-55:The Effect of Al Film Microstructure with VariableDeposition Conditions on the Reflectance in CDT

677S.-J. Lee, E.-S. HwangSamsung Display Devices Co., Ltd., Kyungki-Do, KoreaC.-M. Sung, T. DolukhanyanUniversity of Massachusetts, MA

P-56:A Study on the Diamond Cold Cathode in FED 681W.S. Lee, J. Yu, J.G. Kim Korea Advanced Institute ofScience and Technology, Taejon, Korea

P-57:Y2SiO5:Tb Phosphor Particles Directly Prepared bySpray Pyrolysis Method 685Y.C. Kang, S.B. Park Korea Advanced Institute ofscience and Technology, Taejon, KoreaI.W. Lenggoro, K. OkuyamaHiroshima University, Hiroshima, Japan

P-58:Activation Effect of the Glass Packaged FED with Getter689

K.S. Ryu, T.H. Cho, S.J. KwonKyungwon University, Kyungki-Do, KoreaJ.D. Lee Seoul National University, Seoul, Korea

P-59:New Spacer Process Using Electrostatic Bonding forFED 693M. Kim, S. ParkKyungpook National University, Taegu, KoreaK. Kim, S. Jung, N. LeeOrion Electric Co., Ltd., Kyungki-Do, Korea

P-60: Improvement of Field Emission Properties by Metal (Nb,Ti) Coated Silicon Field Emission Arrays 699J.S. Park, M.S. Kang, B.K. Ju, M.H. OhKIST, Seoul, KoreaJ.H. Yoon, Y.J. Choi, K.W. Kim, S.H. Kim, S.H. Lim,H. Kim, J. JangKyung Hee University, Seoul, KoreaY.J. Yoon, EJ. Chi, H.K. BalkYonsei University, Seoul, Korea

P-61:lmplementation of Silicon-Based Field Emission DisplayUsing Scaled-Down Metal Field Emitter 703J.D. Lee, C.G. Lee, C.W. Oh, I.H. Kim, J.H. Nam,H.S. Uh Seoul National University, Seoul, Korea

S.J. Kwon Kyungwon University, Kyungki-Do, KoreaJ.S. Yoo Chung-Ang University, Seoul, Korea

P-62:Simulation of Non Symmetrical Geometry Effects onElectrical Characteristics of Micrometer-Size FieldEmitters 707N. Kim, Y. LeeChungbuk National University, Chungbuk, KoreaA. HarizUniversity of South Australia, S.A., Australia

P-63: Electron Field Emission from the Surface ofFerroelectric PbTiO3 Thin Films 711D.K. Lee, S.G. Lee, S.H. SohnKyungpook National University, Taegu, Korea

LARGE AREA DISPLAYS'

P-64:Electron-Beam Pumped Semiconductor Lasers forProjection to Large Screens 717A. Sadchikhin, O. Bogdankevich, S. SozinovAR Technology, Moscow, Russia

P-65: Fabrication of Vertical Spring-Typed Micro Mirror UsingShielding Screen Structure 721T.-S.Lim,Y.-K.KimSeoul National University, Seoul, Korea

P-66:High Resolution Nematic Pixcel Design 725M.I. Gritsenko, S.I. KucheevChernigov University, Chernigov, Ukraine

LIQUID CRYSTAL TECHNOLOGY

P-67: General Mechanism of Determination of Nematic LCPretilt Angles 731S.-H. Paek, A. Lien, C.J. DumingIBM T.J. Watson Research Center, NYK.-W. Lee Columbia University, NY

P-68: Study of the Normal-Mode Polymer-StabilizedCholesteric Liquid Crystal Display (N-PSCT LCD) ....735Y. Cai, Q. Wang, X. Huang, Y. UuChinese Academy of Sciences, Changchun, ChinaY. Tian Jilin University, Changchun, China

P-69: Structural Transitions of UV Irradiated Polymer-Dispersed Cholesteric Liquid Crystals 739V.L. Aristov R&D Institute Volga, Oktyabrya, RussiaM.V. Mitrokhin, V.P. SevostyanovSaratov State University, Astrakhanskaya, Russia

