integrated mems by adhesive bonding and open...
TRANSCRIPT
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Integrated MEMS by adhesive bonding and open collaboration
M.Esashi, S.Tanaka (Tohoku University)
1. Introduction
2. Integrated MEMS by adhesive wafer bonding
Principle and filters
Piezoelectric switches
Tactile sensor network
Massive parallel EB exposure system
3. Wafer level packaging
4. Open collaboration
5. Conclusions 13 March. 2013, MEF2013
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2 1990 2000 2010 year
Pressure sensor
Accelerometer
& Gyro
Communication
Image
(MEMS array)
Engine control
Blood pressure
sensing
Accelerometer
for airbag
Tire pressure
monitoring
Gyro for camera
Accelerometer for
user interface
MEMS switch
Print head Display
(DMD)
IR imager
(Night vision)
Trends of MEMS (Micro Electro Mechanical Systems) products (+13% in sales)
Oscillator
Microphone
Structure + sensor +
circuit + actuator
Advantages
・Miniaturization
(high sensitivity, low
power, good spatial
resolution, etc.)
・Integration
(low cost, array etc.)
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3
Inertia sensors (SIP) MEMS chip + LSI chip
Array MEMS for display
(SOC) MEMS on LSI
(Toyota)
(ST microelectronics)
(Invensense)
MEMS for wireless communication
(Adhesive bonding of MEMS wafer on LSI wafer)
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4 Hetero integration by adhesive bonding
MEMS on carrier wafer
(Piezoelectric thin film etc.) LSI wafer
After adhesive bonding and
removal of carrier wafer
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LTCC wafer with through-
via interconnection
...... ...... ...... ......
Wafer level sealing
Dicing
Packaged hetero
integration chip
Piezoelectric filter
etc
Piezoelectric
MEMS switch etc
Tunable filter
Piezoelectric MEMS
switch on LSI
Adhesive bonding
SAW filter on LSI
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1. Introduction
2. Integrated MEMS by adhesive wafer bonding
Principle and filters
Piezoelectric switches
Tactile sensor network
Massive parallel EB exposure system
3. Wafer level packaging
4. Open collaboration
5. Conclusions
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6 Wafer-Level Hetero Integration Processes
2) Device fabrication → Device transfer using polymer → Polymer removal
1) Film transfer using polymer → Device fabrication → Polymer removal
3) Film preparation → Device fabrication → Device transfer by bonding and
polymer removal
High temp. process
High temp. deposition
Bonding & polishing
IC etc.
IC etc.
IC etc.
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7 Application of adhesive bonding
Tactile sensor
Bonding with BCB (Cyclotene)
Micromechanical resonator
Bonding with polyimide
Partly etching of polymer after bonding
SAW filter on LSI
Bonding with UV curable resin
Remove after temporary bonding
Surface micromachining
Sacrificial layer
Adhesive bonding
Polymer
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8 (H.Yanagida, IEEE MEMS2011, 324)
Removal of polymers by ozone
in acetic acid
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9 AlN/Si composite disk resonators and FBAR for multiband wireless systems
(T.Matsumura (NICT), J. of Micromech. Microeng., 20, 9 (2010) 95027)
Disk resonator
High freq. laser doppler
imaging (293 MHz)
(Polytec UHF120)
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FBAR (Film Balk Acoustic Resonator)
(T.Matsumura, M.Esashi, H.Harada and
S.Tanaka, 2009 IEEE Internl. Ultrasonic
Symposium (2009) 2141)
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(A.Kochhar, et.al., “Monolithic fabrication of film bulk acoustic
resonators above integrated circuit by adhesive-bonding-
based film transfer, 2012 IEEE Ultrasonics Symposium, 5E-3)
CMOS-FBAR voltage controlled oscillator
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SAW devices on LSI
(K.-D.Park, M.Esashi, S.Tanaka, IEEJ The 26th Sensor Symposium, 37 (2009))
SAW device
LSI
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13 SAW oscillator on LSI (502 MHz)
Frequency spectrum
Small phase noise owing to
the small stray capacitance
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14 14 (M. Kadota et al. (Murata Mfg.), Jpn. J. Appl. Phys., 49 (2010) 07HD26-1)
