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Memory Technologies Today = Tradeoffs 3D XPoint™ Technology : An Innovative, High-Density Design Speed Cost Volatility With today’s memory technologies, you can get incredible performance, but only if you spend a lot per MB and you don’t mind your data going away when the power does. Or, you can keep costs reasonable if you’re willing to sacrifice speed. Ideally, you want memory that’s fast, inexpensive and non-volatile. NAND DRAM 3D XPoint™ Technology Memory Cell Each memory cell can store a single bit of data. Selector Whereas DRAM requires a transistor at each memory cell—making it big and expensive—the amount of voltage sent to each 3D XPoint™ Technology selector enables its memory cell to be written to or read without requiring a transistor. Stackable These thin layers of memory can be stacked to further boost density. Cross Point Structure Perpendicular wires connect submicroscopic columns. An individual memory cell can be addressed by selecting its top and bottom wire. DRAM 3D XPoint™ Technology 1GB 1GB 1GB 1GB 1GB 1GB 1GB 1GB 1GB 1GB Processor 3D XPoint™ Technology Non-Volatile 3D XPoint™ Technology is non-volatile—which means your data doesn’t go away when your power goes away—making it a great choice for storage. High Endurance Unlike other storage memory technologies, 3D XPoint™ Technology is not significantly impacted by the number of write cycles it can endure, making it more durable. ~8x to 10x Greater Density than DRAM 1 3D XPoint™ Technology’s simple, stackable, transistor-less design packs more memory into less space, which is critical to reducing cost. Transforming the Memory Hierarchy For the first time, there is a fast, inexpensive and non-volatile memory technology that can serve as system memory and storage. Unprecedented Storage Performance NAND 3D XPoint™ Technology PCIe* NVMe* NAND memory provides state-of-the-art storage performance today and is up to 1300x faster than hard drives. 3D XPoint™ Technology is up to 100s of times faster than NAND. In the time it takes a hard drive to sprint the length of a basketball court... If storage devices were sprinters… ...NAND could finish a marathon... ...and 3D XPoint™ Technology could circle the globe! 1300x Faster 1 1000x Faster 1 10x More Performance 1 3D XPoint™ Technology delivers up to 10x more performance than NAND across a PCIe* NVMe* interface. Find out more: www.intel.com/nvm 24,902 Miles 1Technology claims are based on comparisons of latency, density and write cycling metrics amongst memory technologies recorded on published specifications of in-market memory products against internal Intel specifications. Intel, the Intel logo, and 3D XPoint are trademarks of Intel Corporation in the U.S. and/or other countries. *Other names and brands may be claimed as the property of others. © 2015 Intel Corporation. Today’s Technology New Milliseconds Microseconds Nanoseconds DRAM Latency NAND HARD DRIVE XX XXX XXX XXX XX XX X Latency measurements by technology 1 slower faster INTEL INSIDE. ENDLESS POSSIBILITIES OUTSIDE. 3D XPOINT ™ 94 Feet 26.2 Miles THE WAIT IS OVER! 3D XPOINT™ TECHNOLOGY Intel disrupts the industry with better storage memory that is fast, inexpensive and non-volatile. Now your processor can work much faster, rather than at a fraction of its potential.

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Page 1: INTEL INSIDE. ENDLESS POSSIBILITIES . · PDF fileMemory Technologies Today = Tradeoffs 3D XPoint™ Technology: An Innovative, High-Density Design Speed Cost Volatility With today’s

Memory Technologies Today = Tradeoffs

3D XPoint™ Technology:An Innovative, High-Density Design

Speed Cost Volatility

With today’s memory technologies, you can get incredible performance, but only if you spend a lot per MB and you don’t mind your data going away when the power does. Or, you can keep costs reasonable if you’re willing to sacrifice speed.

Ideally, you want memory that’s fast, inexpensive and non-volatile.

NAND

DRAM

3D XPoint™ Technology

Memory CellEach memory cell can store a single bit of data.

SelectorWhereas DRAM requires a transistor at each memory cell—making it big and expensive—the amount of voltage sent to each 3D XPoint™ Technology selector enables its memory cell to be written to or read without requiring a transistor.

StackableThese thin layers of memory can be stacked to further boost density.

Cross Point StructurePerpendicular wires connect submicroscopic columns. An individual memory cell can be addressed by selecting its top and bottom wire.

DRAM 3D XPoint™ Technology

1GB1GB 1GB 1GB

1GB 1GB 1GB

1GB 1GB 1GB

Processor3D XPoint™ Technology

Non-Volatile3D XPoint™ Technology is non-volatile—which means your data doesn’t go away when your power goes away—making it a great choice for storage.

High EnduranceUnlike other storage memory technologies, 3D XPoint™ Technology is not significantly impacted by the number of write cycles it can endure, making it more durable.

~8x to 10x Greater Density than DRAM13D XPoint™ Technology’s simple, stackable, transistor-less design packs more memory into less space, which is critical to reducing cost.

Transforming the Memory HierarchyFor the first time, there is a fast, inexpensive and non-volatile memory technology that can serve as system memory and storage.

Unprecedented Storage Performance

NAND 3D XPoint™Technology

PCIe*NVMe*

NAND memory provides state-of-the-artstorage performance today and is up to1300x faster than hard drives.

3D XPoint™ Technology is up to 100s of times faster than NAND.

In the time it takes a hard drive to sprint the length of abasketball court...

If storage devices were sprinters… ...NAND could finish a marathon... ...and 3D XPoint™ Technology could

circle the globe!

1300x Faster1

1000x Faster1

10x More Performance1

3D XPoint™ Technology delivers up to10x more performance than NAND across a PCIe* NVMe* interface.

Find out more: www.intel.com/nvm

24,902 Miles

1Technology claims are based on comparisons of latency, density and write cycling metrics amongst memory technologies recorded on published specifications of in-market memory products against internal Intel specifications.

Intel, the Intel logo, and 3D XPoint are trademarks of Intel Corporation in the U.S. and/or other countries. *Other names and brands may be claimed as the property of others.© 2015 Intel Corporation.

Today’s Technology

New

Milliseconds Microseconds Nanoseconds

DRAM

Latency

NAND

HARDDRIVE X X X X X X X X

X X XX XX X

X

Latency measurements by technology1

slower faster

INTEL INSIDE.ENDLESS POSSIBILITIES OUTSIDE.

3D XPOINT™

94 Feet26.2 Miles

Intel disrupts the industry with betterstorage memory. The wait is over!

Finally, memory that is fast, inexpensive and non-volatile. Now your processor

can work much faster, rather than at a fraction of its potential.

THE WAIT IS OVER!3D XPOINT™ TECHNOLOGY

Intel disrupts the industry with better storage memory that is fast, inexpensive and non-volatile.Now your processor can work much faster, rather than at a fraction of its potential.