P-70: Driving Characteristics of a Bistable TN LCD to the d/pVariation 743KH. Kang, B.S. Song, S.B. Lee, I.N. Kim, S.H. Kim,E.-S. LeeSamsung Display Devices Co., Ltd., Kyungki-Do, Korea

P-71: Simple Driving Methods for Cholesteric Reflective LCDs749

V. SorokinInstitute of Semiconductor Physics, Kyiv, Ukraine

P-72: Threshold Voltage Stability of Liquid Crystal SingleCompounds with 1,3,2-Dioxaborinane Group 753M. Lim, D.J. Jeong, S.H. Kim, Y.J. Lee, K.H. Uh,V. Bezborodov, V. Lapanik, H.G. YangSamsung Display Devices Co., Ltd., Kyungki-Do, Korea

P-73: Study on the Relation Between the Surface AnchoringEnergy and UV Irradiation Energy in Photoalignment

757M. Lee, M. Nam, Y.J. Choi, Y.S. Choi, S. KwonLG Electronic Inc., Kyungki-Do, Korea

P-74:The Bistable Twisted Nematic Mode with One Polarizerfor Reflective Liquid Crystal Displays .763Y.J.KimThe Pennsylvania State Univ., University Park, PAC.-J. Yu, S.-D. Lee

Seoul National University, Seoul, KoreaP-75:The Driving Scheme Dependence of the Electro-Optic

Characteristics of a Bistable Twisted Nematic Mode767

Y.J. KimThe Pennsylvania State Univ., University Park, PAJ.-H. Lee, S.D. LeeSeoul National University, Seoul, Korea

P-76:Optically Controlled Alignment of a Nematic LiquidCrystal on a Photoreactive Side-Chain Copolymer Layer

771J.-H. Lee, S.-D. LeeSeoul National University, Seoul, KoreaD.H. Choi, S.H. KangKyung Hee University, Kyungki-Do, Korea

P-77: Perspective Chiral Organic Compounds for CholestericLiquid Crystal Display Applications 777A.G. Kozachenko, V. SorokinInstitute of Semiconductor Physics, Kyiv, UkraineL.A. Kutulya, V. Vashchenko, G. SemenkovaInstitute for Single Crystals, Kharkiv, Ukraine

P-78:Wide Viewing Angle 4-Domain HTN(Hybrid TwistedNematic) LCD by using Photo-Alignment Method toApply TFT LCD 781J.S. Lee, K.Y. Han, B.H. ChaeSamsung Display Devices Co., Ltd., Kyungki-Do, KoreaG.B. Park, W.S. Park Inha University, Inchon, Korea

P-79: Thermal Stability and Anchoring Characteristics of LCDusing Photo-Alignment Layer with Newly SynthesizedPhoto-Polymer 785B.H. Chae, K.Y. Han, J.S. Lee, H.G. YangSamsung Display Devices Co., Ltd., Kyungki-Do, KoreaH.J. Choi, J.Y. Kim, J.G. Park Samsung AdvancedInstitute of Technology, Taejon, Korea

P-80:Antiferroelectric Properties of Novel Types of DoubleStereogenic Liquid Crystals 789S. Hashimoto, I. Kobayashi, Y. SuzukiShowa Shell Sekiyu K.K., Kanagawa, JapanT. Yajima, M. Terada, S. Kawauchi, K. Mikami,T. Imase Tokyo Institute of Technology, Tokyo, Japan

P-81: Generation of Pretilt Angle in Nematic Liquid Crystal inthe Cell with Oblique Non-Polarized UV Light Irradiationon Polymer Surfaces 795D.-S. Seo Soongsil University, Seoul, KoreaL.-Y. HwangKorea Electronics Co., Ltd., Kyungbuk, KoreaS. Kobayashi Science University of Tokyo inYamaguchi, Yamaguchi, Japan

P-82: Liquid-Crystal Alignment on Rubbed Polyimide Filmswith Various Side Chains 799S.I. Kim, T.J. Shin, M. Ree, J.C. Jung PohangUniversity of Science and Technology, Pohang, Korea