Tunable filter on breadboard using Si variable capacitors and SAW filters
(T.Yasue, T.Komatsu et.al., Transducers 2011)
MEMS
Monolithic tunable filter using MEMS variable capacitors and SAW filters
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15 Tunable SAW filter using MEMS variable capacitor
(T.Yasue, Transducers 2011, Beijing (2011) 1488)
SAW device
MEMS variable capacitor
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6) Pattering of PR mold 9) Cu wet etching
8) Photoresist removal 5) Cu seed deposition
7) Ni electroplating 10) O2 ashing for release
Cu
PR
1) Patterning of Au/Cr
electrodes
2) Fabrication of SAW
resonators
3) Fabrication of stop
bumps
IDT
Bump
4) Patterning of PR
sacrificial multilayer
Ni
PR
(T.Yasue, Transducers 2011, Beijing (2011) 1488)
Fabrication process of tunable SAW filter using MEMS variable capacitor
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Al
BST
Pt
Au
Au
Pl Ti
SAW
resonator Pl
B-LN 0.5T 15º-Y mirror/GC #1000
BST ( (Ba1-xSrx)TiO3 ) varactor
SAW resonator
Transferred BST varactor
(Tuning ratio of 1.6 at 3 V)
Small size ferroelectric variable capacitor for tunable SAW filter
(H.Hirano, 2011 IEEE Internl, Ultrasonic Symp., (2011) )
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Laser debonding
Selective transfer by
laser debonding
(T.Samoto, The 29th Sensor
Symposium on Sensors,
Micromachines and
Microsystems (2012) p.35)
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PZT MEMS Switch on LSI
A
C
A B
GND RF I/O GND
Contact
Bias electrode
LSI
Al pad
C
BAuPZT
Cu SiO2
Pt
(Matsuo, Moriyama, Esashi, Tanaka (Tohoku Univ.), IEEE MEMS 2012, 1153-1156)
PZT Pt
Au
10MΩ
Deflection
0
2
4
6
8
10
12
14
0 2 4 6 8 10D
efle
ctio
n [μ
m]
Voltage [V]
Initial gap
Initial gap
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Fabrication process of PZT MEMS Switch on LSI
0. LSI
Al pad
SiO2
LSI
1. SiO2 deposition and polishing
Contact
Polymer
Signal line
2. SiO2 etching
3. Fabrication of Au electrodes
and contact
4. Polymer spin-coating
5. Fabrication of alignment mark
and barrier layer deposition
Dummy wafer
6. Pt/Ti electrodes and PZT
patterning
7. Au electrode patterning
9. Bonding (4 and 8)
10. Dummy wafer and TiO2
etching
11. Polymer etching
13. Au electroplating
14. Sacrificial layer etching
Pt/Ti electrodePZT
Polymer8. Polymer spin-coating
Al
12. Seed layer deposition and
photoresist patterning
Dummy wafer
LSI
Au electrode
Cu Photoresist
A B C
TiO2
Alignment mark
0. LSI
Al pad
SiO2
LSI
1. SiO2 deposition and polishing
Contact
Polymer
Signal line
2. SiO2 etching
3. Fabrication of Au electrodes
and contact
4. Polymer spin-coating
5. Fabrication of alignment mark
and barrier layer deposition
Dummy wafer
6. Pt/Ti electrodes and PZT
patterning
7. Au electrode patterning
9. Bonding (4 and 8)
10. Dummy wafer and TiO2
etching
11. Polymer etching
13. Au electroplating
14. Sacrificial layer etching
Pt/Ti electrodePZT
Polymer8. Polymer spin-coating
Al
12. Seed layer deposition and
photoresist patterning
Dummy wafer
LSI
Au electrode
Cu Photoresist
A B C
TiO2
Alignment mark
0. LSI
Al pad
SiO2
LSI
1. SiO2 deposition and polishing
Contact
Polymer
Signal line
2. SiO2 etching
3. Fabrication of Au electrodes
and contact
4. Polymer spin-coating
5. Fabrication of alignment mark
and barrier layer deposition
Dummy wafer
6. Pt/Ti electrodes and PZT
patterning
7. Au electrode patterning
9. Bonding (4 and 8)
10. Dummy wafer and TiO2
etching
11. Polymer etching
13. Au electroplating
14. Sacrificial layer etching
Pt/Ti electrodePZT
Polymer8. Polymer spin-coating
Al
12. Seed layer deposition and
photoresist patterning
Dummy wafer
LSI
Au electrode
Cu Photoresist
A B C
TiO2
Alignment mark
0. LSI
Al pad
SiO2
LSI
1. SiO2 deposition and polishing
Contact
Polymer
Signal line
2. SiO2 etching
3. Fabrication of Au electrodes
and contact
4. Polymer spin-coating
5. Fabrication of alignment mark
and barrier layer deposition
Dummy wafer
6. Pt/Ti electrodes and PZT
patterning
7. Au electrode patterning
9. Bonding (4 and 8)
10. Dummy wafer and TiO2
etching
11. Polymer etching
13. Au electroplating
14. Sacrificial layer etching
Pt/Ti electrodePZT
Polymer8. Polymer spin-coating
Al
