integrated fabrication and modeling with coolspiceneil/sic_workshop/presentations_2016... ·...
TRANSCRIPT
![Page 1: Integrated Fabrication and Modeling with CoolSpiceneil/SiC_Workshop/Presentations_2016... · 2017-02-14 · 4. Circuit Design and ... Vdc=3 Vac= VS2 Enable=Y Vdc=5 Vac= Imeter1 GND](https://reader031.vdocuments.us/reader031/viewer/2022022605/5b78adbb7f8b9a534c8ba37c/html5/thumbnails/1.jpg)
Circuit Modeling and Fabrication Guided by CoolSPICE
Brendan CusackZ. Dilli, M. Gross, A. Akturk,N. Goldsman, J. McGarrity
Research supported by ARL and NASA
![Page 2: Integrated Fabrication and Modeling with CoolSpiceneil/SiC_Workshop/Presentations_2016... · 2017-02-14 · 4. Circuit Design and ... Vdc=3 Vac= VS2 Enable=Y Vdc=5 Vac= Imeter1 GND](https://reader031.vdocuments.us/reader031/viewer/2022022605/5b78adbb7f8b9a534c8ba37c/html5/thumbnails/2.jpg)
CoolSPICE Assisted Circuit Design and Fabrication
1. Device Simulation
2. Process Design/Device Fabrication
3. Device Characterization and Model Development
4. Circuit Design and Fabrication
5. Circuit Characterization
![Page 3: Integrated Fabrication and Modeling with CoolSpiceneil/SiC_Workshop/Presentations_2016... · 2017-02-14 · 4. Circuit Design and ... Vdc=3 Vac= VS2 Enable=Y Vdc=5 Vac= Imeter1 GND](https://reader031.vdocuments.us/reader031/viewer/2022022605/5b78adbb7f8b9a534c8ba37c/html5/thumbnails/3.jpg)
Step 1: Device Simulation of MOSFET using CoolSPICE
SD
G B
VS1Enable=YVdc=3Vac=
VS2Enable=Y
Vdc=5Vac= Imeter1
GND
• Initial simulation performed using device simulator integrated into CoolSPICE
• Use drift-diffusion model and Poisson Equation to determine:
• Potential• Electron/Hole concentration• Electron/Hole current density
• Determination of internal characteristics and terminal currents given Vg, Vs, Vd, Vb
• Device Simulation provides:• Epi-layer doping• Source/Drain/Body implant • Gate oxide thickness
![Page 4: Integrated Fabrication and Modeling with CoolSpiceneil/SiC_Workshop/Presentations_2016... · 2017-02-14 · 4. Circuit Design and ... Vdc=3 Vac= VS2 Enable=Y Vdc=5 Vac= Imeter1 GND](https://reader031.vdocuments.us/reader031/viewer/2022022605/5b78adbb7f8b9a534c8ba37c/html5/thumbnails/4.jpg)
Step 2: CoolCADMOSFET Fabrication
• Process Design Kit Developed
• Devices are fabricated using University of Maryland NanoFabcenter and in-house facilities
![Page 5: Integrated Fabrication and Modeling with CoolSpiceneil/SiC_Workshop/Presentations_2016... · 2017-02-14 · 4. Circuit Design and ... Vdc=3 Vac= VS2 Enable=Y Vdc=5 Vac= Imeter1 GND](https://reader031.vdocuments.us/reader031/viewer/2022022605/5b78adbb7f8b9a534c8ba37c/html5/thumbnails/5.jpg)
Step 2: Process Development & Optimization
Process Control– Implantation– Activation– Oxidation – POA– Contact Formation– Metallization
![Page 6: Integrated Fabrication and Modeling with CoolSpiceneil/SiC_Workshop/Presentations_2016... · 2017-02-14 · 4. Circuit Design and ... Vdc=3 Vac= VS2 Enable=Y Vdc=5 Vac= Imeter1 GND](https://reader031.vdocuments.us/reader031/viewer/2022022605/5b78adbb7f8b9a534c8ba37c/html5/thumbnails/6.jpg)