P-83: Improvement in Electro-Optical Properties of PDLCs803

W.-S. Park, Y.-B. Koh, S.-G. ParkInha University, Inchon, Korea

P-84:A Study on Surface Energy and Pretilt Angle of RubbedPolyimide Surfaces 807B.S. Ban, Y.B. Kim Kon-Kuk University, Seoul, Korea

P-85: Multi-Domain Alignment Films of Polystyrene /Polyimide of Liquid Crystals 811M.-H. Kim, H.-W. Kim, J.-D. Kim Korea AdvancedInstitute of Science and Technology, Taejon, Korea

P-86:The Cholesteric-Nematic Transition Bistability in anElectric Field 817Z Mikityuk, R. ZayatsState University 'Lvivska Polytechnika', Lviv, UkraineW.KalitaRzeszow University of Technology, Rzeszow, Poland

P-87: Surface Morphology of Photo-Crosslinkable Polyimideafter Irradiation of Polarized UV Light 821S.-J. Cho, D.-M. Shin, M.-K ParkHong-Ik University, Seoul, KoreaM.-H. Yi, K-Y. Choi Korea Research Institute ofChemical Technology, Taejon, Korea

P-88:Systhesis and Characterization of the Photo-ReactiveMaterials for Surface Modification of Polyimides andPhoto-Alignment 825D.-M. Shin, D.-M. Song Hong-ik University, Seoul,Korea

P-89:Two Colour Diffraction Display 829V.A. Tsvetkov, O.V. Tsvetkov Moscow State Academyof Instruments and Informics, Moscow, Russia

LA TE NEWS PAPER (Poster Session)

P-90: Improving FLC Grey Level Accuracy Using Ion Doping835

D.C. Ulrich, M.J. Towler, P. BonnettSharp Laboratories of Europe Ltd., Oxford, UKM. Kabe Sharp Corporation, Chiba, Japan

P-91: Effective Utilization of Analogue and Digital Greyscale inFerroelectric Liquid Crystal Devices 839M.J. Towler, P. Bonnett, D.C. UlrichSharp Laboratories of Europe Ltd., Oxford, UK

P-92: Improving Digital FLC Performance Using ReducedBlanking Double Line Addressing Method 843P. Bonnett, M.J. Towler, D.C. UlrichSharp Laboratories of Europe Ltd., Oxford, UK

P-93:Improved IPS-Mode Response Times through PolymerNetwork Stabilized 847C.C. Bowley, J. Vedrine, G.P. CrawfordBrown University, Rl

P-94: Dual-Domain Reflection from Holographically-FormedPDLCs 851C.C. Bowley, G.P. Crawford Brown University, RlH. YuanA Xerox New Enterprise Company, Palo Alto, CA

P-95:Technology of Silicon-Organic Films for LC Alignment857

M. Sobolevsky, V. Mazaeva, V. Kovalenko Elemento-Organic Compounds Chemistry and Technology,Moscow, RussiaV. Belyaev Central R&D Cometa, Moscow, RussiaA. KalshnikovMoscow State Technical University, Moscow, Russia

P-96:Polyfunctional Electrooptic PDChLC Cells 861V.V. Presnyakov, V.Ya. Zyryanov, V.F. ShabanovLV.Kirensky Institute of Physics, Krasnoyarsk, Russia

P-98: Defect Free Alignment of Thresholdless AntiferroelectricLiquid Crystal(AFLC) 865B. Jin, N. Woo, D. Sakong, J. SoukSamsung Electronics Co., Ltd., Kyungki-Do, Korea

P-99:Switching of FELC Devices Using a Capacitive DriveCircuit 869G. Lester University of Exeter, Exeter, UK

P-100: New Design and Its Characteristics of Full ColorAnode Panel for Field Emission Display 873S.K. Park, J.I. Han, W.K. Kim, M.G. Kwak, D.H. KimKETI, Kyungki-Do, Korea

24: Low Power AMLCDs

24.1: Invited Paper. Low-Refresh Driving Methods for a Low-Power LCD 879K. Suzuki, M. Akiyama, Y. OnozukaToshiba Corp., Yokohama, Japan

24.3: Full Color (4096 Colors) Reflective Cholesteric LiquidCrystal Display 883X.Y. Huang, A. Khan, D. Davis, C. Jones, N. Miller,J.W. Doane Kent Displays, Inc., Kent, OH