12. Seed layer deposition and
photoresist patterning
Dummy wafer
LSI
Au electrode
Cu Photoresist
A B C
TiO2
Alignment mark
Si wafer
IC wafer
PZT
Polymer Metal
(Matsuo, Moriyama, Esashi, Tanaka, IEEE MEMS 2012, 1153-1156)
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CMOS switch control circuit
INV INVINVINV
Delay Circuit
CLK
VDD
GND
SOUT_1
(Output “00”)
SOUT_2
(Output “10”)
SOUT_3
(Output “01”)
SOUT_4
(Output “11”)
Delay Circuit
INV
INV
INV
Decorder DFF INV
INVDFF
DFF
DFF
INV
INV
INV
IN_1
IN_2
0.0
4.0
8.0
12.0
16.0
20.0
24.0
0 2000 4000 6000 8000 10000
Vo
lta
ge
[V]
Time [μs]
IN_1
IN_2
DOUT_1
DOUT_2
DOUT_3
DOUT_4
VDD : power supply, 3.3V
CLK : clock signal,3.3 V, 5 MHz
IN_1, IN_2 : switching signal, 3.3 V
DOUT_1~4 : D flip-flop’s output
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(S.Kobayashi & M.Esashi, Technical Digest of the 9th Sensor Symposium,(1990),137)
Common 2 wires tactile sensor array (polling type)
(1,000 Tr./chip in our lab., 1,000,000 Tr./chip in company, 10,000,000,000 Tr/chp now)
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23 23 Tactile sensor network for robot (event driven type) (M.Makihata, M.Muroyama, 26th Sensor Symposium (Oct. 15-16, 2009))
Safe nursing robot
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Fabrication process of tactile sensor (M.Makihata, M.Muroyama et.ai., 2012 MRS Spring Meeting, San Francisco (2012) B3.2)
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25 (M.Makihata, M.Muroyama et.ai., 2012 MRS Spring Meeting, San Francisco (2012) B3.2)
Tactile sensor network
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26 (N.Ikegami et.al., Active-Matrix nc-Si Electron Emitter Array for Massively Parallel Direct-Write
Electron-Beam System, SPIE 2012 Advanced Lithography (2012/2/12-16) San Jose, USA)
nc (nanocrystalline)-Si emitter array fabricated on SOI substrate
resist pattern by 1:1
EB exposure
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Structure of 100×100 active matrix nc-Si emitter
Massively Parallel EB (Electron-Beam) Exposure System
Electronic
aberration
compensation
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28 LSI
Glass
Electron source process
Glass
Si nc-Si
Polymer
Polymer
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1. Introduction
2. Integrated MEMS by adhesive wafer bonding
Principle and filters
Piezoelectric switches
Tactile sensor network
Massive parallel EB exposure system
3. Wafer level packaging
4. Open collaboration
5. Conclusions
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MEMS have moving parts
→ Direct molding with plastics can
not be done.
→ small size (chip size encapsulation,
suitable for surface mounting)
→ high yield (protection of MEMS
structures during dicing)
→ high reliability (hermetic sealing)
→ low cost (minimal investment for
assembly, no use of expensive
ceramic packages etc)
Wafer level packaging
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Au
(M.Mohri (Nikko Ltd.), A.Okada, H.Fukushi, S.Tanaka and M.Esashi, 23th
Convention on Electronic Packaging, Yokohama, p.51 (March 11,2009))
LTCC with through-via interconnection
Thermal expansion
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(a) Porous Au bump by (b) Nano-porous gold bump by (c) TLP (SLID) bonding
etching of LTCC etching out of Sn from Au-Sn using Cu-Sn-Cu
(Collaboration with FhG ENAS)
Electrical Interconnection from the feedthrough of LTCC
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Metal-metal bonder (S.Matsuzaki, S.Tanaka, T.Baba and M.Esashi, The
28th Sensor Symposium on Sensors, Micromachines
and Applied Systems, Tokyo (2011) 63)
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1. Introduction
2. Integrated MEMS by adhesive wafer bonding
Principle and filters
Piezoelectric switches
Tactile sensor network
Massive parallel EB exposure system
3. Wafer level packaging
4. Open collaboration
5. Conclusions
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MEMS process facility for 20 mm wafer
Many process equipments have been made in house.
Simple and basic equipments are suitable for training people who have experiences of all the process and for developing new devices taking advantages of process flexibility.