Step 3: Device Characterization and Model Development with CoolSPICE:
CoolCAD SiC MOS Process
TCAD Device SimulationExperimetal Data
CoolSpiceExperimetal Data
TCAD Simulation and Data CoolSPICE Model and Data
![Page 7: Integrated Fabrication and Modeling with CoolSpiceneil/SiC_Workshop/Presentations_2016... · 2017-02-14 · 4. Circuit Design and ... Vdc=3 Vac= VS2 Enable=Y Vdc=5 Vac= Imeter1 GND](https://reader031.vdocuments.us/reader031/viewer/2022022605/5b78adbb7f8b9a534c8ba37c/html5/thumbnails/7.jpg)
Step 4: Silicon Carbide OpAmp:Design and Simulation with CoolSpice
VSin1
Amplitude=0.1Frequency=1k
Transient Run Enable=YTime Step=0.01mEnd Time=10mStart Time=0Max Step=0.01m
SD
G BN1AuMOS_20nm
W=21uL=10u
SD
GBN2AuMOS_20nm
W=21uL=10u
SD
G BN3AuMOS_20nm
W=40uL=10u
R2Value=500k
VS1Enable=YVdc=5Vac=
VS3Enable=YVdc=2Vac=
GND
VS2Enable=YVdc=5.0Vac=
R3Value=100k
SD
G BN4AuMOS_20nm
W=40uL=10u
SD
G BN5AuMOS_20nm
W=40uL=10u
R4Value=200k
Vmeter3
.op=-9.23e-001
SD
G BN6AuMOS_20nm
W=40uL=10u
R5Value=150k
V
.op=1.27e
CV
R1Val
R6Val
![Page 8: Integrated Fabrication and Modeling with CoolSpiceneil/SiC_Workshop/Presentations_2016... · 2017-02-14 · 4. Circuit Design and ... Vdc=3 Vac= VS2 Enable=Y Vdc=5 Vac= Imeter1 GND](https://reader031.vdocuments.us/reader031/viewer/2022022605/5b78adbb7f8b9a534c8ba37c/html5/thumbnails/8.jpg)
Step 4: Circuit Simulation Results Input vs. Output
CoolSPICE graphical output of circuit design on previous slide
![Page 9: Integrated Fabrication and Modeling with CoolSpiceneil/SiC_Workshop/Presentations_2016... · 2017-02-14 · 4. Circuit Design and ... Vdc=3 Vac= VS2 Enable=Y Vdc=5 Vac= Imeter1 GND](https://reader031.vdocuments.us/reader031/viewer/2022022605/5b78adbb7f8b9a534c8ba37c/html5/thumbnails/9.jpg)
Step 5: CoolCAD Chip Design and Layout
Finalized Layout, Masks Development, Chip in Process (estimated completion in 2 months)
![Page 10: Integrated Fabrication and Modeling with CoolSpiceneil/SiC_Workshop/Presentations_2016... · 2017-02-14 · 4. Circuit Design and ... Vdc=3 Vac= VS2 Enable=Y Vdc=5 Vac= Imeter1 GND](https://reader031.vdocuments.us/reader031/viewer/2022022605/5b78adbb7f8b9a534c8ba37c/html5/thumbnails/10.jpg)
CoolSPICE: Make Your SiC Circuits “Great Again”
• CoolSPICE facilitates SiC circuit design and fabrication– PDK Development:
• DRC, LVS, SPICE Models– Identify key device parameters for:
• Process optimization• Circuit optimization
• Develop circuits for SiC power electronics– Gate Drivers– Power Converters
![Page 11: Integrated Fabrication and Modeling with CoolSpiceneil/SiC_Workshop/Presentations_2016... · 2017-02-14 · 4. Circuit Design and ... Vdc=3 Vac= VS2 Enable=Y Vdc=5 Vac= Imeter1 GND](https://reader031.vdocuments.us/reader031/viewer/2022022605/5b78adbb7f8b9a534c8ba37c/html5/thumbnails/11.jpg)
Thank you• CoolSpiceSim.com• CoolCADElectronics.com