24.4: A 28-cm-Diagonal 177-dpi UXGA Color ReflectiveGuest-Host TFT-LCD 887K. Kanoh, N. Ikeda, H. Ikeno, Y. Yamaguchi,H. Hayama NEC Corporation, Kanagawa, Japan

25: LCD Lighting / GHLC

25.1: A Backlighting Unit with Polarization Recycle byStacked Transparent Plates 893M. SuzukiIBM Display Business Unit, Kanagawa, JapanY. Okl Stanley Electric Co., Ltd., Kanagawa, Japan

25.2: A Front-Lighting System Utilizing a Thin Light Guide897

T. Funamoto, O. Yokoyama, S. Miyashita,T. ShimodaSEIKO EPSON Corporation, Nagano, Japan

25.3: (Late News): Dye Combination of Guest-Host LiquidCrystal Displays 901H. Sekt, T. UwanoHachinohe Institute of Technology, Aomori, JapanT. Uchida Tohoku University, Miyagi, Japan

26: CRT Technologies

26.1: Invited Paper. What is the future of CRT? 907M. Maeda SONY, Japan

26.2: A New Approach for Color CRT Electron Gun Design913

H.Y. Chen, C.H. Yeh, Y.K. Ma, J.J. WangChunghwa Picture Tubes, Yangmei, Taiwan

26.3:ANew3-in. YAG Projection CRT for HDTV 917C. Jianbo, W. Qlonghua, L. Zulun, Z Mln University ofElectronic Science and Technology of China, Chengdu,China

26.4: Perception of Refracted Images on a Flat FaceplateCRT and an Inner-Curbed Flat Faceplate CRT 921J.H. Lim, N.J. KohLG Electronics Display Device Lab., Kyungbuk, Korea

27: Electroluminescent Displays

27.1: Invited Paper. Color EL Display Phosphor Materials andDevices 927S. Tanaka, H. KobayashiTottori University, Tottori, Japan

27.2: Calcium Sulfide and Lead-Doped Calcium SulfidePhosphor Layers Grown by Large Area Atomic LayerDeposition 933S.J. Yun, Y.S. Kim, J.-S. Kang, K.-S. NamElectronics and Telecommunications Research Institute,Taejon, Korea

27.3: Small Graphic White-Light Emitting ZnS.Pr.Ce TFELDisplay 937Y.-H. Lee, Y.-S. Kim, B.-K. Ju, M.-H. OhKIST, Seoul, KoreaS.J. Jung, N.Y. Lee, I. Lee, D.-K. ShinOrion Electric Co., Gumi, Korea

27A: Effects of Y/Nb Ratio on Luminescence Properties ofYNbO«:Bi Phosphors 941H.D. Park, C.H. Han, H.J. Kim Korea ResearchInstitute of Chemical Technology, Taejon, Korea

28: Integrated AMLCD

28.1: Invited Paper. 12.1 inch XGA Low Temperature Poly-SiTFT LCD 947Y.-M. Ha, Y.-H. Jung, B.-K. Kim, K-J. Kim, J.-S. Kim,S.-Y. Yoon, G.-B. Ahn, H.-S. Choi, H.-S. SohLG Electronics Inc., Kyungki-Do, Korea

28.2: A Four Terminal Polycrystalline Silicon TFT for AMLCDApplication 953CM. Park, H.B. Choi, J.S. Yoo, J.H. Jeon, M.K HanSeoul National University, Seoul, Korea

28.3:5 inch VGA Low Temperature Poly-Si TFT AddressedLCD

957N. D. Young, MJ. Edwards, M.J. Trainor, J.R. Ayres,R.M. Bunn, D.J. McCulloch, CA. FisherPhilips Research Laboratories, Surrey, UK

28.4: A Gate Driver Circuit for Poly-Si TFT-LCD Panels forHDTV/XGA Projectors 961B.D. Choi, O.K. Kwon, I. LeeHanyang University, Seoul, KoreaH.S. Jang, K.H. Oh, H.G. Kim, M.J. SohLG Corporate Institute of Technology, Seoul, Korea