The facility has been shared by many laboratories. More than 100 companies dispatched researchers (full time, 2years).
Unique facility like toy
for MEMS prototyping
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Ricoh, Toyota motor, Pioneer, Nippon signal, Toppan TDC, Kitagawa iron works, Sumitomo precision, NIDEC COPAL elec. Nikko, Toyota central R&D lab, Nippon dempa kogyo, Japan aviation elect. Ind., MEMS core, MEMSAS, Furukawa Electric, Denso Laboratories in Tohoku Univ.
Shared CMOS LSI wafer
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Next generation wireless
system group
Yugami, Tanaka, Yamaguchi,
Endo, Iguchi Toppan TDC,
Nippon Dempa Kogyo
Multi-frequency Lamb wave oscillator
Biomedical microsystem
group
Matsue, Nishizawa, Haga, Kusu
Japan aviation electronics industry
MEMSAS
Bio LSI
Sensor network,functional
sensor group
Kuwano, Miura, Ono,Tanaka,
Nagasawa, Muroyama Kitagawa,
Sumitomo precision product,
Nidec copal electronics, Toyota,
Toyota Central R&D, Pioneer
Tactile sensor network
Fabrication test
equipment group
Samukawa, Esashi, Miura, Ono, Yamaguchi, Kumano, Miyashita
MEMS core, Nikko
Metal-metal boner
Optical microsystem group
Hane, Kanamori, Kawai
Ricoh, Nippon signal, Toyota,
Toyota Central R&D,
Furukawa Electric
2D PZT optical scanner
Technology society
system working group
Harayama, Sionoya, Kawai,
Miyashita, Matsuzaki
Shared patent
Innovation center for fusion of advanced technologies 2007~2016FY
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Tohoku Univ. Aobayama campus
Jun-ichi Nishizawa memorial
research center (4/6 inch
MEMS process line)
(Hands-on access fab.)
Micro-nanomachining research and
education center (2 inch LSI process line)
Prototyping facilities World-leading innovative R&D project 2010 ~ 2013FY
MEMS prototyping room in
Tohoku Univ.(20mm)
(Initial stage prototyping)
AIST MEMS building in Tsukuba
(8 inch process line) (R.Maeda)
(Production stage prototyping)
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Shared facility for industry to prototype MEMS devices (4 / 6 inch)
Hands-on access fab. (Nishizawa memorial research center in Tohoku Univ.)
Contact person : Assoc. Prof. Kentaro Totsu [email protected]
Companies which cannot
prepare their own facility
dispatch their employees to
operate equipments by
themselves.
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MEMS Core Co.Ltd (President : K.Honma)
MEMS contract development, prototyping
and small volume production (2001~)
http://www.mems-core.com/
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41 MEMS switch factory (Advantest components (Sendai))
MEMS switch for LSI tester
(A.Nakamura et.al.,Advantest Technical
Report, 22 (2004), 9-16)
Immune to electrostatic discharge up to 1000V
Wide frequency range (DC~10GHz)
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MEMS Training Program in Sendai MEMS park consortium
Since Apr.2007. Fee 1 million yen. Trainee participate with own subject.
16 companies participated.
Planning,
design
Fabrication
(4 inch process) Testing
Presentation,
report
10 ~ 20 d 30 ~ 60 d ~ 10 d 3 d
Lectures on Internet School
of Tohoku University
3 months
Design Ex. Capacitive 3-axis accelerometer Training of Fabrication
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44 Shared facility for industry to prototype MEMS devices (4 / 6 inch) Hands-on access fab.
Nishizawa
memorial
research
center
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45 Users approximately 80 companies
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46 Sendai MEMS showroom (2012/5/16 renewal opening)
Efficient way to access accumulated knowledge
is important for heterogeneous integration
Catalog
http://www.mu-sic.tohoku.ac.jp/showroom_e/index.html
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A1 Electrical measurement : Galvanometer etc.
A2 Wired communication : Microphone, Headphone
A3 Wireless communication : Vacuum tube radio,
Transistor radio
B1 Recording : phonograph (Edison), Vacuum tube
magnetic tape recorder
B2 Computer : Mechanical computer, calculator
C1 Vacuum tube : Various vacuum tubes, Vacuum tubes
for take-out, Manuals
C2 Transistor・IC : From vacuum tube to transistor,
Development of LSI
C3 Haggerty’s forecast (1964)
D1 Optical equipments : Microscope×3, Analog
recording camera, 8mm movie etc.
D2 Optical instruments : Radiation thermometer etc.