29: LCD Modes

29.1: Addressing r V,™ Ferroelectric Liquid Crystal Displays967

J. C. Jones, M.H. Anderson, C.V. Brown, P.E. Dunn,A. Graham, J.R. Hughes, K.P. Lymer, KG. Russell,D. Scattergood Defence Evaluation and ResearchAgency (DERA), Worcestershire, UKM. Koden, S. Miyoshl, K. Nonomura, A. Tagawa,M. Sugino Sharp Corporation, Chiba, JapanM.J. TowlerSharp Laboratories of Europe Ltd. (SLE), Oxford, UK

29.2: Investigation of Micro Deflection Liquid Crystal DisplayModes 971M. Ishimaru, H. Okada, H. OnnagawaToyama University, Toyama, Japan

29.3: Flicker and Image Sticking in Hybrid Alignment NematicPanels 975H. InoueIBM Display Business Unit, Kanagawa, Japan

29.4: (Late News): Amorphous Silicon Thin-Film TransistorActive-Matrix Reflective Cholesteric Liquid CrystalDisplay 979J.Y. Nahm, T. Goda, B.H. Min, T.K Chou, J. KanickiThe University of Michigan, Ann Arbor, MlX.Y. Huang, N. Miller, J.W. DoaneKent Displays Inc., Kent, OHV. Sergan, P. Bos Kent State University, Kent, OH

29.5: (Late News): Analysis and Influence of an ElectricDouble Layer on Polymer Alignment Layer in LC Cell

983KY. Han, KB. ParkSamsung Display Device Co., Ltd., Kyungki-Do, KoreaS.H. Noh, J.S. Lee, S.D. NohSamsung Display Device Co., Ltd., Pusan, Korea

30: PDP / Discharge;

30.1: Improvement of Luminance and Luminous Efficiency inAC Color Plasma Displays with Combined Phosphor

Deposition Structure by Using New TransmissiveProtecting Material to Ultraviolet Rays 989K Yoshlda, H. Uchiike, M. SawaHiroshima University, Hiroshima, JapanS. Ahn Samsung Advanced Institute of Technology,Kyungki-Do, Korea

30.2: The Study on the High Performance Gas Mixture, He-Xe-Ne-Ar in Color Plasma Display Panel 993H.-G. Park, W.-T. Kim, H.-J. Ha, J.-H. Ryu, M.-H. Park,B.-Y. Park LG Electronics, Inc., Kyungpuk, KoreaB.K. Min, H.Y. Choi, S.H. LeeInha University, Inchon, Korea

30.3: Studies on the Influence of Parameters on the DischargeCharacteristics in AC PDP Cell 997H. Ren, D. Zheng, J. Hu, J. SunXi'an Jiaotong University, Shaanxi, China

30.4: Numerical Fluid Model of a Discharge in ArbitaryConfiguration for an AC Plasma Display 1001W. Park, W.T. Lee, J.W. Lee, H.Y. Jang, H.G. Kwon,S.Y. Choi, S.J. Im, S.J. Lee, S.I. Ahn, J.M. KimSamsung Advanced Institute of Technology, Kyungki-Do, Korea

31: ELD Technologies

31.1: Electrical and Optical Characterization of SrS:Cu ACThin-Film Electroluminescent (TFEL) Devices Grown byElectron Beam Deposition.... 1007S.S. Lee, S. Lim, G.K ChangDankook University, Choongnam, Korea

31.2: Analog Active Matrix Electroluminescent (AMEL)Displays 1011A. Ipri, R. Stewart, D. Jose, J. HasiliSamoff Corporation, NJM. AquileraPlanar America, OR

31.3: High Luminance 2n2Si1.xGex04:Mn Thin-FilmElectroluminescent Devices Using a Thick CeramicSheet Insulating Layer 1015T. Minaml, Y. Kubota, T. MiyataElectron Device System Lab., Ishikawa, Japan

31.4: Optimal Design of PMS Virtual Display Technology forUsing in Mobile Telecommunication Terminals

1019Y.K Kim, I.H. Kwon CTN System Co., Seoul, KoreaH.C. Moon Korea Electronics Technology Institute,Kyungki-Do, Korea