E1 Hobby : Mechanical doll, Aibo, Micro flying robot and
computer controlled model car
E2 Automobile museum: Model T Ford、Model A Ford
E3 Nishizawa memorial room
F Materials for take-out (history of technology)
H Books on the history of technology
I Materials related to Tohoku Univ. and companies
Historical Museum of Technology http://www.mu-sic.tohoku.ac.jp/museum/
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FhG Germany – Sendai city partnership
signing ceremony in Munich (July 15,2005)
FhG Germany – Sendai city partnership
extension signing ceremony (July 13, 2010)
FhG Germany – Tohoku Univ. partnership
signing ceremony in Sendai (Nov. 8, 2011)
FhG Project center in WPI-AIMR,
Tohoku Univ. (2012)
Mayer of Sendai city Ms.E.Okuyama and
president of FhG Prof. H.-J.Buringer
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(IMEC M.Yoneyama 2012/6/12)
Signing ceremony (2012/6/11)
Hiroshi Kazui (Director,
Tohoku Univ.) and Luc
Van Den Hove (IMEC
president)
• One university from each region,
Japan, USA and Europe
• Promotion of international research exchange
• Exchange of researchers and students
Strategic Partner Tohoku U Stanford U EPFL
Tohoku U Stanford U
WPI-AIMR core members in IMEC (2012/6/21)
Pi’s Esashi, Ohno and Matsue
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Tohoku Univ. Micro System
Integration Center
・MEMS prototyping facility (20mm □)
・Micro/Nanomachining research and
education Center (MNC) (2 inch LSI)
・Hands on access fab. (4/6 inch)
MEMS Park Consortium (MEMSPC)
MEMS Core (4/6 inch line)
Advantest
components et.al.
Germany FhG
MEMS Industry Group in USA
Belgium IMEC
Industrial Tech.
Inst. Miyagi Pref.
MEMS PC
member
companies (80)
Local companies
Annex Esashi lab.
Sendai city
Sendai stealth dicing lab.
MEMS show room
Tsukuba
Innovation
Arena (TIA)
AIST Research Center for
Ubiquitous MEMS and Micro
(UMEMSME) (8 inch)
Nissan
motors,
Dainippon
Printing et.al. France LETI
Murata MFG
NICT
Crestec
Chiba Univ.
Funding program for
world-leading Innovative
R&D on Science and
Technology (FIRST) (2010-2013) ~5MUS$ / Year
Tokyo Univ. of
Agriculture and Tech.
Ricoh, Toyota motor, Pioneer, Nippon signal, Toppan technical design center, Kitagawa iron works, Sumitomo precision, NIDEC COPAL electronics, Nikko, Toyota central R&D labs, Nippon dempa kogyo, Japan aviation electronics industry, MEMS core, MEMSAS, Furukawa Electric, Denso
R&D Center of
Excellence for
Integrated
Microsystems
(2007-2016)
~5MUS$ / Year
Hamamatsu Photonics. et.al.
Italy Poly Tech. Torino USA U.C.Berkeley
Collaboration
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Basic
Company
In the past
University
Company University
At present
Company University
In future
Facility for prototyping Application
Government research institutes
Government research institutes
Government research institutes
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Efficient development for heterogeneous integration
(MEMS park consortium http://www.memspc.jp)
Free MEMS Seminar in Tokyo (Aug. 23-25, 2006) 280 attendees
Free MEMS Seminar in Sendai (Aug. 22-24, 2007) 75 attendees
Free MEMS Seminar in Fukuoka (Aug.20-22, 2008) 150 attendees
Free MEMS Seminar in Nagoya (Aug.4-6, 2009) 100 attendees
Free MEMS Seminar in Tsukuba (Aug.5-7, 2010) 211 attendees
Free MEMS Seminar in Kyoto (Aug.9-11, 2011) 175 attendees
Free MEMS Seminar in Tokyo (Aug.22-24, 2012) 226 attendees
High-tech. small volume production
Efficient utilization of facilities
Information from universities
MEMS seminar
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Assoc.Prof. Assis.Prof. Assis.Prof. Guest Prof. Assis.Prof.
S.Tanaka M.Muroyama S.Yoshida T.Gessner Y.C.Lin
(RF MEMS) (LSI design) (Piezo electric) (Packaging) (MEMS materials)
Acknowledgment to collaborators FhG ENAS Germany
Conclusions
1. Adhesive bonding for Wafer-Level Hetero Integration
(Filters, Piezoelectric switches, tactile sensor network,
massive parallel EB exposure system).
2. Wafer level packaging using LTCC with through-via
interconnection.
3. Open collaboration for MEMS on LSI.