32: LCD Materials and Components

32.1: A Novel, Photosensitive Ultrathin Black Matrix System1025

R.W. Sabnis, J.W. Mayo, M.D. StroderBrewer Science Inc., Rolla, MOK. Aoba, K. Ema, Y. Sone, T. Nihira, A. YanagimotoNissan Chemical Industries Ltd., Tokyo, Japan

32.2: PECVD SiOxNy Black Matrix for Low Reflection AMLCDApplications 1029Y. Lu, T. Gu, N. VergithOptical Imaging Systems, Inc., Northville, Ml

32.3: Liquid Crystal Material Development for STN-LCD's1033

H. Hirschmann, C. Weller, S. Schupfer,V. Reiffenrath Merck KGaA, Darmstadt, GermanyK. Totani, A. KojimaMerck Japan Limited, Kanagawa, Japan

32.4: (Late News): Optimization of the Contrast andTransmittance in One-Polarizer PDFLC Cells 1037V.Ya. Zyryanov, S.L. Smorgon, V.F. ShabanovLV. Kirensky Institute of Physics, Krasnoyarsk, RussiaE.P. Pozhidaev, A.L. Andreev, I.N. KompanetsP.N. Lebedev Physical Institute, Leninsky, RussiaS.T. ShinSamsung Electronics Co., Ltd., Kyungki-do, Korea

33: Advanced LC Technologies

33.1: Reduction of the DC Offset Voltage in HAN-LCDs1043

Y. Tanaka, Y. Goto, Y. limura Tokyo University ofAgriculture and Technology, Koganei, Japan

33.2: Factors Determining Temperature-Matched Film-Compensation of STN Displays 1047M. Bosma Akzo Nobel Central Research, Arnhem, TheNetheriands

33.3: Optimisation of the Zenithal Bistable Nematic LiquidCrystal Device (ZBD™) 1051G. P. Bryan-Brown, E.L. Wood, J.C. Jones,Defence Evaluation and Research Agency, Malvem, UK

33.4: Dynamic Behavior of OCB-Cell with Fast Response fora Color Sequential Liquid Crystal Display 1055S. Onda, T. Miyashita, T. UchidaTohoku University, Sendai, Japan

33.5: (Late News): Optimization for Reflective STN-LCDs witha Single Polarizer 1059M. Ohizumi, T. Hoshino, M. KanoALPS Electric Corp., Sendai, JapanT. Miyashita, T. UchidaTohoku University, Sendai, Japan

34: PDP Cell / Driving

34.1: Invited Paper. Research & Development of Surface-Discharge Color Plasma Display Technologies 1065T. Shinoda Fusitsu Laboratories Ltd., Japan

34.2: A New Energy Recovery Circuit for AC Plasma Display1071

J.-H. Yang, J.-K. Kim, C.-K Yoon, K.-W. WhangSeoul National University, Seoul, Korea

34.3: An Extended Equalizing Pulse Technique for ReducingGray Scale Disturbances of PDPs Below the MinimumVisual Perception Level 1075Y.-VV. Zhu, T. Shiga, T. Ohe, S. Mikoshiba TheUniversity of Electro-Communications, Tokyo, JapanT. Ueda, K Kariya, K. TodaFujitsu Ltd., Kawasaki, Japan

34.4: Brightness Analysis and Optimization of an AC PDPCell Using Ray Optics 1079Y.H. Kim, J. Kim, H.S. Jeong, B. Lee, K-W. WhangSeoul National University, Seoul, Korea

35: Organic EL

35.1: Invited Paper. Some Aspects of DegradationMechanism in Organic Electroluminescent Diodes

1085T. Tsutsui, D. Zou, M. YahiroKyushu University, Fukuoka, Japan

35.2: Polymeric Electroluminescent Devices Using Disilyl-PPV Derivatives 1091H.Y. Chu, D.H. Hwang, L.M. Do, T. ZyungElectronics and Telecommunications Res. Institute,

Taejon, Korea35.3: (Late News): OLED Based Display for Automotive

Applications 1095Y. He, S. Gong, R. Hattori, J. KanickiUniversity of Michigan, Ann Arbor, Ml

36: LCD Manufacturing

36.1: Study of Ultrasonic Washing Induced Surface Damageof LCD Glass Substrates 1101Y. Fukushi, M. Anma, H. YamamotoComing Japan K. K., Shizuoka, Japan

36.2: Defining Display Quality in Large Area Photomasks1105

J. A man, P. Ekberg, T. Sandstr&m, L. StiblertMicronic Laser Systems AB (pulb.), TSby, Sweden

36.3: A TFT Manufactured by 4 Masks Process with NewPhotolithography 1109C.W. Han, KJ. Hwang, S.S. Bae, S.J. Bae, H.Y. Lee,CD. Kim, H.S. SohLG Electronics Inc., Kyungki-Do, Korea

36.4: Gate Oxide Films for Low-Temperature Poly-Si TFTLCD Applications 1113W.R. Harshbarger, T. Takehara, Y. LeGrice, R. Qiu,C.C. TsaiApplied Komatsu Technology, Santa Clara, CA

37: Liquid Crystal Technologies

37.1: TN-LCD Compensation Film with Holographic FormBirefringence 1119C. Joubert, J.C. Lehureau Thomson-CSF / LaboratoireCentral de Recherches, Orsay, France

37.2: Orientation of Liquid Crystals on Rubbed HomeotropicAlignment Layer 1123J.J. Lyu, KH. Kim, J.H. SoukSamsung Electronics Co., Ltd., Kyungki-Do, KoreaJ.H. Kim, S. Kumar Kent State University, Ohio

37.3: Recent Development in Polymer Dispersed LiquidCrystal Materials for Reflective Silicon Light ValveApplication 1127D.B. Chung, E. Vu, R. Flack, B. NicholsonNational Semiconductor Corporation, Santa Clara, CA

37.4: A Novel Method for Measuring Both the Twist Angle andthe Cell Gap of LC Cell Using Spectral Analysis 1131K.H. Yoon, S.H. Ahn, J.H. Kim, W.Y. Kim, S.B. KwonLG Electronics Inc., Kyungki-Do, Korea

37.5: (Late News): High Efficiency Color Reflective Displayswith Extended Viewing Angle 1135H. Yuan, G. Hu, T. Fiske, A. LewisA Xeros New Enterprise Company, Palo Alto, CA

38: FED Materials /Vacuum

38.1: Invited Paper. Tetrahedrally Bonded Amorphous Carbonfor Field Emission Displays 1143W. I. Milne Cambridge University, Cambridge, UK

38.2: C4H10 and C4He PECVD of Diamond Like Carbon Filmson Large Area Substrates 1149S. Vemay, D. Won, J. PerrinBalzers Process Systems, Palaiseau, France

38.3: Addressable Carbon Thin film Cathode 1153Z Li Tolt, R.L. Fink, L.H. Theusen, R. Robinder,L Jacobs, Z YanivFEPET, Inc., Austin, TX

38.4: High Vacuum Packaging and Vacuum Evaluation for

Field Emission Display 1157S.J. Jung, G.J. Moon, K.S. Kim, M.S. Kim, K.J. Woo,N.Y. Lee Orion Electric Co., Ltd., Kyungki-Do, KoreaS. AhnAjou University, Kyungki-Do, Korea

39: Large Area Displays

39.2: A 48-inch High Luminance and Resolution Rear-Projection Display 1163C Jianbo, C. Zexiang, W. Jun, C. Guichuang,L. ZhulunElectron Society of China, Chengdu, China

39.3: Large Scale Full Color Laser Projection Display1167

Y. Hwang, J. Park, Y. Kim, J.M. Kim SamsungAdvanced Institute of Technology, Kyungki-Do, Korea

39.4: First Images from an Image Mode Laser ProjectionDisplay 1171J.A. Firehammer, G.P. CrawfordBrown University, Providence, RlN.M. LawandySpectra Science Corporation, Providence, Rl

ASIA DISPLAY '98 Executive Committee 1175ASIA DISPLAY '98 Program Committee 1175ASIA DISPLAY '98 SESSION Chairmen / Co-Chairmen

1180AUTHOR INDEX 1183